CN209544357U - A kind of device with reversed through-flow function - Google Patents

Abstract

The utility model proposes a kind of device with reversed through-flow function, the device passes through GCT chip module n⁺Buffer layer and p⁺Emitter doping and the production high concentration p below gate pole⁺Doping improves the characteristic of GCT chip；And the IGCT driving circuit or ETO driving circuit being connected on GCT chip module by setting, make to be formed between the cathode and gate pole of the GCT chip reversed through-flow, it realizes the reversed through-flow function of IGCT or ETO device, and ensure that the device still has the performance of traditional IGCT or ETO device in forward conduction；Meanwhile the device realizes the reversed through-flow of IGCT or ETO device, processing step is simple, improves industrial yield rate in the case where not changing original GCT structure and not influencing IGCT or ETO device normal function.

Description

A kind of device with reversed through-flow function

Technical field

The utility model relates to power electronics field more particularly to a kind of devices with reversed through-flow function.

Background technique

Fig. 1 shows the structural schematic diagram of traditional GCT unit, as shown, existing tradition GCT unit mainly includes GCT Chip and corresponding tight type gate-drive two parts, GCT chip interior are typical unsymmetric structure, and GCT chip interior is set PN junction is set, and the PN junction is P-type semiconductor and N-type semiconductor to be produced on by diffusion using different doping process The semiconductor-based on piece of same, the semiconductor chip is usually silicon or germanium, in the friendship of the P-type semiconductor and N-type semiconductor Interface just forms space-charge region and is known as PN junction, the structural schematic diagram of the PN junction according to prior art as shown in Figure 2.PN Knot has unilateral conduction, is the characteristic that many devices are utilized in electronic technology, and PN junction constitutes semiconductor diode, bipolarity The material base of transistor.The structure is when applying forward voltage, the first PN junction J1 as shown in Figure 1 and third PN junction J3 positively biased, the second PN junction J2 is reverse-biased, and since n base resistance rate level is lower, which is able to bear several kV voltages；However the knot For structure when applying backward voltage, the first PN junction J1 and third PN junction J3 shown in Fig. 1 are reverse-biased, the second PN junction J2 positively biased, due to First PN junction J1 and the second PN junction J3 doping concentration are higher, which is only 20V or so.For the GCT core of traditional structure For piece, due to the presence of transparent anode and buffer layer structure, the first PN junction J1 will appear under extremely low backward voltage Zener breakdown or punch-through breakdown.Therefore when applying backward voltage, voltage is mainly dropped at third PN junction J3；However it is actually answering With in situation, GCT chip cooperation gate-drive is used in conjunction with, and the voltage's distribiuting of the internal base area p or the base area n will receive driving electricity Road influences.In normal conditions, the control logic of conventional gate driving are as follows: in the bar state, apply on cathode and compare gate pole The electric signal of the high 20V of current potential stablizes blocking state to ensure that device is in；In the on state, it injects and drives from gate pole to cathode Streaming current, trigger device conducting.At this time under situation of opening or blackout conditions, integrally apply reversed electricity to IGCT/ETO device Pressure easily causes the damage of driving circuit.

In the application such as converter, power electronic devices usually requires to have reversed through-flow ability, this usually by Device exterior anti-paralleled diode manufactures both modes of diode in the non-region GCT of chip to realize.However, inverse parallel Diode can introduce stray parameter in the loop, peak overvoltage be caused, and can increase the design difficulty of press mounting structure, non- The region GCT manufacture diode can then reduce the through-current capability of entire GCT chip, at the same also can lifting process realize the difficulty of process Degree, has larger impact to yield rate.

Utility model content

The technical problems such as reversed through-flow yield rate is low are realized for the reversed through-flow device easy to damage of the prior art, device, The utility model proposes a kind of devices for having reversed through-flow function.

A kind of device with reversed through-flow function, the device include: GCT chip module and drive circuit module, In, the GCT chip module includes: p⁺Emitter, n⁺Buffer layer, the base area n, the base area p, n⁺The five layer crystal brake tubes that emitter is constituted Structure, with the p⁺Emitter connection anode, the gate pole being connect with the base area p and with the n⁺The yin of emitter connection Pole；

The p⁺Emitter and the n⁺Undoped buffer layer；

There is high concentration p below the gate pole of the base area p⁺Doping；

The drive circuit module by cable in the GCT chip module cathode and gate pole be connected.

Further, the drive circuit module includes at least one of IGCT driving circuit or ETO driving circuit.

Further, the IGCT driving circuit includes: switching switch, DC power supply and trigger current source, the IGCT Driving circuit is by switch, the DC power supply and the trigger current source of switching in the cathode of the GCT chip module Four circuits are formed between gate pole, four circuits include:

The cathode is switched by the switching and is directly connected to the gate pole；

The cathode connects the anode of the DC power supply, the cathode connection of the DC power supply by the switching switch The gate pole；

The cathode connects the cathode in the trigger current source, the anode in the trigger current source by the switching switch Connect the gate pole；

It is switched by the switching and forms open circuit, the cathode can not be connected to the gate pole.

Further, the ETO driving circuit includes: the first low pressure MOSFET, the second low pressure MOSFET and trigger current Source, the ETO driving circuit pass through the first low pressure MOSFET, the second low pressure MOSFET and the trigger current source Two circuits are formed between the cathode and gate pole of the chip module, two circuits include:

The cathode connects the emitter-base bandgap grading of the first low pressure MOSFET, and the collector of the first low pressure MOSFET connects institute The cathode in trigger current source is stated, the anode in the trigger current source connects the gate pole；

The cathode connects the emitter-base bandgap grading of the first low pressure MOSFET, and the collector of the first low pressure MOSFET connects institute The collector of the second low pressure MOSFET is stated, the emitter-base bandgap grading of the second low pressure MOSFET connects the gate pole.

Further, the GCT chip module need to carry out Local lifetime control processing.

Further, anode, cathode and the gate pole of the GCT chip module are metal electrode.

Further, the metal electrode has the thickness of 5um to 30um.

Device described in the utility model passes through GCT chip module n⁺Buffer layer and p⁺Emitter adulterates and below gate pole Make high concentration p⁺Doping improves the characteristic of GCT chip；And the IGCT driving electricity being connected on GCT chip module by setting Road or ETO driving circuit keep formation between the cathode and gate pole of the GCT chip reversed through-flow, realization IGCT or ETO device Reversed through-flow function, and ensure that the device still has the performance of traditional IGCT or ETO device in forward conduction.Together When, device described in the utility model is not the case where changing original GCT structure and not influencing IGCT or ETO device normal function Under, realize the reversed through-flow of IGCT or ETO device, processing step is simple, improves industrial yield rate；For such as The applications such as converter can significantly reduce the complexity of system design, be realized using single power electronic devices higher Efficiency, lifting means global reliability.Other features and advantages of the utility model will illustrate in the following description, and And partly as will become apparent from the description, or and implementing the utility model understand.

Detailed description of the invention

In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is Some embodiments of the utility model, for those of ordinary skill in the art, without creative efforts, It is also possible to obtain other drawings based on these drawings.

Fig. 1 shows the structural schematic diagram of tradition GCT unit according to prior art；

Fig. 2 shows the structural schematic diagrams of the PN junction according to prior art；

Fig. 3 shows p below the gate region according to the GCT chip module of the utility model embodiment⁺Doping Schematic diagram；

Fig. 4 shows the structural representation of the IGCT device with reversed through-flow function according to the utility model embodiment Figure；

Fig. 5 shows the structural schematic diagram of the ETO device with reversed through-flow function according to the utility model embodiment.

Specific embodiment

It is practical new below in conjunction with this to keep the objectives, technical solutions, and advantages of the embodiments of the present invention clearer Attached drawing in type embodiment clearly and completely illustrates the technical scheme in the embodiment of the utility model, it is clear that retouched The embodiment stated is the utility model a part of the embodiment, instead of all the embodiments.Based on the implementation in the utility model Example, every other embodiment obtained by those of ordinary skill in the art without making creative efforts belong to The range of the utility model protection.

The utility model embodiment provides a kind of device with reversed through-current capability, and the device includes GCT chip Module and drive circuit module.The GCT chip module has p⁺Emitter, n⁺Buffer layer, the base area n, the base area p, n⁺Emitter The five layers of thyristor structure constituted, with the p⁺Emitter connection anode, the gate pole being connect with the base area p and with it is described n⁺The cathode of emitter connection, the GCT chip module are identical as the tradition structure of GCT unit shown in fig. 1；And described In GCT chip module, the p⁺Emitter and the n⁺Buffer layer constitutes in doped region and is provided with the first PN junction J1, the base area n It is provided with the second PN junction J2 in composition, is provided with third PN junction J3 in the base area p.The utility model embodiment is by the GCT The n of chip module⁺Buffer layer and p⁺Emitter is doped, so that the first PN junction J1 is under the situation of reversed small voltage, energy Reversible and uniform avalanche breakdown or punch-through breakdown enough occurs；And the GCT chip module is made below the gate pole of the base area p Work has high concentration p⁺Doped region, low-resistance characteristic when not only ensure that reversed through-flow, while the 3rd PN will not be influenced The breakdown characteristics for tying J3, as Fig. 3 is shown below the gate region according to the GCT chip module of the utility model embodiment p⁺The schematic diagram of doping.GCT chip module described in the utility model embodiment also needs to carry out Local lifetime control processing, thus Improve the dynamic characteristic of the GCT chip module.Such as: use 1-12MeV electron irradiation or proton irradiation to GCT chip interior Part-structure the minority carrier life time in GCT chip is reduced with this by introducing complex centre appropriate in GCT chip interior. Meanwhile anode, cathode and the gate pole of the GCT chip module are metal electrode, the metal electrode is made using metal, and The metal electrode has the thickness of 5um to 30um, and the metal electrode structure can guarantee the GCT chip module in big electricity There is stronger lateral through-current capability under stream situation.

The drive circuit module by cable in the GCT chip module cathode and gate pole be connected, it is practical newly Device described in type embodiment is capable of forming different routes by the drive circuit module, can not only guarantee the device just To through-flow function, and when current direction reverses, the reversed through-flow function of the device can be realized.The driving circuit mould Block includes IGCT driving circuit or ETO driving circuit, and the IGCT driving circuit and the GCT chip module connect and compose tool The IGCT device of standby reversed through-flow function, the ETO driving circuit connected and composed with the GCT chip module have it is reversely through-flow The ETO device of function.Wherein, Fig. 4 shows the IGCT device for having reversed through-flow function according to the utility model embodiment Structural schematic diagram.As shown, being connected with IGCT driving circuit, the IGCT on the GCT chip module of the IGCT device Driving circuit includes switching switch, DC power supply and trigger current source, and the IGCT driving circuit passes through switching switch, institute It states DC power supply and the trigger current source and forms four circuits between the cathode and gate pole of the GCT chip module.Into one Step ground, by the switching of the switching switch, the circuit that the IGCT driving circuit is capable of forming include: 1. cathodes with It is directly connected between the gate pole, forms short circuit；2. the cathode is connect with the anode of the DC power supply, the DC power supply Cathode connect with the gate pole, form forward direction through-flow access of the gate pole to cathode injection driving current；3. the cathode with The cathode in the trigger current source connects, and the anode in the trigger current source connect to form access with the gate pole；4. the yin It can not be connected between pole and the gate pole, form open circuit；Fig. 5 then shows reversed logical according to having for the utility model embodiment Flow the structural schematic diagram of the ETO device of function.As shown, connecting ETO driving electricity on the GCT chip module of the ETO device Road, the ETO driving circuit include the first low pressure MOSFET, the second low pressure MOSFET and trigger current source.The ETO driving electricity Road is by the first low pressure MOSFET, the second low pressure MOSFET and the trigger current source in the GCT chip module Cathode and gate pole between formed two circuits.Further, the circuit that the ETO driving circuit is capable of forming includes: 1. institutes The emitter-base bandgap grading for stating the first low pressure MOSFET is connect with the cathode, the collector and the trigger current of the first low pressure MOSFET The cathode in source connects, and the anode in the trigger current source connect to form access with the gate pole；2. the first low pressure MOSFET Emitter-base bandgap grading connect with the cathode, the collector of the collector of the first low pressure MOSFET and the second low pressure MOSFET connect It connects, the emitter-base bandgap grading of the second low pressure MOSFET is connect with the gate pole, and the forward direction for forming gate pole to cathode injection driving current is logical The short circuit of short time between the access or gate pole and cathode of stream.

In the circuit that above-mentioned IGCT driving circuit or ETO driving circuit are capable of forming, such as: the IGCT device is logical It crosses the IGCT driving circuit and forms the cathode of the GCT chip module and connect the cathode in the trigger current source, the triggering The anode of current source is connect with the gate pole, injects the reversed through-flow of driving current to be formed from the cathode to the gate pole Access or the ETO device by the cathode that the ETO driving circuit forms the GCT chip module connect described the The emitter-base bandgap grading of one low pressure MOSFET, the first low pressure MOSFET collector connect with the cathode in the trigger current source, be described The anode in trigger current source is connect with the gate pole, also forms reversed the leading to from the cathode to gate pole injection driving current The access of stream.After foring with reversed through-flow circuit, so that the IGCT device or the ETO device have reversed lead to Flow function.

IGCT driving circuit described in the utility model embodiment or the ETO driving circuit can identify anode current side To there are mainly three types of methods in identification anode current direction, comprising: 1. in driving plate by measuring door, cathode voltage, and leads to Cross the voltage and driving internal trigger state comprehensive descision；2. installing anode current sensor additional in driving plate directly to be surveyed Amount；3. measure positive cathode voltage in driving plate, with measure obtained voltage be according to the measurement for carrying out anode current direction and Judgement.The IGCT driving circuit or the ETO driving circuit are in the case where there is reversed through-flow unusual condition, additionally it is possible to short By the gate pole of the GCT chip and cathode short circuit in time, guarantee device not by abnormal through-flow damage.Illustratively, described IGCT driving circuit can form short circuit by switching switch between the cathode and gate pole of the GCT chip；Or it is described ETO driving circuit can form the short of short time by the second low pressure MOSFET between the cathode and gate pole of the GCT chip Road.Between the door cathode of the GCT chip form low impedance path by way of forming short circuit, from positive open position to When reversed open position conversion, conduction is participated in using the plasma in device GCT chip, to guarantee proper device operation.It is special Not, the IGCT driving circuit and the ETO driving circuit under electric situation, should be protected under gate-drive between gate pole and cathode Hold short-circuit condition, such as: the ETO driving circuit can by the parallel power electronic device on the second low pressure MOSFET or after Electric appliance etc. forms short circuit between the cathode and gate pole of the chip, thus reply be likely to occur abnormal reversed through-flow situation, Extend the working life of device.

Device described in the utility model embodiment passes through GCT chip module n⁺Buffer layer and p⁺Emitter adulterates and in door High concentration p is made below pole⁺Doping improves the characteristic of GCT chip；And the IGCT being connected on GCT chip module by setting Driving circuit or ETO driving circuit make to be formed reversed through-flow, realization IGCT or ETO between the cathode and gate pole of the GCT chip The reversed through-flow function of device, and ensure that the device still has the property of traditional IGCT or ETO device in forward conduction Energy.Meanwhile device described in the utility model embodiment is not changing original GCT structure and is not influencing IGCT or ETO device just In the case where Chang Gongneng, the reversed through-flow of IGCT or ETO device is realized, processing step is simple, improves industrial finished product Rate；For applications such as converters, the complexity of system design can be significantly reduced, single power electronic devices is utilized Realize higher efficiency, lifting means global reliability.Obviously, those skilled in the art can carry out the utility model each Spirit and scope of the kind modification and variation without departing from the utility model.If in this way, these modifications and change of the utility model Type belongs to the scope of the claims of the present invention and its equivalent technology, then the utility model is also intended to encompass these changes Including modification.

Claims (7)

1. a kind of device with reversed through-flow function, the device includes: GCT chip module and drive circuit module, wherein

The GCT chip module includes: p⁺Emitter, n⁺Buffer layer, the base area n, the base area p, n⁺The five layer crystal brake tubes that emitter is constituted Structure, with the p⁺Emitter connection anode, the gate pole being connect with the base area p and with the n⁺The yin of emitter connection Pole；

The p⁺Emitter and the n⁺Undoped buffer layer；

There is high concentration p below the gate pole of the base area p⁺Doping；

The drive circuit module by cable in the GCT chip module cathode and gate pole be connected.

2. device according to claim 1, which is characterized in that the drive circuit module include IGCT driving circuit or At least one of ETO driving circuit.

3. device according to claim 2, which is characterized in that the IGCT driving circuit includes: switching switch, direct current Source and trigger current source, the IGCT driving circuit pass through switching switch, the DC power supply and the trigger current source Four circuits are formed between the cathode and gate pole of the GCT chip module, four circuits include:

The cathode is switched by the switching and is directly connected to the gate pole；

The cathode switchs the anode for connecting the DC power supply by described switch, described in the cathode connection of the DC power supply Gate pole；

The cathode connects the cathode in the trigger current source, the anode connection in the trigger current source by the switching switch The gate pole；

It is switched by the switching and forms open circuit, the cathode can not be connected to the gate pole.

4. device according to claim 2, which is characterized in that the ETO driving circuit include: the first low pressure MOSFET, Second low pressure MOSFET and trigger current source, the ETO driving circuit pass through the first low pressure MOSFET, second low pressure MOSFET and the trigger current source form two circuits, two circuits between the cathode and gate pole of the chip module Include:

The cathode connects the emitter-base bandgap grading of the first low pressure MOSFET, and the collector of the first low pressure MOSFET connects the touching The cathode of current source is sent out, the anode in the trigger current source connects the gate pole；

The cathode connects the emitter-base bandgap grading of the first low pressure MOSFET, the collector connection of the first low pressure MOSFET described the The emitter-base bandgap grading of the collector of two low pressure MOSFET, the second low pressure MOSFET connects the gate pole.

5. device according to claim 1, which is characterized in that carried out at Local lifetime control to the GCT chip module Reason.

6. device according to claim 1, which is characterized in that anode, cathode and the gate pole of the GCT chip module be Metal electrode.

7. device according to claim 6, which is characterized in that the metal electrode has the thickness of 5um to 30um.