JP5565668B2 - Combination of semiconductor element mounting member and wiring conductor, semiconductor element mounting substrate and manufacturing method thereof, and semiconductor element package and manufacturing method thereof - Google Patents

Description

  The present invention relates to a combination of a semiconductor element mounting member and a wiring conductor, a semiconductor element mounting substrate and a manufacturing method thereof, and a semiconductor element package and a manufacturing method thereof, and more particularly from a sealing resin portion of a semiconductor element package to a semiconductor element. TECHNICAL FIELD The present invention relates to a combination of a semiconductor element mounting member and a wiring conductor, a semiconductor element mounting substrate and a manufacturing method thereof, and a semiconductor element package and a manufacturing method thereof, which can prevent the mounting member or the wiring conductor from falling off. .

  Conventionally, as a thin semiconductor device (semiconductor package), for example, a QFN (Quad Flat Non-leaded package) type or a SON (Small Outline Non-leaded Package) type is known.

  Further, Patent Document 1-2 discloses a coreless type semiconductor package. Such a coreless semiconductor package is a form of a semiconductor package that has been developed to solve the two problems of thinning the semiconductor package and improving the heat dissipation characteristics. Generally, a core member such as an internal wiring board called a lead frame or an interposer has a certain thickness in order to maintain a shape that can be transported and processed by itself and a mechanical strength. Since the coreless semiconductor package described above does not include a core member such as a lead frame or an internal wiring board (referred to as an interposer) (coreless), the semiconductor package can be thinned.

  In such a thin coreless type semiconductor package, a die pad (semiconductor element mounting member) and a core member (such as a lead frame or an internal wiring board) for supporting the wiring conductor are not provided, so that the sealing resin portion Therefore, it is desired that the die pad (semiconductor element mounting member) and the wiring conductor be prevented from falling off.

Japanese Patent Publication No. 4-47977 JP 2001-358254 A

  In particular, in recent years, it has been considered to select an LED (light emitting diode) element as a semiconductor element mounted in such a thin coreless semiconductor package. In this case, it is essential that the resin (sealing resin portion) for sealing the LED element is transparent. However, many resins (sealing resin portions) satisfying such properties do not have high adhesion to the die pad (semiconductor element mounting member) and the wiring conductor. Therefore, in particular, in a semiconductor element package including an LED element, a structure in which a die pad (semiconductor element mounting member) and a wiring conductor are not dropped from the sealing resin portion is more demanded.

  The present invention has been made in consideration of such points, and is capable of preventing the semiconductor element mounting member and the wiring conductor from falling off from the sealing resin portion of the semiconductor element package. It is an object of the present invention to provide an assembly of a member and a wiring conductor, a semiconductor element mounting substrate and a manufacturing method thereof, and a semiconductor element package and a manufacturing method thereof.

The present invention has a mounting surface on which an LED element is mounted in a combination of a semiconductor element mounting member and a wiring conductor for constituting a coreless type semiconductor element package including an LED element and a sealing resin portion. A semiconductor element mounting member; and a wiring conductor provided around the semiconductor element mounting member and having a connection surface connected to the LED element, the mounting surface of the semiconductor element mounting member and the connection surface of the wiring conductor Protrusions for improving adhesion to the sealing resin portion are provided on at least one surface so as to project upward , the projections have a dome shape, and the projections have a diameter of 10 μm to 100 μm. Is a combination of a semiconductor element mounting member and a wiring conductor, characterized in that the height is 5 μm to 25 μm .

In the present invention, the protrusion is formed only on a part of at least one of the mounting surface of the semiconductor element mounting member and the connection surface of the wiring conductor, and the wiring conductor And the union.

The present invention is a combination of a semiconductor element mounting member and a wiring conductor , wherein the semiconductor element mounting member and the wiring conductor are formed by plating .

The present invention is an assembly of a semiconductor element mounting member and a wiring conductor, wherein the protrusion is formed integrally with at least one of the semiconductor element mounting member and the wiring conductor by plating .

  The present invention is an assembly of a semiconductor element mounting member and a wiring conductor, wherein at least one of the semiconductor element mounting member and the wiring conductor has a side protrusion protruding from the side surface thereof.

  In the present invention, the protrusion is formed over the entire outer periphery of at least one of the mounting surface of the semiconductor element mounting member and the connection surface of the wiring conductor. It is a union.

  The present invention is a semiconductor element mounting board comprising: a combination of a semiconductor element mounting member and a wiring conductor; and a substrate that supports the combination of the semiconductor element mounting member and the wiring conductor. .

The present invention provides a coreless type semiconductor device package, a semiconductor element mounting member having a mounting surface for mounting the LED element, and the LED elements placed on the mounting surface of the semiconductor element mounting member, the semiconductor element A wiring conductor provided around the mounting member and having a connection surface connected to the LED element, a conductive portion that electrically connects the connection surface of the wiring conductor and the LED element, a semiconductor element mounting member, and the LED element , A wiring conductor, and a sealing resin portion that seals the conductive portion, and at least one of the mounting surface of the semiconductor element mounting member and the connection surface of the wiring conductor is in close contact with the sealing resin portion A protrusion is provided so as to protrude upward from the surface , the protrusion has a dome shape, the diameter of the protrusion is 10 μm to 100 μm, and the height of the protrusion is 5 μm to 25 μm. Element package Di.

The present invention is the semiconductor element package characterized in that the protrusion is formed only on a part of at least one of the mounting surface of the semiconductor element mounting member and the connection surface of the wiring conductor .

The present invention is the semiconductor element package, wherein the semiconductor element mounting member and the wiring conductor are formed by plating .

The present invention is the semiconductor element package characterized in that the protrusion is formed integrally with at least one of the semiconductor element mounting member and the wiring conductor by plating .

  The present invention is the semiconductor element package characterized in that at least one of the semiconductor element mounting member and the wiring conductor has a side protrusion protruding from the side surface.

  The present invention is the semiconductor element package characterized in that the protrusion is formed over the entire outer periphery of at least one of the mounting surface of the semiconductor element mounting member and the connection surface of the wiring conductor.

  The present invention relates to a method of manufacturing a semiconductor element mounting substrate used for manufacturing a coreless semiconductor element package, a step of preparing a substrate that functions as a support member, and a resist having a desired pattern is provided on the surface of the substrate A semiconductor element mounting member having a mounting surface for mounting a semiconductor element by plating the surface side of the substrate and mounting the semiconductor element; and a connection provided around the semiconductor element mounting member and connected to the semiconductor element A step of forming a wiring conductor having a surface and a step of removing a resist on the surface side of the substrate, wherein the mounting of the semiconductor element mounting member in the step of forming the semiconductor element mounting member and the wiring conductor by plating Protrusions for improving the adhesion with the sealing resin portion are formed on at least one of the surface and the connection surface of the wiring conductor so as to protrude upward from the surface. It is a manufacturing method of a semiconductor element mounting 置基 plate characterized.

  In the present invention, after the step of forming the semiconductor element mounting member and the wiring conductor by plating, etching is performed from the back side of the substrate, thereby forming the substrate into a predetermined outer shape and forming a transport hole in the substrate. A process for producing a semiconductor element mounting substrate, comprising a step.

  The present invention provides a method of manufacturing a coreless semiconductor element package, a step of preparing a substrate that functions as a support member, a step of providing a resist having a desired pattern on the surface of the substrate, plating on the surface side of the substrate, Forming a semiconductor element mounting member having a mounting surface for mounting a semiconductor element, a wiring conductor having a connection surface provided around the semiconductor element mounting member and connected to the semiconductor element; Removing the resist on the surface side, mounting the semiconductor element on the semiconductor element mounting member, connecting the semiconductor element and the wiring conductor by a conductive portion, a semiconductor element mounting member on the substrate, Forming a sealing resin portion by sealing the wiring conductor, the semiconductor element, and the conductive portion with a sealing resin; and removing the substrate that functions as a support member from the sealing resin portion. And, in the step of forming the semiconductor element mounting member and the wiring conductor by plating, at least one of the mounting surface of the semiconductor element mounting member and the connection surface of the wiring conductor has adhesiveness with the sealing resin portion. A method of manufacturing a semiconductor device package, characterized in that a protrusion for raising is formed so as to protrude upward.

  In the present invention, after the step of forming the semiconductor element mounting member and the wiring conductor by plating, etching is performed from the back side of the substrate, thereby forming the substrate into a predetermined outer shape and forming a transport hole in the substrate. A method of manufacturing a semiconductor device package, comprising a step.

  According to the present invention, the protrusion for enhancing the adhesion with the sealing resin portion is projected upward on at least one of the mounting surface of the semiconductor element mounting member and the connection surface of the wiring conductor. Since it provided so that the adhesiveness of a semiconductor element mounting member or a wiring conductor, and a sealing resin part can be improved, it can prevent that a semiconductor element mounting member or a wiring conductor falls off from a sealing resin part.

Sectional drawing which shows the semiconductor element package by the 1st Embodiment of this invention. Sectional drawing which shows the assembly body of the semiconductor element mounting member and wiring conductor by the 1st Embodiment of this invention. Sectional drawing which shows the semiconductor element mounting substrate by the 1st Embodiment of this invention. The fragmentary sectional view which expands and shows the protrusion of a semiconductor element mounting member and a wiring conductor. Sectional drawing which shows the state by which the semiconductor element package by the 1st Embodiment of this invention is arrange | positioned on the wiring board. Sectional drawing which shows the state by which the semiconductor element package by the modification of the 1st Embodiment of this invention is arrange | positioned on the wiring board. The figure which shows the manufacturing method of the semiconductor element mounting substrate by the 1st Embodiment of this invention. The figure which shows the method of forming a semiconductor element mounting member and a wiring conductor by the electroplating method. The figure which shows the modification of the method of forming a semiconductor element mounting member and a wiring conductor by the electroplating method. The figure which shows the manufacturing method of the semiconductor element package by the 1st Embodiment of this invention. Sectional drawing which shows the semiconductor element package by the 2nd Embodiment of this invention. Sectional drawing which shows the semiconductor element package by the 3rd Embodiment of this invention. FIG. 6 is a plan view showing a semiconductor element package according to a third embodiment of the present invention.

First Embodiment Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. 1 to 10 are diagrams showing a first embodiment of the present invention.

  First, an outline of the coreless semiconductor element package according to the present embodiment will be described with reference to FIGS. In the following, the description will be made on the assumption that the semiconductor element 11 is mainly an LED element. However, a semiconductor element other than the LED element may be used as the semiconductor element 11.

  A coreless resin-encapsulated semiconductor element package 10 shown in FIG. 1 includes a semiconductor element mounting member 20 (die pad), a semiconductor element 11 mounted on the semiconductor element mounting member 20, and a semiconductor element mounting member. And wiring conductors 30 provided around 20. The wiring conductor 30 and the semiconductor element 11 are electrically connected by a bonding wire (conductive portion) 12. Further, the semiconductor element mounting member 20, the semiconductor element 11, the wiring conductor 30, and the bonding wire 12 are sealed with a sealing resin portion 13.

  In the following, each component constituting the coreless semiconductor element package 10 will be described in order.

  First, the configuration of the semiconductor element mounting member 20 and the wiring conductor 30 according to the present embodiment will be described with reference to FIG.

  As shown in FIG. 2, the semiconductor element mounting member 20 has a mounting surface 21 on which the semiconductor element 11 is mounted. The mounting surface 21 is provided with a protrusion 22 for improving the adhesion between the semiconductor element mounting member 20 and the sealing resin portion 13. The protrusion 22 is provided so as to protrude upward from the placement surface 21. In the present specification, “upward” means upward when the semiconductor element package 10 is normally used, for example, the direction of the light emitting surface 13a in FIG.

  The shape of the protrusion 22 is not limited, but may be a substantially dome shape or a substantially hemispherical shape, for example, as shown in FIG. In this case, the diameter of the protrusion 22 is preferably 10 μm to 100 μm, and more preferably 25 μm to 50 μm. Moreover, it is preferable that the height of the protrusion 22 be 5 μm to 25 μm. When the diameter of the protrusion 22 is less than 10 μm or the height of the protrusion 22 is less than 5 μm, it is difficult to sufficiently improve the adhesion with the sealing resin portion 13. On the other hand, when the diameter of the protrusion 22 exceeds 100 μm or the height of the protrusion 22 exceeds 25 μm, it is difficult to ensure a wide mounting surface 21.

  The number of protrusions 22 on the mounting surface 21 is not limited, and one or a plurality of protrusions 22 may be provided on the mounting surface 21.

  An external terminal 26 is provided on the lower surface of the semiconductor element mounting member 20, and the external terminal 26 is exposed to the outside from the sealing resin portion 13 when incorporated in the semiconductor element package 10. (See FIG. 1).

  On the other hand, the wiring conductor 30 is provided apart from the semiconductor element mounting member 20. The wiring conductor 30 has a connection surface 31 connected to the semiconductor element 11 via the bonding wire 12. On the connection surface 31, a protrusion 22 for improving the adhesion between the wiring conductor 30 and the sealing resin portion 13 is provided so as to protrude upward from the connection surface 31.

  The number of protrusions 22 on the connection surface 31 is not limited, and one or a plurality of protrusions 22 may be provided on the connection surface 31. In addition, since the structure of the protrusion 22 on the connection surface 31 is the same as the structure of the protrusion 22 on the mounting surface 21, the detailed description is omitted here.

  An external terminal 32 is provided on the lower surface of the wiring conductor 30, and the external terminal 32 is exposed to the outside from the sealing resin portion 13 when assembled in the semiconductor element package 10 (FIG. 1). reference).

  In FIG. 2, a combined body 15 is constituted by the semiconductor element mounting member 20 and the wiring conductor 30. In the present embodiment, such a combination 15 of the semiconductor element mounting member 20 and the wiring conductor 30 is also provided.

  On the other hand, as shown in FIG. 3, the semiconductor element mounting substrate according to the present embodiment includes the above-described combination 15 of the semiconductor element mounting member 20 and the wiring conductor 30 and the substrate 40 that supports the combination 15. 50 is configured. In the present embodiment, such a semiconductor element mounting substrate 50 is also provided. Details of the substrate 40 will be described later.

  By the way, the semiconductor element mounting member 20 and the wiring conductor 30 are formed by plating. Each protrusion 22 is integrally formed with the semiconductor element mounting member 20 and the wiring conductor 30 by plating. Hereinafter, the layer configuration of the semiconductor element mounting member 20 and the wiring conductor 30 formed by plating will be described with reference to FIG. FIG. 4 is an enlarged partial cross-sectional view showing the protrusion 22 in the semiconductor element mounting member 20 and the wiring conductor 30.

  As shown in FIG. 4, the semiconductor element mounting member 20 (wiring conductor 30) is formed on the main body plating layer 24 and the main body plating layer 24, and reflects light from the semiconductor element 11 (LED element). And a reflective plating layer 25 functioning as a reflective surface.

  Of these, the main body plating layer 24 is made of a plating layer containing a metal such as nickel (Ni). The thickness of the main body plating layer 24 can be, for example, 10 μm to 100 μm.

  On the other hand, the reflection plating layer 25 is made of a plating layer having a high visible light reflectance, and functions as a reflection surface for reflecting light from the semiconductor element 11 (LED element) as described above. It has become. Examples of the material constituting the reflective plating layer 25 include a three-layer structure of silver (Ag), gold (Au), palladium (Pd), or nickel (Ni) / palladium (Pd) / gold (Au). However, silver (Ag) is preferably used from the viewpoint of light reflectance. The thickness of the reflective plating layer 25 is, for example, 1 μm to 5 μm in the case of silver (Ag), and nickel (Ni) in the case of a three-layer structure of nickel (Ni) / palladium (Pd) / gold (Au). It is preferable that the thickness is 0.2 μm or more, the thickness of palladium (Pd) is 0.01 to 0.1 μm, and the thickness of gold (Au) is 0.001 to 0.03 μm.

  As shown in FIG. 4, the protrusion 22 is formed by plating integrally with the semiconductor element mounting member 20 (wiring conductor 30). That is, inside the protrusion 22, the main body plating layer 24 and the reflection plating layer 25 on the main body plating layer 24 are laminated.

  With reference to FIG. 1 again, each of the other components will be described.

  In the present embodiment, as described above, the semiconductor element 11 is an LED element. In this case, the semiconductor element 11 mounted on the semiconductor element mounting member 20 can be an LED element that is conventionally used. Further, as the light emitting layer of the semiconductor element 11, for example, by appropriately selecting a material made of a compound semiconductor single crystal such as GaP, GaAs, GaAlAs, GaAsP, AlInGaP, or InGaN, an emission wavelength ranging from ultraviolet light to infrared light is selected. be able to.

  The semiconductor element 11 is fixed on the semiconductor element mounting member 20 by solder or die bonding paste (not shown). As such a die bonding paste, it is possible to select a die bonding paste made of a light-resistant epoxy resin or silicone resin.

  The bonding wire 12 is made of a material having good conductivity such as gold, and one end thereof is connected to the terminal portion 11 a of the semiconductor element 11 and the other end is connected to the connection surface 31 of the wiring conductor 30.

  As the sealing resin portion 13, it is desirable to select a material having a high light transmittance and a high refractive index at the emission wavelength of the semiconductor element package 10 in order to improve the light extraction efficiency. Therefore, it is possible to select an epoxy resin or a silicone resin as a resin that satisfies the characteristics of high heat resistance, weather resistance, and mechanical strength. The shape of the sealing resin portion 13 can be realized in various ways. For example, the entire shape of the sealing resin portion 13 can be a rectangular parallelepiped, a cylindrical shape, a cone shape, or the like. The thickness of the sealing resin portion 13 (that is, the thickness of the coreless semiconductor element package 10 as a whole) can be 200 μm to 500 μm, and is thinner than conventional semiconductor element packages (for example, PLCC type and SON type). Can be configured. Further, on the surface of the sealing resin portion 13 (that is, the upper surface in FIG. 1), a light emitting surface 13a from which light from the semiconductor element 11 is emitted is formed.

  Incidentally, as shown in FIG. 5, such a coreless type semiconductor element package 10 can be used by being disposed on a wiring board 35. Such a wiring board 35 has a board body 36 and wiring terminal portions 37 and 38 formed on the board body 36. Among these, one wiring terminal part 37 is connected to the external terminal 26 of the semiconductor element mounting member 20 via one connection metal part 33. The other wiring terminal portion 38 is connected to the external terminal 32 of the wiring conductor 30 via the other connecting metal portion 34. In addition, the connection metal parts 33 and 34 can be comprised, for example from solder.

  In this way, when the semiconductor element package 10 is disposed on the wiring substrate 35 and a current is passed between the wiring terminal portions 37 and 38, a current is applied to the semiconductor element 11 on the semiconductor element mounting member 20, and the semiconductor Element 11 is lit.

  At this time, the light from the semiconductor element 11 is reflected by the reflective plating layer 25 (see FIG. 4) formed on the mounting surface 21 of the semiconductor element mounting member 20, and this light generally faces the light emitting surface 13a side. Then, irradiation is performed as indicated by a symbol L in FIG.

  On the other hand, the heat generated from the semiconductor element 11 is released outward from the external terminals 26 of the main body plating layer 24 through the connection metal portion 33 (reference numeral H in FIG. 5). Therefore, the heat from the semiconductor element 11 does not accumulate in the sealing resin portion 13, and the semiconductor element 11 can be prevented from being destroyed by the heat.

  In the example of FIG. 5 described above, the semiconductor element mounting member 20 has two functions: a function of mechanically supporting the semiconductor element 11 and a function of being electrically connected to the semiconductor element 11 and serving as an electrical terminal. have. However, the present invention is not limited to this, and as shown in the modified example shown in FIG. 6, as a configuration of the semiconductor element package 10 </ b> C, the semiconductor element mounting member 20 has only a function of mechanically supporting the semiconductor element 11, and a new electrical terminal is provided. It is good also as a structure which added wiring conductor 30A. In such a configuration, the semiconductor element package 10C is configured by one semiconductor element mounting member 20 and two wiring conductors 30 and 30A. In FIG. 6, a symbol E indicates a current flow for lighting the semiconductor element 11, and a symbol H indicates a heat flow from the semiconductor element 11. In FIG. 6, the same parts as those in the embodiment shown in FIGS. 1 to 5 are denoted by the same reference numerals.

  Next, a method of manufacturing the semiconductor element mounting substrate (FIG. 3) and the coreless type semiconductor element package (FIG. 1) according to the present embodiment will be described with reference to FIGS. 7A to 7E are views showing a method of manufacturing the semiconductor element mounting substrate 50 according to the present embodiment, and FIGS. 8A to 8D and FIGS. c) is a diagram showing a method of forming the semiconductor element mounting member 20 and the wiring conductor 30 by electrolytic plating in the step shown in FIG. 7C. FIGS. 10A to 10E are views showing processes from the production of the semiconductor element mounting substrate 50 to the production of the coreless semiconductor element package 10.

  First, as shown in FIG. 7A, a substrate 40 that functions as a support member is prepared. As the substrate 40, for example, a conductive substrate such as copper, iron-nickel alloy, iron-nickel-chromium alloy, iron-nickel-carbon alloy, or Cu, Ni, Ag, Pd, Au or an alloy thereof on the surface. An insulating substrate provided with a conductive layer can be used. When copper or a copper alloy is used as the substrate 40, for example, the substrate 40 can be removed by selective etching after the semiconductor element 11 is incorporated. In addition, as will be described later, a surface treatment is performed so that the semiconductor element mounting member 20 and the wiring conductor 30 can be easily peeled off from the substrate 40, and a surface treatment is performed on the one surface of the substrate 40 in advance, and a peeling treatment is performed to provide peelability. It is also possible to take measures such as Examples of the surface treatment here include blasting by sandblasting, and examples of the peeling treatment include a method of forming an oxide film on the surface of the substrate 40.

  Next, resist layers 41 and 42 each having a desired pattern are provided on the front and back surfaces of the substrate 40 (FIG. 7B). Among these, the resist layer 41 on the surface side is made of a resin that can be peeled off by an alkali, an acid, a solvent, or the like, and is made of a photosensitive and chemical-resistant resin such as an acrylic resin.

  Further, openings 41a and 41b are formed in the resist layer 41 at locations corresponding to the formation portions of the semiconductor element mounting members 20 and the wiring conductors 30, and the substrate 40 is exposed from the openings 41a and 41b. Yes. Of the openings 41a and 41b, the opening 41a corresponds to a place where the semiconductor element mounting member 20 is provided, and the opening 41b corresponds to a place where the wiring conductor 30 is provided. In this case, a resist layer 41 is provided on the entire surface of the substrate 40, the resist layer 41 is exposed through a photomask, and then developed to form openings 41 a and 41 b in the resist layer 41. In addition, the thickness of the resist layer 41 on the front surface side is set larger than the thickness of the semiconductor element mounting member 20 and the wiring conductor 30.

  On the other hand, the resist layer 42 on the back side is made of a resin that can be peeled off by alkali, acid, solvent, or the like, and may be made of a material different from the resist layer 41 on the front side. The resist layer 42 on the back side has an opening 42a formed at a position corresponding to the site where the transfer hole 27 is formed, and the substrate 40 is exposed from the opening 42a. In this case, a resist layer 42 is provided on the entire back surface of the substrate 40, the resist layer 42 is exposed through a photomask, and then developed to form an opening 42 a in the resist layer 42.

  Next, the back surface side of the substrate 40 is covered with a cover 43, and electrolytic plating is performed on the front surface side of the substrate 40. Thus, the metal is deposited on the substrate 40 to form the semiconductor element mounting member 20 having the mounting surface 21, and the wiring conductor 30 having the connection surface 31 provided around the semiconductor element mounting member 20 is formed. (FIG. 7C). In this case, the mounting surface 21 of the semiconductor element mounting member 20 and the connection surface 31 of the wiring conductor 30 are formed with protrusions 22 projecting upward from the mounting surface 21 and the connection surface 31, respectively.

  Hereinafter, a method of manufacturing the semiconductor element mounting member 20 and the wiring conductor 30 having such a shape will be described with reference to FIGS.

  First, the main body plating layer 24 made of, for example, nickel (Ni) is formed in the openings 41a and 41b of the resist layer 41 by performing electrolytic plating on the substrate 40 (FIGS. 8A to 8C). In this case, the electrolytic plating is performed in a plating bath 47 for nickel plating, for example. As the plating bath 47, for example, a nickel sulfamate plating bath having a high nickel concentration can be used.

  During this period, first, as shown in FIG. 8A, a plating layer 24 a (for example, a nickel plating layer) is formed on the substrate 40 by applying a current to the substrate 40. The plating layer 24 a is a thin layer (for example, a layer having a thickness of 1 μm to 5 μm) constituting a part of the main body plating layer 24.

  Next, an individual piece 48 made of, for example, copper is disposed on the thin plating layer 24a. Although the magnitude | size of the piece 48 is not ask | required, the substantially spherical thing about 0.01 micrometers-5 micrometers in diameter can be used, for example (FIG.8 (b)).

  Subsequently, the main body plating layer 24 having a predetermined thickness (for example, 10 μm to 100 μm) is formed by continuously performing electrolytic plating in the plating bath 47. At this time, since current concentration occurs in the portion 48, the plating grows intensively in this portion, thereby forming the protrusion 22 protruding upward in the main body plating layer 24 (FIG. 8C). ).

  Next, reflective plating made of, for example, a three-layer structure of silver (Ag), gold (Au), palladium (Pd), or nickel (Ni) / palladium (Pd) / gold (Au) on the main body plating layer 24. The layer 25 is formed (FIG. 8D). The reflective plating layer 25 functions as a reflective surface for reflecting light from the semiconductor element 11. In this case, for example, a cyan plating bath can be used as the plating solution.

  Thus, the semiconductor element mounting member 20 and the wiring conductor 30 having the main body plating layer 24 and the reflection plating layer 25 are formed in the openings 41 a and 41 b of the resist layer 41.

  Or when forming the semiconductor element mounting member 20 and the wiring conductor 30 by plating, you may use the method shown to Fig.9 (a)-(c).

  In this case, first, the rough surface processing etc. are given to the board | substrate 40 previously, and the fine convex part 49 is formed in the board | substrate 40 (FIG. 9 (a)). Although the size of the fine convex part 49 is not ask | required, the thing whose diameter is about 0.01 micrometer-1 micrometer can be utilized, for example.

  Subsequently, the main body plating layer 24 made of, for example, nickel (Ni) is formed by performing electrolytic plating on the substrate 40 in the plating bath 47. In this case, since current concentration occurs in the portion of the convex portion 49, plating grows intensively in this portion, thereby forming a protrusion 22 protruding upward in the main body plating layer 24 (FIG. 9B). ).

  Next, on the main body plating layer 24, for example, a reflective layer composed of a three-layer structure of silver (Ag), gold (Au), palladium (Pd), nickel (Ni) / palladium (Pd) / gold (Au), or the like. By forming the plating layer 25, the semiconductor element mounting member 20 and the wiring conductor 30 having the main body plating layer 24 and the reflective plating layer 25 are formed (FIG. 9C).

  After the semiconductor element mounting member 20 and the wiring conductor 30 are formed by plating in this way, the surface side of the substrate 40 is covered with the cover 44 and the back surface side of the substrate 40 as shown in FIG. The cover 43 is peeled off. Next, etching is performed from the back side of the substrate 40 to make the substrate 40 have a predetermined outer shape, and a desired transfer hole 27 is formed at a position corresponding to the opening 42 a of the resist layer 42 on the substrate 40. To do. The transport hole 27 is used when the substrate 40 is transported or positioned in the manufacturing process of the semiconductor element package 10 to be described later.

  Next, the cover 44 on the front side of the substrate 40 is peeled off, and the resist layers 41 and 42 on the front side and the back side of the substrate 40 are further peeled off (FIG. 7E). In this manner, a semiconductor element mounting substrate 50 including the combination 15 (see FIG. 2) of the semiconductor element mounting member 20 and the wiring conductor 30 and the substrate 40 that supports the combination 15 is obtained. At this time, if the substrate 40 functioning as a support member is removed from the semiconductor element mounting member 20 and the wiring conductor 30, the combined body 15 shown in FIG. 2 can be obtained.

  Next, a manufacturing method of the coreless type semiconductor element package according to the present embodiment will be described with reference to FIGS. In FIGS. 10A to 10E, the display of the transfer hole 27 (FIG. 7E) of the substrate 40 is omitted for convenience.

  First, the semiconductor element mounting which has the board | substrate 40 and the assembly 15 of the semiconductor element mounting member 20 and the wiring conductor 30 which were formed on the board | substrate 40 by the process shown to Fig.7 (a)-(e) mentioned above. The mounting substrate 50 is produced (FIG. 10A).

  Next, the semiconductor element 11 is mounted and fixed on the mounting surface 21 of the semiconductor element mounting member 20 via solder or die bonding paste (not shown) (FIG. 10B). As the die bonding paste, a die bonding paste made of a light-resistant epoxy resin or silicone resin can be used.

  Next, the bonding wire 12 is used to electrically connect the terminal portion 11a of the semiconductor element 11 and the connection surface 31 of the wiring conductor 30 (wire bonding) (FIG. 10C).

  Thereafter, the semiconductor element mounting member 20, the wiring conductor 30, the semiconductor element 11, and the bonding wire 12 on the substrate 40 are sealed with a sealing resin portion 13 made of, for example, epoxy resin or silicone resin (FIG. 10D). . Next, the substrate 40 on the back surface side is removed from the semiconductor element mounting member 20 and the wiring conductor 30 by, for example, etching or physically peeling. In this way, the coreless type semiconductor element package 10 shown in FIG. 1 can be obtained (FIG. 10E).

  A plurality of semiconductor element mounting members 20 and a plurality of wiring conductors 30 are formed on the substrate 40 in advance, and the sealing resin portion 13 is diced for each semiconductor element package including each semiconductor element 11. The coreless type semiconductor element package 10 shown in FIG.

  As described above, according to the present embodiment, the protrusion 22 for enhancing the adhesion with the sealing resin portion 13 is provided on the mounting surface 21 of the semiconductor element mounting member 20 and the connection surface 31 of the wiring conductor 30. Since it provided so that it might protrude toward the mounting surface 21 and the connection surface 31, the adhesiveness of the semiconductor element mounting member 20, the wiring conductor 30, and the sealing resin part 13 can be improved. That is, the contact area between the semiconductor element mounting member 20 and the wiring conductor 30 and the sealing resin portion 13 is increased, and a physical anchor effect by the protrusion 22 is obtained, whereby the semiconductor element mounting member 20 and the wiring are obtained. The pullout strength of the conductor 30 increases. As a result, it is possible to prevent the semiconductor element mounting member 20 and the wiring conductor 30 from dropping from the sealing resin portion 13, and the highly reliable semiconductor element package 10 can be obtained.

  In addition, according to the present embodiment, a lead frame or the like is not used for mounting the semiconductor element 11 (that is, coreless), so that the thickness of the semiconductor element package 10 can be reduced. Specifically, the thickness of the semiconductor element package 10 can be 200 μm to 500 μm.

  Furthermore, according to the present embodiment, since the semiconductor element mounting member 20 is made of metal plating, the heat from the semiconductor element 11 can be easily released to the outside of the semiconductor element package 10, and the heat dissipation of the semiconductor element package 10. Can be increased.

Second Embodiment Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 11 is a diagram showing a second embodiment of the present invention and corresponds to FIG. 1 of the first embodiment. The second embodiment shown in FIG. 11 is different from the semiconductor device mounting member 20 and the wiring conductor 30 in that side projections 29 and 39 projecting sideways are provided. The configuration is substantially the same as that of the first embodiment described above. In FIG. 11, the same parts as those of the first embodiment shown in FIGS. 1 to 10 are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 11, in the coreless semiconductor element package 10 </ b> A according to the present embodiment, the mounting surface 21 of the semiconductor element mounting member 20 and the connection surface 31 of the wiring conductor 30 are in close contact with the sealing resin portion 13. A protrusion 22 is provided to improve the property, and the protrusion 22 protrudes upward from the placement surface 21 and the connection surface 31.

  In the present embodiment, as shown in FIG. 11, the semiconductor element mounting member 20 has side protrusions 29 protruding from the side surface 20a toward the side. The side protrusions 29 are preferably provided over the entire circumference of the side surface 20 a of the semiconductor element mounting member 20. Similarly, the wiring conductor 30 has the side protrusion part 39 which protrudes toward the side from the side surface 30b. The side protrusions 39 are also preferably provided over the entire circumference of the side surface 30b of the wiring conductor 30.

  When the semiconductor element mounting member 20 and the wiring conductor 30 having such a shape are produced, in the step of forming the semiconductor element mounting member 20 and the wiring conductor 30 by electrolytic plating (see FIG. 7C), the plated metal Is deposited thicker than the thickness of the resist layer 41. As a result, the metal deposited in the openings 41a and 41b of the resist layer 41 is deposited upward along the inner walls of the openings 41a and 41b, and then rises from the resist layer 41 along the surface of the resist layer 41. It also precipitates in the direction. In this way, as shown in FIG. 11, side protrusions 29 and 39 projecting sideways from the side surface 20 a of the semiconductor element mounting member 20 and the side surface 30 b of the wiring conductor 30 are formed.

  In addition, the manufacturing method of the coreless type semiconductor element package and the manufacturing method of the semiconductor element mounting substrate according to the present embodiment are substantially the same as those of the first embodiment described above, and thus detailed description thereof is omitted here. To do.

  According to the present embodiment, since the side projections 29 and 39 projecting sideways from the side surfaces 20a and 30b of the semiconductor element mounting member 20 and the wiring conductor 30 are provided, the sealing resin portion 13 is provided. Therefore, it is possible to prevent the semiconductor element mounting member 20 and the wiring conductor 30 from falling off.

Third Embodiment Next, a third embodiment of the present invention will be described with reference to FIGS. 12 and 13 are diagrams showing a third embodiment of the present invention. FIG. 12 is a diagram corresponding to FIG. 1 of the first embodiment. FIG. 13 is a plan view of the semiconductor element mounting member 20 (wiring conductor 30). The third embodiment shown in FIGS. 12 and 13 is different in that the projections 23 are formed over the entire outer periphery of the mounting surface 21 of the semiconductor element mounting member 20 and the connection surface 31 of the wiring conductor 30. In other respects, the configuration is substantially the same as the first embodiment and the second embodiment described above. 12 and 13, the same parts as those in the first embodiment and the second embodiment shown in FIGS. 1 to 11 are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 12, in the coreless semiconductor element package 10B according to the present embodiment, the mounting surface 21 of the semiconductor element mounting member 20 and the connection surface 31 of the wiring conductor 30 are respectively connected to the sealing resin portion 13. Protrusions 23 are provided for improving the adhesion. Each protrusion 23 protrudes upward from the mounting surface 21 and the connection surface 31, and also protrudes laterally from the side surface 20 a of the semiconductor element mounting member 20 and the side surface 30 b of the wiring conductor 30. .

  In this case, as shown in FIG. 13, each protrusion 23 extends along the outer surface of the mounting surface 21 of the semiconductor element mounting member 20 and the connection surface 31 of the wiring conductor 30. It is formed over the circumference.

  When manufacturing the semiconductor element mounting member 20 and the wiring conductor 30 having such a shape, in the step of forming the semiconductor element mounting member 20 and the wiring conductor 30 by electrolytic plating (see FIG. 7C), the protrusions are formed. A metal (for example, the piece 48 in FIGS. 8B to 8D or the protrusion 49 in FIGS. 9A to 9C) corresponding to the shape of the projection 23 is formed as a nucleus at the time of formation. The plating is intensively grown in this part. Accordingly, the protrusions 23 can be formed over the entire outer periphery of the mounting surface 21 of the semiconductor element mounting member 20 and the connection surface 31 of the wiring conductor 30.

  In addition, the manufacturing method of the coreless type semiconductor element package and the manufacturing method of the semiconductor element mounting substrate according to the present embodiment are substantially the same as those of the first embodiment described above, and thus detailed description thereof is omitted here. To do.

  According to the present embodiment, the projections 23 for improving the adhesion with the sealing resin portion 13 are provided on the placement surface 21 of the semiconductor element placement member 20 and the connection surface 31 of the wiring conductor 30 respectively. The adhesion between the semiconductor element mounting member 20 and the wiring conductor 30 and the sealing resin portion 13 can be enhanced, and the semiconductor element mounting member 20 and the wiring conductor 30 are prevented from falling off the sealing resin portion 13. Can do.

  According to the present embodiment, for example, when an LED element is used as the semiconductor element 11, the projection 23 reflects light upward (see the symbol L in FIG. 12), so that the effect of controlling the light emission direction and improving the light emission efficiency is achieved. Is also obtained at the same time.

  In the first to third embodiments described above, the protrusions 22 are formed on both the mounting surface 21 of the semiconductor element mounting member 20 and the connection surface 31 of the wiring conductor 30. However, the present invention is not limited to this, and the protrusions 22 may be formed on only one of the mounting surface 21 of the semiconductor element mounting member 20 and the connection surface 31 of the wiring conductor 30.

DESCRIPTION OF SYMBOLS 10, 10A, 10B, 10C Semiconductor element package 11 Semiconductor element 12 Bonding wire 13 Sealing resin part 15 Combination 20 Semiconductor element mounting member 21 Mounting surface 22, 23 Protrusion 29 Lateral protrusion part 30, 30A Wiring conductor 31 Connection Surface 40 Substrate 50 Semiconductor element mounting substrate

Claims (17)

In a combination of a semiconductor element mounting member and a wiring conductor for constituting a coreless type semiconductor element package including an LED element and a sealing resin portion,
A semiconductor element mounting member having a mounting surface for mounting the LED element;
A wiring conductor provided around the semiconductor element mounting member and having a connection surface connected to the LED element;
Providing at least one surface of the mounting surface of the semiconductor element mounting member and the connection surface of the wiring conductor to project a protrusion for improving the adhesion with the sealing resin portion toward the upper surface ,
The protrusion has a dome shape, the protrusion has a diameter of 10 μm to 100 μm, and the height of the protrusion is 5 μm to 25 μm. A combination of a semiconductor element mounting member and a wiring conductor. 2. The semiconductor element mounting member and wiring according to claim 1, wherein the protrusion is formed only on a part of at least one of the mounting surface of the semiconductor element mounting member and the connection surface of the wiring conductor. A combination with a conductor. 3. The combination of a semiconductor element mounting member and a wiring conductor according to claim 1, wherein the semiconductor element mounting member and the wiring conductor are formed by plating. 4. The combination of a semiconductor element mounting member and a wiring conductor according to claim 3 , wherein the protrusion is formed by plating integrally with at least one of the semiconductor element mounting member and the wiring conductor.   5. The semiconductor element mounting member and the wiring conductor according to claim 1, wherein at least one of the semiconductor element mounting member and the wiring conductor has a side protrusion protruding from a side surface thereof. The union.   4. The semiconductor according to claim 1, wherein the protrusion is formed over the entire outer periphery of at least one of the mounting surface of the semiconductor element mounting member and the connection surface of the wiring conductor. A combination of an element mounting member and a wiring conductor. A combination of the semiconductor element mounting member and the wiring conductor according to any one of claims 1 to 6,
A semiconductor element mounting substrate comprising a substrate for supporting a combination of a semiconductor element mounting member and a wiring conductor. In coreless type semiconductor device package,
A semiconductor element mounting member having a mounting surface for mounting the LED element;
An LED element placed on the placement surface of the semiconductor element placement member;
A wiring conductor provided around the semiconductor element mounting member and having a connection surface connected to the LED element;
A conductive portion that electrically connects the connection surface of the wiring conductor and the LED element;
A semiconductor element mounting member, an LED element, a wiring conductor, and a sealing resin portion that seals the conductive portion;
Providing at least one surface of the mounting surface of the semiconductor element mounting member and the connection surface of the wiring conductor to project a protrusion for improving the adhesion with the sealing resin portion toward the upper surface ,
The semiconductor element package , wherein the protrusion has a dome shape, the diameter of the protrusion is 10 μm to 100 μm, and the height of the protrusion is 5 μm to 25 μm . 9. The semiconductor element package according to claim 8, wherein the protrusion is formed only on a part of at least one of the mounting surface of the semiconductor element mounting member and the connection surface of the wiring conductor. The semiconductor element mounting member and the wiring conductor, a semiconductor device package according to claim 8 or 9, wherein in that it is formed by plating. 11. The semiconductor element package according to claim 10 , wherein the protrusion is formed by plating integrally with at least one of the semiconductor element mounting member and the wiring conductor.   The semiconductor element package according to any one of claims 8 to 11, wherein at least one of the semiconductor element mounting member and the wiring conductor has a side protrusion protruding from a side surface thereof.   11. The semiconductor according to claim 8, wherein the protrusion is formed over the entire outer periphery of at least one of the mounting surface of the semiconductor element mounting member and the connection surface of the wiring conductor. Device package. In a method for manufacturing a semiconductor element mounting substrate used for manufacturing a coreless semiconductor element package,
Preparing a substrate that functions as a support member;
Providing a resist having a desired pattern on the surface of the substrate;
A semiconductor element mounting member having a mounting surface for mounting an LED element, plated on the surface side of the substrate, and a connection surface provided around the semiconductor element mounting member and connected to the LED element Forming a wiring conductor;
Removing the resist on the surface side of the substrate,
In the step of forming the semiconductor element mounting member and the wiring conductor by plating, in order to improve the adhesion with the sealing resin portion on at least one of the mounting surface of the semiconductor element mounting member and the connection surface of the wiring conductor the projections are formed so as to protrude toward the plane upward,
The method of manufacturing a semiconductor element mounting substrate , wherein the protrusion has a dome shape, the diameter of the protrusion is 10 μm to 100 μm, and the height of the protrusion is 5 μm to 25 μm .   After the step of forming the semiconductor element mounting member and the wiring conductor by plating, a step of forming the substrate into a predetermined outer shape by etching from the back side of the substrate and forming a transport hole in the substrate is provided. The method of manufacturing a semiconductor element mounting substrate according to claim 14, wherein In the manufacturing method of the coreless type semiconductor element package,
Preparing a substrate that functions as a support member;
Providing a resist having a desired pattern on the surface of the substrate;
A semiconductor element mounting member having a mounting surface for mounting the LED element by plating the surface side of the substrate, and a wiring having a connection surface provided around the semiconductor element mounting member and connected to the LED element Forming a conductor;
Removing the resist on the surface side of the substrate;
A step of mounting the LED element on the semiconductor element mounting member;
Connecting the LED element and the wiring conductor by a conductive portion;
A step of forming a sealing resin portion by sealing a semiconductor element mounting member, a wiring conductor, an LED element, and a conductive portion on a substrate with a sealing resin;
Removing the substrate functioning as a support member from the sealing resin portion,
In the step of forming the semiconductor element mounting member and the wiring conductor by plating, in order to improve the adhesion with the sealing resin portion on at least one of the mounting surface of the semiconductor element mounting member and the connection surface of the wiring conductor the projections are formed so as to protrude toward the plane upward,
The method of manufacturing a semiconductor device package, wherein the protrusion has a dome shape, the diameter of the protrusion is 10 μm to 100 μm, and the height of the protrusion is 5 μm to 25 μm .   After the step of forming the semiconductor element mounting member and the wiring conductor by plating, a step of forming the substrate into a predetermined outer shape by etching from the back side of the substrate and forming a transport hole in the substrate is provided. 17. The method of manufacturing a semiconductor device package according to claim 16, wherein:

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