JP5935374B2 - Manufacturing method of semiconductor module - Google Patents

Manufacturing method of semiconductor module Download PDF

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JP5935374B2
JP5935374B2 JP2012033106A JP2012033106A JP5935374B2 JP 5935374 B2 JP5935374 B2 JP 5935374B2 JP 2012033106 A JP2012033106 A JP 2012033106A JP 2012033106 A JP2012033106 A JP 2012033106A JP 5935374 B2 JP5935374 B2 JP 5935374B2
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semiconductor module
manufacturing
external terminal
groove
module according
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JP2013171870A (en
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祐平 西田
祐平 西田
傳田　俊男
俊男 傳田
竜也 雁部
竜也 雁部
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Fuji Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Description

本発明は、電力変換装置などに用いられるパワー半導体モジュールとその製造方法に関する。   The present invention relates to a power semiconductor module used in a power converter and the like and a manufacturing method thereof.

パワー半導体モジュールには、電力変換用途のスイッチングデバイスとして用いられるＩＧＢＴ（絶縁ゲートバイポーラトランジスタ）の複数個が絶縁回路基板上に搭載されている。詳細には、この半導体モジュールは、ＩＧＢＴ４ｂと、逆並列接続のフリーホイールダイオード（ＦＷＤ４ａ）とを１セットとしてその複数セットの半導体素子を、絶縁回路基板上に、例えば図２に示すインバータ回路の半導体素子構成になるように一体に配線組立される構成を有する。   In a power semiconductor module, a plurality of IGBTs (insulated gate bipolar transistors) used as switching devices for power conversion are mounted on an insulating circuit substrate. More specifically, this semiconductor module includes an IGBT 4b and an anti-parallel connected freewheel diode (FWD 4a) as a set, and a plurality of sets of semiconductor elements are arranged on an insulating circuit board, for example, the semiconductor of the inverter circuit shown in FIG. It has a configuration in which wiring is assembled integrally so as to have an element configuration.

このようなパワー半導体モジュールとして組み立てたデバイスの断面構造を、図３を参照して説明する。金属基板１０１上に固着された絶縁回路基板１０２上にパワーＩＧＢＴ１０３を半田により固着し、ＩＧＢＴ１０３の上部電極１０４にはワイヤボンディングによりＡｌ線１０５の配線が行なわれ、外部端子１０６に電気的に接続される。金属基板１０１上の絶縁回路基板１０２全体を取り囲むように金属基板１０１の外周に枠状の樹脂ケース１０７が固着される。この樹脂ケース１０７と金属基板１０１上とで構成される内側空間には絶縁性の封止樹脂材１０８が充填されパワー半導体モジュール１００にされる。   A cross-sectional structure of a device assembled as such a power semiconductor module will be described with reference to FIG. The power IGBT 103 is fixed to the insulating circuit substrate 102 fixed on the metal substrate 101 by soldering, and the Al wire 105 is wired to the upper electrode 104 of the IGBT 103 by wire bonding and is electrically connected to the external terminal 106. The A frame-shaped resin case 107 is fixed to the outer periphery of the metal substrate 101 so as to surround the entire insulating circuit substrate 102 on the metal substrate 101. An inner space formed by the resin case 107 and the metal substrate 101 is filled with an insulating sealing resin material 108 to form the power semiconductor module 100.

ここでパワー半導体モジュール１００から外へ引き出される外部端子１０６については、樹脂ケース１０７に設けた孔に外部端子を挿入して端子を外部に引き出す構造が記載された文献がある（特許文献１）。外部端子をインサート成型により予め樹脂ケースと一体化した樹脂ケースを使用する構造も知られている（特許文献２）。さらにインサート成型した樹脂ケースから引き出された外部端子の先端を折り曲げて、図３に示すように樹脂ケースの外周部のネジ穴に埋め込まれたナットにネジで固定する外部端子を備える構造（特許文献３）などが従来から用いられている。   Here, with respect to the external terminal 106 drawn out from the power semiconductor module 100, there is a document describing a structure in which an external terminal is inserted into a hole provided in a resin case 107 and the terminal is pulled out (Patent Document 1). A structure using a resin case in which an external terminal is integrated with a resin case in advance by insert molding is also known (Patent Document 2). Furthermore, the structure is provided with an external terminal which is bent at the tip of the external terminal drawn out from the insert-molded resin case and fixed to the nut embedded in the screw hole in the outer peripheral portion of the resin case as shown in FIG. 3) etc. are conventionally used.

特開２００９−２０６２６９号公報（図１）Japanese Patent Laying-Open No. 2009-206269 (FIG. 1) 特開２００７−３３５６３２号公報（図１）JP 2007-335632 A (FIG. 1) 特開２０１０−９８０３６号公報（図１）JP 2010-98036 A (FIG. 1)

前述の構造のパワー半導体モジュール１００を組み立てる際には、半導体チップ（ＩＧＢＴ１０３）を絶縁回路基板１０２上に半田接合し、複数の外部端子１０６の下端を絶縁回路基板１０２に半田付けした後、Ａｌ線１０５のワイヤボンディングにより上部電極１０４から所要の配線接続を施し、樹脂ケース１０７を金属基板１０１の外周に装着する工程が採用される。   When assembling the power semiconductor module 100 having the above-described structure, a semiconductor chip (IGBT 103) is soldered onto the insulating circuit board 102, and the lower ends of the plurality of external terminals 106 are soldered to the insulating circuit board 102, and then an Al wire. A process of applying a required wiring connection from the upper electrode 104 by wire bonding 105 and mounting the resin case 107 on the outer periphery of the metal substrate 101 is employed.

一方、このような半導体モジュール１００では、電力変換装置の所定の位置へ半導体モジュールを取り付ける際の必要から、その複数の外部端子１０６の配置を正確にしなければならない。しかし、外部端子１０６を絶縁回路基板１０２上に半田付けした後、金属基板１０１に樹脂ケース１０６を装着する組み立て工程では、樹脂ケース１０６そのものは低コストで成型可能になるが、外部端子１０６の半田付け、外部端子１０６の曲げなどの工程の際に、外部端子１０６の位置、配置にずれが生じ易いという問題がある。外部端子１０６の配置を正確にするためには、樹脂ケース１０７と外部端子１０６をインサート成型により樹脂に埋め込んで正確な位置に予め固定しておく構造が好ましいが、インサート成型は高価な成型金具を用いて樹脂内に外部端子を埋め込んで成型するため高コストである。   On the other hand, in such a semiconductor module 100, it is necessary to accurately arrange the plurality of external terminals 106 because it is necessary to attach the semiconductor module to a predetermined position of the power conversion device. However, in the assembly process of attaching the resin case 106 to the metal substrate 101 after soldering the external terminal 106 on the insulating circuit board 102, the resin case 106 itself can be molded at low cost. In the process of attaching and bending the external terminal 106, there is a problem that the position and arrangement of the external terminal 106 are likely to be shifted. In order to accurately arrange the external terminals 106, a structure in which the resin case 107 and the external terminals 106 are embedded in resin by insert molding and fixed in advance in an accurate position is preferable. It is expensive because it is molded by embedding external terminals in the resin.

さらに外部端子１０６を埋め込んで樹脂成型された外部端子１０６の半田接合は、樹脂の耐熱性の問題から半導体素子（ＩＧＢＴ１０３）の半田接合とは別工程とする必要があるため、半田工程が少なくとも２回は必要であるので、プロセスコストもかかる。   Further, the solder bonding of the external terminal 106 formed by embedding the external terminal 106 and resin-molded needs to be a separate process from the solder bonding of the semiconductor element (IGBT 103) due to the problem of heat resistance of the resin. Since the process is necessary, the process cost also increases.

本発明は以上説明した点を考慮してなされたものであり、本発明の目的は、正確な外部端子の配置を有する半導体モジュールを低コストにする半導体モジュールとその製造方法の提供である。   The present invention has been made in view of the above-described points, and an object of the present invention is to provide a semiconductor module and a method for manufacturing the same, which can reduce the cost of a semiconductor module having an accurate external terminal arrangement.

本発明は前記課題を解決するために、絶縁回路基板上の金属箔回路の所定の位置への半導体素子と複数の外部端子の下端との半田付け接合工程、半導体素子の所要の配線接続工程、前記絶縁回路基板の外周に固着され前記絶縁回路基板に垂直方向に立ち上がる樹脂ケースの内側と該内側の棚状の樹脂突出部の上面とに設けられている溝部に、前記外部端子の前記樹脂ケースの内側に対応する位置を押圧することにより前記外部端子を押し込み嵌合させると共に、外部端子を樹脂ケースの内側に沿って前記絶縁回路基板に垂直方向に折り曲げる工程を備える半導体モジュールの製造方法とする。 In order to solve the above-described problems, the present invention provides a solder bonding process between a semiconductor element and lower ends of a plurality of external terminals to a predetermined position of a metal foil circuit on an insulating circuit board, a required wiring connection process of the semiconductor element, The resin case of the external terminal is provided in a groove provided on the inner side of the resin case that is fixed to the outer periphery of the insulating circuit board and rises in the vertical direction on the insulating circuit board, and on the upper surface of the shelf-like resin protrusion on the inner side. A method of manufacturing a semiconductor module comprising a step of pressing and fitting the external terminal by pressing a position corresponding to the inner side of the substrate, and bending the external terminal along the inner side of the resin case in a direction perpendicular to the insulating circuit board. .

また、前記絶縁回路基板が絶縁性セラミック基板に金属箔回路が固着された構成を有し、銅基板上に半田接合されている構造であってもよい。
また、前記溝部の底部がフラットなコの字状、Ｕ字状またはＶ字状のいずれかであり、前記外部端子の前記溝部に押し込まれる部分の幅または厚さが前記溝部の幅または深さと略等しいことがより好ましい。 Further, the insulating circuit board may have a configuration in which a metal foil circuit is fixed to an insulating ceramic substrate and may be soldered onto a copper substrate.
In addition, the bottom of the groove is flat U-shaped, U-shaped or V-shaped, and the width or thickness of the portion to be pushed into the groove of the external terminal is equal to the width or depth of the groove. More preferably, they are approximately equal.

さらに、前記樹脂ケースの内側の棚状の樹脂突出部の先端上面のエッジが面取りされていることも好ましい。
前記複数の半導体素子が複数の絶縁ゲート型バイポーラトランジスタと該絶縁ゲート型バイポーラトランジスタに逆並列接続されるフリーホイールダイオードであることも好ましい。さらに、前記封止樹脂材料がエポキシ樹脂であることも好適である。 Furthermore, it is also preferable that the edge of the upper surface of the front end of the shelf-shaped resin protrusion inside the resin case is chamfered.
It is also preferable that the plurality of semiconductor elements are a plurality of insulated gate bipolar transistors and a free wheel diode connected in reverse parallel to the insulated gate bipolar transistors. Furthermore, it is also preferable that the sealing resin material is an epoxy resin.

本発明によれば、正確な外部端子の配置を持った半導体モジュールを低コストにする半導体モジュールとその製造方法を提供することができる。   According to the present invention, it is possible to provide a semiconductor module that can reduce the cost of a semiconductor module having an accurate external terminal arrangement and a method for manufacturing the same.

本発明の半導体モジュールの断面図である。It is sectional drawing of the semiconductor module of this invention. 一般的なインバータ回路図である。It is a general inverter circuit diagram. 従来の半導体モジュールの断面図である。It is sectional drawing of the conventional semiconductor module. 本発明の半導体モジュールに用いられる樹脂ケースであり、（ａ）は平面図、（ｂ）は（ａ）のＡ−Ａ'線断面図である。It is a resin case used for the semiconductor module of this invention, (a) is a top view, (b) is the sectional view on the AA 'line of (a). 本発明の半導体モジュールを製造する際に用いられる端子曲げ治具で端子を曲げることを説明するための断面図である。It is sectional drawing for demonstrating bending a terminal with the terminal bending jig | tool used when manufacturing the semiconductor module of this invention. 本発明の半導体モジュールの製造方法を説明するための製造工程フロー図である。It is a manufacturing process flowchart for demonstrating the manufacturing method of the semiconductor module of this invention. 本発明の半導体モジュールにかかる外部端子の位置を決めて固定するための樹脂ケースの溝部の図２の（ａ）の拡大断面図を示し、（ａ）は矩形、（ｂ）は丸型、（ｃ）は三角であることを説明するための外部端子の溝部の断面図である。FIG. 2A is an enlarged cross-sectional view of FIG. 2A of a groove portion of a resin case for determining and fixing the position of an external terminal according to the semiconductor module of the present invention, where (a) is a rectangle, (b) is a round shape, c) is a cross-sectional view of a groove portion of an external terminal for explaining that it is triangular. タイバーで一端を連結した外部端子の平面図である。It is a top view of the external terminal which connected the end with the tie bar.

以下、本発明の半導体モジュールにかかる実施例について、図面を参照して詳細に説明する。なお、以下の実施例の説明および添付図面において、同様の構成には同一の符号を付し、重複する説明を省略する。また、実施例で説明される添付図面は、見易くまたは理解し易くするために正確なスケール、寸法比で描かれていない場合がある。本発明はその要旨を超えない限り、以下に説明する実施例の記載に限定されるものではない。   Hereinafter, embodiments of the semiconductor module of the present invention will be described in detail with reference to the drawings. In the following description of the embodiments and the accompanying drawings, the same reference numerals are given to the same components, and duplicate descriptions are omitted. In addition, the accompanying drawings described in the embodiments may not be drawn with an accurate scale and dimensional ratio in order to make the drawings easy to see or understand. The present invention is not limited to the description of the examples described below unless it exceeds the gist.

本発明の実施例１にかかる半導体モジュール５０では、図１の断面図に示すように、厚さが数ミリの絶縁回路基板１の金属箔回路３上には、錫（Ｓｎ）−銀（Ａｇ）系などの鉛フリー半田によりＩＧＢＴなどのスイッチング素子４ｂやフリーホイールダイオード（以降ＦＷＤ４ａ）などの半導体素子と外部端子６などが固着されている。さらに、スイッチング素子４ｂの上部電極はワイヤボンディングによりアルミワイヤの一端が固着され、他端は外部端子６に電気的に接続される。ＦＷＤ４ａのアノードカソードもそれぞれ所要の接続を施される。この絶縁回路基板１は、アルミニウムベース基板１ａの表面に、例えばアルミナのような無機物の微粒子を分散させて良好な熱伝導性としたエポキシ樹脂からなる絶縁層２を介して金属箔回路３を所要の回路パターン状に固着させたものである。   In the semiconductor module 50 according to Example 1 of the present invention, as shown in the cross-sectional view of FIG. 1, tin (Sn) -silver (Ag) is formed on the metal foil circuit 3 of the insulating circuit board 1 having a thickness of several millimeters. The semiconductor element such as the switching element 4b such as IGBT and the free wheel diode (hereinafter referred to as FWD 4a) and the external terminal 6 are fixed by lead-free solder such as). Further, the upper electrode of the switching element 4 b is fixed to one end of an aluminum wire by wire bonding, and the other end is electrically connected to the external terminal 6. The anode and cathode of the FWD 4a are also connected as required. This insulating circuit board 1 requires a metal foil circuit 3 through an insulating layer 2 made of an epoxy resin having good thermal conductivity by dispersing inorganic fine particles such as alumina on the surface of an aluminum base board 1a. These are fixed in a circuit pattern.

前述の絶縁回路基板１ではアルミニウムベース基板１ａを用いたが、銅ベース基板とすることもできる。また、絶縁回路基板としてはアルミナ系セラミック板の表面に所要の回路パターンを有する金属箔回路を直接固着させ、銅などの金属ベース板上に半田接合させる構造の基板としてもよい。   In the above-described insulated circuit board 1, the aluminum base substrate 1a is used, but a copper base substrate may be used. The insulating circuit board may be a board having a structure in which a metal foil circuit having a required circuit pattern is directly fixed on the surface of an alumina-based ceramic board and soldered onto a metal base board such as copper.

前記絶縁回路基板１上には、前述のようにＦＷＤ４ａ、スイッチング素子４ｂなどの半導体素子が所定の位置に搭載されている。スイッチング素子４ｂは、ＩＧＢＴ、パワーＭＯＳＦＥＴなどであってよい。これらの半導体素子は回路配線等により電気的に接続されることにより、例えば、図２に示すインバータ回路が構成される。その際、スイッチング素子４ｂの上面側の主電極には、ボンディングワイヤの一端が接合される。ボンディングワイヤの他端は金属箔回路の所定の位置に接合される。外部端子６の下端は前記ボンディングワイヤが接合された金属箔回路の所定の位置の近傍に半田付けされる。   On the insulating circuit board 1, semiconductor elements such as the FWD 4a and the switching element 4b are mounted at predetermined positions as described above. The switching element 4b may be an IGBT, a power MOSFET, or the like. These semiconductor elements are electrically connected by circuit wiring or the like, so that, for example, the inverter circuit shown in FIG. 2 is configured. At that time, one end of a bonding wire is bonded to the main electrode on the upper surface side of the switching element 4b. The other end of the bonding wire is bonded to a predetermined position of the metal foil circuit. The lower end of the external terminal 6 is soldered in the vicinity of a predetermined position of the metal foil circuit to which the bonding wire is bonded.

本発明にあっては、下端が半田付けされた外部端子６の位置は多少の位置ずれがあっても良い。そして前記絶縁回路基板１の外周端に樹脂ケース７を装着し固着する。   In the present invention, the position of the external terminal 6 to which the lower end is soldered may be slightly displaced. Then, a resin case 7 is attached and fixed to the outer peripheral end of the insulating circuit board 1.

次に、本発明では、前述のように、下端が半田付けされた外部端子６の位置が必ずしも正確な位置ではなくても、図４に示すように、樹脂ケース７の内側に設けられた棚状の樹脂突出部の上部および樹脂ケースの上部内側の所定の正確な位置に設けられた溝１０に外部端子６の一部を嵌合挿入させることにより、外部端子６の位置を正確に修正し固定することができる。しかも、外部端子６を樹脂ケース７に埋め込んで成型する成型樹脂法により位置決めするよりも安価となることも特徴の一つである。   Next, according to the present invention, as described above, even if the position of the external terminal 6 soldered at the lower end is not necessarily an accurate position, as shown in FIG. The position of the external terminal 6 is accurately corrected by fitting and inserting a part of the external terminal 6 into the groove 10 provided at a predetermined accurate position inside the upper part of the resin protrusion and the upper part of the resin case. Can be fixed. Moreover, it is one of the features that the cost is lower than positioning by the molding resin method in which the external terminal 6 is embedded in the resin case 7 and molded.

前述の樹脂ケース７に設けられる複数の溝１０は溝間の寸法や相互位置が正確というだけでなく、外部端子６を挿入して固定する部分の外部端子６の幅とほぼ同一の溝幅とすることが好ましい。溝１０の深さｄ１及びｄ２は外部端子６の板厚と同程度が好ましい。外部端子６の幅や板厚は電流容量によって適宜決められる。溝１０の深さが板厚より浅いと外部端子６を溝１０に充分に押し込めず、また、溝１０から飛び出た外部端子６が押圧されて潰れて変形する惧れがあるからである。深すぎると樹脂ケース７が押圧治具に直接当たってダメージを受ける惧れがある。   The plurality of grooves 10 provided in the resin case 7 are not only accurate in dimension and mutual position between the grooves, but also have a groove width substantially the same as the width of the external terminal 6 in a portion where the external terminal 6 is inserted and fixed. It is preferable to do. The depths d1 and d2 of the groove 10 are preferably about the same as the thickness of the external terminal 6. The width and thickness of the external terminal 6 are appropriately determined depending on the current capacity. This is because if the depth of the groove 10 is shallower than the plate thickness, the external terminal 6 cannot be fully pushed into the groove 10 and the external terminal 6 that has jumped out of the groove 10 may be pressed and crushed and deformed. If it is too deep, the resin case 7 may directly hit the pressing jig and be damaged.

さらに、この溝１０は、前記絶縁回路基板１を固定するために、樹脂ケース７の枠の内周側に形成されている棚状の樹脂突出部の上面と樹脂ケース７の上部の内側表面に形成されている。   Further, the groove 10 is formed on the upper surface of the shelf-shaped resin protrusion formed on the inner peripheral side of the frame of the resin case 7 and the inner surface of the upper portion of the resin case 7 in order to fix the insulating circuit board 1. Is formed.

溝１０は、図４（ｂ）の破線で示すように、樹脂ケース７の棚状の樹脂突出部の上面と樹脂ケース７の枠上部の表面の両方に跨って形成されることが好ましい。
さらに、外部端子６の下端と樹脂ケース７との距離が極近い場合、樹脂ケース７の棚状の樹脂突出部の上面の最内側のエッジに面取りＣがされていると、外部端子６を溝１０に押し込み治具を用いて押し込む際に外部端子６を傾斜させ易くなるので好ましい。外部端子６が傾斜していると、外部端子６の適切な位置に押し込み治具を押し当て易くなり、溝１０への押し込みが容易になるからである。また、溝１０の形状として、特に溝底部の形状としては、図７に示すように、（ａ）矩形溝１５（底部がフラットなコの字状）、（ｂ）丸型溝１６（底部がＵ字状）、（ｃ）三角溝１７（底部がＶ字状）など、どのような形状でもよい。 The groove 10 is preferably formed so as to straddle both the upper surface of the shelf-shaped resin protrusion of the resin case 7 and the upper surface of the frame of the resin case 7 as indicated by the broken line in FIG.
Further, when the distance between the lower end of the external terminal 6 and the resin case 7 is extremely short, if the chamfer C is chamfered on the innermost edge of the upper surface of the shelf-like resin protrusion of the resin case 7, the external terminal 6 is grooved. It is preferable because the external terminal 6 can be easily inclined when being pushed into the outer wall 10 using a pushing jig. This is because when the external terminal 6 is inclined, it becomes easy to press the pushing jig into an appropriate position of the external terminal 6 and the pushing into the groove 10 becomes easy. Further, as the shape of the groove 10, particularly as the shape of the groove bottom, as shown in FIG. 7, (a) a rectangular groove 15 (a flat U-shaped bottom), (b) a round groove 16 (the bottom is Any shape such as a U-shape), (c) a triangular groove 17 (V-shaped bottom) may be used.

また、樹脂ケース７の材質は、例えば、ガラス繊維で強化されたエポキシ樹脂やＰＰＳ（ポリ・フェニレン・サルファイド）樹脂とすることができる。さらに、前記絶縁回路基板１とこの基板１に装着された樹脂ケース７とで構成される空間には封止樹脂８が充填される。封止樹脂８の材質は、例えば、柔軟なゲル状樹脂とすることができる。封止樹脂８としてゲル状樹脂を用いる場合はこのゲル状樹脂を覆うエポキシ樹脂などの高硬度の蓋を必要とする。また、封止樹脂８として、エポキシ樹脂を主成分とする高硬度の樹脂注形による樹脂封止とすることもできる。   The material of the resin case 7 can be, for example, an epoxy resin reinforced with glass fiber or a PPS (polyphenylene sulfide) resin. Further, a sealing resin 8 is filled in a space formed by the insulating circuit board 1 and the resin case 7 attached to the board 1. The material of the sealing resin 8 can be, for example, a flexible gel resin. When a gel resin is used as the sealing resin 8, a high-hardness lid such as an epoxy resin covering the gel resin is required. Further, the sealing resin 8 may be resin sealing by high-hardness resin casting mainly composed of epoxy resin.

次に、半導体モジュール５０の製造方法について、以下、図４、５、６、８を参照して詳細に説明する。図４は樹脂ケース７の平面図（ａ）とＡ−Ａ’線断面図（ｂ）である。図５は外部端子６を樹脂ケース７の溝１０に押し込んで位置決めをするために、押し込み治具１１ａを用いていることを示す断面図、図６は本発明にかかる半導体モジュールの製造工程を説明するための工程フロー図である。図８は複数の外部端子６の外部側の一端がタイバーで連結されたリードフレームの平面図である。   Next, a method for manufacturing the semiconductor module 50 will be described in detail below with reference to FIGS. 4A is a plan view of the resin case 7 and FIG. 4B is a cross-sectional view taken along line A-A ′. FIG. 5 is a cross-sectional view showing that the pushing jig 11a is used to push the external terminal 6 into the groove 10 of the resin case 7 for positioning, and FIG. 6 explains the manufacturing process of the semiconductor module according to the present invention. It is a process flow figure for doing. FIG. 8 is a plan view of a lead frame in which one end on the outer side of the plurality of external terminals 6 is connected by a tie bar.

先ず、図６（ａ）に示すように、絶縁回路基板１上の金属箔回路３の所定の位置に、半導体素子４ａ、４ｂおよび図８に示すタイバー１３で一端を連結した外部端子６、連結されていない他端側を下端として載せて、半田付けにより同時に固着する。このとき、外部端子６は図６（ａ）に示すように、最終の形状のように垂直にはせず、上端が開いた状態にしておく。次のワイヤボンディング配線作業をやり易くするためである。外部端子６の先端を開く角度は基板面から３０度程度の角度に開くと、ワイヤボンディング配線作業を問題なく行える。   First, as shown in FIG. 6A, the external terminals 6 connected at one end with the semiconductor elements 4a, 4b and the tie bar 13 shown in FIG. The other end that is not mounted is placed as the lower end and is fixed together by soldering. At this time, as shown in FIG. 6A, the external terminal 6 is not made vertical as in the final shape, but the upper end is left open. This is to facilitate the next wire bonding wiring operation. When the angle of opening the tip of the external terminal 6 is about 30 degrees from the substrate surface, wire bonding wiring work can be performed without any problem.

半田は半田板を用いるかまたは半田クリームのパターン印刷により塗布し、半導体素子チップなどを半田上に載せてリフロー炉に通して半田接合させる。この構造に寄れば、外部端子６と絶縁回路基板１との半田接続を部品の半田付けと同時に行うことで、半田付け工程を従来の２回から１回に短縮できる。ＩＧＢＴなどのスイッチング素子４ｂの上面側のアルミニウム電極と所要の金属箔回路３間をワイヤボンディングにより接続する（ｂ）。開いた外部端子６を曲げて垂直にする（ｃ）。この端子の曲げ角度は垂直には限らない。次の工程で樹脂ケースを取り付ける際に外部端子６が樹脂ケース７と干渉しない程度の角度に曲げられていれば良い。また外部端子６は垂直を超えて曲げられても良い。樹脂ケース７を前記絶縁回路基板１の外周縁に固着させる（ｄ）。   The solder is applied using a solder plate or solder cream pattern printing, and a semiconductor element chip or the like is placed on the solder and passed through a reflow furnace to be soldered. According to this structure, the soldering process can be shortened from two times to one time by performing solder connection between the external terminal 6 and the insulating circuit board 1 simultaneously with soldering of the components. The aluminum electrode on the upper surface side of the switching element 4b such as IGBT and the required metal foil circuit 3 are connected by wire bonding (b). The opened external terminal 6 is bent and made vertical (c). The bending angle of this terminal is not necessarily vertical. It is only necessary that the external terminal 6 be bent at an angle that does not interfere with the resin case 7 when the resin case is attached in the next step. The external terminal 6 may be bent beyond the vertical. The resin case 7 is fixed to the outer peripheral edge of the insulated circuit board 1 (d).

次に、図５の断面図に示すように、下部台座１１ｂの上に前記図６（ｄ）工程を終えた組み立てワークを載せ、この組み立てワークの前記絶縁回路基板１に垂直方向に立直する外部端子６を樹脂ケース７に接触する程度まで傾斜させて外部端子６の先端を開く。このとき樹脂ケース７と外部端子６の下端との間の距離が近いと、外部端子６を前述のように基板面から３０度以上に傾斜させ難く、先端の開く角度が小さくなることがあるので、樹脂ケース６の棚状の樹脂突出部の上面の内側線端部を図４（ｂ）に示すように、面取り加工をしておくと傾斜させ易くなり、外部端子６の先端を開き易くなるので好ましい。図６（ｄ）には垂直方向から傾斜させた外部端子６を二点鎖線で参考として示してある。   Next, as shown in the cross-sectional view of FIG. 5, the assembled work after the step of FIG. 6 (d) is placed on the lower pedestal 11b, and the external part of the assembled work that stands upright in the direction perpendicular to the insulated circuit board 1 is placed. The tip of the external terminal 6 is opened by inclining the terminal 6 to the extent that it contacts the resin case 7. At this time, if the distance between the resin case 7 and the lower end of the external terminal 6 is short, it is difficult to incline the external terminal 6 from the substrate surface by 30 degrees or more as described above, and the opening angle of the tip may be small. As shown in FIG. 4 (b), the inner line end of the upper surface of the shelf-like resin protrusion of the resin case 6 is easy to be inclined and the tip of the external terminal 6 is easily opened. Therefore, it is preferable. In FIG. 6D, the external terminal 6 inclined from the vertical direction is shown as a reference by a two-dot chain line.

図５に示すように、押圧治具１１ａを外部端子６に当て、樹脂ケース７の棚状の樹脂突出部上面と樹脂ケースの内側に形成されている溝１０に外部端子６の一部を押し込み嵌合させる。溝１０に押し込まれた外部端子６は図６（ｅ）のように前記絶縁回路基板１に対してほぼ垂直にすることができる。そのような押圧治具１１ａとして、図５に示すように、押圧治具１１ａの先端押圧部１２が樹脂ケース７の内周部に内接する幅であって、先端押圧部１２の内側に、半導体素子およびアルミボンディングワイヤなどに接触しない程度の凹部１８を備えた形状が好ましい。材質はアルミ合金などが好ましい。先端押圧部１２は、図５で見て押圧治具外側寄りで外部端子６に当接する部分に平面を有している。押圧治具は、その側面が図５にあるように下広がりの斜面となっていると、外部端子６を押圧する際に折り曲がった外部端子６を逃げることができるので好ましい。   As shown in FIG. 5, the pressing jig 11 a is applied to the external terminal 6, and a part of the external terminal 6 is pushed into the upper surface of the shelf-like resin protruding portion of the resin case 7 and the groove 10 formed inside the resin case. Fit. The external terminal 6 pushed into the groove 10 can be made substantially perpendicular to the insulated circuit board 1 as shown in FIG. As such a pressing jig 11 a, as shown in FIG. 5, the tip pressing portion 12 of the pressing jig 11 a has a width inscribed in the inner peripheral portion of the resin case 7, and a semiconductor is formed inside the tip pressing portion 12. A shape having a recess 18 that does not come into contact with an element, an aluminum bonding wire, or the like is preferable. The material is preferably an aluminum alloy. The tip pressing portion 12 has a flat surface at a portion in contact with the external terminal 6 on the outer side of the pressing jig as seen in FIG. It is preferable that the pressing jig has a side surface with a downwardly expanding slope as shown in FIG. 5 because the bent external terminal 6 can escape when the external terminal 6 is pressed.

また、図４（ａ）に示す樹脂ケース７の内周部に形成されている棚状の樹脂突出部の上面の最内側のエッジは、前述のように面取りが施されていることが好ましい。この面取り形状により、図６（ｄ）で垂直状態の外部端子６を再度開く際に、開く角度（傾斜）を大きくし易くなるので、押圧治具１１ａによる外部端子６の溝１０への押し込み作業が容易になるメリットがある。   Moreover, it is preferable that the innermost edge of the upper surface of the shelf-shaped resin protrusion formed on the inner peripheral portion of the resin case 7 shown in FIG. 4A is chamfered as described above. This chamfered shape makes it easier to increase the opening angle (inclination) when the external terminal 6 in the vertical state is reopened in FIG. 6D, so that the pressing operation of the external terminal 6 into the groove 10 by the pressing jig 11a is facilitated. There is a merit that makes it easier.

外部端子６は押圧治具１１ａによりその樹脂ケースの内側に対応する位置が押圧されて溝１０に押し込まれることになるが、複数の外部端子６がそれぞれ対応する溝１０に対し位置ずれは各外部端子について同一方向であって、各外部端子６は一端がタイバーにより連結されているので押圧治具１１ａにより押し込まれる際に各外部端子６が協働して溝１０にならうよう嵌合されるように作用するので、位置ずれがあっても外部端子６を溝１０に嵌合させることができる。これは、各外部端子６の一端が連結されていない場合にあっても、連結されている場合よりも効果が小さいものの、複数の外部端子６がそれぞれ対応する溝１０に対し位置ずれがあっても、溝１０にならうよう嵌合されるようになる効果がある。   The external terminal 6 is pressed into the groove 10 by pressing the position corresponding to the inside of the resin case by the pressing jig 11a. Since the terminals are in the same direction and one end of each external terminal 6 is connected by a tie bar, the external terminals 6 are fitted together so as to follow the groove 10 when they are pushed by the pressing jig 11a. Thus, the external terminal 6 can be fitted into the groove 10 even if there is a positional shift. This is because even when one end of each external terminal 6 is not connected, the effect is smaller than when connected, but the plurality of external terminals 6 are misaligned with respect to the corresponding grooves 10 respectively. Also, there is an effect of being fitted so as to follow the groove 10.

また、外部端子６の幅は溝の幅とほぼ同じ幅にされているので、外部端子６の位置は溝１０の位置に正確に決めることができる。本実施例では図５にあるように図６(ｄ)工程を終えた組み立てワークを下部台座１１ｂに載せた状態で押圧治具１１ａのよる外部端子６の処理を行ったが、組み立てワークを下部台座１１ｂに載せかえることなく図６(ｄ)工程に連続して行っても良い。組み立てワークを下部台座１１ｂに載せかえて外部端子６の処理を行った場合は、図６(ｄ)工程までは組み立てワークを試作用作業台のように比較的柔軟な台座に置いて行うことができるため試作工程のように比較的少ない数量の組み立てを行うのに適している。量産工程においては、図５の工程を含め、図６（ａ）から図６（ｅ）の工程を同一の強固な作業台上で行い、図５の工程にある組み立てワークの下部台座１１ｂへの載せかえを行わなくとも良い。   Further, since the width of the external terminal 6 is substantially the same as the width of the groove, the position of the external terminal 6 can be accurately determined as the position of the groove 10. In this embodiment, as shown in FIG. 5, the processing of the external terminal 6 by the pressing jig 11a is performed in a state where the assembled work after the step of FIG. 6 (d) is placed on the lower base 11b. You may carry out continuously to the process of FIG.6 (d), without mounting on the base 11b. When the assembly work is placed on the lower pedestal 11b and the external terminal 6 is processed, the assembly work can be placed on a relatively flexible pedestal like a prototype work table until the step of FIG. 6 (d). Therefore, it is suitable for assembling a relatively small quantity as in the prototype process. In the mass production process, including the process of FIG. 5, the processes of FIGS. 6A to 6E are performed on the same solid work table, and the assembly work in the process of FIG. There is no need to replace it.

次に図６（ｆ）に示すように、樹脂ケース７の内周側の空間にエポキシ樹脂を注形すれば、この注形樹脂によっても前記外部端子６が固定されることになる。注形樹脂として柔らかいゲル状樹脂を注形した場合は最上部に外部端子６が通る孔を設けたエポキシ樹脂などの高硬度の樹脂蓋で覆うことが好ましい。この場合にあって、外部端子６は溝１０に嵌合しているのでエポキシ樹脂の収縮、膨張があっても外部端子６の位置は正確な位置にとどまる効果がある。その後、列状に並ぶ複数の外部端子６の上端を相互に連結しているタイバー部分を切り落とせば、図１に示す半導体モジュール５０が完成する。   Next, as shown in FIG. 6 (f), if an epoxy resin is cast in the space on the inner peripheral side of the resin case 7, the external terminal 6 is also fixed by this casting resin. When a soft gel-like resin is cast as the casting resin, it is preferably covered with a high-hardness resin lid such as an epoxy resin provided with a hole through which the external terminal 6 passes at the top. In this case, since the external terminal 6 is fitted in the groove 10, the position of the external terminal 6 remains at an accurate position even if the epoxy resin contracts or expands. Thereafter, by cutting off the tie bar portions connecting the upper ends of the plurality of external terminals 6 arranged in a row, the semiconductor module 50 shown in FIG. 1 is completed.

本発明によれば上述のように外部端子６が回路基板に対し位置ずれがあっても正確な位置に外部端子６が配置された半導体モジュールとしてはを提供することができる。また、外部端子をインサート成型する場合のように高価な成型金具を用いることもなく低コストな半導体モジュールを提供することができる。   According to the present invention, it is possible to provide a semiconductor module in which the external terminals 6 are arranged at accurate positions even when the external terminals 6 are misaligned with respect to the circuit board as described above. Further, it is possible to provide a low-cost semiconductor module without using an expensive molding fitting as in the case of insert molding of the external terminal.

１ 絶縁回路基板
１ａ アルミニウムベース基板
２ 絶縁層
３ 金属箔回路
４ａ ＦＷＤ
４ｂ ＩＧＢＴ、スイッチング素子
５ アルミワイヤ
６ 外部端子
７ 樹脂ケース
８ 封止樹脂
１０ 溝部
１１ａ 押圧治具
１１ｂ 下部台座
１２ 先端押圧部
１３ タイバー
１４ 樹脂突出部
１５ 矩形溝
１６ 丸型溝
１７ 三角溝
１８ 凹部
５０ 半導体モジュール
１００ パワー半導体モジュール
１０１ 金属基板
１０２ 絶縁回路基板
１０３ ＩＧＢＴ
１０４ 上部電極
１０５ Ａｌ線
１０６ 外部端子
１０７ 樹脂ケース
１０８ 封止樹脂材
1 Insulating circuit board 1a Aluminum base board 2 Insulating layer 3 Metal foil circuit 4a FWD
4b IGBT, switching element 5 Aluminum wire 6 External terminal 7 Resin case 8 Sealing resin 10 Groove 11a Pressing jig 11b Lower base 12 Tip press 13 Tie bar 14 Resin protrusion 15 Rectangular groove 16 Round groove 17 Triangle groove 18 Recess 50 Semiconductor module 100 Power semiconductor module 101 Metal substrate 102 Insulated circuit substrate 103 IGBT
104 Upper electrode 105 Al wire 106 External terminal 107 Resin case 108 Sealing resin material

Claims (10)

絶縁回路基板上の金属箔回路の所定の位置への半導体素子と複数の外部端子の下端との半田付け接合工程、半導体素子の所要の配線接続工程、前記絶縁回路基板の外周に固着され前記絶縁回路基板に垂直方向に立ち上がる樹脂ケースの内側と該内側に突出する棚状の突出部上面とに設けられている溝部に、前記外部端子の前記樹脂ケースの内側に対応する位置を押圧することにより前記外部端子を押し込み嵌合させると共に、外部端子を樹脂ケースの内側に沿って前記絶縁回路基板に垂直方向に折り曲げる工程を備えることを特徴とする半導体モジュールの製造方法。Soldering and joining process of semiconductor element and lower ends of a plurality of external terminals to predetermined positions of metal foil circuit on insulating circuit board, required wiring connection process of semiconductor element, fixed to the outer periphery of the insulating circuit board and insulated By pressing the position corresponding to the inside of the resin case of the external terminal to the groove provided on the inside of the resin case rising in the vertical direction on the circuit board and the upper surface of the shelf-like protruding portion protruding to the inside A method of manufacturing a semiconductor module, comprising: pressing and fitting the external terminals; and bending the external terminals along the inner side of the resin case in a direction perpendicular to the insulating circuit board. 前記絶縁回路基板が金属基板上に絶縁層を介して前記金属箔回路を備える構造であることを特徴とする請求項１記載の半導体モジュールの製造方法。 2. The method of manufacturing a semiconductor module according to claim 1, wherein the insulating circuit substrate has a structure including the metal foil circuit on a metal substrate through an insulating layer. 前記絶縁回路基板が絶縁性セラミック基板に金属箔回路が固着された構成を有し、銅基板上に半田接合されていることを特徴とする請求項１記載の半導体モジュールの製造方法。 2. The method of manufacturing a semiconductor module according to claim 1, wherein the insulating circuit substrate has a configuration in which a metal foil circuit is fixed to an insulating ceramic substrate and is solder-bonded on a copper substrate. 前記溝部の底部がフラットなコの字状であることを特徴とする請求項１記載の半導体モジュールの製造方法。 2. The method of manufacturing a semiconductor module according to claim 1, wherein the bottom of the groove has a flat U shape. 前記溝部の底部がＵ字状またはＶ字状であることを特徴とする請求項１記載の半導体モジュールの製造方法。 2. The method of manufacturing a semiconductor module according to claim 1, wherein the bottom of the groove is U-shaped or V-shaped. 前記外部端子の前記溝部に押し込まれる部分の幅が前記溝部の幅と略等しいことを特徴とする請求項４または５に記載の半導体モジュールの製造方法。 6. The method of manufacturing a semiconductor module according to claim 4, wherein the width of the portion of the external terminal that is pushed into the groove is substantially equal to the width of the groove. 前記外部端子の前記溝部に押し込まれる部分の厚さが前記溝部の深さに略等しいことを特徴とする請求項６記載の半導体モジュールの製造方法。 The method of manufacturing a semiconductor module according to claim 6, wherein a thickness of a portion of the external terminal that is pushed into the groove is substantially equal to a depth of the groove. 前記樹脂ケースの内側に突出する棚状の突出部の先端上面のエッジが面取りされていることを特徴とする請求項７記載の半導体モジュールの製造方法。 8. The method of manufacturing a semiconductor module according to claim 7 , wherein the edge of the upper surface of the tip of the shelf-like protruding portion protruding inside the resin case is chamfered. 前記複数の半導体素子が複数の絶縁ゲート型バイポーラトランジスタと該絶縁ゲート型バイポーラトランジスタに逆並列接続されるフリーホイールダイオードであることを特徴とする請求項１記載の半導体モジュールの製造方法。 2. The method of manufacturing a semiconductor module according to claim 1, wherein the plurality of semiconductor elements are a plurality of insulated gate bipolar transistors and a freewheel diode connected in reverse parallel to the insulated gate bipolar transistors. 前記封止樹脂がエポキシ樹脂であることを特徴とする請求項１記載の半導体モジュールの製造方法。 2. The method of manufacturing a semiconductor module according to claim 1, wherein the sealing resin is an epoxy resin.
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