JP5125975B2 - Resin case manufacturing method - Google Patents

Resin case manufacturing method Download PDF

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Publication number
JP5125975B2
JP5125975B2 JP2008266144A JP2008266144A JP5125975B2 JP 5125975 B2 JP5125975 B2 JP 5125975B2 JP 2008266144 A JP2008266144 A JP 2008266144A JP 2008266144 A JP2008266144 A JP 2008266144A JP 5125975 B2 JP5125975 B2 JP 5125975B2
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resin case
external connection
connection terminal
resin
nut
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JP2010098036A (en
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伸 征矢野
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Description

本発明は樹脂ケース製造方法に関し、特に半導体素子を収納する樹脂ケースの製造のための樹脂ケース製造方法に関する。 The present invention relates to a tree butter case manufacturing method, particularly to a resin case manufacturing method for the preparation of the resin case for accommodating the semiconductor element.

インバータ装置、無停電電源装置、工作機械、産業用ロボット等では、その本体装置とは独立して、パワー半導体素子を搭載した半導体装置(汎用モジュール)が使用されている。そして、このような半導体装置は、複数のパワー半導体素子、回路基板、配線等を樹脂ケース(外装用ケース)内に封止させた構造をしている(例えば、特許文献1参照)。   Inverter devices, uninterruptible power supply devices, machine tools, industrial robots, and the like, semiconductor devices (general-purpose modules) equipped with power semiconductor elements are used independently of the main body devices. Such a semiconductor device has a structure in which a plurality of power semiconductor elements, circuit boards, wirings, and the like are sealed in a resin case (exterior case) (see, for example, Patent Document 1).

図6に樹脂ケースの要部図を示す。ここで、図6(a)には、樹脂ケースの上面が示され、図6(b)には、図6(a)のX−Y断面が示されている。
図示する如く、樹脂ケース100上面の外形は長方形をなし、その内部には上述したパワー半導体素子等が収納される。そして、当該樹脂ケース100の上端面100aから樹脂ケース100の内部には、上記パワー半導体素子の主電極に導通する外部接続用端子(パワー端子)101が延出されている(図6(a)参照)。
特開平06−045518号公報(図1)
The principal part figure of a resin case is shown in FIG. Here, FIG. 6A shows an upper surface of the resin case, and FIG. 6B shows an XY cross section of FIG. 6A.
As shown in the drawing, the outer shape of the upper surface of the resin case 100 is rectangular, and the power semiconductor element and the like described above are accommodated therein. Then, an external connection terminal (power terminal) 101 that extends to the main electrode of the power semiconductor element extends from the upper end surface 100a of the resin case 100 to the inside of the resin case 100 (FIG. 6A). reference).
Japanese Patent Laid-Open No. 06-045518 (FIG. 1)

しかし、樹脂ケース100の上端面100aから延出させた外部接続用端子101においては、図6(b)に示す如く、予め、上端面100aに垂直に封止され、その後に矢印aの方向に折り曲げ加工されて、樹脂ケース100内に封止されたナット102との位置合わせがなされる。   However, the external connection terminal 101 extended from the upper end surface 100a of the resin case 100 is sealed in advance perpendicularly to the upper end surface 100a as shown in FIG. It is bent and aligned with the nut 102 sealed in the resin case 100.

このような折り曲げ加工を施すと、
(1)樹脂ケース100の上端面100aにおいて、外部接続用端子101の根本部分にクラックが発生する場合がある。
When such a bending process is performed,
(1) On the upper end surface 100 a of the resin case 100, a crack may occur at the root portion of the external connection terminal 101.

(2)外部接続用端子101の折り曲げた部分101aにおいて、外部接続用端子101のめっき膜の裂け、剥離が発生する場合がある。
(3)折り曲げた後の外部接続用端子101と上端面100aとの平行性、並びに上端面100aからの外部接続用端子101の高さにばらつきが生じる。
(2) In the bent portion 101a of the external connection terminal 101, the plating film of the external connection terminal 101 may be torn or peeled off.
(3) Variations occur in the parallelism between the bent external connection terminal 101 and the upper end surface 100a and the height of the external connection terminal 101 from the upper end surface 100a.

(4)外部接続用端子101の先端に設けられた孔部101hとナット孔102hとの位置精度が向上しない。
という、問題点があった。
(4) The positional accuracy between the hole 101h provided at the tip of the external connection terminal 101 and the nut hole 102h is not improved.
There was a problem.

本発明はこのような点に鑑みてなされたものであり、品質が高い樹脂ケースを製造する樹脂ケース製造方法を提供することを目的とする。 The present invention has been made in view of the above circumstances, and an object thereof is to provide a resin case method of manufacturing a high resin cases quality.

上記課題を解決するために、締付部材の表面が第1の樹脂ケースから突出するように、前記締付部材を前記第1の樹脂ケース内に固定する工程と、少なくとも一部が折り曲げられた外部接続用端子の一部を前記締付部材上に配置する工程と、前記第1の樹脂ケースの下面と前記外部接続用端子の上面とを金型で挟持しプレスしながら、前記外部接続用端子の一部を第2の樹脂ケース内に固定すると共に、前記第1の樹脂ケースと前記第2の樹脂ケースとを一体化する工程と、を有することを特徴とする樹脂ケース製造方法が提供される。
In order to solve the above-described problem , at least a part of the step of fixing the fastening member in the first resin case is bent so that the surface of the fastening member protrudes from the first resin case. The step of disposing a part of the external connection terminal on the fastening member and the external connection terminal while pressing the lower surface of the first resin case and the upper surface of the external connection terminal with a mold. Providing a resin case manufacturing method, comprising: fixing a part of a terminal in a second resin case, and integrating the first resin case and the second resin case. Is done.

上記手段によれば、樹脂ケースの品質が向上する。   According to the above means, the quality of the resin case is improved.

以下、本実施の形態に係る樹脂ケースを使用した半導体装置を、図面を参照しながら詳細に説明する。
図1は半導体装置の要部断面模式図である。
Hereinafter, a semiconductor device using the resin case according to the present embodiment will be described in detail with reference to the drawings.
FIG. 1 is a schematic cross-sectional view of a main part of a semiconductor device.

半導体装置1においては、板厚が数ミリの金属ベース板10を基体とし、当該金属ベース板10上に、錫(Sn)−銀(Ag)系の鉛フリー半田層(図示しない)を介して絶縁基板20が接合・搭載されている。そして、絶縁基板20上層には、半導体素子30が搭載されている。半導体素子30としては、例えば、IGBT(Insulated Gate Bipolar Transistor)素子、パワーMOSFET(Metal Oxide Semiconductor Field Effect Transistor)素子が該当する。或いは、半導体素子30は、FWD(Free Wheeling Diode)素子であってもよい。これらの素子、配線等が組み合わされて、当該半導体装置1では、例えば、インバータ回路を備えた半導体モジュール(パワーモジュール)を構成している。   In the semiconductor device 1, a metal base plate 10 having a thickness of several millimeters is used as a base, and a tin (Sn) -silver (Ag) based lead-free solder layer (not shown) is provided on the metal base plate 10. An insulating substrate 20 is bonded and mounted. A semiconductor element 30 is mounted on the upper layer of the insulating substrate 20. Examples of the semiconductor element 30 include an IGBT (Insulated Gate Bipolar Transistor) element and a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) element. Alternatively, the semiconductor element 30 may be an FWD (Free Wheeling Diode) element. By combining these elements, wirings, etc., the semiconductor device 1 constitutes, for example, a semiconductor module (power module) including an inverter circuit.

更に、半導体装置1では、金属ベース板10の上端縁に樹脂ケース40,41が固設され、上記半導体素子等が樹脂ケース40,41により封止(パッケージ)されている。このような樹脂ケース40,41は、先に一次成形された樹脂ケース40がさらに二次成形され、一体となっている。   Further, in the semiconductor device 1, resin cases 40 and 41 are fixed to the upper end edge of the metal base plate 10, and the semiconductor elements and the like are sealed (packaged) by the resin cases 40 and 41. The resin cases 40 and 41 are integrally formed by further secondary-molding the resin case 40 previously molded first.

絶縁基板20は、絶縁板20aと、絶縁板20aの下面にDCB(Direct Copper Bonding)法で形成された金属箔20bと、絶縁板20aの上面に同じくDCB法で形成された金属箔20c,20dを備えている。   The insulating substrate 20 includes an insulating plate 20a, a metal foil 20b formed by a DCB (Direct Copper Bonding) method on the lower surface of the insulating plate 20a, and metal foils 20c and 20d formed by the DCB method on the upper surface of the insulating plate 20a. It has.

更に、それぞれの絶縁基板20の金属箔20c上には、半田層(図示しない)を介して、少なくとも一つの半導体素子30が搭載されている。即ち、半導体素子30の裏面電極(主電極)が金属箔20cに接合している。   Further, at least one semiconductor element 30 is mounted on the metal foil 20c of each insulating substrate 20 via a solder layer (not shown). That is, the back electrode (main electrode) of the semiconductor element 30 is bonded to the metal foil 20c.

また、半導体素子30の上記裏面電極とは反対側の主面、即ち、半導体素子30の上面側の主電極30eには、ボンディングワイヤ30wの一端が接合され、ボンディングワイヤ30wの他端が金属箔20dに接合している。そして、当該金属箔20dには、樹脂ケース40内に成形され、固定された外部接続用端子50の一端が接合している。   Further, one end of the bonding wire 30w is joined to the main surface of the semiconductor element 30 opposite to the back surface electrode, that is, the main electrode 30e on the upper surface side of the semiconductor element 30, and the other end of the bonding wire 30w is metal foil. 20d. Then, one end of the external connection terminal 50 molded and fixed in the resin case 40 is joined to the metal foil 20d.

尚、以上の接合は、例えば、上記半田材による半田付け、レーザ溶接、または超音波接合によりなされている。
また、前記一端と反対側の外部接続用端子50の他端は、樹脂ケース41内に挿入され、固定されたナット(締付部材)60に密接している。
In addition, the above joining is made | formed by the soldering by the said solder material, laser welding, or ultrasonic joining, for example.
The other end of the external connection terminal 50 opposite to the one end is in close contact with a nut (tightening member) 60 that is inserted into the resin case 41 and fixed.

このような外部接続用端子50は、樹脂ケース40,41内に収納する回路構成に応じて、インバータ回路の正極入力端子(P端子)、負極入力端子(N端子)、或いは交流出力端子(U,V,W相)とすることもできる。   Such an external connection terminal 50 is a positive input terminal (P terminal), a negative input terminal (N terminal), or an AC output terminal (U) of the inverter circuit, depending on the circuit configuration housed in the resin cases 40 and 41. , V, W phase).

尚、半導体素子30がIGBT素子、パワーMOSFET素子の場合には、半導体素子30の上面側に主電極30eの他、制御用電極を配置している(図示しない)。
ここで、絶縁板20aは、例えば、アルミナ(Al23)焼結体のセラミックで構成され、金属箔20b,20c,20d、外部接続用端子50は、銅(Cu)を主成分とする金属で構成されている。
When the semiconductor element 30 is an IGBT element or a power MOSFET element, a control electrode is arranged on the upper surface side of the semiconductor element 30 in addition to the main electrode 30e (not shown).
Here, the insulating plate 20a is made of, for example, ceramic of alumina (Al 2 O 3 ) sintered body, and the metal foils 20b, 20c, 20d, and the external connection terminals 50 are mainly composed of copper (Cu). Consists of metal.

また、樹脂ケース40,41の材質は、例えば、PPS(ポリ・フェニレン・サルファイド)製である。
そして、半導体装置1においては、樹脂ケース40,41及び金属ベース板10で取り囲まれた空間に、半導体素子30、ボンディングワイヤ30w等の保護を目的として、封止用樹脂70を充填している。封止用樹脂70の材質は、例えば、ゲルまたはエポキシ樹脂を主成分とする樹脂が適用される。
The material of the resin cases 40 and 41 is made of, for example, PPS (poly phenylene sulfide).
In the semiconductor device 1, the sealing resin 70 is filled in the space surrounded by the resin cases 40 and 41 and the metal base plate 10 for the purpose of protecting the semiconductor elements 30, the bonding wires 30 w, and the like. As the material of the sealing resin 70, for example, a resin mainly composed of gel or epoxy resin is applied.

このように、本実施の形態の樹脂ケース40,41では、樹脂ケース41内に表面が突出するように固定されたナット60と、少なくとも一部が折り曲げられ、樹脂ケース40内に一部が固定された外部接続用端子50と、を有している。そして、樹脂ケース40と樹脂ケース41とが一体化し、ナット60の表面と外部接続用端子50の一部とが密接している。   As described above, in the resin cases 40 and 41 of the present embodiment, the nut 60 fixed so that the surface protrudes into the resin case 41 and at least a part thereof are bent, and a part is fixed in the resin case 40. The external connection terminal 50 is provided. The resin case 40 and the resin case 41 are integrated, and the surface of the nut 60 and a part of the external connection terminal 50 are in close contact.

次に、樹脂ケース40,41の製造方法を詳細に説明しながら、上記半導体装置1の製造方法について説明する。本実施の形態では、樹脂ケース41自体を製造する一次成形と、樹脂ケース40と樹脂ケース41とを一体化させた成形体を製造する二次成形とに分けて半導体装置1を製造している。   Next, a method for manufacturing the semiconductor device 1 will be described while explaining a method for manufacturing the resin cases 40 and 41 in detail. In the present embodiment, the semiconductor device 1 is manufactured by dividing into primary molding for manufacturing the resin case 41 itself and secondary molding for manufacturing a molded body in which the resin case 40 and the resin case 41 are integrated. .

図2〜図5は半導体装置の製造方法を説明する要部断面模式図である。
先ず、図2に示す如く、ナット60が挿入・固定された樹脂ケース41を予め製造する。当該樹脂ケース41は、トランスファモールド法により製造される。例えば、溶融した樹脂を金型(図示しない)内に注入し、当該樹脂を金型内で固化させることにより、ナット60を封止・固定した樹脂ケース41を形成する。
2 to 5 are schematic cross-sectional views of relevant parts for explaining a method of manufacturing a semiconductor device.
First, as shown in FIG. 2, a resin case 41 in which a nut 60 is inserted and fixed is manufactured in advance. The resin case 41 is manufactured by a transfer mold method. For example, molten resin is poured into a mold (not shown), and the resin is solidified in the mold, thereby forming a resin case 41 in which the nut 60 is sealed and fixed.

ここで、ナット60においては、ナット60の上面60sが樹脂ケース41の上面41sから突出するように樹脂ケース41内に挿入・固定される。ナット60は、その側面の上部が前記上面41sから0.2mm以上、好ましくは1mm以上露出する。ナット60が突出する大きさの上限は、ナット60を固定できる程度の任意の値をとりうるが、例えば、その側面の高さの半分から3分の2である。   Here, the nut 60 is inserted and fixed in the resin case 41 so that the upper surface 60 s of the nut 60 protrudes from the upper surface 41 s of the resin case 41. An upper portion of the side surface of the nut 60 is exposed from the upper surface 41 s by 0.2 mm or more, preferably 1 mm or more. The upper limit of the size by which the nut 60 protrudes can be any value that allows the nut 60 to be fixed, but is, for example, half to two-thirds of the height of the side surface.

この段階で一次成形が終了する。
尚、一次成形では、ナット60の下方の樹脂ケース41に空間部41hが形成される。当該空間部41hは、ナット60にボルト締めをする際のボルト先端の遊びとなる。
At this stage, primary molding is completed.
In the primary molding, a space 41 h is formed in the resin case 41 below the nut 60. The space portion 41h becomes play of the bolt tip when the nut 60 is bolted.

次に、図3に示す如く、樹脂ケース41と外部接続用端子50との位置合わせを行った後、ナット60上に外部接続用端子50を配置する。
例えば、プレス加工により、予め数箇所を折り曲げた外部接続用端子50を準備し、外部接続用端子50に設けられた貫通孔50hの中心と、ナット孔60hの中心とが合致するようにナット60上に外部接続用端子50を配置する。
Next, as shown in FIG. 3, after positioning the resin case 41 and the external connection terminal 50, the external connection terminal 50 is disposed on the nut 60.
For example, an external connection terminal 50 having several bent portions is prepared in advance by press working, and the nut 60 is arranged so that the center of the through hole 50h provided in the external connection terminal 50 is aligned with the center of the nut hole 60h. The external connection terminal 50 is arranged on the top.

尚、外部接続用端子50においては、折り曲げ加工の後に、めっきによって、例えば、ニッケル(Ni)/金(Au)層等のコーティング膜が形成されている。
次に、図4に示す如く、下金型80と上金型81とによって、上述した樹脂ケース41及び外部接続用端子50を挟持し、二次成形を行う。当該二次成形は、トランスファモールド法により実施される。例えば、樹脂ケース41及び外部接続用端子50を下金型80上に載置した後、下金型80と上金型81とを衝合させて、溶融した樹脂を金型内に注入する。そして、当該樹脂を前記金型内で固化させることにより、樹脂ケース40を形成する。
In the external connection terminal 50, a coating film such as a nickel (Ni) / gold (Au) layer is formed by plating after the bending process.
Next, as shown in FIG. 4, the resin case 41 and the external connection terminal 50 are sandwiched between the lower mold 80 and the upper mold 81 to perform secondary molding. The secondary molding is performed by a transfer mold method. For example, after placing the resin case 41 and the external connection terminal 50 on the lower mold 80, the lower mold 80 and the upper mold 81 are brought into contact with each other, and the molten resin is injected into the mold. Then, the resin case 40 is formed by solidifying the resin in the mold.

この段階で外部接続用端子50の一部が樹脂ケース40に固定されるとともに、ナット60の側面の一部が同様に固定される。
また、本実施の形態の二次成形では、樹脂ケース41の下面41dと下金型80とを直接的に接触させている。即ち、二次成形中、樹脂ケース41の下面41dは、下金型80から直接的に圧力を受けている。
At this stage, a part of the external connection terminal 50 is fixed to the resin case 40, and a part of the side surface of the nut 60 is similarly fixed.
Further, in the secondary molding of the present embodiment, the lower surface 41d of the resin case 41 and the lower mold 80 are brought into direct contact. That is, the lower surface 41 d of the resin case 41 is directly subjected to pressure from the lower mold 80 during the secondary molding.

更に、本実施の形態の二次成形では、外部接続用端子50の上面50sと上金型81とを直接的に接触させている。即ち、二次成形中、外部接続用端子50の上面50sは、上金型81により直接的に圧力を受けている。   Furthermore, in the secondary molding of the present embodiment, the upper surface 50s of the external connection terminal 50 and the upper mold 81 are brought into direct contact. That is, the upper surface 50 s of the external connection terminal 50 is directly subjected to pressure by the upper mold 81 during the secondary molding.

そして、ナット60においては、上述した如く、その上面60sが樹脂ケース41の上面41sから突出している。
従って、下金型80と上金型81とのプレスにより、外部接続用端子50とナット60の上面60sとが密接した状態で二次成形が行われる。
The nut 60 has an upper surface 60s protruding from the upper surface 41s of the resin case 41 as described above.
Therefore, secondary molding is performed by pressing the lower mold 80 and the upper mold 81 in a state where the external connection terminal 50 and the upper surface 60s of the nut 60 are in close contact with each other.

尚、当該二次成形においては、樹脂ケース40を形成するために溶融した樹脂が金型内に注入されることから、樹脂ケース40と樹脂ケース41の界面が固溶する。即ち、二次成形においては、樹脂ケース40と樹脂ケース41とが一体になる。樹脂ケース41の上面41sとこれに対向する外部接続用端子50は樹脂ケース40を介して接している。   In the secondary molding, since the molten resin is injected into the mold to form the resin case 40, the interface between the resin case 40 and the resin case 41 is dissolved. That is, in the secondary molding, the resin case 40 and the resin case 41 are integrated. The upper surface 41 s of the resin case 41 and the external connection terminal 50 facing the upper surface 41 s are in contact with each other through the resin case 40.

次に、下金型80と上金型81とから、外部接続用端子50を固定した樹脂ケース40,41を取り出す。この状態を図5に示す。当該図5に示す如く、樹脂ケース40,41が一体となった樹脂ケースが製造される。   Next, the resin cases 40 and 41 to which the external connection terminals 50 are fixed are taken out from the lower mold 80 and the upper mold 81. This state is shown in FIG. As shown in FIG. 5, a resin case in which the resin cases 40 and 41 are integrated is manufactured.

そして、この後においては、図1に示す金属ベース板10、絶縁基板20、半導体素子30及びボンディングワイヤ30w等を樹脂ケース40,41内に配置して、外部接続用端子50と金属箔20dとを接合する。これにより、上記半導体装置1が形成する。   Thereafter, the metal base plate 10, the insulating substrate 20, the semiconductor element 30, the bonding wire 30w, and the like shown in FIG. 1 are arranged in the resin cases 40 and 41, and the external connection terminal 50 and the metal foil 20d are arranged. Join. Thereby, the semiconductor device 1 is formed.

このように、本実施の形態では、ナット60の表面が樹脂ケース41から突出するように、ナット60を樹脂ケース41内に固定し、少なくとも一部が折り曲げられた外部接続用端子50の一部をナット60上に配置している。そして、樹脂ケース41と外部接続用端子50とを金型で挟持しながら、外部接続用端子50の一部を樹脂ケース40内に固定すると共に、樹脂ケース40と樹脂ケース41とを一体化している。   Thus, in the present embodiment, the nut 60 is fixed in the resin case 41 so that the surface of the nut 60 protrudes from the resin case 41, and at least a part of the external connection terminal 50 is bent. Is arranged on the nut 60. Then, while holding the resin case 41 and the external connection terminal 50 between the molds, a part of the external connection terminal 50 is fixed in the resin case 40 and the resin case 40 and the resin case 41 are integrated. Yes.

次に、本実施の形態によってもたらされる有利な効果について説明する。
先ず、本実施の形態では、外部接続用端子50を樹脂ケース40に固定した後に、外部接続用端子50を折り曲げるのではなく、予め折り曲げられた外部接続用端子50の一部を樹脂ケース40内に固定している。
Next, advantageous effects brought about by the present embodiment will be described.
First, in the present embodiment, after fixing the external connection terminal 50 to the resin case 40, the external connection terminal 50 is not folded but a part of the external connection terminal 50 bent in advance is placed in the resin case 40. It is fixed to.

これにより、樹脂ケース40表面から延出させた外部接続用端子50の根本部分の樹脂ケース40にクラックが発生することがない。
また、外部接続用端子50を折り曲げた後に、外部接続用端子50表面にめっきを施すので、外部接続用端子50の折り曲げた部分において、めっき膜が裂けたり、剥離することがない。
Thereby, a crack does not generate | occur | produce in the resin case 40 of the root part of the terminal 50 for external connection extended from the resin case 40 surface.
In addition, since the surface of the external connection terminal 50 is plated after the external connection terminal 50 is bent, the plating film does not tear or peel off at the bent portion of the external connection terminal 50.

また、プレス機により予め折り曲げられた外部接続用端子50の一部を樹脂ケース40内に固定することから、外部接続用端子50の折り曲げ加工の自由度が向上する。例えば、樹脂ケース40内の端、狭部にも複雑に折り曲げられた外部接続用端子50を容易に装着できる。   Moreover, since a part of the external connection terminal 50 bent in advance by the press machine is fixed in the resin case 40, the degree of freedom in bending the external connection terminal 50 is improved. For example, the external connection terminals 50 that are bent in a complicated manner can be easily attached to the ends and narrow portions in the resin case 40.

また、肉厚の厚い外部接続用端子50をプレス機により予め折り曲げて、樹脂ケース40内に固定することも可能である。これにより、電気抵抗がより低い外部接続用端子50を樹脂ケース40に搭載することができる。   Further, the thick external connection terminal 50 can be bent in advance by a press machine and fixed in the resin case 40. Thereby, the external connection terminal 50 having a lower electrical resistance can be mounted on the resin case 40.

また、本実施の形態では、外部接続用端子50の貫通孔50hとナット孔60hとの位置合わせを行った後、金型により外部接続用端子50とナット60とを密接させながら、外部接続用端子50の一部を樹脂ケース40内に固定している。   Further, in this embodiment, after the through hole 50h and the nut hole 60h of the external connection terminal 50 are aligned, the external connection terminal 50 and the nut 60 are brought into close contact with each other by a mold. A part of the terminal 50 is fixed in the resin case 40.

これにより、ナット60に接触する外部接続用端子50とナット60の上面60sとが平行になると共に、樹脂ケース41の上面41sからの外部接続用端子50の高さが均一になる。また、外部接続用端子50の貫通孔50hの中心とナット孔60hの中心とを精度よく一致させることができる。   As a result, the external connection terminal 50 contacting the nut 60 and the upper surface 60s of the nut 60 become parallel, and the height of the external connection terminal 50 from the upper surface 41s of the resin case 41 becomes uniform. In addition, the center of the through hole 50h of the external connection terminal 50 and the center of the nut hole 60h can be accurately matched.

また、外部接続用端子50とナット60とを密接させながら、外部接続用端子50の一部を樹脂ケース40内に固定することから、二次成形中に樹脂ケース40の樹脂成分が外部接続用端子50とナット60との間隙に回り込むことがない。   In addition, since a part of the external connection terminal 50 is fixed in the resin case 40 while the external connection terminal 50 and the nut 60 are in close contact, the resin component of the resin case 40 is used for external connection during the secondary molding. It does not go into the gap between the terminal 50 and the nut 60.

また、外部接続用端子50の貫通孔50hとナット孔60hとの位置が精度よく一致することから、貫通孔50h及びナット孔60hの径をより小径にすることができる。これにより、外部接続用端子50と外部接続用端子50に接続する外部端子との接触面積が増加し、外部接続用端子50と前記外部端子との接触抵抗が減少する。   Further, since the positions of the through hole 50h and the nut hole 60h of the external connection terminal 50 coincide with each other with high accuracy, the diameters of the through hole 50h and the nut hole 60h can be made smaller. Thereby, the contact area between the external connection terminal 50 and the external terminal connected to the external connection terminal 50 increases, and the contact resistance between the external connection terminal 50 and the external terminal decreases.

このように、本実施の形態によれば、外部接続用端子を封止した樹脂ケースの品質が向上する。   Thus, according to this Embodiment, the quality of the resin case which sealed the terminal for external connection improves.

半導体装置の要部断面模式図である。It is a principal part cross-sectional schematic diagram of a semiconductor device. 半導体装置の製造方法を説明する要部断面模式図である(その1)。FIG. 3 is a schematic cross-sectional view of a relevant part for explaining the method for producing a semiconductor device (part 1); 半導体装置の製造方法を説明する要部断面模式図である(その2)。FIG. 7 is a schematic cross-sectional view of a relevant part for explaining the method for producing a semiconductor device (part 2); 半導体装置の製造方法を説明する要部断面模式図である(その3)。FIG. 3 is a schematic cross-sectional view of a relevant part for explaining the method for producing a semiconductor device (No. 3). 半導体装置の製造方法を説明する要部断面模式図である(その4)。FIG. 7 is a schematic cross-sectional view of a relevant part for explaining the method for producing a semiconductor device (No. 4). 樹脂ケースの要部図である。It is a principal part figure of a resin case.

符号の説明Explanation of symbols

1 半導体装置
10 金属ベース板
20 絶縁基板
20a 絶縁板
20b,20c,20d 金属箔
30w ボンディングワイヤ
30 半導体素子
30e 主電極
40,41 樹脂ケース
41d 下面
41h 空間部
41s,50s,60s 上面
50 外部接続用端子
50h 貫通孔
60 ナット
60h ナット孔
70 封止用樹脂
80 下金型
81 上金型
DESCRIPTION OF SYMBOLS 1 Semiconductor device 10 Metal base plate 20 Insulating substrate 20a Insulating plate 20b, 20c, 20d Metal foil 30w Bonding wire 30 Semiconductor element 30e Main electrode 40, 41 Resin case 41d Lower surface 41h Space part 41s, 50s, 60s Upper surface 50 Terminal for external connection 50h Through hole 60 Nut 60h Nut hole 70 Resin for sealing 80 Lower mold 81 Upper mold

Claims (3)

締付部材の表面が第1の樹脂ケースから突出するように、前記締付部材を前記第1の樹脂ケース内に固定する工程と、Fixing the tightening member in the first resin case such that the surface of the tightening member protrudes from the first resin case;
少なくとも一部が折り曲げられた外部接続用端子の一部を前記締付部材上に配置する工程と、  Disposing at least a part of the external connection terminal bent on the fastening member;
前記第1の樹脂ケースの下面と前記外部接続用端子の上面とを金型で挟持しプレスしながら、前記外部接続用端子の一部を第2の樹脂ケース内に固定すると共に、前記第1の樹脂ケースと前記第2の樹脂ケースとを一体化する工程と、  While holding and pressing the lower surface of the first resin case and the upper surface of the external connection terminal with a mold, a part of the external connection terminal is fixed in the second resin case, and the first resin case is fixed. Integrating the resin case and the second resin case;
を有することを特徴とする樹脂ケース製造方法。  The resin case manufacturing method characterized by having.
前記外部接続用端子を前記締付部材上に配置する前に、前記外部接続用端子をプレス加工により折り曲げることを特徴とする請求項1記載の樹脂ケース製造方法。2. The resin case manufacturing method according to claim 1, wherein the external connection terminal is bent by press work before the external connection terminal is disposed on the fastening member. 前記締付部材に設けられた孔の中心と前記外部接続用端子に設けられた孔の中心とが一致するように前記外部接続用端子を前記締付部材上に配置することを特徴とする請求項1記載の樹脂ケース製造方法。The external connection terminal is arranged on the tightening member so that the center of the hole provided in the tightening member and the center of the hole provided in the external connection terminal coincide with each other. Item 12. A method for producing a resin case according to Item 1.
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