JP2012243943A - Wire bonding structure, electronic apparatus, and manufacturing method of electronic apparatus - Google Patents

Wire bonding structure, electronic apparatus, and manufacturing method of electronic apparatus Download PDF

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JP2012243943A
JP2012243943A JP2011112422A JP2011112422A JP2012243943A JP 2012243943 A JP2012243943 A JP 2012243943A JP 2011112422 A JP2011112422 A JP 2011112422A JP 2011112422 A JP2011112422 A JP 2011112422A JP 2012243943 A JP2012243943 A JP 2012243943A
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wire
bonding
aluminum
electrode
lead frame
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Hajime Takasaki
一 高崎
Sayaka Kobayashi
紗矢香 小林
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Tokai Rika Co Ltd
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Tokai Rika Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a wire bonding structure, an electronic apparatus, and a manufacturing method of the electronic apparatus which ensure joining strength and joining reliability of bonding and achieve the rationalization and the cost reduction of the bonding process.SOLUTION: A bonding region located in at least one electrode 11, from among a first electrode 21 and a second electrode 11, is composed of: a base for bonding 14 formed by performing ultrasonic bonding to a first aluminum wire 3; and a bond part 2b formed on the base 14 by performing ultrasonic bonding to a second aluminum wire 2. The second aluminum wire 2 is made of a wire narrower than the first aluminum wire 3.

Description

本発明は、ワイヤボンディング構造及び電子装置とその製造方法に関するものである。   The present invention relates to a wire bonding structure, an electronic device, and a manufacturing method thereof.

電子装置においては、ボンディングワイヤを介して、例えばＩＣチップ及び基板の間、基板及び基板の間、あるいは基板及びコネクタの間などを電気的に接続したワイヤボンディング構造を有するものが一般的である。このようなワイヤボンディング構造の一例としては、基板上に搭載したボンディング用のパッド（電極）と、基板及び外部装置間の電気的接続を行うコネクタのターミナル（電極）とをアルミニウム（以下、「アルミ」という。）からなるワイヤで超音波接合する構造が提案されている（例えば、特許文献１参照。）。   An electronic device generally has a wire bonding structure in which, for example, an IC chip and a substrate, a substrate and a substrate, or a substrate and a connector are electrically connected via a bonding wire. As an example of such a wire bonding structure, bonding pads (electrodes) mounted on a substrate and connector terminals (electrodes) for electrical connection between the substrate and an external device are made of aluminum (hereinafter referred to as “aluminum”). A structure in which ultrasonic bonding is performed using a wire made of a material such as “Patent Document 1” has been proposed.

上記特許文献１に記載された従来のワイヤボンディング構造によれば、基板のパッドは、４２アロイを基材として表面に電気Ｎｉ（ニッケル）めっき又は無電解Ｎｉめっきを施しており、基板の表面に形成されたＣｕ（銅）やＡｇ（銀）等の電極上にはんだを介して固定されている。一方のコネクタのターミナルには、黄銅からなる基材の表面に電気Ｎｉめっき又は無電解Ｎｉめっきが施されている。   According to the conventional wire bonding structure described in Patent Document 1 above, the pads of the substrate are subjected to electric Ni (nickel) plating or electroless Ni plating on the surface using 42 alloy as a base material. It is fixed via solder on the formed electrodes such as Cu (copper) and Ag (silver). One terminal of the connector is subjected to electric Ni plating or electroless Ni plating on the surface of a base material made of brass.

基板のパッドとコネクタのターミナルとをワイヤボンディングするアルミワイヤとしては、大電流化に対応するため、直径１５０μｍ、２５０μｍ又は３５０μｍ程度のアルミ太線が用いられる。アルミワイヤを高温に加熱すると、酸化が促進して相手方の電極との接合性が低下するため、アルミワイヤと電極とは常温下で超音波ボンディングを行うことで接合されるのが一般的である。   As an aluminum wire for wire bonding between the board pad and the connector terminal, a thick aluminum wire having a diameter of about 150 μm, 250 μm or 350 μm is used in order to cope with an increase in current. When an aluminum wire is heated to a high temperature, oxidation is promoted and the bondability with the counterpart electrode is lowered. Therefore, the aluminum wire and the electrode are generally bonded by ultrasonic bonding at room temperature. .

特開２００４−２２１３７６号公報JP 2004-221376 A

ところで、この種の電子装置においては、ボンディングワイヤの細線化や狭ピッチ化などに対応して、例えば直径２５〜５０μｍ程度のアルミ細線を用いる場合がある。しかしながら、アルミ太線に比べると、アルミ細線は電極との接合面積を減少させるので、超音波ボンディングによる電極とアルミ細線との電気的接続の接合信頼性が得られにくい。特に、Ｎｉめっきを施した電極にあっては、表面の酸化、汚れや面粗さなどに起因して発生する不具合によってアルミ細線との接合が弱いため、接合強度不足が発生しやすい。   By the way, in this type of electronic device, an aluminum fine wire having a diameter of, for example, about 25 to 50 μm may be used in response to the thinning or narrowing of the bonding wire. However, compared with the thick aluminum wire, the thin aluminum wire reduces the bonding area between the electrode and it is difficult to obtain the bonding reliability of the electrical connection between the electrode and the thin aluminum wire by ultrasonic bonding. In particular, in an electrode plated with Ni, since bonding with an aluminum thin wire is weak due to defects caused by surface oxidation, dirt, surface roughness, etc., insufficient bonding strength is likely to occur.

また、基板の電極上にボンディング用のパッドをはんだ付けする工程をワイヤボンディング工程に組み込むことは、はんだ付け工程とワイヤボンディング工程とが混在する複雑な工程となり、ワイヤボンディング工程の自動化や電子装置の製造工程全体の低コスト化などのための障害となりやすい。   In addition, incorporating the process of soldering the bonding pads onto the electrodes of the substrate into the wire bonding process is a complicated process in which the soldering process and the wire bonding process coexist. It tends to be an obstacle for cost reduction of the entire manufacturing process.

従って、本発明の目的は、ボンディングの接合強度と接合信頼性を確保し、ボンディング工程の合理化と低コスト化とを実現可能としたワイヤボンディング構造及び電子装置とその製造方法を提供することにある。   Accordingly, an object of the present invention is to provide a wire bonding structure, an electronic device, and a manufacturing method thereof that can secure bonding strength and bonding reliability of the bonding and can realize rationalization and cost reduction of the bonding process. .

［１］本発明は、上記目的を達成するため、第１の電極と第２の電極とをワイヤボンディングする少なくとも一方の電極のボンディング領域が、第１のアルミワイヤを超音波接合して形成されたボンディング用の台座と、第２のアルミワイヤを前記台座上に超音波接合して形成されたボンド部とにより構成されており、前記第２のアルミワイヤが前記第１のアルミワイヤよりも細い線材からなることを特徴とするワイヤボンディング構造にある。 [1] In order to achieve the above object, in the present invention, a bonding region of at least one electrode for wire-bonding the first electrode and the second electrode is formed by ultrasonically bonding the first aluminum wire. And a bonding portion formed by ultrasonically bonding a second aluminum wire on the pedestal, and the second aluminum wire is thinner than the first aluminum wire. The wire bonding structure is characterized by comprising a wire.

［２］上記［１］記載のワイヤボンディング構造にあっては、前記第１のアルミワイヤの線径は１００〜３００μｍであり、前記第２のアルミワイヤの線径は２５〜５０μｍであることを特徴とする。 [2] In the wire bonding structure according to the above [1], the wire diameter of the first aluminum wire is 100 to 300 μm, and the wire diameter of the second aluminum wire is 25 to 50 μm. Features.

［３］上記［１］記載のワイヤボンディング構造によると、前記ボンディング領域の前記電極は、表面にニッケルめっきを施してなることを特徴とする。 [3] According to the wire bonding structure described in [1] above, the surface of the electrode in the bonding region is nickel-plated.

［４］本発明では更に、上記目的を達成するため、第１及び第２の電極の少なくとも一方の電極に上記［１］〜［３］のいずれかに記載のワイヤボンディング構造を備えており、前記第２のアルミワイヤを介して前記第１の電極と前記第２の電極とが接続されてなることを特徴とする電子装置が提供される。 [4] In order to achieve the above object, the present invention further includes the wire bonding structure according to any one of the above [1] to [3] on at least one of the first and second electrodes. An electronic device is provided, wherein the first electrode and the second electrode are connected via the second aluminum wire.

［５］本発明では更に、上記目的を達成するため、第１及び第２の電極の少なくとも一方の電極に第１のアルミワイヤにより超音波接合してボンディング用の台座を形成する工程と、前記第１の電極及び前記第２の電極をワイヤボンディングする第２のアルミワイヤを前記台座上に超音波接合する工程とを備え、前記第２のアルミワイヤの線径は、前記第１のアルミワイヤの線径よりも細いことを特徴とする電子装置の製造方法が提供される。 [5] In order to achieve the above object, the present invention further includes a step of ultrasonically bonding at least one of the first and second electrodes with a first aluminum wire to form a bonding base; And a step of ultrasonically bonding a second aluminum wire for wire-bonding the first electrode and the second electrode on the pedestal, wherein the diameter of the second aluminum wire is the first aluminum wire. An electronic device manufacturing method characterized by being thinner than the wire diameter is provided.

本発明によれば、ボンディングの接合強度を保持するとともに、接合信頼性を確保し、更にはボンディング工程の合理化と低コスト化をも実現することが可能となる。   According to the present invention, the bonding strength of bonding can be maintained, the bonding reliability can be ensured, and the rationalization and cost reduction of the bonding process can be realized.

本発明の第１の実施の形態である典型的な電子装置の実装状態を説明するための模式断面図である。It is a schematic cross section for demonstrating the mounting state of the typical electronic device which is the 1st Embodiment of this invention. 電子装置のワイヤボンディング構造を説明するための模式平面図である。It is a schematic plan view for demonstrating the wire bonding structure of an electronic device. 図２のＩＩＩ−ＩＩＩ線矢視の要部断面拡大図である。It is a principal part cross-sectional enlarged view of the III-III line arrow of FIG. 本発明の第２の実施の形態である電子装置の製造方法におけるワイヤボンディング工程を説明するための図であり、（ａ）はボンディング用の台座形成工程を示す図、（ｂ）は（ａ）の次の工程を示す図、（ｃ）は（ｂ）の次の第１ボンディング工程を示す図、（ｄ）は（ｃ）の次のループ形成工程を示す図であり、（ｅ）は（ｄ）の次の第２ボンディング工程を示す図である。It is a figure for demonstrating the wire bonding process in the manufacturing method of the electronic device which is the 2nd Embodiment of this invention, (a) is a figure which shows the base formation process for bonding, (b) is (a). (C) is a figure which shows the 1st bonding process following (b), (d) is a figure which shows the next loop formation process of (c), (e) It is a figure which shows the 2nd bonding process following d).

以下、本発明の好適な実施の形態を添付図面に基づいて具体的に説明する。   Preferred embodiments of the present invention will be specifically described below with reference to the accompanying drawings.

［第１の実施の形態］
（電子装置の構成）
図１において、全体を示す符号１は、電子装置の一構成例を模式的に示している。この電子装置１は、例えばパワーモジュールなどの半導体装置や車両制御用のＥＣＵなどの制御装置として用いられるものである。 [First Embodiment]
(Configuration of electronic device)
In FIG. 1, reference numeral 1 indicating the whole schematically shows a configuration example of an electronic device. The electronic device 1 is used as a control device such as a semiconductor device such as a power module or an ECU for vehicle control.

この電子装置１は、図１に示すように、基板１０と、基板１０にダイボンディング等により固定されたＩＣ部品２０とを備えており、基板１０の一面及びＩＣ部品２０がモールド樹脂３０により被覆されたモールドＩＣ、又はゲル封止にて保護された構造が取られる。   As shown in FIG. 1, the electronic device 1 includes a substrate 10 and an IC component 20 fixed to the substrate 10 by die bonding or the like. One surface of the substrate 10 and the IC component 20 are covered with a mold resin 30. A structure protected by a molded IC or gel sealing is taken.

図示例による基板１０としては、例えば単層又は２層以上の層が積層された多層基板やプリント配線基板などが用いられる。基板１０の材質は、例えば樹脂やセラミックなどからなる。ＩＣ部品２０としては、基板１０の一面上に搭載できるものであれば、特に限定されるものではないが、例えばセンサＩＣ、制御ＩＣ等の各種の半導体素子が挙げられる。モールド樹脂３０としては、例えばエポキシ樹脂などが用いられる。   As the substrate 10 according to the illustrated example, for example, a single layer or a multilayer substrate in which two or more layers are stacked, a printed wiring board, or the like is used. The material of the substrate 10 is made of, for example, resin or ceramic. The IC component 20 is not particularly limited as long as it can be mounted on one surface of the substrate 10, and examples thereof include various semiconductor elements such as a sensor IC and a control IC. For example, an epoxy resin is used as the mold resin 30.

このＩＣ部品２０の上縁部寄りには、図１及び図２に示すように、第１の電極である複数のパッド（電極）２１，…，２１が露出している。一方の基板１０の上面には、複数のパッド２１に対応して、第２の電極である複数のリードフレーム（電極）１１，…，１１が露出している。ＩＣ部品２０のパッド２１と基板１０のリードフレーム１１とはアルミ細線２でボンディングされており、ＩＣ部品２０とリードフレーム１１との間には回路が形成されている。   As shown in FIGS. 1 and 2, a plurality of pads (electrodes) 21,..., 21 that are first electrodes are exposed near the upper edge of the IC component 20. A plurality of lead frames (electrodes) 11,..., 11 as second electrodes are exposed on the upper surface of one substrate 10 corresponding to the plurality of pads 21. The pad 21 of the IC component 20 and the lead frame 11 of the substrate 10 are bonded by the aluminum thin wire 2, and a circuit is formed between the IC component 20 and the lead frame 11.

このパッド２１は、特に限定されるものではないが、１００μｍ角程度の正方形をなしており、ＩＣ部品２０上にアルミ蒸着により形成される。一方、リードフレーム１１にあっても、特に限定されるものではなく、例えば銅や黄銅などの金属からなる基材の表面にワイヤボンディング可能な金属材料をめっき膜あるいは蒸着膜により被覆して形成される。   The pad 21 is not particularly limited, but has a square shape of about 100 μm square, and is formed on the IC component 20 by vapor deposition of aluminum. On the other hand, the lead frame 11 is not particularly limited. For example, the lead frame 11 is formed by coating a metal material capable of wire bonding on the surface of a base material made of metal such as copper or brass with a plating film or a vapor deposition film. The

この第１の実施の形態では、図３に示すように、基材１２の表面にＮｉめっき膜１３が施されている。電解Ｎｉめっきが施されたリードフレーム１１を採用することで、外部との接続を溶接により行うことが可能になる。   In the first embodiment, as shown in FIG. 3, a Ni plating film 13 is applied to the surface of the substrate 12. By employing the lead frame 11 on which electrolytic Ni plating has been applied, it is possible to connect to the outside by welding.

（ワイヤボンディング構造）
以上のように構成された電子装置１は、典型的な一構成例を例示するものであり、この電子装置１の構造、形態や機能などは、特に限定されるものではない。この第１の実施の形態に係る電子装置１の主要な構成は、２つの電極をワイヤボンディングする少なくとも一方の電極のボンディング領域を、線材径が異なる同種材料のワイヤにより電気的に接続するワイヤボンディング構造にある。 (Wire bonding structure)
The electronic device 1 configured as described above exemplifies a typical configuration example, and the structure, form, function, and the like of the electronic device 1 are not particularly limited. The main configuration of the electronic device 1 according to the first embodiment is wire bonding in which bonding regions of at least one electrode for wire-bonding two electrodes are electrically connected by wires of the same material having different wire diameters. In the structure.

この第１の実施の形態に係るワイヤボンディング構造にあっては、図１〜図４に示すように、リードフレーム１１上に形成されたボンディング領域が、第１のアルミワイヤであるアルミ太線３により超音波接合して形成されたボンディング用の台座１４と、この台座１４上に同種材料の第２のアルミワイヤであるアルミ細線２により超音波接合して形成されたセカンドボンド部２ｂとにより構成されている。このアルミ細線２は、アルミ太線３よりも細い線材からなることが肝要である。   In the wire bonding structure according to the first embodiment, as shown in FIGS. 1 to 4, the bonding region formed on the lead frame 11 is formed by the aluminum thick wire 3 that is the first aluminum wire. A pedestal 14 for bonding formed by ultrasonic bonding, and a second bond portion 2b formed on the pedestal 14 by ultrasonic bonding with an aluminum thin wire 2 which is a second aluminum wire of the same material. ing. It is important that the aluminum thin wire 2 is made of a thinner wire than the aluminum thick wire 3.

この台座１４は、リードフレーム１１に対して、アルミ太線３を常温下で超音波接合することでボンディングしたものであり、アルミ太線３の一端を切り離すことで形成される。台座１４とリードフレーム１１との接合面積は大きい接合形態が好ましく、アルミ太線３は、例えば１００〜３００μｍの直径を有する円形の線材からなる。   The pedestal 14 is bonded to the lead frame 11 by ultrasonic bonding of the aluminum thick wire 3 at room temperature, and is formed by cutting one end of the aluminum thick wire 3. The joining form with a large joining area of the base 14 and the lead frame 11 is preferable, and the aluminum thick wire 3 consists of a circular wire which has a diameter of 100-300 micrometers, for example.

一方のセカンドボンド部２ｂは、ファースト側のＩＣ部品２０のパッド２１と接続されたアルミ細線２の一端をセカンド側で接続されたものであり、台座１４に対して、アルミ太線３の線径よりも細い線材からなるアルミ細線２を常温下で超音波接合することでボンディングされている。このアルミ細線２は、例えば２５〜５０μｍの直径を有する円形の線材からなる。   One second bond portion 2b is formed by connecting one end of the aluminum fine wire 2 connected to the pad 21 of the IC component 20 on the first side on the second side, and from the wire diameter of the aluminum thick wire 3 to the base 14. Bonding is performed by ultrasonically bonding an aluminum thin wire 2 made of a thin wire material at room temperature. The aluminum thin wire 2 is made of a circular wire having a diameter of, for example, 25 to 50 μm.

［変形例］
上記ワイヤボンディング構造にあっては、例えば次の変形例を採用することができる。
（１）図示例では、リードフレーム１１に台座１４及びセカンドボンド部２ｂを形成しているが、これに限定されるものではない。この台座１４及びセカンドボンド部２ｂは、例えばパッド２１及びリードフレーム１１の少なくとも一方の電極に形成されていればよい。アルミ細線２との接合が弱いため、接合強度不足が発生しやすい電極に台座１４及びセカンドボンド部２ｂを形成することが好適である。
（２）図示例では、基材１２の表面にＮｉめっき膜１３を施したリードフレーム１１の一例を例示したが、これに限定されるものではない。このリードフレーム１１としては、Ｎｉめっき膜１３を排除して、ワイヤボンディング可能な金属材料、例えば銅や黄銅などの金属材を用いることができる。 [Modification]
In the wire bonding structure, for example, the following modification can be adopted.
(1) In the illustrated example, the pedestal 14 and the second bond portion 2b are formed on the lead frame 11, but the present invention is not limited to this. The base 14 and the second bond portion 2b may be formed on at least one of the electrodes of the pad 21 and the lead frame 11, for example. Since the bonding with the aluminum thin wire 2 is weak, it is preferable to form the pedestal 14 and the second bond portion 2b on an electrode that tends to cause insufficient bonding strength.
(2) In the illustrated example, an example of the lead frame 11 in which the Ni plating film 13 is applied to the surface of the base 12 is illustrated, but the present invention is not limited to this. As the lead frame 11, a metal material capable of wire bonding, for example, a metal material such as copper or brass can be used without the Ni plating film 13.

（第１の実施の形態及び変形例の効果）
上記ワイヤボンディング構造を採用することで、以下の効果が得られる。
（１）アルミ細線２とリードフレーム１１との間の接合強度は、アルミワイヤの線径が細いほど低下するが、アルミ太線３を超音波ボンディングした台座１４上にアルミ細線２を介してボンディングしているため、台座１４とリードフレーム１１との接合面積は大きくなり、台座１４とリードフレーム１１との間の接合強度が増大する。
（２）台座１４とセカンドボンド部２ｂとをアルミからなる同種の材料で超音波ボンディングする構造であるので、アルミ細線２のセカンドボンド部２ｂが台座１４から分離することを防止することが可能となり、超音波ボンディングによるリードフレーム１１とアルミ細線２との電気的な接続の接合信頼性は高い。
（３）ＩＣ部品２０のパッド２１及びリードフレーム１１の接続は、例えば比較的小電流であり、多くのワイヤ接続を必要とするようなＩＣ部品２０に対しては、比較的細いアルミ細線２を用いることで電子装置１の大型化が抑制される。
（４）ボンディングの接合強度と接合信頼性に優れたワイヤボンディング構造を備えた電子装置１が得られるので、例えば高温、低温、又は振動などを受けやすい車載用の使用環境下においても効果的に使用することが可能となる。 (Effect of 1st Embodiment and modification)
By adopting the above wire bonding structure, the following effects can be obtained.
(1) The bonding strength between the aluminum thin wire 2 and the lead frame 11 decreases as the wire diameter of the aluminum wire decreases. However, the bonding strength is bonded to the base 14 on which the aluminum thick wire 3 is ultrasonically bonded via the aluminum thin wire 2. Therefore, the bonding area between the pedestal 14 and the lead frame 11 increases, and the bonding strength between the pedestal 14 and the lead frame 11 increases.
(2) Since the base 14 and the second bond portion 2b are ultrasonically bonded with the same kind of material made of aluminum, it is possible to prevent the second bond portion 2b of the aluminum thin wire 2 from being separated from the base 14. The bonding reliability of electrical connection between the lead frame 11 and the aluminum thin wire 2 by ultrasonic bonding is high.
(3) The connection between the pad 21 of the IC component 20 and the lead frame 11 is, for example, a relatively small current. For the IC component 20 that requires many wire connections, a relatively thin aluminum thin wire 2 is used. By using it, the enlargement of the electronic device 1 is suppressed.
(4) Since the electronic device 1 having a wire bonding structure with excellent bonding strength and bonding reliability can be obtained, it is effective even in an in-vehicle use environment that is susceptible to high temperature, low temperature, vibration, or the like. Can be used.

［第２の実施の形態］
（電子装置の製造方法）
上記のように構成された電子装置１を製造する工程では、定法に従い、基板１０上にリードフレーム１１を形成した後、基板１０上にＩＣ部品２０をダイボンディングなどにより搭載する（ダイボンディング工程）。そのダイボンディング工程後、ＩＣ部品２０のパッド２１と基板１０のリードフレーム１１とをアルミワイヤにより結線する（アルミワイヤボンディング工程）。そのアルミワイヤボンディング工程後、定法に従い、ＩＣ部品２０と基板１０とを図示しない金型に投入し、モールド樹脂３０による封止を行う（樹脂封止工程）。これらの一連の工程を経て、図１に示す電子装置１が完成する。 [Second Embodiment]
(Electronic device manufacturing method)
In the process of manufacturing the electronic device 1 configured as described above, the lead frame 11 is formed on the substrate 10 according to a standard method, and then the IC component 20 is mounted on the substrate 10 by die bonding or the like (die bonding process). . After the die bonding process, the pad 21 of the IC component 20 and the lead frame 11 of the substrate 10 are connected by an aluminum wire (aluminum wire bonding process). After the aluminum wire bonding step, the IC component 20 and the substrate 10 are put into a mold (not shown) and sealed with a mold resin 30 according to a conventional method (resin sealing step). Through these series of steps, the electronic apparatus 1 shown in FIG. 1 is completed.

（アルミワイヤボンディング工程）
この第２の実施の形態に係る電子装置１の製造方法の主要な構成の一部は、アルミワイヤボンディング工程にある。このアルミワイヤボンディング工程は、ボンディング用の台座形成工程、第１のボンディング工程、ループ形成工程、及び第２のボンディング工程を備えた超音波ウエッジボンディング方法により効果的に得られる。このアルミワイヤボンディング工程の主要な構成の一部は、第１のボンディング工程前にボンディング用の台座形成工程を実施することにある。 (Aluminum wire bonding process)
Part of the main configuration of the method for manufacturing the electronic device 1 according to the second embodiment is in the aluminum wire bonding step. This aluminum wire bonding step can be effectively obtained by an ultrasonic wedge bonding method including a pedestal forming step, a first bonding step, a loop forming step, and a second bonding step. A part of the main configuration of the aluminum wire bonding process is to perform a pedestal forming process for bonding before the first bonding process.

以下に、図４（ａ）〜図４（ｅ）を参照しながら、ＩＣ部品２０のパッド２１と基板１０のリードフレーム１１とをアルミワイヤで結線するワイヤボンディング工程について説明する。   The wire bonding process for connecting the pads 21 of the IC component 20 and the lead frame 11 of the substrate 10 with aluminum wires will be described below with reference to FIGS. 4 (a) to 4 (e).

この第２の実施の形態に係るアルミワイヤボンディング工程に適用されるボンディング装置１００は、図４（ａ）〜図４（ｅ）に示すように、平坦な先端面でアルミワイヤに押し当てながら、超音波振動を加えることにより、アルミワイヤをワークにボンディングするウエッジツール１０１を備えている。図示例に限定されるものではないが、このウエッジツール１０１の一側面には、アルミワイヤを保持案内するクランプ機構１０２が備えられている。ウエッジツール１０１の他側面には、ボンディング後にアルミワイヤを切断する上下動可能なカッター１０３が備えられている。   As shown in FIGS. 4A to 4E, the bonding apparatus 100 applied to the aluminum wire bonding step according to the second embodiment is pressed against the aluminum wire with a flat tip surface, A wedge tool 101 for bonding an aluminum wire to a workpiece by applying ultrasonic vibration is provided. Although not limited to the illustrated example, a clamp mechanism 102 for holding and guiding an aluminum wire is provided on one side of the wedge tool 101. On the other side of the wedge tool 101, a cutter 103 that can move up and down to cut the aluminum wire after bonding is provided.

（ボンディング用の台座形成工程）
この台座形成工程では、線径が１００〜３００μｍであるアルミ太線３が用いられる。図４（ａ）において、クランプ機構１０２のクランプが開いてウエッジツール１０１が基板１０に向けて降下すると、アルミ太線３が基板１０のリードフレーム１１上のボンディング位置に接触する。このボンディング位置でウエッジツール１０１によりアルミ太線３を所定の荷重で加圧する。この加圧状態のアルミ太線３に対して所定の強度及び所定の時間をもって超音波を発振させる。これにより、基板１０のリードフレーム１１上にアルミ太線３を超音波接合する。 (Base formation process for bonding)
In this pedestal forming step, an aluminum thick wire 3 having a wire diameter of 100 to 300 μm is used. In FIG. 4A, when the clamp of the clamp mechanism 102 is opened and the wedge tool 101 is lowered toward the substrate 10, the thick aluminum wire 3 contacts the bonding position on the lead frame 11 of the substrate 10. The aluminum thick wire 3 is pressed with a predetermined load by the wedge tool 101 at this bonding position. An ultrasonic wave is oscillated with a predetermined intensity and a predetermined time with respect to the pressed aluminum thick wire 3. Thereby, the aluminum thick wire 3 is ultrasonically bonded onto the lead frame 11 of the substrate 10.

この台座形成工程にはアルミ太線３の切断工程が含まれており、基板１０のリードフレーム１１上にアルミ太線３を超音波接合することで形成された台座１４からアルミ太線３の一端をカッター１０３により切断する。この切断により、図４（ｂ）に示すように、台座１４をリードフレーム１１上に残して、その台座１４からアルミ太線３を切り離すことで、ボンディング用の台座１４が形成される。   This pedestal forming step includes a cutting step of the aluminum thick wire 3. One end of the aluminum thick wire 3 is cut from the pedestal 14 formed by ultrasonic bonding of the aluminum thick wire 3 onto the lead frame 11 of the substrate 10. Cut with. By this cutting, as shown in FIG. 4B, the pedestal 14 is formed by leaving the pedestal 14 on the lead frame 11 and separating the aluminum thick wire 3 from the pedestal 14.

（第１のボンディング工程）
この第１のボンディング工程では、線径が２５〜５０μｍであるアルミ細線２が用いられる。図４（ｃ）において、ＩＣ部品２０のボンディング位置に対し、ウエッジツール１０１によりアルミ細線２を所定の荷重で加圧する。この加圧状態のアルミ細線２に対して所定の強度及び所定の時間をもって超音波を発振させることで、ＩＣ部品２０上にアルミ細線２を超音波接合する。この超音波接合により、ファーストボンド部２ａが形成される。 (First bonding process)
In the first bonding step, an aluminum thin wire 2 having a wire diameter of 25 to 50 μm is used. In FIG. 4 (c), the aluminum wire 2 is pressed with a predetermined load by the wedge tool 101 against the bonding position of the IC component 20. The aluminum thin wire 2 is ultrasonically bonded onto the IC component 20 by oscillating ultrasonic waves with a predetermined intensity and a predetermined time with respect to the pressed aluminum thin wire 2. By this ultrasonic bonding, the first bond portion 2a is formed.

この第２の実施の形態においては、ＩＣ部品２０及びリードフレーム１１をワイヤボンディングで接続する際に、最初にボンディングを行うボンディング部をファーストボンド部２ａとし、次にボンディングを行うボンディング部をセカンドボンド部２ｂとする。なお、ＩＣ部品２０及びリードフレーム１１におけるワイヤボンディングの順序は、どちらが最初であっても構わないことは勿論である。   In the second embodiment, when the IC component 20 and the lead frame 11 are connected by wire bonding, the first bonding portion is the first bonding portion 2a, and the bonding portion that is next bonding is the second bond. This is part 2b. Needless to say, the order of wire bonding in the IC component 20 and the lead frame 11 may be either first.

（ループ形成工程）
このループ形成工程では、第１のボンディング工程が終了した後、アルミ細線２をクランプ機構１０２から供給しながら、ウエッジツール１０１をＩＣ部品２０のボンディング位置からリードフレーム１１の台座１４へ向けて移動する。これにより、図４（ｄ）に示すように、アルミ細線２が所定のループ形状に形成される。 (Loop formation process)
In this loop forming process, after the first bonding process is completed, the wedge tool 101 is moved from the bonding position of the IC component 20 toward the base 14 of the lead frame 11 while supplying the aluminum thin wire 2 from the clamp mechanism 102. . Thereby, as shown in FIG.4 (d), the aluminum fine wire 2 is formed in a predetermined loop shape.

（第２のボンディング工程）
図４（ｄ）において、リードフレーム１１のボンディング用の台座１４上のボンディング位置に対し、ウエッジツール１０１によりアルミ細線２を所定の荷重で加圧する。この加圧状態のアルミ細線２に対して所定の強度及び所定の時間をもって超音波振動を加えることで、リードフレーム１１の台座１４上にアルミ細線２を超音波接合する。 (Second bonding process)
In FIG. 4D, the aluminum wire 2 is pressed with a predetermined load by the wedge tool 101 to the bonding position on the bonding base 14 of the lead frame 11. By applying ultrasonic vibration to the pressed aluminum thin wire 2 with a predetermined strength and a predetermined time, the aluminum thin wire 2 is ultrasonically bonded onto the base 14 of the lead frame 11.

この第２のボンディング工程にはアルミ細線２を切断する工程が含まれており、この切断により、図４（ｅ）において、リードフレーム１１の台座１４上にアルミ細線２を超音波接合させた後、アルミ細線２の一端をカッター１０３により切断する。この超音波接合によりセカンドボンド部２ｂが形成される。   This second bonding step includes a step of cutting the aluminum thin wire 2, and by this cutting, the aluminum thin wire 2 is ultrasonically bonded onto the base 14 of the lead frame 11 in FIG. Then, one end of the aluminum thin wire 2 is cut by the cutter 103. By this ultrasonic bonding, the second bond portion 2b is formed.

このアルミワイヤボンディング工程においては、図４（ａ）及び図４（ｂ）に示す一連の工程を１サイクルとし、図４（ｃ）〜図４（ｅ）に示す一連の工程を次の１サイクルとして超音波接合を繰り返すか、あるいは図４（ａ）〜図４（ｅ）における一連の工程を１サイクルとして超音波接合を繰り返すことで、ＩＣ部品２０のパッド２１と基板１０のリードフレーム１１との全ての電気的接続が実施される。なお、アルミワイヤの切断方法は、アルミワイヤをクランプ機構１０２により保持して上方へ引っ張ることで、ウエッジツール１０１から切り離す方法などであってもよいことは勿論である。   In this aluminum wire bonding step, the series of steps shown in FIGS. 4A and 4B is one cycle, and the series of steps shown in FIGS. 4C to 4E is the next cycle. Or by repeating the ultrasonic bonding with the series of steps in FIGS. 4A to 4E as one cycle, and the lead frame 11 of the IC component 20 and the lead frame 11 of the substrate 10. All electrical connections are made. Of course, the method of cutting the aluminum wire may be a method of cutting the aluminum wire from the wedge tool 101 by holding the aluminum wire by the clamp mechanism 102 and pulling it upward.

（第２の実施の形態の効果）
上記アルミワイヤボンディング工程を採用することで、以下の効果が得られる。
（１）Ｎｉめっき膜１３を施したリードフレーム１１に対しては、表面の酸化、汚れや面粗さなどに起因して発生する不具合によってアルミ細線２との接合が弱いため、接合強度不足が発生しやすい。これに対し、アルミ太線３をリードフレーム１１に超音波ボンディングすることで台座１４を形成するので、常温下で十分な荷重と超音波振動とを加えることができるようになる。その結果、リードフレーム１１上の酸化物などが容易に除去されることになり、十分な接合強度で超音波ボンディングを行うことができる。
（２）アルミ太線３を超音波ボンディングした台座１４上に、台座１４と同種の材料からなるアルミ細線２を常温下で超音波ボンディングするため、台座１４とアルミ細線２とを信頼性の高い接合状態で強固に接合することができる。
（３）線材径が異なる同種材料の２本のワイヤを用い、電極のボンディング領域にワイヤボンディングするので、一連のアルミワイヤボンディング工程中にボンディング用の台座形成工程を容易に組み込むことができるようになり、例えば電子装置の高密度化に伴い、アルミワイヤボンディング工程の自動化や電子装置１の製造工程全体の低コスト化などが実現しやすい。
（４）ＩＣ部品２０のパッド２１や基板１０のリードフレーム１１の配置位置にかかわらず、各種の接続パターンに容易に対応できる汎用性を備えているので、２つの電極をアルミワイヤにより電気的に接続するワイヤボンディング構造であれば、電子装置１の構造、形態や機能などにかかわらず、各種の電子装置１の電気的接続に適用することができる。 (Effect of the second embodiment)
By adopting the aluminum wire bonding step, the following effects can be obtained.
(1) The lead frame 11 provided with the Ni plating film 13 has insufficient bonding strength because the bonding with the aluminum thin wire 2 is weak due to defects caused by surface oxidation, dirt, surface roughness, and the like. Likely to happen. On the other hand, since the base 14 is formed by ultrasonic bonding of the aluminum thick wire 3 to the lead frame 11, a sufficient load and ultrasonic vibration can be applied at room temperature. As a result, oxides on the lead frame 11 are easily removed, and ultrasonic bonding can be performed with sufficient bonding strength.
(2) Since the aluminum fine wire 2 made of the same kind of material as the pedestal 14 is ultrasonically bonded to the pedestal 14 on which the aluminum thick wire 3 is ultrasonically bonded, the pedestal 14 and the aluminum fine wire 2 are bonded with high reliability. It can be firmly joined in the state.
(3) Since two wires of the same material having different wire diameters are used and wire bonding is performed in the electrode bonding region, a pedestal forming process for bonding can be easily incorporated into a series of aluminum wire bonding processes. Thus, for example, with the increase in the density of electronic devices, it is easy to realize automation of the aluminum wire bonding process and cost reduction of the entire manufacturing process of the electronic device 1.
(4) Regardless of the arrangement position of the pad 21 of the IC component 20 or the lead frame 11 of the substrate 10, it has versatility that can easily cope with various connection patterns. Any wire bonding structure to be connected can be applied to electrical connection of various electronic devices 1 regardless of the structure, form, function, etc. of the electronic device 1.

以上の説明からも明らかなように、本発明のワイヤボンディング構造及び電子装置とその製造方法を上記実施の形態、変形例、及び図示例に基づいて説明したが、本発明は上記実施の形態、変形例、及び図示例の中で説明した特徴の組合せの全てが本発明の課題を解決するための手段に必須であるとは限らない点に留意すべきである。本発明の技術思想の範囲内において種々の構成が可能であり、次に示すような他の変形例も可能である。   As is clear from the above description, the wire bonding structure and electronic device of the present invention and the manufacturing method thereof have been described based on the above-described embodiments, modifications, and illustrated examples. It should be noted that not all modifications and combinations of features described in the illustrated examples are necessarily essential to the means for solving the problems of the present invention. Various configurations are possible within the scope of the technical idea of the present invention, and other modifications as shown below are also possible.

ＩＣ部品２０のパッド２１と基板１０のリードフレーム１１との２つの電極に対するワイヤボンディング構造として例示したが、これに限定されるものではない。２つの電極を有するワイヤボンディング構造としては、例えばＩＣ部品及び基板の間、ＩＣ部品及び電源に接続されたバスバーの間、基板及び基板の間、基板及びコネクタの間を電気的に接続したワイヤボンディング構造及び電子装置とその製造方法、あるいはワイヤボンディング用の第１のパッドと第２のパッドとを備えたＩＣ部品などを電気的に接続したワイヤボンディング構造及び電子装置とその製造方法に効果的に適用することができる。   Although illustrated as a wire bonding structure with respect to two electrodes of the pad 21 of the IC component 20 and the lead frame 11 of the substrate 10, it is not limited to this. Examples of the wire bonding structure having two electrodes include wire bonding in which an IC component and a substrate are electrically connected, a bus bar connected to the IC component and a power source, a substrate and the substrate, and a substrate and the connector are electrically connected. Effectively in structure and electronic device and manufacturing method thereof, or wire bonding structure and electronic device in which IC parts including first and second pads for wire bonding are electrically connected, and manufacturing method thereof Can be applied.

１…電子装置、２…アルミ細線、２ａ…ファーストボンド部、２ｂ…セカンドボンド部、３…アルミ太線、１０…基板、１１…リードフレーム、１２…基材、１３…Ｎｉめっき膜、１４…台座、２０…ＩＣ部品、２１…パッド、３０…モールド樹脂、１００…ボンディング装置、１０１…ウエッジツール、１０２…クランプ機構、１０３…カッター DESCRIPTION OF SYMBOLS 1 ... Electronic device, 2 ... Aluminum thin wire, 2a ... First bond part, 2b ... Second bond part, 3 ... Aluminum thick wire, 10 ... Board | substrate, 11 ... Lead frame, 12 ... Base material, 13 ... Ni plating film, 14 ... Base 20 ... IC parts, 21 ... pads, 30 ... mold resin, 100 ... bonding device, 101 ... wedge tool, 102 ... clamp mechanism, 103 ... cutter

Claims (5)

第１の電極と第２の電極とをワイヤボンディングする少なくとも一方の電極のボンディング領域が、第１のアルミワイヤを超音波接合して形成されたボンディング用の台座と、第２のアルミワイヤを前記台座上に超音波接合して形成されたボンド部とにより構成されており、
前記第２のアルミワイヤが前記第１のアルミワイヤよりも細い線材からなることを特徴とするワイヤボンディング構造。 A bonding region of at least one electrode for wire-bonding the first electrode and the second electrode includes a bonding base formed by ultrasonic bonding of the first aluminum wire, and the second aluminum wire It is composed of a bond part formed by ultrasonic bonding on the pedestal,
The wire bonding structure, wherein the second aluminum wire is made of a thinner wire than the first aluminum wire. 前記第１のアルミワイヤの線径は１００〜３００μｍであり、前記第２のアルミワイヤの線径は２５〜５０μｍであることを特徴とする請求項１記載のワイヤボンディング構造。   2. The wire bonding structure according to claim 1, wherein a wire diameter of the first aluminum wire is 100 to 300 μm, and a wire diameter of the second aluminum wire is 25 to 50 μm. 前記ボンディング領域の前記電極は、表面にニッケルめっきを施してなることを特徴とする請求項１記載のワイヤボンディング構造。   The wire bonding structure according to claim 1, wherein the electrode in the bonding region has a surface plated with nickel. 第１及び第２の電極の少なくとも一方の電極に上記請求項１〜３のいずれかに記載のワイヤボンディング構造を備えており、前記第２のアルミワイヤを介して前記第１の電極と前記第２の電極とが接続されてなることを特徴とする電子装置。   The wire bonding structure according to any one of claims 1 to 3 is provided on at least one of the first and second electrodes, and the first electrode and the first electrode are interposed via the second aluminum wire. An electronic device comprising two electrodes connected to each other. 第１及び第２の電極の少なくとも一方の電極に第１のアルミワイヤにより超音波接合してボンディング用の台座を形成する工程と、
前記第１の電極及び前記第２の電極をワイヤボンディングする第２のアルミワイヤを前記台座上に超音波接合する工程とを備え、
前記第２のアルミワイヤの線径は、前記第１のアルミワイヤの線径よりも細いことを特徴とする電子装置の製造方法。 Forming a pedestal for bonding by ultrasonically bonding to at least one of the first and second electrodes with a first aluminum wire;
A step of ultrasonically bonding a second aluminum wire for wire bonding the first electrode and the second electrode on the pedestal,
An electronic device manufacturing method, wherein a diameter of the second aluminum wire is smaller than a diameter of the first aluminum wire.
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