CN204130541U - A kind of planar diode - Google Patents
A kind of planar diode Download PDFInfo
- Publication number
- CN204130541U CN204130541U CN201420582185.7U CN201420582185U CN204130541U CN 204130541 U CN204130541 U CN 204130541U CN 201420582185 U CN201420582185 U CN 201420582185U CN 204130541 U CN204130541 U CN 204130541U
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- connecting structure
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- island region
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Abstract
The utility model relates to a kind of planar diode, comprise cathode leg, described cathode leg is connected with sheet metal, be provided with N-type region above described sheet metal, in described N-type region, be provided with p type island region, between described N-type region and p type island region, be provided with PN junction, silicon dioxide substrates is provided with above described p type island region, be provided with metal connecting structure in described silicon dioxide substrates, described metal connecting structure lower end and p type island region upper surface ohmic contact, described metal connecting structure upper end is provided with anode tap.The utility model structure is simple, easily encapsulation, cheap for manufacturing cost, the rectified current carried, repercussion voltage are comparatively large, not easily breakdown.
Description
Technical field
The utility model relates to a kind of semiconductor device, particularly relates to a kind of planar diode.
Background technology
Diode is a kind of two-terminal device with unilateal conduction, have electronic diode and crystal diode point, electronic diode is now seldom seen, and much more common and conventional is crystal diode.The unilateal conduction characteristic of diode, almost in all electronic circuits, all will use semiconductor diode, it plays an important role in many circuit, and it is one of semiconductor device be born the earliest, and its application also widely.
At present, diode manufacturing technology is quite ripe, but still there is complex structure, cost is high, encapsulation is difficult, the easy problem such as breakdown.
Utility model content
Technical problem to be solved in the utility model is to provide that a kind of structure is simple, easily encapsulation, cheap for manufacturing cost, the rectified current carried, repercussion voltage are comparatively large, not easily breakdown planar diode.
The technical scheme that the utility model solves the problems of the technologies described above is as follows: a kind of planar diode, comprise cathode leg, described cathode leg is connected with sheet metal, N-type region is provided with above described sheet metal, p type island region is provided with in described N-type region, PN junction is provided with between described N-type region and p type island region, silicon dioxide substrates is provided with above described p type island region, metal connecting structure is provided with in described silicon dioxide substrates, described metal connecting structure lower end and p type island region upper surface ohmic contact, described metal connecting structure upper end is provided with anode tap.
Described N-type region, diffusion p type impurity, form p type island region, and utilize the shielding action of silicon dioxide meter surface oxidation film, N-type region optionally spreads the PN junction of a part and formation, because the surface of PN junction is covered by silicon dioxide oxide-film, be conducive to the raising of diode stability and long service life.
On the basis of technique scheme, the utility model can also do following improvement.
Further, described sheet metal is copper sheet metal, and described copper sheet metal resistor rate is low, conductivity strong, for collection and the transmission of PN junction rectified current.
Further, described anode tap, cathode leg are copper-plated metal, and described copper-plated metal hardness is large, be conducive to going between support, the lead resistance of copper facing simultaneously rate is low, contributes to reducing the interference to rectified current.
Further, described metal connecting structure is aluminum metal, and described aluminum metal plasticity is better, and be easy to the encapsulation of diode with closed, described aluminum metal good conductivity, is conducive to the conducting between each structure.
The beneficial effects of the utility model are: structure is simple, easily encapsulation, cheap for manufacturing cost, and the rectified current carried, repercussion voltage are comparatively large, not easily breakdown.
Accompanying drawing explanation
Fig. 1 is a kind of planar diode structural representation of the utility model;
In accompanying drawing, the list of parts representated by each label is as follows: 1, cathode leg, and 2, sheet metal, 3, N-type region, 4, PN junction, 5, p type island region, 6, silicon dioxide substrates, 7, metal connecting structure, 8, anode tap.
Embodiment
Be described principle of the present utility model and feature below in conjunction with accompanying drawing, example, only for explaining the utility model, is not intended to limit scope of the present utility model.
As shown in Figure 1, a kind of planar diode, comprise cathode leg 1, described cathode leg 1 is connected with sheet metal 2, N-type region 3 is provided with above described sheet metal 2, p type island region 5 is provided with in described N-type region 3, PN junction 4 is provided with between described N-type region 3 and p type island region 5, silicon dioxide substrates 6 is provided with above described p type island region 5, metal connecting structure 7 is provided with in described silicon dioxide substrates 6, described metal connecting structure 7 lower end and p type island region 5 upper surface ohmic contact, described metal connecting structure 7 upper end is provided with anode tap 8.
Described N-type region 3, diffusion p type impurity, form p type island region 5, and utilize the shielding action of silicon dioxide 6 surface film oxide, N-type region 3 optionally spreads the PN junction 4 of a part and formation, because the surface of PN junction 4 is covered by silicon dioxide 6 oxide-film, be conducive to the raising of diode stability and long service life.
Described sheet metal 2 is copper sheet metal, and described copper sheet metal resistor rate is low, conductivity strong, for collection and the transmission of PN junction rectified current; Described anode tap 8, cathode leg 1 are copper-plated metal, and described copper-plated metal hardness is large, be conducive to going between support, the lead resistance of copper facing simultaneously rate is low, contributes to reducing the interference to rectified current; Described metal connecting structure 7 is aluminum metal, and described aluminum metal plasticity is better, and be easy to the encapsulation of diode with closed, described aluminum metal good conductivity, is conducive to the conducting between each structure.
The foregoing is only preferred embodiment of the present utility model, not in order to limit the utility model, all within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.
Claims (4)
1. a planar diode, it is characterized in that, comprise cathode leg, described cathode leg is connected with sheet metal, is provided with N-type region above described sheet metal, p type island region is provided with in described N-type region, be provided with PN junction between described N-type region and p type island region, above described p type island region, be provided with silicon dioxide substrates, in described silicon dioxide substrates, be provided with metal connecting structure, described metal connecting structure lower end and p type island region upper surface ohmic contact, described metal connecting structure upper end is provided with anode tap.
2. a kind of planar diode according to claim 1, it is characterized in that, described sheet metal is copper sheet metal.
3. a kind of planar diode according to claim 1, it is characterized in that, described anode tap, cathode leg are copper-plated metal.
4. a kind of planar diode according to claim 1, it is characterized in that, described metal connecting structure is aluminum metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420582185.7U CN204130541U (en) | 2014-09-30 | 2014-09-30 | A kind of planar diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420582185.7U CN204130541U (en) | 2014-09-30 | 2014-09-30 | A kind of planar diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204130541U true CN204130541U (en) | 2015-01-28 |
Family
ID=52386868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420582185.7U Expired - Fee Related CN204130541U (en) | 2014-09-30 | 2014-09-30 | A kind of planar diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204130541U (en) |
-
2014
- 2014-09-30 CN CN201420582185.7U patent/CN204130541U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150128 Termination date: 20150930 |
|
| EXPY | Termination of patent right or utility model |