JPH06236956A - Semiconductor device and its manufacture - Google Patents

Abstract

PURPOSE:To permit the lead frame of a semiconductor device to maintain high reliability and strength without damages, deformation and interference to other components and facilitate the handling of the lead frame. CONSTITUTION:A semiconductor chip 2 is bonded to a die pad 3 and the leading edge of a lead frame 4 extended to the terminal of the semiconductor chip 2 is directly connected to the terminal through a gold bump 7. A protruding part 4a is formed in a resin mold part on the way to the terminal of the lead frame 4 and the lead frame 4 at the external side of the protruding part 4a and frame material are cut leaving the bent part at the external side of the protruding part 4a. Thus, the exposing part 4b and the bent part 4c are formed. The semiconductor device 1 is mounted on a board using the exposed part 4b as a connecting terminal by a COB system.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly, to a semiconductor device in which outer leads do not project to the outside and is mounted on a substrate by a method called COB (Chip On Board), and a method thereof. It relates to the manufacturing method.

[0002]

2. Description of the Related Art A conventional plastic flat package for a semiconductor device is disclosed in, for example, JP-A-60-88447 and JP-A-1-128893.
A semiconductor chip is sealed on a metal lead frame by resin molding.

Among these, in the technique disclosed in Japanese Patent Laid-Open No. 60-88447, the terminals of the semiconductor chip mounted on the die pad and the inner leads of the lead frame are wire-bonded by wires such as gold wires. The outer portion of the outer lead of the lead frame is exposed on the surface of the mold, and the exposed outer lead is used as a terminal for mounting on the substrate. As a result, the outer leads are prevented from being deformed or damaged, and the reliability as a terminal is improved.

Further, in the technique disclosed in Japanese Patent Laid-Open No. 1-128893, the terminals of the mounted semiconductor chip and the inner leads of the lead frame are connected by bumps such as solder, and the inner leads are connected to the terminals of the semiconductor chip. The connecting portion, that is, the tip portion of the inner lead is exposed on the surface of the mold. Also, a part of the surface of the semiconductor chip on the side to which the inner leads are connected is exposed without being molded. Further, the outer portion of the outer lead of the lead frame is exposed on the surface opposite to the surface of the mold where the inner lead is exposed, and the exposed outer lead is used as a terminal for mounting on the substrate. The outer leads of this semiconductor device are also the above-mentioned JP-A-60-88447.
Since the outer lead has a shape similar to that described in the publication, deformation or damage of the outer lead is reduced, and reliability as a terminal is improved.

On the other hand, as a method for directly mounting a semiconductor chip on a substrate, there is a method called COB (Chip On Board) method. This is a method in which a semiconductor chip is mounted on a substrate as it is and its terminals are connected to a circuit pattern on the substrate. Naturally, a lead frame is not attached to the semiconductor chip, and therefore outer leads do not exist, The terminal of is used for connection.

[0006]

As described above, according to the techniques disclosed in JP-A-60-88447 and JP-A-1-128893, the outer lead may be deformed or damaged. Although it is reduced and the reliability as a terminal is improved to some extent, it cannot be said that the outer lead is still protruding from the resin mold, so the deformation and damage of the outer lead cannot be sufficiently prevented. The protruding outer leads may be caught on the semiconductor device or other electronic parts and easily interfere with each other, possibly damaging other parts.

In the COB method, since the outer lead does not exist, the above problem does not occur, but there is another problem as follows. That is, the semiconductor chip used in the conventional COB method is called a flip chip, and its size is small in many cases, so that it is not easy to handle, and high positioning accuracy is required when it is mounted on a substrate. In addition, since the circuit pattern on the board is required to be extremely fine in response to the recent miniaturization and high performance of electronic devices, it is not easy to manufacture the board when the COB method is adopted. The terminal connection is technically difficult because it requires a special connection device. Further, since the semiconductor chip is handled in a bare state, it requires more complicated pretreatment than an ordinary IC chip, and the content of the pretreatment is also limited. Furthermore, the semiconductor chip itself has a weak strength against impact, and it is not affected by the surrounding environment. On the other hand, it is very delicate and easily affected by it.

An object of the present invention is to provide a semiconductor device which can maintain high reliability and high strength without being damaged or deformed by the lead frame or which interferes with other parts and which is easy to handle, and a manufacturing method thereof. To do.

[0009]

In order to achieve the above object, according to the present invention, terminals of a semiconductor chip are electrically connected to a lead frame, and the semiconductor chip and the lead frame are integrally sealed by a molding part. In the stopped semiconductor device, an exposed portion exposed on the surface of the mold portion is formed in a portion of the lead frame that reaches the terminal, and an end portion of the lead frame outside in the longitudinal direction is bent inside the mold portion. A semiconductor device is provided.

In the above semiconductor device, preferably, the lead frame has its longitudinally inner end extending to the terminal portion of the semiconductor chip and connected to the terminal.

In the above semiconductor device, preferably, the exposed portions of the lead frames are formed so as to be displaced in the longitudinal direction between the adjacent lead frames.

In the above semiconductor device, preferably, another exposed portion exposed on the surface of the mold portion opposite to the exposed portion is further formed in the middle of the lead frame.

Further, in order to achieve the above object, according to the present invention, a semiconductor device in which terminals of a semiconductor chip are electrically connected to a lead frame, and the semiconductor chip and the lead frame are integrally sealed by a mold portion. In the manufacturing method, a lead frame is formed from a single metal plate, and a convex portion is formed in the middle of the lead frame so as to be exposed at the surface of the mold portion, and the end portion inward in the longitudinal direction of the lead frame is formed. The semiconductor chip is arranged so that the semiconductor chip terminals are opposed to each other, the end of the lead frame in the longitudinal direction is connected to the terminal of the semiconductor chip, and then,
It is possible to cut off the lead frame outside the convex portion, which is located outside the lead frame longitudinal direction, and then to integrally seal the semiconductor chip and the lead frame with a mold. A method of manufacturing a featured semiconductor device is provided.

In the method of manufacturing a semiconductor device described above,
Preferably, immediately after forming the convex portion in the middle of the lead frame, a reinforcing tape is attached to the exposed surface of the convex portion or the surface opposite to the exposed surface of the convex portion.

[0015]

In the present invention having the above-described structure, the exposed portion formed in the middle of the lead frame is firmly and accurately fixed by the mold portion. The method can be mounted on the substrate by the method (3), the dimensional accuracy is good, and the positioning at the time of mounting is easy, and the reliability is improved. Also, due to the fine pitch, the lead frame has a radial shape in which the pitch is narrower toward the inside and wider toward the outside, but by forming the exposed part in the middle of the lead frame, the adjacent exposed part, that is, the connection. The distance between the terminals is wider than the distance between the terminals of the semiconductor chip, and it is not necessary to make the circuit pattern on the substrate fine, which facilitates the manufacture of the substrate. In addition, terminals can be easily connected when mounting a semiconductor device on a substrate, and in addition to the conventional wire bonding method, a method using solder bumps or a method using reflow soldering similar to the conventional QFP (Quad Flat Package) is possible. Become.

Further, by bending the end portion of the lead frame outside in the longitudinal direction, that is, the end portion opposite to the side connected to the terminal of the semiconductor chip into the mold portion, the end portion of the lead frame is molded. Since the lead frame is embedded inside the part, the lead frame is not deformed or damaged, and further, the lead frame does not interfere with other parts or be damaged.

Further, when the semiconductor device of the present invention in which the semiconductor chip and the lead frame are integrally sealed in the above-mentioned state by the mold portion is mounted by the COB method, it is more sufficient than the conventional bare semiconductor chip. It has a large size, is easy to handle, and improves positioning accuracy. Further, since the semiconductor chip is protected by the mold part, it is possible to perform the same pretreatment as that for a normal IC chip without requiring a troublesome pretreatment, and also the strength against impact is improved, It is not easily affected by the environment.

By the way, as a processing method aiming at a fine pitch of the lead frame in order to cope with the recent miniaturization and high performance of electronic equipment, the applicant of the present application has proposed that the tip of the inner lead of a fine pitch which cannot be processed by etching. A processing method in which only a portion is cut by a YAG laser and the rest is processed by etching and pressing in advance or afterward has been previously proposed and applied (Japanese Patent Application No. 4-313615:
(Applied on November 24, 1992). By this processing method, the tip of the inner lead can be cut to a pitch of about 0.07 mm using a material having a plate thickness of 0.15 mm. In the present invention, the lead frame and the semiconductor are formed by extending the inner end in the longitudinal direction of the lead frame processed into a fine pitch by the above-described fine processing technique to the vicinity of the terminal of the semiconductor chip and directly joining the tip to the terminal. Electrically connect the chips. As a result, the lead frame and the semiconductor chip can be connected at once using the gold bumps, which shortens the processing time.

Further, in the present invention, the exposed portions of the lead frames are formed so as to be shifted in the longitudinal direction between the adjacent lead frames, so that the distance between the exposed portions is further widened, and the substrate and the terminal connection can be manufactured. It gets even easier.

Further, by forming another exposed portion exposed on the surface of the mold portion on the opposite side to the exposed portion, the other exposed portion is mounted on a test terminal for circuit inspection or a board. It can be used as a connection terminal for later addition of electric components or circuit modification.

Instead of extending one end of the lead frame to the vicinity of the terminals of the semiconductor chip and directly joining them, the lead frame and the terminals of the semiconductor chip may be connected by a conventional wire bonding method.

The above semiconductor device can be manufactured by the manufacturing method of the present invention. In the manufacturing method of the present invention,
A protrusion is formed in the middle of the lead frame so as to be exposed on the surface of the mold part, and after connecting the lead frame and the terminals of the semiconductor chip, leaving a bent portion of the protrusion located outside in the lead frame longitudinal direction. By cutting off the lead frame outside thereof, the above-described exposed portion and the bent portion are formed inside the mold portion.

Further, after forming the convex portion in the middle of the lead frame, a reinforcing tape is attached to the exposed surface of the convex portion or the surface opposite to the exposed surface, whereby the convex portion is formed after connecting the terminals of the lead frame and the semiconductor chip. Even if the lead frame outside the part is cut and separated, the positions of these parts are prevented from being displaced or separated.

[0024]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device according to an embodiment of the present invention will be described below with reference to FIGS. In this embodiment, COB (Chip
This is an example in which the present invention is applied to a semiconductor device mounted on a substrate by a method called On Board).

1 and 2, the semiconductor device 1 of this embodiment is electrically connected to a semiconductor chip 2, a die pad 3 located above the semiconductor chip 2 and mounted thereon, and terminals of the semiconductor chip 2. The lead frame 4 and the resin mold portion 5 in which the semiconductor chip 2, the die pad 3, and the lead frame 4 are integrally sealed. The inner end of the lead frame 4 in the longitudinal direction extends to the terminal portion of the semiconductor chip 2 and is electrically connected to the terminal by the gold bump 7, and the terminal of the lead frame 4 is inside the resin mold portion 5. The convex portion 4a is formed on the way to. The convex portion 4a is formed so as to be exposed on the surface of the resin mold portion 5, and the exposed portion 4b is formed.
Is plated with solder (not shown) for easy connection when used as a connection terminal. Further, a bent portion 4c is formed at an end portion of the lead frame 4 on the outer side in the longitudinal direction, that is, an end portion which is not connected to the terminal of the semiconductor chip 2, and the bent portion 4c is formed by the resin mold portion 5.
Is bent inside. That is, the outer end of the lead frame 4 ends in a state of being embedded in the resin mold portion 5, and there is no outer lead protruding from the resin mold portion 5 as in the conventional QFP. Further, the inner portion of the lead frame 4 is radially arranged as shown in FIG. 2, and the width of the portion is gradually narrowed toward the semiconductor chip 2. Further, the semiconductor chip 2 is bonded to the die pad 3 with a thermosetting adhesive 6 with the circuit forming surface facing the die pad 3.

In the semiconductor device 1 configured as described above, the convex portion 4a is formed inside the resin mold portion 5 on the way to the chip terminal of the lead frame 4.
The convex portion 4a is firmly and accurately fixed by the resin mold portion, and the exposed portion 4b of the convex portion 4a is used as a connection terminal for C
It can be mounted on the board by the same method as the OB method.
Moreover, dimensional accuracy is good and positioning during mounting is easy,
Improves reliability. Further, the pitch of the lead frame 4 becomes narrower as it gets closer to the semiconductor chip 2 as shown in FIG. 2, but since the convex portion 4a is formed in the middle of the lead frame 4b, the interval between the exposed portions 4b adjacent to each other, that is, the connection terminals. Is wider than the distance between the terminals of the semiconductor chip 2. Therefore, it is not necessary to make the circuit pattern on the substrate fine, the substrate can be easily manufactured, and the terminal connection is facilitated when the semiconductor device is mounted on the substrate. In addition to the conventional wire bonding method, solder bumps are used. Method and conventional QFP
The method by reflow soldering similar to (Quad Flat Package) is possible. Further, compared to a TAB (Tap Automated Bonding) type semiconductor device in which leads of a Cu foil formed on a polyimide film and terminals of a semiconductor chip are directly joined, handling at the time of mounting is extremely easy.

A bent portion 4c at the outer end of the lead frame 4 is bent inside the resin mold portion 5. As a result, the outer end portion of the lead frame 4 ends in a state of being embedded inside the resin mold portion 5, and the lead frame is caught or deformed or damaged by other external parts or the like. In addition, the lead frame does not interfere with other parts to damage them. Further, the end portion of the lead frame 4 in the longitudinal direction may be terminated on the surface of the resin mold portion 5 without being bent inside the resin mold portion 5. In this case, the end portion is Since it is firmly fixed by the resin mold portion 5, the same effect as above can be obtained.

Further, in the semiconductor device 1 of the present embodiment, the semiconductor chip 2 and the lead frame 4 are integrally sealed by the resin mold portion 5 in the state as shown in FIG. And the size is large enough for CO
When the B method is used, the handling is easy and the positioning accuracy is improved. On the contrary, the size of the semiconductor chip 2 itself can be further reduced, and higher density and higher integration can be dealt with. Further, since the semiconductor chip 2 is protected by the resin mold portion 5, it is possible to perform the same pretreatment as that of a normal IC chip without requiring a troublesome pretreatment. Further, the semiconductor chip 2 is usually made of Si or the like, which is brittle and easily chipped.
Since the semiconductor chip 2 itself is not exposed, it is less susceptible to heat, humidity, and other surrounding environments.

Next, one embodiment of a method of manufacturing the above-mentioned semiconductor device 1 will be described with reference to FIGS. First, in step 100, a metal plate such as steel, copper alloy, 42 alloy, or Kovar is placed on a leveler and processed into a predetermined thickness. Next, in step 101, the metal plate is processed, and as shown in FIG. 4, the die pad 3 and the lead frame 4 and the dam bar 1 for supporting these during manufacturing.
0 and the peripheral frame member 11 having the guide hole 12 are formed. At this time, the lead frame 4 of the lead frame 4
Is formed to have a length such that the tip thereof extends to the terminal portion of the semiconductor chip 2 even when the convex portion is formed later. Further, the pitch of the tip portion of the lead frame 4 is about 0.07 mm when the plate thickness of the metal plate is 0.15 mm. By making the tip portion of the lead frame 4 have such a length and a fine pitch, it becomes possible to directly connect the lead frame 4 to the terminals of a highly integrated semiconductor chip having a fine pitch. The processing of the lead frame 4 having such a fine pitch can be realized by the processing method of the above-mentioned prior invention. Next, solder plating is applied to the entire surface of the metal plate processed as described above.

Next, at step 102, a convex portion 4a is formed in the middle of the lead frame 4 using a die press or the like. The height of the convex portion 4a is set so that it can be exposed on the surface of the resin mold portion 5 after molding. Then, in step 103, the exposed surface of the convex portion 4a,
That is, the reinforcing tape 8 is attached to the surface of the exposed portion 4b (see FIG. 4).
reference). By doing so, even if the lead frame 4 and the frame member 11 outside the convex portion 4a are cut off and the lead frames are individually separated (see the process of step 107 described later), these positions may be displaced. It is prevented from falling apart. The reinforcing tape 8 may be attached to the surface opposite to the exposed surface of the convex portion 4a, that is, the back surface of the exposed portion 4b. The state in which the reinforcing tape 8 is attached is shown in FIG.
Shown in.

In step 101, the inner end portion of the lead frame 4, that is, the end portion on the side connected to the terminal of the semiconductor chip 2 is formed in a connected state.
After attaching the reinforcing tape 8 with 03, the lead frame 4
The inner ends of the may be separated individually. As a result, displacement of the lead frame 4 is prevented by the reinforcing tape 8 after the inner ends of the individual lead frames 4 are connected to each other and after the reinforcing tape 8 is attached. It

Next, in step 104, a thermosetting adhesive is applied to the circuit forming surface of the semiconductor chip 2 and gold bumps are arranged on the terminals of the semiconductor chip 2. In addition, before applying the thermosetting adhesive, the semiconductor chip 2
It is preferable to previously form an electrically insulating protective film on the circuit formation surface.

Next, in step 105, the semiconductor chip 2 is placed on the die pad 3 of the metal plate formed as described above.
Equipped with. At this time, the semiconductor chip 2 is arranged so that the circuit forming surface coated with the adhesive faces the die pad 3, and the tip of the lead frame 4 is aligned with the gold bump arranged on the terminal of the semiconductor chip 2.

Next, in step 106, heat and pressure are applied by pressing a trowel heated to a high temperature from above the die pad 3 to cure the thermosetting adhesive to bond the semiconductor chip and the die pad 3. Also, the lead frame 4
Similarly, a trowel that has been heated to a high temperature is pressed against the tip portion of the to apply heat and pressure, and the tip of the lead frame 4 and the terminal of the semiconductor chip 2 are electrically connected via a gold bump. In this case, by pressing the two trowels together, the joining of the semiconductor chip 2 and the die pad 3 and the connection of the tip of the lead frame and the chip terminal are performed at the same time. The state where this connection is completed is shown in FIG.

Next, at step 107, the lead frame 4 and the frame member 11 outside the protruding portion 4a are cut off, leaving a bent portion located outwardly of the protruding portion 4a as viewed in the longitudinal direction of the lead frame. As a result, the exposed portion 4b and the bent portion 4c are formed. In addition, the lead frame 4 has a bent portion 4
The lead frame 4 may be terminated in the middle of the exposed portion 4b without forming c.

Next, at step 108, the semiconductor chip 2, the die pad 3 and the lead frame 4 are integrally sealed by resin molding to form a resin molded portion 5.
At this stage, the reinforcing tape 8 is formed on the surface of the exposed portion 4b of the convex portion 4a formed in the lead frame 4 in step 102.
Is still attached, the surface of the resin mold portion 5 is ground to completely expose the clean surface of the exposed portion 4b. Further, when this exposed portion 4b is used as a connection terminal, this portion is solder-plated so as to facilitate connection. Although not shown, the exposed portion 4b is protected by further covering the exposed portion 4b with an electric insulating material.

Next, in step 109, the connection state between the semiconductor chip 2 and the lead frame 4 is inspected, in step 110, the manufacturing number, product number, etc. are marked, and finally in step 111, the product is inspected and packaged. And ship.

According to the method of manufacturing the semiconductor device 1 described above,
A protrusion 4a is formed on the surface of the resin mold portion 5 in the middle of the lead frame 4, and after the connection with the semiconductor chip 2, the protrusion 4a is formed.
Since the lead frame 4 and the frame member 11 located outside the bent portion are cut off while leaving the bent portion located outside, the exposed portion 4b and the bent portion 4c can be formed. Also,
Even if the lead frame 4 is terminated in the middle of the surface of the resin mold portion 5, that is, the exposed portion 4b without forming the bent portion 4c on the lead frame 4, the same effect can be obtained for the reason described above.

Further, a protrusion 4a is provided in the middle of the lead frame 4.
After forming the ridges, the reinforcing tape 8 is attached to the exposed surface of the convex portion 4a or the opposite surface thereof, and the lead frame 4 and the frame member 11 outside the convex portion 4a are cut off to separate the lead frames individually. Also, these positions are prevented from being displaced or separated.

In the method of manufacturing the semiconductor device 1 described above, the lead frame 4 and the chip terminal are directly connected via the gold bump. Therefore, since the lead frame 4 and the semiconductor chip 2 can be connected together, the processing time is shortened, the manufacturing process of the semiconductor device is greatly simplified, and the mass productivity is improved. Further, the positioning accuracy of the semiconductor chip 2 can be improved, and the reliability of the semiconductor device can be significantly improved.

It should be noted that instead of extending one end of the lead frame 4 to the vicinity of the terminals of the semiconductor chip 2 and directly joining them as described above, the lead frame 4 and the terminals of the semiconductor chip 2 are connected by a conventional wire bonding method. You may.

Another embodiment of the present invention will be described with reference to FIG. In this embodiment, the lead frames 4 adjacent to each other are used.
The convex portions 4d and 4e are formed so as to be displaced in the longitudinal direction of the lead frame, and the exposed portions 4f and 4g and the bent portions 4F and 4G are formed, respectively. The other structure is the same as that of the embodiment of FIG. According to the present embodiment configured as described above, the distance between the exposed portions 4F and 4G of the protrusions 4d and 4e can be made wider than the distance between the terminals of the semiconductor chip 2 as a matter of course. It can be made wider than when it is formed without using it, and the manufacture of the substrate and the terminal connection become easier. Although the die pad is not provided in this embodiment, it may be provided, of course.

Still another embodiment of the present invention will be described with reference to FIG. In this embodiment, in addition to the exposed portion 4h exposed on one surface of the resin mold portion 5, an exposed portion 4i is further formed on the surface opposite to the exposed surface of the exposed portion 4h. Then, as in FIG. 1, the lead frame portion is cut off except for the bent portion 4j at the end of the exposed portion 4i, and the bent portion 4j is bent inside the resin mold portion 5. That is, as in the case of FIG. 1, the end portion of the lead frame 4 is terminated while being embedded in the resin mold portion 5. Also, the exposed portions 4h and 4i and the bent portion 4
As an example of a method of forming j, a method of forming a convex portion to be the exposed portion 4h on the lead frame 4, then cutting off the outer portion of the lead frame 4, and then forming a convex portion to be the exposed portion 4i is an example. Can be given as.

According to the present embodiment thus constructed, C
It can be mounted on the board by adopting the OB method, and the exposed portion 4h or 4i is used as an inspection terminal for circuit inspection or a connection terminal for adding an electric component or mounting a circuit after mounting on the board. be able to.

[0045]

According to the semiconductor device of the present invention, it is possible to maintain high reliability and high strength without causing damage or deformation of the lead frame or interfering with other parts, and facilitate handling. be able to.

Further, it can be mounted on the substrate by a method similar to the COB method, and moreover, the dimensional accuracy is good, the positioning at the time of mounting is easy, and the reliability is improved. In addition, it becomes easy to manufacture a board on which the board is mounted, and various connection methods can be used for mounting on the board. Furthermore, since it can be protected by the mold part without using a conventional bare semiconductor chip, the same pretreatment as that of an ordinary IC chip can be performed, the strength against impact is improved, and the surrounding environment is not easily affected. .

Further, according to the manufacturing method of the present invention, the pitch of the lead frame can be made finer, the accuracy and reliability of the semiconductor device can be improved, and the manufacturing process of the semiconductor device can be simplified.

[Brief description of drawings]

FIG. 1 is a sectional view of a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a plan view showing the semiconductor device shown in FIG. 1 with a resin mold portion removed.

FIG. 3 is a diagram showing a manufacturing process of a method for manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 4 is a plan view of the metal plate after the reinforcing tape is attached to the lead frame in the manufacturing process shown in FIG.

5 is a plan view showing a state in which semiconductor chips are bonded and connected to a die pad and a lead frame in the manufacturing process shown in FIG.

FIG. 6 is a sectional view of a semiconductor device according to another embodiment of the present invention.

FIG. 7 is a sectional view of a semiconductor device according to still another embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Semiconductor chip 3 Die pad 4 Lead frame 4a Convex part 4b Exposed part 4c Bent part 4d, 4e Convex part 4f, 4g Exposed part 4F, 4G Bent part 4h, 4i Exposed part 4j Bent part 5 Resin mold part 6 Adhesive 7 Gold bump 8 Reinforcing tape

Continuation of front page (51) Int.Cl. ⁵ Identification number Office reference number FI Technical indication location H01L 23/28 J 8617-4M (72) Inventor Shigeyuki Sakurai 650 Kandachi-cho, Tsuchiura-shi, Ibaraki Hitachi Construction Machinery Stock Ceremony Inside the Tsuchiura Plant of the company (72) Inventor Yoshiya Nagano 650 Kazunachi-cho, Tsuchiura City, Ibaraki Prefecture Hitachi Construction Machinery Co., Ltd.

Claims (7)

[Claims] 1. A semiconductor device in which a terminal of a semiconductor chip is electrically connected to a lead frame, and the semiconductor chip and the lead frame are integrally sealed by a mold part. A semiconductor device, wherein an exposed portion that is exposed on the surface of the mold portion is formed, and an end portion of the lead frame outside in the longitudinal direction is bent inside the mold portion. 2. The semiconductor device according to claim 1, wherein the lead frame has an inner end in the longitudinal direction extending to a terminal portion of the semiconductor chip and connected to the terminal. . 3. The semiconductor device according to claim 1, wherein the exposed portion of the lead frame is formed by being shifted in the longitudinal direction between the adjacent lead frames. 4. The semiconductor device according to claim 1, wherein another exposed portion exposed on a surface of the mold portion opposite to the exposed portion is further formed in an intermediate portion of the lead frame. Semiconductor device. 5. A method of manufacturing a semiconductor device in which terminals of a semiconductor chip are electrically connected to a lead frame, and the semiconductor chip and the lead frame are integrally sealed by a molding part, wherein a lead frame is formed from a single metal plate. Forming a convex part in the middle of the lead frame so as to be exposed on the surface of the mold part, and arranging the semiconductor chip at the inner end of the lead frame in the longitudinal direction so that the semiconductor chip terminals face each other. The end of the lead frame inward in the longitudinal direction and the terminal of the semiconductor chip are connected to each other, and thereafter, the bent portion located outside the lead frame in the longitudinal direction of the convex portion is left outside. The lead frame of
Next, a method of manufacturing a semiconductor device, characterized in that the semiconductor chip and the lead frame are integrally sealed with a mold. 6. The method of manufacturing a semiconductor device according to claim 5, wherein a reinforcing tape is attached to the exposed surface of the convex portion immediately after the convex portion is formed in the middle of the lead frame. Manufacturing method of semiconductor device. 7. The method of manufacturing a semiconductor device according to claim 5, wherein a reinforcing tape is attached to a surface of the lead frame opposite to an exposed surface immediately after forming the projection in the middle of the lead frame. A method for manufacturing a semiconductor device, comprising: