JPS60240147A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS60240147A
JPS60240147A JP9601684A JP9601684A JPS60240147A JP S60240147 A JPS60240147 A JP S60240147A JP 9601684 A JP9601684 A JP 9601684A JP 9601684 A JP9601684 A JP 9601684A JP S60240147 A JPS60240147 A JP S60240147A
Authority
JP
Japan
Prior art keywords
grooves
lead
metal terminals
electrode surface
moisture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9601684A
Other languages
Japanese (ja)
Inventor
Masanobu Shin
新　政信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9601684A priority Critical patent/JPS60240147A/en
Publication of JPS60240147A publication Critical patent/JPS60240147A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To prevent the disengagement of a lead wire and to improve reliability, by providing grooves in the vicinity of the end parts of the glass coating of metal terminals. CONSTITUTION:A plurality of grooves 9 are provided at metal terminals 8a and 8b, which are connected to the cathode electrode surface and the anode electrode surface of a mesa type semiconductor rectifying pellet 1 having a P-N junction. Therefore, even though a glass coating material 3 is etched slightly, infiltration of moisture and the like from the outside is extremely less owing to the thickness of the plating at the grooves 9. Even though the moisture and the like are infiltrated, the protruded parts of the grooves 9 serve the role of a stopper, and verdigris at a close contact part 7 of the metal terminal 8a and a lead 4 can be prevented. Therefore, breakdown of the lead and the like are eliminated.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は、半導体整流ペレットの両端電極面に金属端子
を接続し、ガラス被覆材料で被覆してなる半導体装置に
関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a semiconductor device in which metal terminals are connected to electrode surfaces at both ends of a semiconductor rectifier pellet, and the pellet is coated with a glass coating material.

（従来技術） 従来のガラス被覆型の高電圧半導体装置、例えば整流器
は、第１図ｆａ）に示す様に、ＰＮ接合を有ド電極面と
アノード電極面にそれぞれ接続された金属端子２および
２′と、これを共に被覆したガラス被蝋材料３と外部リ
ード４及び４′すらびにリードの保護膜としてＮｉメッ
キ又はａｎメッキ、の５及び５′とからできている。(Prior Art) A conventional glass-coated high-voltage semiconductor device, for example, a rectifier, has a PN junction and has metal terminals 2 and 2 connected to a cathode surface and an anode electrode surface, respectively, as shown in FIG. 5 and 5', a glass brazing material 3 coated with the same, external leads 4 and 4', and Ni plating or ann plating as a protective film for the leads.

しかしながら、従来の半導体装置では、リードの保護膜
としてＮｉ又は、ａｎ　５　ｔ　５’をメッキする際、
ガラス被覆材も、酸によシ同時にエツチングされる為、
第１図（ａ）の拡大図ｆｂ）Ｋ示すように、ガラス３と
メッキ５，５′との接触部６が、他の部分に比ベメッキ
厚は、薄くなってしまう。その為、信頼度試験たとえば
、高温・高湿試験等を行なうと、ガラス３とメッキ５，
５′との接触部６より水分等が浸透しゃすくなシ、金属
端子２及び１ルート４が、緑青し、長時間後には、金属
端子２とリード４の浴接部７よりリード線４が取れると
いう欠点があった。特に、海岸近くで半導体整流装置を
使用した場合にはこのような欠点が顕著でおる。However, in conventional semiconductor devices, when plating Ni or an 5 t 5' as a protective film for the leads,
Since the glass coating material is also etched by the acid,
As shown in the enlarged view fb)K of FIG. 1(a), the contact portion 6 between the glass 3 and the plating 5, 5' has a thinner plating thickness than other portions. Therefore, when performing reliability tests, such as high temperature and high humidity tests, glass 3 and plating 5,
5', the metal terminals 2 and 1 route 4 turn green and the lead wire 4 comes off from the bath contact area 7 between the metal terminal 2 and the lead 4 after a long period of time. There was a drawback. This drawback is particularly noticeable when semiconductor rectifiers are used near the coast.

（発明の解決しようとする問題点） 従って、本発明の目的は、上述のガラス被柵材　□とメ
ッキとの接触部からの水分等の浸透を防止し、リード線
のはずれをなくシ、信頼性を大幅に向上した半導体装置
を提供することにある。(Problems to be Solved by the Invention) Therefore, an object of the present invention is to prevent penetration of moisture etc. from the contact area between the above-mentioned glass fence material □ and the plating, eliminate the disconnection of the lead wire, and improve reliability. The object of the present invention is to provide a semiconductor device with significantly improved performance.

（問題点を解決するための手段） 本発明の半導体装置は、半導体ベレットの両端電極面に
金属端子を接続し、ガラス被覆してなるものであシ、か
つ、この金属端子のガラス被覆の端部近傍に溝をもうけ
てなる構成を有する。(Means for Solving the Problems) The semiconductor device of the present invention is formed by connecting metal terminals to electrode surfaces at both ends of a semiconductor pellet and covering the glass-covered ends of the metal terminals. It has a structure in which a groove is provided near the part.

（実施例） つぎに、本発明を実施例によシ説明する。(Example) Next, the present invention will be explained using examples.

第２図ｆａ）は、本発明の一実施例の断面図であシ、同
図（ｂ）は、その拡大図である。ＰＮ接合を有するメサ
型の半導体整流ベレッ）１のカソード電極面およびアノ
ード電極面にそれぞれ接続された金属端子８ａおよび８
ｂには拡大図である第２図（ｂ）に示すように、複数の
溝９がもうけられているため、溝９のメッキ厚により、
ガラス被覆材３が多少エツチングされても外部からの水
分等の浸透はきわめて少ない。たとえ、水分等が浸透し
た場合でも、溝９の凸部が水分等のストッパーとなシ、
金属端子８ａとリード４の溶接部７の緑青は防止できる
。FIG. 2fa) is a sectional view of one embodiment of the present invention, and FIG. 2(b) is an enlarged view thereof. Metal terminals 8a and 8 are respectively connected to the cathode electrode surface and the anode electrode surface of the mesa-type semiconductor rectifier bellet 1 having a PN junction.
As shown in FIG. 2(b), which is an enlarged view, there are a plurality of grooves 9 in b, so depending on the plating thickness of the grooves 9,
Even if the glass covering material 3 is etched to some extent, penetration of moisture etc. from the outside is extremely small. Even if moisture etc. penetrates, the convex part of the groove 9 will not act as a stopper for moisture etc.
It is possible to prevent patina on the welded portion 7 between the metal terminal 8a and the lead 4.

このため従来から問題になっているリード折れ等は無く
なる。This eliminates lead breakage, which has been a problem in the past.

このように、本発明の半導体装置は、金属端子に、はぼ
均一に金属保護膜が、メッキされる効果と、金属端子の
溝によるストッパー効果とにより、外部からの水分や塩
分等の浸透はＩ丘とんどなくなるため、長胡使用状態に
おいても、リードの引張強度及び折曲げる強度の低下も
なく信頼性の高い半導体装置が得られる。As described above, the semiconductor device of the present invention prevents moisture, salt, etc. from penetrating from the outside due to the effect that the metal terminals are plated with a metal protective film almost uniformly and the stopper effect of the grooves in the metal terminals. Since there are almost no I-hills, a highly reliable semiconductor device can be obtained without any decrease in the tensile strength and bending strength of the leads even when used in a long-hulled state.

【図面の簡単な説明】[Brief explanation of drawings]

第１図（ａ）は、従来の高圧整流器の一例を示す断面図
、同図（ｂ）は同図（ａ）の拡大図、第２図（ａ）は、
本発明の一実施例を示す断面図、同図（ｂ）は、その拡
大図でおる。 １・・・・・・半導体整流ペレット、１２’、８ａｌｂ
・・・・・・金属端子、３・・・・・・被覆ガラス、４
，４′・・・・・・外部リード、５．５′・・・・・・
金属保護膜、６，６′・・・・・・金属保護膜とガラス
の接触部、７・・・・・・リード溶接部、９・・・・・
・金属端子溝。FIG. 1(a) is a cross-sectional view showing an example of a conventional high-voltage rectifier, FIG. 1(b) is an enlarged view of FIG. 1(a), and FIG. 2(a) is
A cross-sectional view showing one embodiment of the present invention, FIG. 3(b) is an enlarged view thereof. 1... Semiconductor rectifier pellet, 12', 8alb
...Metal terminal, 3...Coated glass, 4
, 4'...External lead, 5.5'...
Metal protective film, 6, 6'...Contact area between metal protective film and glass, 7...Lead welding area, 9...
・Metal terminal groove.

Claims (1)

【特許請求の範囲】[Claims] 半導体ペレットの両端電極面に金属端子を接続し、ガラ
ス被覆した半導体装置において、前記金属端子の前記電
極面側の先端に溝をもうけたことを特徴とする半導体装
置。1. A semiconductor device in which metal terminals are connected to electrode surfaces at both ends of a semiconductor pellet and covered with glass, characterized in that a groove is provided at the tip of the metal terminal on the electrode surface side.
JP9601684A 1984-05-14 1984-05-14 Semiconductor device Pending JPS60240147A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9601684A JPS60240147A (en) 1984-05-14 1984-05-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9601684A JPS60240147A (en) 1984-05-14 1984-05-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS60240147A true JPS60240147A (en) 1985-11-29

Family

ID=14153439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9601684A Pending JPS60240147A (en) 1984-05-14 1984-05-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS60240147A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105006491A (en) * 2015-08-07 2015-10-28 南通明芯微电子有限公司 Point contact type rectifier diode
CN105023954A (en) * 2015-08-07 2015-11-04 南通明芯微电子有限公司 Surface contact rectifying diode
CN105023955A (en) * 2015-08-07 2015-11-04 南通明芯微电子有限公司 Planar rectification diode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105006491A (en) * 2015-08-07 2015-10-28 南通明芯微电子有限公司 Point contact type rectifier diode
CN105023954A (en) * 2015-08-07 2015-11-04 南通明芯微电子有限公司 Surface contact rectifying diode
CN105023955A (en) * 2015-08-07 2015-11-04 南通明芯微电子有限公司 Planar rectification diode

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