JPH1012773A - Resin-sealed semiconductor device and its manufacture - Google Patents
Resin-sealed semiconductor device and its manufactureInfo
- Publication number
- JPH1012773A JPH1012773A JP8162656A JP16265696A JPH1012773A JP H1012773 A JPH1012773 A JP H1012773A JP 8162656 A JP8162656 A JP 8162656A JP 16265696 A JP16265696 A JP 16265696A JP H1012773 A JPH1012773 A JP H1012773A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- lead frame
- semiconductor element
- insulating sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18165—Exposing the passive side of the semiconductor or solid-state body of a wire bonded chip
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3421—Leaded components
- H05K3/3426—Leaded components characterised by the leads
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、樹脂封止型半導体
装置に関するもので、特に小型化、薄型化に好適の構造
を有し、高信頼性を持った樹脂封止型半導体装置および
その製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor device, and more particularly, to a highly reliable resin-encapsulated semiconductor device having a structure suitable for miniaturization and thinning, and its manufacture. It is about the method.
【０００２】[0002]
【従来の技術】近年、樹脂封止型半導体装置は高密度化
にともない、小型化、薄型化の方向に進んでいる。2. Description of the Related Art In recent years, resin-encapsulated semiconductor devices have been miniaturized and thinned with the increase in density.
【０００３】従来の樹脂封止型半導体装置について、図
面を参照しながら説明する。図３は、従来の樹脂封止型
半導体装置を示す断面図である。A conventional resin-encapsulated semiconductor device will be described with reference to the drawings. FIG. 3 is a sectional view showing a conventional resin-encapsulated semiconductor device.
【０００４】図３に示すように、従来の樹脂封止型半導
体装置は、リードフレーム１のダイパッド部２上に銀ペ
ースト等の接着剤により、半導体素子３が接合され、そ
の半導体素子３の電極（図示せず）と、リードフレーム
１のインナーリード部４とが金属ワイヤー５により、電
気的に接続されている。そしてダイパッド部２上の半導
体素子３、金属ワイヤー５、インナーリード部４の外囲
は、エポキシ樹脂等の封止樹脂６により封止され、その
封止樹脂６から、外部との接続用のアウターリード部７
が突出した構造を有している。As shown in FIG. 3, in a conventional resin-encapsulated semiconductor device, a semiconductor element 3 is bonded onto a die pad portion 2 of a lead frame 1 by an adhesive such as a silver paste, and an electrode of the semiconductor element 3 is formed. (Not shown) and the inner lead portion 4 of the lead frame 1 are electrically connected by a metal wire 5. The outer periphery of the semiconductor element 3, the metal wire 5, and the inner lead portion 4 on the die pad portion 2 is sealed with a sealing resin 6 such as an epoxy resin. Lead part 7
Has a protruding structure.
【０００５】次に図３に示した従来の樹脂封止型半導体
装置の製造方法について説明する。まずダイボンド工程
として、リードフレームのダイパッド部に半導体素子を
接着剤により接合する。そしてワイヤーボンド工程とし
て、接合した半導体素子上の電極と、リードフレームの
インナーリード部とを金属ワイヤーにより接続する。次
に封止工程として、半導体素子を接合したリードフレー
ムを封止金型に入れ、半導体素子、金属ワイヤー、イン
ナーリード部の外囲領域を封止樹脂により封止する。最
後に、リードフレームのアウターリード部を成形して樹
脂封止型半導体装置が完成するものである。Next, a method of manufacturing the conventional resin-encapsulated semiconductor device shown in FIG. 3 will be described. First, as a die bonding step, a semiconductor element is bonded to a die pad portion of a lead frame with an adhesive. Then, as a wire bonding step, the electrode on the bonded semiconductor element and the inner lead portion of the lead frame are connected by a metal wire. Next, as a sealing step, the lead frame to which the semiconductor element has been joined is placed in a sealing mold, and the semiconductor element, metal wires, and the area surrounding the inner lead portion are sealed with a sealing resin. Finally, the outer lead portion of the lead frame is molded to complete the resin-sealed semiconductor device.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら従来の樹
脂封止型半導体装置の場合、封止樹脂より突出したアウ
ターリード部に対して、図３に示したように、成形によ
り曲げ加工を施さなければならず、工程の低減に支障を
きたしていた。また、樹脂封止型半導体装置の検査工程
や搬送中等においては、成形したアウターリード部が変
形を起こしやすく、リード変形により、樹脂封止型半導
体装置を基板に実装する際には、著しく信頼性を低下す
るという課題があった。また、アウターリード部が封止
樹脂よりも突出しており、そのアウターリード部は曲げ
囲う部分を有しているので、樹脂封止型半導体装置とし
て、実装面積が増加するという表面実装上の課題もあっ
た。その他、アウターリード部を封止樹脂から突出さ
せ、面導出をはかる場合においては、導出部分に樹脂バ
リが発生し、樹脂封止型半導体装置を基板に実装する際
には、著しく信頼性を低下するという課題や、半導体素
子はリードフレームのダイパッド部に接合されているの
で、ダイパッド部と封止樹脂との熱膨張差が発生し、パ
ッケージクラックが発生するという課題があった。However, in the case of the conventional resin-encapsulated semiconductor device, the outer lead portion protruding from the encapsulating resin must be formed by bending as shown in FIG. In other words, the reduction in the number of steps has been hindered. In addition, the molded outer leads are liable to be deformed during an inspection process, transportation, or the like of the resin-encapsulated semiconductor device. There was a problem that it decreased. In addition, since the outer lead portion protrudes from the sealing resin, and the outer lead portion has a bent portion, there is a problem in surface mounting that a mounting area increases as a resin-encapsulated semiconductor device. there were. In addition, when the outer leads are projected from the sealing resin and the surface is led out, resin burrs are generated at the lead-out parts, and when mounting the resin-sealed semiconductor device on the board, the reliability is significantly reduced. In addition, since the semiconductor element is bonded to the die pad portion of the lead frame, a difference in thermal expansion between the die pad portion and the sealing resin occurs, and a package crack occurs.
【０００７】本発明は前記従来の課題を解決するもので
あり、アウターリード部を成形する必要がなく、またダ
イパッド部を有しない樹脂封止型半導体装置であり、高
信頼性を有したものであって、小型化、薄型化に着目し
た樹脂封止型半導体装置およびその製造方法を提供する
ことを目的とする。The present invention has been made to solve the above-mentioned conventional problems, and is a resin-encapsulated semiconductor device which does not need to form an outer lead portion and has no die pad portion, and has high reliability. It is another object of the present invention to provide a resin-encapsulated semiconductor device focused on miniaturization and thinning, and a method for manufacturing the same.
【０００８】[0008]
【課題を解決するための手段】前記従来の課題を解決す
るために、本発明の樹脂封止型半導体装置は、半導体素
子と、その半導体素子の近傍に配置された端子部と、半
導体素子と端子部とを接続したワイヤーと、そのワイヤ
ーを含む半導体素子および端子部の表面領域を封止した
樹脂とよりなり、半導体素子および端子部の裏面が樹脂
より露出させた構造を有するものである。In order to solve the above-mentioned conventional problems, a resin-encapsulated semiconductor device according to the present invention comprises a semiconductor element, a terminal portion disposed near the semiconductor element, and a semiconductor device. It has a structure in which a wire connected to the terminal portion and a resin sealing the surface region of the semiconductor element and the terminal portion including the wire, and the back surfaces of the semiconductor element and the terminal portion are exposed from the resin.
【０００９】またその製造方法においては、開口部を有
したリードフレームと絶縁シートとを接着剤により接着
し、リードフレーム構成体を形成する第１工程と、その
リードフレーム構成体に対して、絶縁シート上のリード
フレームの開口部に半導体素子を接着する第２工程と、
半導体素子とその半導体素子の近傍に配置しているリー
ドフレームの先端部とをワイヤーにより接続する第３工
程と、絶縁シートの半導体素子が接着された面側に対し
てのみ、封止樹脂を形成する第４工程と、リードフレー
ムの封止樹脂が形成されていない絶縁シート側に対し
て、絶縁シートのみを剥がす第５工程と、第４工程にお
いて形成した封止樹脂の領域外に突出したリードフレー
ム部分の切断を行ない、外部端子部を形成する第６工程
とよりなるものである。In the manufacturing method, a lead frame having an opening is bonded to an insulating sheet with an adhesive to form a lead frame structure, and an insulating process is performed on the lead frame structure. A second step of bonding the semiconductor element to the opening of the lead frame on the sheet;
A third step of connecting the semiconductor element and the tip of a lead frame disposed near the semiconductor element by a wire, and forming a sealing resin only on the surface of the insulating sheet to which the semiconductor element is bonded A fourth step of peeling off only the insulating sheet from the side of the lead frame on which the sealing resin is not formed, and a lead projecting outside the region of the sealing resin formed in the fourth step. A sixth step of cutting the frame portion to form an external terminal portion.
【００１０】[0010]
【発明の実施形態】前記構成の通り、外部との接続用で
ある端子部は、その表面と側面とが封止樹脂により固定
され、封止樹脂よりも突出していないので、搬送時の変
形を防止することができるとともに樹脂封止型半導体装
置の小型化が実現できる。また半導体素子、端子部の片
面のみに封止樹脂を形成しているので、樹脂封止型半導
体装置としての薄型化を実現できる。さらに半導体素子
を搭載するためのダイパッド部に相当する構成を有して
いないので、薄型化とともに、ダイパッド部の熱膨張に
よる応力で封止樹脂にクラックが発生する、いわゆるパ
ッケージクラックの発生を防止することができる。また
半導体素子の裏面が露出して構造であるため、放熱性を
高めることができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS As described above, the surface and side surfaces of a terminal portion for connection with the outside are fixed by a sealing resin and do not protrude beyond the sealing resin. In addition, the size of the resin-encapsulated semiconductor device can be reduced. In addition, since the sealing resin is formed only on one surface of the semiconductor element and the terminal portion, a reduction in thickness as a resin-sealed semiconductor device can be realized. Furthermore, since it does not have a configuration corresponding to a die pad portion for mounting a semiconductor element, it is possible to reduce the thickness and prevent the so-called package crack from occurring in the sealing resin due to stress due to thermal expansion of the die pad portion. be able to. In addition, since the structure is such that the back surface of the semiconductor element is exposed, heat dissipation can be improved.
【００１１】製造方法においては、はじめは絶縁シート
をリードフレームに対して付与しておき、樹脂封止後
に、その絶縁シートを剥離除去することにより、半導体
素子の裏面を露出させ、ダイパッドレスの構造を実現す
る片面樹脂封止を達成できる。また半導体素子の絶縁シ
ート上への搭載は、絶縁シートに形成した接着剤をその
まま利用することで達成できる。また剥離容易な接着剤
でリードフレームと絶縁シートとを接着しているので、
絶縁シートの剥離（ピールオフ）も簡易に行なうことが
できる。さらに、片面封止により、端子部の基板接合
面、すなわち端子部の裏面に樹脂バリが付着することを
防止できる。In the manufacturing method, first, an insulating sheet is applied to a lead frame, and after sealing with a resin, the insulating sheet is peeled off to expose the back surface of the semiconductor element, thereby achieving a die padless structure. Can be achieved by single-sided resin sealing. The mounting of the semiconductor element on the insulating sheet can be achieved by directly using the adhesive formed on the insulating sheet. Also, since the lead frame and the insulating sheet are bonded with an adhesive that is easy to peel off,
Separation (peel-off) of the insulating sheet can also be easily performed. Furthermore, the single-sided sealing can prevent resin burrs from adhering to the substrate bonding surface of the terminal portion, that is, the back surface of the terminal portion.
【００１２】以下、本発明の一実施形態について図面を
参照しながら説明する。図１は本実施形態の樹脂封止型
半導体装置の構造を示すものであり、図１（ａ）は、外
形を示す表面の斜視図、図１（ｂ）は外形を示す裏面の
斜視図、図１（ｃ）は内部構造を示す断面図である。An embodiment of the present invention will be described below with reference to the drawings. 1A and 1B show the structure of the resin-encapsulated semiconductor device of the present embodiment. FIG. 1A is a perspective view of a front surface showing an outer shape, FIG. 1B is a perspective view of a back surface showing an outer shape, FIG. 1C is a sectional view showing the internal structure.
【００１３】図１に示すように、本実施形態の樹脂封止
型半導体装置は、半導体素子８と、半導体素子８の電極
（図示せず）と金属ワイヤー９により電気的に接続され
た外部端子部１０と、半導体素子８、金属ワイヤー９、
外部端子部１０の外囲領域であって、その一方の面のみ
を封止した封止樹脂１１よりなるものである。すなわ
ち、金属ワイヤー９を含む半導体素子８と外部端子部１
０の表面と側面領域のみが封止樹脂１１により封止さ
れ、半導体素子８と外部端子部１０の裏面は露出してい
る構造を有するものである。そして外部端子部１０は、
フラット形状をなしているので、表面実装タイプの半導
体装置として、優れた端子形状を有している。また、こ
こで本実施形態の樹脂封止型半導体装置は、図１（ｂ）
に示すように、半導体素子８の裏面が封止樹脂１１より
露出した構造を有し、また外部端子部１０もその裏面が
封止樹脂１１より露出した構造を有している。As shown in FIG. 1, the resin-encapsulated semiconductor device according to the present embodiment has a semiconductor element 8 and external terminals electrically connected to electrodes (not shown) of the semiconductor element 8 by metal wires 9. A part 10, a semiconductor element 8, a metal wire 9,
It is an area surrounding the external terminal portion 10 and is made of a sealing resin 11 in which only one surface thereof is sealed. That is, the semiconductor element 8 including the metal wire 9 and the external terminal 1
The semiconductor device 8 and the back surface of the external terminal portion 10 are exposed only in the surface and side regions of the semiconductor device 8 with the sealing resin 11. And the external terminal unit 10
Since it has a flat shape, it has an excellent terminal shape as a surface mount type semiconductor device. Here, the resin-encapsulated semiconductor device of the present embodiment is shown in FIG.
As shown in FIG. 2, the semiconductor element 8 has a structure in which the back surface is exposed from the sealing resin 11, and the external terminal portion 10 also has a structure in which the back surface is exposed from the sealing resin 11.
【００１４】本実施形態の樹脂封止型半導体装置は、従
来のようにアウターリード部に対して曲げ加工を施すこ
となく、表面実装に適した端子構造有するものであり、
基板への実装のための実装面積を低下させることができ
る。また一方の面が封止樹脂１１により封止された構造
の外部端子部１０を有しているので、外部端子部１０自
体が封止樹脂１１により固定され、樹脂封止型半導体装
置の検査、搬送時に外部端子部１０が変形し、実装時の
信頼性を低下するという課題も解消することができる。
また半導体素子８を搭載するためのダイパッド部自体を
削除しているので、封止樹脂内でのダイパッド部の熱膨
張による応力の発生はなくなり、パッケージクラックの
発生を防止することができる。また半導体素子８はその
裏面が外部に露出しているので、放熱性も向上する。The resin-encapsulated semiconductor device of this embodiment has a terminal structure suitable for surface mounting without bending the outer lead portion as in the prior art.
The mounting area for mounting on a substrate can be reduced. In addition, since the external terminal portion 10 has a structure in which one surface is sealed by the sealing resin 11, the external terminal portion 10 itself is fixed by the sealing resin 11, and the inspection of the resin-sealed semiconductor device can be performed. It is also possible to solve the problem that the external terminal portion 10 is deformed at the time of transportation and the reliability at the time of mounting is reduced.
Further, since the die pad portion for mounting the semiconductor element 8 is omitted, no stress is generated due to the thermal expansion of the die pad portion in the sealing resin, and the occurrence of a package crack can be prevented. In addition, since the back surface of the semiconductor element 8 is exposed to the outside, heat dissipation is also improved.
【００１５】次に本実施形態の樹脂封止型半導体装置の
製造方法について図面を参照しながら説明する。Next, a method for manufacturing the resin-encapsulated semiconductor device of the present embodiment will be described with reference to the drawings.
【００１６】図２は本実施形態の樹脂封止型半導体装置
の製造方法を示す工程ごとの断面図である。FIG. 2 is a cross-sectional view showing the steps of a method for manufacturing a resin-encapsulated semiconductor device according to this embodiment.
【００１７】まず図２（ａ）に示すように、第１工程と
して、リードフレーム１２と、絶縁物より構成された絶
縁シート１３とを接着剤により接着し、構成体１４を形
成する。リードフレーム１２は、次工程で半導体素子を
搭載する領域が開口部１５を有した薄膜状のものであ
る。また絶縁シート１３はポリイミドテープ、ポリイミ
ドフイルムなどの絶縁物質より構成されたものを用い
る。なお、ここではリードフレーム１２と絶縁シート１
３とを接着剤により接着させているが、予め絶縁シート
１３の片面に接着剤が塗布された接着性絶縁シートを用
いてもよい。First, as shown in FIG. 2A, as a first step, a lead frame 12 and an insulating sheet 13 made of an insulating material are adhered by an adhesive to form a structure 14. The lead frame 12 is a thin film having an opening 15 in a region where a semiconductor element is to be mounted in the next step. The insulating sheet 13 is made of an insulating material such as a polyimide tape or a polyimide film. Here, the lead frame 12 and the insulating sheet 1
3 is bonded by an adhesive, but an adhesive insulating sheet in which an adhesive is applied to one surface of the insulating sheet 13 in advance may be used.
【００１８】次に図２（ｂ）に示すように、第２工程と
して、第１工程で形成したリードフレーム１２／絶縁シ
ート１３の構成体１４に対して、その絶縁シート１３上
のリードフレーム１２の開口部１５に半導体素子８を搭
載する。半導体素子８の絶縁シート１３上への搭載は、
リードフレーム１２と絶縁シート１３とを接着した接着
剤をそのまま利用して接着して行なうことができる。Next, as shown in FIG. 2B, as a second step, the lead frame 12 / insulating sheet 13 formed in the first step is The semiconductor element 8 is mounted in the opening 15 of FIG. The mounting of the semiconductor element 8 on the insulating sheet 13 is as follows.
The bonding can be performed by directly using the adhesive bonding the lead frame 12 and the insulating sheet 13 together.
【００１９】次に図２（ｃ）に示すように、第３工程と
して、半導体素子８の電極と、その半導体素子８の近傍
に延在するリードフレーム１２の先端部とを金属ワイヤ
ー９により電気的に接続する。Next, as shown in FIG. 2C, as a third step, an electrode of the semiconductor element 8 and a tip end of a lead frame 12 extending near the semiconductor element 8 are electrically connected by a metal wire 9. Connection.
【００２０】次に図２（ｄ）に示すように、第４工程と
して、絶縁シート１３の半導体素子８が接着された面側
に対してのみ、封止樹脂１１を形成する。これは半導体
素子８が接着され、金属ワイヤー９で接続されたリード
フレーム１２／絶縁シート１３の構成体１４を金型に入
れ、エポキシ樹脂等の封止樹脂を注入するトランスファ
ーモールドによって、片面封止を行なうものである。Next, as shown in FIG. 2D, as a fourth step, the sealing resin 11 is formed only on the surface of the insulating sheet 13 to which the semiconductor element 8 is adhered. This is because the semiconductor element 8 is adhered and the structure 14 of the lead frame 12 / insulating sheet 13 connected by the metal wire 9 is put into a mold, and one-side sealing is performed by transfer molding in which a sealing resin such as an epoxy resin is injected. Is performed.
【００２１】次に図２（ｅ）に示すように、第５工程と
して、リードフレーム１２の封止樹脂１１が形成されて
いない絶縁シート１３（破線で示す）側に対して、絶縁
シート１３のピールオフを行なう。リードフレーム１２
と絶縁シート１３とは、接着剤により接着しているだけ
なので、容易に絶縁シート１３のみを剥がすことができ
る。また、封止樹脂１１と絶縁シート１３との密着性に
ついては、絶縁シート１３上には、接着剤が形成されて
いるので、封止樹脂１１と絶縁シート１３との界面には
接着剤が存在することになり、密着性は低下することに
なる。したがって、容易に絶縁シート１３のみを剥がす
ことができる。Next, as shown in FIG. 2 (e), as a fifth step, the insulating sheet 13 (shown by a broken line) of the lead frame 12 on which the sealing resin 11 is not formed is applied. Perform a peel-off. Lead frame 12
Since only the insulating sheet 13 is bonded to the insulating sheet 13 with the adhesive, only the insulating sheet 13 can be easily peeled off. Regarding the adhesion between the sealing resin 11 and the insulating sheet 13, since the adhesive is formed on the insulating sheet 13, the adhesive exists at the interface between the sealing resin 11 and the insulating sheet 13. And the adhesiveness is reduced. Therefore, only the insulating sheet 13 can be easily peeled off.
【００２２】最後に図２（ｆ）に示すように、第６工程
として、リードフレーム１２の封止樹脂１１が形成され
ていない部分（破線で示す）、すなわち、封止樹脂１１
の領域外に突出した部分の切断を行ない、外部端子部１
０を形成する。外部端子部１０の変形防止、基板実装時
の接合の信頼性向上のため、外部端子部１０の封止樹脂
１１からの突出量は極力抑えるようにする。Finally, as shown in FIG. 2F, as a sixth step, a portion of the lead frame 12 where the sealing resin 11 is not formed (shown by a broken line), that is, the sealing resin 11 is formed.
The portion protruding out of the area of the external terminal portion is cut.
0 is formed. In order to prevent deformation of the external terminal portion 10 and to improve the reliability of bonding at the time of mounting on the substrate, the amount of protrusion of the external terminal portion 10 from the sealing resin 11 is minimized.
【００２３】以上のように、ピールオフ可能なように、
リードフレーム１２と絶縁シート１３とを接着して構成
体１４を形成することにより、リードフレーム１２面を
封止樹脂１１で封止した後、絶縁シート１３を剥がすこ
とができ、片面封止を実現して薄型化、小型化に対応し
た樹脂封止型半導体装置を形成することができる。また
リードフレーム１２と半導体素子８を絶縁シート１３に
より固定してから、樹脂封止し、絶縁シート１３の除去
を行なうという工法により、半導体素子８の固定ととも
に、外部端子部１０の面導出部分、すなわち基板実装時
の外部端子部１０の接合面（下面部分）への樹脂バリが
付着することはなくなるので、基板実装時の接合信頼性
を向上させることができる。As described above, so that peel-off is possible,
By forming the structure 14 by bonding the lead frame 12 and the insulating sheet 13, the insulating sheet 13 can be peeled off after sealing the surface of the lead frame 12 with the sealing resin 11, realizing single-side sealing. As a result, a resin-encapsulated semiconductor device corresponding to a reduction in thickness and size can be formed. Also, by a method of fixing the lead frame 12 and the semiconductor element 8 with the insulating sheet 13, sealing the resin, and removing the insulating sheet 13, while fixing the semiconductor element 8, That is, the resin burrs do not adhere to the bonding surface (lower surface portion) of the external terminal portion 10 at the time of mounting the substrate, so that the bonding reliability at the time of mounting the substrate can be improved.
【００２４】なお、リードフレーム１２において、外部
端子部１０となる箇所の外部端子部１０の各ピッチを異
なるように形成することにより、異なるピッチにおける
基板実装を可能とするものである。In the lead frame 12, by forming the external terminal portions 10 at different pitches at locations to be the external terminal portions 10, it is possible to mount the board at different pitches.
【００２５】[0025]
【発明の効果】本発明の樹脂封止型半導体装置は、リー
ドフレームの片面封止と、外部端子部の構造により、薄
型化、小型化が実現した樹脂封止型半導体装置である。
また、従来のようにアウターリード部に対して曲げ加工
を施すことなく、表面実装に適した端子構造を有するも
のであり、基板への実装のための実装面積を低下させる
ことができる。また一方の面が封止樹脂により封止され
た構造の外部端子部を有しているので、外部端子部自体
が封止樹脂により固定され、樹脂封止型半導体装置の検
査、搬送時に外部端子部が変形し、実装時の信頼性を低
下するという課題も解消することができる。また半導体
素子を搭載するためのダイパッド部自体を削除している
ので、封止樹脂内でのダイパッド部の熱膨張による応力
の発生はなくなり、パッケージクラックの発生を防止す
ることができる。また半導体素子はその裏面が外部に露
出しているので、放熱性が向上するものである。The resin-encapsulated semiconductor device of the present invention is a resin-encapsulated semiconductor device that has been made thinner and smaller by the single-sided encapsulation of the lead frame and the structure of the external terminals.
In addition, the terminal structure suitable for surface mounting is provided without bending the outer lead portion as in the related art, and the mounting area for mounting on the substrate can be reduced. In addition, since one surface has an external terminal portion having a structure sealed with a sealing resin, the external terminal portion itself is fixed with the sealing resin. The problem that the portion is deformed and the reliability at the time of mounting is reduced can also be solved. Further, since the die pad portion for mounting the semiconductor element is eliminated, no stress is generated due to the thermal expansion of the die pad portion in the sealing resin, and the occurrence of a package crack can be prevented. In addition, since the back surface of the semiconductor element is exposed to the outside, heat dissipation is improved.
【００２６】製造方法においては、ピールオフ可能なよ
うに、リードフレームと絶縁シートとを接着して構成体
を形成しているので、リードフレーム面を封止樹脂で封
止した後、絶縁シートを剥がすことができ、片面封止を
実現して薄型化、小型化に対応した樹脂封止型半導体装
置を形成することができる。またリードフレームと半導
体素子を絶縁シートにより固定してから、樹脂封止し、
絶縁シートの除去を行なうという工法により、半導体素
子の固定とともに、外部端子部の面導出部分、すなわち
基板実装時の外部端子部の接合面（下面部分）への樹脂
バリが付着することを防止できるものである。In the manufacturing method, the lead frame and the insulating sheet are bonded to each other to form a structure so that peel-off can be performed. Therefore, after the lead frame surface is sealed with a sealing resin, the insulating sheet is peeled off. Thus, a resin-encapsulated semiconductor device capable of realizing single-sided encapsulation and corresponding to thinning and miniaturization can be formed. Also, after fixing the lead frame and the semiconductor element with an insulating sheet, resin sealing,
By the method of removing the insulating sheet, it is possible to fix the semiconductor element and to prevent resin burrs from adhering to the surface lead-out portion of the external terminal portion, that is, the bonding surface (lower surface portion) of the external terminal portion when mounting the substrate. Things.
【図１】本発明の一実施形態の樹脂封止型半導体装置を
示す図FIG. 1 is a view showing a resin-sealed semiconductor device according to an embodiment of the present invention;
【図２】本発明の一実施形態の樹脂封止型半導体装置の
製造方法を示す断面図FIG. 2 is a cross-sectional view illustrating a method of manufacturing a resin-sealed semiconductor device according to one embodiment of the present invention.
【図３】従来の樹脂封止型半導体装置を示す断面図FIG. 3 is a sectional view showing a conventional resin-encapsulated semiconductor device.
１ リードフレーム ２ ダイパッド部 ３ 半導体素子 ４ インナーリード部 ５ 金属ワイヤー ６ 封止樹脂 ７ アウターリード部 ８ 半導体素子 ９ 金属ワイヤー １０ 外部端子部 １１ 封止樹脂 １２ リードフレーム １３ 絶縁シート １４ 構成体 １５ 開口部 DESCRIPTION OF SYMBOLS 1 Lead frame 2 Die pad part 3 Semiconductor element 4 Inner lead part 5 Metal wire 6 Sealing resin 7 Outer lead part 8 Semiconductor element 9 Metal wire 10 External terminal part 11 Sealing resin 12 Lead frame 13 Insulating sheet 14 Component 15 Opening
───────────────────────────────────────────────────── フロントページの続き (72)発明者 坂口 茂樹 大阪府高槻市幸町１番１号 松下電子工業 株式会社内 (72)発明者 山田 雄一郎 大阪府高槻市幸町１番１号 松下電子工業 株式会社内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Shigeki Sakaguchi 1-1, Kochi-cho, Takatsuki-shi, Osaka Matsushita Electronics Co., Ltd. (72) Inventor Yuichiro Yamada 1-1-1, Kochi-cho, Takatsuki-shi, Osaka Matsushita Electronics Inside the corporation
Claims (6)
配置された端子部と、前記半導体素子と前記端子部とを
接続したワイヤーと、前記ワイヤーを含む前記半導体素
子および前記端子部の表面領域を封止した樹脂とよりな
り、前記半導体素子および前記端子部の裏面が前記樹脂
より露出してなることを特徴とする樹脂封止型半導体装
置。1. A semiconductor device, a terminal portion arranged near the semiconductor device, a wire connecting the semiconductor device and the terminal portion, and a surface region of the semiconductor device and the terminal portion including the wire And a back surface of the semiconductor element and the terminal portion is exposed from the resin.
配置された端子部と、前記半導体素子と前記端子部とを
接続したワイヤーと、前記ワイヤーを含む前記半導体素
子および前記端子部の表面と側面とを封止した樹脂とよ
りなることを特徴とする樹脂封止型半導体装置。2. A semiconductor device, a terminal portion disposed near the semiconductor device, a wire connecting the semiconductor device and the terminal portion, and a surface of the semiconductor device and the terminal portion including the wire. A resin-encapsulated semiconductor device comprising a resin whose side surfaces are encapsulated.
求項１または請求項２記載の樹脂封止型半導体装置。3. The resin-sealed semiconductor device according to claim 1, wherein the terminal portion is flat.
ートとを接着剤により接着し、リードフレーム構成体を
形成する第１工程と、前記リードフレーム構成体に対し
て、前記絶縁シート上のリードフレームの前記開口部に
半導体素子を接着する第２工程と、前記半導体素子と前
記半導体素子の近傍に配置している前記リードフレーム
の先端部とをワイヤーにより接続する第３工程と、前記
絶縁シートの前記半導体素子が接着された面側に対して
のみ、封止樹脂を形成する第４工程と、前記リードフレ
ームの前記封止樹脂が形成されていない絶縁シート側に
対して、前記絶縁シートのみを剥がす第５工程と、前記
第４工程において形成した封止樹脂の領域外に突出した
リードフレーム部分の切断を行ない、外部端子部を形成
する第６工程とよりなることを特徴とする樹脂封止型半
導体装置の製造方法。4. A first step of bonding a lead frame having an opening and an insulating sheet to each other with an adhesive to form a lead frame structure, and forming a lead on the insulating sheet with respect to the lead frame structure. A second step of bonding a semiconductor element to the opening of the frame, a third step of connecting the semiconductor element to a leading end of the lead frame disposed near the semiconductor element by a wire, and A fourth step of forming a sealing resin only on the surface side on which the semiconductor element is bonded, and the insulating sheet only on the insulating sheet side of the lead frame where the sealing resin is not formed. And a sixth step of cutting the lead frame portion projecting out of the region of the sealing resin formed in the fourth step to form an external terminal portion. A method for manufacturing a resin-encapsulated semiconductor device, comprising:
ートとを接着剤により接着し、リードフレーム構成体を
形成する第１工程と、前記リードフレーム構成体に対し
て、前記絶縁シート上のリードフレームの前記開口部に
半導体素子を前記リードフレームと絶縁シートとの接着
時に前記絶縁シート上に形成した接着剤により接着する
第２工程と、前記半導体素子と前記半導体素子の近傍に
配置している前記リードフレームの先端部とをワイヤー
により接続する第３工程と、前記絶縁シートの前記半導
体素子が接着された面側に対してのみ、封止樹脂を形成
する第４工程と、前記リードフレームの前記封止樹脂が
形成されていない面に接着している絶縁シートを剥離さ
せ、リードフレームおよび半導体素子の裏面側を露出さ
せる第５工程と、前記第４工程において形成した封止樹
脂の領域外に突出したリードフレーム部分の切断を行な
い、外部端子部を形成する第６工程とよりなることを特
徴とする樹脂封止型半導体装置の製造方法。5. A first step of bonding a lead frame having an opening and an insulating sheet to each other with an adhesive to form a lead frame structure, and forming a lead on the insulating sheet with respect to the lead frame structure. A second step of bonding a semiconductor element to the opening of the frame with an adhesive formed on the insulating sheet when bonding the lead frame and the insulating sheet; and disposing the semiconductor element and the semiconductor element in the vicinity thereof. A third step of connecting the leading end of the lead frame with a wire, a fourth step of forming a sealing resin only on the surface of the insulating sheet to which the semiconductor element is adhered, A fifth step of exfoliating the insulating sheet adhered to the surface on which the sealing resin is not formed and exposing the back surfaces of the lead frame and the semiconductor element; A method of manufacturing a resin-encapsulated semiconductor device, comprising: cutting a lead frame portion protruding out of a region of the sealing resin formed in the fourth step to form an external terminal portion. .
ーム部分の切断を行ない、外部端子部を形成する第６工
程は、前記封止樹脂と同一面でリードフレームを切断す
る工程であることを特徴とする請求項４または請求項５
記載の樹脂封止型半導体装置の製造方法。6. A sixth step of cutting a lead frame portion protruding out of a region of a sealing resin and forming an external terminal portion is a step of cutting the lead frame on the same surface as the sealing resin. 4. The method according to claim 4, wherein
The manufacturing method of the resin-sealed semiconductor device according to the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8162656A JPH1012773A (en) | 1996-06-24 | 1996-06-24 | Resin-sealed semiconductor device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8162656A JPH1012773A (en) | 1996-06-24 | 1996-06-24 | Resin-sealed semiconductor device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1012773A true JPH1012773A (en) | 1998-01-16 |
Family
ID=15758783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8162656A Pending JPH1012773A (en) | 1996-06-24 | 1996-06-24 | Resin-sealed semiconductor device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1012773A (en) |
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| KR20220160008A (en) | 2020-04-06 | 2022-12-05 | 쇼와덴코머티리얼즈가부시끼가이샤 | Temporary protective film for semiconductor encapsulation and manufacturing method thereof, lead frame with temporary protective film, temporarily protected sealed molded article, and method for manufacturing semiconductor package |
| KR20220164720A (en) | 2020-04-06 | 2022-12-13 | 쇼와덴코머티리얼즈가부시끼가이샤 | Method for manufacturing temporary protective film for semiconductor encapsulation molding, lead frame with temporary protective film, encapsulated molded article, and semiconductor package |
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1996
- 1996-06-24 JP JP8162656A patent/JPH1012773A/en active Pending
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