CN109037083A - A kind of packaging method of QFN fingerprint recognition chip - Google Patents
A kind of packaging method of QFN fingerprint recognition chip Download PDFInfo
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- CN109037083A CN109037083A CN201810842390.5A CN201810842390A CN109037083A CN 109037083 A CN109037083 A CN 109037083A CN 201810842390 A CN201810842390 A CN 201810842390A CN 109037083 A CN109037083 A CN 109037083A
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- lead frame
- qfn
- fingerprint recognition
- chip
- strip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The invention discloses a kind of packaging methods of QFN fingerprint recognition chip, belong to technical field of semiconductor chip encapsulation.Its processing step is as follows: the lead frame back side mounts film carrier；Chip is sticked in lead frame；Silver paste solidification；Plasma cleaning；Routing；Plastic packaging；It goes to load film；After solidify；Remove residue glue；Baking；Plastic packaging face is thinned and pastes strengthening membrane；Even muscle carries out strip test for cutting；Franking；Remove strengthening membrane；Excision forming.The present invention provides a kind of packaging methods for improving QFN fingerprint recognition chip packaging yield.
Description
Technical field
The present invention relates to a kind of packaging method of QFN fingerprint recognition chip, the QFN fingerprint of especially big and thin development trend
The packaging method of the encapsulating structure of identification chip, belongs to technical field of semiconductor chip encapsulation.
Background technique
Fingerprint identification technology is the technical system of a system, and the industrial chain being related to is also complex, is related to fingerprint
Chip manufacturer, fingerprint recognition Mo Zu manufacturer, fingerprinting scheme provider, mobile phone terminal manufacturer and software application quotient etc..From
Chip, encapsulation, coating, cover board, becket, mould group again to the end, all links all start to make great efforts breakthrough bottleneck.
Fingerprint recognition field generallys use Substrate encapsulation at present.Fingerprint mould group price constantly drops.As fingerprint is known
The price of other mould group constantly drops, and the profit margin of Mo Zu factory is compressed, and survival pressure also increases suddenly, reduce chip package at
This, the more cheap QFN packaging technology of use will be the following direction for needing to develop.But QFN product belongs to ultra-thin class product,
It is more and more thinner after the grinding of plastic packaging face, risk of breakage easily occurs；The thickness of its lead frame is also more and more thinner, leads to lead frame
In chip bonding and unbearable huge pulling and impact force in bonding process, to deform, therewith, in encapsulating products
In cutting process, the lead frame of deformation causes cutting difficult.Even huge deflection causes still to connect between pin, leads
Cause product short circuit, encapsulation yield decline.
Summary of the invention
It is an object of the invention to overcome the shortcomings of existing encapsulation technology, the QFN for providing a kind of raising encapsulation yield refers to
The packaging method of line identification chip.
The object of the present invention is achieved like this:
A kind of packaging method of the encapsulating structure of QFN fingerprint recognition chip of the present invention, implementation step are as follows:
Step 1: the lead frame back side mounts film carrier；
Step 2: QFN fingerprint recognition chip sticks in the chip carrier that the lead frame of loading film is posted at the back side by silver paste；
Step 3: silver paste solidifies the connection for reinforcing QFN fingerprint recognition chip and lead frame；
Step 4: plasma cleaning removal lead frame oxidation on metal surface object and pollutant；
Step 5: carrying out routing bonding with golden finger of the bonding wire to QFN fingerprint recognition chip and lead frame；
Step 6: using the above-mentioned QFN fingerprint recognition of die press technology for forming plastic packaging using resin plastic-sealed material on the surface of lead frame
Chip and bonding wire and lead frame form strip-shaped product and its plastic packaging face；
Step 7: removing the loading film at the strip-shaped product back side after baking；
Step 8: will complete to solidify plastic packaging removes the strip-shaped product progress for loading film again after, and discharge strip interiors of products stress；
Step 9: being rinsed using the residue glue of alkali electroless adhesive remover removal strip-shaped product, then with high pressure water；
Step 10: strip-shaped product flattens, baking drying；
Step 11: carrying out thinned and grinding to the plastic packaging face of strip-shaped product forms abradant surface；
Step 12: carrying out the film coating process of strengthening membrane in abradant surface；
Step 13: being carried out to the pin surface on lead frame tin plating；
Step 14: cutting abradant surface posts company's muscle of the lead frame of strengthening membrane；
Step 15: carrying out strip test to strip-shaped product；
Step 16: in the radium-shine type information label in the back side of strip-shaped product；
Step 17: the strengthening membrane of abradant surface is removed after strip-shaped product baking；
Strip-shaped product is cut into a plurality of single packaging bodies Step 18: being cut by laser.
In step 1 of the present invention, the loading film includes sustained release layer, adhesive layer and Primary layer, and the material of the adhesive layer is
Improved polyimide material, range of viscosities are higher than 20N/cm, and tensile strength is at 190 ~ 200 DEG C of pad pasting temperature range, 20 DEG C
200MPa is greater than 100MPa at 200 DEG C.
In step 2 of the present invention, the chip pastes parameter:<1>chip is bonded time (bond time): 50 ~ 150 millis
Second,<2>chip adhesive force (bond force): 0.5 ~ 1 newton,<3>chip position (die placement): +/- 30 is micro-
Rice,<4>silver paste climbing height: less than 75% chip thickness.
In step 3 of the present invention, blasting treatment is carried out in advance to the chip carrier 13 of lead frame, specifically:
By the positive face paste high temperature resistant protective glue band of whole lead frame, only exposed chip seat 13, fitly parallel by lead frame
It is arranged on sand blasting jig and fixed, high temperature resistant protective glue band is formed by silicon rubber bonding glass fiber cloth, and bottom is coated with high temperature
Speciality silica gel is resistant to 500 ~ 800 degree of high temperature, and does not stay residue glue after removing；
The sand blasting jig for carrying lead frame is delivered in abrasive blast equipment again, is heated 5 ~ 10 minutes, temperature rises to 400oC~
450oC makes the firmness change of lead frame to the 80% of most initial hardness；
The surface of the chip carrier of lead frame, shape are hit under conditions of certain pressure and speed using 200# corundum powder
At the rough surface of anisotropic, surface roughness Ra: 6 ~ 20 microns.
In step 4 of the present invention, the plasma cleaning uses argon gas (Ar) and hydrogen (H2) it is used as purge gas.
In step 4 of the present invention, plasma cleaning needs two work steps: step 1: power: 600watt, time: 10s；The
Two steps: power: 300 watt, time: 15s.
In step 6 of the present invention, die press technology for forming parameter:<1>resin plastic-sealed material: EMC,<2>plastic packaging temperature: 160 ~
180oC,<3>plastic packaging pressure: 6 ~ 16 tons,<4>curing time: 100 ~ 150 seconds,<5>product plastic packaging thickness: greater than product
Design thickness,<6>product plastic packaging thickness error control: +/- 15 microns.
In step 12 of the present invention, the strengthening membrane includes semi-solid preparation resin layer and base, and the material of base is
Polyimde(polyimides), PEN(polyethylene naphthalate) etc., Thickness ~ 30 micron, semi-solid preparation resin layer
To have sticking PSA, silicone adhesive(silicone adhesive) etc., 5 microns ~ 18 microns of thickness.
The outside and/or inside of base of the present invention are arranged one layer of very thin abrasion resistant polyurethane and form wearing layer, hard
Degree is in 2H or 3H.
In step 9 of the present invention, the alkali electroless adhesive remover includes 50% monoethanolamine and 40%N- methyl pyrrolidone.
Beneficial effect
(1) packaging method of QFN fingerprint recognition chip disclosed by the invention is improved by mounting film carrier at the lead frame back side
Lead frame bears the ability of huge pulling and impact force, reduces the risk of lead frame deformation well, improves lead
The coplanarity of frame can accurately cut strip-shaped product in last cutting process, reduce lead frame cut partially, product it is short
Transportation work style danger, improves product yield, while reducing the golden finger jitter amplitude in bonding process, improves routing quality；
(2) packaging method of QFN fingerprint recognition chip disclosed by the invention in advance carries out at sandblasting the chip carrier of lead frame
Reason strengthens chip and is bonded intensity with lead frame；
(3) packaging method of QFN fingerprint recognition chip disclosed by the invention can increase encapsulation production by grinding face paste strengthening membrane
The toughness of product before the forming, solves the problems, such as that encapsulating products are easily broken off in technical process, reduces technological operation difficulty, really
Protect the product yield of encapsulating products；
(4) packaging method of QFN fingerprint recognition chip disclosed by the invention can be protected utmostly by grinding face paste strengthening membrane
The flatness and roughness of shield injection molding abradant surface, prevent its scuffing.
Detailed description of the invention
Fig. 1 is a kind of schematic diagram of the process flow of the packaging method of the encapsulating structure of QFN fingerprint recognition chip of the present invention；
Fig. 2 is a kind of diagrammatic cross-section of the encapsulating structure of QFN fingerprint recognition chip of the present invention；
Fig. 3 is the schematic diagram of lead frame of the present invention；
Fig. 4 is the schematic diagram of strengthening membrane of the present invention；
Fig. 5 is the schematic diagram of present invention laser cutting molding.
In figure: lead frame 10
Golden finger 11
Even muscle 12
Chip carrier 13
Chip 2
Bonding wire 21
Plastic part 3
Strengthening membrane 40
Semi-solid preparation resin layer 41
Base 42.
Specific embodiment
In order to elaborate Spirit Essence of the invention, help those skilled in the art are practical, are fully understood by the present invention
Complete technical solution, technical solution of the present invention is described in detail below in conjunction with embodiment and attached drawing:
The technical scheme adopted by the invention is as follows: a kind of QFN(quad flat non-pin package) application in fingerprint recognition field,
Its process flow chart is as shown in fig. 1, specific as follows:
S1: the lead frame back side mounts film carrier；
S2:QFN fingerprint recognition chip sticks in lead frame by silver paste；
S3: silver paste solidification；
S4: plasma cleaning；
S5: routing bonding is carried out with golden finger of the bonding wire to QFN fingerprint recognition chip and lead frame；
S6: plastic packaging forms strip-shaped product；
S7: removing loads film；
S8: solidify after strip-shaped product；
S9: it is rinsed using the residue glue of alkali electroless adhesive remover removal strip-shaped product, then with high pressure water；
S10: strip-shaped product flattens, toasts drying；
S11: grinding is carried out to plastic packaging face and forms abradant surface；
S12: the film coating process of strengthening membrane is carried out in abradant surface；
S13: the pin surface on lead frame is carried out tin plating；
S14: company's muscle of lead frame is cut off；
S15: strip test is carried out to strip-shaped product；
S16: it is marked at the back side of strip-shaped product with radium-shine type information；
S17: after strip-shaped product baking, the strengthening membrane of abradant surface is removed；
S17: it is cut by laser and strip-shaped product is cut into a plurality of single packaging bodies.
Embodiment
The encapsulating structure of the QFN fingerprint recognition chip involved in the present invention arrived, as shown in Fig. 2, chip 2 is arranged in lead frame
10 intermediate region of frame is simultaneously fixedly connected with lead frame 10.Specifically, lead frame 10 includes chip carrier, even muscle 12 and golden hand
Refer to 11, be the carrier of chip 2, chip 2 is fixed on chip carrier, using bonding wire 21 by chip 2 aluminium pad and golden finger 11 one by one
It is correspondingly connected with, the golden finger 11 in remaining sides is fixedly connected with chip carrier, and chip 2 will be electric by being electrically connected with golden finger 11
Signal is transmitted to the structure of external pcb board.The chip 2 is that silicon substrate fingerprint chip is also possible to other in other embodiments
The chip of material or other function.Plastic part 3 wraps up the front of lead frame 10 and chip 2, bonding wire 21, forms thickness
The packaging body of 600um ~ 900um.
The frame that company's muscle 12 of lead frame 10 is made of metal material, including four edges are in lead frame to institute
There is component to play the structure of physical connection, at least one golden finger 11 is provided in the even each edge of muscle 12, even muscle 12 is used for
Supporting wire frame 10 simultaneously connects chip carrier by golden finger 11, and golden finger 11 is sealed for being electrically connected chip 2 and fingerprint chip
Fill external structure and fixed core bar；Golden finger 11 connects the quantity on muscle 12 on each side and is arranged according to actual needs, such as Fig. 3 institute
Show.Before plastic part injection molding, the embodiment of the present invention is not handled even muscle 12 first, and even the back side of muscle 12 does not have injected plastics material
Covering.After plastic part injection molding, is not also cut at once, become strip-shaped product.
A kind of packaging method of the encapsulating structure of QFN fingerprint recognition chip of the present invention, specific implementation step are as follows:
Step 1: the lead frame back side mounts film carrier.
The loading film wide with whole lead frame and smooth pad pasting template are selected, is pasted using high temperature laminator
Film, pad pasting temperature are 200oC。
The loading film of this method selection has three-decker: sustained release layer, adhesive layer and Primary layer.By testing ratio for several times
Right, the material of adhesive layer is improved polyimide material, because polyimides Polymer Materials ' Structure has preferable high temperature
Stability is able to bear the plasma cleaning process of subsequent high-energy without destroying.The range of viscosities of adhesive layer is higher than
20N/cm, 190 ~ 200 DEG C of pad pasting temperature range, while the loading film is also equipped with high temperature (200 DEG C) elasticity modulus, 20 DEG C whens, stretch
Intensity is 200MPa, and 200 DEG C of whens are greater than 100MPa, can be influenced to avoid occurring the shake of golden finger in subsequent bonding process
Routing quality.
It before pad pasting, need to convey the lead frame in pad pasting template, the sustained release layer for loading film then be peeled off, by adhesive layer
Material is fitted in the back side of lead frame.It after pad pasting, needs to detect whether bubble occur, if there is bubble, gas exhaust treatment need to be done.
Step 2: QFN fingerprint recognition chip sticks in lead frame.
Apply silver paste on the chip carrier 13 of lead frame 10, silver paste smears shape and is generally " rice word " shape, " cross " shape, double
Chip is bonded on chip carrier 13 by Y-shaped etc. using Besi ESEC2100 chip attachment machine.
Chip pastes parameter:<1>chip is bonded time (bond time): 50 ~ 150 milliseconds,<2>chip adhesive force
(bond force): 0.5 ~ 1 newton,<3>chip position (die placement): +/- 30 microns, the climbing of<4>silver paste is high
: less than 75% chip thickness is spent, is 0.8 Newtonian time in chip adhesive force, the chip fitting time only needs 100 milliseconds.
Step 3: silver paste solidifies.
In order to guarantee stability that chip is pasted, need to solidify silver paste using baking oven, curing environment is nitrogen
(N2), condition of cure: 175 degrees Celsius are warming up within 30 minutes, soaking time is 30 ~ 60 minutes, and subsequent furnace is cooled to 50 DEG C.
It is bonded intensity between the chip carrier 13 and silver paste of reinforced leads frame, it can be in advance to the chip of lead frame
Seat 13 carries out blasting treatment.Specifically:
By the positive face paste high temperature resistant protective glue band of whole lead frame, only exposed chip seat 13, fitly parallel by lead frame
It is arranged on sand blasting jig and fixed.High temperature resistant protective glue band is formed by silicon rubber bonding glass fiber cloth, and bottom is coated with high temperature
Speciality silica gel is resistant to 500 ~ 800 degree of high temperature, and does not stay residue glue after removing.
The sand blasting jig for carrying lead frame is delivered in abrasive blast equipment again, is heated 5 ~ 10 minutes, temperature rises to
400oC~450oC makes the firmness change of lead frame to the 80% of most initial hardness.Using 200# corundum powder, in certain pressure
Under conditions of power and speed, the surface of the chip carrier 13 of lead frame is hit, the rough surface of anisotropic is formed, surface is thick
Rugosity Ra:6 ~ 20 micron, because surface roughness is micron order, larger, the bond strength of chip carrier 13 and silver paste is obviously obtained
Enhancing.
Step 4: plasma cleaning.
The purpose of plasma cleaning is removal lead frame oxidation on metal surface object and pollutant, uses Vision etc.
Ion Cleaning machine uses argon gas (Ar) and hydrogen (H2) it is used as purge gas.Plasma cleaning is to utilize argon gas and hydrogen shape
Lead frame surface is bombarded at plasmoid, removes surface contaminant, while utilizing hydrionic reproducibility, removal
Its oxide, reaches cleaning purpose.Be after plasma cleaning it is dry, do not need to be dried again can be sent to it is next
Procedure.Plasma cleaning needs two work steps that could complete, step 1: power: 600watt, time: 10s；Step 2: function
Rate: 300 watt, time: 15s.
Step 5: carrying out routing bonding with golden finger of the bonding wire to QFN fingerprint recognition chip and lead frame.
The loading film at the lead frame back side has high temperature (200 DEG C) elasticity modulus, and tensile strength is 200MPa at 20 DEG C,
It is greater than 100MPa at 200 DEG C, reduces the golden finger jitter amplitude in bonding process, improve routing quality.It observes simultaneously,
Chip of the big and thin lead frame Jing Guo step 4 pastes the bonding process with this step, and the loading film of fitting prevents lead frame
The torsional deformation of frame makes lead frame sustain huge pulling and impact force, this lays the foundation for subsequent cutting, has
Help improve the yield of product.
Step 6: plastic packaging, forms strip-shaped product.
The above-mentioned plastic packaging core of die press technology for forming (C-mold) plastic packaging is used using resin plastic-sealed material on the surface of lead frame
Piece and bonding wire and lead frame.
Die press technology for forming parameter:<1>resin plastic-sealed material: EMC,<2>plastic packaging temperature: 160 ~ 180oC,<3>plastic packaging
Pressure: 6 ~ 16 tons,<4>curing time: 100 ~ 150 seconds,<5>product plastic packaging thickness: greater than product design thickness,<6>
Product plastic packaging thickness error control: +/- 15 microns.If product plastic packaging is with a thickness of 450 microns, plastic packaging temperature is 175oC, plastic packaging
Pressure: 6 tons, curing time: 100 seconds.
Step 7: removing loads film.
After 180 DEG C, baking in 4 hours, encapsulating products are adsorbed on vacuum platform, is opened using tweezers and loads film one
Angle, then gently at the uniform velocity remove the loading film (including adhesive layer and Primary layer) at the lead frame back side manually along corner, can also be with
Using full-automatic film stripping machine will load film (including adhesive layer and Primary layer) take off from.
Step 8: solidifying (PMC) after product.
Product plastic packaging material after the completion of plastic packaging shapes also needs further to solidify, and discharges interiors of products stress.
Cure parameter after product:<1>solidification temperature afterwards: 170 ~ 180oC,<2>rear curing time: 2 ~ 8 hours.Generally
Ground, rear solidification temperature are 175oC, rear curing time need 5 hours.
Step 9: being rinsed using the residue glue of alkali electroless adhesive remover removal strip-shaped product, then with high pressure water.
Strip-shaped product has part residue glue after injection molding on lead frame 10, need to remove using chemical degumming agent.Chemistry
Adhesive remover ingredient is strong basicity mixed liquor, is mainly made of polar organic solvent, highly basic and/or water etc., can be effective
The residue glue on strip-shaped product is removed, meanwhile, for no corrosions such as substrates such as metallic aluminium, copper.The mixed liquor is usually 50% single
Ethanol amine and 40%N- methyl pyrrolidone.Chemical degumming agent is warming up to 85 DEG C of temperature, above-mentioned strip-shaped product is impregnated 30 points
Clock is rinsed with 50 kilograms per square centimetres high pressure water of high-pressure water pressure again later.
Step 10: strip-shaped product flattens, baking drying.
Strip-shaped product successively stacks, and every four change for one, apart from top to bottom with the steel plate not less than strip-shaped product area, layer by layer
It stacks, is suppressed on it with 10 kilograms of briquettings, flatten strip-shaped product stress；Enter baking oven later, 150 DEG C of 2 hours perseverances are set
Temperature baking, with abundant volatile chemical liquid medicine residual.
Step 11: carrying out thinned and grinding to plastic packaging face forms abradant surface.
Strip-shaped product polishes to plastic packaging face according to client's roughness requirements using milling apparatus.
Polishing reduction process parameter:<1>emery wheel revolving speed: 800 ~ 3000RPM,<2>polishing thickness error control: +/- 10
Micron.
This technique is to make product integral thickness reach product design requirement by technique for grinding product.Above-mentioned QFN
The polishing target thickness of the plastic packaging layer of the encapsulating structure of fingerprint recognition chip is 270 microns, can choose emery wheel revolving speed:
2000RPM.After polishing, the thickness of packaging body is in 600um ~ 800um.
Step 12: carrying out the film coating process of strengthening membrane in abradant surface.
Since the grinding of plastic packaging face is thinned and the test of subsequent strip needs even muscle to completely cut through, loses and connect between pin
The support of muscle, product are easily broken.It is needed after the completion of the grinding of plastic packaging face using the stronger strengthening membrane protection injection molding abradant surface of toughness.
The protection of strengthening membrane can reduce the difficulty of strip finished product subsequent technique, avoid the mechanical scuffing of abradant surface and chemical contamination, reinforce
The protection of film can also improve the toughness of strip-shaped product, avoid its chipping risk in technical process.
Strengthening membrane has two layers, including semi-solid preparation resin layer 41 and base 42, as shown in Figure 4.The material of base 42 is
Polyimde(polyimides), PEN(polyethylene naphthalate) etc., 20 microns ~ 30 microns of thickness, have it is very good
Impact resistance and tear resistance.For the wear resistence for reinforcing PEN, it is resistance to that very thin one layer is arranged in the outside and/or inside of base 42
It grinds polyurethane and forms wearing layer, hardness can further prevent film surface to be scratched in 2H or 3H.Semi-solid preparation resin layer 41 is tool
Sticking PSA, silicone adhesive(silicone adhesive) etc., 5 microns ~ 18 microns of thickness.The semi-solid preparation tree of strengthening membrane 40
41 side of rouge layer is bonded with injection molding abradant surface, can be softened under heating pressurization, can be reacted solidification after cooling, can obtain strengthening membrane
With the reliable binding force of the plastic packaging layer of product, the encapsulation yield of product is improved.
Step 13: being carried out to the pin surface on lead frame tin plating.
Strip-shaped product is plated to tin on even muscle surface by electrochemical reaction, guarantees that the pins of products eventually formed has
Anti-corrosive properties, electric conductivity, solderability, aesthetics.Because the abradant surface of strip-shaped product posts strengthening membrane, its toughness is enhanced, tin plating
In technical process, the chipping risk of strip-shaped product is reduced, meanwhile, it avoids the mechanical scuffing of abradant surface and chemistry is dirty
Dye.
Step 14: cutting connects muscle, retain injection molding body.
All components are connected due to connecting muscle, all components can not carry out strip test by electrical short.
QFN class product carries out strip test and needs to carry out the company's muscle for the golden finger end for having electric connection with chip by etching technics
It is fully etched, so that each component part inside fingerprint chip package is disconnected electric connection, to avoid the short circuit between pin, to described
Fingerprint chip package carries out strip test, but is molded body portion and retains.
Step 15: carrying out strip test to strip-shaped product.
Testing procedure: after vacuum chuck draws strip-shaped product, being placed on test platform, connects pins of products with test probe
Touching, tests product by program prepared in advance, meeting test program requirement is then qualified products, is otherwise bad production
Product are retested or are scrapped.
Step 16: in the radium-shine type information label in the back side of strip-shaped product.
Information flag is stamped on the back side of strip-shaped product by customer requirement.
Step 17: the strengthening membrane of abradant surface is removed after strip-shaped product baking.
After 180 DEG C, baking in 4 hours, strip-shaped product is adsorbed on vacuum platform, opens strengthening membrane one using tweezers
Angle, then gently strengthening membrane is at the uniform velocity removed manually along corner, it observes, is not found on the abradant surface of strip-shaped product under the microscope
Residue glue.Can also using full-automatic film stripping machine by strengthening membrane take off from.
Strip-shaped product is cut into a plurality of single packaging bodies Step 18: being cut by laser.
The cutting line at the back side of lead frame 10 is cut by laser, strip-shaped product is pressed into customer requirement excision forming, it can
To be round, ellipse, square fillet etc., as shown in figure 5, forming thickness 300um packaging body below.Due to the present invention one
The packaging method of the encapsulating structure of kind QFN fingerprint recognition chip just arranges the attachment of the lead frame back side to carry at the beginning, in step 1
Film makes lead frame sustain chip bonding and huge pulling and impact force in bonding process, makes lead frame whole
Do not occur significantly deforming in a encapsulation process, in last cutting process, can accurately cut strip-shaped product, reduce lead
Frame cuts inclined, product short-circuit risks, improves product yield.
Above-described specific embodiment has carried out further the purpose of the present invention, technical scheme and beneficial effects
Ground is described in detail, it should be understood that being not used to limit this hair the foregoing is merely a specific embodiment of the invention
Bright protection scope.All within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all wrap
Containing within protection scope of the present invention.
Claims (10)
1. a kind of packaging method of the encapsulating structure of QFN fingerprint recognition chip, which is characterized in that its processing step is as follows:
Step 1: the lead frame back side mounts film carrier；
Step 2: QFN fingerprint recognition chip sticks in the chip carrier that the lead frame of loading film is posted at the back side by silver paste；
Step 3: silver paste solidifies the connection for reinforcing QFN fingerprint recognition chip and lead frame；
Step 4: plasma cleaning removal lead frame oxidation on metal surface object and pollutant；
Step 5: carrying out routing bonding with golden finger of the bonding wire to QFN fingerprint recognition chip and lead frame；
Step 6: using the above-mentioned QFN fingerprint recognition of die press technology for forming plastic packaging using resin plastic-sealed material on the surface of lead frame
Chip and bonding wire and lead frame form strip-shaped product and its plastic packaging face；
Step 7: removing the loading film at the strip-shaped product back side after baking；
Step 8: will complete to solidify plastic packaging removes the strip-shaped product progress for loading film again after, and discharge strip interiors of products stress；
Step 9: being rinsed using the residue glue of alkali electroless adhesive remover removal strip-shaped product, then with high pressure water；
Step 10: strip-shaped product flattens, baking drying；
Step 11: carrying out thinned and grinding to the plastic packaging face of strip-shaped product forms abradant surface；
Step 12: carrying out the film coating process of strengthening membrane in abradant surface；
Step 13: being carried out to the pin surface on lead frame tin plating；
Step 14: cutting abradant surface posts company's muscle of the lead frame of strengthening membrane；
Step 15: carrying out strip test to strip-shaped product；
Step 16: in the radium-shine type information label in the back side of strip-shaped product；
Step 17: the strengthening membrane of abradant surface is removed after strip-shaped product baking；
Strip-shaped product is cut into a plurality of single packaging bodies Step 18: being cut by laser.
2. the packaging method of the encapsulating structure of QFN fingerprint recognition chip according to claim 1, which is characterized in that step
In one, the loading film includes sustained release layer, adhesive layer and Primary layer, and the material of the adhesive layer is improved polyimides material
Material, range of viscosities are higher than 20N/cm, and tensile strength is 200MPa at 190 ~ 200 DEG C of pad pasting temperature range, 20 DEG C, and 200 DEG C of whens are big
In 100MPa.
3. the packaging method of the encapsulating structure of QFN fingerprint recognition chip according to claim 1, which is characterized in that step
In two, the chip pastes parameter:<1>chip is bonded time (bond time): 50 ~ 150 milliseconds,<2>chip adhesive force
(bond force): 0.5 ~ 1 newton,<3>chip position (die placement): +/- 30 microns, the climbing of<4>silver paste is high
Spend: less than 75% chip thickness.
4. the packaging method of the encapsulating structure of QFN fingerprint recognition chip according to claim 1, which is characterized in that step
In three, blasting treatment is carried out in advance to the chip carrier 13 of lead frame, specifically:
By the positive face paste high temperature resistant protective glue band of whole lead frame, only exposed chip seat, by lead frame fitly parallel
Cloth is on sand blasting jig and fixed, and high temperature resistant protective glue band is formed by silicon rubber bonding glass fiber cloth, and bottom is coated with high temperature spy
Matter silica gel is resistant to 500 ~ 800 degree of high temperature, and does not stay residue glue after removing；
The sand blasting jig for carrying lead frame is delivered in abrasive blast equipment again, is heated 5 ~ 10 minutes, temperature rises to 400oC~
450oC makes the firmness change of lead frame to the 80% of most initial hardness；
The surface of the chip carrier of lead frame, shape are hit under conditions of certain pressure and speed using 200# corundum powder
At the rough surface of anisotropic, surface roughness Ra: 6 ~ 20 microns.
5. the packaging method of the encapsulating structure of QFN fingerprint recognition chip according to claim 1, which is characterized in that step
In four, the plasma cleaning uses argon gas (Ar) and hydrogen (H2) it is used as purge gas.
6. the packaging method of the encapsulating structure of QFN fingerprint recognition chip according to claim 1, which is characterized in that step
In four, plasma cleaning needs two work steps: step 1: power: 600watt, time: 10s；Step 2: power: 300
Watt, time: 15s.
7. the packaging method of the encapsulating structure of QFN fingerprint recognition chip according to claim 1, which is characterized in that step
In six, die press technology for forming parameter:<1>resin plastic-sealed material: EMC,<2>plastic packaging temperature: 160 ~ 180oC,<3>plastic packaging pressure
Power: 6 ~ 16 tons,<4>curing time: 100 ~ 150 seconds,<5>product plastic packaging thickness: greater than product design thickness,<6>product
Plastic packaging thickness error control: +/- 15 microns.
8. the packaging method of the encapsulating structure of QFN fingerprint recognition chip according to claim 1, which is characterized in that step
In 12, the strengthening membrane includes semi-solid preparation resin layer and base, and the material of base is Polyimde(polyimides), PEN
(polyethylene naphthalate) etc., 20 microns ~ 30 microns of thickness, semi-solid preparation resin layer be have sticking PSA,
Silicone adhesive(silicone adhesive) etc., 5 microns ~ 18 microns of thickness.
9. the packaging method of the encapsulating structure of QFN fingerprint recognition chip according to claim 8, which is characterized in that described
The outside and/or inside of base are arranged one layer of very thin abrasion resistant polyurethane and form wearing layer, and hardness is in 2H or 3H.
10. the packaging method of the encapsulating structure of QFN fingerprint recognition chip according to claim 1, which is characterized in that step
In nine, the alkali electroless adhesive remover includes 50% monoethanolamine and 40%N- methyl pyrrolidone.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111863634A (en) * | 2019-04-28 | 2020-10-30 | 无锡华润安盛科技有限公司 | Manufacturing method of ultrathin packaging structure |
| CN112582285A (en) * | 2020-12-15 | 2021-03-30 | 青岛歌尔微电子研究院有限公司 | Thinning method of packaging structure |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101273452A (en) * | 2005-09-06 | 2008-09-24 | 宇芯（毛里求斯）控股有限公司 | Die pad for semiconductor packages |
| CN101297404A (en) * | 2005-12-24 | 2008-10-29 | 崔显圭 | Semiconductor package, method of fabricating the same and semiconductor package module for image sensor |
| CN101355042A (en) * | 2007-07-25 | 2009-01-28 | 嘉盛马来西亚公司 | Thin plastic leadless package with exposed metal die paddle |
| CN101740539A (en) * | 2008-11-07 | 2010-06-16 | 矽品精密工业股份有限公司 | Square planar pin-free encapsulating unit and manufacturing method and lead frame thereof |
| CN101764047A (en) * | 2008-12-23 | 2010-06-30 | 国际商业机器公司 | Method of thinning a semiconductor substrate |
| CN101859713A (en) * | 2009-04-10 | 2010-10-13 | 日月光半导体制造股份有限公司 | Advanced quad flat non-leaded package and manufacture method thereof |
| US20150155227A1 (en) * | 2011-02-14 | 2015-06-04 | Renesas Electronics Corporation | Semiconductor device |
| CN206480617U (en) * | 2017-02-15 | 2017-09-08 | 长华科技股份有限公司 | Without Pin-Grid Array lead frame preform and lead frame encapsulation structure |
| CN103515261B (en) * | 2012-06-27 | 2017-11-24 | 瑞萨电子株式会社 | The method and semiconductor devices being used for producing the semiconductor devices |
-
2018
- 2018-07-27 CN CN201810842390.5A patent/CN109037083A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101273452A (en) * | 2005-09-06 | 2008-09-24 | 宇芯（毛里求斯）控股有限公司 | Die pad for semiconductor packages |
| CN101297404A (en) * | 2005-12-24 | 2008-10-29 | 崔显圭 | Semiconductor package, method of fabricating the same and semiconductor package module for image sensor |
| CN101355042A (en) * | 2007-07-25 | 2009-01-28 | 嘉盛马来西亚公司 | Thin plastic leadless package with exposed metal die paddle |
| CN101740539A (en) * | 2008-11-07 | 2010-06-16 | 矽品精密工业股份有限公司 | Square planar pin-free encapsulating unit and manufacturing method and lead frame thereof |
| CN101764047A (en) * | 2008-12-23 | 2010-06-30 | 国际商业机器公司 | Method of thinning a semiconductor substrate |
| CN101859713A (en) * | 2009-04-10 | 2010-10-13 | 日月光半导体制造股份有限公司 | Advanced quad flat non-leaded package and manufacture method thereof |
| US20150155227A1 (en) * | 2011-02-14 | 2015-06-04 | Renesas Electronics Corporation | Semiconductor device |
| CN103515261B (en) * | 2012-06-27 | 2017-11-24 | 瑞萨电子株式会社 | The method and semiconductor devices being used for producing the semiconductor devices |
| CN206480617U (en) * | 2017-02-15 | 2017-09-08 | 长华科技股份有限公司 | Without Pin-Grid Array lead frame preform and lead frame encapsulation structure |
Non-Patent Citations (1)
| Title |
|---|
| 王海军: "《热喷涂实用技术》", 31 May 2006 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111863634A (en) * | 2019-04-28 | 2020-10-30 | 无锡华润安盛科技有限公司 | Manufacturing method of ultrathin packaging structure |
| CN111863634B (en) * | 2019-04-28 | 2023-10-27 | 无锡华润安盛科技有限公司 | Manufacturing method of ultrathin packaging structure |
| CN112582285A (en) * | 2020-12-15 | 2021-03-30 | 青岛歌尔微电子研究院有限公司 | Thinning method of packaging structure |
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Application publication date: 20181218 |