KR20100085508A - Trench insulated gate bipolar trangistor - Google Patents
Trench insulated gate bipolar trangistor Download PDFInfo
- Publication number
- KR20100085508A KR20100085508A KR1020090004828A KR20090004828A KR20100085508A KR 20100085508 A KR20100085508 A KR 20100085508A KR 1020090004828 A KR1020090004828 A KR 1020090004828A KR 20090004828 A KR20090004828 A KR 20090004828A KR 20100085508 A KR20100085508 A KR 20100085508A
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- South Korea
- Prior art keywords
- tigbt
- gate
- igbt
- turn
- voltage drop
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- 230000015556 catabolic process Effects 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 18
- 230000005684 electric field Effects 0.000 abstract description 5
- 238000002347 injection Methods 0.000 abstract description 5
- 239000007924 injection Substances 0.000 abstract description 5
- 230000005669 field effect Effects 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 230000001965 increasing effect Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
With the rapid development of the IT industry and the issue of energy efficiency, the power industry is becoming more important, and it is clear that the semiconductor technology centered on silicon is to support this power industry. Among the power semiconductor devices, especially Insulated Gate Bipolar Transistor (IGBT) is a power switching device that combines the advantages of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Bipolar Junction Transistor (BJT), which was introduced by BJ Baliga in 1980. Since then, BJT has been drawing attention as an alternative device to overcome the complex current control circuit, slow switching speed problem, and low breakdown voltage and poor current control capability of the MOSFET. IGBTs basically act like BJTs, exhibiting low forward voltage drop characteristics, and have a low concentration of N-type drift (11) layers to withstand high breakdown voltages. These IGBTs have low forward voltage drop and high switching speed due to the gate 29 driving, which increases the reliability of the voltage and current and increases the range of applications. It is encroaching on the electronics industry. However, despite the advantages of the IGBT, in the case of the horizontal gate IGBT (Fig. 2), the forward voltage drop problem and the turn-off caused by the junction field effect transistor (JFET) region 10 are shown. Many problems remain to be improved, such as turn-off time delay due to time hole current. On the other hand, unlike the gate gate IGBT (FIG. 2), the trench gate IGBT (FIG. 3) does not have a JFET region 10, and thus a lower forward voltage drop can be obtained. It can be reduced to less than half than the horizontal gate IGBT (Fig. 2), which is advantageous for miniaturization of the module. However, the yield characteristic due to the field concentration at the edge 37 of the gate 29 may be somewhat reduced. Therefore, the present invention overcomes the structural limitations of the existing TIGBT (FIG. 3) and devises a new structure of TIGBT having more excellent electrical characteristics.
The TIGBT of FIG. 4 maximizes the injection efficiency of the first conductivity (holes) into the N-drift layer 11 by isolating the P + collector 32 to the oxide layer 33. It is characterized by a lower forward voltage drop than the structure. The TIGBT of FIG. 5 causes the portion of the electric field concentrated toward the gate edge 37 toward the junction by convex 34 the P-Base 26 structure between the gates 29. The higher breakdown voltage than the existing structure and the convex 34 structure of the P-base 26 also improve the flow of the first conductivity type (hole) during turn-off. It features faster turn-off times than the structure. Therefore, the TIGBT of FIG. 6 is combined to have all of the excellent electrical characteristics of FIGS. 4 and 5, and the forward voltage drop, the breakdown characteristic, and the turn-off characteristic can be improved more than the conventional TIGBT (FIG. 3) device. .
Description
Recently, with the rapid development of the IT industry, the energy efficiency problem has emerged, the power industry is becoming more important. It is clear that the power industry is a semiconductor technology centered on silicon. Therefore, IGBT is a power switching device that combines the advantages of MOSFET and BJT. It can overcome the problems of BJT's complex current control circuit, slow switching speed, low breakdown and poor current control capability of MOSFET. It is attracting attention as an alternative element. However, in the case of the horizontal gate IGBT (FIG. 2), the IGBT has many problems that need to be improved such as a forward voltage drop caused by the
The present invention relates to a TIGBT having a TIGBT (FIG. 6) structure having improved forward voltage drop, breakdown characteristics, and electrical characteristics of turn-off.
The general Insulated Gate Bipolar Transistor (IGBT) has the same characteristics as that of MOS-Gate thyristors, but has different characteristics in that the structure of parasitic thyristor (PNPN) is operated so as not to turn on. In addition, IGBTs can be implemented in planar cellular, stripe, or topology, and these devices have intrinsic JFETs. JFETs increase the forward voltage drop (Vce, sat) by increasing device on-resistance.
The IGBT (Fig. 2) is a planar IGBT, which is a junction field effect due to diffusion of a depletion layer between the P-
TIGBT (FIG. 3) has no
Therefore, it is necessary to improve the breakdown characteristics due to low yield and slow turn-off time in the planar IGBT (FIG. 2) and the field concentration occurring in the TIGBT (FIG. 3).
According to the present invention, the hole injection efficiency into the N-
The present invention can reduce the forward voltage by maximizing the hole injection efficiency from the TIGBT to the N-drift region (11) layer, the portion of the electric field concentrated toward the gate edge (37) The breakdown voltage can be increased by inducing to the junction. In addition, the turn-off time can be lowered by improving the flow of holes during turn-off.
In the present invention, the structure of TIGBT (Figs. 4, 5, 6) for improving the electrical characteristics of the IGBT, using the TIGBT (Fig. 3) to obtain a low forward voltage drop without changing the concentration of the P + collector (Collector) at the bottom of the device The P + collector (32) is isolated to isolate the portion of the (32) portion from the oxide film (Sio2) 33 so as to reduce the effect of the turn-off loss in the trade-off relationship according to the forward voltage drop. In order to obtain a high yielding characteristic without changing the concentration by using the structure of TIGBT (Fig. 4) and the existing TIGBT (Fig. 3) in which the N +
The semiconductor device embodied in the present invention includes a
The operation when the semiconductor device is on will be described. If a predetermined on voltage is applied to the
(1) Embodiment 1
The TIGBT included in the semiconductor device according to the first embodiment of the present invention will be described below with reference to FIG. 4. First, in order to realize a low on-voltage increase in TIGBT, it is preferable that the trench gate width is wider in consideration of the charge density efficiency of the cell. The trench gate is wide and the area of the P-type base layer 26 is reduced. This weakens the effect of the holes injected from the collector 32, which is a P + type semiconductor, into the N-
(2) Embodiment 2
A trench gate type IGBT included in the semiconductor device according to the second embodiment of the present invention will be described below with reference to FIG. 5.
(3) Embodiment 3
A trench gate type IGBT included in the semiconductor device according to Embodiment 3 of the present invention will be described below with reference to FIG. 6.
1 is an internal drive circuit diagram of the IGBT.
2 is a cross-sectional view of a planar IGBT structure of the existing structure.
3 is a cross-sectional view of the TIGBT structure of the existing structure.
4 is a cross-sectional view of a TIGBT structure for low forward voltage drop according to the present invention.
5 is a cross-sectional view of a vertical TIGBT structure for high breakdown voltage and fast turn-off time according to the present invention.
Figure 6 is a cross-sectional view of a TIGBT structure for low forward voltage drop and high breakdown voltage fast turn-off time in accordance with the present invention.
10 Junction Field Effect Transistor (JFET) area
11 N-type semiconductor layer
12 P type base layer
13 P-Latch
14 N-type emitter
15 P-type semiconductor substrate
16 Collector Electrode
17 Gate Electrode
18 emitter electrode
26 P-type base layer
27 P-type emitter area
28 N-type emitter area
29 Gate Area
30 emitter electrodes
31 N-type impurity diffusion layer
32 P-type collector area
33 Oxide (Sio2)
34 P-type base diffusion layer
37 Gate Edge Area
38 gate oxide
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020090004828A KR20100085508A (en) | 2009-01-21 | 2009-01-21 | Trench insulated gate bipolar trangistor |
Applications Claiming Priority (1)
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KR1020090004828A KR20100085508A (en) | 2009-01-21 | 2009-01-21 | Trench insulated gate bipolar trangistor |
Publications (1)
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KR20100085508A true KR20100085508A (en) | 2010-07-29 |
Family
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KR1020090004828A KR20100085508A (en) | 2009-01-21 | 2009-01-21 | Trench insulated gate bipolar trangistor |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102832240A (en) * | 2012-09-11 | 2012-12-19 | 电子科技大学 | Insulated gate bipolar transistor with dielectric layer at collector terminal |
KR101352766B1 (en) * | 2011-12-08 | 2014-01-15 | 서강대학교산학협력단 | The planar gate IGBT with nMOS |
CN103872110A (en) * | 2012-12-07 | 2014-06-18 | 中国科学院微电子研究所 | Back surface structure of reverse conducting IGBT and manufacturing method thereof |
CN106298897A (en) * | 2015-05-15 | 2017-01-04 | 国网智能电网研究院 | A kind of planar gate IGBT with separate type colelctor electrode and preparation method thereof |
WO2023155585A1 (en) * | 2022-02-21 | 2023-08-24 | 珠海零边界集成电路有限公司 | Insulated gate bipolar transistor and manufacturing method therefor, electronic device and storage medium |
WO2023155584A1 (en) * | 2022-02-21 | 2023-08-24 | 珠海零边界集成电路有限公司 | Insulated gate bipolar transistor, manufacturing method, electronic device, and storage medium |
-
2009
- 2009-01-21 KR KR1020090004828A patent/KR20100085508A/en not_active Application Discontinuation
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101352766B1 (en) * | 2011-12-08 | 2014-01-15 | 서강대학교산학협력단 | The planar gate IGBT with nMOS |
CN102832240A (en) * | 2012-09-11 | 2012-12-19 | 电子科技大学 | Insulated gate bipolar transistor with dielectric layer at collector terminal |
CN103872110A (en) * | 2012-12-07 | 2014-06-18 | 中国科学院微电子研究所 | Back surface structure of reverse conducting IGBT and manufacturing method thereof |
CN106298897A (en) * | 2015-05-15 | 2017-01-04 | 国网智能电网研究院 | A kind of planar gate IGBT with separate type colelctor electrode and preparation method thereof |
WO2023155585A1 (en) * | 2022-02-21 | 2023-08-24 | 珠海零边界集成电路有限公司 | Insulated gate bipolar transistor and manufacturing method therefor, electronic device and storage medium |
WO2023155584A1 (en) * | 2022-02-21 | 2023-08-24 | 珠海零边界集成电路有限公司 | Insulated gate bipolar transistor, manufacturing method, electronic device, and storage medium |
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