JPH0870082A - Semiconductor integrated circuit device and its manufacture, and lead frame - Google Patents

Abstract

PURPOSE: To improve productivity and heat dissipation of a multipin LSI package, and enable handling of high precision in a production process and a substrate mounting process. CONSTITUTION: In an LSI package 1, the inside of a frame made of resin which is formed in a lead frame is made a cavity, and a semiconductor chip 5 built in a tape carrier package 4 is mounted in the central part of the cavity. The semiconductor chip 5 is bonded to the upper surface of a die pad part 18 via conducting adhesive agent like Ag paste. One end (inner lead part) of a TCP lead 7 is electrically connected with the semiconductor chip 5 via a bump electrode 9. The other end (outer lead part) is electrically connected with one end (inner lead part) of a lead 3 which penetrates a frame body 2 and stretches inside it. At the four corners of the frame body 2, through holes 10 are formed from the upper surface to the rear of the frame body 2.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit device, a method of manufacturing the same, and a lead frame, and more particularly to a technique effective when applied to a multi-pin LSI package having improved productivity and heat dissipation.

[0002]

2. Description of the Related Art A QFP (Quad Flat Package) having leads extending outward from four sides of a package body is widely used as a surface mount package for various multi-pin LSIs such as logic LSIs such as gate arrays and microcomputers. It is popular.

For the QFP, the thickness of the package body is 1 mm
Thinned TQFP (Thin Quad Flat Package with)
Bumper) and SQFP with a lead pitch of 0.5 mm or less
(Shrink Quad Flat Package) or QFP (Quad Flat Packa) with bumpers in which resin bumpers are provided at the four corners of the package body to prevent lead bending during transportation.
ge with Bumper) or QFP (Quad Flat Package) with a guard ring in which the tip of the lead is covered with a resin protection ring
There are various types such as with Guardring).

Surface mount type packages for multi-pin LSI include tape carrier packages (T
ape Carrier Package) is known. A tape carrier package is one in which one end (inner lead part) of a lead formed on an insulating film is connected to a semiconductor chip via a bump electrode and the other end (outer lead part) is soldered to a substrate. Since no bonding wire is used to connect the leads, the package can be made thinner than QFP. Further, since the leads are formed on the insulating film, there is a feature that the lead pitch can be made narrower than in the QFP.

Regarding this type of multi-pin LSI package, JP-A-2-89348 and JP-A-4-7 are available.
It is described in Japanese Patent No. 8148.

[0006]

However, according to the study by the present inventor, the above-mentioned QFP and tape carrier package have the following problems.

(1) Since the number of pins of QFP has been further increased by the improvement of the fine processing technique and the number of leads has been increased to 200 pins or more, it is difficult to use the wire bonding technique and the wire bonding time is long. Turned into
The productivity has decreased significantly.

On the other hand, a tape carrier package for collectively connecting leads and chips (gang bonding) is Q
Bonding time can be shortened compared to FP,
Since soldering to the board has to be performed in a process different from that of other surface mount components, it is difficult to mix-mount with other surface mount components on the same substrate. Further, since the leads of the tape carrier package are thinner and more easily deformed than the leads of the QFP, it is difficult to obtain flatness when mounted on the substrate.
There is a problem in connection reliability with the board.

(2) Since the semiconductor chip of QFP is sealed with resin, the thermal resistance of the package is large. Therefore, when the amount of heat generated by the semiconductor chip increases as the speed of the LSI increases, it is necessary to take measures to efficiently release the heat of the semiconductor chip to the outside. However, even if a heat radiation fin or the like is attached to the surface of the package body, the heat conductivity cannot be efficiently released because the resin has a low thermal conductivity. Although it has been proposed to embed a metal stud in a part of the package body, the resin molding process becomes complicated, and the reliability (moisture resistance, crack resistance, etc.) of the package deteriorates.

(3) Since the external dimensions of the package main body of the QFP are increasing with the increase in the size of semiconductor chips and the increase in the number of pins, it is difficult to handle the QFP in the production process and the board mounting process. Also, as the package body becomes larger, the potential for package cracks due to the difference in the thermal expansion coefficient of each component sealed in the package also increases.

It is an object of the present invention to provide a multi-pin LSI package having a significantly improved productivity.

Another object of the present invention is to provide a multi-pin LSI package capable of efficiently radiating heat of a semiconductor chip to the outside.

Another object of the present invention is to provide a multi-pin LSI package which can be accurately handled in a production process and a board mounting process.

Another object of the present invention is to provide a multi-pin LSI package having a structure in which package cracks hardly occur.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0016]

Of the inventions disclosed in the present application, a representative one will be briefly described below.
It is as follows.

(1) In the semiconductor integrated circuit device of the present invention, a die pad portion on which a semiconductor chip is mounted, a resin frame body provided around the die pad portion and having a hollow central portion, and the frame are provided. A semiconductor chip incorporated in a tape carrier package is mounted on the die pad portion of the lead frame formed by a plurality of leads penetrating the body and extending inside and outside the body, and inside the frame body. The extending lead is electrically connected to the lead of the tape carrier package.

(2) In the semiconductor integrated circuit device of the present invention, the lead extending to the outside of the frame is formed into a shape capable of being surface-mounted, and the surface thereof is plated with solder.

(3) In the semiconductor integrated circuit device of the present invention, a through hole is provided in a part of the frame body from the upper surface to the back surface thereof.

(4) In the semiconductor integrated circuit device of the present invention, a radiation fin is attached to the frame body, and a part of the radiation fin is brought into contact with the back surface of the die pad portion.

[0021]

According to the above means (1), the wire bonding step can be omitted by collectively connecting the leads of the tape carrier package encapsulating the semiconductor chip and the leads of the lead frame. In addition, since the inside of the frame is made hollow, the potential for package cracks is reduced.

According to the above-mentioned means (2), soldering (solder reflow) to the substrate can be performed in the same step as other surface mount components.

According to the above means (3), by providing the frame body with the through hole, the manufacturing process of the LSI package,
Handling in the electrical characteristic inspection process and the board mounting process becomes easy.

According to the above-mentioned means (4), the heat radiation property of the LSI package can be improved by directly contacting the heat radiation fin with the back surface of the die pad portion on which the semiconductor chip is mounted. At that time, by utilizing the through hole provided in the frame body, the radiation fin can be securely and easily attached to the LSI package.

[0025]

Embodiments of the present invention will now be described in detail with reference to the drawings.

FIG. 1 is a perspective view of an LSI package which is an embodiment of the present invention, and FIG. 2 is a sectional view thereof.

The LSI package 1 of this embodiment has a surface mount type package structure in which a large number of leads 3 extend to the outside from four sides of a square frame 2 made of synthetic resin. The frame body 2 has almost the same outer shape as the package body of the QFP, but has a hollow inside, and a tape carrier package (hereinafter, TCP) is formed in the center thereof.
The semiconductor chip 5 incorporated in the (4) 4 is mounted.

The TCP 4 is composed of an insulating film 6 made of a synthetic resin and leads (hereinafter
It is composed of a TCP lead) 7 and a semiconductor chip 5 sealed with potting resin 8. The semiconductor chip 5 is bonded to the upper surface of the die pad portion 18 via a conductive adhesive 17 such as Ag paste. One end (inner lead portion) of the TCP lead 7 is electrically connected to the semiconductor chip 5 via the bump electrode 9, and the other end (outer lead portion) penetrates the frame body 2 and extends inside thereof. It is electrically connected to one end (inner lead portion) of the existing lead 3. Through holes 10 are provided at the four corners of the frame body 2 from the upper surface to the back surface thereof. As will be described later, the through hole 10 is used for various purposes such as mounting a heat radiation fin, handling the LSI package 1 during the manufacturing process, the electrical characteristic inspection process, and the board mounting process.

Next, the manufacturing method of the LSI package 1 will be described in the order of (1) TCP manufacturing step, (2) frame frame lead frame manufacturing step, and (3) TCP frame frame lead frame mounting step. explain.

In order to manufacture the TCP 4, first, as shown in FIG. 3, the semiconductor chip 5 is set on the flat stage 11 and formed on the outer peripheral portion of the main surface of the semiconductor chip 5.
The u-bump electrode 9 and the TCP lead 7 are heated by the heating tool 12
Use to connect all at once. The TCP lead 7 is formed by etching a Cu foil adhered to one surface of the insulating film 6, and the surface thereof is plated with Au.
The portions other than both ends of the TCP lead 7 are covered with the solder resist 14.

Next, as shown in FIG. 4, the semiconductor chip 5
An epoxy-based potting resin 8 is adhered to the main surface of and is baked and cured. Then, if necessary, a rubber stamp 15 (or laser beam) as shown in FIG. 5 is used to mark the product name or the like on the surface of the potting resin 8.

Next, as shown in FIG. 6, the TCP 4 is set in the lead cutting die 26. Then, the TCP lead 7 is fixed by the lead cutting die 27 and the lead cutting knockout 28, and unnecessary portions of the outer lead portion are cut and removed using the lead cutting punch 29.

Next, as shown in FIG. 7, the TCP 4 is set in the lead molding die 20. Then, the TCP lead 7 is fixed by the lead forming die 21 and the lead forming knockout 22, and the outer lead portion is formed into a gull wing shape by using the lead forming punch 23. After that, the TCP4 is stored in a product storage tray or the like by a carry-out mechanism (not shown).

Next, a method of manufacturing the lead frame with a frame will be described. To manufacture a lead frame with a frame,
First, a lead frame 30 as shown in FIG. 8 is prepared. The lead frame 30 is composed of a die pad portion 18 on which the TCP 4 is mounted, four suspension leads 31 supporting the die pad portion 18, a large number of leads 3 arranged around the die pad portion 18, an outer frame 32 and an inner frame 33. Has been done. A dam bar 34 is provided in the middle of the lead 3 to prevent resin leakage during molding, and a similar dam bar 35 is also provided at the tip of the inner lead part. Further, a hole 10a having a diameter of about 2 mm corresponding to the through hole 10 of the frame body 2 is provided in the middle of the suspension lead 31. These members are formed by pressing a hoop material made of metal such as 42 alloy. As shown in FIG. 9, the lead frame 30 has a structure in which a plurality of the above-described structures are connected in series.

Next, as shown in FIG. 10, the multiple lead frames 30 are set in a transfer mold die 40 and fixed by an upper die 40a and a lower die 40b. Subsequently, as shown in FIG. 11, the epoxy resin tablet 42 inserted in the pot 41 is heated and melted, and the plunger 43 pressurizes the molten resin into the cavity 45 through the gate 44. As shown in FIG. 12, a protrusion 46 for forming the through hole 10 in the frame body 2 is provided in the cavity 45 at a position corresponding to the hole 10 a. The protrusion 46 may have a length such that its tip slightly enters the hole 10a of the lead frame 30 (about one third of the plate thickness of the lead frame 30).

FIG. 13 is a plan view of the frame-equipped lead frame 30A obtained by molding the frame 2 by the above method. After that, a sand blast process for removing resin burrs remaining on the surface of the frame-equipped lead frame 30A is performed, and subsequently, a portion other than the frame 2 is plated with a solder containing tin (Sn). With lead frame 3
OA is completed.

Next, the lead frame 30A with the frame body
A method of mounting TCP4 on will be described.

First, as shown in FIG. 14, the lead frame 30A with a frame is set in the dam bar cutting die 50,
After fixing the frame-equipped lead frame 30A with the dam bar cutting die 51 and the dam bar cutting knockout 52, the dam bar 34 is punched using the dam bar cutting punch 53.
35 is cut and removed. The dam bar 34 and the dam bar 35 may be cut using different molds. Also,
If the resin does not flow to the tip of the inner lead portion when the frame body 2 is molded, it is not necessary to provide the dam bar 35. Further, instead of providing the dam bars 34 and 35, a rectangular frame-shaped insulating film may be attached to the leads 3 to prevent resin leakage. In this case, the step of cutting the dam bar is unnecessary.

Next, as shown in FIG. 15, the lead frame 30A with a frame is set on the stage 60, the conductive adhesive 17 is applied to the upper surface of the die pad portion 18, and then the step shown in FIG.
As shown in FIG. 6, the semiconductor chip 5 incorporated in the TCP 4 is accurately mounted on the upper surface of the die pad portion 18 by using a mounter having an automatic position detecting mechanism. Then, the conductive adhesive 17 is baked and cured to fix the semiconductor chip 5 to the upper surface of the die pad portion 18. At this time, as shown in the figure, by inserting the pin 61 standing on the stage 60 into the through hole 10 of the frame 2 and performing the above-mentioned work, it is possible to prevent the lead frame with frame 30A from being displaced. , TCP lead 7 and lead 3 can be superposed with high precision.

Next, as shown in FIG. 17, the heating tool 6
The outer lead portion of the TCP lead 7 is collectively thermocompression-bonded to the inner lead portion of the lead 3 using 2. As described above, the surface of the lead 3 is plated with solder containing Sn, and the surface of the TCP lead 7 is plated with Au. Therefore, the Au-Sn eutectic alloy layer is formed to form the lead 3 and the TCP. The lead 7 is joined.

Next, as shown in FIG. 18, the frame-equipped lead frame 30A on which the TCP 4 is mounted is set in the lead cutting die 70. Then, the lead cutting die 71
Then, the lead 3 is fixed by the knockout 72 for cutting the lead, and the unnecessary portion is used by using the punch 73 for cutting the lead (outer frame 3
2. Cut and remove the inner frame 33).

Next, as shown in FIG. 19, the lead frame 30A with the frame is set in the lead molding die 80. Then, the lead 3 is fixed with the lead forming die 81 and the lead forming knockout 82, and the outer lead portion is formed into a gull wing shape by using the lead forming punch 83, so that the present embodiment shown in FIGS. The example LSI package 1 is almost completed.

When it is desired to attach a large radiating fin to the LSI package 1, as shown in FIG. 20, the lead frame 30A with a frame is attached to the lead forming metal so that the TCP 4 is located below the die pad portion 18. Mold 80
And the lead 3 is molded. Further, prior to the step of mounting the TCP 4 on the frame-equipped lead frame 30A, unnecessary portions of the leads 3 are cut and removed, and the leads 3 are molded, and then the individual frame-equipped lead frames 30A are previously described. The TCP4 may be mounted by the above method.

Finally, by an unillustrated carry-out mechanism, LS
The I-package 1 is stored in a product storage tray or the like and conveyed to an inspection process, and an electric characteristic test such as a burn-in test is performed to select a non-defective product.

The LSI package 1 of the present embodiment has a frame 2
And the shape of the outer lead part of the lead 3 are QF
Since it is the same as P, the product storage tray for QFP can be used as it is. Further, as shown in FIG. 21, a guide pin 37 is erected on the product storage tray 36, and the guide pin 37 is set on the frame body 2.
If the LSI package 1 is inserted into the through hole 10, the LSI package 1 does not move during transportation, and thus the lead 3 can be reliably prevented from being deformed during transportation. Further, a guide pin is set up on the board for burn-in test, and this is used as a frame body 5.
If it is inserted into the through hole 10 of
Improves the handling accuracy when the is mounted on the socket of the burn-in test board.

FIG. 22 is a flow chart of the manufacturing process of the LSI package 1 of this embodiment described above.

FIG. 23 shows the LSI package 1 of this embodiment.
FIG. 9 is a cross-sectional view showing a state in which is mounted on a substrate 90. LSI
To mount the package 1 on the substrate 90, as in the case of QFP, the outer lead portions of the leads 3 are superposed on the electrodes (footprints) 94 of the substrate 90, and the solder plating formed on the surfaces of the leads 3 is placed in the reflow furnace. To melt. At this time, by utilizing the through holes 10 of the frame body 5, the leads 3 and the electrodes 94 can be superposed with high accuracy, and the leads 3 and the electrodes 94 can be vibrated when the substrate 90 is loaded into the reflow furnace. It is possible to prevent displacement.

Further, a radiation fin can be attached to the LSI package 1 of this embodiment as required. FIG. 24 shows an example in which aluminum radiating fins 91 are attached to the lower surface of the die pad portion 18. Radiating fin 9
1 can be securely and easily attached by inserting a fixing means such as a screw 92 into the through hole 10 of the frame body 2. At this time, the heat radiation fins 91 may be fixed to the back surface of the die pad portion 18 with an adhesive.

According to the above configuration, the heat generated in the semiconductor chip 5 is transferred to the heat radiation fin 91 through the metal die pad portion 18, so that the LSI package 1 having a small thermal resistance can be obtained. In addition, the fixing of the radiation fin 91,
The method is not limited to the screw 92 as long as the method can achieve the purpose.

FIG. 25 (perspective view) and FIG. 26 (cross-sectional view)
This is an example in which the semiconductor chip 5 is joined to the lower surface of the die pad portion 18 and the heat radiation fins 93 are attached to the upper surface. In this case, since the large heat dissipation fin 93 can be attached, the thermal resistance of the LSI package 1 can be further reduced.

The inventions made by the present inventors are as follows.
Although the present invention has been specifically described based on the embodiments, it is needless to say that the present invention is not limited to the embodiments and various modifications can be made without departing from the scope of the invention.

For example, as shown in FIG. 27, a high melting point solder paste 95 may be used to connect the lead 3 and the TCP lead 7 of the frame-equipped lead frame 30A. in this case,
First, the semiconductor chip 5 is fixed to the upper surface of the die pad portion 18 by using the conductive adhesive 17, and then the high melting point solder paste 95 is supplied to the surface of the TCP lead 7 and melted by using a laser beam or the like. Since the surface of the TCP lead 7 is plated with Au, the lead 3 and the TCP lead 7 are joined by forming the Au—Sn eutectic alloy layer. This method can reduce the thermal stress applied to the TCP lead 7 as compared with the method of the above embodiment in which the lead 3 and the TCP lead 7 are collectively thermocompression bonded by using the heating tool 62. The connection reliability of the TCP lead 7 is improved.

When mounting the LSI package 1 on the substrate 90, a low melting point eutectic solder may be used to connect the lead 3 and the electrode 94. According to this method, only the lead frame with frame 30A is mounted on the substrate 90, and then,
It is also possible to mount the TCP4 on the frame-equipped lead frame 30A.

The through hole 10 provided in the frame body 2 is used for the lead frame 30A with the frame body in addition to the uses described in the above-described embodiments, for example, the dam bar cutting die 50 and the lead forming die 80.
It can be used for various purposes, such as alignment for setting in. Further, as shown in FIG. 28, by providing the same kind as the through hole 10 in the package body of the QFP 38, the handling in the QFP manufacturing process and the board mounting process becomes easy. In order to manufacture the QFP in which the through hole 10 is provided in the package body, the transfer mold die as described in the above embodiment and the lead frame having the hole formed in the middle of the suspension lead may be used.

The shapes of the frame body 2 and the leads 3 (outer lead portions) of the LSI package 1 of the present invention need not be the same as QFP, and various shapes can be adopted.

[0056]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1) According to the present invention, the wire bonding process can be omitted by collectively connecting the leads of the tape carrier package encapsulating the semiconductor chip and the leads of the frame-equipped lead frame, so that the LSI package is produced. It is possible to significantly improve the sex. Also, Q
Since the leads are connected to the semiconductor chip by using the TCP, which is easier to narrow the lead pitch than the FP, it is possible to promote the increase in the number of pins of the LSI package.

(2) According to the present invention, the heat radiation property of the LSI package can be improved by directly contacting the heat radiation fin with the back surface of the die pad portion on which the semiconductor chip is mounted. At that time, by utilizing the through hole provided in the frame body, the radiation fin can be securely and easily attached to the LSI package.

(3) According to the present invention, by providing the frame body with the through holes, the handling in the manufacturing process of the LSI package, the electrical characteristic inspection process and the substrate mounting process becomes easy.

(4) According to the present invention, the shape of the lead is Q
By making it the same as FP, soldering (solder reflow) to the substrate can be performed in the same process as other surface mount components such as SOJ (Small Outline J-lead package) and PLCC (Plastic Leaded Chip Carrier). it can. Further, since the shape of the lead is the same as that of the QFP, the flatness of the lead can be easily obtained, so that the mounting on the substrate can be performed accurately.

(5) According to the present invention, since the inside of the frame is made hollow, the potential for inclusion of voids during molding of the frame is reduced. Further, since the frame body and the TCP mounted inside thereof are separated from each other, the frame body and the TCP
There is no stress between and. Therefore, according to the present invention, package cracks do not occur even if the outer dimensions of the frame are increased.

Further, when the entire TCP is resin-sealed, the contraction force of the resin works due to the temperature at the time of mounting on the substrate, and the potential of disconnection of the connection between the lead and the TCP lead becomes high, but the frame and the TCP are separated. By being separated,
The potential for wire breakage due to thermal contraction of the resin is extremely low.

Moreover, when the semiconductor chip and the entire inner lead portion of the lead are resin-sealed like QFP, an expensive resin must be used for the purpose of improving protection and reliability of the semiconductor chip. L of the present invention
Since the frame of the SI package is thermoplastic and easy to mold, and an inexpensive resin having a heat resistant temperature of about 150 ° C. may be used, the cost of the package can be reduced.

(6) According to the present invention, since the TCP is mounted in the hollow region inside the frame, the chip repair after mounting on the substrate becomes easy.

[Brief description of drawings]

FIG. 1 is a perspective view of an LSI package that is an embodiment of the present invention.

FIG. 2 is a cross-sectional view of a semiconductor integrated circuit device that is an embodiment of the present invention.

FIG. 3 is an explanatory diagram showing a method of manufacturing a tape carrier package.

FIG. 4 is an explanatory diagram showing a method of manufacturing a tape carrier package.

FIG. 5 is an explanatory diagram showing a method of manufacturing a tape carrier package.

FIG. 6 is an explanatory diagram showing a method of manufacturing a tape carrier package.

FIG. 7 is an explanatory diagram showing a method of manufacturing a tape carrier package.

FIG. 8 is a plan view of a lead frame used in the present invention.

FIG. 9 is an overall plan view of a lead frame used in the present invention.

FIG. 10 is an explanatory diagram showing a method of manufacturing a lead frame with a frame body.

FIG. 11 is an explanatory diagram showing a method of manufacturing a lead frame with a frame body.

FIG. 12 is an explanatory diagram showing a method of manufacturing a lead frame with a frame.

FIG. 13 is a plan view of a lead frame with a frame body.

FIG. 14 is an explanatory diagram showing a method of manufacturing a lead frame with a frame body.

FIG. 15 is an explanatory diagram showing a method of mounting a tape carrier package on a lead frame with a frame.

FIG. 16 is an explanatory diagram showing a method of mounting a tape carrier package on a lead frame with a frame.

FIG. 17 is an explanatory diagram showing a method of mounting a tape carrier package on a lead frame with a frame.

FIG. 18 is an explanatory diagram showing a method of mounting a tape carrier package on a lead frame with a frame.

FIG. 19 is an explanatory diagram showing a method of mounting a tape carrier package on a lead frame with a frame.

FIG. 20 is an explanatory diagram showing a method of mounting a tape carrier package on a lead frame with a frame.

FIG. 21 is an explanatory diagram showing a state where the LSI package of the present invention is stored in a product storage tray.

FIG. 22 is a flowchart showing the manufacturing process of the LSI package of the present invention.

FIG. 23 is a cross-sectional view showing a state in which the LSI package of the present invention is mounted on a substrate.

FIG. 24 is a cross-sectional view showing a state in which a radiation fin is attached to the LSI package of the present invention.

FIG. 25 is an external perspective view showing a state in which a radiation fin is attached to the LSI package of the present invention.

FIG. 26 is a cross-sectional view showing a state in which a radiation fin is attached to the LSI package of the present invention.

FIG. 27 is an explanatory view showing another method of mounting the tape carrier package on the lead frame with a frame.

FIG. 28 is an external perspective view showing a state in which a through hole is provided in the package body of the QFP.

[Explanation of symbols]

 1 LSI Package 2 Frame 3 Lead 4 Tape Carrier Package (TCP) 5 Semiconductor Chip 6 Insulating Film 7 TCP Lead 8 Potting Resin 9 Bump Electrode 10 Through Hole 10a Hole 11 Stage 12 Heating Tool 13 Au Plating 14 Solder Resist 15 Rubber Stamp 17 Conductive Adhesive 18 Die pad part 20 Lead forming die 21 Lead forming die 22 Lead forming knockout 23 Lead forming punch 26 Lead cutting die 27 Lead cutting die 28 Lead cutting knockout 29 Lead cutting punch 30 Lead frame 30A Lead frame with frame 31 Suspended leads 32 Outer frame 33 Inner frame 34 Dam bar 35 Dam bar 36 Product storage tray 37 Guide pin 38 QFP 40 Transfer mold die 40a Top metal 40b Lower mold 41 Pot 42 Tablet 43 Plunger 44 Gate 45 Cavity 46 Protrusion 50 Dambar cutting mold 51 Dambar cutting die 52 Dambar cutting knockout 53 Dambar cutting punch 60 Stage 61 pin 62 Heating tool 70 Lead cutting mold 71 Lead Cutting die 72 Lead cutting knockout 73 Lead cutting punch 80 Lead molding die 81 Lead molding die 82 Lead molding knockout 83 Lead molding punch 90 Substrate 91 Radiating fin 92 Screw 93 Radiating fin 94 Electrode (footprint) 95 High melting point solder paste

Claims (9)

[Claims] 1. A die pad portion on which a semiconductor chip is mounted, a resin frame body provided around the die pad portion and having a hollow central portion, and an inner side and an outer side penetrating the frame body. A semiconductor chip incorporated in a tape carrier package is mounted on the die pad portion of a lead frame composed of a plurality of leads extending in the frame, and the leads extending inside the frame and the tape carrier package. A semiconductor integrated circuit device characterized in that it is electrically connected to the lead of the semiconductor integrated circuit device. 2. The semiconductor integrated circuit device according to claim 1, wherein the lead extending to the outside of the frame is formed into a shape capable of being surface-mounted, and the surface thereof is solder-plated. Semiconductor integrated circuit device. 3. The semiconductor integrated circuit device according to claim 1, wherein a through hole is provided in a part of the frame along an upper surface and a back surface thereof. 4. The semiconductor integrated circuit device according to claim 1, wherein a radiation fin is attached to an upper surface or a back surface of the frame body, and a part of the radiation fin is brought into contact with a back surface of the die pad portion. Semiconductor integrated circuit device. 5. The semiconductor integrated circuit device according to claim 4, wherein a through hole is provided in a part of the frame body from an upper surface to a back surface thereof, and the heat radiation is performed via a fixing means inserted in the through hole. A semiconductor integrated circuit device, wherein a fin is fixed to the frame body. 6. The method of manufacturing a semiconductor integrated circuit device according to claim 3, wherein the through hole is used for positioning the lead frame in a step of manufacturing the semiconductor integrated circuit device. Device manufacturing method. 7. The method of manufacturing a semiconductor integrated circuit device according to claim 3, wherein the through hole is used for positioning the semiconductor integrated circuit device in a step of mounting the semiconductor integrated circuit device on a substrate. Method for manufacturing semiconductor integrated circuit device. 8. A die pad portion on which a semiconductor chip is mounted, a resin frame body provided around the die pad portion and having a hollow central portion, and inside and outside of the frame body penetrating the frame body. A step of preparing a lead frame composed of a plurality of leads extending in the above step, and mounting a semiconductor chip incorporated in a tape carrier package on the die pad portion of the lead frame and extending the inside of the frame body. A method of manufacturing a semiconductor integrated circuit device, comprising the step of collectively connecting the existing lead and the lead of the tape carrier package. 9. A die pad portion on which a semiconductor chip is mounted, a resin frame body provided around the die pad portion and having a hollow central portion, and inside and outside of the frame body penetrating the frame body. And a plurality of leads extending to the lead frame.