CN104362198A - Transparent electrode grid-control transverse PIN blue and purple photo-detector and method for manufacturing same - Google Patents
Transparent electrode grid-control transverse PIN blue and purple photo-detector and method for manufacturing same Download PDFInfo
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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Abstract
The invention discloses a transparent electrode grid-control transverse PIN blue and purple photo-detector and a method for manufacturing the same. The photo-detector comprises a P (positive)-type substrate. N (negative) wells and a deep N well are isolated from one another to form a reversed P well in the P-type substrate, an N<+> zone and a P<+> zone are arranged in the reversed P well, a grid oxide layer, a transparent conducting thin film and a grid electrode G sequentially cover the surface, which is positioned between the N<+> zone and the P<+> zone, of the reversed P well, an anode A is arranged on the N<+> zone, and a cathode K is arranged on the P<+> zone. The method for manufacturing the transparent electrode grid-control transverse PIN blue and purple photo-detector includes isolating the N wells and the deep N well from one another to form the reversed P well on the P-type substrate; forming the N<+> zone and the P<+> zone on two sides of the reversed P well and respectively forming the anode A and the cathode K; sequentially manufacturing the grid oxide layer, the transparent conducting thin film and the grid electrode G on the upper surface of the reversed P well. The transparent electrode grid-control transverse PIN blue and purple photo-detector and the method have the advantages that the problem of conflict between the quantum efficiency and frequency response of existing photo-detectors can be effectively solved, and the transparent electrode grid-control transverse PIN blue and purple photo-detector is low in dark current, high in quantum efficiency, rapid in frequency response, big in input impedance and favorable for integration.
Description
Technical field
The present invention relates to royal purple optical detector technology field, be specifically related to a kind of transparency electrode grid-control horizontal PIN royal purple photo-detector and preparation method thereof.
Background technology
Photo-detector (Photo-detector, PD), as light signal reading device, plays a part very crucial in photonics.Royal purple photo-detector is widely used in fields such as blue-ray storage, health care, environmental monitorings.Along with the development of CMOS technology technology, with the high-performance of CMOS technology compatibility, a current study hotspot can be become by the integrated royal purple photo-detector of photoelectricity.Royal purple photo-detector prepared by CMOS technology is normally based on the bipolar structure that longitudinal P N ties, and mutually restrict between quantum efficiency and frequency response, input impedance is little, is unfavorable for integrated.In addition, the dark current that P type substrate leakage current causes is large, and sensitivity is low.Moreover along with the development of CMOS technology, by scaled down principle, device size (p-n junction is dark, depletion region thickness) and operating voltage must corresponding reductions.Thus be difficult to effective absorption to long wavelength light, the quantum efficiency of photo-detector is very low, and response speed is restricted.But according to Lambert law, the absorption length of short-wavelength light in silicon is shorter, and the silicon film thickness of requirement is less.Therefore, CMOS technology is adopted to be expected to the royal purple photo-detector preparing excellent properties.How to realize based on CMOS technology realize excellent performance, can the integrated royal purple photo-detector of photoelectricity, become a key technical problem urgently to be resolved hurrily.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of contradiction that can effectively solve between quantum efficiency and frequency response, and dark current is little, quantum efficiency is large, frequency response is fast, input impedance is large, be conducive to integrated transparency electrode grid-control horizontal PIN royal purple photo-detector and preparation method thereof.
For solving the problems of the technologies described above, the technical solution used in the present invention is:
A kind of transparency electrode grid-control horizontal PIN royal purple photo-detector, comprise P type substrate, the N trap and dark N trap that adopt ion implantation doping mode to be formed is provided with in described P type substrate, the bottom of described N trap contacts with dark N trap and forms anti-P trap in the upper isolation of P type substrate, and the both sides of described anti-P trap are provided with the N adopting diffusing, doping mode to form lateral clearance layout
+district and P
+district, described anti-P trap is positioned at N
+district and P
+between district, the surface coverage in region has gate oxide, and the surface coverage of described gate oxide has transparent conductive film, and described transparent conductive film is provided with gate electrode G, described N
+district is provided with anode electrode A, described P
+district is provided with cathode electrode K.
Preferably, described transparent conductive film is the one in ito thin film, AZO film, Graphene.
Preferably, described P type substrate adopts low-doped p-type silicon to make.
Preferably, described P type substrate is provided with P type substrate P
+district, described P type substrate P
+the surface in district is provided with P type substrate electrode.
Preferably, the thickness of described anti-P trap is 80nm ~ 800nm.
Preferably, described gate oxide is the silicon dioxide layer adopting lift-off technology to generate.
Preferably, the thickness of described silicon dioxide layer is 10nm ~ 50nm.
Preferably, the thickness of described transparent conductive film is 80nm ~ 100nm.
Preferably, described anode electrode A, cathode electrode K, gate electrode G, P type substrate electrode are the aluminium lamination adopting aluminum plating process to make.
The present invention also provides the preparation method of a kind of transparency electrode grid-control horizontal PIN royal purple photo-detector, comprises the steps:
1) using low-doped p-type silicon as P type substrate, adopt ion implantation doping mode in described P type substrate, form N trap and dark N trap, the bottom of described N trap contacts with dark N trap and forms anti-P trap in the upper isolation of P type substrate;
2) adopt diffusing, doping mode to form the N of lateral clearance layout respectively in the both sides of described anti-P trap
+district and P
+district, at described N
+the aluminium lamination that the surface in district adopts aluminum plating process to make as anode electrode A, at described P
+the aluminium lamination that the surface in district adopts aluminum plating process to make is as cathode electrode K; In described P type substrate, adopt diffusing, doping mode to form P type substrate P
+district, and at described P type substrate P
+aluminize in district and generate P type substrate electrode;
3) N is positioned at described anti-P trap
+district and P
+between district, the surface coverage in region adopts lift-off technology to generate silicon dioxide layer as gate oxide;
4) at the superficial growth transparent conductive film of described gate oxide, aluminize on the surface of described transparent conductive film and generate gate electrode G.
Transparency electrode grid-control of the present invention horizontal PIN royal purple photo-detector has following advantage:
1, the present invention is provided with the N trap and dark N trap that adopt ion implantation doping mode to be formed in P type substrate, the bottom of N trap contacts with dark N trap and forms anti-P trap in the upper isolation of P type substrate, and the both sides of anti-P trap are provided with the N adopting diffusing, doping mode to form lateral clearance layout
+district and P
+district, because anti-P trap (R-WELL) and P type substrate are isolated by N trap (NWELL) and dark N trap (Deep NWELL), P type substrate leakage current can reach the pA order of magnitude, thus greatly reduces dark current, has the advantage that dark current is little.
2, the present invention is provided with the N adopting diffusing, doping mode to form lateral clearance layout in the both sides of anti-P trap
+district and P
+district, the N that lateral clearance is arranged
+district and P
+district forms horizontal PIN structural, and horizontal PIN structural can not increase output capacitance while increase light-receiving area, thus effectively can solve the contradiction between quantum efficiency and frequency response, has the advantage that quantum efficiency is large, frequency response is fast.
3, the present invention is positioned at N at anti-P trap
+district and P
+between district, the surface coverage in region has gate oxide, and the surface coverage of described gate oxide has transparent conductive film, and transparent conductive film is provided with gate electrode G, described N
+district is provided with anode electrode A, described P
+district is provided with cathode electrode K, realizes transparency electrode by transparent conductive film, gate electrode G, and the anti-P trap (R-WELL) of transparency electrode grid-control exhausts and not transoid, at same voltage V
aKunder effect, the having lateral depletion district of larger width can be formed, increase effective photoelectric conversion region, reduce the transit time of photo-generated carrier, thus eliminate channel length restriction, the quantum efficiency of further raising device and frequency response, can obtain quantum efficiency >70% simultaneously, cut-off frequency >1GHz.
4, the present invention is positioned at N at anti-P trap
+district and P
+between district, the surface coverage in region has gate oxide, the surface coverage of described gate oxide has transparent conductive film, transparent conductive film is provided with gate electrode G, forms vertical MOS structure by P type substrate, gate oxide, transparent conductive film, gate electrode G, input impedance large (10
7~ 10
15Ω), relative to the input impedance (forward: hundreds of Europe is to several kilo-ohms, reverse: tens kilo-ohms to hundreds of kilo-ohm) of bipolar structure, be more conducive to integrated.
The preparation method of transparency electrode grid-control of the present invention horizontal PIN royal purple photo-detector is for the preparation of transparency electrode grid-control of the present invention horizontal PIN royal purple photo-detector, existing standard CMOS process can be utilized to prepare transparency electrode grid-control of the present invention horizontal PIN royal purple photo-detector, have technique simple, implement to be easy to advantage.
Accompanying drawing explanation
Fig. 1 is the sectional structure schematic diagram of embodiment of the present invention device.
Fig. 2 is embodiment of the present invention method step 1) obtain the sectional structure schematic diagram of intermediate products.
Fig. 3 is embodiment of the present invention method step 2) obtain the sectional structure schematic diagram of intermediate products.
Fig. 4 is embodiment of the present invention method step 3) obtain the sectional structure schematic diagram of intermediate products.
Marginal data: 1, P type substrate; 11, P type substrate P
+district; 12, P type substrate electrode; 2, N trap; 3, dark N trap; 4, anti-P trap; 41, gate oxide; 42, transparent conductive film; 5, N
+district; 6, P
+district.
Embodiment
As shown in Figure 1, the transparency electrode grid-control horizontal PIN royal purple photo-detector of the present embodiment comprises P type substrate 1, the N trap 2 and dark N trap 3 that adopt ion implantation doping mode to be formed is provided with in P type substrate 1, the bottom of N trap 2 contacts with dark N trap 3 and forms anti-P trap 4 in the upper isolation of P type substrate 1, and the both sides of anti-P trap 4 are provided with the N adopting diffusing, doping mode to form lateral clearance layout
+district 5 and P
+district 6(N
+district 5 and P
+the horizontal spacing in district 6 is determined by required light-receiving area), anti-P trap 4 is positioned at N
+district 5 and P
+between district 6, the surface coverage in region has gate oxide 41, and the surface coverage of gate oxide 41 has transparent conductive film 42, and transparent conductive film 42 is provided with gate electrode G, N
+district 5 is provided with anode electrode A, P
+district 6 is provided with cathode electrode K.
In the present embodiment, transparent conductive film 42 is ito thin film (indium tin oxide films), can reduce the absorption of gate electrode to incident light, improves external quantum efficiency; In addition AZO film (zinc-oxide film of aluminium doping), Graphene can also be adopted as required.
In the present embodiment, the thickness range of transparent conductive film 42 is 80nm ~ 100nm, based on above-mentioned thickness range, can realize compromising well between film transmission and resistivity.
In the present embodiment, P type substrate 1 adopts low-doped p-type silicon to make, and other circuit that can realize with CMOS technology are integrated, and reduce the recombination rate of photo-generated carrier, improves internal quantum efficiency.
In the present embodiment, P type substrate 1 is provided with P type substrate P
+district 11, P type substrate P
+the surface in district 11 is provided with P type substrate electrode 12.
In the present embodiment, the thickness of anti-P trap 4 is 80nm ~ 800nm.The present embodiment is according to Lambert law, in conjunction with CMOS technology feature, and ensure anti-P trap surface depletion and non-transoid time, whole anti-P trap longitudinally exhausts, the thickness determining anti-P trap (R-WELL) 4 is 80nm ~ 800nm, and can realize is the detection of 380 ~ 520 nm royal purple light to wavelength.
In the present embodiment, gate oxide 41 is the silicon dioxide layer adopting lift-off technology to generate; The thickness of silicon dioxide layer is 10nm ~ 50nm, thus makes lower grid voltage can make anti-P trap surface depletion and non-transoid, meets the low-voltage and low-power dissipation development trend of integrated circuit.
In the present embodiment, anode electrode A, cathode electrode K, gate electrode G, P type substrate electrode 12 are the aluminium lamination adopting aluminum plating process to make.
The operation principle of the transparency electrode grid-control horizontal PIN royal purple photo-detector of the present embodiment is as follows: grid voltage V
gKunder effect, in anti-P trap 4, form longitudinal electric field, anti-P trap 4 surface depletion and non-transoid; Lateral voltage V
aKunder effect, produce transverse electric field, form having lateral depletion district as effective photoelectric conversion region; Due to grid voltage V
gKcontrol anti-P trap 4 surface depletion and non-transoid, carrier concentration reduces, and therefore can obtain larger having lateral depletion district.When royal purple light is incident, arrive anti-P trap 4 through transparent conductive film 42, backing material absorbs light and produces photo-generated carrier, under transverse electric field effect, form photogenerated current, thus realizes the detection to royal purple light.The preparation method of the transparency electrode grid-control horizontal PIN royal purple photo-detector of the present embodiment specifically adopts standard CMOS process to complete N trap (NWELL) 2, dark N trap (Deep NWELL) 3, N
+district 5, P
+the FEOL portion such as district 6, gate oxide 41, anode electrode A, cathode electrode K and P type substrate electrode 12; The backend process such as ito thin film growth and gate electrode G are completed in laboratory.Its preparation method specifically comprises the steps:
1) using low-doped p-type silicon as P type substrate 1, adopt ion implantation doping mode in P type substrate 1, form N trap (NWELL) 2 contact with dark N trap 3 with the bottom of dark N trap (Deep NWELL) 3, N trap 2 and form anti-P trap (R-WELL) 4 in the upper isolation of P type substrate.This step obtains the structure of intermediate products as shown in Figure 2, and wherein the thickness range of anti-P trap 4 is between 100nm ~ 800nm.
2) adopt diffusing, doping mode to form the N of lateral clearance layout respectively in the both sides of anti-P trap 4
+district 5 and P
+district 6, at N
+the aluminium lamination that the surface in district 5 adopts aluminum plating process to make as anode electrode A, at P
+the aluminium lamination that the surface in district 6 adopts aluminum plating process to make is as cathode electrode K; In P type substrate 1, adopt diffusing, doping mode to form P type substrate P
+district 11, and at P type substrate P
+aluminize in district 11 and generate P type substrate electrode 12; This step obtains the structure of intermediate products as shown in Figure 3.
3) N is positioned at anti-P trap 4
+district 5 and P
+between district 6, the surface coverage in region adopts lift-off technology to generate silicon dioxide layer as gate oxide 41; This step obtains the structure of intermediate products as shown in Figure 4, and the thickness range of gate oxide 41 is 10nm ~ 50nm.
4) radio frequency magnetron sputtering method growth transparent conductive film 42(ITO film is adopted on the surface of gate oxide 41), the thickness range of ito thin film is 80nm ~ 100nm, aluminizes generate gate electrode G on the surface of ito thin film.The product finally obtained as shown in Figure 1.
Above-mentioned steps 1) in ~ step 4), in P type substrate 1, adopt diffusing, doping mode to form P type substrate P
+district 11, and at P type substrate P
+aluminize in district 11 and generate P type substrate electrode 12, adopt ion implantation doping mode in P type substrate 1, form N trap (NWELL) 2 and dark N trap (Deep NWELL) 3, adopt diffusing, doping mode to form N respectively in the both sides of anti-P trap 4
+district 5 and P
+district 6, is positioned at N at anti-P trap 4
+district 5 and P
+between district 6, the surface coverage in region adopts lift-off technology to generate silicon dioxide layer as gate oxide 41, at N
+the aluminium lamination that the surface in district 5 adopts aluminum plating process to make as anode electrode A, at P
+the aluminium lamination that the surface in district 6 adopts aluminum plating process to make is standard CMOS process as cathode electrode K etc.
The foregoing is only the preferred embodiment of the present invention, protection scope of the present invention is not limited in above-mentioned execution mode, and every technical scheme belonging to the principle of the invention all belongs to protection scope of the present invention.For a person skilled in the art, some improvements and modifications of carrying out under the prerequisite not departing from principle of the present invention, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. a transparency electrode grid-control horizontal PIN royal purple photo-detector, comprise P type substrate (1), it is characterized in that: in described P type substrate (1), be provided with the N trap (2) and dark N trap (3) that adopt ion implantation doping mode to be formed, the bottom of described N trap (2) contacts with dark N trap (3) and forms anti-P trap (4) in the upper isolation of P type substrate (1), and the both sides of described anti-P trap (4) are provided with the N adopting diffusing, doping mode to form lateral clearance layout
+district (5) and P
+district (6), described anti-P trap (4) is positioned at N
+district (5) and P
+between district (6), the surface coverage in region has gate oxide (41), and the surface coverage of described gate oxide (41) has transparent conductive film (42), and described transparent conductive film (42) is provided with gate electrode G, described N
+district (5) is provided with anode electrode A, described P
+district (6) is provided with cathode electrode K.
2. transparency electrode grid-control according to claim 1 horizontal PIN royal purple photo-detector, is characterized in that: described transparent conductive film (42) is ito thin film, one in AZO film, Graphene.
3. transparency electrode grid-control according to claim 2 horizontal PIN royal purple photo-detector, is characterized in that: described P type substrate (1) adopts low-doped p
-type silicon is made.
4. transparency electrode grid-control according to claim 3 horizontal PIN royal purple photo-detector, is characterized in that: described P type substrate (1) is provided with P type substrate P
+district (11), described P type substrate P
+the surface in district (11) is provided with P type substrate electrode (12).
5., according to the horizontal PIN royal purple of the transparency electrode grid-control in Claims 1 to 4 described in any one photo-detector, it is characterized in that: the thickness of described anti-P trap (4) is 80nm ~ 800nm.
6. transparency electrode grid-control according to claim 5 horizontal PIN royal purple photo-detector, is characterized in that: described gate oxide (41) is the silicon dioxide layer adopting lift-off technology to generate.
7. transparency electrode grid-control according to claim 6 horizontal PIN royal purple photo-detector, is characterized in that: the thickness of described silicon dioxide layer is 10nm ~ 50nm.
8. transparency electrode grid-control according to claim 7 horizontal PIN royal purple photo-detector, is characterized in that: the thickness of described transparent conductive film (42) is 80nm ~ 100nm.
9. transparency electrode grid-control according to claim 8 horizontal PIN royal purple photo-detector, is characterized in that: described anode electrode A, cathode electrode K, gate electrode G, P type substrate electrode (12) are the aluminium lamination adopting aluminum plating process to make.
10. a preparation method for transparency electrode grid-control horizontal PIN royal purple photo-detector, is characterized in that comprising the steps:
1) by low-doped p
-type silicon is as P type substrate, and adopt ion implantation doping mode in described P type substrate, form N trap and dark N trap, the bottom of described N trap contacts with dark N trap and forms anti-P trap in the upper isolation of P type substrate;
2) adopt diffusing, doping mode to form the N of lateral clearance layout respectively in the both sides of described anti-P trap
+district and P
+district, at described N
+the aluminium lamination that the surface in district adopts aluminum plating process to make as anode electrode A, at described P
+the aluminium lamination that the surface in district adopts aluminum plating process to make is as cathode electrode K; In described P type substrate, adopt diffusing, doping mode to form P type substrate P
+district, and at described P type substrate P
+aluminize in district and generate P type substrate electrode;
3) N is positioned at described anti-P trap
+district and P
+between district, the surface coverage in region adopts lift-off technology to generate silicon dioxide layer as gate oxide;
4) at the superficial growth transparent conductive film of described gate oxide, aluminize on the surface of described transparent conductive film and generate gate electrode G.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107123695A (en) * | 2017-04-21 | 2017-09-01 | 清华大学 | Planar detector transistor device with door gate control and forming method thereof |
| CN107293607A (en) * | 2017-07-05 | 2017-10-24 | 京东方科技集团股份有限公司 | Photodetection structure and preparation method thereof, array base palte, display device |
| CN108701729A (en) * | 2016-01-15 | 2018-10-23 | 赫普塔冈微光有限公司 | Semiconductor device including pinned photodiode structure |
| CN110504325A (en) * | 2019-08-29 | 2019-11-26 | 上海华力微电子有限公司 | A kind of novel grid-control P-i-N diode ESD device and its implementation |
| CN110660882A (en) * | 2019-09-23 | 2020-01-07 | 深圳第三代半导体研究院 | Novel grid-controlled PIN structure GaN ultraviolet detector and preparation method thereof |
| CN114242827A (en) * | 2021-12-17 | 2022-03-25 | 中国电子科技集团公司第十三研究所 | Transverse photoelectric detector |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060003277A (en) * | 2004-07-05 | 2006-01-10 | 전자부품연구원 | Solar cell with zinc oxide thin film and fabricating method thereof |
| CN102157575A (en) * | 2011-03-28 | 2011-08-17 | 天津师范大学 | Novel transparent conducting oxide thin film with multi-layer film structure and manufacturing method thereof |
| CN102376816A (en) * | 2010-08-05 | 2012-03-14 | 石郧熙 | Technology for improving short wave responsibility of semiconductor photoelectric detector |
| CN103165726A (en) * | 2011-12-14 | 2013-06-19 | 南京大学 | PN junction thin film transistor non-volatilisation photoelectric detector |
-
2014
- 2014-11-03 CN CN201410607431.4A patent/CN104362198B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060003277A (en) * | 2004-07-05 | 2006-01-10 | 전자부품연구원 | Solar cell with zinc oxide thin film and fabricating method thereof |
| CN102376816A (en) * | 2010-08-05 | 2012-03-14 | 石郧熙 | Technology for improving short wave responsibility of semiconductor photoelectric detector |
| CN102157575A (en) * | 2011-03-28 | 2011-08-17 | 天津师范大学 | Novel transparent conducting oxide thin film with multi-layer film structure and manufacturing method thereof |
| CN103165726A (en) * | 2011-12-14 | 2013-06-19 | 南京大学 | PN junction thin film transistor non-volatilisation photoelectric detector |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108701729A (en) * | 2016-01-15 | 2018-10-23 | 赫普塔冈微光有限公司 | Semiconductor device including pinned photodiode structure |
| CN108701729B (en) * | 2016-01-15 | 2022-02-25 | 赫普塔冈微光有限公司 | Semiconductor device including pinned photodiode structure |
| CN107123695A (en) * | 2017-04-21 | 2017-09-01 | 清华大学 | Planar detector transistor device with door gate control and forming method thereof |
| CN107123695B (en) * | 2017-04-21 | 2019-03-05 | 清华大学 | Planar detector transistor device and forming method thereof with door gate control |
| CN107293607A (en) * | 2017-07-05 | 2017-10-24 | 京东方科技集团股份有限公司 | Photodetection structure and preparation method thereof, array base palte, display device |
| CN107293607B (en) * | 2017-07-05 | 2019-09-27 | 京东方科技集团股份有限公司 | Photodetection structure and preparation method thereof, array substrate, display device |
| CN110504325A (en) * | 2019-08-29 | 2019-11-26 | 上海华力微电子有限公司 | A kind of novel grid-control P-i-N diode ESD device and its implementation |
| CN110504325B (en) * | 2019-08-29 | 2023-06-02 | 上海华力微电子有限公司 | Novel grid-controlled P-i-N diode ESD device and implementation method thereof |
| CN110660882A (en) * | 2019-09-23 | 2020-01-07 | 深圳第三代半导体研究院 | Novel grid-controlled PIN structure GaN ultraviolet detector and preparation method thereof |
| CN114242827A (en) * | 2021-12-17 | 2022-03-25 | 中国电子科技集团公司第十三研究所 | Transverse photoelectric detector |
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