CN103872110A - Back surface structure of reverse conducting IGBT and manufacturing method thereof - Google Patents
Back surface structure of reverse conducting IGBT and manufacturing method thereof Download PDFInfo
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- CN103872110A CN103872110A CN201210526482.5A CN201210526482A CN103872110A CN 103872110 A CN103872110 A CN 103872110A CN 201210526482 A CN201210526482 A CN 201210526482A CN 103872110 A CN103872110 A CN 103872110A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 3
- 229910052751 metal Inorganic materials 0.000 claims abstract description 48
- 239000002184 metal Substances 0.000 claims abstract description 48
- 238000002347 injection Methods 0.000 claims abstract description 27
- 239000007924 injection Substances 0.000 claims abstract description 27
- 239000011248 coating agent Substances 0.000 claims description 61
- 238000000576 coating method Methods 0.000 claims description 61
- 230000004888 barrier function Effects 0.000 claims description 50
- 239000012535 impurity Substances 0.000 claims description 28
- 238000001259 photo etching Methods 0.000 claims description 26
- 238000000137 annealing Methods 0.000 claims description 22
- 238000002360 preparation method Methods 0.000 claims description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 238000009740 moulding (composite fabrication) Methods 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005465 channeling Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0821—Collector regions of bipolar transistors
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- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
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Abstract
The invention discloses a back surface structure of a reverse conducting IGBT. The back surface structure includes a drift region, a first N+ buffer layer, an insulating layer, a P+ collector region, an N+ short circuit region and a collector electrode metal layer. The P+ collector region is separated from the N+ short circuit region by the drift region in the middle. A depleted part of the N+ short circuit region is connected to the collector electrode metal layer via the insulating layer, and the rest is directly connected to the collector electrode metal layer. The back surface structure and a manufacturing method thereof provided by the utility model add the low-doped drift region of an N- region between the P+ collector region and the N+ short circuit region, so that the P+ collector region is more positively biased, and thus rebounding phenomena are avoided. Besides, the back structure can increase the effective conducting area of the P+ collector region and the total injection of a cavity, reduces conductive voltage drop, and thus reduces power consumption.
Description
Technical field
The present invention relates to power semiconductor technical field, particularly the contrary structure of type IGBT and preparation method thereof of leading.
Background technology
Be a kind of novel power device against leading type IGBT, when it has many merits, also introduced some shortcomings, as rebound phenomenon.
Can find contrary lead most of structure of type IGBT and traditional IGBT structural similarity by contrast.Maximum difference is that contrary collector electrode of leading type IGBT is not continuous P
+district, but introduce discontinuously some N
+shorting region.
The contrary P that leads type IGBT
-base, N
-drift region, N
+resilient coating and N
+shorting region has formed a PIN diode.Be equivalent to an IGBT and a PIN diode inverse parallel against leading type IGBT, only on same chip, realized.When IGBT is in the time bearing back-pressure, this PIN diode conducting, this is also called the contrary reason of leading type IGBT just.At blocking interval, against leading type IGBT for drift region excess carrier provide one effectively to take passage away, greatly shorten the contrary turn-off time of leading type IGBT.
The contrary thought of leading type IGBT has been saved chip area, encapsulation, testing expense, has reduced device cost.In addition, it also has low loss, good SOA characteristic, positive temperature coefficient, and good soft turn-off characteristic, short circuit characteristic and good power cycle characteristic.
But, against leading type IGBT in having plurality of advantages, also bring a little problems.Most importantly rebound phenomenon.The principle that produces rebound phenomenon is not difficult to explain.Lead the type IGBT conducting initial stage contrary, device is one pole conducting, can be described as the VDMOS pattern that is operated in.Electronics is from Channeling implantation N
-drift region, almost vertical current is to collector electrode, and when flowing into after resilient coating, electron stream flows out device after being pooled to collector electrode shorting region.As we can see from the figure, at P
+top, district, electronics is laterally to flow to N+ shorting region.Like this from P
+area edge is to P
+central authorities of district electromotive force declines gradually, and this electromotive force and P
+the electromotive force in district has determined whether collector junction is opened.Originally electron current density is little, and as shown in Figure 1a, the pressure drop deficiency producing is so that collector junction unlatching.Collector junction both sides electromotive force is less than its Built-in potential (Vmg<Vmf< everywhere ... <Vma<0.7V), now do not have hole to inject, there is not electricity and lead modulation, therefore conduction voltage drop is very large yet.Along with VCE increases, electron current density increases, and collector junction forward bias increases.As shown in Fig. 1 b figure, until collector junction part conducting (Vmg< ... Vmd<0.7V<Vmc< ... <Vma), part P
+district starts injected hole, and electricity is led modulation and started, and conduction voltage drop declines to a great extent, and now device has entered IGBT pattern, and this has just seen above-mentioned rebound phenomenon.
A kind of contrary type IGBT that leads is also disclosed in prior art, the CURRENT DISTRIBUTION when forward conduction as shown in Figure 2, although can effectively eliminate rebound phenomenon, due to P
+collector region 1 and N
+short-circuited region 2 direct neighbors, cause part P
+conducting is failed in collector region 1, makes P
+the hole injection efficiency of collector region 1 reduces, and the utilance of waste chip, increases manufacturing cost so indirectly.
Summary of the invention
Technical problem to be solved by this invention is to provide contrary structure of type IGBT and preparation method thereof of leading of a kind of energy suppression device rebound phenomenon.
For solving the problems of the technologies described above, one aspect of the present invention provides a kind of contrary structure of leading type IGBT, comprising: drift region, a N
+resilient coating, insulating barrier, P
+collector region, N
+shorting region and collector electrode metal layer;
Described P
+collector region is arranged on bottom, described drift region one side, described N
+shorting region is arranged on bottom, described drift region opposite side, described P
+collector region and described N
+in the middle of shorting region, separate by described drift region;
Described P
+collector region is by a described N
+resilient coating is connected with described drift region;
Described drift region and a N
+resilient coating is all connected with described collector electrode metal layer by described insulating barrier;
Described P
+collector region is connected with described collector electrode metal layer;
Described N
+the part that exhausts of shorting region is connected with described collector electrode metal layer by described insulating barrier, and other parts are directly connected with described collector electrode metal layer.
Further, the described contrary structure of leading type IGBT, also comprises:
The 2nd N
+resilient coating, described N
+shorting region is by described the 2nd N
+resilient coating is connected with described drift region, described the 2nd N
+resilient coating is connected with described collector electrode metal layer by described insulating barrier.
Another aspect of the present invention, provides a kind of preparation method of the contrary structure of leading type IGBT, comprising: by after chip back attenuate, prepare insulating barrier in bottom surface, drift region;
By the underrun photoetching of described drift region, then carry out N-type Impurity injection after annealing, form N
+resilient coating;
By bottom surface, described drift region one side by photoetching, then carry out p type impurity inject after annealing, form P
+collector region;
By bottom surface, described drift region opposite side by photoetching, then carry out N-type Impurity injection, annealing after, form N
+shorting region, described P
+collector region and described N
+between shorting region, separate by described drift region;
By described P
+collector region, N
+shorting region and the metallization of insulating barrier bottom surface form collector electrode metal layer.
Further, described by drift region underrun photoetching, then carry out N-type Impurity injection after annealing, form N
+resilient coating comprises:
By whole described drift region underrun photoetching, then carry out, after N-type Impurity injection, annealing, forming a N in a side of described insulating barrier
+resilient coating, forms the 2nd N at the opposite side of described insulating barrier
+resilient coating, makes described P
+collector region is by a described N
+resilient coating is connected with described drift region, makes described N+ shorting region by described the 2nd N
+resilient coating is connected with described drift region.
Further, described by drift region underrun photoetching, then carry out N-type Impurity injection after annealing, form N
+resilient coating comprises:
, then carry out after N-type Impurity injection, annealing by photoetching local bottom surface, described drift region, at side formation the one N of described insulating barrier
+resilient coating, makes described P
+collector region is by a described N
+resilient coating is connected with described drift region, makes described N
+shorting region is directly connected with described drift region.
Further, the described insulating barrier of preparing in bottom surface, drift region is directly drift region to be oxidized or at the back side, drift region deposit one deck SiO
2after carry out again photoetching, obtain insulating barrier.
Further, described drift region and resilient coating are all connected with described collector electrode metal layer by described insulating barrier;
Described P
+collector region is connected with described collector electrode metal layer;
Described N
+the part that exhausts of shorting region is connected with described collector electrode metal layer by described insulating barrier, and other parts are directly connected with described collector electrode metal layer.
Further, in the time forming described resilient coating, the N-type impurity of injection comprises phosphorus, arsenic or hydrogen.
Further, forming described P
+, the p type impurity of injection comprises phosphorus, arsenic or hydrogen when the collector region.
Further, forming described N
+when shorting region, the N-type impurity of injection comprises boron or aluminium.
A kind of contrary structure of type IGBT and preparation method thereof of leading provided by the invention, by P
+collector region and N
+between shorting region, add one section of low-doped N
-the drift region in region, can make P like this
+collector region is positively biased greatly, thereby can avoid the generation of rebound phenomenon, and this structure can also increase P in addition
+the effective conducting area in collector region, the total injection in increase hole, has reduced conduction voltage drop, thereby reduces power consumption.
Brief description of the drawings
Fig. 1 a and Fig. 1 b are that existing contrary rebound phenomenon of leading type IGBT produces schematic diagram;
Fig. 2 is existing contrary current distributing figure while leading type IGBT forward conduction;
The structural representation of a kind of contrary structure of leading type IGBT that Fig. 3 provides for the embodiment of the present invention one;
Fig. 4 is the structural representation of preparing insulating barrier in the embodiment of the present invention two;
Fig. 5 prepares N in the embodiment of the present invention two
+the structural representation of resilient coating;
Fig. 6 prepares P in the embodiment of the present invention two
+the structural representation of collector region;
Fig. 7 prepares N in the embodiment of the present invention two
+the structural representation of shorting region;
Fig. 8 is the structural representation of preparing collector electrode metal layer in the embodiment of the present invention two;
Fig. 9 is the equivalent circuit diagram of structure shown in Fig. 8.
Embodiment
Embodiment mono-:
As shown in Figure 3, a kind of contrary structure of leading type IGBT that the present embodiment provides comprises: drift region 100, a N
+ resilient coating 101, P
+collector region 102, N
+shorting region 103, insulating barrier 104 and collector electrode metal layer 105.P
+collector region 102 is arranged on drift region 100 bottom one sides, N
+shorting region 103 is arranged on drift region 100 bottom opposite sides, P
+collector region 102 and N
+in the middle of shorting region 103, separate by drift region 100, drift region 100 is low-doped N
-region.P
+collector region 102 is by a N
+ resilient coating 101 is connected with drift region 100.Drift region 100 and a N
+ resilient coating 101 is all connected with collector electrode metal layer 105 by insulating barrier 104.P
+collector region 102 is connected with collector electrode metal layer 105; N
+the part that exhausts of shorting region 103 is connected with collector electrode metal layer 105 by insulating barrier 104, and other parts are directly connected with collector electrode metal layer 105.
The method of the above-mentioned contrary structure of leading type IGBT of preparation that the present embodiment provides, comprises following step:
Step S1: by after chip back attenuate, prepare insulating barrier 104 in 100 bottom surfaces, drift region.Specifically prepare insulating barrier 104 in 100 bottom surfaces, drift region and be and directly drift region 100 is oxidized or at drift region 100 back side deposit one deck SiO
2after carry out again photoetching, obtain insulating barrier 104.
Step S2: by drift region 100 underrun photoetching, then carry out N-type Impurity injection after annealing, form N
+resilient coating; Specifically by local bottom surface, drift region by photoetching, then carry out after N-type Impurity injection, annealing, at side formation the one N of insulating barrier
+ resilient coating 101.
Step S3: by drift region 100 bottom surface one sides by photoetching, then carry out p type impurity inject after annealing, form P
+collector region 102, and P
+collector region 102 is by a N
+ resilient coating 101 is connected with drift region 100.
Step S4: by drift region 100 bottom surface opposite sides by photoetching, then carry out N-type Impurity injection, annealing after, form N
+shorting region 103, makes P
+collector region 102 and N
+in the middle of shorting region 103, separate by drift region 100, and N
+shorting region 103 is directly connected with drift region 100.
Step S5: by P
+collector region 102, N
+shorting region 103 and insulating barrier 104 bottom surface metallization form collector electrode metal layer 105.Drift region 100 and a N
+ resilient coating 101 is all connected with collector electrode metal layer 105 by insulating barrier 104; P
+collector region 102 is connected with collector electrode metal layer 105; N
+the part that exhausts of shorting region 103 is connected with collector electrode metal layer 105 by insulating barrier 104, and other parts are directly connected with collector electrode metal layer 105.
Embodiment bis-:
As shown in Figure 8, a kind of contrary structure of leading type IGBT that the present embodiment provides comprises: drift region 200, a N
+ resilient coating 201, the 2nd N
+ resilient coating 206, P
+collector region 202, N
+shorting region 203, insulating barrier 204 and collector electrode metal layer 205.P
+collector region 202 is arranged on drift region 200 bottom one sides, N
+shorting region 203 is arranged on drift region 200 bottom opposite sides, P
+collector region 202 and N
+in the middle of shorting region 203, separate by drift region 200, drift region 200 is low-doped N
-region.P
+collector region 202 is by a N
+ resilient coating 201 is connected with drift region 200.Drift region 200, a N
+ resilient coating 201 and the 2nd N
+ resilient coating 206 is all connected with collector electrode metal layer 205 by insulating barrier 204.P
+collector region 202 is connected with collector electrode metal layer 205.N
+shorting region 203 is by the 2nd N
+ resilient coating 206 is connected with drift region 200.N
+the part that exhausts of shorting region 203 is connected with collector electrode metal layer 205 by insulating barrier 204, and other parts are directly connected with collector electrode metal layer 205.
The method of the above-mentioned contrary structure of leading type IGBT of preparation that the present embodiment provides, comprises following step:
Step S1: as shown in Figure 4, by after chip back attenuate, prepare insulating barrier 204 in 200 bottom surfaces, drift region.Specifically prepare insulating barrier 204 in 200 bottom surfaces, drift region and be and directly drift region 200 is oxidized or at drift region 200 back side deposit one deck SiO
2after carry out again photoetching, obtain insulating barrier 204.
Step S2: as shown in Figure 5, by drift region 200 underrun photoetching, then carry out N-type Impurity injection after annealing, form N
+resilient coating; Specifically by bottom surface, drift region all by photoetching, then carry out N-type Impurity injection, annealing after, insulating barrier one side form a N
+ resilient coating 201, forms the 2nd N at the opposite side of insulating barrier
+ resilient coating 206.
Step S3: as shown in Figure 6, by drift region 200 bottom surface one sides by photoetching, then carry out p type impurity inject after annealing, form P
+collector region 202, and P+ collector region 202 is by a N
+ resilient coating 201 is connected with drift region 200.
Step S4: as shown in Figure 7, by drift region 200 bottom surface opposite sides by photoetching, then carry out N-type Impurity injection, annealing after, form N
+shorting region 203, makes P+ collector region 202 and N
+in the middle of shorting region 203, separate by drift region 200, and N
+shorting region is by the 2nd N
+ resilient coating 206 is connected with drift region 200.
Step S5: as shown in Figure 8, by P
+collector region 202, N
+shorting region 203 and insulating barrier 204 bottom surface metallization form collector electrode metal layer 205.Drift region 200 and a N
+ resilient coating 201 is all connected with collector electrode metal layer 205 by insulating barrier 204; P
+collector region 202 is connected with collector electrode metal layer 205; N
+the part that exhausts of shorting region 203 is connected with collector electrode metal layer 205 by insulating barrier 204, and other parts are directly connected with collector electrode metal layer 205.
As shown in Figure 9, this circuit is made up of R1 and R2 the equivalent circuit diagram of said structure, and wherein R1 is P
+the distributed resistance of top, collector region resilient coating, R2 is P
+collector region and N
+the distributed resistance of drift region in the middle of shorting region.Compared with Fig. 2, structure of the present invention is a many R2 resistance, because doping content is very low, so the resistance of R2 is very large.After electric current flows through R2, can produce larger pressure drop, thereby make P
+collector region positively biased, can suppress rebound phenomenon on the one hand, can reduce on the other hand invalid P
+collector region area, increases hole and injects, thereby reduced conduction voltage drop and loss.
Contrary structure of type IGBT and preparation method thereof of leading provided by the invention, by P+ collector region and N
+in the middle of shorting region, place one section of drift region, P
+n need to be used in collector region
+resilient coating parcel, N
+shorting region can have N
+resilient coating, also can not arrange N
+resilient coating.In order to prevent N
+shorting region break-through, has thereunder made the insulating barrier of a layer thickness.The width of insulating barrier on the one hand will be N
+resilient coating and the isolation of collector electrode metal layer, ensure N in the time of forward blocking on the other hand
+exhausting partly of shorting region can not contact with collector electrode metal layer.By the improvement to structure, not only effectively suppress the rebound phenomenon of device, can also improve the area that hole is injected, reduce conducting voltage and device loss.
It should be noted last that, above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although the present invention is had been described in detail with reference to example, those of ordinary skill in the art is to be understood that, can modify or be equal to replacement technical scheme of the present invention, and not departing from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of claim scope of the present invention.
Claims (10)
1. a contrary structure of leading type IGBT, is characterized in that, comprising:
Drift region, a N
+resilient coating, insulating barrier, P
+collector region, N
+shorting region and collector electrode metal layer;
Described P
+collector region is arranged on bottom, described drift region one side, described N
+shorting region is arranged on bottom, described drift region opposite side, described P
+collector region and described N
+in the middle of shorting region, separate by described drift region;
Described P
+collector region is by a described N
+resilient coating is connected with described drift region;
Described drift region and a N
+resilient coating is all connected with described collector electrode metal layer by described insulating barrier;
Described P
+collector region is connected with described collector electrode metal layer;
Described N
+the part that exhausts of shorting region is connected with described collector electrode metal layer by described insulating barrier, and other parts are directly connected with described collector electrode metal layer.
2. the contrary structure of leading type IGBT as claimed in claim 1, is characterized in that, also comprises:
The 2nd N
+resilient coating, described N
+shorting region is by described the 2nd N
+resilient coating is connected with described drift region, described the 2nd N
+resilient coating is connected with described collector electrode metal layer by described insulating barrier.
3. a preparation method for the contrary structure of leading type IGBT, is characterized in that, comprising:
By after chip back attenuate, prepare insulating barrier in bottom surface, drift region;
By the underrun photoetching of described drift region, then carry out N-type Impurity injection after annealing, form N
+resilient coating;
By bottom surface, described drift region one side by photoetching, then carry out p type impurity inject after annealing, form P
+collector region;
By bottom surface, described drift region opposite side by photoetching, then carry out N-type Impurity injection, annealing after, form N
+shorting region, described P
+collector region and described N
+between shorting region, separate by described drift region;
By described P
+collector region, N
+shorting region and the metallization of insulating barrier bottom surface form collector electrode metal layer.
4. the preparation method of the contrary structure of leading type IGBT as claimed in claim 3, is characterized in that, described by drift region underrun photoetching, then carries out N-type Impurity injection after annealing, forms N
+resilient coating comprises:
By whole described drift region underrun photoetching, then carry out, after N-type Impurity injection, annealing, forming a N in a side of described insulating barrier
+resilient coating, forms the 2nd N at the opposite side of described insulating barrier
+resilient coating, makes described P
+collector region is by a described N
+resilient coating is connected with described drift region, makes described N+ shorting region by described the 2nd N
+resilient coating is connected with described drift region.
5. the preparation method of the contrary structure of leading type IGBT as claimed in claim 3, is characterized in that, described by drift region underrun photoetching, then carries out N-type Impurity injection after annealing, forms N
+resilient coating comprises:
, then carry out after N-type Impurity injection, annealing by photoetching local bottom surface, described drift region, at side formation the one N of described insulating barrier
+resilient coating, makes described P
+collector region is by a described N
+resilient coating is connected with described drift region, makes described N
+shorting region is directly connected with described drift region.
6. the preparation method of the contrary structure of leading type IGBT as described in claim 4 or 5, is characterized in that:
The described insulating barrier of preparing in bottom surface, drift region is directly drift region to be oxidized or at the back side, drift region deposit one deck SiO
2after carry out again photoetching, obtain insulating barrier.
7. the preparation method of the contrary structure of leading type IGBT as claimed in claim 6, is characterized in that:
Described drift region and resilient coating are all connected with described collector electrode metal layer by described insulating barrier;
Described P
+collector region is connected with described collector electrode metal layer;
Described N
+the part that exhausts of shorting region is connected with described collector electrode metal layer by described insulating barrier, and other parts are directly connected with described collector electrode metal layer.
8. the preparation method of the contrary structure of leading type IGBT as claimed in claim 6, is characterized in that:
In the time forming described resilient coating, the N-type impurity of injection comprises phosphorus, arsenic or hydrogen.
9. the preparation method of the contrary structure of leading type IGBT as claimed in claim 6, is characterized in that:
Forming described P
+, the p type impurity of injection comprises boron, aluminium, gallium or indium when the collector region.
10. the preparation method of the contrary structure of leading type IGBT as claimed in claim 6, is characterized in that:
Forming described N
+when shorting region, the N-type impurity of injection comprises phosphorus, arsenic or hydrogen.
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| CN104979378A (en) * | 2014-04-03 | 2015-10-14 | 上海联星电子有限公司 | Collector structure of semiconductor device and TI-IGBT (Triple Mode Integrate-Insulated Gate Bipolar Transistor) |
| CN116825835A (en) * | 2023-07-25 | 2023-09-29 | 四川奥库科技有限公司 | Back structure of reverse-conduction IGBT device and manufacturing method |
| WO2024027357A1 (en) * | 2022-08-04 | 2024-02-08 | 无锡华润上华科技有限公司 | Field-stop insulated gate bipolar transistor and manufacturing method therefor |
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| CN101127365A (en) * | 2006-08-18 | 2008-02-20 | 三垦电气株式会社 | Isolated gate type bipolar transistor |
| US20100096664A1 (en) * | 2008-10-17 | 2010-04-22 | Kabushiki Kaisha Toshiba | Semiconductor device |
| KR20100085508A (en) * | 2009-01-21 | 2010-07-29 | 용 서 구 | Trench insulated gate bipolar trangistor |
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| CN101127365A (en) * | 2006-08-18 | 2008-02-20 | 三垦电气株式会社 | Isolated gate type bipolar transistor |
| US20100096664A1 (en) * | 2008-10-17 | 2010-04-22 | Kabushiki Kaisha Toshiba | Semiconductor device |
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| CN104979378A (en) * | 2014-04-03 | 2015-10-14 | 上海联星电子有限公司 | Collector structure of semiconductor device and TI-IGBT (Triple Mode Integrate-Insulated Gate Bipolar Transistor) |
| CN104979378B (en) * | 2014-04-03 | 2020-01-31 | 上海联星电子有限公司 | Collector structure of semiconductor device and TI-IGBT |
| WO2024027357A1 (en) * | 2022-08-04 | 2024-02-08 | 无锡华润上华科技有限公司 | Field-stop insulated gate bipolar transistor and manufacturing method therefor |
| CN116825835A (en) * | 2023-07-25 | 2023-09-29 | 四川奥库科技有限公司 | Back structure of reverse-conduction IGBT device and manufacturing method |
| CN116825835B (en) * | 2023-07-25 | 2024-05-14 | 四川奥库科技有限公司 | Back structure of reverse-conduction IGBT device and manufacturing method |
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|---|---|
| CN103872110B (en) | 2018-03-30 |
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