CN203607418U - Composite fast-recovery diode - Google Patents
Composite fast-recovery diode Download PDFInfo
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- CN203607418U CN203607418U CN201320821263.XU CN201320821263U CN203607418U CN 203607418 U CN203607418 U CN 203607418U CN 201320821263 U CN201320821263 U CN 201320821263U CN 203607418 U CN203607418 U CN 203607418U
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- 238000011084 recovery Methods 0.000 title claims abstract description 30
- 239000002131 composite material Substances 0.000 title abstract 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 150000001875 compounds Chemical class 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 4
- 238000009825 accumulation Methods 0.000 abstract 1
- 238000007599 discharging Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 206010019133 Hangover Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
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Abstract
The utility model relates to a composite fast-recovery diode, and the diode comprises a metal cathode layer, an N+ lining layer, an N- epitaxial layer, a field oxide layer, and a metal anode layer, wherein the metal cathode layer, the N+ lining layer, the N- epitaxial layer, the field oxide layer and the metal anode layer are sequentially connected. The field oxide layer is provided with an active area window. A part, located at the active area window, of the N- epitaxial layer is provided with three or more P-type zones and schottky zones at intervals, wherein the schottky zones are connected with the P-type zones. Moreover, the interior of the N- epitaxial layer is also provided with charge accumulation zones which are located at the lower parts of the P-type zones. The metal cathode layer passes through the active area window and is connected with the P-type zones and the schottky zones. The diode provided by the utility model is good in consistency of forward voltage drop, is great in capability of snow slide tolerance, and is good in recovery characteristics.
Description
Technical field
The utility model relates to a kind of compound fast recovery diode, belongs to fast recovery diode technical field.
Background technology
Make at present the fast recovery diode with soft recovery characteristics, its active area is generally overall Schottky junction structure or PIN structure.
Simple Schottky diode is owing to being that how sub-device has the little and high conformity of on-state voltage drop, the very fast advantage of trr reverse recovery time, forces down (high energy is to 300V) but also exist breakdown potential, and high-temperature current leakage is large, avalanche capability UIS ability, the shortcoming such as anti-electrostatic discharging ESD ability is weak.
And that PIN diode has on-state voltage drop is little, puncture voltage is high, and avalanche capability UIS ability is good, and anti-electrostatic discharging ESD ability is strong, the high temperature little advantage of leaking electricity.But because this device is bipolar device, reverse recovery time is long, most of heavy metal doping techniques control minority carrier life time that adopts, causes its on-state voltage drop consistency poor, and all properties of flow is bad, when in parallel use, needs stepping, and failure rate is higher.
Moreover current PIN diode is without the structure of the electric charge accumulating region of N-type, in PIN junction diode reversely restoring process, charge carrier is extracted out from base fast, the the second snowslide electric field forming at N-N+ knot is very easily enhanced, and causes UIS ability to decline, and causes device reliability to decline.
Summary of the invention
The purpose of this utility model is to provide a kind of forward voltage drop high conformity, avalanche capability ability is high, recovery characteristics is good compound fast recovery diode.
The utility model is that the technical scheme achieving the above object is: a kind of compound fast recovery diode, is characterized in that: comprise the metallic cathode layer, the N that are connected successively
+substrate layer, N
-type epitaxial loayer and field oxide and metal anode layer, have active area window, N on field oxide
-type epitaxial loayer is positioned at window place, active area and is interval with the schottky region that three above Ji Yuge p type island regions, p type island region connect, and N
-in type epitaxial loayer, also tool is in the electric charge accumulating region of bottom, each p type island region, and metal anode layer is connected with p type island region and schottky region through active area window.
After the utility model adopts technique scheme, tool has the following advantages:
1, compound fast recovery diode of the present utility model combines PIN structure and Schottky junction structure, because schottky region is how sub-device, inject without few son, do not need minority carrier life time control technology, the forward voltage drop consistency of diode is improved greatly.Under large electric current, due to the conductivity modulation effect of P district to base in PIN, the on-state voltage drop of device reduces, while oppositely cut-off, PIN structure forms wider depletion region, schottky region is shielded, make puncture voltage be much higher than simple Schottky diode, and leakage current is far below simple Schottky diode, on-state voltage drop is between Schottky and PIN diode, and consistency is very good, can inherit the two-fold advantage of Schottky and PIN diode, overcome shortcoming separately, can obtain good electrology characteristic and reliability.
2, compound fast recovery diode of the present utility model adopts electric charge accumulating region, make device in the time oppositely recovering, the second snowslide electric field that NN+ knot forms is dragged down, the avalanche capability UIS of device is improved, can improve the original UIS ability of device 2～10 times, anti-electrostatic discharging ESD ability is strong, simultaneously due to elrectroneutrality pcharge-neutrality principle, electric charge accumulating region can attract hole charge to drift region, further reduces on-state voltage drop.
3, the utility model adopts electric charge accumulating region, and the few son of part injecting from P district under large current conditions is absorbed by electric charge accumulating region, reduces it to the drift region injected holes quantity of electric charge, has reduced recovery time; In the time of fast recovery, electric charge accumulating region provides few son of this part absorption in the hangover electric current of soft recovery, has kept soft recovery characteristics.
4, the utility model is at N
-the electric charge accumulating region that increases N-type in type epitaxial loayer, can further promote avalanche capability UIS ability, attracts hole charge to drift region, reduces conduction voltage drop, further improves the reliability of device.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, embodiment of the present utility model is described in further detail.
Fig. 1 is the structural representation of the compound fast recovery diode of the utility model.
Wherein: 1-field oxide, 2-active area window, 3-PXing district, 4-schottky region, 5-electric charge accumulating region, 6-metal anode layer, 7-N
-type epitaxial loayer, 8-N
+substrate layer, 9-metallic cathode layer.
Embodiment
As shown in Figure 1, compound fast recovery diode of the present utility model, comprises the metallic cathode layer 9, the N that are connected successively
+substrate layer 8, N
-type epitaxial loayer 7 and field oxide 1 and metal anode layer 6, have active area window 2 on field oxide 1, this N
-the thickness of type epitaxial loayer 7 is at 5～80 μ m, preferably N
-the thickness of type epitaxial loayer 7 is at 10～60 μ, as this N
-the thickness of type epitaxial loayer 7 is at 20 μ m, 30 μ m or 40 μ m etc., and N
-type epitaxial loayer 7 is positioned at active area window 2 places and is interval with three above p type island regions 3 and the schottky region 4 being connected with each p type island region 3, and the severity control of the novel p type island region 3 of this use is at 2～7 μ m, if this severity control is at 5 μ m.As shown in Figure 1, the utility model N
-in type epitaxial loayer 7, also tool is in the electric charge accumulating region 5 of 3 bottoms, each p type island region, and the distance between p type island region and electric charge accumulating layer district is 0～400
preferably the distance between p type island region and electric charge accumulating layer district is controlled at 100～300
as distance is controlled at 200 ± 50
metal anode layer 6 is connected with p type island region 3 and schottky region 4 through active area window 2.
Contrast and see the following form shown in 1 by the main performance of compound fast recovery diode of the present utility model and Schottky and PIN diode,
Table 1
Can find out that compound fast recovery diode of the present utility model obtains forward voltage drop high conformity, the good feature of high, the soft recovery characteristics of UIS ability.
Claims (6)
1. a compound fast recovery diode, is characterized in that: comprise the metallic cathode layer (9), the N that are connected successively
+substrate layer (8), N
-type epitaxial loayer (7) and field oxide and metal anode layer (6), have active area window (2), N on field oxide
-type epitaxial loayer (7) is positioned at active area window (2) and locates to be interval with three above p type island regions (3) and the schottky region (4) being connected with each p type island region (3), and N
-in type epitaxial loayer (7), also tool is in the electric charge accumulating region (5) of bottom, each p type island region (3), and metal anode layer (6) is connected with p type island region (3) and schottky region (4) through active area window (2).
2. compound fast recovery diode according to claim 1, is characterized in that: the distance between described p type island region and electric charge accumulating layer district is 0～400
3. compound fast recovery diode according to claim 2, is characterized in that: the distance between described p type island region and electric charge accumulating layer district is 100～300
4. compound fast recovery diode according to claim 1, is characterized in that: described N
-the thickness of type epitaxial loayer (7) is at 5～80 μ m.
5. compound fast recovery diode according to claim 4, is characterized in that: described N
-the thickness of type epitaxial loayer (7) is at 10～60 μ m.
6. compound fast recovery diode according to claim 1, is characterized in that: the severity control of described p type island region (3) is at 2～7 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320821263.XU CN203607418U (en) | 2013-12-12 | 2013-12-12 | Composite fast-recovery diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320821263.XU CN203607418U (en) | 2013-12-12 | 2013-12-12 | Composite fast-recovery diode |
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| Publication Number | Publication Date |
|---|---|
| CN203607418U true CN203607418U (en) | 2014-05-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320821263.XU Expired - Lifetime CN203607418U (en) | 2013-12-12 | 2013-12-12 | Composite fast-recovery diode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106206752A (en) * | 2015-02-18 | 2016-12-07 | 三垦电气株式会社 | Semiconductor device |
| CN106558623A (en) * | 2015-09-25 | 2017-04-05 | 比亚迪股份有限公司 | The manufacture method of fast recovery diode and fast recovery diode |
-
2013
- 2013-12-12 CN CN201320821263.XU patent/CN203607418U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106206752A (en) * | 2015-02-18 | 2016-12-07 | 三垦电气株式会社 | Semiconductor device |
| CN106206752B (en) * | 2015-02-18 | 2020-02-07 | 三垦电气株式会社 | Semiconductor device with a plurality of semiconductor chips |
| CN106558623A (en) * | 2015-09-25 | 2017-04-05 | 比亚迪股份有限公司 | The manufacture method of fast recovery diode and fast recovery diode |
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|---|---|---|---|
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| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140521 |
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| CX01 | Expiry of patent term |