CN102376816A - Technology for improving short wave responsibility of semiconductor photoelectric detector - Google Patents
Technology for improving short wave responsibility of semiconductor photoelectric detector Download PDFInfo
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- CN102376816A CN102376816A CN2010102497913A CN201010249791A CN102376816A CN 102376816 A CN102376816 A CN 102376816A CN 2010102497913 A CN2010102497913 A CN 2010102497913A CN 201010249791 A CN201010249791 A CN 201010249791A CN 102376816 A CN102376816 A CN 102376816A
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Abstract
The invention belongs to the technical field of a semiconductor photoelectric detector, relating to a technology for improving short wave responsibility of the semiconductor photoelectric detector. The technology comprises the following steps of: adding a transparent conductive thin film layer on the surface of a transparent insulating medium mask layer on the front surface of the semiconductor photoelectric detector, so that a novel structure of the photoelectric detector of a TCOS structure is formed by the transparent conductive thin film layer (TC), the mask layer (O) on the front surface of the detector and the semiconductor (S) below the mask layer; and applying a voltage to the transparent conductive mask layer as a working boost voltage of the semiconductor photoelectric detector to change the surface potential of the semiconductor, a surface energy band and a surface space charge area, reduce the effective surface recombination rate of photo-production minority carriers near the surface of the semiconductor, and remove a 'dead layer' area. Therefore, most of the photo-production minority carriers of the short waves are collected to be a photo-production current, and the short wave responsibility of the semiconductor photoelectric detector is improved. In particular, the technology can be used for effectively improving the short wave responsibility of a high-silicon semiconductor blue-green photoelectric detector or blue-violet photoelectric detector.
Description
Technical field:
The invention belongs to the semiconductor photo detector technical field; Relate to a kind of technology that improves semiconductor photo detector short wave response degree; On the transparent insulation medium mask layer surface of semiconductor photo detector front surface, increase the thin layer of electrically conducting transparent; And on the thin layer of electrically conducting transparent, apply the method for voltage as the boost voltage of semiconductor photo detector work, to improve the semiconductor photo detector short wave response.Particularly, this technology can improve semiconductor blue green light electric explorers such as silicon effectively, or the responsiveness of royal purple photodetector.
Background technology:
With n type single crystal silicon, or N type polysilicon semiconductor material is substrate, the p-n junction of manufacturing (p is on n); P-i-n; In APD or the CCD Si semiconductor photodetector, have " dead layer " zone of a photo-generated carrier, and the photo-generated carrier multidigit of short-wave band is in this zone.Because " dead layer " in this type semiconductor photodetector zone exists and the compound influence of semiconductor surface; Count with the most of photoproduction in its adjacent domain in this zone that charge carrier is compound to be fallen; The result is; The semiconductor photo detector short wave response is very poor, has limited semiconductor photo detector short wave response degree.
Shallow junctions etc., the quick royal purple Si semiconductor photo detector of " dead layer " thin characteristic all to have reduced the influence in " dead layer " zone, improves Si semiconductor photo detector short wave response and short wave response degree.But these technology all can not be eliminated the influence of the compound photo-generated carrier to short-wave band of existence and the semiconductor surface in " dead layer " zone fully.
Summary of the invention:
The purpose of present technique invention; A kind of technology that improves semiconductor photo detector short wave response degree is provided; On the transparent insulation medium mask layer surface of semiconductor photo detector front surface, increase the thin layer of electrically conducting transparent; And on the thin layer of electrically conducting transparent, apply the boost voltage of voltage as semiconductor photo detector work, eliminate the influence of the compound photo-generated carrier to short-wave band of " dead layer " zone and semiconductor surface in the semiconductor photo detector; Reduce effective interface recombination rate of photo-generated carrier, improve the short wave response degree of semiconductor photo detector.For Si semiconductor blue green light electric explorer, or the royal purple photodetector, its responsiveness can be improved effectively.
Technical scheme of the present invention is following:
On the transparent insulation medium mask layer surface of semiconductor (like p-n junction, p-i-n, APD or CCD etc.) photodetector front surface, increase the thin layer of electrically conducting transparent, on the thin layer of electrically conducting transparent, apply the boost voltage of voltage as photodetector work.The transparent conductive film layer that increases can be single transparent conductive film layer or many transparent conductive films layer structure, isolates with the output electrode of semiconductor photo detector, covers the whole front surface of semiconductor photo detector.The thin layer of electrically conducting transparent (TC) and the mask layer (O) of detector front surface and the new semiconductor photo detector structure of the formation of the semiconductor (S) below mask layer TCOS structure.The transparent insulation dielectric mask mask layer of semiconductor photo detector front surface can be an individual layer, or multilayer, and the interface of the semi-conducting material below it can be an optical flat, or non-optical plane.The thickness (or each layer thickness among them) that increases thin layer and the transparent insulation dielectric mask mask layer of electrically conducting transparent will be regulated and satisfy interference that anti-short-wave band light the reflects condition that disappears mutually.
To p-n junction (p is on n) (or the p-i-n that makes with the N type semiconductor substrate; Or photodetector such as APD) photodetector; On the transparent insulation medium mask layer of photodetector front surface, increase the thin layer of electrically conducting transparent; On its transparent electrically-conductive film layer, apply negative voltage, increase the negative electricity apply and be pressed onto certain value, the surface energy band of the P type semiconductor that has a common boundary with transparent insulation medium mask layer is bent upwards; Conduction band in the surface energy band can be away near the boundary defect energy level the central authorities of forbidden band, and promptly the conduction band in the surface energy band is away from the complex centre in the forbidden band; The space surface charged region of P type semiconductor is converted to stacking states by spent condition (or anti-type state); Under the driving of surface field, photoproduction minority carrier (electronics) leaves near the semiconductor surface, moves to the p-n junction zone." dead layer " zone disappearance that this all helps effective interface recombination rate of photoproduction minority carrier to reduce rapidly and charge carrier is counted in photoproduction.And the photoproduction minority carrier advantageous particularly that short-wave band light is produced.Most these short-wave band photoproduction minority carriers can be collected into and be photogenerated current, and photodetector shortwave (or bluish-green) responsiveness is improved.
To p-n junction (n is on the p) photodetector made from the P type semiconductor substrate, same on the transparent insulation medium mask layer of photodetector, increase the thin layer of electrically conducting transparent, on the transparent electrically-conductive film layer, apply positive voltage as boost voltage.
This technology not only can be used the responsiveness of the device shortwave royal purple photodetector that improves the detection of Si semiconductor optoelectronic, can also use the photodetector of other semi-conducting materials, improves its corresponding short wave response degree.
Description of drawings:
Fig. 1. be the sketch map that improves semiconductor photo detector short wave response degree technology.
Fig. 2. be the execution mode sketch map that improves semiconductor photo detector short wave response degree technology.
Embodiment:
Below in conjunction with accompanying drawing 2, the p-n junction of Si semi-conducting material (p is on n) photodetector sketch map specifies execution mode of the present invention.Embodiment only is used for example the present invention, and scope that should not be construed as limiting the invention and essence.
Like Fig. 2:
Embodiment: 11 and 15 is output electrodes of the p-n junction photodetection of Si semi-conducting material, the 12nd, and the SiO of densification and free of pinholes
2Transparent insulation medium mask layer, 13 and 14 is the semi-conductive p-n junctions of Si.SiO
2The interface of transparent insulation dielectric mask mask layer and the semi-conducting material below it is an optical flat.At SiO
2On the transparent insulation dielectric mask mask layer 12, the contact electrode 22 of the thin layer 21 of deposition tin indium oxide (ITO) electrically conducting transparent and the thin layer of electrically conducting transparent.The thin layer 21 of this electrically conducting transparent is isolated with the output electrode 11 of semiconductor photo detector and 15.The thin layer 21 (TC) and the SiO of this electrically conducting transparent
2Transparent insulation medium mask layer (O) and SiO
2Semi-conducting material (S) below the layer constitutes TCOS structure, the thin layer 21 and the SiO of this electrically conducting transparent
2The thickness of transparent insulation medium mask layer 12 will be regulated, and satisfies the condition that anti-short-wave band interference of light disappears mutually.
On the contact electrode 22 of transparent electrically-conductive film layer, insert negative voltage; The negative voltage that inserts is increased to; The short circuit photogenerated current of semiconductor photo detector output is maximum, and the negative value that promptly at this moment on contact electrode 22, inserts is the boost voltage value of semiconductor photo detector work.Can improve Si semiconductor blue green light electric explorer effectively, or the responsiveness of royal purple photodetector.
Claims (9)
1. technology that improves semiconductor photo detector short wave response degree; It is characterized in that; On the transparent insulation dielectric layer surface of semiconductor photo detector front surface, increase the transparent electrically-conductive film layer, and on the transparent electrically-conductive film layer, apply the boost voltage of semiconductor photo detector work.
2. technology that improves semiconductor photo detector short wave response degree; It is characterized in that; On the transparent insulation dielectric layer surface of semiconductor photo detector front surface; Increasing the transparent electrically-conductive film layer can be the increase transparent electrically-conductive film layer of individual layer, also can be the transparent electrically-conductive film layer of many transparent electrically-conductive film layer structure.
3. a kind of technology that improves semiconductor photo detector short wave response degree according to claim 1; It is characterized in that; Semiconductor photo detector is the photodetector made from semi-conducting material; The transparent insulation medium mask layer of photodetector front surface is an individual layer, perhaps the passivation mask layer of sandwich construction.
4. a kind of technology that improves semiconductor photo detector short wave response degree according to claim 3; It is characterized in that; The transparent insulation medium mask layer of semiconductor photo detector front surface and below it semi-conductive interface be optical flat, perhaps non-optical plane.
5. a kind of technology that improves semiconductor photo detector short wave response degree according to claim 1 is characterized in that, the electrode isolation of the transparent conductive film layer of increase and its contact electrode and semiconductor photo detector.
6. a kind of technology that improves semiconductor photo detector short wave response degree according to claim 1; It is characterized in that; The interface of the transparent insulation medium mask layer of transparent electrically-conductive film layer and semiconductor photo detector front surface is an optical flat, perhaps non-optical plane.
7. according to claim 1 and 3 described a kind of technology that improve semiconductor photo detector short wave response degree; The thickness of the thickness of the transparent conductive film layer that increases on the transparent insulation medium mask layer of semiconductor photo detector front surface and the transparent insulation medium mask layer of semiconductor photo detector front surface will be regulated, the interference of satisfying the reflection of the anti-short-wave band light condition that disappears mutually.
8. according to claim 1 and 3 described a kind of technology that improve semiconductor photo detector short wave response degree; It is characterized in that; When the semiconductor of the transparent insulation medium mask layer lower floor of semiconductor photo detector front surface is the p N-type semiconductor N, on the transparent conductive film layer that increases, apply negative boost voltage.
9. according to claim 1 and 3 described a kind of technology that improve semiconductor photo detector short wave response degree; It is characterized in that; When the semiconductor of the transparent insulation dielectric layer lower floor of semiconductor photo detector front surface is the n N-type semiconductor N, on the transparent conductive film layer that increases, apply positive boost voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2010102497913A CN102376816A (en) | 2010-08-05 | 2010-08-05 | Technology for improving short wave responsibility of semiconductor photoelectric detector |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010102497913A CN102376816A (en) | 2010-08-05 | 2010-08-05 | Technology for improving short wave responsibility of semiconductor photoelectric detector |
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| CN102376816A true CN102376816A (en) | 2012-03-14 |
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| CN2010102497913A Pending CN102376816A (en) | 2010-08-05 | 2010-08-05 | Technology for improving short wave responsibility of semiconductor photoelectric detector |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104362198A (en) * | 2014-11-03 | 2015-02-18 | 长沙理工大学 | Transparent electrode grid-control transverse PIN blue and purple photo-detector and method for manufacturing same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3676715A (en) * | 1970-06-26 | 1972-07-11 | Bell Telephone Labor Inc | Semiconductor apparatus for image sensing and dynamic storage |
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2010
- 2010-08-05 CN CN2010102497913A patent/CN102376816A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3676715A (en) * | 1970-06-26 | 1972-07-11 | Bell Telephone Labor Inc | Semiconductor apparatus for image sensing and dynamic storage |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104362198A (en) * | 2014-11-03 | 2015-02-18 | 长沙理工大学 | Transparent electrode grid-control transverse PIN blue and purple photo-detector and method for manufacturing same |
| CN104362198B (en) * | 2014-11-03 | 2016-07-06 | 长沙理工大学 | Transparency electrode grid-control transverse direction PIN royal purple photo-detector and preparation method thereof |
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Application publication date: 20120314 |