CN104716038B - Compound fast recovery diode and preparation method thereof - Google Patents
Compound fast recovery diode and preparation method thereof Download PDFInfo
- Publication number
- CN104716038B CN104716038B CN201310684131.1A CN201310684131A CN104716038B CN 104716038 B CN104716038 B CN 104716038B CN 201310684131 A CN201310684131 A CN 201310684131A CN 104716038 B CN104716038 B CN 104716038B
- Authority
- CN
- China
- Prior art keywords
- type
- layer
- active area
- region
- knot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The present invention relates to a kind of preparation methods of compound fast recovery diode, (1), oxidation, photoetching active area, (2), N-type impurity ion implanting, (3), N knot, (4), injection window in the area P is formed, (5), p type impurity ion implanting, (6), knot；(7), schottky region is formed；(8), metal film deposition；(9), thinning back side；(10), compound fast recovery diode is made in back metal.The compound fast recovery diode of the present invention has the characteristics that forward voltage drop consistency is good, snow slide tolerance ability is high, recovery characteristics are good.
Description
Technical field
The present invention relates to a kind of compound fast recovery diodes and preparation method thereof, belong to fast recovery diode technical field.
Background technique
Production at present has a fast recovery diode of soft recovery characteristics, active area be generally whole Schottky junction structure or
PIN structural.
Simple Schottky diode is due to being that how sub- device be small with on-state voltage drop and consistency is good, reverse recovery time
Trr quickly the advantages of, but force down there is also breakdown potential and (300V can be arrived), high-temperature current leakage is big, avalanche capability UIS ability
The disadvantages of difference, anti-electrostatic discharging ESD ability is weak.
And PIN diode has on-state voltage drop small, breakdown voltage is high, and avalanche capability UIS ability is good, anti-electrostatic discharging ESD
Ability is strong, and high temperature leaks electricity small advantage.But since the device is bipolar device, reverse recovery time is long, most of using a huge sum of money
Belong to doping techniques and control minority carrier life time, cause its on-state voltage drop consistency poor, equal properties of flow is bad, needs to divide when used in parallel
Shelves, crash rate are higher.
Moreover the structure of electric charge accumulating region of the current PIN diode without N-type, PIN junction diode reverse recovery process
In, carrier is quickly extracted out from base area, is tied the second snowslide electric field to be formed in N-N+ and is easily enhanced, and cause UIS ability to decline,
Device reliability is caused to decline.
Summary of the invention
That the object of the present invention is to provide a kind of forward voltage drop consistency is good, snow slide tolerance ability is high, recovery characteristics are good answers
Close fast recovery diode and preparation method thereof.
The technical solution of the present invention in order to achieve the above objectives is: a kind of preparation method of compound fast recovery diode, special
Sign is:
(1), oxidation, photoetching active area: to epitaxial layer cleaning of silicon wafer processing after carry out oxidation processes, silicon wafer just
Face formed field oxide, then in front side of silicon wafer through photoetching, corrode active area window out；
(2), N-type impurity ion implanting: with ion implantation apparatus by N-type impurity ion implanting to active area, Implantation Energy are as follows:
100~500kev, implantation dosage 1E12~5E14cm-2；
(3), N knot: silicon wafer is put into high temperature dispersing furnace, knot is carried out to form the charge of N-type to N-type impurity ion
Accumulation area is passed through oxygen during knot, is formed in active areaOxide layer；
(4), injection window in the area P is formed: the p-type for exposing, corroding three or more out through photoresist in active area injects window
Mouthful；
(5), p type impurity ion implanting: P-type ion is injected into active area with ion implantation apparatus and forms three or more
P type island region, Implantation Energy are as follows: 30~180kev, implantation dosage 1E13~5E15cm-2；
(6), knot: silicon wafer is placed in high temperature dispersing furnace, carries out knot to p type island region and electric charge accumulating region, and photoetching is rotten
Lose the oxide layer in clean active area；
(7), schottky region is formed: with Ni and Pt or Mo or Pd sputtering or being evaporated in front side of silicon wafer formation transition metal
Film forms Schottky contacts after alloy and removing, forms schottky region between each p type island region；
(8), metal film deposition: again in front side of silicon wafer sputtering or evaporation or electroplating metal film, ohm is formed through photoetching, alloy
Contact；
(9), silicon chip back side thinning back side: is thinned to required thickness with wafer lapping machine or sandblasting；
(10), back metal: metal layer on back is made in silicon chip back side with evaporation or sputtering method, forms metallic cathode
Layer, is made compound fast recovery diode.
Wherein: the distance between described p type island region and electric charge accumulating layer area existThe N-type impurity ion exists
Junction depth control is at 2-8 μm during knot, and junction depth control is at 2-7 μm during the P-type ion knot.
Compound fast recovery diode of the invention, it is characterised in that: including being sequentially connected the metal cathode layer connect, N+Substrate
Layer, N-Type epitaxial layer and field oxide and metal anode layer have active area window, N on field oxide-Type epitaxial layer is located at
The schottky region for being equipped at intervals with three or more p type island regions at active area window and being connect with each p type island region, and N-In type epitaxial layer also
Tool passes through active area window and connect with p type island region and schottky region in the electric charge accumulating region for respectively having p type island region lower part, metal anode layer.
The present invention has the advantages that afterwards by adopting the above technical scheme
1, compound fast recovery diode of the invention combines PIN structural and Schottky junction structure, due to
Schottky region is how sub- device, without few son injection, does not need minority carrier controlled technique, makes the forward voltage drop consistency of diode
It greatly improves.Under high current, since the area P reduces the conductivity modulation effect of base area, the on-state voltage drop of device in PIN, reversely
When cut-off, PIN junction is configured to broader depletion region, and schottky region is shielded, and breakdown voltage is made to be much higher than simple Schottky two
Pole pipe, on-state voltage drop is between Schottky and PIN diode, and consistency is very good, can inherit bis- pole of Schottky and PIN
The two-fold advantage of pipe overcomes respective disadvantage, can obtain good electrology characteristic and reliability.
2, compound fast recovery diode of the invention uses electric charge accumulating region, so that device, in Reverse recovery, NN+ ties shape
At the second snowslide electric field be pulled low so that the avalanche capability UIS of device is improved, the 2 of the original UIS ability of device can be improved
~10 times, anti-anti-electrostatic discharging ESD ability is strong, simultaneously because elrectroneutrality pcharge-neutrality principle, electric charge accumulating region can attract hole charge to drift
Area is moved, on-state voltage drop is further decreased.
3, the present invention uses electric charge accumulating region, and the few son in the part injected in high current from the area P is by electric charge accumulating region
It absorbs, reduces it to the drift region injected holes quantity of electric charge, reduce recovery time；In fast restore, electric charge accumulating region by this
The tail currents of the few sub- soft recovery of offer partially absorbed, maintain soft recovery characteristics.
4, the present invention is in N-The electric charge accumulating region for increasing N-type in type epitaxial layer, can further promote avalanche capability UIS energy
Power attracts hole charge to drift region, reduces conduction voltage drop, further increase the reliability of device.
5, the present invention is without increasing new equipment, only obtains new construction by technique adjustment, acquisition forward voltage drop consistency is good,
The fast recovery diode that UIS ability is high, soft recovery characteristics are good, is convenient for industrialized production.
Detailed description of the invention
The embodiment of the present invention is described in further detail with reference to the accompanying drawing.
Fig. 1 is the structural schematic diagram of the compound fast recovery diode of the present invention.
Wherein: 1-field oxide, 2-active area windows, 3-p type island regions, 4-schottky regions, 5-electric charge accumulating regions, 6-
Metal anode layer, 7-N-Type epitaxial layer, 8-substrate layers, 9-metal cathode layers.
Specific embodiment
As shown in Figure 1, the preparation method of compound fast recovery diode of the invention,
(1), oxidation, photoetching active area: to epitaxial layer cleaning of silicon wafer processing after carry out oxidation processes, silicon wafer just
Face formed field oxide, then in front side of silicon wafer through photoetching, corrode active area window out, the silicon wafer be N+ type silicon substrate.
(2), N-type impurity ion implanting: with ion implantation apparatus by N-type impurity ion implanting to active area, Implantation Energy are as follows:
100~500kev, implantation dosage 1E12~5E14cm-2。
(3), N knot: silicon wafer is put into high temperature dispersing furnace, knot is carried out to form charge accumulated to N-type impurity ion
Area, the N-type impurity ion concentration of electric charge accumulating region are higher than the N-type impurity ion concentration of epitaxial layer, the N-type impurity ion of epitaxial layer
Knot during junction depth control at 2~8 μm, the present invention is passed through oxygen during knot, is formed in active areaOxide layer, as the thickness of the oxide layer existsSuch as existOr
(4), injection window in the area P is formed: the p-type for exposing, corroding three or more out through photoresist in active area injects window
Mouthful.
(5), p type impurity ion implanting: P-type ion is injected into active area with ion implantation apparatus and forms three or more
P type island region, Implantation Energy are as follows: 30~180kev, implantation dosage 1E13~5E15cm-2。
(6), knot: silicon wafer is placed in high temperature dispersing furnace, carries out knot to p type island region and electric charge accumulating region, P-type ion pushes away
Junction depth control makes the distance between p type island region and electric charge accumulating layer area exist at 2~7 μm during knotBest p type island region
The control of the distance between electric charge accumulating layer area existsAs distance controlling existsAnd photoetching corrosion is clean
Oxide layer in active area.
(7), schottky region is formed: with Ni and Pt or Mo or Pd sputtering or being evaporated in front side of silicon wafer formation transition metal
Film forms Schottky contacts after alloy and after removing, forms schottky region between each p type island region.
(8), metal film deposition: again in front side of silicon wafer sputtering or evaporation or electroplating metal film, ohm is formed through photoetching, alloy
Contact.
(9), thinning back side: being thinned to required thickness for silicon chip back side with wafer lapping machine or sandblasting, can be by wafer thinning to 150
~400 μm.
(10), back metal: metal layer on back is made in silicon chip back side with evaporation or sputtering method, forms metallic cathode
Layer, is made compound fast recovery diode.
As shown in Figure 1, compound fast recovery diode of the invention, including being sequentially connected the metal cathode layer 9, the N that connect+Substrate
Layer 8, N-Type epitaxial layer 7 and field oxide 1 and metal anode layer 6 have active area window 2, the N on field oxide 1-Outside type
Prolong the thickness of layer 7 at 5~80 μm, best N-The thickness of type epitaxial layer 7 is at 10~60 μm, such as the N-The thickness of type epitaxial layer 7 is 30
μm, 40 μm or 50 μm etc., N-Type epitaxial layer 7 be located at be equipped at intervals at active area window 2 three or more p type island region 3 and with each p-type
The schottky region 4 that area 3 connects can control the junction depth of p type island region 3 at 2~7 μm, as the junction depth is controlled at 5 μm.And N-Type extension
Also tool makes the distance between p type island region and electric charge accumulating layer area exist in the electric charge accumulating region 5 for respectively having 3 lower part of p type island region in layer 7The distance between p type island region and electric charge accumulating layer area can controlMetal anode layer 6 passes through active
Area's window 2 is connect with p type island region 3 and schottky region 4.
The compound fast recovery diode made from the method for the present invention is shown in the comparison of the main performance of Schottky and PIN diode
Shown in the compound fast recovery diode of the following table 1,
Table 1
It can be seen that the compound fast recovery diode of the present invention obtains, forward voltage drop consistency is good, UIS ability is high, soft recovery is special
The good feature of property.
Claims (4)
1. a kind of preparation method of compound fast recovery diode, it is characterised in that:
(1), oxidation, photoetching active area: to oxidation processes are carried out after the cleaning of silicon wafer processing with epitaxial layer, in front side of silicon wafer shape
At field oxide, then in front side of silicon wafer through photoetching, corrode active area window out, the thickness of the epitaxial layer is at 5~80 μm；
(2), N-type impurity ion implanting: with ion implantation apparatus by N-type impurity ion implanting to active area, Implantation Energy are as follows: 100
~500kev, implantation dosage 1E12~5E14cm-2；
(3), N knot: silicon wafer is put into high temperature dispersing furnace, knot is carried out to form the charge accumulated of N-type to N-type impurity ion
Area is passed through oxygen during knot, is formed in active areaOxide layer, the N-type impurity ion exists
Junction depth control is at 2~8 μm during knot；
(4), injection window in the area P is formed: the p-type for exposing, corroding three or more out through photoresist in active area injects window；
(5), p type impurity ion implanting: P-type ion is injected into active area with ion implantation apparatus and forms three or more p-types
Area, Implantation Energy are as follows: 30~180kev, implantation dosage 1E13~5E15cm-2；
(6), knot: silicon wafer is placed in high temperature dispersing furnace, carries out knot to p type island region and electric charge accumulating region, and photoetching corrosion is dry
Oxide layer in net active area, junction depth control is at 2~7 μm during the P-type ion knot, p type island region and electric charge accumulating layer area
The distance between
(7), schottky region is formed: with Ni and Pt or Mo or Pd sputtering or evaporate in front side of silicon wafer formation transition metal films,
Schottky contacts are formed after alloy and removing, form schottky region between each p type island region；
(8), it metal film deposition: again in front side of silicon wafer sputtering or evaporation or electroplating metal film, forms ohm through photoetching, alloy and connects
Touching；
(9), silicon chip back side thinning back side: is thinned to required thickness with wafer lapping machine or sandblasting；
(10), back metal: metal layer on back is made in silicon chip back side with evaporation or sputtering method, forms metal cathode layer, system
Obtain compound fast recovery diode.
2. the preparation method of compound fast recovery diode according to claim 1, it is characterised in that: the p type island region with
The distance between electric charge accumulating layer area exists
3. the compound fast recovery diode of the preparation method production of compound fast recovery diode according to claim 1, special
Sign is: including being sequentially connected the metal cathode layer connect, N+Substrate layer, N-Type epitaxial layer and field oxide and metal anode layer,
There is active area window, N on field oxide-Type epitaxial layer be located at be equipped at intervals at active area window three or more p type island region and
The schottky region being connect with each p type island region, and N-In type epitaxial layer also have each p type island region lower part electric charge accumulating region, the p-type from
At 2~7 μm, the distance between p type island region and electric charge accumulating layer area exist for junction depth control during sub- knot Charge accumulated
At 2~8 μm, metal anode layer passes through active area window and connect with p type island region and schottky region the control of area's junction depth.
4. the compound fast recovery diode of the preparation method production of compound fast recovery diode according to claim 3, special
Sign is: the N-The thickness of type epitaxial layer is at 5~80 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310684131.1A CN104716038B (en) | 2013-12-12 | 2013-12-12 | Compound fast recovery diode and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310684131.1A CN104716038B (en) | 2013-12-12 | 2013-12-12 | Compound fast recovery diode and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104716038A CN104716038A (en) | 2015-06-17 |
| CN104716038B true CN104716038B (en) | 2018-12-21 |
Family
ID=53415247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310684131.1A Active CN104716038B (en) | 2013-12-12 | 2013-12-12 | Compound fast recovery diode and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104716038B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105931952B (en) * | 2016-05-17 | 2019-06-11 | 华润微电子（重庆）有限公司 | A kind of manufacturing method of avalanche diode structure |
| CN107452621B (en) * | 2016-05-31 | 2021-07-20 | 无锡华润微电子有限公司 | Fast recovery diode and manufacturing method thereof |
| CN107946373A (en) * | 2016-10-12 | 2018-04-20 | 重庆中科渝芯电子有限公司 | A kind of shallow embedding floor height pressure Schottky rectifier and its manufacture method |
| CN109148605B (en) * | 2017-06-19 | 2022-02-18 | 比亚迪半导体股份有限公司 | Fast recovery diode, preparation method and electronic equipment |
| CN110518013B (en) * | 2019-08-07 | 2021-08-10 | 黄山芯微电子股份有限公司 | Composite diode structure with recovery characteristic and manufacturing method thereof |
| CN112652534A (en) * | 2020-12-22 | 2021-04-13 | 深圳市美浦森半导体有限公司 | Preparation method of low-voltage fast recovery diode and diode |
| CN112786708B (en) * | 2021-03-04 | 2022-03-08 | 深圳吉华微特电子有限公司 | Ultra-low VF soft fast recovery diode |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3891479A (en) * | 1971-10-19 | 1975-06-24 | Motorola Inc | Method of making a high current Schottky barrier device |
| US20010017393A1 (en) * | 1997-06-02 | 2001-08-30 | Fuji Electric Co., Ltd | Diode and method for manufacturing the same |
| US20090224284A1 (en) * | 2008-02-08 | 2009-09-10 | Fuji Electric Device Technology Co., Ltd. | Semiconductor device and method of producing the same |
| CN201741702U (en) * | 2010-07-01 | 2011-02-09 | 江阴新顺微电子有限公司 | Schottky diode with gird protection structure |
-
2013
- 2013-12-12 CN CN201310684131.1A patent/CN104716038B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3891479A (en) * | 1971-10-19 | 1975-06-24 | Motorola Inc | Method of making a high current Schottky barrier device |
| US20010017393A1 (en) * | 1997-06-02 | 2001-08-30 | Fuji Electric Co., Ltd | Diode and method for manufacturing the same |
| US20090224284A1 (en) * | 2008-02-08 | 2009-09-10 | Fuji Electric Device Technology Co., Ltd. | Semiconductor device and method of producing the same |
| CN201741702U (en) * | 2010-07-01 | 2011-02-09 | 江阴新顺微电子有限公司 | Schottky diode with gird protection structure |
Non-Patent Citations (1)
| Title |
|---|
| "10A/300V、400V JBS二极管的设计和制备";王一帆;《中国优秀硕士学位论文全文库信息科技辑》;20121231(第10期);论文正文第31页第1段-第33页倒数第1段、附图1.8 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104716038A (en) | 2015-06-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104716038B (en) | Compound fast recovery diode and preparation method thereof | |
| US10050134B2 (en) | Methods for fabricating anode shorted field stop insulated gate bipolar transistor | |
| CN106128946B (en) | The manufacturing method of semiconductor device and semiconductor device | |
| CN102569067B (en) | Method for manufacturing planar high-voltage ultrafast soft recovery diode | |
| TW201208039A (en) | Semiconductor device | |
| CN102544114B (en) | Accumulation type grooved-gate diode | |
| CN105679816B (en) | A kind of trench gate charge storage type IGBT and its manufacturing method | |
| CN103872144B (en) | A kind of soft fast recovery diode and manufacture method thereof | |
| CN101540343A (en) | 4H-SiC PiN /schottky diode of offset field plate structure and manufacturing method of 4H-SiC PiN /schottky diode | |
| CN103959479B (en) | High-voltage trench junction barrier Schottky diode | |
| CN101540283A (en) | Method for manufacturing 4H-SiC PiN/schottky diode of field limiting ring structure | |
| CN105810754B (en) | A kind of metal-oxide-semiconductor diode with accumulation layer | |
| CN102820225A (en) | Manufacturing method for high-pressure quick soft recovery diode with diffusing buffer layer | |
| CN105826399A (en) | Soft fast recovery diode of multi-mixture structure and preparation method thereof | |
| Lynch et al. | Design considerations for high voltage SiC power devices: An experimental investigation into channel pinching of 10kV SiC junction barrier schottky (JBS) diodes | |
| CN106129110A (en) | A kind of dual pathways RC IGBT device and preparation method thereof | |
| CN107305909A (en) | A kind of inverse conductivity type IGBT back structure and preparation method thereof | |
| CN105226104B (en) | A kind of SiC schottky diode and preparation method thereof | |
| CN102522136A (en) | Epitaxial silicon-based PIN node micro isotope battery and preparation method thereof | |
| CN105762198B (en) | Plough groove type fast recovery diode and preparation method thereof | |
| CN105590965B (en) | A kind of adjustable planar metal oxide semiconductor diode of cut-in voltage | |
| CN110896098B (en) | Reverse switch transistor based on silicon carbide base and preparation method thereof | |
| CN106098799A (en) | A kind of accumulation type trench diode | |
| US20230047794A1 (en) | Multi-trench Super-Junction IGBT Device | |
| CN101789400A (en) | Semiconductor rectifying device and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |