CN102088016B - Semiconductor voltage-stabilizing and rectifying integrated device - Google Patents
Semiconductor voltage-stabilizing and rectifying integrated device Download PDFInfo
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- CN102088016B CN102088016B CN2009101029222A CN200910102922A CN102088016B CN 102088016 B CN102088016 B CN 102088016B CN 2009101029222 A CN2009101029222 A CN 2009101029222A CN 200910102922 A CN200910102922 A CN 200910102922A CN 102088016 B CN102088016 B CN 102088016B
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- tube core
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- stabilizing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Rectifiers (AREA)
Abstract
The invention discloses a semiconductor voltage-stabilizing and rectifying integrated device. In the invention, a cathode of the core of a voltage-stabilizing diode and an anode of the core of a rectifying diode are tightly jointed together; aluminum sheet layers are adhered to the anode end of the core of the voltage-stabilizing diode and the cathode end of the core of the rectifying diode; a molybdenum electrode is adhered to the other end of each of aluminum sheet layers; the two molybdenum electrodes are connected with leads respectively; and the core of the voltage-stabilizing diode, thecore of the rectifying diode, the aluminum sheet layers and the molybdenum electrodes are packaged in the same shell. The integrated device of the invention has the combined functions of voltage-stabilizing tube and a rectifying tube, has the obviously advantages of small size, light weight and low manufacturing cost, has the advantage of use in circuits which are susceptible to generating surge voltage and surge current. The integrated circuit is particularly suitable to be used in highly integrated, small-sized and micro-sized electronic equipment and apparatus with a relay and a contactor.
Description
Technical field
The present invention and a kind of semiconductor voltage stabilizing rectification hybrid device belong to the semi-conductor electronic device technical field.
Background technology
Along with developing rapidly of modern science and technology, military electronic instrument and equipment are all developing the microminiaturization of device and integrated also imperative to microminiaturized and high integration direction.At present, employed semiconductor rectifier diode and voltage-stabiliser tube all are the diode structure form of independently two utmost points generally in the prior art, existing these voltages adjust voltage stabilizing didoe and rectifier diode not only exists the problem that volume is big, cost is high in use, be mounted relay, contactor etc. easily and have the problem that the surge voltage that produces in the circuit of solenoid device or surge current puncture but also exist, therefore, existing voltage is adjusted voltage stabilizing didoe or rectifier diode in use, and its result of use still is not ideal enough.
Summary of the invention
The objective of the invention is: provide that a kind of volume is little, manufacture craft is simple, cost is lower and is suitable for occurring easily the semiconductor voltage stabilizing rectification hybrid device that the circuit of surge voltage or electric current uses, to overcome the deficiencies in the prior art.
The present invention is achieved in that a kind of semiconductor voltage stabilizing rectification hybrid device of the present invention comprises housing, voltage stabilizing didoe tube core and rectifier diode tube core, the positive pole of the negative pole of its voltage stabilizing didoe tube core and rectifier diode tube core fits tightly and is one, all be fitted with the aluminium flake layer at the positive terminal of voltage stabilizing didoe tube core and the negative pole end of rectifier diode tube core, the other end at the aluminium flake layer all is fitted with a molybdenum electrode respectively, on two molybdenum electrodes, all be connected with lead-in wire, voltage stabilizing didoe tube core respectively, the rectifier diode tube core, aluminium flake layer and molybdenum electrode all are encapsulated in the same housing.
Above-mentioned voltage stabilizing didoe tube core is the silicon voltage regulator diode tube core; The rectifier diode tube core is the silicon diode tube core.
Above-mentioned housing is glass housing, plastic casing or resin-case.
Above-mentioned two lead-in wires that are connected with two molybdenum electrodes respectively are arranged on two ends or the same end of housing.
Lead-in wire is copper cash, nickel wire or iron-nickel alloy line.
Adjust diode and two kinds of tube cores of rectifier diode owing to adopted technique scheme, the present invention to be packaged with voltage simultaneously in same housing, hybrid device of the present invention has the function of voltage-stabiliser tube and rectifying tube simultaneously.When hybrid device of the present invention uses in relay or corresponding electronic circuit are housed, when circuit is oppositely connected, having bigger surge in the circuit occurs, this moment, the voltage stabilizing didoe end of hybrid device just can instantaneously sponge big surge, in the scope that circuit can bear, avoid the voltage clamping in the circuit circuit to be burnt; When the circuit forward is connected, bigger inverse electromotive force can appear in the circuit, and this moment, the rectifier diode end of hybrid device can stop big electromotive force again immediately, guaranteed that circuit is not broken down by high-voltage.The voltage stabilizing that hybrid device of the present invention has simultaneously and rectification characteristic can guarantee well that circuit normally moves.Therefore, the present invention compared with prior art, the present invention not only has the apparent chopsticks advantage that volume is little, in light weight, cost of manufacture is low, is suitable for the advantage used but also have in the circuit that occurs surge voltage or electric current easily.The present invention is particularly suitable for using in the electronic equipment with relay, contactor, high integration, miniaturization, microminiaturization and instrument.
Description of drawings
Fig. 1 is structural representation of the present invention;
Fig. 2 is the electric principle schematic of hybrid device of the present invention.
Embodiment
The present invention is further illustrated below in conjunction with drawings and Examples.
Embodiments of the invention: a kind of semiconductor voltage stabilizing rectification hybrid device of the present invention comprises housing 1, voltage stabilizing didoe tube core 2 and rectifier diode tube core 3, its voltage stabilizing didoe tube core 2 can adopt silicon voltage regulator diode tube core of the prior art, and rectifier diode tube core 3 can adopt existing silicon diode tube core; The positive pole of the negative pole of voltage stabilizing didoe tube core 2 and rectifier diode tube core 3 fitted tightly be one, at the negative pole end of the positive terminal of voltage stabilizing didoe tube core 2 and the rectifier diode tube core 3 layer of aluminum lamella 4 of all fitting respectively, then at the other end of two the aluminium flake layers 4 aluminium electrode 5 of all fitting respectively, all connect respectively on two aluminium electrodes 5 and go between 6, lead-in wire 6 can adopt copper cash, nickel wire or iron-nickel alloy line to make; At last voltage stabilizing didoe tube core 2, rectifier diode tube core 3, aluminium flake layer 4 and molybdenum electrode 5 all are encapsulated in the same housing 1; Housing 1 can adopt traditional glass housing, plastic casing or resin-case; When encapsulating, be connected with two molybdenum electrodes 5 respectively two lead-in wires 6 can be arranged on the two ends of housing 1 or be arranged on the same end of housing 1.
Claims (5)
1. semiconductor voltage stabilizing rectification hybrid device, comprise housing (1), voltage stabilizing didoe tube core (2) and rectifier diode tube core (3), it is characterized in that: the positive pole of the negative pole of voltage stabilizing didoe tube core (2) and rectifier diode tube core (3) fits tightly and is one, all be fitted with aluminium flake layer (4) at the positive terminal of voltage stabilizing didoe tube core (2) and the negative pole end of rectifier diode tube core (3), the other end at aluminium flake layer (4) all is fitted with a molybdenum electrode (5) respectively, on two molybdenum electrodes (5), all be connected with lead-in wire (6) respectively, voltage stabilizing didoe tube core (2), rectifier diode tube core (3), aluminium flake layer (4) and molybdenum electrode (5) all are encapsulated in the same housing (1).
2. semiconductor voltage stabilizing rectification hybrid device according to claim 1, it is characterized in that: voltage stabilizing didoe tube core (2) is the silicon voltage regulator diode tube core; Rectifier diode tube core (3) is the silicon diode tube core.
3. semiconductor voltage stabilizing rectification hybrid device according to claim 1, it is characterized in that: housing (1) is glass housing, plastic casing or resin-case.
4. semiconductor voltage stabilizing rectification hybrid device according to claim 1, it is characterized in that: two lead-in wires (6) that are connected with two molybdenum electrodes (5) are arranged on two ends or the same end of housing (1) respectively.
5. according to claim 1 or 4 described semiconductor voltage stabilizing rectification hybrid devices, it is characterized in that: lead-in wire (6) is copper cash, nickel wire or iron-nickel alloy line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101029222A CN102088016B (en) | 2009-12-04 | 2009-12-04 | Semiconductor voltage-stabilizing and rectifying integrated device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101029222A CN102088016B (en) | 2009-12-04 | 2009-12-04 | Semiconductor voltage-stabilizing and rectifying integrated device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102088016A CN102088016A (en) | 2011-06-08 |
| CN102088016B true CN102088016B (en) | 2013-09-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101029222A Active CN102088016B (en) | 2009-12-04 | 2009-12-04 | Semiconductor voltage-stabilizing and rectifying integrated device |
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| Country | Link |
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| CN (1) | CN102088016B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709276B (en) * | 2012-06-16 | 2014-11-12 | 中国振华集团永光电子有限公司 | Low-capacity metal packaged silicon transient voltage suppressor and manufacturing method thereof |
| CN102709333B (en) * | 2012-06-16 | 2014-11-12 | 中国振华集团永光电子有限公司 | Low-capacity glass solid packaged silicon transient voltage suppressor and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1144403A (en) * | 1995-08-28 | 1997-03-05 | 戴超智 | Semiconductor diode consisting of groove form casing component and packaging method |
| CN1596472A (en) * | 2001-06-01 | 2005-03-16 | Abb瑞士有限公司 | High power semiconductor module |
| CN101030571A (en) * | 2006-03-01 | 2007-09-05 | 矽莱克电子股份有限公司 | Commutating diode device and its production |
| CN201549503U (en) * | 2009-12-04 | 2010-08-11 | 中国振华集团永光电子有限公司 | Semiconductor voltage-stabilizing and rectifying hybrid device |
-
2009
- 2009-12-04 CN CN2009101029222A patent/CN102088016B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1144403A (en) * | 1995-08-28 | 1997-03-05 | 戴超智 | Semiconductor diode consisting of groove form casing component and packaging method |
| CN1596472A (en) * | 2001-06-01 | 2005-03-16 | Abb瑞士有限公司 | High power semiconductor module |
| CN101030571A (en) * | 2006-03-01 | 2007-09-05 | 矽莱克电子股份有限公司 | Commutating diode device and its production |
| CN201549503U (en) * | 2009-12-04 | 2010-08-11 | 中国振华集团永光电子有限公司 | Semiconductor voltage-stabilizing and rectifying hybrid device |
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| Publication number | Publication date |
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| CN102088016A (en) | 2011-06-08 |
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