JP3614738B2 - Resin-sealed semiconductor device - Google Patents

Resin-sealed semiconductor device Download PDF

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Publication number
JP3614738B2
JP3614738B2 JP32793499A JP32793499A JP3614738B2 JP 3614738 B2 JP3614738 B2 JP 3614738B2 JP 32793499 A JP32793499 A JP 32793499A JP 32793499 A JP32793499 A JP 32793499A JP 3614738 B2 JP3614738 B2 JP 3614738B2
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Prior art keywords
resin
lead
semiconductor device
encapsulated semiconductor
leads
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JP2001144241A (en
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和彦 梅田
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Mitsui High Tech Inc
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Mitsui High Tech Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a small-size and thin-type resin-sealed semiconductor device which has no failure such as a resin peel off, lead drop-out, or the like, and which is superior in reliability. SOLUTION: A resin-sealed semiconductor device 10 has an element-mounting part 11 for mounting a semiconductor chip 22; a plurality of leads 12 provided in a periphery of the element mounting part 11, and a bonding wire 24 for electrically connecting an electrode pad 23 of the semiconductor chip 22 with a wire bonding part 19 formed at a top end part of the lead 12, and these are sealed with a resin so as to expose at least a bottom face of the lead 12. In this device 10, bent projection members 20, 21, which are cut into a sealing resin for putting-in, are provided at a position rearward of the wire bonding part 19 in the lead 12.

Description

【０００１】
【発明の属する技術分野】
本発明は、小型化及び薄型化のために、リードフレームの片面が樹脂封止されていないで露出した樹脂封止型半導体装置に関する。
【０００２】
【従来の技術】
半導体装置の小型化、薄型化を図り、且つ低コスト化を目的としてリードフレームを用いてチップサイズに近似したサイズの樹脂封止型半導体装置が使用されている。この樹脂封止型半導体装置は薄型化するために、半導体チップとこの半導体チップとリードとの電気的接続を図るボンディングワイヤが設けられたリードフレームの一面側のみを樹脂封止することが多い。また、リードフレームの他面側も樹脂封止を施したとしても、外部接続端子を形成するためにリードの一部分は露出させている。
【０００３】
【発明が解決しようとする課題】
しかしながら、前記樹脂封止型半導体装置においては、リードと封止樹脂との密着強度が低いので、製造中又は使用中においてリードが封止樹脂から抜け出る場合があり、また信頼性を損なっている。
そこで、前記リードの抜け防止策として、リードをハーフエッチングして部分的に薄肉箇所を形成し、樹脂との密着性を高めた半導体装置が提案されている。ところが、この半導体装置においては一応の効果はあるが、薄型化した半導体装置においては、全体が多少の屈曲性を有するので、十分とは言えず、樹脂剥離やリード抜けが生じる。また、このような半導体装置においては、リードをハーフエッチングするために、リードに厚みを必要（例えば、２ｍｍ以上）とし、半導体装置の薄型化が困難となるだけでなく、半導体装置の生産性が低いという問題がある。
本発明はかかる事情に鑑みてなされたもので、樹脂剥離やリード抜け等の不良がなく、信頼性に優れた小型で薄型の樹脂封止型半導体装置を提供することを目的とする。
【０００４】
【課題を解決するための手段】
前記目的に沿う本発明に係る樹脂封止型半導体装置は、半導体チップを搭載した素子搭載部と、該素子搭載部の周囲に設けられた複数のリードと、前記半導体チップの電極パッドと前記リードの先端部に形成されているワイヤボンディング部を電気的に接続するボンディングワイヤとを有し、これらは少なくとも前記リードの底面を露出させて封止樹脂によって被覆されている樹脂封止型半導体装置において、
前記リードには、前記封止樹脂に食い込み嵌入する屈曲した突出片が、前記ワイヤボンディング部より後方位置に設けられ、
しかも、前記突出片は前記リードの両側に形成され、該突出片の高さは隣り合う前記リードの間隔と同一か又は短く形成され、更に、隣り合う前記リードの前記突出片の形成位置は該リードの長手方向に場所を変えて形成され、隣り合う前記リードの前記突出片が重複しないようになっている。
【０００５】
このように、本発明に係る樹脂封止型半導体装置においては、リードの一部に形成された屈曲した突出片が封止樹脂に食い込み嵌入しているので、リードが封止樹脂中にアンカーされた状態となって強固に固定される。
本発明に係る樹脂封止型半導体装置において、前記突出片は、前記リードの一部に幅方向両側に突出して形成された拡幅部を封止樹脂側に根元又は中間部から折り曲げて形成してもよい。
【０００６】
【発明の実施の形態】
続いて、添付した図面を参照しつつ、本発明を具体化した実施の形態につき説明し、本発明の理解に供する。
ここに、図１は本発明の一実施の形態に係る樹脂封止型半導体装置の断面図、図２は製造過程中にある同樹脂封止型半導体装置に使用するリードフレームの平面図、図３（Ａ）は同樹脂封止型半導体装置のリードの一部拡大斜視図、図３（Ｂ）は同リードの断面図である。図４（Ａ）、（Ｂ）は他の実施の形態に係る樹脂封止型半導体装置のリードの一部拡大斜視図である。
【０００７】
図１に示すように、本発明の一実施の形態に係る樹脂封止型半導体装置１０は、中央部に素子搭載部１１をその周囲に複数のリード１２を備えたリードフレーム１３を備えている。
このリードフレーム１３は銅又は鉄或いはニッケル合金を主体とする金属材料からなって、図２に示すように、製造過程にあっては、周囲に枠体１４を備え、中央の素子搭載部１１は支持リード１５〜１８を介して周囲の枠体１４に支持されている。枠体１４の内側には複数のリード１２が中央の素子搭載部１１とは分離された状態で設けられている。各リード１２の内側先端部には、貴金属めっきが形成されたワイヤボンディング部１９を備えている。
【０００８】
各リード１２のワイヤボンディング部１９の後方位置（即ち、枠体１４側）には、その幅方向に突び出した対となる突出片２０、２１が設けられている。この突出片は２０、２１は図３（Ａ）に示すようにリード１２の途中位置の両側に拡幅部を形成し、この幅方向両側に突出して形成された拡幅部をリード１２の側縁部（根元部）又はその途中位置で上方（封止樹脂側）に折り曲げている。なお、突出片２０、２１の高さは、隣り合うリード１２の間隔と同程度かあるいは少し短い程度となっている。そして、隣合うリード１２の突出片２０、２１の形成位置はリード１２の長手方向に場所を変えて形成され、隣り合うリード１２の突出片２０、２１が重複しないようになっている。このように隣り合う突出片２０、２１の位置をリードの長さ方向に変えることによって、一枚の条材から最大の屈曲高さを有する突出片２０、２１を形成することができる。突出片２０、２１の折り曲げ角度θは、リード１２の面に対して直角であっても良いが、図３（Ｂ）に示すように、折り曲げ角度θを例えば９５〜１３５度又は４５〜８５度とすることによって、樹脂封止された場合に抜けにくくなる。
【０００９】
このリードフレーム１３を使用した半導体装置１０を図１を参照しながら説明する。
中央の素子搭載部１１の上には半導体チップ２２が接着剤を介して搭載されている。この半導体チップ２２の各電極パッド２３と各リード１２の先端部に形成されたワイヤボンディング部１９とはボンディングワイヤ２４によってそれぞれ電気的に連結されている。そして、半導体チップ２２、各ボンディングワイヤ２４及び底面を除くリードフレーム１３の主要部は封止樹脂２５によって樹脂封止されている。この場合、封止樹脂２５の外部にある枠体１４及びこれに連続するリード１２の外側端部が最終的に除去された樹脂封止型半導体装置１０が形成される。
【００１０】
この樹脂封止型半導体装置１０において、各リード１２の中間位置に形成された屈曲した突出片２０、２１は封止樹脂２５に嵌入しているので、各リード１２は封止樹脂２５に強固に固定されていることになる。従って、仮にこの薄型の樹脂封止型半導体装置１０自体に曲げ応力がかかっても、従来の樹脂封止型半導体装置と異なり、リード１２が樹脂から外れたりすることがない。
【００１１】
続いて、図４（Ａ）、（Ｂ）を参照しながら、本発明の他の実施の形態に係る樹脂封止型半導体装置について説明するが、前記した樹脂封止型半導体装置１０と異なる部分はリード２７、２８及びこれに形成される突出片２９、３０のみであるので、この部分のみについて説明する。
図４（Ａ）に示す樹脂封止型半導体装置のリード２７においては、リード２７のワイヤボンディング部より後方に貫通孔３１が形成され、この貫通孔３１の側周部が屈曲され封止樹脂側に飛び出て（即ち、折り曲げられて）突出片２９がバーリング加工等によって形成されている。
また、図４（Ｂ）に示す樹脂封止型半導体装置のリード２８においては、角型の貫通孔３２が形成され、この貫通孔３２の部分連結切り抜き片が封止樹脂方向に折り曲げられて突出片３０が形成されている。
【００１２】
このように、封止樹脂側に食い込み嵌入する屈曲した突出片２９、３０をリード２７、２８に設けることによって、リード２７、２８が封止樹脂に固定されて、リード抜けや樹脂剥離が生じにくい構造となる。
この突出片２９、３０はリードに対して複数形成することも可能であり、これによって更にリードと封止樹脂との接合強度が向上する。
【００１３】
なお、前記した突出片２０、２１、２９、３０の形成はエッチングではなくプレス加工によって行えるので、樹脂封止型半導体装置の生産性が向上する。
本発明に係る樹脂封止型半導体装置は以上の実施の形態に限定されるものではなく、例えば、前記突出片をリードの幅方向内側に形成してもよい。また、前記突出片を形成する前の拡幅部をリードの長手方向に対して角度をもって形成し、この拡幅部をリードの側縁部分又はその近傍を基準として折り曲げることもでき、これによって、更に樹脂との食い込みがよくなる。
【００１４】
【発明の効果】
請求項１、２に記載の樹脂封止型半導体装置は、以上の説明からも明らかなように、リードには、樹脂封止に食い込み嵌入する屈曲した突出片が、ワイヤボンディング部より後方位置に設けられているので、リードと封止樹脂の接合性が向上し、リード抜けや樹脂剥離を生じにくい信頼性に優れた小型、薄型の樹脂封止型半導体装置を提供できる。
そして、このような突出片はプレス加工によって形成でき、エッチング加工が不要であるので、樹脂封止型半導体装置の生産性が向上する。
特に、請求項２に記載の樹脂封止型半導体装置においては、前記突出片は、リードの一部に幅方向両側に突出して形成された拡幅部を封止樹脂側に折り曲げて形成されているので、リードの通電面積が確保されて、幅の狭いリードの樹脂封止型半導体装置にでも好適に適用可能である。
【図面の簡単な説明】
【図１】本発明の一実施の形態に係る樹脂封止型半導体装置の断面図である。
【図２】製造過程中にある同樹脂封止型半導体装置に使用するリードフレームの平面図である。
【図３】（Ａ）は同樹脂封止型半導体装置のリードの一部拡大斜視図、（Ｂ）は同リードの断面図である。
【図４】（Ａ）、（Ｂ）は他の実施の形態に係る樹脂封止型半導体装置のリードの一部拡大斜視図である。
【符号の説明】
１０：樹脂封止型半導体装置、１１：素子搭載部、１２：リード、１３：リードフレーム、１４：枠体、１５〜１８：支持リード、１９：ワイヤボンディング部、２０、２１：突出片、２２：半導体チップ、２３：電極パッド、２４：ボンディングワイヤ、２５：封止樹脂、２７、２８：リード、２９、３０：突出片、３１、３２：貫通孔[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a resin-encapsulated semiconductor device in which one side of a lead frame is exposed without being resin-encapsulated for miniaturization and thickness reduction.
[0002]
[Prior art]
2. Description of the Related Art Resin-encapsulated semiconductor devices having a size approximate to the chip size using a lead frame are used for the purpose of reducing the size and thickness of the semiconductor device and reducing the cost. In order to reduce the thickness of this resin-encapsulated semiconductor device, it is often the case that only one surface side of a lead frame provided with a semiconductor chip and a bonding wire for electrical connection between the semiconductor chip and a lead is resin-encapsulated. Even if the other side of the lead frame is sealed with resin, a part of the lead is exposed in order to form the external connection terminal.
[0003]
[Problems to be solved by the invention]
However, since the adhesion strength between the lead and the sealing resin is low in the resin-encapsulated semiconductor device, the lead may come out of the sealing resin during manufacture or use, and the reliability is impaired.
Therefore, as a measure for preventing the lead from coming off, there has been proposed a semiconductor device in which the lead is half-etched to partially form a thin-walled portion to improve the adhesion to the resin. However, although this semiconductor device has a temporary effect, the thinned semiconductor device has some flexibility, and it cannot be said that it is sufficient, and resin peeling and lead disconnection occur. Further, in such a semiconductor device, in order to half-etch the lead, the lead needs to have a thickness (for example, 2 mm or more), which not only makes it difficult to reduce the thickness of the semiconductor device but also increases the productivity of the semiconductor device. There is a problem that it is low.
The present invention has been made in view of such circumstances, and an object of the present invention is to provide a small and thin resin-encapsulated semiconductor device which is free from defects such as resin peeling and lead removal and has excellent reliability.
[0004]
[Means for Solving the Problems]
The resin-encapsulated semiconductor device according to the present invention that meets the above object includes an element mounting portion on which a semiconductor chip is mounted, a plurality of leads provided around the element mounting portion, an electrode pad of the semiconductor chip, and the lead In a resin-encapsulated semiconductor device having a bonding wire for electrically connecting a wire bonding portion formed at the tip of the resin, and these are at least exposed at the bottom of the lead and covered with a sealing resin ,
The lead is provided with a bent protruding piece that bites into the sealing resin at a position behind the wire bonding portion,
In addition, the protruding pieces are formed on both sides of the lead, the height of the protruding pieces is the same as or shorter than the interval between the adjacent leads, and the position where the protruding pieces of the adjacent leads are formed is It is formed by changing the location in the longitudinal direction of the leads so that the protruding pieces of the adjacent leads do not overlap.
[0005]
Thus, in the resin-encapsulated semiconductor device according to the present invention, since the bent protruding piece formed on a part of the lead bites into the sealing resin, the lead is anchored in the sealing resin. It is fixed and firmly fixed.
In the resin-encapsulated semiconductor device according to the present invention, the projecting piece is formed by bending a widened portion formed by projecting to a part of the lead on both sides in the width direction from a root or an intermediate portion to the encapsulating resin side. Also good.
[0006]
DETAILED DESCRIPTION OF THE INVENTION
Next, embodiments of the present invention will be described with reference to the accompanying drawings for understanding of the present invention.
FIG. 1 is a cross-sectional view of a resin-encapsulated semiconductor device according to an embodiment of the present invention, and FIG. 2 is a plan view of a lead frame used in the resin-encapsulated semiconductor device in the manufacturing process. 3A is a partially enlarged perspective view of a lead of the resin-encapsulated semiconductor device, and FIG. 3B is a cross-sectional view of the lead. 4A and 4B are partially enlarged perspective views of leads of a resin-encapsulated semiconductor device according to another embodiment.
[0007]
As shown in FIG. 1, a resin-encapsulated semiconductor device 10 according to an embodiment of the present invention includes a lead frame 13 having an element mounting portion 11 at the center and a plurality of leads 12 around it. .
The lead frame 13 is made of a metal material mainly composed of copper, iron, or nickel alloy. As shown in FIG. 2, in the manufacturing process, the lead frame 13 includes a frame 14 around the center, and the central element mounting portion 11 is It is supported by the surrounding frame body 14 via the support leads 15-18. A plurality of leads 12 are provided inside the frame body 14 in a state separated from the central element mounting portion 11. A wire bonding portion 19 on which noble metal plating is formed is provided at the inner front end portion of each lead 12.
[0008]
At the rear position of the wire bonding portion 19 of each lead 12 (that is, the frame body 14 side), a pair of protruding pieces 20 and 21 protruding in the width direction are provided. As shown in FIG. 3A, the projecting pieces 20 and 21 are formed with widened portions on both sides of the intermediate position of the lead 12, and the widened portions formed by projecting on both sides in the width direction are the side edges of the lead 12. It is bent upward (on the sealing resin side) at the (root portion) or halfway position. Note that the height of the protruding pieces 20 and 21 is about the same as or slightly shorter than the interval between the adjacent leads 12. Further, the projecting pieces 20 and 21 of the adjacent leads 12 are formed at different positions in the longitudinal direction of the leads 12 so that the projecting pieces 20 and 21 of the adjacent leads 12 do not overlap. Thus, by changing the positions of the adjacent protruding pieces 20 and 21 in the length direction of the lead, the protruding pieces 20 and 21 having the maximum bending height can be formed from one strip. The bending angle θ of the protruding pieces 20 and 21 may be perpendicular to the surface of the lead 12, but as shown in FIG. 3B, the bending angle θ is, for example, 95 to 135 degrees or 45 to 85 degrees. By doing so, it becomes difficult to come off when resin-sealed.
[0009]
A semiconductor device 10 using the lead frame 13 will be described with reference to FIG.
A semiconductor chip 22 is mounted on the central element mounting portion 11 via an adhesive. Each electrode pad 23 of the semiconductor chip 22 and the wire bonding part 19 formed at the tip of each lead 12 are electrically connected by a bonding wire 24, respectively. The main part of the lead frame 13 excluding the semiconductor chip 22, the bonding wires 24 and the bottom surface is resin-sealed with a sealing resin 25. In this case, the resin-encapsulated semiconductor device 10 in which the frame body 14 outside the sealing resin 25 and the outer end portions of the leads 12 continuous thereto are finally removed is formed.
[0010]
In this resin-encapsulated semiconductor device 10, the bent protruding pieces 20, 21 formed at the intermediate position of each lead 12 are fitted in the sealing resin 25, so that each lead 12 is firmly attached to the sealing resin 25. It will be fixed. Therefore, even if bending stress is applied to the thin resin-encapsulated semiconductor device 10 itself, unlike the conventional resin-encapsulated semiconductor device, the lead 12 does not come off the resin.
[0011]
Subsequently, a resin-encapsulated semiconductor device according to another embodiment of the present invention will be described with reference to FIGS. 4A and 4B, but different from the resin-encapsulated semiconductor device 10 described above. Since only the leads 27 and 28 and the protruding pieces 29 and 30 formed thereon are described, only this portion will be described.
In the lead 27 of the resin-encapsulated semiconductor device shown in FIG. 4A, a through hole 31 is formed behind the wire bonding portion of the lead 27, and a side peripheral portion of the through hole 31 is bent to provide a sealing resin side. Projecting pieces 29 are formed by burring or the like.
Further, in the lead 28 of the resin-encapsulated semiconductor device shown in FIG. 4B, a rectangular through hole 32 is formed, and a partially connected cutout piece of the through hole 32 is bent in the direction of the encapsulating resin and protrudes. A piece 30 is formed.
[0012]
As described above, by providing the leads 27 and 28 with the bent projecting pieces 29 and 30 that bite and fit into the sealing resin side, the leads 27 and 28 are fixed to the sealing resin, and lead removal and resin peeling are unlikely to occur. It becomes a structure.
A plurality of protruding pieces 29 and 30 can be formed on the lead, which further improves the bonding strength between the lead and the sealing resin.
[0013]
The protruding pieces 20, 21, 29, and 30 can be formed not by etching but by pressing, so that the productivity of the resin-encapsulated semiconductor device is improved.
The resin-encapsulated semiconductor device according to the present invention is not limited to the above embodiment, and for example, the protruding piece may be formed inside the lead in the width direction. Further, the widened portion before forming the protruding piece can be formed at an angle with respect to the longitudinal direction of the lead, and the widened portion can be bent with reference to the side edge portion of the lead or the vicinity thereof, thereby further increasing the resin. The bite is better.
[0014]
【The invention's effect】
As is apparent from the above description, the resin-encapsulated semiconductor device according to any one of claims 1 and 2 includes a bent protruding piece that bites into the resin seal at a position behind the wire bonding portion. Therefore, the bonding property between the lead and the sealing resin is improved, and a small and thin resin-encapsulated semiconductor device excellent in reliability that is less likely to cause lead disconnection or resin peeling can be provided.
Such projecting pieces can be formed by pressing, and etching is not required, so that the productivity of the resin-encapsulated semiconductor device is improved.
In particular, in the resin-encapsulated semiconductor device according to claim 2, the protruding piece is formed by bending a widened portion formed to protrude on both sides in the width direction on a part of the lead to the sealing resin side. Therefore, the energization area of the lead is secured, and the present invention can be suitably applied to a resin-encapsulated semiconductor device having a narrow lead.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a resin-encapsulated semiconductor device according to an embodiment of the present invention.
FIG. 2 is a plan view of a lead frame used in the resin-encapsulated semiconductor device in the manufacturing process.
3A is a partially enlarged perspective view of a lead of the resin-encapsulated semiconductor device, and FIG. 3B is a cross-sectional view of the lead.
4A and 4B are partially enlarged perspective views of leads of a resin-encapsulated semiconductor device according to another embodiment.
[Explanation of symbols]
10: resin-encapsulated semiconductor device, 11: element mounting portion, 12: lead, 13: lead frame, 14: frame body, 15-18: support lead, 19: wire bonding portion, 20, 21: protruding piece, 22 : Semiconductor chip, 23: Electrode pad, 24: Bonding wire, 25: Sealing resin, 27, 28: Lead, 29, 30: Projection piece, 31, 32: Through hole

Claims (2)

半導体チップを搭載した素子搭載部と、該素子搭載部の周囲に設けられた複数のリードと、前記半導体チップの電極パッドと前記リードの先端部に形成されているワイヤボンディング部を電気的に接続するボンディングワイヤとを有し、これらは少なくとも前記リードの底面を露出させて封止樹脂によって被覆されている樹脂封止型半導体装置において、
前記リードには、前記封止樹脂に食い込み嵌入する屈曲した突出片が、前記ワイヤボンディング部より後方位置に設けられ、
しかも、前記突出片は前記リードの両側に形成され、該突出片の高さは隣り合う前記リードの間隔と同一か又は短く形成され、更に、隣り合う前記リードの前記突出片の形成位置は該リードの長手方向に場所を変えて形成され、隣り合う前記リードの前記突出片が重複しないようになっていることを特徴とする樹脂封止型半導体装置。Electrical connection between an element mounting portion on which a semiconductor chip is mounted, a plurality of leads provided around the element mounting portion, and an electrode pad of the semiconductor chip and a wire bonding portion formed at the tip of the lead In a resin-encapsulated semiconductor device in which at least the bottom surface of the lead is exposed and covered with an encapsulating resin.
The lead has a bent protruding piece that bites into the sealing resin and is provided at a rear position from the wire bonding portion.
In addition, the protruding pieces are formed on both sides of the lead, and the height of the protruding pieces is the same as or shorter than the interval between the adjacent leads. A resin-encapsulated semiconductor device, wherein the resin-encapsulated semiconductor device is formed by changing the location in the longitudinal direction of the leads so that the protruding pieces of adjacent leads do not overlap . 請求項１記載の樹脂封止型半導体装置において、前記突出片は、前記リードの一部に幅方向両側に突出して形成された拡幅部を封止樹脂側に折り曲げて形成されていることを特徴とする樹脂封止型半導体装置。2. The resin-encapsulated semiconductor device according to claim 1, wherein the protruding piece is formed by bending a widened portion formed on a part of the lead so as to protrude on both sides in the width direction to the sealing resin side. A resin-encapsulated semiconductor device.
JP32793499A 1999-11-18 1999-11-18 Resin-sealed semiconductor device Expired - Fee Related JP3614738B2 (en)

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