CN204130552U - A kind of point-contact diode - Google Patents
A kind of point-contact diode Download PDFInfo
- Publication number
- CN204130552U CN204130552U CN201420574470.4U CN201420574470U CN204130552U CN 204130552 U CN204130552 U CN 204130552U CN 201420574470 U CN201420574470 U CN 201420574470U CN 204130552 U CN204130552 U CN 204130552U
- Authority
- CN
- China
- Prior art keywords
- junction
- wafer
- point
- diode
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
Abstract
The utility model relates to a kind of point-contact diode, comprise square shell, described square shell two ends are respectively arranged with anode tap, cathode leg, described anode tap is provided with support, described rack upper surface is provided with PN junction, described PN junction is fixed with wafer, and described wafer is connected with cathode leg by touching silk.The utility model structure is simple, easily encapsulation, cheap for manufacturing cost, the rectified current carried, repercussion voltage are comparatively large, not easily breakdown.
Description
Technical field
The utility model relates to a kind of semiconductor device, particularly relates to a kind of point-contact diode.
Background technology
Diode, also known as crystal diode, is called for short diode (diode), in addition, also has early stage vacuum electronic diode; It is a kind of electronic device with unidirectional conduction current.Have a PN junction two lead terminals in semiconductor diode inside, this electronic device, according to the direction of applied voltage, possesses the transduction of unidirectional current.In general, crystal diode is one and sinters by p-type semiconductor and n-type semiconductor the p-n junction interface formed.Form space charge layer in the both sides at its interface, form built-in field.When applied voltage equals zero, to cause dissufion current equal with the drift current that caused by built-in field and be in electric equilibrium state for the concentration difference due to p-n junction both sides charge carrier, and this is also the diode characteristic under normality.
At present, diode manufacturing technology is quite ripe, but still there is complex structure, cost is high, encapsulation is difficult, the easy problem such as breakdown.
Utility model content
Technical problem to be solved in the utility model is to provide that a kind of structure is simple, easily encapsulation, cheap for manufacturing cost, the rectified current carried, repercussion voltage are comparatively large, not easily breakdown point-contact diode.
The technical scheme that the utility model solves the problems of the technologies described above is as follows: a kind of point-contact diode, comprise square shell, described square shell two ends are respectively arranged with anode tap, cathode leg, described anode tap is provided with support, described rack upper surface is provided with PN junction, described PN junction is fixed with wafer, and described wafer is connected with cathode leg by touching silk.
Semiconductor diode is one and sinters by p-type semiconductor and n-type semiconductor the PN junction interface formed.Form space charge layer in the both sides at its interface, form built-in field.When applied voltage equals zero, to cause dissufion current equal with the drift current that caused by built-in field and be in electric equilibrium state for concentration difference due to PN junction both sides charge carrier, described support and PN junction conducting are used for the transmission of charge carrier, and described tactile silk is used for the conducting between wafer and cathode leg.
On the basis of technique scheme, the utility model can also do following improvement.
Further, described square shell is metal shell, the as easy as rolling off a log impact being subject to ambient temperature, humidity, interference signal of described diode PN junction built-in field, and described metal shell can effectively shield external interference signal, and other influences factor, ensure the normal work of diode.
Further, described anode tap, cathode leg are filamentary silver lead-in wire, and described filamentary silver lead resistance is little, good conductivity, is conducive to the transmission of charge carrier, thus increase rectified current.
Further, described wafer is silicon wafer, and described silicon wafer changes its conductivity by doping, controls the rectified current size of diode with this.
Further, described wafer and PN junction ohmic contact, for the foundation of built-in field, and the cut-off of reverse voltage.
The beneficial effects of the utility model are: structure is simple, easily encapsulation, cheap for manufacturing cost, and the rectified current carried, repercussion voltage are comparatively large, not easily breakdown.
Accompanying drawing explanation
Fig. 1 is a kind of point-contact diode structural representation of the utility model;
In accompanying drawing, the list of parts representated by each label is as follows: 1, cathode leg, and 2, square shell, 3, wafer, 4, PN junction, 5, support, 6 anode taps, 7, touch silk.
Embodiment
Be described principle of the present utility model and feature below in conjunction with accompanying drawing, example, only for explaining the utility model, is not intended to limit scope of the present utility model.
As shown in Figure 1, a kind of point-contact diode, comprise square shell 2, described square shell 2 two ends are respectively arranged with anode tap 6, cathode leg 1, described anode tap 6 is provided with support 5, described support 5 upper surface is provided with PN junction 4, and described PN junction 4 is fixed with wafer 3, and described wafer 3 is connected with cathode leg 1 by touching silk 7.
Semiconductor diode is one and sinters by p-type semiconductor and n-type semiconductor PN junction 4 interface formed.Form space charge layer in the both sides at its interface, form built-in field.When applied voltage equals zero, to cause dissufion current equal with the drift current that caused by built-in field and be in electric equilibrium state for concentration difference due to PN junction 4 both sides charge carrier, described support and PN junction 4 conducting are used for the transmission of charge carrier, and described tactile silk 7 is for the conducting between wafer 3 and cathode leg 1.
Described square shell 2 is metal shell, the as easy as rolling off a log impact being subject to ambient temperature, humidity, interference signal of described diode PN junction 4 built-in field, described metal shell 1 can effectively shield external interference signal, and other influences factor, ensures the normal work of diode; Described anode tap 6, cathode leg 1 are filamentary silver lead-in wire, and described filamentary silver lead resistance is little, good conductivity, is conducive to the transmission of charge carrier, thus increases rectified current; Described wafer 3 is silicon wafer, and described silicon wafer changes its conductivity by doping, controls the rectified current size of diode with this; Described wafer 3 and PN junction 4 ohmic contact, for the foundation of built-in field, and the cut-off of reverse voltage.
The foregoing is only preferred embodiment of the present utility model, not in order to limit the utility model, all within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.
Claims (5)
1. a point-contact diode, it is characterized in that, comprise square shell, described square shell two ends are respectively arranged with anode tap, cathode leg, described anode tap is provided with support, described rack upper surface is provided with PN junction, and described PN junction is fixed with wafer, and described wafer is connected with cathode leg by touching silk.
2. a kind of point-contact diode according to claim 1, it is characterized in that, described square shell is metal shell.
3. a kind of point-contact diode according to claim 1, is characterized in that, described anode tap, cathode leg are filamentary silver lead-in wire.
4. a kind of point-contact diode according to claim 1, it is characterized in that, described wafer is silicon wafer.
5. a kind of point-contact diode according to claim 1, is characterized in that, described wafer and PN junction ohmic contact.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420574470.4U CN204130552U (en) | 2014-09-30 | 2014-09-30 | A kind of point-contact diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420574470.4U CN204130552U (en) | 2014-09-30 | 2014-09-30 | A kind of point-contact diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204130552U true CN204130552U (en) | 2015-01-28 |
Family
ID=52386877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420574470.4U Expired - Fee Related CN204130552U (en) | 2014-09-30 | 2014-09-30 | A kind of point-contact diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204130552U (en) |
-
2014
- 2014-09-30 CN CN201420574470.4U patent/CN204130552U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150128 Termination date: 20150930 |
|
| EXPY | Termination of patent right or utility model |