CN109037084A - A kind of packaging method of QFN fingerprint recognition chip - Google Patents
A kind of packaging method of QFN fingerprint recognition chip Download PDFInfo
- Publication number
- CN109037084A CN109037084A CN201810842406.2A CN201810842406A CN109037084A CN 109037084 A CN109037084 A CN 109037084A CN 201810842406 A CN201810842406 A CN 201810842406A CN 109037084 A CN109037084 A CN 109037084A
- Authority
- CN
- China
- Prior art keywords
- lead frame
- qfn
- strip
- chip
- fingerprint recognition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 54
- 210000003205 muscle Anatomy 0.000 claims abstract description 79
- 239000004033 plastic Substances 0.000 claims abstract description 61
- 229920003023 plastic Polymers 0.000 claims abstract description 61
- 239000012528 membrane Substances 0.000 claims abstract description 28
- 238000005728 strengthening Methods 0.000 claims abstract description 28
- 239000004332 silver Substances 0.000 claims abstract description 24
- 229910052709 silver Inorganic materials 0.000 claims abstract description 24
- 239000003292 glue Substances 0.000 claims abstract description 17
- 238000004140 cleaning Methods 0.000 claims abstract description 14
- 238000005520 cutting process Methods 0.000 claims abstract description 14
- 238000012360 testing method Methods 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 33
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 23
- 239000011347 resin Substances 0.000 claims description 20
- 229920005989 resin Polymers 0.000 claims description 20
- 238000003466 welding Methods 0.000 claims description 17
- 239000004411 aluminium Substances 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 238000001746 injection moulding Methods 0.000 claims description 12
- 238000011068 loading method Methods 0.000 claims description 12
- 239000012790 adhesive layer Substances 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 8
- 239000007787 solid Substances 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 7
- 238000005488 sandblasting Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 239000002585 base Substances 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 239000004744 fabric Substances 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 239000003513 alkali Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 238000013461 design Methods 0.000 claims description 4
- 239000007888 film coating Substances 0.000 claims description 4
- 238000009501 film coating Methods 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 238000003801 milling Methods 0.000 claims description 4
- 238000013268 sustained release Methods 0.000 claims description 4
- 239000012730 sustained-release form Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 238000005422 blasting Methods 0.000 claims description 3
- 230000009194 climbing Effects 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 239000010431 corundum Substances 0.000 claims description 3
- 239000003344 environmental pollutant Substances 0.000 claims description 3
- 239000003365 glass fiber Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 231100000719 pollutant Toxicity 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 238000010926 purge Methods 0.000 claims description 3
- 239000000741 silica gel Substances 0.000 claims description 3
- 229910002027 silica gel Inorganic materials 0.000 claims description 3
- 229920002379 silicone rubber Polymers 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 abstract description 11
- 238000007711 solidification Methods 0.000 abstract description 5
- 230000008023 solidification Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000005022 packaging material Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000000227 grinding Methods 0.000 description 7
- 238000011161 development Methods 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 241000209094 Oryza Species 0.000 description 3
- 235000007164 Oryza sativa Nutrition 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000003698 laser cutting Methods 0.000 description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 3
- 239000011112 polyethylene naphthalate Substances 0.000 description 3
- 235000009566 rice Nutrition 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910001651 emery Inorganic materials 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 239000013464 silicone adhesive Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000002459 sustained effect Effects 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical compound Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical group N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229940031098 ethanolamine Drugs 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- -1 polyethylene naphthalate Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 238000012956 testing procedure Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The invention discloses a kind of packaging methods of QFN fingerprint recognition chip, belong to technical field of semiconductor chip encapsulation.Its processing step is as follows: the lead frame back side mounts film carrier;Chip is sticked in lead frame;Silver paste solidification;Plasma cleaning;Routing;Plastic packaging;It goes to load film;After solidify;Even muscle hemisect;Sanding burr;Remove residue glue;Baking;Plastic packaging face is thinned and pastes strengthening membrane;Even muscle carries out strip test for cutting;Franking;Remove strengthening membrane;Excision forming.The present invention provides a kind of packaging methods for improving QFN fingerprint recognition chip packaging yield.
Description
Technical field
The present invention relates to a kind of packaging method of QFN fingerprint recognition chip, especially more and more thinner fingerprint recognition QFN refers to
The packaging method of line identification chip, belongs to technical field of semiconductor chip encapsulation.
Background technique
Fingerprint identification technology is the technical system of a system, and the industrial chain being related to is also complex, is related to fingerprint
Chip manufacturer, fingerprint recognition Mo Zu manufacturer, fingerprinting scheme provider, mobile phone terminal manufacturer and software application quotient etc..From
Chip, encapsulation, coating, cover board, becket, mould group again to the end, all links all start to make great efforts breakthrough bottleneck.
Fingerprint recognition field generallys use Substrate encapsulation at present.Fingerprint mould group price constantly drops.As fingerprint is known
The price of other mould group constantly drops, and the profit margin of Mo Zu factory is compressed, and survival pressure also increases suddenly, reduce chip package at
This, the more cheap QFN(quad flat non-pin package of use) packaging technology will be the following direction for needing to develop.But QFN
Product belongs to ultra-thin, chip super large class product, and the requirement of plastic packaging face is more and more thinner, and fracture wind easily occurs in encapsulation process
Danger, reduces product yield.
Summary of the invention
It is an object of the invention to overcome the shortcomings of existing encapsulation technology, the QFN for providing a kind of promotion product yield refers to
The packaging method of line identification chip.
The object of the present invention is achieved like this:
A kind of packaging method of QFN fingerprint recognition chip of the present invention, technique include the following steps:
Step 1: the lead frame back side mounts film carrier;
Step 2: QFN fingerprint recognition chip is sticked on the leadframe die seat in step 1 by silver paste, QFN fingerprint is known
The aluminium pad of other chip is set to the side of golden finger I nearby;
Step 3: silver paste solidifies, the connection of QFN fingerprint recognition chip and lead frame is reinforced;
Step 4: plasma cleaning removal lead frame oxidation on metal surface object and pollutant;
Step 5: carrying out routing key to the golden finger of QFN fingerprint recognition chip and lead frame, ground connection welding platform with bonding wire
It closes;
Step 6: the surface of lead frame using the above-mentioned QFN fingerprint recognition chip of die press technology for forming plastic packaging and bonding wire and
Lead frame forms strip-shaped product and its plastic packaging face;
Step 7: removing the loading film at the strip-shaped product back side after baking;
Step 8: will complete to solidify plastic packaging removes the strip-shaped product progress for loading film again after, and discharge strip interiors of products stress;
Step 9: carrying out half cutting process to company's muscle where golden finger using resin blade, formation is drawn after strip-shaped product baking
Foot;
Step 10: the burr that hemisect generates is polished;
Step 11: being rinsed using the residue glue of alkali electroless adhesive remover removal strip-shaped product, then with high pressure water;
Change Step 12: strip-shaped product is successively stacked and to form plural number, stack layer by layer, then be not less than strip-shaped product area steel
Plate is apart from top to bottom, and the top is flattened strip-shaped product with briquetting, the baking of entering to dry case constant temperature;
Step 13: strip-shaped product is carried out thinned and is ground, shape according to client's roughness requirements using milling apparatus to plastic packaging face
At abradant surface;
Step 14: carrying out the film coating process of strengthening membrane in abradant surface;
Step 15: being carried out to the pin surface on lead frame tin plating;
Step 16: company's muscle of cutting lead frame;
Step 17: carrying out strip test to strip-shaped product;
Step 18: in the radium-shine type information label in the back side of strip-shaped product;
Step 19: the strengthening membrane of abradant surface is removed after strip-shaped product baking;
Strip-shaped product is cut into a plurality of single packaging bodies Step 20: being cut by laser.
In step 1 of the present invention, the loading film includes sustained release layer, adhesive layer and Primary layer, and the material of the adhesive layer is
Improved polyimide material, range of viscosities are higher than 20N/cm, tensile strength at 190 ~ 200 DEG C of pad pasting temperature range, 20 DEG C
For 200MPa, 200 DEG C of whens, are greater than 100MPa.
It further include being smeared at the edge of the chip carrier of the side of the aluminium pad of QFN fingerprint recognition chip in step 2 of the present invention
Silver paste forms the ground connection welding platform of linear type, meanwhile, golden finger I also smears silver paste to routing region.
In step 2 of the present invention, the chip pastes parameter:<1>chip is bonded time (bond time): 50 ~ 150 millis
Second,<2>chip adhesive force (bond force): 0.5 ~ 1 newton,<3>chip position (die placement): +/- 30 is micro-
Rice,<4>silver paste climbing height: less than 75% chip thickness.
It further include the blasting treatment that the chip carrier of lead frame carries out in advance in step 3 of the present invention, specifically:
By the positive face paste high temperature resistant protective glue band of whole lead frame, only exposed chip seat, by lead frame fitly parallel
Cloth is on sand blasting jig and fixed, and the high temperature resistant protective glue band is formed by silicon rubber bonding glass fiber cloth, and bottom is coated with height
Warm speciality silica gel is resistant to 500 ~ 800 degree of high temperature, and does not stay residue glue after removing;
The sand blasting jig for carrying lead frame is delivered in abrasive blast equipment again, is heated 5 ~ 10 minutes, temperature rises to 400oC~
450oC makes the firmness change of lead frame to the 80% of most initial hardness;
The surface of the chip carrier of lead frame, shape are hit under conditions of certain pressure and speed using 200# corundum powder
At the rough surface of anisotropic, surface roughness Ra: 6 ~ 20 microns.
In step 4 of the present invention, using argon gas (Ar) and hydrogen (H2) it is used as purge gas, the plasma cleaning needs
Two work steps: step 1: power: 600watt, time: 10s;Step 2: power: 300 watt, time: 15s.
In step 6 of the present invention, the die press technology for forming parameter:<1>resin plastic-sealed material: EMC,<2>plastic packaging temperature:
160~180oC,<3>plastic packaging pressure: 6 ~ 16 tons,<4>curing time: 100 ~ 150 seconds,<5>product plastic packaging thickness: greater than
Product design thickness,<6>product plastic packaging thickness error control: +/- 15 microns.
In step 9 of the present invention, the resin blade used is with a thickness of 0.44mm.
In step 14 of the present invention, the strengthening membrane includes semi-solid preparation resin layer and base, the semi-solid preparation resin of strengthening membrane
Layer side is bonded with injection molding abradant surface.
In step 2 ten of the present invention, the strip-shaped product excision forming forms step-like pin.
Beneficial effect
(1) packaging method of QFN fingerprint recognition chip disclosed by the invention is improved by mounting film carrier at the lead frame back side
Lead frame bears the ability of huge pulling and impact force, reduces the risk of lead frame deformation well, improves lead
The coplanarity of frame can accurately cut strip-shaped product in last cutting process, reduce lead frame cut partially, product it is short
Transportation work style danger, improves product yield, while also reducing the golden finger jitter amplitude in bonding process, improves routing quality;
(2) packaging method of QFN fingerprint recognition chip disclosed by the invention in advance carries out at sandblasting the chip carrier of lead frame
Reason strengthens QFN fingerprint recognition chip and is bonded intensity with lead frame;
(3) packaging method of QFN fingerprint recognition chip disclosed by the invention is drawing plastic packaging material by the sufficient deflector hole of setting
Wire frame front and back sides are swimmingly flowed, and the reliability of the combination of plastic packaging layer and lead frame is enhanced;
(4) packaging method of QFN fingerprint recognition chip disclosed by the invention can increase encapsulation production by grinding face paste strengthening membrane
The toughness of product before the forming, solves the problems, such as that encapsulating products are easily broken off in technical process, reduces technological operation difficulty, really
Protect the product yield of encapsulating products;
(5) packaging method of QFN fingerprint recognition chip disclosed by the invention can be protected utmostly by grinding face paste strengthening membrane
The flatness and roughness of shield injection molding abradant surface, prevent its scuffing;
(6) packaging method of QFN fingerprint recognition chip disclosed by the invention is to lead frame first using even muscle hemisect, rear use
Laser cutting molding forms step-like pin, strengthens the reliability of encapsulating products and exterior PC B (printed wiring board) welding;
(7) packaging method of QFN fingerprint recognition chip disclosed by the invention sets the golden finger of lead frame, ground connection welding platform
It sets in the only side of aluminium pad of chip, improves routing efficiency, and improve the utilization area of QFN product.
Detailed description of the invention
Fig. 1 is a kind of schematic diagram of the process flow of the packaging method of QFN fingerprint recognition chip of the present invention;
Fig. 2 is a kind of diagrammatic cross-section of the encapsulating structure of QFN fingerprint recognition chip of the present invention;
Fig. 3 A is the schematic diagram of lead frame of the present invention;
Fig. 3 B, 3C are the B-B schematic cross-sectional view of company's muscle hemisect of lead frame in Fig. 3 A;
Fig. 4 is the schematic diagram of strengthening membrane of the present invention;
Fig. 5 is the schematic diagram of present invention laser cutting molding;
In figure:
Lead frame 10
Chip carrier 11
Even muscle 1,122,123,124
Golden finger I 141, golden finger II 142, golden finger III 143
Deflector hole I 151, deflector hole II 152
It is grounded welding platform 13
Etching line 191
Laser cut line 192
Chip 2
Aluminium pad 21
Bonding wire I 23, bonding wire II 24
Plastic part 3;
Even muscle
Strengthening membrane 40
Semi-solid preparation resin layer 41
Base 42
Wearing layer 43.
Specific embodiment
In order to elaborate Spirit Essence of the invention, help those skilled in the art are practical, are fully understood by the present invention
Complete technical solution, technical solution of the present invention is described in detail below in conjunction with embodiment and attached drawing:
The technical scheme adopted by the invention is as follows: a kind of packaging method of QFN fingerprint recognition chip, process flow chart such as 1 figure
It is shown, specific as follows:
S1: the lead frame back side mounts film carrier;
S2:QFN fingerprint recognition chip sticks in lead frame by silver paste;
S3: silver paste solidification;
S4: plasma cleaning;
S5: routing bonding is carried out to the golden finger of QFN fingerprint recognition chip and lead frame, ground connection welding platform 13 with bonding wire;
S6: plastic packaging forms strip-shaped product;
S7: removing loads film;
S8: solidify after strip-shaped product;
S9: after strip-shaped product baking, half cutting process is carried out to company's muscle where golden finger using resin blade, forms pin;
S10: the burr that hemisect generates is polished;
S11: it is rinsed using the residue glue of alkali electroless adhesive remover removal strip-shaped product, then with high pressure water;
S12: strip-shaped product is flattened, is toasted;
S13: grinding is carried out to plastic packaging face and forms abradant surface;
S14: the film coating process of strengthening membrane is carried out in abradant surface;
S15: the pin surface on lead frame is carried out tin plating;
S16: company's muscle of lead frame is cut off;
S17: strip test is carried out to strip-shaped product;
S18: it is marked at the back side of strip-shaped product with radium-shine type information;
S19: after strip-shaped product baking, the strengthening membrane of abradant surface is removed;
S20: it is cut by laser and strip-shaped product is cut into a plurality of single packaging bodies.
Embodiment
A kind of encapsulating structure of QFN fingerprint recognition chip of the present invention, as shown in fig.2, being its diagrammatic cross-section, the finger
Line chip package includes the plastic part 3 of lead frame 10, chip 2 and the package lead frame 10 and chip 2, thickness
Range 300um or less.The lead frame 10 includes chip carrier 11, even muscle and golden finger, and chip carrier 11 is arranged in lead frame
The intermediate region of frame 10.Lead frame 10 is the carrier of chip 2, is mainly used for connecting 2 internal circuit of chip and exterior PC B, core
Piece 2 is fitted on the lead frame 10 and fixes, and chip 2 is arranged in chip carrier 11 and is fixedly connected with chip carrier 11, core
Piece 2 is that silicon substrate fingerprint chip is also possible to the chip of other materials or other function in other embodiments.
The even frame that muscle is made of metal material, including even muscle 121, even muscle 122, even muscle 123, even 124 four edges of muscle
And connect muscle 125, even muscle 126, it is the structure that in lead frame all components are risen with physical connection, is lead as shown in Figure 3A
The structural schematic diagram of frame.Even muscle 121, even muscle 122, even muscle 123, be even provided at least one golden finger on muscle 124, scheme
In 3A signal by even muscle any three side (such as connect muscle 122, even muscle 123, even muscle 124) on golden finger by even muscle 125 with
The chip carrier 11 is fixedly connected, rather than is consolidated by even muscle to the chip carrier 11 in four corners of lead frame
It is fixed, the cutting difficulty of the fingerprint chip package can be effectively reduced, improve the efficiency of single separation of encapsulation.These golden finger shapes
At encapsulation leg, for reinforcing encapsulating the connection of monomer and PCB.It is described for being electrically connected that there are also the golden fingers of company's muscle 121
Chip 2 and the fingerprint chip package external structure are not used in the fixed chip carrier 11.These golden fingers finally cut to be formed
Pin.
The golden finger each even muscle 121, even muscle 122, even muscle 123, the quantity even on muscle 124 are set according to actual needs
It sets, in embodiments of the present invention, it is not identical that the golden finger on each side connects the quantity on muscle, as shown in Figure 3.Every company's muscle up to
Few two golden fingers are connect with the chip carrier 11, and the head and the tail of every company's muscle are arranged in, and are also provided with several therebetween and are led
Discharge orifice I 151.Deflector hole I 151 can be in the arbitrary shapes such as linear type, circle, rectangular.When for plastic packaging, plastic packaging material is in lead frame
Frame front and back sides are swimmingly flowed, and the reliability of the combination of plastic packaging layer and lead frame 10 is enhanced.It is in deflector hole I 151 in Fig. 3 A
Rectangular signal, setting connect between muscle 125, even muscle 126 or between adjacent even muscle 126 adjacent.Rectangular deflector hole I 151 to the greatest extent may be used
Can be big, plastic packaging material can be made quickly to flow in lead frame front and back sides, save the plastic packaging time.The deflector hole on three company's muscle
I 151 development length to chip direction differs.Connect the prolonging to chip direction of the deflector hole I 151 on muscle 122, even muscle 124
Elongation is greater than the development length to chip direction of golden finger II 142, even the deflector hole I 151 on muscle 123 to chip direction
Development length be less than golden finger III 143 the development length to chip direction, with obtain be suitble to fingerprint chip it is as big as possible
Chip carrier 11, in favor of improve QFN fingerprint chip product utilize area.
Golden finger I 141 is arranged on company's muscle 121 of lead frame 10, and the even muscle 121 is used to support the lead frame
10 and the chip carrier 11 and the chip 2 are electrically connected by golden finger I 141.The golden finger II 142, golden finger III
143, even muscle 125, even muscle 126 lead frame 10 is set remaining connect muscle 122, even muscle 123, even on muscle 124, golden finger II
142 are connected by even muscle 125 and chip carrier 11, and are electrically connected chip 2.Golden finger I 141 even on muscle 121 is small and dense, figure
Illustrated in 3A with 12 golden fingers.Company's muscle 122, even muscle 123, the even golden finger II 142 on muscle 124, golden finger III 143 are than golden hand
Refer to I 141 it is roomy very much.Even the length of muscle 125 is short and thick as far as possible, to improve its intensity, avoids due to the area of chip 2 is larger
Chip carrier 11 is tilted, the coplanarity of lead frame is improved.
Deflector hole II 152 is set to the outer avris on the left side of chip carrier 11, right side, three side of rear side, end to end to surround core
Piece 2.Deflector hole II 152 can be in the arbitrary shapes such as linear type, circle, rectangular.When for plastic packaging, plastic packaging material lead frame just
Reverse side swimmingly flows, and enhances the reliability of the combination of lead frame 10.Shown with deflector hole II 152 in linear type in Fig. 3 A
Meaning.The distribution of linear type deflector hole II 152 is wide, number is more, not only plastic packaging material can be made quickly to flow in lead frame front and back sides, especially
It is plastic packaging material filling can be made more abundant on four angles.
The left side of chip carrier 11 and golden finger II 142, company's muscle 125, the even muscle 126, deflector hole I 151, deflector hole II on right side
152 are symmetrical arranged.
Chip 2 is fixed on chip carrier 11, at least one aluminium pad 21, the aluminium pad 21 are provided on the chip 2
Connect the golden finger on muscle by bonding wire I 23 and at least one to be electrically connected.Wherein, using bonding wire I 23 by the aluminium on the chip 2
Pad 21 connects one to one with the golden finger I 141, and the golden finger II 142 in remaining sides is fixedly connected with the chip carrier 11,
Electric signal is transmitted to the structure of external pcb board by being electrically connected with golden finger I 141 by the chip 2.
Ground connection welding platform 13 is set to the forward edge of chip carrier 11 nearby and is electrically connected by II 24 selectivity of bonding wire
Connect the aluminium pad 21 on the chip 2.The material for being grounded welding platform 13 is copper, and surface has silver coating, and silver coating is conducive to
Bonding wire II 24 is fixedly connected with ground connection welding platform 13, enhances stability.
In other embodiments of the invention, pass through quantity and the row of the golden finger that bonding wire I 23 is connect with the aluminium pad 21
Column mode can be with flexible choice, can be with continuous arrangement also with dispersed arrangement, and quantity does not limit a row.
Before plastic part injection molding, the embodiment of the present invention is not handled the even muscle first, after the completion of plastic part injection molding,
Since even the template of the muscle back side and injection molding is in the same plane, the even muscle back side is not injection molding material covering, in plastic packaging
Half-etching can be carried out to the even muscle after the completion of part injection molding, the thickness of lead frame be thinned, etched line 191 is half-etched areas
With the markings of half non-etch areas.
According to client's different demands, lead frame 10 is cut into different shapes, such as round, rectangular, oval, figure
Rounded rectangular of laser cut line 192 in 3A.
Particularly, the resin knife of 0.44 mm of thickness is used after the completion of plastic part is molded company's muscle where golden finger
Piece carries out hemisect, as shown in Figure 3B, makes to be electrically connected between golden finger and adjacent a plurality of single packaging bodies and is disconnected, then
A plurality of single packaging bodies are formed along laser cut line 192 by laser, as shown in Figure 3 C, are amplified for the part I that pin is formed
Schematic diagram, golden finger I 141, golden finger II 142, golden finger III 143 section form step-like pin 128, shown in Fig. 2, be
The schematic diagram of the encapsulating structure of QFN fingerprint chip.Pin 128 is after tin plating, when being welded with exterior PC B (printed wiring board),
Scolding tin filling can reinforce the reliability of pin and PCB welding in step clearance, avoid upper plate from falling off problem, can be applied to
In the high fingerprint recognition product of the reliability requirements such as military project, automotive-type.
A kind of packaging method of QFN fingerprint recognition chip of the present invention, specific implementation step are as follows:
Step 1: the lead frame back side mounts film carrier.
The loading film wide with whole lead frame and smooth pad pasting template are selected, is pasted using high temperature laminator
Film, pad pasting temperature are 200oC。
The loading film of this method selection has three-decker: sustained release layer, adhesive layer and Primary layer.By testing ratio for several times
Right, the material of adhesive layer is improved polyimide material, because polyimides Polymer Materials ' Structure has preferable high temperature
Stability is able to bear the plasma cleaning process of subsequent high-energy without destroying.The range of viscosities of adhesive layer is higher than
20N/cm, 190 ~ 200 DEG C of pad pasting temperature range, while the loading film is also equipped with high temperature (200 DEG C) elasticity modulus, 20 DEG C whens, stretch
Intensity is 200MPa, and 200 DEG C of whens are greater than 100MPa, can be influenced to avoid occurring the shake of golden finger in subsequent bonding process
Routing quality.
It before pad pasting, need to convey the lead frame in pad pasting template, the sustained release layer for loading film then be peeled off, by adhesive layer
Material is fitted in the back side of lead frame.It after pad pasting, needs to detect whether bubble occur, if there is bubble, gas exhaust treatment need to be done.
Step 2: QFN fingerprint recognition chip sticks in lead frame.
Apply silver paste on the chip carrier 13 of lead frame 10, silver paste smears shape and is generally " rice word " shape, " cross " shape, double
Chip is bonded on chip carrier 13, the aluminium of QFN fingerprint recognition chip by Y-shaped etc. using Besi ESEC2100 chip attachment machine
Pad 21 is set to I 141 side of golden finger nearby.And the side of the chip carrier 11 in the side of the aluminium pad 21 of QFN fingerprint recognition chip
Edge smears silver paste, forms the ground connection welding platform 13 of linear type, meanwhile, golden finger I 141 also smears silver paste to routing region.
Chip pastes parameter:<1>chip is bonded time (bond time): 50 ~ 150 milliseconds,<2>chip adhesive force
(bond force): 0.5 ~ 1 newton,<3>chip position (die placement): +/- 30 microns, the climbing of<4>silver paste is high
: less than 75% chip thickness is spent, is 0.8 Newtonian time in chip adhesive force, the chip fitting time only needs 100 milliseconds.
Step 3: silver paste solidifies.
In order to guarantee stability that chip is pasted, need to solidify silver paste using baking oven, curing environment is nitrogen
(N2), condition of cure: 175 degrees Celsius are warming up within 30 minutes, soaking time is 30 ~ 60 minutes, and subsequent furnace is cooled to 50 DEG C.
It is bonded intensity between the chip carrier 13 and silver paste of reinforced leads frame, it can be in advance to the chip of lead frame
Seat 13 carries out blasting treatment.Specifically:
By the positive face paste high temperature resistant protective glue band of whole lead frame, only exposed chip seat 13, fitly parallel by lead frame
It is arranged on sand blasting jig and fixed.High temperature resistant protective glue band is formed by silicon rubber bonding glass fiber cloth, and bottom is coated with high temperature
Speciality silica gel is resistant to 500 ~ 800 degree of high temperature, and does not stay residue glue after removing.
The sand blasting jig for carrying lead frame is delivered in abrasive blast equipment again, is heated 5 ~ 10 minutes, temperature rises to
400oC~450oC makes the firmness change of lead frame to the 80% of most initial hardness.Using 200# corundum powder, in certain pressure
Under conditions of power and speed, the surface of the chip carrier 13 of lead frame is hit, the rough surface of anisotropic is formed, surface is thick
Rugosity Ra:6 ~ 20 micron, because surface roughness is micron order, larger, the bond strength of chip carrier 13 and silver paste is obviously obtained
Enhancing.
Step 4: plasma cleaning.
The purpose of plasma cleaning is removal lead frame oxidation on metal surface object and pollutant, uses Vision etc.
Ion Cleaning machine uses argon gas (Ar) and hydrogen (H2) it is used as purge gas.Plasma cleaning is to utilize argon gas and hydrogen shape
Lead frame surface is bombarded at plasmoid, removes surface contaminant, while utilizing hydrionic reproducibility, removal
Its oxide, reaches cleaning purpose.Be after plasma cleaning it is dry, do not need to be dried again can be sent to it is next
Procedure.Plasma cleaning needs two work steps that could complete, step 1: power: 600watt, time: 10s;Step 2: function
Rate: 300 watt, time: 15s.
Step 5: being beaten with bonding wire the golden finger of QFN fingerprint recognition chip and lead frame, ground connection welding platform 13
Line bonding.
Compared with golden finger I 141, welding platform 13 is grounded closer to the aluminium pad 21 of QFN fingerprint recognition chip, first uses bonding wire
Aluminium pad 21 and ground connection welding platform 13 to QFN fingerprint recognition chip carry out ground connection routing.
The loading film at the lead frame back side has high temperature (200 DEG C) elasticity modulus, and tensile strength is 200MPa at 20 DEG C,
It is greater than 100MPa at 200 DEG C, reduces the golden finger jitter amplitude in bonding process, improve routing quality.It observes simultaneously,
Chip of the big and thin lead frame Jing Guo step 4 pastes the bonding process with this step, and the loading film of fitting prevents lead frame
The torsional deformation of frame, occurring lead frame not even, muscle problem on deformation, lead frame have sustained huge pulling and impact force,
This lays the foundation for subsequent cutting, helps to improve the yield of product.
Step 6: plastic packaging, forms strip-shaped product.
The above-mentioned plastic packaging core of die press technology for forming (C-mold) plastic packaging is used using resin plastic-sealed material on the surface of lead frame
Piece and bonding wire and lead frame form strip-shaped product.
Die press technology for forming parameter:<1>resin plastic-sealed material: EMC,<2>plastic packaging temperature: 160 ~ 180oC,<3>plastic packaging pressure
Power: 6 ~ 16 tons,<4>curing time: 100 ~ 150 seconds,<5>product plastic packaging thickness: greater than product design thickness, the modeling of<6>product
It seals thickness error to control: +/- 15 microns.If product plastic packaging is with a thickness of 450 microns, plastic packaging temperature is 175oC, plastic packaging pressure: 6
Ton, curing time: 120 seconds;Because the lead frame of QFN fingerprint recognition chip is larger, deflector hole I 151, deflector hole II 152 are set
Setting flows plastic packaging material swimmingly in lead frame front and back sides, enhances the reliability of plastic packaging layer.Especially on four angles
Deflector hole II 152 can make plastic packaging material filling more abundant.
Step 7: removing loads film.
After 180 DEG C, baking in 4 hours, encapsulating products are adsorbed on vacuum platform, is opened using tweezers and loads film one
Angle, then gently at the uniform velocity remove the loading film (including adhesive layer and Primary layer) at the lead frame back side manually along corner, can also be with
Using full-automatic film stripping machine will load film (including adhesive layer and Primary layer) take off from.
Step 8: solidifying (PMC) after strip-shaped product.
Product plastic packaging material after the completion of plastic packaging shapes also needs further to solidify, and discharges interiors of products stress.
Cure parameter after product:<1>solidification temperature afterwards: 170 ~ 180oC,<2>rear curing time: 2 ~ 8 hours.Generally
Ground, rear solidification temperature are 175oC, rear curing time need 5 hours.
Step 9: carrying out half cutting process, shape to company's muscle where golden finger using resin blade after strip-shaped product baking
At pin.
Since even muscle is metal material, encapsulation plastic part is compared, is not easy to be cut.Therefore, it is necessary to will complete injection molding work
Strip-shaped product after sequence carries out the baking of 5 DEG C, 8 hours, removes lead frame using 0.44mm thickness resin blade (Blade) later
One half thickness of company's muscle of four, the back side frame of frame 10, exposes unoxidized copper, is B-B section view in Fig. 3 A as described in Fig. 3 B
Figure, this part connect muscle in the pin for forming packaging body finally by laser cutting, and remaining even muscle is connect for keeping with even muscle
Fingerprint chip package in each component part physical structure;Simultaneously because the presence of plastic part, ensure that stable structure.
Step 10: the burr that hemisect generates is polished.
10 microns of depth, polishing force 0.027Nm, 3000 revs/min of revolving speed are polished using sponge grinding wheel to carry out to step 1
The burr generated when cutting is polished.
Step 11: being rinsed using the residue glue of alkali electroless adhesive remover removal strip-shaped product, then with high pressure water.
Strip-shaped product has part residue glue after injection molding on lead frame 10, need to remove using chemical degumming agent.Chemistry
Adhesive remover ingredient is strong basicity mixed liquor, is mainly made of polar organic solvent, highly basic and/or water etc., can be effective
The residue glue on strip-shaped product is removed, meanwhile, for no corrosions such as substrates such as metallic aluminium, copper.The mixed liquor is usually 50% single
Ethanol amine and 40%N- methyl pyrrolidone.Chemical degumming agent is warming up to 85 DEG C of temperature, above-mentioned strip-shaped product is impregnated 30 points
Clock is rinsed with 50 kilograms per square centimetres high pressure water of high-pressure water pressure again later.
Step 12: strip-shaped product flattens, baking.
Strip-shaped product successively stacks, and every four change for one, apart from top to bottom with the steel plate not less than strip-shaped product area, layer by layer
It stacks, is suppressed on it with 10 kilograms of briquettings, flatten strip-shaped product stress;Enter baking oven later, 150 DEG C of 2 hours perseverances are set
Temperature baking, with abundant volatile chemical liquid medicine residual.
Step 13: carrying out grinding to plastic packaging face forms abradant surface.
Strip-shaped product is carried out thinned and is ground according to client's roughness requirements using milling apparatus to plastic packaging face, and is formed and ground
Flour milling.
Polishing reduction process parameter:<1>emery wheel revolving speed: 800 ~ 3000RPM<2>grinding thickness control errors: +/- 10
Micron.
This technique is to make product integral thickness reach product design requirement by technique for grinding product.Above-mentioned QFN
The polishing target thickness of the plastic packaging layer of the encapsulating structure of fingerprint recognition chip is 270 microns, can choose emery wheel revolving speed:
2000RPM.After polishing, the thickness of packaging body is in 600um ~ 800um.
Step 14: carrying out the film coating process of strengthening membrane in abradant surface.
It is ground due to plastic packaging face and is thinned and loses the support for connecting muscle between pin, product is easily broken.It has ground in plastic packaging face
The stronger protection of the strengthening membrane 40 injection molding abradant surface of toughness is used at rear.The protection of strengthening membrane 40 can reduce strip finished product subsequent technique
Difficulty, avoid the mechanical scuffing of abradant surface and chemical contamination, the protection of strengthening membrane 40 can also improve the toughness of strip-shaped product, keep away
Exempt from its chipping risk in technical process.
Strengthening membrane 40 has two layers, including semi-solid preparation resin layer 41 and base 42, as shown in Figure 4.The material of base 42 is
Polyimde(polyimides), PEN(polyethylene naphthalate) etc., 20 microns ~ 30 microns of thickness, have it is very good
Impact resistance and tear resistance.For the wear resistence for reinforcing PEN, it is resistance to that very thin one layer is arranged in the outside and/or inside of base 42
It grinds polyurethane and forms wearing layer 43, illustrated in Fig. 4 with outside wearing layer 43, hardness can further prevent film in 2H or 3H
Face is scratched.Semi-solid preparation resin layer 41 is to have sticking PSA, silicone adhesive(silicone adhesive) etc., thickness 5 is micro-
18 microns of rice ~ through-hole.41 side of semi-solid preparation resin layer of strengthening membrane 40 is bonded with injection molding abradant surface, can be soft under heating pressurization
Change, solidification can be reacted after cooling, the reliable binding force of the plastic packaging layer of strengthening membrane and product can be obtained, improve the envelope of product
Fill yield.
Step 15: being carried out to the pin surface on lead frame tin plating.
On company's muscle surface after strip-shaped product by electrochemical reaction to be plated to tin to hemisect, guarantee that the product to be formed draws
Foot has anti-corrosive properties, electric conductivity, solderability, aesthetics.Because the abradant surface of strip-shaped product posts strengthening membrane, its toughness is enhanced,
During tin plating technique, the chipping risk of strip-shaped product is reduced, meanwhile, avoid the mechanical scuffing of abradant surface and change
Learn pollution.
Step 16: company's muscle of cutting lead frame, retains plastic-sealed body.
All components are connected due to connecting muscle, all components can not carry out strip test by electrical short.
QFN class product carries out strip test and needs to carry out the company's muscle for the golden finger end for having electric connection with chip by etching technics
It is fully etched, so that each component part inside fingerprint chip package is disconnected electric connection, to avoid the short circuit between pin, to described
Fingerprint chip package carries out strip test, but plastic packaging body portion retains.
Step 17: carrying out strip test to strip-shaped product.
Testing procedure: after vacuum chuck draws strip-shaped product, being placed on test platform, connects pins of products with test probe
Touching, tests product by program prepared in advance, meeting test program requirement is then qualified products, is otherwise bad production
Product are retested or are scrapped.
Step 18: in the radium-shine type information label in the back side of strip-shaped product.
Information flag is stamped on the back side of strip-shaped product by customer requirement.
Step 19: the strengthening membrane of abradant surface is removed after strip-shaped product baking.
After 180 DEG C of via through holes, baking in 4 hours, strip-shaped product is adsorbed on vacuum platform, opens strengthening membrane using tweezers
One jiao, then gently strengthening membrane is at the uniform velocity removed manually along corner, it observes under the microscope, without discovery residue glue on strip-shaped product.
Can also using full-automatic film stripping machine by strengthening membrane take off from.
Strip-shaped product is cut into a plurality of single packaging bodies Step 20: being cut by laser.
The cutting line at the back side of lead frame 10 is cut by laser, strip-shaped product is pressed into customer requirement excision forming, it can
To be round, ellipse, square fillet etc., thickness 300um packaging body below is formed.After connecting muscle hemisect in step 1
Form step-like pin after laser is further cut, as shown in figure 5, its with exterior PC B (printed wiring board) weld when,
Scolding tin filling can reinforce the reliability of welding, it is high to can be applied to the reliability requirements such as military project, automotive-type in step clearance
In fingerprint recognition product.
At the beginning due to a kind of packaging method of the encapsulating structure of QFN fingerprint recognition chip of the present invention, just pacify in step 1
The row lead frame back side mounts film carrier, and lead frame is made to have sustained chip bonding and the huge pulling and punching in bonding process
Power is hit, lead frame is made not occur significantly deforming in entire encapsulation process, in last cutting process, can accurately be cut
Strip-shaped product reduces lead frame and cuts inclined, product short-circuit risks, improves product yield.
Above specific embodiment has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
Describe in detail it is bright, it should be understood that the above is only a specific embodiment of the invention, the protection that is not intended to limit the present invention
Range.All within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done, should be included in this hair
Within bright protection scope.
Claims (10)
1. a kind of packaging method of QFN fingerprint recognition chip, which is characterized in that its technique includes the following steps:
Step 1: the lead frame back side mounts film carrier;
Step 2: QFN fingerprint recognition chip is sticked on the leadframe die seat in step 1 by silver paste, QFN fingerprint is known
The aluminium pad of other chip is set to the side of golden finger I nearby;
Step 3: silver paste solidifies, the connection of QFN fingerprint recognition chip and lead frame is reinforced;
Step 4: plasma cleaning removal lead frame oxidation on metal surface object and pollutant;
Step 5: carrying out routing key to the golden finger of QFN fingerprint recognition chip and lead frame, ground connection welding platform with bonding wire
It closes;
Step 6: the surface of lead frame using the above-mentioned QFN fingerprint recognition chip of die press technology for forming plastic packaging and bonding wire and
Lead frame forms strip-shaped product and its plastic packaging face;
Step 7: removing the loading film at the strip-shaped product back side after baking;
Step 8: will complete to solidify plastic packaging removes the strip-shaped product progress for loading film again after, and discharge strip interiors of products stress;
Step 9: carrying out half cutting process to company's muscle where golden finger using resin blade, formation is drawn after strip-shaped product baking
Foot;
Step 10: the burr that hemisect generates is polished;
Step 11: being rinsed using the residue glue of alkali electroless adhesive remover removal strip-shaped product, then with high pressure water;
Change Step 12: strip-shaped product is successively stacked and to form plural number, stack layer by layer, then be not less than strip-shaped product area steel
Plate is apart from top to bottom, and the top is flattened strip-shaped product with briquetting, the baking of entering to dry case constant temperature;
Step 13: strip-shaped product is carried out thinned and is ground, shape according to client's roughness requirements using milling apparatus to plastic packaging face
At abradant surface;
Step 14: carrying out the film coating process of strengthening membrane in abradant surface;
Step 15: being carried out to the pin surface on lead frame tin plating;
Step 16: company's muscle of cutting lead frame;
Step 17: carrying out strip test to strip-shaped product;
Step 18: in the radium-shine type information label in the back side of strip-shaped product;
Step 19: the strengthening membrane of abradant surface is removed after strip-shaped product baking;
Strip-shaped product is cut into a plurality of single packaging bodies Step 20: being cut by laser.
2. the packaging method of QFN fingerprint recognition chip according to claim 1, which is characterized in that in step 1, the dress
Film carrier includes sustained release layer, adhesive layer and Primary layer, and the material of the adhesive layer is improved polyimide material, range of viscosities
Higher than 20N/cm, tensile strength is 200MPa at 190 ~ 200 DEG C of pad pasting temperature range, 20 DEG C, and 200 DEG C of whens are greater than 100MPa.
3. the packaging method of QFN fingerprint recognition chip according to claim 1, which is characterized in that in step 2, further include
Silver paste is smeared at the edge of the chip carrier 11 of the side of the aluminium pad of QFN fingerprint recognition chip, the ground connection welding for forming linear type is flat
Platform, meanwhile, golden finger I also smears silver paste to routing region.
4. the packaging method of QFN fingerprint recognition chip according to claim 1, which is characterized in that in step 2, the core
Piece pastes parameter:<1>chip is bonded time (bond time): 50 ~ 150 milliseconds,<2>chip adhesive force (bond force):
0.5 ~ 1 newton,<3>chip position (die placement): +/- 30 microns,<4>silver paste climbing height: less than 75% chip
Thickness.
5. the packaging method of QFN fingerprint recognition chip according to claim 1, which is characterized in that in step 3, further include
The blasting treatment that the chip carrier of lead frame carries out in advance, specifically:
By the positive face paste high temperature resistant protective glue band of whole lead frame, only exposed chip seat, by lead frame fitly parallel
Cloth is on sand blasting jig and fixed, and the high temperature resistant protective glue band is formed by silicon rubber bonding glass fiber cloth, and bottom is coated with height
Warm speciality silica gel is resistant to 500 ~ 800 degree of high temperature, and does not stay residue glue after removing;
The sand blasting jig for carrying lead frame is delivered in abrasive blast equipment again, is heated 5 ~ 10 minutes, temperature rises to 400oC~
450oC makes the firmness change of lead frame to the 80% of most initial hardness;
The surface of the chip carrier of lead frame, shape are hit under conditions of certain pressure and speed using 200# corundum powder
At the rough surface of anisotropic, surface roughness Ra: 6 ~ 20 microns.
6. the packaging method of QFN fingerprint recognition chip according to claim 1, which is characterized in that in step 4, using argon
Gas (Ar) and hydrogen (H2) it is used as purge gas, the plasma cleaning needs two work steps: step 1: power: 600watt,
Time: 10s;Step 2: power: 300 watt, time: 15s.
7. the packaging method of QFN fingerprint recognition chip according to claim 1, which is characterized in that in step 6, the mould
Molded technological parameter:<1>resin plastic-sealed material: EMC,<2>plastic packaging temperature: 160 ~ 180oC,<3>plastic packaging pressure: 6 ~ 16
Ton,<4>curing time: 100 ~ 150 seconds,<5>product plastic packaging thickness: greater than product design thickness,<6>product plastic packaging thickness
Control errors: +/- 15 microns.
8. the packaging method of QFN fingerprint recognition chip according to claim 1, which is characterized in that in step 9, use
Resin blade is with a thickness of 0.44mm.
9. the packaging method of QFN fingerprint recognition chip according to claim 1, which is characterized in that described in step 14
Strengthening membrane includes semi-solid preparation resin layer and base, and the semi-solid preparation resin layer side of strengthening membrane is bonded with injection molding abradant surface.
10. the packaging method of QFN fingerprint recognition chip according to claim 1, which is characterized in that in step 2 ten, institute
It states strip-shaped product excision forming and forms step-like pin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810842406.2A CN109037084A (en) | 2018-07-27 | 2018-07-27 | A kind of packaging method of QFN fingerprint recognition chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810842406.2A CN109037084A (en) | 2018-07-27 | 2018-07-27 | A kind of packaging method of QFN fingerprint recognition chip |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109037084A true CN109037084A (en) | 2018-12-18 |
Family
ID=64646134
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810842406.2A Pending CN109037084A (en) | 2018-07-27 | 2018-07-27 | A kind of packaging method of QFN fingerprint recognition chip |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109037084A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110085580A (en) * | 2019-05-27 | 2019-08-02 | 星科金朋半导体(江阴)有限公司 | A kind of chip-packaging structure and its packaging method being implanted into damper |
CN110534496A (en) * | 2019-08-13 | 2019-12-03 | 中山市华南理工大学现代产业技术研究院 | A kind of GaN base radio-frequency devices and its packaging method |
WO2022052210A1 (en) * | 2020-09-10 | 2022-03-17 | 安徽龙芯微科技有限公司 | Manufacturing method for packaging structure |
CN114367497A (en) * | 2020-10-14 | 2022-04-19 | 大族激光科技产业集团股份有限公司 | Method for removing residual epoxy resin glue on golden finger of display device |
CN117594453A (en) * | 2024-01-18 | 2024-02-23 | 瑞能微恩半导体(上海)有限公司 | Packaging method of transistor packaging structure and transistor packaging structure |
Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1012773A (en) * | 1996-06-24 | 1998-01-16 | Matsushita Electron Corp | Resin-sealed semiconductor device and its manufacture |
JP2001077278A (en) * | 1999-10-15 | 2001-03-23 | Amkor Technology Korea Inc | Semiconductor package, lead frame thereof, manufacture of semiconductor package and mold thereof |
US6396129B1 (en) * | 2001-03-05 | 2002-05-28 | Siliconware Precision Industries Co., Ltd. | Leadframe with dot array of silver-plated regions on die pad for use in exposed-pad semiconductor package |
US6700185B1 (en) * | 1999-11-10 | 2004-03-02 | Hitachi Chemical Co., Ltd. | Adhesive film for semiconductor, lead frame and semiconductor device using the same, and method for manufacturing semiconductor device |
US20040097017A1 (en) * | 2002-11-15 | 2004-05-20 | Renesas Technology Corp. | Method of manufacturing a semiconductor device |
US20050245002A1 (en) * | 2004-04-30 | 2005-11-03 | Tadatoshi Danno | Method of manufacturing a semiconductor device and used for the same |
JP2006295064A (en) * | 2005-04-14 | 2006-10-26 | Hitachi Chem Co Ltd | Adhesive film for semiconductor, lead frame using the same, semiconductor apparatus and method for manufacturing the same |
US20060255438A1 (en) * | 2005-05-10 | 2006-11-16 | Kouji Omori | Lead frame and resin-encapsulated semiconductor device |
KR20070082410A (en) * | 2006-02-16 | 2007-08-21 | 삼성전자주식회사 | Lead frame improving warpage and semiconductor package using the same |
US20100119759A1 (en) * | 2007-03-27 | 2010-05-13 | Nitto Denko Corporation | Adhesive film for producing semiconductor device |
CN101859713A (en) * | 2009-04-10 | 2010-10-13 | 日月光半导体制造股份有限公司 | Advanced quad flat non-leaded package and manufacture method thereof |
CN103035602A (en) * | 2011-09-29 | 2013-04-10 | 瑞萨电子株式会社 | Semiconductor device |
EP2636712A1 (en) * | 2012-03-07 | 2013-09-11 | Nitto Denko Corporation | Pressure-sensitive adhesive tape for resin encapsulation and method for producing resin encapsulation type semiconductor device |
CN103515261A (en) * | 2012-06-27 | 2014-01-15 | 瑞萨电子株式会社 | Method for manufacturing semiconductor device, and semiconductor device |
US20150155227A1 (en) * | 2011-02-14 | 2015-06-04 | Renesas Electronics Corporation | Semiconductor device |
CN105575939A (en) * | 2014-10-29 | 2016-05-11 | 恩智浦有限公司 | Leadless semiconductor device and method of making thereof |
CN107078122A (en) * | 2017-01-22 | 2017-08-18 | 深圳市汇顶科技股份有限公司 | A kind of fingerprint chip package and processing method |
CN208548346U (en) * | 2018-07-27 | 2019-02-26 | 星科金朋半导体(江阴)有限公司 | A kind of encapsulating structure of QFN fingerprint chip |
-
2018
- 2018-07-27 CN CN201810842406.2A patent/CN109037084A/en active Pending
Patent Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1012773A (en) * | 1996-06-24 | 1998-01-16 | Matsushita Electron Corp | Resin-sealed semiconductor device and its manufacture |
JP2001077278A (en) * | 1999-10-15 | 2001-03-23 | Amkor Technology Korea Inc | Semiconductor package, lead frame thereof, manufacture of semiconductor package and mold thereof |
US6700185B1 (en) * | 1999-11-10 | 2004-03-02 | Hitachi Chemical Co., Ltd. | Adhesive film for semiconductor, lead frame and semiconductor device using the same, and method for manufacturing semiconductor device |
US6396129B1 (en) * | 2001-03-05 | 2002-05-28 | Siliconware Precision Industries Co., Ltd. | Leadframe with dot array of silver-plated regions on die pad for use in exposed-pad semiconductor package |
US20040097017A1 (en) * | 2002-11-15 | 2004-05-20 | Renesas Technology Corp. | Method of manufacturing a semiconductor device |
US20050245002A1 (en) * | 2004-04-30 | 2005-11-03 | Tadatoshi Danno | Method of manufacturing a semiconductor device and used for the same |
JP2006295064A (en) * | 2005-04-14 | 2006-10-26 | Hitachi Chem Co Ltd | Adhesive film for semiconductor, lead frame using the same, semiconductor apparatus and method for manufacturing the same |
US20060255438A1 (en) * | 2005-05-10 | 2006-11-16 | Kouji Omori | Lead frame and resin-encapsulated semiconductor device |
KR20070082410A (en) * | 2006-02-16 | 2007-08-21 | 삼성전자주식회사 | Lead frame improving warpage and semiconductor package using the same |
US20100119759A1 (en) * | 2007-03-27 | 2010-05-13 | Nitto Denko Corporation | Adhesive film for producing semiconductor device |
CN101859713A (en) * | 2009-04-10 | 2010-10-13 | 日月光半导体制造股份有限公司 | Advanced quad flat non-leaded package and manufacture method thereof |
US20150155227A1 (en) * | 2011-02-14 | 2015-06-04 | Renesas Electronics Corporation | Semiconductor device |
CN103035602A (en) * | 2011-09-29 | 2013-04-10 | 瑞萨电子株式会社 | Semiconductor device |
EP2636712A1 (en) * | 2012-03-07 | 2013-09-11 | Nitto Denko Corporation | Pressure-sensitive adhesive tape for resin encapsulation and method for producing resin encapsulation type semiconductor device |
CN103515261A (en) * | 2012-06-27 | 2014-01-15 | 瑞萨电子株式会社 | Method for manufacturing semiconductor device, and semiconductor device |
CN105575939A (en) * | 2014-10-29 | 2016-05-11 | 恩智浦有限公司 | Leadless semiconductor device and method of making thereof |
CN107078122A (en) * | 2017-01-22 | 2017-08-18 | 深圳市汇顶科技股份有限公司 | A kind of fingerprint chip package and processing method |
CN208548346U (en) * | 2018-07-27 | 2019-02-26 | 星科金朋半导体(江阴)有限公司 | A kind of encapsulating structure of QFN fingerprint chip |
Non-Patent Citations (1)
Title |
---|
王海军: "《热喷涂实用技术》", 31 May 2006, 国防工业出版社, pages: 45 - 51 * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110085580A (en) * | 2019-05-27 | 2019-08-02 | 星科金朋半导体(江阴)有限公司 | A kind of chip-packaging structure and its packaging method being implanted into damper |
CN110085580B (en) * | 2019-05-27 | 2024-05-24 | 星科金朋半导体(江阴)有限公司 | Chip packaging structure of implanted damper and packaging method thereof |
CN110534496A (en) * | 2019-08-13 | 2019-12-03 | 中山市华南理工大学现代产业技术研究院 | A kind of GaN base radio-frequency devices and its packaging method |
WO2022052210A1 (en) * | 2020-09-10 | 2022-03-17 | 安徽龙芯微科技有限公司 | Manufacturing method for packaging structure |
CN114367497A (en) * | 2020-10-14 | 2022-04-19 | 大族激光科技产业集团股份有限公司 | Method for removing residual epoxy resin glue on golden finger of display device |
CN114367497B (en) * | 2020-10-14 | 2024-02-06 | 大族激光科技产业集团股份有限公司 | Method for removing residual epoxy resin glue of golden finger of display device |
CN117594453A (en) * | 2024-01-18 | 2024-02-23 | 瑞能微恩半导体(上海)有限公司 | Packaging method of transistor packaging structure and transistor packaging structure |
CN117594453B (en) * | 2024-01-18 | 2024-05-28 | 瑞能微恩半导体(上海)有限公司 | Packaging method of transistor packaging structure and transistor packaging structure |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN109037084A (en) | A kind of packaging method of QFN fingerprint recognition chip | |
US8236612B2 (en) | Partially patterned lead frames and methods of making and using the same in semiconductor packaging | |
EP1646081B1 (en) | Method of thermocompression bonding an electric component | |
CN101473425B (en) | Production method of semiconductor device and bonding film | |
US7838391B2 (en) | Ultra thin bumped wafer with under-film | |
TWI284972B (en) | Leadframe, resin encapsulating mold, and method for making semiconductors using such leadframe and mold | |
JP5544766B2 (en) | Adhesive film laminate for semiconductor processing | |
JP2013038214A (en) | Semiconductor device manufacturing method | |
TWI375998B (en) | Adhesive sheet for producing a semiconductor device | |
JP2000040773A (en) | Resin-sealed semiconductor device and manufacture thereof | |
CN102683230A (en) | Quad flat no-lead multi-circle-arranged integrated circuit (IC) chip packaging part and production method thereof | |
CN109037083A (en) | A kind of packaging method of QFN fingerprint recognition chip | |
US20170200669A1 (en) | Process for manufacturing a package for a surface-mount semiconductor device and semiconductor device | |
CN110473853A (en) | A kind of encapsulating structure of DFN device, the packaging method without lead frame carrier and DFN device | |
JP2000040711A (en) | Resin sealed semiconductor device and manufacture thereof | |
CN117524891A (en) | High-power chip packaging bonding method and chip packaging piece | |
CN103317816B (en) | The manufacture method of bonder and adhesive base plate | |
CN102222658B (en) | Multi-circle arranged IC (integrated circuit) chip packaging member and producing method thereof | |
CN105225972B (en) | A kind of preparation method of semiconductor package | |
KR100361640B1 (en) | Fabrication method of wafer-level flip chip packages using pre-coated Anisotropic Conductive Adhesives | |
CN102074542B (en) | Double-flat integrated circuit (IC) chip packaging part with short pins and manufacturing method thereof | |
CN109002806A (en) | A kind of rear road packaging method of QFN product | |
TWI409890B (en) | Flip chip assembly process for ultra thin substrate and package on package assembly | |
CN110429058A (en) | Integrated circuit manufacture process adhesive tape and backside of wafer brush coating technique | |
EP3056303B1 (en) | Method for bonding metal bodies and bonding structure for metal bodies |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |