CN208608204U - High surge current ability silicon carbide diode - Google Patents
High surge current ability silicon carbide diode Download PDFInfo
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- CN208608204U CN208608204U CN201821397087.0U CN201821397087U CN208608204U CN 208608204 U CN208608204 U CN 208608204U CN 201821397087 U CN201821397087 U CN 201821397087U CN 208608204 U CN208608204 U CN 208608204U
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 107
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 105
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims description 35
- 238000000407 epitaxy Methods 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910003978 SiClx Inorganic materials 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 238000003763 carbonization Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 239000012535 impurity Substances 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 12
- 230000000903 blocking effect Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
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Abstract
The utility model belongs to the manufacturing technology field of semiconductor devices, it is related to a kind of high surge current ability silicon carbide diode, including semiconductor substrate, the semiconductor substrate includes N-type silicon carbide substrates and the N-type silicon carbide epitaxial layers in N-type silicon carbide substrates, top in the N-type silicon carbide epitaxial layers is equipped with several P type trap zones, below the P type trap zone or lower surface is equipped with N-type high resistance area, and the resistivity of the N-type high resistance area is greater than the resistivity of N-type silicon carbide epitaxial layers；The utility model is equipped with multiple blocky p type island regions by setting N-type high resistance area in N-type high resistance area, so that device under normally working condition, is added significantly to the surge current ability of device.
Description
Technical field
The utility model relates to a kind of diode, especially a kind of high surge current ability silicon carbide diode belongs to half
The manufacturing technology field of conductor device.
Background technique
Conversion provides effective approach between diversified forms electric energy to realize for power device and its module, builds in national defence
If, communications and transportation, industrial production, the fields such as health care are widely applied.From the first item power device fifties in last century
Since part is applied, the release of every generation power device all makes the energy more efficiently convert and use.
Conventional power devices and module are dominated by silicon-based power devices, mainly double with thyristor, power P IN device, power
Based on the devices such as pole junction device, power MOSFET and isolated-gate field effect transistor (IGFET), obtained in full power range
It is widely applied, the master of power semiconductor has been captured with its long history, very mature designing technique and technology
Lead market.However, increasingly maturation, its characteristic of silicon-based power devices with power semiconductor technologies development gradually approach its reason
By the limit.While researcher makes great efforts to seek more preferably parameter in the narrow optimization space of silicon-based power devices, it is also noted that
The third generations wide bandgap semiconductor materials such as SiC, GaN are excellent in the fields such as high-power, high-frequency, high temperature resistant, anti-radiation
Material property.
Silicon carbide (SiC) material becomes the research hotspot of power semiconductor in the world by its excellent performance.
Silicon carbide (SiC) has the advantages such as forbidden bandwidth is big, disruptive field intensity is high, thermal conductivity is high compared to traditional silicon materials.Forbidden bandwidth
The intrinsic carrier concentration of ambassador's silicon carbide is low, to reduce the reverse current of device；High disruptive field intensity can mention significantly
The breakdown reverse voltage of high-power component, and resistance when can reduce break-over of device；High heat conductance can greatly improve device
The maximum operating temperature that part can work；And in numerous high power applications occasions, such as: high-speed railway, hybrid vehicle,
The fields such as intelligent high-pressure direct current transportation, silicon carbidebased devices have been assigned very high expectation.Meanwhile silicon carbide power device energy
Power loss is enough effectively reduced, so being known as driving " green energy resource " device of " new energy revolution ".
Currently, silicon carbide power device pays attention to including diode and MOSFET.For silicon carbide diode, breakdown voltage,
Forward conduction voltage drop and junction capacity charge are its main electrical parameters, and surge current ability is its most important reliability ginseng
Number.Silicon carbide diode often uses junction barrier schottky diode (JBS) at present, is as shown in Figure 1 typical silicon carbide JBS
Structure, under device normally working condition (low current), only Schottky contact area is connected, and P type trap zone is not involved in
Conduction, therefore P type trap zone area is bigger, the conduction voltage drop of device is bigger under the conditions of same area, and conduction loss is bigger.Big
Under current condition (surge current comes interim), PN junction conducting injects few sub- hole to the drift region of device, to improve device
Surge current ability, therefore P type trap zone area is bigger, the surge current ability of device is stronger.However, due to the PN junction of silicon carbide
Diode cut-in voltage is higher, and surge current temporarily is difficult effectively to guarantee that PN junction is effectively opened, even if PN junction is opened, also often
It is excessively high to be commonly present device forward conduction voltage drop, causes chip temperature to rise very fast, easily fails, so as to cause silicon carbide power wave
It is poor to gush current capacity.On the other hand, if the area of JBS diode P type trap zone is significantly increased, device can effectively be improved
Surge current ability, but cause device forward conduction be lost it is larger, in systems apply when have to the transfer efficiency of electric energy
Detrimental effect.
So the silicon carbide JBS device that a kind of forward conduction voltage drop is smaller, surge current is big is needed, to overcome existing skill
Deficiency present in art.
Summary of the invention
The purpose of the utility model is to overcome the deficiencies in the prior art, propose a kind of high surge current ability carbon
SiClx diode and preparation method thereof, by below P type trap zone or lower surface increases a N-type high resistance area, and in N-type height
It hinders and is equipped with the discrete blocky p type island region in several intervals in area, so that device is added significantly to device under normally working condition
The surge current ability of part.
To realize the above technical purpose, the technical solution of the utility model is: a kind of high surge current ability silicon carbide two
Pole pipe, including semiconductor substrate, the semiconductor substrate include N-type silicon carbide substrates and the N-type in N-type silicon carbide substrates
Silicon carbide epitaxial layers, the top in the N-type silicon carbide epitaxial layers are equipped with several P type trap zones, which is characterized in that described
Below P type trap zone or lower surface is equipped with N-type high resistance area, and the resistivity of the N-type high resistance area is greater than the electricity of N-type silicon carbide epitaxial layers
Resistance rate.
Further, several evenly spaced blocky p type island regions are equipped in N-type high resistance area, and blocky p type island region is from N-type
High resistance area and P type trap zone intersection are extended in N-type high resistance area or are extended in N-type silicon carbide epitaxial layers across N-type high resistance area.
Further, the width of the blocky p type island region is not more than the thickness of N-type high resistance area.
Further, anode metal is equipped in the upper surface of the semiconductor substrate, outside the anode metal and the N-type
Prolong a layer Schottky contacts, with P type trap zone Ohmic contact；Cathodic metal, the yin are equipped in the lower surface of the semiconductor substrate
Pole metal and N-type silicon carbide substrates Ohmic contact.
Further, N-type well region is equipped between adjacent P type trap zone, the resistivity of the N-type well region is carbonized equal to N-type
The resistivity of silicon epitaxy layer or resistivity less than N-type silicon carbide epitaxial layers.
In order to further realize the above technical purpose, the utility model also proposes a kind of high surge current ability silicon carbide two
The manufacturing method of pole pipe, which comprises the following steps:
Step 1: choosing N-type silicon carbide substrates, using epitaxy technique, N-type is grown in the upper surface of N-type silicon carbide substrates
Silicon carbide epitaxial layers；
Step 2: under the blocking of the first photoresist, selective high-energy injecting p-type impurity, reselection low energy note
Enter p type impurity, then carry out high annealing, is respectively formed N-type high resistance area, P type trap zone；
Step 3: carrying out back thinning to N-type silicon carbide substrates lower surface, then deposited metal forms cathodic metal,
Anode metal is formed by deposit metal in N-type silicon carbide epitaxial layers upper surface, silicon carbide power diode is finally prepared
Device.
Further, after the step 2, using blocking for the second photoresist, Selective implantation p type impurity, then into
Row high annealing forms multiple blocky p type island regions being spaced apart in N-type high resistance area.
Further, the N-type high resistance area in the step 2 can also be obtained by epitaxy technique, specifically:
N-type resistive formation is grown in N-type silicon carbide epitaxial layers upper surface；
Under the blocking of the first photoresist, in N-type high resistant layer surface selectivity low energy injecting p-type impurity, removal first
Photoresist；
Under the blocking of third photoresist, in N-type high resistant layer surface Selective implantation N-type impurity, third photoresist is removed；
Then high annealing is carried out, P type trap zone, the N-type well region between P type trap zone are respectively formed and is located at P type trap zone
The N-type high resistance area of lower section.
Further, the N-type well region and the resistivity of N-type silicon carbide epitaxial layers are respectively less than the resistivity of N-type high resistance area,
The resistivity of the N-type well region is equal to the resistivity of N-type silicon carbide epitaxial layers or the resistivity less than N-type silicon carbide epitaxial layers.
Compared with Conventional silicon carbide diode part, the utility model is had the advantage that
1) the utility model is by below P type trap zone or lower surface increases a N-type high resistance area, as shown in figure 14,
Under the conditions of low current, electronic current flows into device inside from anode Schottky knot, N-type high resistance area is flowed through, then with about 45 degree
Angular cathode diffusion is flowed out, and the N-type high resistance area below P type trap zone has substantially no effect on the flowing of electronic current, therefore the structure is not
It will affect the forward conduction voltage drop of device；As shown in figure 15, under conditions of high current, quite a few electronic current will flows through
N-type high resistance area below P type trap zone, there are dead resistances in N-type high resistance area, therefore transverse direction can be generated in N-type high resistance area
Pressure drop causes the potential of P type trap zone central lower that can be substantially reduced, and the PN junction in device can be opened more effectively, realizes
Higher current capacity, so that device has higher surge current ability；
2) the utility model works as electronic current by being equipped with the discrete blocky p type island region in several intervals in N-type high resistance area
When flowing through N-type high resistance area, the setting of blocky p type island region can extend the circulation path of electronic current, increase below P type trap zone
Lateral resistance increases the surge current energy of device to guarantee that the PN junction in device under conditions of high current is more effectively opened
Power；
3) N-type well region is arranged in the utility model between P type trap zone, when the resistivity of N-type well region is less than the electricity of N-type epitaxy layer
Resistance rate, and when break-over of device, the conducting resistance of device can be substantially reduced.
Detailed description of the invention
Attached drawing is to be used to provide a further understanding of the present invention, and constitute part of specification, and following
Specific embodiment be used to explain the utility model together, but do not constitute limitations of the present invention.In the accompanying drawings:
Fig. 1 is the structural schematic diagram of existing SiC schottky diode.
Fig. 2 is the structural schematic diagram of 1 SiC schottky diode of the utility model embodiment.
Fig. 3 is the structural schematic diagram of 2 SiC schottky diode of the utility model embodiment.
Fig. 4 is the structural schematic diagram of 3 SiC schottky diode of the utility model embodiment.
Fig. 5 is the structure sectional view of the SiC schottky diode of the utility model embodiment 4.
Fig. 6 is structural schematic diagram of the utility model embodiment 5 with 4 blocky p type island region SiC schottky diodes.
Fig. 7 is that the utility model embodiment 2 forms N-type silicon carbide substrates and the sectional structure of N-type silicon carbide epitaxial layers shows
It is intended to.
Fig. 8 is the schematic cross-sectional view that the utility model embodiment 2 forms P type trap zone and N-type high resistance area.
Fig. 9 is the schematic cross-sectional view that the utility model embodiment 2 forms blocky p type island region.
Figure 10 is that the utility model embodiment 4 forms N-type substrate, N-type epitaxy layer and the signal of the sectional structure of N-type high resistance area
Figure.
Figure 11 is the schematic cross-sectional view that the utility model embodiment 4 forms P type trap zone.
Figure 12 is the schematic cross-sectional view that the utility model embodiment 4 forms N-type well region.
Figure 13 is the schematic cross-sectional view that the utility model embodiment 4 forms blocky p type island region.
Figure 14 is electronic current path profile of the utility model under the conditions of low current.
Figure 15 is the dead resistance schematic diagram in the high resistance area N of the utility model under conditions of high current.
Description of symbols: 1, cathodic metal；2, N-type silicon carbide substrates；3, N-type silicon carbide epitaxial layers；4, N-type high resistant
Area；5, blocky p type island region；6, P type trap zone；7, N-type well region；8, anode metal；9, N-type resistive formation.
Specific embodiment
Below with reference to specific drawings and examples, the utility model is described in further detail.
Specific embodiment of the present utility model is described in detail below in conjunction with attached drawing.It should be understood that herein
Described specific embodiment is only used for describing and explaining the present invention, and is not intended to limit the utility model.
Embodiment 1: as shown in Fig. 2, a kind of high surge current ability silicon carbide diode is provided, in the cross-wise direction of device
On, cathodic metal 1, N-type silicon carbide substrates 2, N-type silicon carbide epitaxial layers 3 and anode metal 8 are set gradually from bottom to top, in institute
It states and several P type trap zones 6 is set in N-type silicon carbide epitaxial layers 3, the anode metal 8 and 3 schottky junctions of N-type epitaxy layer
Touching, with 6 Ohmic contact of P type trap zone；
N-type high resistance area 4, the width and P type trap zone 6 of N-type high resistance area 4 are equipped in the lower section of the P type trap zone 6 or lower surface
It is of same size, the resistivity ratio N-type silicon carbide epitaxial layers 3 of the N-type high resistance area 4 are high；
Embodiment 2: as shown in figure 3, a kind of high surge current ability silicon carbide diode is provided, in the cross-wise direction of device
On, cathodic metal 1, N-type silicon carbide substrates 2, N-type silicon carbide epitaxial layers 3 and anode metal 8 are set gradually from bottom to top, in institute
It states and several P type trap zones 6 is set in N-type silicon carbide epitaxial layers 3, the anode metal 8 and 3 schottky junctions of N-type epitaxy layer
Touching, with 6 Ohmic contact of P type trap zone；
N-type high resistance area 4, the resistivity ratio N of the N-type high resistance area 4 are equipped in the lower section of the P type trap zone 6 or lower surface
Type silicon carbide epitaxial layers 3 are high；It is equipped with blocky p type island region 5 in 4 two sides of N-type high resistance area, the bulk p type island region 5 is carbonized with N-type
Silicon epitaxy layer 3 is adjacent, and the bottom of the bulk p type island region 5 passes through the N-type high resistance area 4 and extends in N-type epitaxy layer 3, and described piece
The width of shape p type island region 5 is less than or equal to the thickness of N-type high resistance area 4.
Embodiment 3: as shown in figure 4, a kind of high surge current ability silicon carbide diode is provided, in the cross-wise direction of device
On, cathodic metal 1, N-type silicon carbide substrates 2, N-type silicon carbide epitaxial layers 3 and anode metal 8 are set gradually from bottom to top, in institute
It states and several P type trap zones 6 is set in N-type silicon carbide epitaxial layers 3, the anode metal 8 and 3 schottky junctions of N-type epitaxy layer
Touching, with 6 Ohmic contact of P type trap zone；
N-type high resistance area 4, the width and P type trap zone 6 of N-type high resistance area 4 are equipped in the lower section of the P type trap zone 6 or lower surface
It is of same size, the resistivity ratio N-type silicon carbide epitaxial layers 3 of the N-type high resistance area 4 are high；
N-type well region 7 is set between the adjacent P type trap zone 6, and the N-type well region 7 and P type trap zone 6 are adjacent, and N-type
The resistivity of well region 7 is less than the resistivity of N-type silicon carbide epitaxial layers 3.
Embodiment 4: as shown in figure 5, the present embodiment is unlike the first embodiment, between the adjacent P type trap zone 6
N-type well region 7 is set, and the N-type well region 7 and P type trap zone 6 are adjacent, and the resistivity of N-type well region 7 is less than N-type silicon carbide epitaxial layers
3 resistivity；
It is equipped with blocky p type island region 5 in 4 two sides of N-type high resistance area, the bulk p type island region 5 and N-type silicon carbide epitaxial layers 3 are adjacent
It connects, the bottom of the bulk p type island region 5 passes through the N-type high resistance area 4 and extends in N-type epitaxy layer 3, the bulk p type island region 5
Width is less than or equal to the thickness of N-type high resistance area 4.
Embodiment 5: as shown in fig. 6, by taking a device cellular as an example, the present embodiment as different from Example 4, not only exists
Blocky p type island region 5 is arranged in 4 two sides of N-type high resistance area, and two blocky p type island regions 5, and blocky p-type are also uniformly arranged in N-type high resistance area 4
Successively break-through P type trap zone 6, N-type high resistance area 4 extend in N-type silicon carbide epitaxial layers 3 for the bottom in area 5；
Embodiment 5 illustrates that the utility model can also be come further by the number of increase device element blocky p type island region 5 intracellular
Extension electronic current circulation path, the lateral resistance of the lower section of P type trap zone 6 is increased, to guarantee under conditions of high current
PN junction in device is more effectively opened, and increases the surge current ability of device, the number of blocky p type island region 5 can be according to practical device
Depending on part design current size.
The production method of high surge current ability silicon carbide diode in the utility model embodiment 2, specific production step
It is rapid as follows:
As shown in fig. 7, step 1: N-type silicon carbide substrates 2 are chosen, using epitaxy technique, in the upper of N-type silicon carbide substrates 2
Surface grows N-type silicon carbide epitaxial layers 3；
As shown in figure 8, step 2: under the blocking of the first photoresist, selective high-energy implanted with p-type impurity is used for shape
At N-type high resistance area 4, reselection low energy injecting p-type impurity is used to form P type trap zone 6, then removes the first photoresist, this
In first time injecting p-type impurity (formed N-type high resistance area 4) less than second injecting p-type impurity of dosage (forming P type trap zone 6)
Dosage, and twice injection sequence it is replaceable；
As shown in figure 9, third step；Under the blocking of the second photoresist, the p type impurity of Selective implantation high-energy is used for
Blocky p type island region 5 is formed, high annealing is then carried out, forms P type trap zone 6, positioned at the N-type high resistance area 4 and position of 6 lower section of P type trap zone
In the blocky p type island region 5 of 4 two sides of N-type high resistance area；
N-type high resistance area 4 in the utility model embodiment 2 can also be obtained by epitaxy technique, specifically:
As shown in Figure 10, N-type resistive formation 9 is grown in 3 upper surface of N-type silicon carbide epitaxial layers；
As shown in figure 11, miscellaneous in 9 surface selectivity low energy injecting p-type of N-type resistive formation under the blocking of the first photoresist
Matter is used to form P type trap zone 6, removes the first photoresist；
As shown in figure 12, under the blocking of third photoresist, N-type impurity is injected on 9 surface of N-type resistive formation, removes third
Photoresist；
Then high annealing is carried out, P type trap zone 6 and the N-type high resistance area 4 below P type trap zone 6 are formed, simultaneously because N
The injection of type impurity, so that the resistivity of the resistivity of the N-type resistive formation 9 between adjacent P type trap zone 6 and N-type silicon carbide epitaxial layers 3
Identical (i.e. resistivity of the resistivity of N-type well region 7 equal to N-type silicon carbide epitaxial layers 3)；
The resistivity of N-type resistive formation 9 is identical as the resistivity of N-type high resistance area 4 in the present embodiment, the resistance of N-type high resistance area 4
Rate is greater than the resistivity of N-type silicon carbide epitaxial layers 3；
Blocky 5 bottom of p type island region passes through N-type high resistance area 4 and extends in N-type silicon carbide epitaxial layers 3 in the present embodiment, and blocky
The width of p type island region 5 is less than the thickness of N-type high resistance area 4；
As shown in figure 3, step 4: device back is carried out it is thinned, and device lower surface deposited metal formed cathode
Metal 1, the cathodic metal 1 and 2 Ohmic contact of N-type silicon carbide substrates form anode metal in device upper surface deposit metal
8, the anode metal 8 finally prepares carbon with 6 Ohmic contact of P type trap zone with 3 Schottky contacts of N-type silicon carbide epitaxial layers
SiClx power diode device.
The production method of high surge current ability silicon carbide diode in the utility model embodiment 4, specific production step
It is rapid as follows:
As shown in Figure 10, step 1: N-type silicon carbide substrates 2 are chosen, using epitaxy technique, in N-type silicon carbide substrates 2
Upper surface grows N-type silicon carbide epitaxial layers 3, arrives N-type resistive formation 9 what the upper surface of N-type silicon carbide epitaxial layers 3 was grown；
As shown in figure 11, step 2: under the blocking of the first photoresist, in 9 surface Selective implantation p-type of N-type resistive formation
Impurity, the step for be to remove the first photoresist to form P type trap zone 6；
As shown in figure 12, step 3: under the blocking of third photoresist, N-type impurity is injected on 9 surface of N-type resistive formation, this
One step is to remove third photoresist to form N-type well region 7；
The resistivity of N-type high resistance area 4 is identical as the resistivity of N-type resistive formation 9 in the present embodiment, the resistivity of N-type well region 7
Less than the resistivity of N-type silicon carbide epitaxial layers 3, the resistivity of N-type silicon carbide epitaxial layers 3 is less than the resistivity of N-type high resistance area 4；
As shown in figure 13, the 4th step；Under the blocking of the second photoresist, Selective implantation p type impurity, the step for be for
Blocky p type island region 5 is formed, high annealing is then carried out, forms P type trap zone 6, positioned at the N-type high resistance area of 6 lower surface of P type trap zone
4, the N-type well region 7 between P type trap zone 6 and the blocky p type island region 5 positioned at 4 two sides of N-type high resistance area；
The resistivity of N-type resistive formation 9 is identical as the resistivity of N-type high resistance area 4 in the present embodiment, the resistance of N-type high resistance area 4
Rate is greater than the resistivity of N-type silicon carbide epitaxial layers 3, N-type well region 7, and the resistivity of N-type well region 7 is less than N-type silicon carbide epitaxial layers
3 resistivity；
Blocky 5 bottom of p type island region passes through N-type high resistance area 4 and extends in N-type silicon carbide epitaxial layers 3 in the present embodiment, and blocky
The width of p type island region 5 is less than the thickness of N-type high resistance area 4；
As shown in figure 5, step 5: device back is carried out it is thinned, and device lower surface deposited metal formed cathode
Metal 1, the cathodic metal 1 and 2 Ohmic contact of N-type silicon carbide substrates form anode metal in device upper surface deposit metal
8, the anode metal 8 finally prepares silicon carbide power with 6 Ohmic contact of P type trap zone with 7 Schottky contacts of N-type well region
Diode component.
When the utility model device pressure resistance, P type trap zone 6 is capable of the surface field of discrete devices, improves device pressure resistance；?
Break-over of device moment, electric current can first pass through from the position of Schottky contacts, while have electric current to flow through N-type high resistance area 4, this makes P
The pressure difference for the PN junction that type well region 6 and N-type high resistance area 4 form increases, and when pressure difference reaches 3V, PN junction is opened and to N-type silicon carbide
Epitaxial layer 3 injects hole, at this time device thoroughly forward conduction.
The utility model and embodiments thereof are described above, description is not limiting, shown in the drawings
It also is one of the embodiments of the present invention, practical structures are not limited thereto.All in all if this field it is common
Technical staff is enlightened by it, without deviating from the purpose of the present invention, is not inventively designed and the skill
The similar frame mode of art scheme and embodiment, all should belong to the protection range of the utility model.
Claims (5)
1. a kind of high surge current ability silicon carbide diode, including semiconductor substrate, the semiconductor substrate includes N-type carbonization
Silicon substrate and the N-type silicon carbide epitaxial layers in N-type silicon carbide substrates, the top in the N-type silicon carbide epitaxial layers are set
There are several P type trap zones, which is characterized in that below the P type trap zone or lower surface is equipped with N-type high resistance area, the N-type high resistant
The resistivity in area is greater than the resistivity of N-type silicon carbide epitaxial layers.
2. a kind of high surge current ability silicon carbide diode according to claim 1, it is characterised in that: in N-type high resistant
Several evenly spaced blocky p type island regions are equipped in area, and blocky p type island region is extended to from N-type high resistance area and P type trap zone intersection
It is extended in N-type silicon carbide epitaxial layers in N-type high resistance area or across N-type high resistance area.
3. a kind of high surge current ability silicon carbide diode according to claim 2, it is characterised in that: the bulk P
The width in type area is not more than the thickness of N-type high resistance area.
4. a kind of high surge current ability silicon carbide diode according to claim 1, it is characterised in that: partly led described
The upper surface of structure base board is equipped with anode metal, the anode metal and the N-type epitaxy layer Schottky contacts, with P type trap zone Europe
Nurse contact；It is equipped with cathodic metal in the lower surface of the semiconductor substrate, the cathodic metal connects with N-type silicon carbide substrates ohm
Touching.
5. a kind of high surge current ability silicon carbide diode according to claim 1, it is characterised in that: in adjacent P
N-type well region is equipped between type well region, the resistivity of the N-type well region is equal to the resistivity of N-type silicon carbide epitaxial layers or is less than N-type carbon
The resistivity of SiClx epitaxial layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821397087.0U CN208608204U (en) | 2018-08-29 | 2018-08-29 | High surge current ability silicon carbide diode |
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| CN201821397087.0U CN208608204U (en) | 2018-08-29 | 2018-08-29 | High surge current ability silicon carbide diode |
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| CN (1) | CN208608204U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020042221A1 (en) * | 2018-08-29 | 2020-03-05 | 无锡新洁能股份有限公司 | Silicon carbide diode having high surge current capability and manufacturing method thereof |
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2018
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020042221A1 (en) * | 2018-08-29 | 2020-03-05 | 无锡新洁能股份有限公司 | Silicon carbide diode having high surge current capability and manufacturing method thereof |
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