CN103606557A - Collector-electrode short-circuit IGBT structure integrating diode - Google Patents
Collector-electrode short-circuit IGBT structure integrating diode Download PDFInfo
- Publication number
- CN103606557A CN103606557A CN201310515887.3A CN201310515887A CN103606557A CN 103606557 A CN103606557 A CN 103606557A CN 201310515887 A CN201310515887 A CN 201310515887A CN 103606557 A CN103606557 A CN 103606557A
- Authority
- CN
- China
- Prior art keywords
- area
- diode
- collector
- electrode
- district
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001413 cellular effect Effects 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 8
- 230000004888 barrier function Effects 0.000 claims description 15
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 230000002265 prevention Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 11
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- 230000005611 electricity Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a collector-electrode short-circuit IGBT structure integrating a diode. The structure includes a cellular area (110) and a terminal area (111) surrounding the cellular area (110) and belongs to the technical field of power semiconductor devices, wherein the cellular area (110) includes an insulating layer (10), polycrystalline silicon gates (30), emitting-electrode metal (50), P-body areas (20), an emitting-electrode N+ area (40), an N- drift area (80), an collector-electrode P+ area (90) and a collector-electrode area (100). The terminal area (111) includes a main junction (21), field limiting rings (61), a channel cutoff ring (71), an N- drift area (81), an N+ collector-electrode short-circuit area (91), emitting-electrode metal (51), collector-electrode metal (101) and an insulating layer (11). The main junction (21), the N- drift area (81) and a collector-electrode N+ area (91) form an antiparallel PiN diode. The structure not only reduces the overall area and packaging cost of a device, but also improves the switching speed of the device and overcoming a reverse-blocking effect of traditional collector-electrode short circuits.
Description
Technical field
The present invention relates to semiconductor power device technology.
Background technology
Insulated gate bipolar transistor IGBT (Insulated-Gate Bipolar Transistor) is novel high power device, it combines the low on-resistance characteristic of bipolar transistor and the grid voltage control characteristic of MOSFET, utilize conductivity modulation effect to improve the situation that device withstand voltage and conducting resistance pin down mutually, the advantage such as there is high voltage, large electric current, high-frequency, power integration density is high, input impedance is large, conducting resistance is little, switching loss is low.Such characteristic and advantage allow IGBT obtain a wide range of applications in various fields such as frequency-conversion domestic electric appliances, new forms of energy and intelligent grids.
For traditional IGBT structure, because formed conductivity modulation effect is injected in the hole of collector electrode, the turn-off speed of device is slower.Therefore, in order to improve the switching speed of device, a kind of method is to adopt collector electrode short-circuit structure, and the IGBT of anode in short circuit structure as shown in Figure 1 adopts collector electrode short-circuit structure can when device turn-offs, pass through collector electrode N
+district extracts the turn-off time that electronics reduces device.Yet, due to collector electrode N
+the existence in district, makes device can have reverse blocking phenomenon, and this is because device is in MOSFET mode of operation while just having opened, and only has when electric current reaches certain value and makes collector electrode P
+district and N
-when this PN junction voltage of drift region reaches the voltage difference formation positively biased of 0.7V, device just can enter IGBT mode of operation, forms conductivity modulation effect.
The current conversion of traditional IGBT device when the application of a lot of fields all needs an anti-and diode to realize switch, this has just increased package area and the cost of diode and IGBT for producing.
Given this, need a kind of NDR phenomenon of can avoiding integrated again instead and the IGBT structure of diode.
Summary of the invention
Technical problem to be solved by this invention is, a kind of collecting electrode IGBT structure of integrated diode is provided, can avoid NDR phenomenon to improve again the switching speed of device, a diode also in parallel, in end, has been saved overall package area and production cost.
The technical scheme that technical problem of the present invention adopts is, a kind of collecting electrode IGBT structure of integrated diode, comprise cellular region (110) and be surrounded on the termination environment (111) of described cellular region (110), belong to power semiconductor technical field.Wherein cellular region (110) comprise insulating barrier (10), polysilicon gate (30), emitter metal (50), P-body district (20), emitter N
+district (40), N
-drift region (80), collector electrode P
+district (90) and collector area (100); Termination environment (111) comprises main knot (21), field limiting ring (61), channel cutoff ring (71), N
-drift region (81), N
+collector electrode shorting region (91), emitter metal (51), collector electrode metal (101) and insulating barrier (11).
Main knot (21), N
-drift region (81) and collector electrode N
+district (91) has formed PiN diode, becomes the anti-and diode of IGBT, and has overcome the reverse blocking effect of conventional collector short-circuit structure; Not only improve the switching speed of device but also IGBT and diode is integrated, reduced entire area and the packaging cost of device.N wherein
+collector area (91) is the collector area of whole terminal structure (111), and the current capacity size of this PiN diode is only adjusted by changing the area of main knot (21).
The invention has the beneficial effects as follows:
When device is just opened, the inversion channel of IGBT cellular forms, and when collector electrode (100 and 101) applies positive voltage, the electronic current in inversion channel is injected into N
-in (80,81), and by collector electrode N
+district (91) extracts, and now device is operated in MOS state, does not have electricity to lead modulation phenomenon.
When break-over of device, electric current incoming terminal collector electrode utmost point N
+the resistance that district (91) experiences is enough large, makes just can reach the voltage difference of 0.7V in minimum electric current, collector electrode utmost point P
+and N (90)
-drift region (80,81) forms positively biased.Collector electrode P
+(90) to N
-drift region (80,81) injected hole, forms conductivity modulation effect, makes device at very little electric current, just enter the mode of operation of IGBT, has reduced the on-state voltage drop of device, has suppressed NDR phenomenon.
At device, turn-off while carrying out change of current work, the electric current on circuit directly by IGBT terminal bodies by main knot (21), N
-drift region (81) and collector electrode utmost point N
+the PiN diode that district (91) forms carries out conducting, does not need in addition an anti-and diode again, has saved the area of whole IGBT module.
Below in conjunction with the drawings and specific embodiments, the present invention is further illustrated.
Accompanying drawing explanation
Fig. 1 is conventional collector electrode short circuit plane IGBT structure
Fig. 2 is conventional collector electrode short trench grid type IGBT structure
Fig. 3 is the collector electrode short circuit plane IGBT structure of a kind of integrated diode of the embodiment of the present invention one
Fig. 4 is the collector electrode short trench grid type IGBT structure of a kind of integrated diode of the embodiment of the present invention two
Fig. 5 is the collector electrode short circuit plane IGBT structure of a kind of integrated JBS/MPS diode of the embodiment of the present invention three
Fig. 6 is the collector electrode short trench grid type IGBT structure of a kind of integrated JBS/MPS diode of the embodiment of the present invention four.
Fig. 7 is the collector electrode short trench grid type IGBT structure of a kind of integrated groove-shaped diode of the embodiment of the present invention four.
Embodiment
Embodiment mono-
Referring to Fig. 3, be depicted as a kind of collector electrode short circuit plane IGBT structure of integrated diode, comprise cellular region (110) and be surrounded on the termination environment (111) of described cellular region (110), belong to power semiconductor technical field.Wherein cellular region (110) comprise insulating barrier (10), polysilicon gate (30), emitter metal (50), P-body district (20), emitter N
+district (40), N
-drift region (80), collector electrode P
+district (90) and collector area (100); Termination environment (111) comprises main knot (21), field limiting ring (61), channel cutoff ring (71), N
-drift region (81), N
+collector electrode shorting region (91), emitter metal (51), collector electrode metal (101) and insulating barrier (11).
The difference of structure shown in structure shown in Fig. 3 and Fig. 1 is the in different size of main junction area.The main junction area of Fig. 3 structure is wide enough so that the current capacity of integrated diode is enough large, and the main junction area of Fig. 1 structure is smaller.
When device is just opened, the inversion channel of IGBT cellular forms, and when collector electrode (100 and 101) applies positive voltage, the electronic current in inversion channel is injected into N
-in (80,81), and by collector electrode N
+collect in district (91), and now device is operated in MOS state, does not have electricity to lead modulation phenomenon.
When break-over of device, through overregulating the length of main knot (21), can reach the object of controlling diode current ability.Meanwhile, when device forward conduction, the channel electrons of cellular region is through drift region (80,81), the N at incoming terminal place
+(91) resistance that region experiences enough makes the collector electrode PN junction positively biased of cellular region.Now, collector electrode P
+(90) to N
-drift region (80,81) injected hole, forms conductivity modulation effect, and device just enters the mode of operation of IGBT at very little electric current like this, has reduced the on-state voltage drop of device, has suppressed NDR phenomenon.
Through overregulating the area of main knot (21), make by main knot (21), N
-drift region (81) and collector electrode N
+the current capacity of the PiN diode that district (91) forms is enough large.At device, turn-off while carrying out change of current work, the electric current on circuit directly by IGBT terminal bodies by main knot (21), N
-drift region (81) and collector electrode N
+the PiN diode that district (91) forms carries out conducting, does not need in addition an anti-and diode again, has saved the area of whole IGBT module, has namely reduced the package area of whole IGBT module, thereby has reduced production cost.
Embodiment bis-
Referring to Fig. 4, be depicted as a kind of collector electrode short trench grid type IGBT structure of integrated diode, comprise cellular region (110) and be surrounded on the termination environment (111) of described cellular region (110), belong to power semiconductor technical field.Wherein cellular region (110) comprise insulating barrier (10), polysilicon gate (30), emitter metal (50), P-body district (20), emitter N
+district (40), N
-drift region (80), collector electrode P
+district (90) and collector area (100); Termination environment (111) comprises main knot (21), field limiting ring (61), channel cutoff ring (71), N
-drift region (81), N
+anode in short circuit district (91), emitter metal (51), collector electrode metal (101) and insulating barrier (11).
The difference of structure shown in structure shown in Fig. 4 and Fig. 2 is the in different size of main junction area.The main junction area of Fig. 4 structure is wide enough so that the current capacity of integrated diode is enough large, and the main junction area of Fig. 1 structure is smaller.Structure shown in Fig. 4 is that from the difference of structure shown in Fig. 3 the structure of cellular is different, and structure shown in Fig. 4 is trench gate type, and structure shown in Fig. 3 is plane.
When device is just opened, the inversion channel of IGBT cellular forms, and when collector electrode (100 and 101) applies positive voltage, the electronic current in inversion channel is injected into N
-in (80,81), and by collector electrode N
+collect in district (91), and now device is operated in MOS state, does not have electricity to lead modulation phenomenon.
When break-over of device, through overregulating the length of main knot (21), can reach the object of controlling diode current ability.Meanwhile, when device forward conduction, the channel electrons of cellular region is through drift region (80,81), the N at incoming terminal place
+(91) resistance that region experiences enough makes the collector electrode PN junction positively biased of cellular region.Now, collector electrode P
+(90) to N
-drift region (80,81) injected hole, forms conductivity modulation effect, and device just enters the mode of operation of IGBT at very little electric current like this, has reduced the on-state voltage drop of device, has suppressed NDR phenomenon.
Through overregulating the area of main knot (21), make by main knot (21), N
-drift region (81) and collector electrode N
+the current capacity of the PiN diode that district (91) forms is enough large.At device, turn-off while carrying out change of current work, the electric current on circuit directly by IGBT terminal bodies by main knot (21), N
-drift region (81) and collector electrode N
+the PIN diode that district (91) forms is carried out conducting, does not need in addition an anti-and diode again, has saved the area of whole IGBT module, has namely reduced the package area of whole IGBT module, thereby has reduced production cost.
Embodiment tri-
Referring to Fig. 5, be depicted as a kind of collector electrode short circuit plane IGBT structure of integrated JBS/MPS diode, comprise cellular region (110) and be surrounded on the termination environment (111) of described cellular region (110), belong to power semiconductor technical field.Wherein cellular region (110) comprise insulating barrier (10), polysilicon gate (30), emitter metal (50), P-body district (20), emitter N
+district (40), N
-drift region (80), collector electrode P
+district (90) and termination environment, collector area (100) (111) comprise main knot (21), field limiting ring (61), channel cutoff ring (71), N
-drift region (81), N
+anode in short circuit district (91), emitter metal (51), collector electrode metal (101) and insulating barrier (11).
Structure shown in Fig. 5 is that from the difference of structure shown in Fig. 3 main junction structure is different, and formed integrated diode type is different.Fig. 3 structure adopts the main junction structure of P type, and in Fig. 5, adopt JBS structure, this structure is divided into several little rings by P equipotential ring, adopt the low metal of Schottky barrier, reduced forward voltage drop, and its reverse leakage current is because the screen effect of PN junction reduces, forward conduction characteristics is determined by Schottky contacts, and reverse blocking is determined by PN junction, so the diode component switching speed of this spline structure is very fast.Fig. 5 also can adopt the mode of operation of MPS, combines Schottky and the total mode of operation of PiN diode, can better compromise forward conduction voltage drop, puncture voltage and the relation between the turn-off time.JBS is applied in low-pressure system, and MPS can be applied in high-pressure system.
When device is just opened, the inversion channel of IGBT cellular forms, and when collector electrode (100 and 101) applies positive voltage, the electronic current in inversion channel is injected into N
-in (80,81), and by collector electrode N
+collect in district (91), and now device is operated in MOS state, does not have electricity to lead modulation phenomenon.
When break-over of device, through overregulating the length of main knot (21), can reach the object of controlling diode current ability.Meanwhile, when device forward conduction, the channel electrons of cellular region is through drift region (80,81), the N at incoming terminal place
+(91) resistance that region experiences enough makes the collector electrode PN junction positively biased of cellular region.Now, collector electrode P
+(90) to N
-drift region (80,81) injected hole, forms conductivity modulation effect, and device just enters the mode of operation of IGBT at very little electric current like this, has reduced the on-state voltage drop of device, has suppressed NDR phenomenon.
Through overregulating the area of main knot (21), make by main knot (21), N
-drift region (81) and collector electrode N
+the current capacity of the PiN diode that district (91) forms is enough large.At device, turn-off while carrying out change of current work, the electric current on circuit directly by IGBT terminal bodies by main knot (21), N
-drift region (81) and collector electrode N
+the PiN diode that district (91) forms carries out conducting, does not need in addition an anti-and diode again, has saved the area of whole IGBT module, has namely reduced the package area of whole IGBT module, thereby has reduced production cost.
Embodiment tetra-
Referring to Fig. 6, be depicted as a kind of collector electrode short trench grid type IGBT structure of integrated JBS/MPS diode, comprise cellular region (110) and be surrounded on the termination environment (111) of described cellular region (110), belong to power semiconductor technical field.Wherein cellular region (110) comprise insulating barrier (10), polysilicon gate (30), emitter metal (50), P-body district (20), emitter N
+district (40), N
-drift region (80), collector electrode P
+district (90) and collector area (100); Termination environment (111) comprises main knot (21), field limiting ring (61), channel cutoff ring (71), N
-drift region (81), N
+anode in short circuit district (91), emitter metal (51), collector electrode metal (101) and insulating barrier (11).
Structure shown in Fig. 6 is that from the difference of structure shown in Fig. 5 the structure of cellular is different, and structure shown in Fig. 6 is trench gate type, and structure shown in Fig. 5 is plane.
When break-over of device, through overregulating the length of main knot (21), can reach the object of controlling diode current ability.Meanwhile, when device forward conduction, the channel electrons of cellular region is through drift region (80,81), the N at incoming terminal place
+(91) resistance that region experiences enough makes the collector electrode PN junction positively biased of cellular region.Now, collector electrode P
+(90) to N
-drift region (80,81) injected hole, forms conductivity modulation effect, and device just enters the mode of operation of IGBT at very little electric current like this, has reduced the on-state voltage drop of device, has suppressed NDR phenomenon.
Through overregulating the area of main knot (21), make by main knot (21), N
-drift region (81) and collector electrode N
+the current capacity of the PiN diode that district (91) forms is enough large.At device, turn-off while carrying out change of current work, the electric current on circuit directly by IGBT terminal bodies by main knot (21), N
-drift region (81) and collector electrode N
+the PIN diode that district (91) forms is carried out conducting, does not need in addition an anti-and diode again, has saved the area of whole IGBT module, has namely reduced the package area of whole IGBT module, thereby has reduced production cost.
Embodiment five
Referring to Fig. 7, be depicted as a kind of collecting electrode IGBT structure with groove-shaped diode, comprise cellular region (110) and be surrounded on the termination environment (111) of described cellular region (110), belong to power semiconductor technical field.Wherein cellular region (110) comprise insulating barrier (10), polysilicon gate (30), emitter metal (50), P-body district (20), emitter N
+district (40), N
-drift region (80), collector electrode P
+district (90) and collector area (100); Termination environment (111) comprises main knot (21), field limiting ring (61), channel cutoff ring (71), N
-drift region (81), N
+anode in short circuit district (91), emitter metal (51), collector electrode metal (101) and insulating barrier (11).
The difference of structure shown in structure shown in Fig. 7 and Fig. 6 is that the integrated diode of Fig. 7 is with groove-shaped diode structure.
When break-over of device, through overregulating quantity and the width of main knot (21), can reach the object of controlling diode current ability.Meanwhile, when device forward conduction, the channel electrons of cellular region is through drift region (80,81), the N at incoming terminal place
+(91) resistance that region experiences enough makes the collector electrode PN junction positively biased of cellular region.Now, collector electrode P
+(90) to N
-drift region (80,81) injected hole, forms conductivity modulation effect, and device just enters the mode of operation of IGBT at very little electric current like this, has reduced the on-state voltage drop of device, has suppressed NDR phenomenon.When turn-offing, device is the effectively impact of pinch off electric field on main knot (21) and surface of channel bottom.
Claims (6)
1. a collecting electrode IGBT structure for integrated diode, comprises cellular region (110) and is surrounded on the termination environment (111) of described cellular region (110), belongs to power semiconductor technical field.Wherein cellular region (110) comprise insulating barrier (10), polysilicon gate (30), emitter metal (50), P-body district (20), emitter N
+district (40), N
-drift region (80), collector electrode P
+district (90) and collector area (100); Termination environment (111) comprises main knot (21), field limiting ring (61), channel cutoff ring (71), N
-drift region (81), N
+collector electrode shorting region (91), emitter metal (51), collector electrode metal (101) and insulating barrier (11), is characterized in that, the collector region of terminal part is all N
+district (91), wherein main knot (21), N
-drift region (81) and collector electrode N
+district (91) has formed inverse parallel PiN diode.
2. the collecting electrode IGBT structure of integrated diode as claimed in claim 1, is characterized in that, the width of the area of termination environment (111), main knot (21), length, the degree of depth can be adjusted according to device actual current ability characteristics.
3. the collecting electrode IGBT structure of integrated diode as claimed in claim 2, is characterized in that, by main knot (21), N
-drift region (81) and collector electrode N
+the anti-paralleled diode that district (91) forms can be PiN, can be also the structures such as MPS, JBS, groove-shaped (Trench Diode).
4. the collecting electrode IGBT structure of integrated diode as claimed in claim 3, it is characterized in that, the diode structure of its any one form can coordinate plane cellular, also can coordinate groove-shaped cellular, mentioned diode structure can with the structure combination in any of cellular region.
5. the collecting electrode IGBT structure of integrated diode as claimed in claim 4, is characterized in that, is applicable to the N channel device structure described in present case, is also applicable to the device architecture of the P raceway groove that doping type is contrary with present case.
6. the collecting electrode IGBT structure of integrated diode as claimed in claim 1, it is characterized in that, the integrated technology that present case is mentioned, be applicable to traditional NPT-IGBT structure, be applicable to all structures and the related application of NM relevant IGBT in a prevention type FS-IGBT structure and patent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310515887.3A CN103606557A (en) | 2013-10-25 | 2013-10-25 | Collector-electrode short-circuit IGBT structure integrating diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310515887.3A CN103606557A (en) | 2013-10-25 | 2013-10-25 | Collector-electrode short-circuit IGBT structure integrating diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103606557A true CN103606557A (en) | 2014-02-26 |
Family
ID=50124773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310515887.3A Pending CN103606557A (en) | 2013-10-25 | 2013-10-25 | Collector-electrode short-circuit IGBT structure integrating diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103606557A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112071905A (en) * | 2020-09-07 | 2020-12-11 | 上海陆芯电子科技有限公司 | Terminal structure of semiconductor device and insulated gate bipolar transistor |
| CN112289848A (en) * | 2020-10-29 | 2021-01-29 | 沈阳工业大学 | Low-power-consumption high-performance super junction JBS diode and manufacturing method thereof |
| CN116525656A (en) * | 2023-07-04 | 2023-08-01 | 四川奥库科技有限公司 | Reverse-conduction IGBT device with collector side containing floating space area |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050045960A1 (en) * | 2003-08-27 | 2005-03-03 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate transistor incorporating diode |
| US20100140658A1 (en) * | 2008-12-10 | 2010-06-10 | Denso Corporation | Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode |
| CN102832216A (en) * | 2011-06-15 | 2012-12-19 | 株式会社电装 | Semiconductor device including insulated gate bipolar transistor and diode |
-
2013
- 2013-10-25 CN CN201310515887.3A patent/CN103606557A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050045960A1 (en) * | 2003-08-27 | 2005-03-03 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate transistor incorporating diode |
| US20100140658A1 (en) * | 2008-12-10 | 2010-06-10 | Denso Corporation | Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode |
| CN102832216A (en) * | 2011-06-15 | 2012-12-19 | 株式会社电装 | Semiconductor device including insulated gate bipolar transistor and diode |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112071905A (en) * | 2020-09-07 | 2020-12-11 | 上海陆芯电子科技有限公司 | Terminal structure of semiconductor device and insulated gate bipolar transistor |
| CN112071905B (en) * | 2020-09-07 | 2021-05-25 | 上海陆芯电子科技有限公司 | Terminal structure of semiconductor device and insulated gate bipolar transistor |
| CN112289848A (en) * | 2020-10-29 | 2021-01-29 | 沈阳工业大学 | Low-power-consumption high-performance super junction JBS diode and manufacturing method thereof |
| CN116525656A (en) * | 2023-07-04 | 2023-08-01 | 四川奥库科技有限公司 | Reverse-conduction IGBT device with collector side containing floating space area |
| CN116525656B (en) * | 2023-07-04 | 2023-10-03 | 四川奥库科技有限公司 | Reverse-conduction IGBT device with collector side containing floating space area |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102779840B (en) | Insulated gate bipolar translator (IGBT) with terminal deep energy level impurity layer | |
| CN109427869B (en) | Semiconductor device with a plurality of transistors | |
| KR101613442B1 (en) | Insulating gate-type bipolar transistor | |
| CN104409519A (en) | Diode with floating island structure | |
| US11211485B2 (en) | Trench power transistor | |
| CN109830524B (en) | Super-junction power VDMOS with extremely low reverse recovery charge | |
| CN109755241B (en) | Power MOSFET device | |
| CN106024876B (en) | For eliminating the inverse conductivity type landscape insulation bar double-pole-type transistor device of hysteresis phenomenon | |
| US9263560B2 (en) | Power semiconductor device having reduced gate-collector capacitance | |
| CN102723363A (en) | VDMOS device and manufacturing method thereof | |
| CN103579230A (en) | Semiconductor power device | |
| CN109449202A (en) | One kind is inverse to lead bipolar junction transistor | |
| CN109755303B (en) | IGBT power device | |
| CN102709317B (en) | Low-threshold voltage diode | |
| CN109755311B (en) | Groove type power transistor | |
| CN103579231A (en) | Semiconductor power device | |
| CN204632762U (en) | Terminal layout structure for junction terminal extension and terminal structure thereof | |
| CN115832039A (en) | Reverse conducting IGBT device | |
| CN115425065A (en) | Silicon carbide IGBT device and manufacturing method thereof | |
| CN103855155A (en) | Three-mode integrated insulated gate bipolar transistor and forming method thereof | |
| CN110610986A (en) | RC-IGBT device integrating transverse freewheeling diode by using junction terminal | |
| CN103606557A (en) | Collector-electrode short-circuit IGBT structure integrating diode | |
| US20150144990A1 (en) | Power semiconductor device and method of manufacturing the same | |
| CN110504305B (en) | SOI-LIGBT device with self-biased pmos clamp carrier storage layer | |
| CN109904221B (en) | Super-junction bidirectional switch |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140226 |
|
| WD01 | Invention patent application deemed withdrawn after publication |