CN203071080U - Diode component having temperature compensation - Google Patents
Diode component having temperature compensation Download PDFInfo
- Publication number
- CN203071080U CN203071080U CN2013200128881U CN201320012888U CN203071080U CN 203071080 U CN203071080 U CN 203071080U CN 2013200128881 U CN2013200128881 U CN 2013200128881U CN 201320012888 U CN201320012888 U CN 201320012888U CN 203071080 U CN203071080 U CN 203071080U
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- China
- Prior art keywords
- diode
- temperature coefficient
- type
- heavily doped
- compensating
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- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- Thyristors (AREA)
Abstract
A diode component having temperature compensation includes a negative temperature coefficient diode and a positive temperature coefficient diode, wherein the positive temperature coefficient diode is connected with the negative temperature coefficient diode in series. One end of same semiconductor polarity of the negative temperature coefficient diode and the positive temperature coefficient diode is electrically connected with each other, so that a voltage drift phenomenon caused by temperature can be countervailed.
Description
Technical field
The utility model relates to a kind of diode element, particularly a kind of diode element with temperature-compensating.
Background technology
Because the forward bias voltage drop conducting of PN junction rectifier, the characteristic that reverse bias ends, the PN junction rectifier often uses as switch.On the other hand, when Zener diode (Zener Diode) reaches breakdown voltage in receiving reverse bias, can provide the characteristic of stable magnitude of voltage.Therefore, PN junction rectifier and Zener diode are extensively applied in the various circuit.
Yet no matter be the PN junction rectifier, also or Zener diode, it is along with the variations in temperature of operational environment, and its terminal voltage will rise thereupon or descend.For example: with the rising of the temperature of operational environment, the terminal voltage of Zener diode will descend thereupon, and the terminal voltage of PN junction rectifier will rise thereupon.That is to say that Zener diode is the element of negative temperature coefficient, the PN junction rectifier is the element of positive temperature coefficient.No matter be positive temperature coefficient element, or negative temperature coefficient unit, how to overcome it because of the voltage drift that variation of ambient temperature causes, be the problem that solves for association area personnel utmost point desire.
The utility model content
In view of above problem, the purpose of this utility model is to provide a kind of diode element with temperature-compensating, uses the existing problem that how to overcome the voltage drift that diode element causes because of variation of ambient temperature of prior art that solves.
For reaching above-mentioned purpose, the utility model provides a kind of diode element with temperature-compensating, and it comprises:
One negative temperature coefficient diode; And
One positive temperature coefficient diode is series at this negative temperature coefficient diode, and this negative temperature coefficient diode is electrically connected to each other with the end of this positive temperature coefficient diode with identical polarity of semiconductor.
The above-mentioned diode element with temperature-compensating, wherein this negative temperature coefficient diode and this positive temperature coefficient diode all comprise a p type semiconductor layer connected to one another and a n type semiconductor layer, wherein those n type semiconductor layers are connected to each other, this p type semiconductor layer of this negative temperature coefficient diode is positioned at the side away from this positive temperature coefficient diode, and this p type semiconductor layer of this positive temperature coefficient diode is positioned at the side away from this negative temperature coefficient diode.
The above-mentioned diode element with temperature-compensating, wherein this negative temperature coefficient diode and this positive temperature coefficient diode all comprise a p type semiconductor layer connected to one another and a n type semiconductor layer, wherein those p type semiconductor layers are connected to each other, this n type semiconductor layer of this negative temperature coefficient diode is positioned at the side away from this positive temperature coefficient diode, and this n type semiconductor layer of this positive temperature coefficient diode is positioned at the side away from this negative temperature coefficient diode.
The above-mentioned diode element with temperature-compensating, wherein this negative temperature coefficient diode is Zener diode.
The above-mentioned diode element with temperature-compensating, wherein this positive temperature coefficient diode is diode.
The above-mentioned diode element with temperature-compensating, wherein this negative temperature coefficient diode is identical with the cross-pressure amplitude of variation of variation of ambient temperature with this positive temperature coefficient diode with the cross-pressure amplitude of variation of variation of ambient temperature.
The above-mentioned diode element with temperature-compensating wherein more comprises a lead, is electrically connected between the end of this identical polarity of semiconductor that this negative temperature coefficient diode and this positive temperature coefficient diode be electrically connected to each other.
The above-mentioned diode element with temperature-compensating, wherein this positive temperature coefficient diode comprises a N-type substrate and is positioned at the P type heavily doped region on this N-type substrate top, and this negative temperature coefficient diode comprises a N-type heavily doped region that is positioned at this N-type substrate top and is positioned at another P type heavily doped region of N-type heavily doped region.
The above-mentioned diode element with temperature-compensating, wherein this positive temperature coefficient diode comprises a N-type substrate and is positioned at the P type heavily doped region on this N-type substrate top, and this negative temperature coefficient diode comprises a N-type heavy doping substrate that is positioned at this N-type substrate downside and is positioned at another P type heavily doped region of N-type heavy doping substrate.
The above-mentioned diode element with temperature-compensating, wherein this positive temperature coefficient diode comprises a N-type substrate and is positioned at the P type heavily doped region on this N-type substrate top, and this negative temperature coefficient diode comprises this P type heavily doped region that shares with this positive temperature coefficient diode and is positioned at a N-type heavily doped region of this P type heavily doped region.
According to the diode element with temperature-compensating of the present utility model, utilization is in conjunction with negative temperature coefficient diode and positive temperature coefficient diode, with the voltage drift that compensates one another and cause because of variations in temperature, make the terminal voltage of diode element of this tool temperature-compensating can keep fixing.
Below in conjunction with the drawings and specific embodiments the utility model is described in detail, but not as to restriction of the present utility model.
Description of drawings
Fig. 1 is the application circuit according to the diode element with temperature-compensating of the utility model first embodiment;
Fig. 2 is the schematic diagram according to the diode element with temperature-compensating of the utility model first embodiment;
Fig. 3 is the structural representation according to the diode element with temperature-compensating of the utility model first embodiment;
Fig. 4 is along the cutaway view of A-A ' line among Fig. 3;
Fig. 5 is another structural representation according to the diode element with temperature-compensating of the utility model first embodiment;
Fig. 6 is along the cutaway view of B-B ' line among Fig. 4;
Fig. 7 is the structural representation again according to the diode element with temperature-compensating of the utility model first embodiment;
Fig. 8 is the application circuit according to the diode element with temperature-compensating of the utility model second embodiment;
Fig. 9 is the schematic diagram according to the diode element with temperature-compensating of the utility model second embodiment;
Figure 10 is the structural representation according to the diode element with temperature-compensating of the utility model second embodiment; And
Figure 11 is along the cutaway view of C-C ' line among Figure 10.
Wherein, Reference numeral
The diode element of 100 tool temperature-compensatings
120 negative temperature coefficient diodes
121 p type semiconductor layers
121a, 121b, 121c P type heavily doped region
123 n type semiconductor layers
123a, 123c N type heavily doped region
123b N type heavy doping substrate
125,125a, 125b electrode
127,127c electrode
130 leads
132 oxide layers
140 positive temperature coefficient diodes
141 p type semiconductor layers
141a, 141b, 141c P type heavily doped region
143 n type semiconductor layers
143a, 143b, 143c N-type substrate
145,145a, 145b electrode
147,147c electrode
200 direct voltages
300 resistance
Embodiment
Below in conjunction with accompanying drawing structural principle of the present utility model and operation principle are done concrete description:
Fig. 1 is the application circuit according to the diode element 100 of the tool temperature-compensating of the utility model first embodiment.
As shown in Figure 1, have the diode element 100(of temperature-compensating hereinafter to be referred as diode element 100) reception direct voltage 200.Can couple resistance 300 between diode element 100 and the direct voltage 200.
In this, negative temperature coefficient diode 120 can be Zener diode; Positive temperature coefficient diode 140 can be the PN junction rectifier.And negative temperature coefficient diode 120 and positive temperature coefficient diode 140 join each other with cathode terminal.
As shown in Figure 1, negative temperature coefficient diode 120 is forward bias voltage drop (forward biased), and produces the pressure drop (as 0.6 volt to 0.7 volt) that is equivalent to connect face voltage; Positive temperature coefficient diode 140 is reverse bias (Reverse biased), and has the cross-pressure that is equivalent to breakdown voltage.In this, negative temperature coefficient diode 120 is roughly identical with the cross-pressure amplitude of variation of variation of ambient temperature with positive temperature coefficient diode 140 with the cross-pressure amplitude of variation of variation of ambient temperature, so negative temperature coefficient diode 120 can offset the voltage drift that causes because of variations in temperature each other with positive temperature coefficient diode 140.Thus, the cross-pressure of diode element 100 can be stable at the specific voltage value, and namely the breakdown voltage of negative temperature coefficient diode 120 deducts the face that the connects voltage of positive temperature coefficient diode 140.
Fig. 2 is the schematic diagram according to the diode element with temperature-compensating 100 of the utility model first embodiment.
As shown in Figure 2, negative temperature coefficient diode 120 comprises P type semiconductor 121 connected to one another and n type semiconductor layer 123, and positive temperature coefficient diode 140 also comprises p type semiconductor layer 141 connected to one another and n type semiconductor layer 143.N type semiconductor layer 121 is connected to each other with n type semiconductor layer 141.The p type semiconductor layer 121 of negative temperature coefficient diode 120 is sides that are positioned at away from positive temperature coefficient diode 140, and the p type semiconductor layer 141 of positive temperature coefficient diode 140 is sides that are positioned at away from negative temperature coefficient diode 120.
In this, the p type semiconductor layer 121 of negative temperature coefficient diode 120 is P type heavily doped layer (P+), and the n type semiconductor layer 123 of negative temperature coefficient diode 120 is N-type heavily doped layer (N+).The p type semiconductor layer 141 of positive temperature coefficient diode 140 is P type heavily doped layer (P+), and the n type semiconductor layer 143 of positive temperature coefficient diode 140 is the general doped layer of N-type (N).
In one embodiment, the doping content of P type heavily doped layer and N-type heavily doped layer is about 10
18Atom/cm
3To 10
20Atom/cm
3The doping content of the general doped layer of N-type is about 10
16Atom/cm
3To 10
18Atom/cm
3In this, only for giving an example, embodiment of the present utility model is non-as limit for described doping content, has the knack of those skilled in the art when visual employed substrate material and foreign atom material adjustment doping content and realizes aforementioned general doping and heavy doping.
Fig. 3 is the structural representation according to the diode element with temperature-compensating 100 of the utility model first embodiment.Fig. 4 is along the cutaway view of A-A ' line among Fig. 3.
Merging is with reference to Fig. 3 and shown in Figure 4, and the n type semiconductor layer 123 of negative temperature coefficient diode 120 is the tops that are positioned at its p type semiconductor layer 121.Negative temperature coefficient diode 120 more comprises electrode 125 and electrode 127.Electrode 125 is positioned on the p type semiconductor layer 121, and forms ohmic contact with p type semiconductor layer 121.Electrode 127 is positioned on the n type semiconductor layer 123, and forms ohmic contact with n type semiconductor layer 123.Similar in appearance to negative temperature coefficient diode 120, positive temperature coefficient diode 140 more comprises electrode 145 and electrode 147.Electrode 145 is positioned on the p type semiconductor layer 141, and forms ohmic contact with p type semiconductor layer 141.Electrode 147 is positioned on the n type semiconductor layer 143, and forms ohmic contact with n type semiconductor layer 143.
In this, metal material such as lead 130 can gold, copper, aluminium or alloy are made.
Fig. 5 is another structural representation according to the diode element with temperature-compensating 100 of the utility model first embodiment.Fig. 6 is along the cutaway view of B-B ' line among Fig. 4.
Merging is with reference to Fig. 5 and shown in Figure 6, and positive temperature coefficient diode 140 comprises N-type substrate 143a and is positioned at the P type heavily doped region 141a of N-type substrate 143a upper end; Negative temperature coefficient diode 120 comprises the N-type heavily doped region 123a that is positioned at N-type substrate 143a top and is positioned at another P type heavily doped region 121a of N-type heavily doped region 123a.
In this, negative temperature coefficient diode 120 also comprises electrode 125a; Positive temperature coefficient diode 140 also comprises electrode 145a.Electrode 125a is positioned on the P type heavily doped region 121a, and forms ohmic contact with P type heavily doped region 121a.Electrode 145a is positioned on the P type heavily doped region 141a, and forms ohmic contact with P type heavily doped region 141a.By this, electrode 125b is equivalent to the anode electrode of diode element 100; Electrode 145b is equivalent to the cathode electrode of diode element 100.
As shown in Figure 6, diode element 100 also comprises oxide layer 132.Oxide layer 132 is covered in negative temperature coefficient diode 120 and positive temperature coefficient diode 140 tops, and makes electrode 125a and electrode 145a be exposed to diode element 100 surfaces, electrically connects for the outside.
Fig. 7 is the structural representation again according to the diode element with temperature-compensating 100 of the utility model first embodiment.
As shown in Figure 7, the positive temperature coefficient diode 140 of diode element 100 comprises N-type substrate 143b and is positioned at the P type heavily doped region 141b on N-type substrate 143b top; The negative temperature coefficient diode 120 of diode element 100 comprises the N-type heavy doping substrate 123b that is positioned at N-type substrate 143b downside and is positioned at another P type heavily doped region 121b of N-type heavy doping substrate.
In this, negative temperature coefficient diode 120 also comprises electrode 125b; Positive temperature coefficient diode 140 also comprises electrode 145b.Electrode 125b is positioned on the P type heavily doped region 121b, and forms ohmic contact with P type heavily doped region 121b.Electrode 145b is positioned on the P type heavily doped region 141b, and forms ohmic contact with P type heavily doped region 141b.By this, electrode 125b is equivalent to the anode electrode of diode element 100; Electrode 145b is equivalent to the cathode electrode of diode element 100, electrically connects for the outside.
Fig. 8 is the application circuit according to the diode element with temperature-compensating 100 of the utility model second embodiment.Fig. 9 is the schematic diagram according to the diode element with temperature-compensating 100 of the utility model second embodiment.
Merging is with reference to Fig. 8 and shown in Figure 9, and the difference of itself and first embodiment is that in the diode element 100 of present embodiment, negative temperature coefficient diode 120 and positive temperature coefficient diode 140 are to join each other with anode tap.
Figure 10 is the structural representation according to the diode element with temperature-compensating 100 of the utility model second embodiment.Figure 11 is along the cutaway view of C-C ' line among Figure 10.
Merging is with reference to Figure 10 and shown in Figure 11, and positive temperature coefficient diode 140 comprises N-type substrate 143c and is positioned at the P type heavily doped region 141c on N-type substrate 143c top; Negative temperature coefficient diode 120 comprises the P type heavily doped region 121c that shares with positive temperature coefficient diode 140 and the N-type heavily doped region 123c that is positioned at P type heavily doped region 141c.
In this, negative temperature coefficient diode 120 also comprises electrode 127c; Positive temperature coefficient diode 140 also comprises electrode 147c.Electrode 127c is positioned on the N-type heavily doped region 123c, and forms ohmic contact with N-type heavily doped region 123c.Electrode 147c is positioned on the N-type substrate 143c, and forms ohmic contact with N-type substrate 143c.By this, electrode 147c is equivalent to the anode electrode of diode element 100; Electrode 127c is equivalent to the cathode electrode of diode element 100, electrically connects for the outside.
Metal materials such as above-mentioned electrode 125,125a, 125b, 127,127c can gold, silver, copper, iron, aluminium, nickel or alloy are made.Aforementioned oxide layer 132 can be insulation materials such as silicon dioxide.
In sum, according to the diode element 100 with temperature-compensating of the present utility model, utilize its inner negative temperature coefficient diode 120 and positive temperature coefficient diode 140, can offset the voltage drift phenomenon that Yin Wendu causes, feasible terminal voltage with diode element 100 of temperature-compensating can be kept fixing.Therefore, when 140 receptions of positive temperature coefficient diode are equivalent to the forward bias voltage drop of end face voltage, and negative temperature coefficient diode 120 receives when being equivalent to the reverse bias of breakdown voltage, and diode element 100 can stably provide reference voltage (being the cross-pressure of diode element 100).
Certainly; the utility model also can have other various embodiments; under the situation that does not deviate from the utility model spirit and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the utility model, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the utility model.
Claims (10)
1. the diode element with temperature-compensating is characterized in that, comprises:
One negative temperature coefficient diode; And
One positive temperature coefficient diode is series at this negative temperature coefficient diode, and this negative temperature coefficient diode is electrically connected to each other with the end of this positive temperature coefficient diode with identical polarity of semiconductor.
2. the diode element with temperature-compensating according to claim 1, it is characterized in that, this negative temperature coefficient diode and this positive temperature coefficient diode all comprise a p type semiconductor layer connected to one another and a n type semiconductor layer, wherein those n type semiconductor layers are connected to each other, this p type semiconductor layer of this negative temperature coefficient diode is positioned at the side away from this positive temperature coefficient diode, and this p type semiconductor layer of this positive temperature coefficient diode is positioned at the side away from this negative temperature coefficient diode.
3. the diode element with temperature-compensating according to claim 1, it is characterized in that, this negative temperature coefficient diode and this positive temperature coefficient diode all comprise a p type semiconductor layer connected to one another and a n type semiconductor layer, wherein those p type semiconductor layers are connected to each other, this n type semiconductor layer of this negative temperature coefficient diode is positioned at the side away from this positive temperature coefficient diode, and this n type semiconductor layer of this positive temperature coefficient diode is positioned at the side away from this negative temperature coefficient diode.
4. the diode element with temperature-compensating according to claim 1 is characterized in that, this negative temperature coefficient diode is Zener diode.
5. the diode element with temperature-compensating according to claim 1 is characterized in that, this positive temperature coefficient diode is diode.
6. the diode element with temperature-compensating according to claim 1 is characterized in that, this negative temperature coefficient diode is identical with the cross-pressure amplitude of variation of variation of ambient temperature with this positive temperature coefficient diode with the cross-pressure amplitude of variation of variation of ambient temperature.
7. according to any described diode element with temperature-compensating in the claim 1 to 6, it is characterized in that, more comprise a lead, be electrically connected between the end of this identical polarity of semiconductor that this negative temperature coefficient diode and this positive temperature coefficient diode be electrically connected to each other.
8. according to claim 1,2,4,5 or 6 described diode elements with temperature-compensating, it is characterized in that, this positive temperature coefficient diode comprises a N-type substrate and is positioned at a P type heavily doped region on this N-type substrate top, and this negative temperature coefficient diode comprises a N-type heavily doped region that is positioned at this N-type substrate top and is positioned at another P type heavily doped region of N-type heavily doped region.
9. according to claim 1,2,4,5 or 6 described diode elements with temperature-compensating, it is characterized in that, this positive temperature coefficient diode comprises a N-type substrate and is positioned at a P type heavily doped region on this N-type substrate top, and this negative temperature coefficient diode comprises a N-type heavy doping substrate that is positioned at this N-type substrate downside and is positioned at another P type heavily doped region of N-type heavy doping substrate.
10. according to claim 1,3,4,5 or 6 described diode elements with temperature-compensating, it is characterized in that, this positive temperature coefficient diode comprises a N-type substrate and is positioned at a P type heavily doped region on this N-type substrate top, and this negative temperature coefficient diode comprises this P type heavily doped region that shares with this positive temperature coefficient diode and is positioned at a N-type heavily doped region of this P type heavily doped region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013200128881U CN203071080U (en) | 2013-01-09 | 2013-01-09 | Diode component having temperature compensation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013200128881U CN203071080U (en) | 2013-01-09 | 2013-01-09 | Diode component having temperature compensation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203071080U true CN203071080U (en) | 2013-07-17 |
Family
ID=48769839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013200128881U Expired - Lifetime CN203071080U (en) | 2013-01-09 | 2013-01-09 | Diode component having temperature compensation |
Country Status (1)
| Country | Link |
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| CN (1) | CN203071080U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108933517A (en) * | 2018-09-06 | 2018-12-04 | 广州金升阳科技有限公司 | The output voltage feed circuit and temperature-compensation circuit of switch converters |
| CN111900211A (en) * | 2020-06-30 | 2020-11-06 | 中国振华集团永光电子有限公司（国营第八七三厂） | Low-temperature coefficient planar diode chip structure and production process thereof |
-
2013
- 2013-01-09 CN CN2013200128881U patent/CN203071080U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108933517A (en) * | 2018-09-06 | 2018-12-04 | 广州金升阳科技有限公司 | The output voltage feed circuit and temperature-compensation circuit of switch converters |
| CN111900211A (en) * | 2020-06-30 | 2020-11-06 | 中国振华集团永光电子有限公司（国营第八七三厂） | Low-temperature coefficient planar diode chip structure and production process thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130717 |