JP2012248907A - Power semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent a mold resin from entering and adhering to an external terminal part in a power semiconductor device molded from a resin.SOLUTION: In the power semiconductor device which includes a heat sink 5, an insulating layer 6 provided on a main surface of the heat sink, a plurality of wiring patterns 7 provided on a main surface of the insulating layer, a plurality of external terminals 2 and 3 provided so as to contact the plurality of wiring patterns, a connecting member 12 of thermoplastic resin for connecting the plurality of external terminals with one another, and a resin case body 1 of thermoplastic resin covering the insulating layer 6 and the wiring patterns 7, occurrence of cracks of the resin case body 1 due to an external force is prevented as well as enabling simplification of a manufacture process by causing rigidity of the thermoplastic resin composing the connecting member 12 to be higher than that of the thermoplastic resin composing the resin case body 1.

Description

  The present invention relates to a power semiconductor device that constitutes a casing by injecting a mold resin into a mold, and suppresses the generation of resin burrs in the vicinity of external terminals and prevents the occurrence of cracks in a package due to external force It is about.

  In a conventional power semiconductor device, for example, as in the power semiconductor device disclosed in Patent Document 1, it is common to perform transfer molding using a thermosetting resin such as an epoxy resin. In such a power semiconductor device, when sufficient accuracy is not obtained in the mold, the epoxy resin enters and adheres to the terminal portion, and it is necessary to remove the epoxy resin adhered at the time of finishing. For this reason, in Patent Document 1, the epoxy resin enters and adheres to the terminal portion by bringing the output terminal block in which the external terminals are integrated into contact with the mold by a connecting member made of a heat resistant resin such as an epoxy resin. Is preventing.

JP-A-8-125114 (FIG. 1)

  However, even if an output terminal block integrated by such a connecting member is used, it is difficult to completely prevent the epoxy resin from entering and adhering to the terminal portion. That is, in order to bring the output terminal block into contact with the mold, it is necessary to manufacture the output terminal block so that the distance from the contact surface of the external terminal to the semiconductor element to the connecting member is determined with high accuracy. In a method of forming an output terminal block by setting an external terminal in a mold and injecting an epoxy resin as in the conventional example, it is difficult to obtain an output terminal block in which the above distance is maintained with high accuracy. In addition, the contact surface of the external terminal with respect to the semiconductor element is bent, but such bending is generally performed after molding with the epoxy resin, but the distance varies due to the processing variation. Arise. Furthermore, even if an output terminal block in which the above distance is maintained with high accuracy is obtained, it is necessary to consider the variation in solder thickness when soldering the external terminal and the semiconductor element.

  As described above, in the output terminal block, if the distance from the contact surface of the external terminal to the semiconductor element to the connecting member is not maintained with high accuracy, there is a slight gap between the output terminal block and the mold during molding. Since a large gap is generated, the epoxy resin also enters and adheres to the terminal portion through the gap, and so-called burrs adhere. For this reason, this deburring operation has become indispensable, resulting in a complicated manufacturing process. Otherwise, an expensive high-precision mold is required, resulting in an increase in cost. Furthermore, the resin forming the package needs to use a low-viscosity resin having a low molecular weight in order to seal the semiconductor element at a relatively low pressure. There was a risk of cracks in the package due to external force

  The present invention was made to solve the above-described problems, and its purpose is to prevent mold resin from entering and adhering to external terminal portions in a power semiconductor device that is injection-molded with a thermoplastic resin. An electric power semiconductor device is to be provided.

  In order to achieve the above object, a power semiconductor device according to the present invention includes a heat sink, an insulating layer provided on the main surface of the heat sink, and a plurality of wirings provided on the main surface of the insulating layer. A pattern, a plurality of external terminals provided in contact with the plurality of wiring patterns, a connecting member made of a thermoplastic resin that interconnects the plurality of external terminals, the insulating layer, the wiring pattern, and the And a casing made of a thermoplastic resin covering the external terminal, wherein the thermoplastic resin constituting the connecting member is higher in rigidity than the thermoplastic resin constituting the casing.

  Because of the above configuration, the molding resin does not enter and adhere to the external terminal part during molding, and the manufacturing process can be simplified by eliminating the need for subsequent deburring work, or at a low cost. In addition, the cost can be reduced and a highly rigid connecting member reinforces the package and prevents cracking of the package.

1 is a perspective view showing a first embodiment of a power semiconductor device according to the present invention. FIG. 1 is a cross-sectional view taken along the line AA in FIG. FIG. 2 is a perspective view showing an internal structure of the power semiconductor device of FIG. 1 before molding. It is sectional drawing which shows an example of the installation state of components in the shaping die of the power semiconductor device of FIG. It is sectional drawing which shows the other example of the installation state of components in the shaping die of the power semiconductor device of FIG. It is sectional drawing of Embodiment 2 of the power semiconductor device which concerns on this invention. It is sectional drawing which shows the modification of Embodiment 2 of the power semiconductor device which concerns on this invention. It is sectional drawing which shows the modification of Embodiment 2 of the power semiconductor device which concerns on this invention. It is sectional drawing which shows the modification of Embodiment 2 of the power semiconductor device which concerns on this invention. It is a perspective view which shows the internal structure before the shaping | molding of Embodiment 3 of the power semiconductor device which concerns on this invention. It is a perspective view which shows the internal structure before the shaping | molding of Embodiment 4 of the power semiconductor device which concerns on this invention.

<Embodiment 1>
Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a perspective view showing a first embodiment of a power semiconductor device according to the present invention. 2 is a cross-sectional view of the power semiconductor device taken along the line AA in FIG. FIG. 3 is a perspective view showing the internal structure of the power semiconductor device according to the first embodiment of the present invention before molding.

  In FIG. 1, an electric power semiconductor device 100 has an outer shape formed by a resin casing 1 made of polyphenylene sulfide resin (PPS resin), which is a thermoplastic resin whose strength is improved by blending glass fibers, for example, and enters the outside. External terminals such as a plurality of input / output terminals 2 and a plurality of signal terminals 3 for output are exposed from the upper surface. In addition, the power semiconductor device 100 has a mounting hole 4 for fixing itself to a heat radiating fin or the like in the resin casing 1. In FIG. 2, the power semiconductor device 100 includes a radiator plate 5 having a length of 40 mm × width of 70 mm and a thickness of 2 mm, which is made of a high heat conductive material such as copper or aluminum, so as to be exposed on the bottom surface. A plurality of wiring patterns 7 made of copper having a thickness of 0.3 mm are provided on the heat sink 5 with an insulating layer 6 interposed therebetween. The insulating layer 6 is made of, for example, an epoxy resin containing an insulating heat conductive filler such as alumina or aluminum nitride as a base material. The insulating layer 6 insulates the heat sink 5 and the plurality of wiring patterns 7 and also has an adhesive for fixing them. Also serves as.

  In FIG. 3, on the plurality of wiring patterns 7, IGBTs 8 and diodes 9 which are power semiconductor elements are joined on the back surface thereof with solder based on Sn—Ag—Cu. The IGBT 8 has a quadrangular shape, for example, a length of 7.5 mm × width of 9 mm, a thickness of 170 μm, a gate electrode and an emitter electrode on the front surface, and a collector electrode on the back surface. The diode 9 has a rectangular shape, for example, 4 mm long × 9 mm wide and 250 μm thick, and has an anode electrode on the front surface and a cathode electrode on the back surface.

  The emitter electrode of the IGBT 8 and the anode electrode of the diode 9 are made of, for example, Sn—Ag—Cu as a base material by a plate-like lead 10 made of a copper plate having a thickness of 0.3 mm and a width of 6 mm and appropriately bent. One end of the plate-like lead 10 is connected to one of the plurality of wiring patterns 7. It is preferable to connect the power semiconductor elements such as the IGBT 8 and the diode 9 with such a plate-like lead 10 when handling a large current. As in the present embodiment, the size of the lateral sides orthogonal to the wiring direction of the plate leads 10 of the IGBT 8 and the diode 9 are made equal, and the IGBT 8 and the diode 9 are juxtaposed so that the lateral sides face each other. Since the shape of the plate-like lead is simple, it is preferable for alignment. The gate electrode of the IGBT 8 is connected to one of the plurality of wiring patterns 7 by another signal lead 11.

  The plurality of wiring patterns 7 are further connected to external terminals such as a plurality of input / output terminals 2 or a plurality of signal terminals 3. The plurality of input / output terminals 2 are connected to each other by a connecting member 12, and the plurality of signal terminals 3 are also connected to each other by the connecting member 12, and each constitutes a separate terminal block. The connecting member 12 is made of a PPS resin, which is a thermoplastic resin whose strength is improved by blending glass fibers, as in the case of the resin case 1, and as shown in FIG. A part of the surface is exposed.

  Such a power semiconductor device is assembled as follows. First, the insulating layer 6 is disposed on the heat sink 5, a plurality of wiring patterns 7 are disposed at predetermined positions on the insulating layer 6, and the heat sink 5, the insulating layer 6, and the plurality of wiring patterns 7 are bonded by thermocompression bonding. Stick. Next, the IGBT 8 and the diode 9 are joined to a predetermined position on the wiring pattern fixed on the heat sink 6 by soldering. Next, the plate-like lead 10, the signal lead 11, the terminal block constituted by the plurality of signal terminals 3 and the connecting member 12, and the terminal block constituted by the plurality of input / output terminals 2 and the connecting member 12 are arranged in a predetermined wiring pattern. Join the top with solder. Finally, the assembly is placed in a molding die, the resin casing 1 is molded by injection molding using PPS resin, and then a nut (not shown) for tightening the input / output terminal 2 is screwed. The power semiconductor device shown in FIG. 1 is completed by placing the input / output terminal 2 in a bending process (not shown).

  The final injection molding process will be further described in detail. An example of the installation state of the components in the molding die is shown in FIG. The assembly is installed at a predetermined position of the lower mold 13 which is one of the molding dies. In order to determine the mounting position of the heat sink 5, a positioning pin 13b having a height of about 200 μm and 1 mm × 3 mm is provided on the lower mold 13 so that it can be moved up and down by hydraulic pressure or air pressure. The positioning pin 13b can be lowered after being installed at the position. The positioning pin 13b can be shared with an ejector pin that takes out a molded product from a molding die after molding. After the assembly is installed in the molding die, a plurality of input / output terminals 2 and a plurality of signal terminals 3 are accommodated in a terminal lead-out groove 14a provided in the upper die 14 which is the other of the molding die. Then, the upper mold 14 and the lower mold 13 are clamped. At this time, the connecting member 12 that connects external terminals such as the plurality of input / output terminals 2 or the plurality of signal terminals 3 is in contact with the upper mold 14 so as to cover the terminal lead-out grooves 14a.

  FIG. 5 shows an example in which the parts are installed upside down in the molding die. The assembly is installed in the lower mold 13 which is one of the molding dies, and external terminals such as the plurality of input / output terminals 2 or the plurality of signal terminals 3 are accommodated in the terminal lead-out grooves 13a. Since the mounting position of the heat sink 5 is determined by the position of the terminal lead-out groove 13a, a positioning pin as shown in FIG. 4 is unnecessary. After the assembly is installed in the molding die, the upper die 14 and the lower die 13 which are the other of the molding die are clamped. At this time, the connecting member 12 that connects external terminals such as the plurality of input / output terminals 2 or the plurality of signal terminals 3 is in contact with the lower mold 13 so as to cover the opening of the terminal lead-out groove 13a. .

  In the example of FIG. 4, the PPS resin, which is a thermoplastic resin melted at about 300 ° C., is injected into the cavity in the molding die from the injection gate 14b of the molding die thus installed. . When PPS resin is filled in the molding die and pressure is applied, the connecting member 12 is pressed against the upper mold wall surface around the terminal lead-out groove 14a by a resin pressure of about 40 MPa. Here, since the connecting member 12 is also made of the same thermoplastic resin, PPS resin. When the connecting member 12 comes into contact with the molten PPS resin injected from the injection gate 14b, the connecting member 12 is softened by the heat and the resin pressure is increased. In combination with this, in order to completely seal the slight gap formed between the upper mold 14 and the connecting member 12, the injected resin enters the terminal lead-out groove 14a through the gap and as a result, burrs are generated. To prevent it. Although the description in the example of FIG. 5 is omitted, it is the same as above.

  The terminal block in the present embodiment may be manufactured by a method (insert molding) in which an external terminal is set in a mold and PPS resin is injected and molded as in the conventional example, but corresponds to the external terminal in advance. It is preferable to prepare a connecting member 12 having an appropriate through-hole formed at a position and to manufacture the external terminal by press-fitting the through-hole into the through-hole (outsert molding). When the upper mold 14 and the lower mold 13 are clamped, the upper mold 14 comes into contact with the connecting member 12 and the connecting member 12 is externally connected to the extent that pressure is applied between the upper mold 14 and the connecting member 12. This is because the pressure can be maintained within the range of the frictional force between the through hole of the connecting member 12 and the external terminal. If it is insert molding, since it is necessary to take into account the clearance between the external terminal and the mold, it is difficult to suppress variations in the relative position between the external terminal and the connecting member 12 or between the plurality of external terminals. However, in the case of outsert molding, the variation in the relative position between the external terminal and the connecting member 12 can be absorbed by the above-mentioned sliding, and the variation in the relative position between the plurality of external terminals is determined by the processing accuracy of the mold. This is suitable for preventing the mold resin from entering and adhering to the terminal portion during molding.

  When the terminal block is manufactured by such outsert molding, a slight gap may occur between the through hole of the connecting member 12 and the external terminal, but in the power semiconductor device according to the present embodiment, During filling of the high-temperature PPS resin in the subsequent injection molding step, the gap is sealed by the softening of the PPS resin of the connecting member 12 and pressurization by the filling pressure, so that the penetration of moisture through the gap There is no decrease in reliability at high temperature and high humidity.

  As shown in FIG. 2, the connecting member 12 preferably has such a shape that its width increases as it goes from the surface of the resin casing to the inside of the resin casing. This is to prevent the boundary surface from being peeled off by the stress generated on the boundary surface between the resin casing 1 and the connecting member 12 when the device 100 is screwed in the mounting hole 4.

  Further, the connecting member 12 may be made of a highly rigid PPS resin having a large molecular weight and an increased amount of filler such as glass fiber. The resin forming the resin casing 1 needs to use a low-viscosity resin having a small molecular weight in order to seal the IGBT 8 and the diode 9 which are semiconductor elements at a relatively low pressure. Therefore, there was a risk that the package would crack due to external force applied in the bending process or screwing process of the external terminal, etc., but by using the high rigidity PPS resin as the material of the connecting member 12 as described above, There is no longer a possibility that the package is cracked by being reinforced by the connecting member 12.

  As described above, in the power semiconductor device according to the embodiment of the present invention, the material of the connecting member 12 that connects the external terminals to each other is a thermoplastic resin such as PPS resin, and the resin casing 1 is configured. Since the material is also a thermoplastic resin such as PPS resin, the connecting member 12 is brought into contact with the upper die 14 so as to cover the terminal lead-out groove 14a provided in the upper die 14 of the molding die at the time of injection molding. By doing so, it is possible to prevent the injected resin from entering the terminal lead-out groove 14a through the gap and, as a result, generating burrs.

<Embodiment 2>
FIG. 6 is a sectional view of a power semiconductor device according to a second embodiment of the present invention. The perspective view of the present embodiment is the same as FIG. 1 as the perspective view of the first embodiment, and FIG. 6 is a sectional view taken along the line BB of FIG. The difference from the first embodiment is that the input / output terminal 2 is provided with a bent portion 2a, and the other configuration is the same as the configuration shown in the first embodiment.

  In the present embodiment, the terminal block includes the connecting member 12 and the input / output terminal 2 provided with the bent portion 2a between the connecting member 12 and the contact surface of the input / output terminal 2 with respect to the wiring pattern 7. . An assembly in which such a terminal block is joined together with other parts onto a predetermined wiring pattern by soldering is installed at a predetermined position of the lower mold 13 of the molding die in the same manner as in the first embodiment, and the inside of the upper mold 14 The upper die 14 and the lower die 13 are clamped so that the plurality of input / output terminals 2 and the plurality of signal terminals 3 are accommodated in the terminal lead-out grooves 14 a provided in the upper part. In this process, the upper die 14 comes into contact with the connecting member 12 and applies a force to push down the connecting member 12 by the clamping force, so that a slight deflection occurs in the bent portion 2a. When the terminal block is manufactured by outsert molding, the connecting member 12 slides to the bent portion 2a, but stops at the bent portion 2a, so that the bent portion 2a is slightly bent.

  The connecting member 12 is brought into pressure contact with the wall surface of the upper mold 14 by the elastic force caused by the bending of the bent portion 2a. For this reason, even if there is some variation in the distance between the connecting member 12 and the contact surface of the input / output terminal 2 with respect to the wiring pattern 7, there is a gap between the upper mold 14 and the connecting member 12 generated by the variation. The slight gap that has occurred is absorbed by the slight deflection of the bent portion 2a, and in addition, due to the effect of the pressure contact, the injected resin enters the terminal lead-out groove 14a through the gap and as a result, burrs are generated. There is an effect that can be prevented.

  In the power semiconductor device configured as described above, since the terminal height can be defined by the dimensions in the molding die, the accurate terminal height is not affected by the warp in the initial state of the heat sink. Can be obtained. Here, the terminal height refers to the height of the upper surface of the input / output terminal 2 (the surface exposed from the housing) from the back surface of the heat sink 5. Further, it is needless to say that such a bent portion can be provided not only for the input / output terminal 2 but also for the signal terminal 3 and has the same effect. About the shape of the bending part 2a provided in external terminals, such as the input / output terminal 2 and the signal terminal 3, as shown in FIG. 7, it can also be made into the semicircle shape which has a big curvature. This is because by increasing the curvature, it is possible to increase the amount of bending of the bent portion 2a during mold clamping. Further, as shown in FIG. 8, the bent portion 2a may be configured by a plurality of bends. This is because the area occupied by the bent portion 2a in the surface direction of the heat radiating plate 6 is reduced, and the plate-like lead 10 and the like can be arranged close to each other. Further, as shown in FIG. 9, the bent portion 2 a may be a joint portion between the external terminal and the wiring pattern 7. This is because not only the number of times of bending of the external terminals can be reduced, but also the solder fillet 15 can be stably formed by using the curvature of the bent portion, so that variations in the amount of solder can be easily absorbed. .

<Embodiment 3>
FIG. 10 is a perspective view showing the internal structure of the power semiconductor device according to the third embodiment of the present invention before molding. The difference from the first embodiment lies in the shape of the connecting member 12, and the other configuration is the same as the configuration shown in the first embodiment.

  The connecting member 12 is made of PPS resin, has a column portion 12a between connected external terminals, and constitutes a terminal block together with the external terminals. Here, the column portion 12a is in contact with the insulating layer 6 so as to support the terminal block. The strut portion 12a is configured to contact the insulating layer 6 at a position other than a straight line connecting any two of the contact positions of the external terminal to the wiring pattern 7, and the terminal block is arranged on the heat sink 5. It has a self-supporting structure. When the terminal block is soldered to the wiring pattern 7, it is necessary to perform soldering so that the external terminals stand upright. In this way, the support member 12 is provided with the column portion 12 a and is not located on a straight line. As a result, the external terminals are prevented from being soldered to the wiring pattern 7 in a tilted state.

  Further, when the assembly as shown in FIG. 10 is installed in a molding die and clamped, the connecting member 12 is in contact with the insulating layer 6 by the support 12a, so that the surface of the insulating layer 6 and the connecting member 12 are contacted. The distance from the surface facing the upper mold is accurately defined. Due to this, a gap between the connecting member 12 and the upper mold, which may occur if the column portion 12a is not present, causes the injected resin to enter the terminal lead-out groove 14a through the gap and as a result, burrs are generated. The effect that can be prevented.

  In such a configuration, there is a possibility that an unscheduled force may be applied to the insulating layer 6 or the connecting member 12 due to the warp of the heat sink 5 when the mold is clamped, but the connection made of PPS resin. Since the member 12 has a lower elastic modulus than other materials, it is difficult to break, and the terminal lead-out groove 14a is not formed on the mold surface immediately above the portion where the insulating layer 6 and the connecting member 12 are in contact with each other. In addition, since the reaction force of the pressure applied to the insulating layer 6 is received by the surface, it is not necessary to consider cracks caused by the bending of the connecting member 12 and damage to the insulating layer 6.

<Embodiment 4>
FIG. 11 is a perspective view showing the internal structure of the power semiconductor device according to the fourth embodiment of the present invention. The difference from the third embodiment lies in the shape of the connecting member 12, and the other configuration is the same as the configuration shown in the first embodiment.

  In the present embodiment, the connecting member 12 is provided so that four elongated beams form a closed loop on the periphery of the quadrilateral heat sink 5, and connects the plurality of input / output terminals 2 and the plurality of signal terminals 3 together. Terminal block. Even if such a terminal block is manufactured by either insert molding or outsert molding, the portion of the connecting member 12 is manufactured by injecting a PPS resin in which glass fibers are blended into a mold.

  In general, the linear expansion coefficient of the PPS resin in which glass fibers are blended is about 20 ppm / ° C. in the orientation direction of the glass fibers and about 40 ppm / ° C. in the direction orthogonal to the orientation direction of the glass fibers. For example, when the resin casing is formed with a molding die as shown in FIG. 4, the orientation direction of the glass fiber is the long side direction of the resin casing 1 which is the resin flow direction. Therefore, the linear expansion coefficient of the resin casing in the long side direction is about 20 ppm / ° C., which is almost the same as the linear expansion coefficient of copper (about 16 ppm / ° C.) or aluminum (about 23 ppm / ° C.) which is the material of the heat sink 5. The warp of the device due to thermal expansion / contraction does not occur in the long side direction, but the linear expansion coefficient of the resin casing in the short side direction is about 40 ppm / ° C. Therefore, the warp of the device due to thermal expansion / contraction in the short side direction. Occur.

  Here, in the connection member 12 of the terminal block manufactured as described above, since the glass fiber is oriented in the loop direction which is the resin flow direction, the connection member 12 having a four-sided closed loop shape has either a long side or a short side. Also in this direction, the linear expansion coefficient is about 20 ppm / ° C., which is substantially equal to the linear expansion coefficient of the heat sink 5. As disclosed in the present embodiment, such a connecting member 12 is arranged in a four-sided closed loop shape so as to correspond to the periphery of the heat sink 5, thereby warping the apparatus as described above in the short side direction. Can be relaxed. That is, both ends of the long side portion of the four-side closed-loop connecting member 12 are supported by the short side portion having a linear expansion coefficient of about 20 ppm / ° C., thereby suppressing thermal expansion / contraction in the short side direction of the resin casing 1. Because it does. At this time, as described in the first embodiment, by using a high-rigidity PPS resin having a large molecular weight and an increased filling amount of a filler such as glass fiber for the connecting member 12, as described in the first embodiment, the warping of the apparatus is improved. It is also possible to achieve the effect of suppressing the above.

  While specific embodiments of the present invention have been described with reference to the drawings, the present invention is not limited to these and various modifications can be made. For example, in each of the above embodiments, the circuit on the heat sink 5 is a copper plate wiring pattern bonded by an insulating layer 6 based on an epoxy resin, but a ceramic insulating substrate such as alumina or aluminum nitride. The wiring pattern may be a copper plate brazed on top. Although copper is used as the material of the wiring pattern, other metal having good electrical conductivity may be used. The power semiconductor element is a combination of an IGBT and a diode, but may be a MOSFET, a bipolar transistor, a diode, or any other power semiconductor element alone or in any combination. Further, the material of the resin casing 1 and the connecting member 12 is not limited to the PPS resin, and it goes without saying that the same effect can be obtained if it is a thermoplastic resin such as polybutylene terephthalate resin. .

  By applying the power semiconductor device according to the present invention to an industrial motor control device, it is possible to contribute to an improvement in power conversion efficiency of the device.

1 Resin housing
2 Input / output terminal 2a Bent part 3 Signal terminal 4 Mounting hole 5 Heat sink 6 Insulating layer 7 Wiring pattern 8 IGBT
9 Diode 10 Plate-like lead 11 Signal lead 12 Connecting member 13 Lower die 13a Terminal lead groove 13b Positioning pin 14 Upper die 14a Terminal lead groove 14b Injection gate 15 Solder fillet

Claims (4)

A heat sink,
An insulating layer provided on the main surface of the heat sink and a plurality of wiring patterns provided on the main surface of the insulating layer;
A plurality of external terminals provided in contact with the plurality of wiring patterns;
A connecting member made of a thermoplastic resin for connecting the plurality of external terminals to each other;
A housing made of a thermoplastic resin that covers the insulating layer, the wiring pattern and the external terminal;
With
The power semiconductor device, wherein the thermoplastic resin constituting the connecting member is higher in rigidity than the thermoplastic resin constituting the housing. The power semiconductor device according to claim 1, wherein the external terminal has a bent portion between a contact surface with respect to the wiring pattern and a connecting portion of the connecting member. There are at least two external terminals,
The connecting member has a column portion extending so as to contact the insulating layer,
2. The power semiconductor according to claim 1, wherein the support portion is in contact with the insulating layer at a place other than a straight line connecting any two of the contact positions of the external terminal with respect to the wiring pattern. apparatus. The power semiconductor device according to claim 1, wherein a shape of the connecting member is a shape that forms a closed loop at an upper peripheral portion of the heat radiating plate.

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