CN202009004U - Novel silicon carbide schottky diode - Google Patents
Novel silicon carbide schottky diode Download PDFInfo
- Publication number
- CN202009004U CN202009004U CN2011201044884U CN201120104488U CN202009004U CN 202009004 U CN202009004 U CN 202009004U CN 2011201044884 U CN2011201044884 U CN 2011201044884U CN 201120104488 U CN201120104488 U CN 201120104488U CN 202009004 U CN202009004 U CN 202009004U
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- novel silicon
- schottky diode
- anode
- sic epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The utility model relates to a semiconductor device and discloses a novel silicon carbide schottky diode applied to high pressure and high frequency systems such as a high power rectifier, a switching power supply, a frequency converter and the like. The novel silicon carbide schottky diode comprises a cathode and an anode, wherein a plurality of SiC (silicon carbide) epitaxial layers spliced up and down are arranged between the cathode and the anode, and the upper end surface of the SiC epitaxial layers is provided with P zones. In the novel silicon carbide schottky diode, the number of the SiC epitaxial layers is increased so that the SBD (schottky barrier diode) reverse blocking voltage is increased, on resistance of the device is reduced, and conduction loss of the schottky barrier diode is lower.
Description
Technical field
The utility model relates to a kind of semiconductor device, relates in particular to a kind of diode that is applied in the devices such as high voltagehigh frequency system such as power rectifier, Switching Power Supply, frequency converter.
Background technology
Schottky barrier diode (SBD) is the power diode that utilizes metal to contact with semiconductor surface to form the nonlinear characteristic of potential barrier to make.SBD does not have the injection and the storage of additional carriers in turn on process, thereby does not have reverse recovery current basically, and its turn off process is very fast, and switching loss is very little.
But the conducting resistance of SBD is along with the raising of its blocking voltage increases sharply (2.5 powers of conduction resistance and blocking voltage are directly proportional), and in the SBD of higher pressure device, its conducting resistance can be quite big.Along with the requirement to blocking voltage is more and more higher, the application of existing structure has been subjected to tangible restriction.Given this, press for a kind of new diode structure of invention, can under certain blocking voltage grade condition, reduce the conducting resistance of SBD.
Summary of the invention
The utility model provides a kind of novel silicon carbide Schottky diode at the existing deficiency of SBD structure in application.The utility model can realize that the conduction resistance of device and blocking voltage are proportional, compare with traditional SBD structure, it is under certain blocking voltage class requirement, can reduce the conducting resistance of SBD greatly, reduce its on-state loss, make the performance of silicon carbide schottky diode obtain good improvement.
In order to solve the problems of the technologies described above, the utility model is solved by following technical proposals:
The novel silicon carbide Schottky diode comprises negative electrode and anode, is provided with the SiC epitaxial loayer that several layers splices up and down between described negative electrode and the anode, and the upper surface of SiC epitaxial loayer is provided with the P district.
As preferably, describedly between undermost SiC epitaxial loayer and negative electrode, be provided with the SiC substrate, the described Schottky Barrier Contact metal level that between the SiC of the superiors epitaxial loayer and anode, is provided with.
The utility model has significant technique effect owing to adopted above technical scheme: on the basis of common Schottky barrier diode structure, by the quantity of increase SiC epitaxial loayer, thereby improve SBD reverse blocking voltage, reduce the conducting resistance of device.Industrial manufacture process of the present utility model reduces the technology that the SBD conducting resistance reduces on-state loss than other, more can save production cost, and promptly promotes the service behaviour of Schottky barrier diode with relatively low cost.
Description of drawings
Fig. 1 is a structural representation of the present utility model.
Embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is described in further detail:
Embodiment, the novel silicon carbide Schottky diode as shown in Figure 1, comprises negative electrode 1 and anode 6, is provided with the SiC epitaxial loayer 3 that several layers splices up and down between described negative electrode 1 and the anode 6, the upper surface of SiC epitaxial loayer 3 is provided with P district 4.
Describedly between undermost SiC epitaxial loayer 3 and negative electrode 1, be provided with SiC substrate 2, describedly between the SiC of the superiors epitaxial loayer 3 and anode 6, be provided with Schottky Barrier Contact metal level 5.
The utility model is when work, and forward current enters into Schottky Barrier Contact metal level 5 by anode 6, flows into SiC epitaxial loayer 3 successively, is flowed out by negative electrode 1 at last.When the SBD forward bias, PN junction also enters the positively biased state, but the cut-in voltage of SBD is lower than PN junction, forward current will be by the SBD passage, N type SBD passage is resistive zone, so forward voltage drop reduces greatly than PN junction, and a plurality of epitaxial layer structure can reduce greatly than the conducting resistance of single layer structure.In like manner, under identical conducting resistance, its reverse blocking electric pressure can greatly improve.
In a word, the above only is preferred embodiment of the present utility model, and all equalizations of being done according to the utility model claim change and modify, and all should belong to the covering scope of the utility model patent.
Claims (2)
1. novel silicon carbide Schottky diode, comprise negative electrode (1) and anode (6), it is characterized in that: be provided with the SiC epitaxial loayer (3) that several layers splices up and down between described negative electrode (1) and the anode (6), the upper surface of SiC epitaxial loayer (3) is provided with P district (4).
2. novel silicon carbide Schottky diode according to claim 1, it is characterized in that: described being positioned between undermost SiC epitaxial loayer (3) and the negative electrode (1) is provided with SiC substrate (2), is provided with Schottky Barrier Contact metal level (5) between described SiC epitaxial loayer (3) that is positioned at the superiors and the anode (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201044884U CN202009004U (en) | 2011-04-12 | 2011-04-12 | Novel silicon carbide schottky diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201044884U CN202009004U (en) | 2011-04-12 | 2011-04-12 | Novel silicon carbide schottky diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202009004U true CN202009004U (en) | 2011-10-12 |
Family
ID=44750663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011201044884U Expired - Fee Related CN202009004U (en) | 2011-04-12 | 2011-04-12 | Novel silicon carbide schottky diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202009004U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140100121A (en) * | 2013-02-05 | 2014-08-14 | 엘지이노텍 주식회사 | Epitaxial wafer and method for fabricating the same |
| US20150311290A1 (en) * | 2012-11-30 | 2015-10-29 | Lg Innotek Co., Ltd | Epitaxial wafer and switch element and light-emitting element using same |
-
2011
- 2011-04-12 CN CN2011201044884U patent/CN202009004U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150311290A1 (en) * | 2012-11-30 | 2015-10-29 | Lg Innotek Co., Ltd | Epitaxial wafer and switch element and light-emitting element using same |
| US9793355B2 (en) * | 2012-11-30 | 2017-10-17 | Lg Innotek Co., Ltd. | Epitaxial wafer and switch element and light-emitting element using same |
| KR20140100121A (en) * | 2013-02-05 | 2014-08-14 | 엘지이노텍 주식회사 | Epitaxial wafer and method for fabricating the same |
| KR102098209B1 (en) | 2013-02-05 | 2020-04-08 | 엘지이노텍 주식회사 | Epitaxial wafer and method for fabricating the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104919595A (en) | Systems, circuits, devices, and methods with bidirectional bipolar transistors | |
| CN104221156B (en) | Diode | |
| CN104409519A (en) | Diode with floating island structure | |
| CN102664197B (en) | JFET (Junction Field Effect Transistor) and manufacturing method thereof, and micro inverter using JFET | |
| CN101764162A (en) | Metallic oxide field-effect diode and MOS diode | |
| CN103779274A (en) | Constant-current diode unit and manufacturing method thereof | |
| CN202009004U (en) | Novel silicon carbide schottky diode | |
| CN203351612U (en) | Schottky diode | |
| CN110534583A (en) | A kind of Schottky diode and preparation method thereof | |
| CN202601620U (en) | Fast recovery diode | |
| CN104638020A (en) | Epitaxial layer-based vertical current regulative diode and manufacturing method thereof | |
| CN102487088A (en) | Constant current diode with vertical channels | |
| CN203179900U (en) | A fast recovery diode FRD chip | |
| CN102569421B (en) | Novel silicon carbide Schottky diode | |
| CN109119490A (en) | A kind of slot grid diode of composite construction | |
| CN108695396A (en) | A kind of diode and preparation method thereof | |
| CN202977427U (en) | Constant current diode unit structure | |
| CN209544357U (en) | A kind of device with reversed through-flow function | |
| CN103872110A (en) | Back surface structure of reverse conducting IGBT and manufacturing method thereof | |
| CN208608204U (en) | High surge current ability silicon carbide diode | |
| CN203607418U (en) | Composite fast-recovery diode | |
| CN102184971A (en) | Groove type carborundum Schottky power device | |
| CN201741702U (en) | Schottky diode with gird protection structure | |
| CN204792803U (en) | Perpendicular field effect diode | |
| CN102403321A (en) | Semiconductor device and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111012 Termination date: 20150412 |
|
| EXPY | Termination of patent right or utility model |