CN1144403A - Semiconductor diode consisting of groove form casing component and packaging method - Google Patents
Semiconductor diode consisting of groove form casing component and packaging method Download PDFInfo
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- CN1144403A CN1144403A CN95108805A CN95108805A CN1144403A CN 1144403 A CN1144403 A CN 1144403A CN 95108805 A CN95108805 A CN 95108805A CN 95108805 A CN95108805 A CN 95108805A CN 1144403 A CN1144403 A CN 1144403A
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- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000004806 packaging method and process Methods 0.000 title description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229920005989 resin Polymers 0.000 claims abstract description 5
- 239000011347 resin Substances 0.000 claims abstract description 5
- 238000003466 welding Methods 0.000 claims description 13
- 239000003822 epoxy resin Substances 0.000 claims description 10
- 238000012856 packing Methods 0.000 claims description 10
- 229920000647 polyepoxide Polymers 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 9
- 230000003628 erosive effect Effects 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- 238000004080 punching Methods 0.000 claims description 8
- 238000000465 moulding Methods 0.000 claims description 5
- 238000001125 extrusion Methods 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 210000003205 muscle Anatomy 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000000087 stabilizing effect Effects 0.000 claims description 3
- 239000011889 copper foil Substances 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000006735 epoxidation reaction Methods 0.000 claims 1
- 239000004020 conductor Substances 0.000 abstract description 4
- 229910052802 copper Inorganic materials 0.000 abstract description 4
- 239000010949 copper Substances 0.000 abstract description 4
- 238000000227 grinding Methods 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract description 2
- 238000005476 soldering Methods 0.000 abstract description 2
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000005538 encapsulation Methods 0.000 description 15
- 239000011521 glass Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 9
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- 239000003795 chemical substances by application Substances 0.000 description 7
- 238000013461 design Methods 0.000 description 7
- GVVPGTZRZFNKDS-JXMROGBWSA-N geranyl diphosphate Chemical compound CC(C)=CCC\C(C)=C\CO[P@](O)(=O)OP(O)(O)=O GVVPGTZRZFNKDS-JXMROGBWSA-N 0.000 description 7
- 238000010276 construction Methods 0.000 description 5
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- 210000001217 buttock Anatomy 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- 238000005245 sintering Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
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- 239000010937 tungsten Substances 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
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- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
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- 239000007792 gaseous phase Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012770 industrial material Substances 0.000 description 1
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- 238000003475 lamination Methods 0.000 description 1
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- 238000003908 quality control method Methods 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The semiconductor diode includes chip, shell and conductor. Said chip is silicon rectifier diode, voltage regulator diode or signal switch diode, and its structure is made up in the form of that its section is sealed and electrodes are equipped with soldering tin or in the form of slice which is not passed through etch-grinding treatment. Said conductor is made of nickel-plated or nickel/silver-plated sheet copper through die-stamping-forming treatment, and is comprised of two pin-type terminals, bottom electrode plate, insulated cut hole, connecting web, crossover electrode and positioning hole, and its sheel is made of aluminium sheet covered with expoxy resin in the form of continuous strip through extrusion-forming procedure, and its bottom is made up in the form of radiation fin.
Description
The present invention relates to semiconductor diode, refer to a kind of semiconductor diode and method for packing thereof especially with groove form casing component group structure.
In recent years, the continuous impulse of requirement that makes rapid progress in many new industrial materials, new technology, new equipment and market electronics unit, part is industrial and the silicon rectifier diode of present output maximum still be developed before 20 years guiding line plastics mould companion type is encapsulated (Plastic Molded AxialLeaded Package), new SOD is still not very good, and once fusion type of the twin columns electrode glass pipe envelope of signal switching diode and MELF encapsulation also are that shortcoming is a lot of.
In year surplus the manufactureization of the silicon rectifier diode in the semiconductor diode existing 40, its main package design evolution is:
1, the metal can type---earlier the chip that cuts is welded with the solder plate of two cylindrical electrode plates with high lead tolerance, with silicon erosion grinding agent erosion mill chip tangent plane, and with oxidant oxidation generation silicon dioxide film, again with chip book jacket agent (varnish Varnish for example, silicon rubber Silicone rubber) protects and be loaded on the chip section sheet, again with this chip assembly and a copper buttock line weld tabs with high tin content, welding in the base body of metal can shell, secondly, buttock line is pierced in the exhaust tube of loam cake, electric welding base and loam cake, the clamp exhaust tube is being pressed buttock line in vacuum tank, promptly finishes the encapsulation of metal can type diode.
From nineteen sixty generation not, in, low-power (below 10 amperes), kind is used new encapsulation instead, but the higher-wattage kind is still used this kind of encapsulation so far, and on chip assembly, improved, this kind of package design is good, however its cost is very high, centering, low-power kind, the more economical practicality of the package design of developping production out afterwards.
2, glass shell secondary sealing by fusing type---earlier copper-clad iron-nickel alloy line, glass orifice pearl, glass tube welding are prepared into spare part, another conductor terminal then prepares into lead bead assembly, weldering one metal hook-type bonding pad on the lead, with tube core assembly (in 1, preparing) and above-mentioned two wire assemblies welding, install sealing glass pipe tail end and bead again additional, and finish the work of group structure.This kind of encapsulation quality is very poor, and cost is also high.
3, sealing by fusing type of double columnar form electrode glass pipe---earlier lead is become wire assembly with iron-nickel alloy (Dummet Alloy) cylinder electric welding.With having the die assembly two sides of book jacket one open traverse is installed respectively, it is outer to be nested with a glass tube, is held in the anchor clamps, and heating is fused on the electrode column glass tube in electric furnace, and two electrode columns are realized its group structure to press mode to follow chip simultaneously.This design is simple and easy, and assembly is also inexpensive, and this kind of encapsulation still is the design of the most economical practicality of low-power kind so far.In recent years because SMD surface needs the adhesion soldered elements, and remodeling removes lead and becomes the encapsulation of MELF external form.MELF is packaged with two big shortcomings: one for not match with the circuit substrate thermal coefficient of expansion, easily makes pipe component fracture or open circuit when the circuit board assembly welding, then bad; Its two for the mechanization pickup, put part, adhesion, welding etc. in the technology and be difficult for operation.
4, bead shell encapsulation (Glass Beaded Rectitier Package)---elder generation cylindrical molybdenum matter electrode is become assembly with the lead electric welding, the wafer sputtering aluminum film that diffusion is finished, covering with matte (Mask Diss) again, be cut into the chip of truncated cone through the sandblast mill, chip wastes the back through mixed acid agent erosion and engages do hard solder with electrode, again through the sour agent that is welded into assembly chip tangent plane lose mill, oxidation, glass dust starch be coated with wrap up in, glass sintering, lead is zinc-plated and finish.
The cut off diameter of this kind of structure die is about 3mm, surpasses this size promptly easily because of the thermal expansion difference tearing between silicon crystal and molybdenum electrode.This kind of is encapsulated as one of at present best quality encapsulation, higher three times of being about the encapsulation of guiding line plastics mould companion type of cost.Forward drop (Vf) is a little more than the soft soldering structure of slicker solder system in addition.A shortcoming is that tubular form is the pearl type again, and is not easy to operate than cylindrical tube in user's application job.
5, guiding line plastics mould companion type is encapsulated---its simple structure, with low cost, adopt the naked copper lead, mixed acid abrasion process, the low but bad of cost; As adopt nickel plating silver lead and alkalescence erosion mill, cost height but quality is better.
6, the compound encapsulation of bead book jacket plastics molded case---have the good reverse parameter quality of glass book jacket, plastics die casting cylinder shell is easy to use, and manufacturing cost only is about 1.5 times of the plastics proplasm, for unique low adult in the high-quality kind of lead-type rectifier diode mass-produced.
7, glass-film protects sealing by fusing type of chip tungsten post electrode glass pipe---chip through the acid etching dissected valley to P type layer, constitute tangent plane nature of glass book jacket film through the chemical gaseous phase lamination process again, vacuum splashing and plating silverskin between chip and the tungsten electrode on the mat wafer engages as high temperature braze, while body shell also sealing by fusing is finished, and operation is to adopt to carry out in DIXSEALER programmable vacuum, inflation, the pressurized cabin, therefore its quality is that the world is best, but cost is also very high, is about tens of times of plastics proplasm.
8, little external form diode---(Small Outline Diode) is called for short SOD, and this is to follow little external form triode SOT development, and full-fledged until the rectifier diode chip GPP of tool glass-film book jacket, the side is able to volume production and goes on the market.Manufacture method system meets GPP and lead frame with lead base scolding tin, again through plastic film casting shell, the terminal Trim Molding forms, GPP is because of being to the N layer from P face dissected valley, its corner cut to the P-N composition surface is negative corner cut, and is subjected to the required requirement of mechanical strength of full wafer wafer construction method, and the powerful stress restriction when reaching the glass-film sintering down, the etched groove degree of depth can't be dark excessively, so reverse proof voltage is lower than 1000 volts.This designs the quality restriction for GPP, simultaneously when the individual chip separation cuts, no matter be to use diamond saw to cut or the molten cutting-up in the radium-shine back side is cut sliver, two kinds of practices all contain the microcrack that can cause otch, huge stress between glass-film and silicon wafer more shape is concentrated, become work cycle, potential failure factor under the temperature cycles, and the manufacturing cost of GPP is very high, for example one ampere of GPP is approximately identical with one one ampere plastic film companion diode cost, the very high desirable not to the utmost part of SOD that is of the shortcoming of this GPP and SOD packaging cost.
The objective of the invention is to overcome the deficiency that above-described traditional diode exists the semiconductor diode and the method for packing thereof that provide a kind of grooved that is suitable for various diode packaging technology to form with mould component.
Semiconductor diode with groove form casing body component sets structure of the present invention is mainly formed by die, conductor and three part groups of shell structure; Die can be the structure of different diode element chip such as silicon rectifier diode, voltage stabilizing didoe, signal switching diode, chip can be had tangent plane book jacket and electrode pre-scolding tin, or the tableted form of handling without tangent plane erosion mill; Guiding element by the copper foil of nickel plating or nickel/silver through punch forming, can prepare into continuous part form during the industrialization volume production, as chip for not cutting into slices of tin, then can be at the chips welding seat place of guiding element pre-scolding tin, the structure of guiding element comprise that two pin type terminals, hearth electrode plate, insulation cut hole, dowel, cross-line electrode and location hole; Shell prepares the continuous strip that forms by epoxy resin or resin-coated aluminium flake through extrusion modling, and its bottom may be molded to the heat radiation fin-shaped, and the sign of diode can be printed on the shell in advance.
Method for packing with groove form casing component group structure semiconductor diode of the present invention comprises:
Guiding element through strike out hearth electrode plate, cross-line electrode, insulation punching two-terminal is the axial connecting piece of one, with the curved pleat moulding of the cross-line electrode punching press on the guiding element, the die slippage is entered location hole between cross-line electrode and hearth electrode plate, and the positive and negative electroplax face with die is welded in respectively on hearth electrode plate and the cross-line electroplax again; An amount of epoxy resin liquid of injection in the groove of shell becomes 90 degree with the curved pleat of the terminal of guiding element, the dowel of excision insulation punching both sides, and in the groove of the epoxy resins of the injection ring liquid of implantation shell, toast with oven for solidifying; Company's muscle between the excision terminal, electric parameter mensuration, anodal identification, corner cut, cut-out bulk-breaking.
Described cross-line electrode is to be formed by the root cutout of a terminal, die mould and anti-pleat.
Cut out insulation between the described two cross-line electrodes in advance and cut the hole, keep dowel, this dowel is excised before going in the casing groove in guiding element, the heeling-in of die assembly.
Described pin terminal can form surface adhering welding ends subtype through excision forming.
Below in conjunction with drawings and Examples enforcement of the present invention is elaborated.
Fig. 1 is an encapsulation step flow chart of the present invention;
Fig. 2 is structure stereoscopic figure of the present invention;
Fig. 3 is structure stereoscopic figure of the present invention;
Fig. 4 is structure stereoscopic figure of the present invention;
Fig. 5 is structure stereoscopic figure of the present invention;
Fig. 6 is structure stereoscopic figure of the present invention;
Fig. 7 is a structure side-looking construction drawing of the present invention;
Fig. 8 is a structure side-looking construction drawing of the present invention;
Fig. 9 is a structure side-looking construction drawing of the present invention;
Figure 10 is a structure side-looking construction drawing of the present invention;
Figure 11 is a shell stereogram of the present invention;
Figure 12 is an assembly drawing of the present invention;
Figure 13 is encapsulation stereoscopic figure of the present invention.
As shown in Figure 1, the semiconductor diode with groove form casing component group structure of the present invention is formed by die 1, guiding element 2 and 3 groups of structures of shell; Its encapsulation process is as described below:
1, die 1 is installed---and scolding tin 4 welds respectively on the hearth electrode plate 22 and cross-line electrode 21 that places guiding element 2, again with the curved pleat moulding of cross-line electrode 21 punching presses, promptly finish the part for preparing of guiding element 2, again die 1 is placed guiding element 2 leftward position, make one side and traverse shaft line parallel of die 1, utilize one group of plate to make die 1 slippage enter the location hole 26 of 22 of cross-line electrode 21 and hearth electrode plates (shown in Fig. 2,3,4,5, as existing pre-scolding tin on the die, then pre-the scolding tin on the guiding element 2 can omit as shown in Figure 6);
2, welding---scolding tin 4 melt backs so that electric furnace is heated and made are in advance welding die 1 between cross-line electrode 21 and hearth electrode plate 22;
3, die 1 tangent plane silicon erosion mill 5 and silicon oxidation 7---will be welded into assembly and immerse in the alkalescence erosion grinding agent, lose mill by temperature, the time set, finish after fully clean with pure water, and with in the weak acid 6 and alkaline etching grinding agent 5 that may be remaining, after fully cleaning with pure water again, immerse dioxygen silicon oxidation 7, carry out oxidation by temperature, the time set, after finishing, clean and dry (shown in Fig. 7,8,9) with pure water;
4, die 1 tangent plane book jacket---with die 1 tangent plane book jacket agent 8 quantitatively, the location coats die 1 place, make the tangent plane position that suitable covering be arranged, then by temperature, the time set be cured, slaking, baking, (annotate: had book jacket as the die that uses, then 3,4 steps can be omitted) as shown in Figure 1;
5, the terminal 23 curved pleats of shell 3 infusion epoxy resin liquid 9 and guiding element 2 and dowel 24 excisions, implantation---in the groove 31 of strip shell 3, inject an amount of epoxy resin liquid 9, in addition behind terminal 23 curved pleat 90 degree with guiding element 2, the dowel 24 of 25 both sides, hole is cut in the excision insulation, and in the groove 31 of the epoxy resins of the injection ring liquid 9 of implantation shell 3 (shown in Figure 10,11,12);
6, epoxy resin liquid 9 is solid roasting---and impose by temperature, the time set with baking box and solidify baking;
7, cut terminal 23 and connect muscle, detection, corner cut, cut-out bulk-breaking; sort and pack---use automation to excise company's muscle, electronic parameter mensuration, anodal identification, corner cut, the cut-out bulk-breaking, sub-category according to the electric parameter measurement result of 23 of terminals; qualified product carry out Packaging Engineering; defective item can be regenerated, sub-quality products is surveyed the choosing packing.
Semiconductor diode with groove form casing component group structure of the present invention zero, assembly its prepare into:
1, guiding element 2, prepare through electrosilvering and punching press with beallon copper sheet tape, as die 1 without pre-scolding tin 4, then must be pre-scolding tin in the welding base of die 1 and cross-line electrode place.
2, die 1, can be fit to various die, for example rectifier diode chip, signal switching diode chip and voltage stabilizing didoe chip.
3, shell 3, and with epoxy resin or resin-coated aluminium flake, through extrusion modling, its bottom may be molded to heat radiating fin shape 32, and opposite side then is shaped to groove shape 31, make can hold guiding element 2 and die 1 to be welded into part implantable.The sign of diode can be printed on the side of shell 3 in advance.
The guiding element 2 and the shell 3 of the semiconductor diode with groove casing component group structure of the present invention, this guiding element 2 is after making, its terminal 23 is connected with a plurality of guiding elements 2, and this shell 3 is after extrusion modling, be a long strip type shape, after guiding element 2 and die 1 are made assembly, be positioned in the groove 31 on the shell 3, again shell 3 is excised.
The invention has the advantages that;
1, part all can prepare into connecting piece and becomes continuous part, realizes automation so that produce.
2, partly make part and also can be designed to the connecting piece kenel, in order to realize manufacturing automation.
3, be shaped with heat radiating fin on the shell, promote heat-sinking capability.
4, in assembling manufacture process, can use the automated machine of conveyor track and processing head mode, Needn't need use multinomial mould such as traditional design, clamp tool relies on a large amount of manual work, and efficient does not have Method improves, and the quality control difficulty.
5, method for packing is applicable to the encapsulation of various diodes.
6, pin terminal can through cut off moulding be the adhesive surface solder type.
7, low cost of manufacture, and best in quality.
Claims (8)
1,, comprises die (1) and shell (3) with the semiconductor diode of groove form casing component group structure; It is characterized in that: also comprise guiding element (2).
2, according to the described semiconductor diode of claim 1, it is characterized in that: die (1) is silicon rectifier diode, voltage stabilizing didoe or signal switching diode; The structure of chip be had tangent plane book jacket and electrode pre-the scolding tin form or the form of cutting into slices handled without tangent plane erosion mill.
3, according to the described semiconductor diode of claim 1, it is characterized in that: through punch forming, guiding element (2) comprises that two pin type terminals (23), hearth electrode plate (22), insulation cut hole (25), dowel (24), cross-line electrode (21) and location hole (26) to guiding element (2) by the copper foil of nickel plating or nickel/silver.
4, according to the described semiconductor diode of claim 1, it is characterized in that: shell (3) prepares into continuous strip by epoxidation resin or resin-coated aluminium flake through extrusion modling, and the bottom is heat radiating fin shape (32).
5, according to the method for packing of any described semiconductor diode in the claim 1-4 item, its special sheet is:
(a): guiding element (2) through strike out hearth electrode plate (22), cross-line electrode (21), insulation punching (25) two-terminal is the axial connecting piece of one, with the curved pleat moulding of cross-line electrode (21) punching press on the guiding element (2), die (1) slippage is entered location hole (26) between cross-line electrode (21) and hearth electrode plate (22), and the positive and negative electroplax face with die (1) is welded in respectively on hearth electrode plate (22) and the cross-line electroplax (21) again;
(b): in the groove (31) of shell (3), inject an amount of epoxy resin liquid (9), the curved pleat of the terminal (23) of guiding element (2) is become 90 degree, the dowel (24) of excision insulation punching (25) both sides, and in the groove (31) of the epoxy resins of the injection ring liquid (9) of implantation shell (3), toast with oven for solidifying;
(c): the company's muscle (24) between excision terminal (23), electric parameter mensuration, anodal identification, corner cut, cut-out bulk-breaking.
6, according to the described method for packing of claim 5, it is characterized in that: described cross-line electrode (21) is to be formed by the root cutout of a terminal (23), die mould and anti-pleat.
7, according to the described method for packing of claim 5, it is characterized in that: cut out insulation between the described two cross-line electrodes (21) in advance and cut hole (25), keep dowel (24), this dowel (24) is excised before going in shell (3) groove (31) in guiding element (2), die (1) assembly heeling-in.
8, according to the described method for packing of claim 5, it is characterized in that: described pin terminal (23) can form surface adhering welding ends subtype through excision forming.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN95108805A CN1043173C (en) | 1995-08-28 | 1995-08-28 | Semiconductor diode consisting of groove form casing component and packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN95108805A CN1043173C (en) | 1995-08-28 | 1995-08-28 | Semiconductor diode consisting of groove form casing component and packaging method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1144403A true CN1144403A (en) | 1997-03-05 |
| CN1043173C CN1043173C (en) | 1999-04-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN95108805A Expired - Fee Related CN1043173C (en) | 1995-08-28 | 1995-08-28 | Semiconductor diode consisting of groove form casing component and packaging method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1043173C (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100435328C (en) * | 2005-12-12 | 2008-11-19 | 三菱电机株式会社 | Molded package element |
| CN101623810B (en) * | 2008-07-11 | 2011-05-11 | 李永泽 | Processing method for stamping clamping components of fan motor swing seat |
| CN102088016B (en) * | 2009-12-04 | 2013-09-25 | 中国振华集团永光电子有限公司 | Semiconductor voltage-stabilizing and rectifying integrated device |
| CN107623045A (en) * | 2017-09-30 | 2018-01-23 | 绍兴上虞欧菲光电科技有限公司 | A kind of diode |
| CN109449127A (en) * | 2018-12-24 | 2019-03-08 | 歌尔股份有限公司 | The packaging technology and encapsulating structure of chip |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5278728A (en) * | 1992-06-25 | 1994-01-11 | The Lincoln Electric Company | Diode mounting |
-
1995
- 1995-08-28 CN CN95108805A patent/CN1043173C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100435328C (en) * | 2005-12-12 | 2008-11-19 | 三菱电机株式会社 | Molded package element |
| CN101623810B (en) * | 2008-07-11 | 2011-05-11 | 李永泽 | Processing method for stamping clamping components of fan motor swing seat |
| CN102088016B (en) * | 2009-12-04 | 2013-09-25 | 中国振华集团永光电子有限公司 | Semiconductor voltage-stabilizing and rectifying integrated device |
| CN107623045A (en) * | 2017-09-30 | 2018-01-23 | 绍兴上虞欧菲光电科技有限公司 | A kind of diode |
| CN109449127A (en) * | 2018-12-24 | 2019-03-08 | 歌尔股份有限公司 | The packaging technology and encapsulating structure of chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1043173C (en) | 1999-04-28 |
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