CN107623045A - A kind of diode - Google Patents
A kind of diode Download PDFInfo
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- CN107623045A CN107623045A CN201710915875.8A CN201710915875A CN107623045A CN 107623045 A CN107623045 A CN 107623045A CN 201710915875 A CN201710915875 A CN 201710915875A CN 107623045 A CN107623045 A CN 107623045A
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- diode
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Abstract
The invention discloses a kind of diode, including shell body, anode tap, cathode leg, base, golden antimony alloy support frame, PN junction, aluminium alloy bead, N-type silicon and fin, the shell body to be internally provided with base；The base upper end is fixedly connected with golden antimony alloy support frame；The golden antimony alloy support frame lower end is fixedly connected with N-type silicon；The N-type silicon upper end is fixedly connected with PN junction；The PN junction；The PN junction upper end is fixedly connected with aluminium alloy bead；The aluminium alloy bead upper end is fixedly connected with anode tap；The base lower end is fixedly connected with fin；The base lower end is fixedly connected with negative electrode；Include depletion layer, barrier layer and barrier region inside PN junction.The beneficial effect of the invention is that service life is long, and for through-current capability than preferable, efficiency comparison is high, and radiating effect is relatively good.
Description
Technical field
Invention is related to diode technologies field, specially a kind of diode
Background technology
Diode, among electronic component, a kind of device with two electrodes, only an electric current is allowed to be flowed through by single direction,
Many uses are the functions using its rectification.And varactor is then used for the adjustable condenser as electronic type.It is most of
The diode possessed sense of current we be normally referred to as " rectification " function.The most common function of diode is exactly only to allow
Electric current is passed through by single direction（Referred to as forward bias voltage drop）, blocked when reverse（Referred to as reverse bias）.Therefore, diode can be thought
Into the non-return valve of electronic edition.
But the problem of current diode has through-flow difference, and efficiency is low, weak heat-dissipating, and service life is short.
The content of the invention
The purpose of invention is to provide a kind of diode, and to solve the through-flow difference proposed in above-mentioned background technology, efficiency is low,
Weak heat-dissipating, the short problem of service life.
To achieve the above object, invention provides following technical scheme：A kind of diode, including shell body, anode tap, the moon
Pole lead, base, golden antimony alloy support frame, PN junction, aluminium alloy bead, N-type silicon and fin, the shell body are internally provided with
Base；The base upper end is fixedly connected with golden antimony alloy support frame；The golden antimony alloy support frame lower end is fixedly connected with N-type
Silicon；The N-type silicon upper end is fixedly connected with PN junction；The PN junction upper end is fixedly connected with aluminium alloy bead；The aluminium alloy is small
Ball upper end is fixedly connected with anode tap；The base lower end is fixedly connected with fin；The base lower end is fixedly connected with
Cathode leg.
Preferably, depletion layer, barrier layer and barrier region are included inside the PN junction.
Preferably, the PN junction is P-I-N structures.
Preferably, the n is doping concentration.
Preferably, the N- is that N areas are adulterated at bottom, and the N ﹢ are that P areas are adulterated at bottom.
Preferably, it is transverse conductance structure inside the PN junction.
Compared with prior art, the beneficial effect of invention is：
1st, the diode, it is transverse conductance structure by setting N-type silicon upper end to be fixedly connected with PN junction, and inside PN junction, electricity
It is parallel with silicon chip surface to flow the general direction flowed in the N-type silicon that golden antimony alloy support frame lower end is fixedly connected so that N
Increased in type silicon by the effective area of electric current, the through-current capability of diode is than preferable.
2nd, the diode, depletion layer, barrier layer and barrier region are included inside PN junction by setting, and depletion layer, stop
Layer and barrier region include some electronics N and some hole P；Some N and some P are respectively N areas and P areas, and PN junction is tied for P-I-N
Structure, doping concentration is low, and N-bottom doping N areas can bears very high voltage without breakdown, therefore N-bottom doping N areas are got over
Thickness, the backward voltage that diode can be born is higher, prevents that diode is breakdown, service life is long.
3rd, diode, by the PN junction for setting N-type silicon upper end to be fixedly connected, as the PN that P N-type silicon upper end is fixedly connected
When the forward current that knot inside is flowed through is smaller, the resistance of diode adulterates ohm electricity in N areas primarily as N-bottom of substrate
Resistance, its resistance is higher and is constant, thus tube voltage drop increases with the rising of forward current, the forward current flowed through on PN junction
When larger, the few sub- hole concentration injected by N ﹢ for bottom doping P areas and be accumulated in N-bottom doping N areas will be very big, in order to maintain half
The electroneutrality condition of conductor, its majority carrier density are also accordingly increased considerably so that its resistivity is decreased obviously so that forward current
Pressure drop is still very low when larger, will not produce voltage overshoot, reversely it is pressure-resistant it is relatively low in the case of its forward voltage drop also very little, make
Obtain its switching loss and forward conduction loss is all smaller, diode operation efficiency comparison is high.
4th, the diode, by setting base lower end to be fixedly connected with fin, radiating effect is relatively good.
Brief description of the drawings
Fig. 1 is a kind of diode structure schematic diagram of invention；
Fig. 2 is a kind of internal structure schematic diagram of diode of invention；
Fig. 3 is a kind of PN junction internal structure schematic diagram of diode of invention；
Fig. 4 is a kind of inner section structural representation of diode of invention.
In figure：10- shell bodies；11- anode taps；12- cathode legs；101- bases；102- gold antimony alloy support frames；
103-PN is tied；104- aluminium alloy beads；105-N types；106- fin.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
Fig. 1-4 are referred to, invention provides a kind of diode technologies scheme：Draw including shell body 10, anode tap 11, negative electrode
Line 12, base 101, golden antimony alloy support frame 102, PN junction 103, aluminium alloy bead 104, N-type silicon 105 and fin 106, it is described
Shell body 10 is internally provided with base 101；The upper end of base 101 is fixedly connected with golden antimony alloy support frame 102；The golden antimony
The lower end of alloy support frame 102 is fixedly connected with N-type silicon 105；The upper end of N-type silicon 105 is fixedly connected with PN junction 103；The PN
The upper end of knot 103 is fixedly connected with aluminium alloy bead 104；The upper end of aluminium alloy bead 104 is fixedly connected with anode tap 11；Institute
State the lower end of base 101 and be fixedly connected with fin 106；The lower end of base 101 is fixedly connected with cathode leg 12.
Preferably, the inside of PN junction 103 includes depletion layer, barrier layer and barrier region.
Preferably, the PN junction is P-I-N structures.
Preferably, the n is doping concentration.
Preferably, the N- is that N areas are adulterated at bottom, and the N ﹢ are that P areas are adulterated at bottom.
Preferably, the inside of PN junction 103 is transverse conductance structure.
Operation principle：The diode, by setting the upper end of N-type silicon 105 to be fixedly connected with PN junction 103, and in PN junction 103
Portion is transverse conductance structure, the totality side of flowing in the N-type silicon 105 that electric current is fixedly connected in the golden lower end of antimony alloy support frame 102
To being parallel with silicon chip surface so that the effective area for passing through electric current in N-type silicon 105 increases, the through-current capability ratio of diode
Preferably.The diode, by setting the inside of PN junction 103 to include depletion layer, barrier layer and barrier region, and depletion layer, barrier layer
Include some electronics N and some hole P with barrier region；Some N and some P are respectively N areas and P areas, and PN junction is P-I-N structures,
Doping concentration is low, and N-bottom doping N areas can bears very high voltage without breakdown, therefore N-bottom doping N areas are thicker, and two
The backward voltage that pole pipe can be born is higher, prevents that diode is breakdown, service life is long.The diode, by setting
The PN junction 103 that the upper end of N-type silicon 105 is fixedly connected is put, is flowed through just inside the PN junction 103 that the upper end of P N-types silicon 105 is fixedly connected
To electric current it is smaller when, the resistance of diode adulterates the Ohmic resistance in N areas primarily as N-bottom of substrate, its resistance it is higher and
For constant, thus tube voltage drop increases with the rising of forward current, when the forward current flowed through on PN junction 103 is larger, by N ﹢
The few sub- hole concentration injected for bottom doping P areas and be accumulated in N-bottom doping N areas will be very big, in order to maintain in the electricity of semiconductor
Property condition, its majority carrier density are also accordingly increased considerably so that its resistivity is decreased obviously so that pressure drop when forward current is larger
Still it is very low, voltage overshoot will not be produced, reversely it is pressure-resistant it is relatively low in the case of its forward voltage drop also very little so that it switchs damage
Consumption and forward conduction loss are all smaller, and diode efficiency is higher.The diode, connected by setting the lower end of base 101 to fix
Fin 106 is connect, radiating effect is relatively good.
Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention
God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these changes and modification.
Claims (7)
- A kind of 1. diode, it is characterised in that：Including shell body（10）, anode tap（11）, cathode leg（12）, base （101）, golden antimony alloy support frame（102）, PN junction（103）, aluminium alloy bead（104）, N-type silicon（105）And fin（106）, The shell body（10）It is internally provided with base（101）；The base（101）Upper end is fixedly connected with golden antimony alloy support frame （102）；The golden antimony alloy support frame（102）Lower end is fixedly connected with N-type silicon（105）；The N-type silicon（105）Upper end is fixed It is connected with PN junction（103）；The PN junction（103）Upper end is fixedly connected with aluminium alloy bead（104）；The aluminium alloy bead （104）Upper end is fixedly connected with anode tap（11）；The base（101）Lower end is fixedly connected with fin（106）；The bottom Seat（101）Lower end is fixedly connected with cathode leg（12）.
- A kind of 2. diode as claimed in claim 1, it is characterised in that：The PN junction（103）Inside includes depletion layer, stopped Layer and barrier region.
- A kind of 3. diode as claimed in claim 1, it is characterised in that：The PN junction is P-I-N structures.
- A kind of 4. diode as claimed in claim 1, it is characterised in that：The n is doping concentration.
- A kind of 5. diode as described in claim 1-4, it is characterised in that：The N- is that N areas are adulterated at bottom, and the N ﹢ mix the bottom of for Miscellaneous P areas.
- A kind of 6. diode as described in claim 1-5, it is characterised in that：The PN junction（103）Inside is transverse conductance knot Structure.
- A kind of 7. application method of diode, it is characterised in that：The diode, by setting the upper end of N-type silicon 105 to be fixedly connected with PN junction 103, and the inside of PN junction 103 is transverse conductance structure, the N that electric current is fixedly connected in the golden lower end of antimony alloy support frame 102 The general direction of flowing is parallel with silicon chip surface in type silicon 105 so that is increased in N-type silicon 105 by the effective area of electric current Greatly, the through-current capability of diode is than preferable；The diode, by setting the inside of PN junction 103 to include depletion layer, barrier layer and potential barrier Area, and depletion layer, barrier layer and barrier region include some electronics N and some hole P；Some N and some P are respectively N areas and P Area, PN junction are P-I-N structures, and doping concentration is low, and N-bottom doping N areas can bears very high voltage without breakdown, therefore N-bottom doping N areas are thicker, and the backward voltage that diode can be born is higher, prevents that diode is breakdown, service life compares It is long；The diode, by the PN junction 103 for setting the upper end of N-type silicon 105 to be fixedly connected, it is fixedly connected when the upper end of P N-types silicon 105 When the forward current flowed through inside PN junction 103 is smaller, the resistance of diode adulterates the Europe in N areas primarily as N-bottom of substrate Nurse resistance, its resistance is higher and is constant, thus tube voltage drop increases with the rising of forward current, is flowed through on PN junction 103 It is that few sub- hole concentration that N-bottom doping N areas are injected and are accumulated in bottom doping P areas will be very greatly by N ﹢ when forward current is larger The electroneutrality condition of semiconductor is maintained, its majority carrier density also accordingly increases considerably so that its resistivity is decreased obviously so that Pressure drop is still very low when forward current is larger, will not produce voltage overshoot, reversely it is pressure-resistant it is relatively low in the case of its forward voltage drop Also very little so that its switching loss and forward conduction loss are all smaller, and diode efficiency is higher；The diode, by setting The lower end of bottom set seat 101 is fixedly connected with fin 106, and radiating effect is relatively good.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710915875.8A CN107623045A (en) | 2017-09-30 | 2017-09-30 | A kind of diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710915875.8A CN107623045A (en) | 2017-09-30 | 2017-09-30 | A kind of diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107623045A true CN107623045A (en) | 2018-01-23 |
Family
ID=61091637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710915875.8A Pending CN107623045A (en) | 2017-09-30 | 2017-09-30 | A kind of diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107623045A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4594602A (en) * | 1983-04-13 | 1986-06-10 | Hitachi, Ltd. | High speed diode |
| CN86200180U (en) * | 1986-01-14 | 1986-12-24 | 厦门洪鹭联合工业公司 | Boxlike diode with metal shell |
| CN1144403A (en) * | 1995-08-28 | 1997-03-05 | 戴超智 | Semiconductor diode consisting of groove form casing component and packaging method |
| CN2376677Y (en) * | 1999-05-31 | 2000-05-03 | 机械工业部广州电器科学研究所 | 200 A rotary silicon rectifier |
| CN1441968A (en) * | 2000-06-26 | 2003-09-10 | 快捷半导体有限公司 | Soft recovery power diode and related method |
| CN101202313A (en) * | 2007-08-29 | 2008-06-18 | 浙江正邦电力电子有限公司 | Ultrafast recovery diode |
| CN204497239U (en) * | 2015-04-28 | 2015-07-22 | 锦州辽晶电子科技有限公司 | Metallic packaging big current, high voltage, fast recovery diode |
| CN105023954A (en) * | 2015-08-07 | 2015-11-04 | 南通明芯微电子有限公司 | Surface contact rectifying diode |
-
2017
- 2017-09-30 CN CN201710915875.8A patent/CN107623045A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4594602A (en) * | 1983-04-13 | 1986-06-10 | Hitachi, Ltd. | High speed diode |
| CN86200180U (en) * | 1986-01-14 | 1986-12-24 | 厦门洪鹭联合工业公司 | Boxlike diode with metal shell |
| CN1144403A (en) * | 1995-08-28 | 1997-03-05 | 戴超智 | Semiconductor diode consisting of groove form casing component and packaging method |
| CN2376677Y (en) * | 1999-05-31 | 2000-05-03 | 机械工业部广州电器科学研究所 | 200 A rotary silicon rectifier |
| CN1441968A (en) * | 2000-06-26 | 2003-09-10 | 快捷半导体有限公司 | Soft recovery power diode and related method |
| CN101202313A (en) * | 2007-08-29 | 2008-06-18 | 浙江正邦电力电子有限公司 | Ultrafast recovery diode |
| CN204497239U (en) * | 2015-04-28 | 2015-07-22 | 锦州辽晶电子科技有限公司 | Metallic packaging big current, high voltage, fast recovery diode |
| CN105023954A (en) * | 2015-08-07 | 2015-11-04 | 南通明芯微电子有限公司 | Surface contact rectifying diode |
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Application publication date: 20180123 |
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