CN208706654U - A kind of SiC power device terminal - Google Patents
A kind of SiC power device terminal Download PDFInfo
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- CN208706654U CN208706654U CN201821482781.2U CN201821482781U CN208706654U CN 208706654 U CN208706654 U CN 208706654U CN 201821482781 U CN201821482781 U CN 201821482781U CN 208706654 U CN208706654 U CN 208706654U
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Abstract
The utility model relates to technical field of semiconductors, specifically disclose a kind of SiC power device terminal, wherein, the SiC power device terminal includes: the cathode metal layer set gradually from bottom to top, first conductivity type substrate layer and the first conductive type epitaxial layer, the second discrete conduction type field limiting ring of multiple intervals is provided on first conductive type epitaxial layer, the second discrete conduction type well region of multiple intervals is provided on first conductive type epitaxial layer, the second conduction type well region is arranged alternately with the second conduction type field limiting ring, passivation layer is set on the second conduction type well region and the second conduction type field limiting ring.SiC power device terminal provided by the utility model has high reliablity and can be improved the advantage of product qualification rate.
Description
Technical field
The utility model relates to technical field of semiconductors more particularly to a kind of SiC power device terminals.
Background technique
Conversion provides effective approach between diversified forms electric energy to realize for power device and its module, builds in national defence
If, communications and transportation, industrial production, the fields such as health care are widely applied.From the first item power device fifties in last century
Since part is applied, the release of every generation power device all makes the energy more efficiently convert and use.Therefore, power device
Further to develop, must just be effectively reduced conducting resistance.
Conventional power devices and module are dominated by Si base power device, mainly double with thyristor, power P IN device, power
Based on the devices such as pole junction device, power MOSFET and isolated-gate field effect transistor (IGFET), obtained in full power range
It is widely applied, the master of power semiconductor has been captured with its long history, very mature designing technique and technology
Lead market.However, conducting resistance is limited by breakdown voltage and there are a limit --- be referred to as " the silicon limit " (Silicon
Limit), can not reduce again.Studies have shown that being led for ideal N-channel power MOS (i.e. Ron only considers drift layer resistance RD)
The relationship for resistance and the breakdown voltage of being powered are as follows:
As deep space exploration, Deep Oil And Gas Exploration exploration, extra-high voltage can be converted, express locomotive driving and nuclear energy exploitation etc. are extreme
Application demand under environment, Si base power device oneself be unable to satisfy high power, high frequency and high temperature etc. requirement.Using device it is in parallel or
Series Package can realize the demand of high voltage and high current, but thus bring device reliability be deteriorated meeting so that system failure
Rate increases.In addition, the biggish conducting resistance of Si base power device has been greatly reduced the energy conversion efficiency of system.
While researcher makes great efforts to seek more preferably parameter in the narrow optimization space of silicon-based power devices, it is also noted that
The third generations wide bandgap semiconductor materials such as SiC, GaN are excellent in the fields such as high-power, high-frequency, high temperature resistant, anti-radiation
Material property.
Silicon carbide (SiC) material becomes the research hotspot of power semiconductor in the world by its excellent performance.
Silicon carbide (SiC) has the advantages such as forbidden bandwidth is big, disruptive field intensity is high, thermal conductivity is high compared to traditional silicon materials.Forbidden bandwidth
The intrinsic carrier concentration of ambassador's silicon carbide is low, to reduce the reverse current of device；High disruptive field intensity can mention significantly
The breakdown reverse voltage of high-power component, and resistance when can reduce break-over of device；High heat conductance can greatly improve device
The maximum operating temperature that part can work；And in numerous high power applications occasions, such as: high-speed railway, hybrid vehicle,
The fields such as intelligent high-pressure direct current transportation, silicon carbidebased devices have been assigned very high expectation.Meanwhile silicon carbide power device energy
Power loss is enough effectively reduced, so being known as driving " green energy resource " device of " new energy revolution ".
Currently, silicon carbide power device mainly includes diode and MOSFET.For silicon carbide diode, breakdown voltage,
Reliability is its main measurement index.Silicon carbide diode terminal structure often uses field limiting ring technology at present, normal in device
Under artesian condition, depletion region increases, and when crossing field limiting ring, and field limiting ring will undertake the main voltage tied, and required pressure resistance is higher,
Field limiting ring quantity is more, and the area of occupancy is also bigger.Also, the injection to surface of SiC can generate the bad of injection ion diffusion
Effect leads to terminal structure effect sharp fall, it is difficult to meet the requirement of device.On this basis, the shakiness of current process
It is qualitative, so that injection effect deviation is occurred from reaching ideal situation, the qualification rate of actual production is caused to reduce.
Therefore, the SiC power device terminal of product qualification rate can be improved by needing a kind of high reliability, to overcome existing skill
Deficiency present in art.
Summary of the invention
The utility model aims to solve at least one of the technical problems existing in the prior art, provides a kind of SiC power device
Part terminal and a kind of production method of SiC power device terminal, to solve the problems of the prior art.
As the one aspect of the utility model, a kind of SiC power device terminal is provided, wherein the SiC power device
Terminal includes: the cathode metal layer set gradually from bottom to top, the first conductivity type substrate layer and the first conductive type epitaxial layer,
The second discrete conduction type field limiting ring of multiple intervals, first conductive-type are provided on first conductive type epitaxial layer
The second discrete conduction type well region of multiple intervals, the second conduction type well region and described second are provided on type epitaxial layer
Conduction type field limiting ring is arranged alternately, and passivation is arranged on the second conduction type well region and the second conduction type field limiting ring
Layer.
Preferably, the depth of the second conduction type well region is greater than the depth of the second conduction type field limiting ring.
Preferably, the impurity concentration of the second conduction type well region is lower than the impurity of the second conduction type field limiting ring
Concentration.
Preferably, the second conduction type well region and the second conduction type field limiting ring lap region are arranged.
Preferably, the second conduction type well region is separated and is disposed adjacent with the second conduction type field limiting ring.
Preferably, oxide protective layer is arranged in the upper surface of first conductive type epitaxial layer.
Preferably, SiC power device includes N-type SiC power device and p-type SiC power device, when the SiC power device
When part is N-type power device, first conduction type is N-type, and second conduction type is p-type, when the SiC power device
When part is p-type SiC power device, first conduction type is p-type, and second conduction type is N-type.
SiC power device terminal provided by the utility model, in the second conduction type field limiting ring interval or the second conductive-type
Several the second conduction type well regions are increased in type field limiting ring, in pressure-resistant situation, the second conduction type well region plays adjustment
The effect of field distribution, under same homalographic, the field limiting ring structure after adjusting electric field can share more voltages, also, the
The injection of one impurity concentration and the second impurity concentration to surface of SiC, resulting injection ion spread ill effect, can be mutual
It is doped to inside the second conduction type well region and the second conduction type field limiting ring, eliminates thus bring unstability.Thus,
SiC power device terminal provided by the utility model has high reliablity and can be improved the advantage of product qualification rate.
Detailed description of the invention
Attached drawing is to be used to provide a further understanding of the present invention, and constitute part of specification, and following
Specific embodiment be used to explain the utility model together, but do not constitute limitations of the present invention.In the accompanying drawings:
Fig. 1 is a kind of structural schematic diagram of SiC power device terminal provided by the utility model.
Fig. 2 is another structural schematic diagram of SiC power device terminal provided by the utility model.
Fig. 3 is that the first conductivity type substrate provided by the utility model, the first conductivity type substrate epitaxial layer and oxidation are protected
The schematic cross-sectional view of sheath.
Fig. 4 is the schematic cross-sectional view of the second conduction type well region provided by the utility model.
Fig. 5 is that the second conduction type well region provided by the utility model and the second conduction type field limiting ring partly overlap setting
Schematic cross-sectional view.
Fig. 6 is the second conduction type well region provided by the utility model and the separation of the second conduction type field limiting ring and adjacent sets
The schematic cross-sectional view set.
Fig. 7 is the production method flow chart of SiC power device terminal provided by the utility model.
Specific embodiment
Specific embodiment of the present utility model is described in detail below in conjunction with attached drawing.It should be understood that herein
Described specific embodiment is only used for describing and explaining the present invention, and is not intended to limit the utility model.
As the first aspect of the utility model, a kind of SiC power device terminal is provided, wherein as shown in Figure 1, institute
Stating SiC power device terminal includes: the cathode metal layer 1 set gradually from bottom to top, the first conductivity type substrate layer 2 and first
Conductive type epitaxial layer 3 is provided with discrete the second conduction type field limit in multiple intervals on first conductive type epitaxial layer 3
Ring 5 is provided with the second discrete conduction type well region 4 of multiple intervals on first conductive type epitaxial layer 3, and described second leads
Electric type well region 4 is arranged alternately with the second conduction type field limiting ring 5, the second conduction type well region 4 and described second
Passivation layer 7 is set on conduction type field limiting ring 5.
SiC power device terminal provided by the utility model, in the second conduction type field limiting ring interval or the second conductive-type
Several the second conduction type well regions are increased in type field limiting ring, in pressure-resistant situation, the second conduction type well region plays adjustment
The effect of field distribution, under same homalographic, the field limiting ring structure after adjusting electric field can share more voltages, also, the
The injection of one impurity concentration and the second impurity concentration to surface of SiC, resulting injection ion spread ill effect, can be mutual
It is doped to inside the second conduction type well region and the second conduction type field limiting ring, eliminates thus bring unstability.Thus,
SiC power device terminal provided by the utility model has high reliablity and can be improved the advantage of product qualification rate.
Specifically, as shown in Figure 1, the depth of the second conduction type well region 4 is limited greater than second conduction type field
The depth of ring 5.
Specifically, the impurity concentration of the second conduction type well region 4 is miscellaneous lower than the second conduction type field limiting ring 5
Matter concentration.
As a kind of specifically embodiment, as shown in Figure 1, the second conduction type well region 4 and second conduction
The setting of 5 lap region of type field limiting ring.
As another specifically embodiment, as shown in Fig. 2, the second conduction type well region 4 is led with described second
Electric type field limiting ring 5 is separated and is disposed adjacent.
It should be understood that Fig. 1 and Fig. 2 is two kinds of tools of the second conduction type well region 4 and the second conduction type field limiting ring 5
The embodiment of body, no matter the second conduction type well region 4 is overlapped or is separated with the second conduction type field limiting ring 5
And be disposed adjacent, the second conduction type well region 4 can play the role of adjusting field distribution.
Specifically, as shown in figure 3, oxide protective layer 6 is arranged in the upper surface of first conductive type epitaxial layer 3.
Preferably, SiC power device includes N-type SiC power device and p-type SiC power device, when the SiC power device
When part is N-type power device, first conduction type is N-type, and second conduction type is p-type, when the SiC power device
When part is p-type SiC power device, first conduction type is p-type, and second conduction type is N-type.
It should be noted that the specific embodiment of SiC power device provided by the utility model is with the first conduction type
For N-type, the second conduction type is to illustrate for p-type.
As the second aspect of the utility model, a kind of production method of SiC power device terminal is provided, wherein such as
Shown in Fig. 7, the production method of the SiC power device terminal includes:
S110, the first conductivity type substrate is provided, in first conductivity type substrate outside one conduction type of growth regulation
Prolong layer；
S120, one layer of protection oxide layer is deposited in the upper surface of first conductive type epitaxial layer；
S130, the first photoresist is deposited in the upper surface of the protection oxide layer, then selectivity is conductive described first
Second the first concentration of impurities of conduction type is injected in type epitaxial layer, and the second conduction type well region is formed according to photoetching process；
S140, the second photoresist is deposited in the upper surface of the protection oxide layer, then selectivity is conductive described first
Second the second concentration of impurities of conduction type is injected in type epitaxial layer, and the second conduction type field limiting ring is formed according to photoetching process；
S150, the lower surface deposited metal formation cathode metal layer in first conductivity type substrate；
S160, pass through etching deposit passivation layer, obtained SiC power device terminal in the upper surface of the protection oxide layer.
The production method of SiC power device terminal provided by the utility model, at the second conduction type field limiting ring interval or
Several the second conduction type well regions, in pressure-resistant situation, the second conductive type of trap are increased in second conduction type field limiting ring
Area plays the role of adjusting field distribution, and under same homalographic, the field limiting ring structure after adjusting electric field can share more electricity
Pressure, also, the injection of the first impurity concentration and the second impurity concentration to surface of SiC, resulting injection ion diffusion are bad
Effect can be doped to mutually inside the second conduction type well region and the second conduction type field limiting ring, eliminate thus that bring is not
Stability.
Preferably, the photoetching site portion of the photoetching position of second photoresist and first photoresist overlapping is set
It sets.
Preferably, it the photoetching position of second photoresist and the separation of the photoetching position of first photoresist and adjacent sets
It sets.
Specific implementation below with reference to Fig. 1 to Fig. 6 to the production method of SiC power device terminal provided by the utility model
Process is described in detail.The specific embodiment of the production method of SiC power device terminal using the first conduction type as N-type,
Second conduction type be p-type for illustrate.
As a kind of specifically embodiment, as shown in figure 3, using epitaxy technique, in the upper table of silicon carbide N type substrate 2
Wheat flour obtains silicon carbide N type epitaxial layer 3, and one layer of protection oxide layer 6 is then deposited on silicon carbide N type epitaxial layer 3；
As shown in figure 4, after using photoetching process, selective high-energy injecting p-type impurity, the step for be to form P
Type well region 4, specific width and spacing can be adjusted according to specific example, in this example, doping concentration be 2E17~
6E17, deep 0.5~1um；
As shown in figure 5, reuse photoetching process, selective low energy injecting p-type impurity, the step for be to be formed
P-type field limiting ring 5, the step for photoetching position and the P type trap zone 4 partly overlap, specific overlap length and duty length can
To be adjusted according to specific example, in this example, the overlap length used is 2um, and doping concentration is 3E17~8E17, so
After carry out high annealing, form P type trap zone 4 and p-type field limiting ring 5；
As shown in Figure 1, being thinned by back and forming cathodic metal 1 in device lower surface deposited metal, then in device
Part upper surface forms passivation layer 7 by the way that etching is redeposited, finally prepares SiC power diode terminal.
As another specifically embodiment, as shown in figure 3, using epitaxy technique, in the upper of silicon carbide N type substrate 2
Silicon carbide N type epitaxial layer 3 is made in surface, and one layer of protection oxide layer 6 is then deposited on silicon carbide N type epitaxial layer 3；
As shown in figure 4, after using photoetching process, selective high-energy injecting p-type impurity, the step for be to form P
Type well region 4, specific width and spacing can be adjusted according to specific example, in this example, doping concentration be 2E17~
6E17, deep 0.5~1um；
As shown in fig. 6, reuse photoetching process, selective low energy injecting p-type impurity, the step for be to be formed
P-type field limiting ring 5, the step for photoetching position and previous step be separated from each other, specific width can be adjusted according to specific example,
In this example, then the doping concentration used carries out high annealing for 2E17~8E17, forms P type trap zone 4 and p-type field
Limit ring 5；
As shown in Fig. 2, being thinned by back and forming cathodic metal 1 in device lower surface deposited metal, then in device
Part upper surface forms passivation layer 7 by the way that etching is redeposited, finally prepares SiC power diode terminal.
It should be noted that having used photoetching process to form P type trap zone 4 and p-type field limiting ring 5, it is possible to understand that
, as shown in Figure 4 and Figure 5, to form the first photoresist 8 that P type trap zone 4 uses, Fig. 6 is to form the use of p-type field limiting ring 5
The second photoresist 9 arrived, it will also be appreciated that not due to the P type trap zone 4 of formation and the position of p-type field limiting ring 5 and depth
Identical, therefore, the photoetching position and photoetching time etc. of the first photoresist 8 and the second photoresist 9 are had any different.
SiC power device terminal made from the production method of SiC power device terminal provided by the utility model, is carrying out
When pressure-resistant, P type trap zone can effectively change surface electric field distribution, improve the utilization rate of field limiting ring, improve under same homalographic
Device pressure resistance；And P type trap zone can be adjusted effectively in p-type field limiting ring manufacturing process, be spread caused by injecting ion in SiC
Situation improves the reliability of terminal；The double implantation structure of P type trap zone and p-type field limiting ring, improves terminal to the fault-tolerant of technique
Rate.
Therefore, SiC power device terminal provided by the utility model, by original p-type field limiting ring interval or p-type field limit
Several P type trap zones are increased in ring, in pressure-resistant situation, P type trap zone plays the role of adjusting field distribution, in same homalographic
Under, the field limiting ring structure after adjusting electric field can share more voltages.Also, the first impurity concentration and the second impurity concentration pair
The injection of surface of SiC, resulting injection ion spread ill effect, can be doped to mutually in P type trap zone and p-type field limiting ring
Portion eliminates thus bring unstability.
The production method of SiC power device terminal provided by the utility model, adjusts by using the mode injected twice,
It solves in the prior art since the situation that deviation causes effect unstable occurs in injection effect, P type trap zone implantation concentration is too low
When, P type trap zone failure has p-type field limiting ring to play partial pressure；When p-type field limiting ring implantation concentration is too low, the failure of p-type field limiting ring, by
P type trap zone plays the role of the partial pressure of field limiting ring.In addition, the structure of SiC power device terminal can as made from the production method
It is used in silicon carbide diode and MOSFET structure.
It is understood that embodiment of above is merely to illustrate that the principles of the present invention and uses exemplary
Embodiment, however the utility model is not limited thereto.For those skilled in the art, this is not being departed from
In the case where the spirit and essence of utility model, various changes and modifications can be made therein, these variations and modifications are also considered as this reality
With novel protection scope.
Claims (7)
1. a kind of SiC power device terminal, which is characterized in that the SiC power device terminal includes: to set gradually from bottom to top
Cathode metal layer (1), the first conductivity type substrate layer (2) and the first conductive type epitaxial layer (3), first conduction type
The second discrete conduction type field limiting ring (5) of multiple intervals, first conductive type epitaxial layer are provided on epitaxial layer (3)
(3) it is provided with discrete the second conduction type well region (4) in multiple intervals on, the second conduction type well region (4) and described the
Two conduction type field limiting rings (5) are arranged alternately, the second conduction type well region (4) and the second conduction type field limiting ring
(5) passivation layer (7) are set on.
2. SiC power device terminal according to claim 1, which is characterized in that the second conduction type well region (4)
Depth is greater than the depth of the second conduction type field limiting ring (5).
3. SiC power device terminal according to claim 1, which is characterized in that the second conduction type well region (4)
Impurity concentration is lower than the impurity concentration of the second conduction type field limiting ring (5).
4. SiC power device terminal according to claim 1, which is characterized in that the second conduction type well region (4) with
Second conduction type field limiting ring (5) the lap region setting.
5. SiC power device terminal according to claim 1, which is characterized in that the second conduction type well region (4) with
The second conduction type field limiting ring (5) separates and is disposed adjacent.
6. SiC power device terminal as claimed in any of claims 1 to 5, which is characterized in that described first is conductive
Oxide protective layer (6) are arranged in the upper surface of type epitaxial layer (3).
7. SiC power device terminal as claimed in any of claims 1 to 5, which is characterized in that SiC power device
Including N-type SiC power device and p-type SiC power device, when the SiC power device is N-type power device, described first
Conduction type is N-type, and second conduction type is p-type, described when the SiC power device is p-type SiC power device
First conduction type is p-type, and second conduction type is N-type.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821482781.2U CN208706654U (en) | 2018-09-11 | 2018-09-11 | A kind of SiC power device terminal |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821482781.2U CN208706654U (en) | 2018-09-11 | 2018-09-11 | A kind of SiC power device terminal |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109087940A (en) * | 2018-09-11 | 2018-12-25 | 无锡新洁能股份有限公司 | A kind of SiC power device terminal and preparation method thereof |
| CN110931360A (en) * | 2019-10-25 | 2020-03-27 | 江苏东晨电子科技有限公司 | Preparation method of power device with terminal protection structure |
-
2018
- 2018-09-11 CN CN201821482781.2U patent/CN208706654U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109087940A (en) * | 2018-09-11 | 2018-12-25 | 无锡新洁能股份有限公司 | A kind of SiC power device terminal and preparation method thereof |
| CN110931360A (en) * | 2019-10-25 | 2020-03-27 | 江苏东晨电子科技有限公司 | Preparation method of power device with terminal protection structure |
| CN110931360B (en) * | 2019-10-25 | 2023-11-24 | 江苏东晨电子科技有限公司 | Preparation method of power device with terminal protection structure |
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