CN1054236C - Producing method of semiconductor diode with laminar material strecture - Google Patents
Producing method of semiconductor diode with laminar material strecture Download PDFInfo
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- CN1054236C CN1054236C CN94113701A CN94113701A CN1054236C CN 1054236 C CN1054236 C CN 1054236C CN 94113701 A CN94113701 A CN 94113701A CN 94113701 A CN94113701 A CN 94113701A CN 1054236 C CN1054236 C CN 1054236C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The present invention relates to a manufacturing method for a semiconductor diode with a flaky material laminated structure. The method comprises the following steps: punching and shaping each part of a conductive element; moving an overline electrode welded joint to a bottom electrode plate; clamping a pipe chip between the welded joint and the bottom electrode board; melting tin solder pre-stuck on the pipe chip or the conductive element; corroding and oxidizing a pipe core section; spreading a jacket agent on the section; heating and solidifying; injecting silicone and adhesive spread in pipe core holes on a base plate; installing a base plate; installing a cover board, and heating and solidifying adhesive agent and silicone; terminal bar shearing, detecting, cutting, checking and packing.
Description
The present invention is a kind of producing method of semiconductor diode with the flaky material stepped construction.Many in recent years new industrial materials, new technology, new equipment and new markets demand are constantly impacted electronics unit, device is industrial, and at present the silicon rectifier diode of the output maximum axial lead plastic mould pressing type that still was before 20 years institute and develops encapsulates (Plastic Molded Axial Leaded Package), new little external form diode (SOD) is still very good not to the utmost, once fusion type of the twin columns electrode glass pipe encapsulation of signaling switch diode, and MELF encapsulates, and also shortcoming is a lot of.Need better design badly, the objective environment condition is also accumulated is enough to produce some better designs.
In year surplus silicon rectifier diode industrialization volume production in the semiconductor diode has 40, its main package design develops as described later:
1; metal can type-elder generation welds chip and two circular electrode plates of being cut into high lead tolerance solder plate; with silicon etchant corrosion tube core; and with oxidant oxidation generation silicon dioxide film; again with chip protection sealant (varnish Varnish for example; silicon rubber Silicone Rubber) protects and be loaded on die sites; again with this chip assembly and a copper buttock line weld tabs with high tin content; welding in the base element of metal can shell; secondly buttock line is pierced in the exhaust tube of loam cake; electric welding base and loam cake; the clamp exhaust tube is being pressed buttock line in vacuum tank, promptly finishes the encapsulation of metal can type diode.
From nineteen sixty the end of in, low-power (below 10 amperes) kind changes and adopts new encapsulation, but the higher-wattage kind still adopts this kind of encapsulation so far.And on chip assembly, improved.This kind of is encapsulated as good design, yet its cost is very high, centering low-power kind, the more economical practicality of the package design that follow-up developments are come out.
2, glass shell secondary sealing by fusing type-elder generation prepares copper-clad iron-nickel alloy line, glass orifice pearl, glass tube welding and becomes to organize separately part, another conductor terminal then prepares into lead bead assembly, weldering one metal hook-type bonding pad on the lead, with tube core assembly (preparing as above joint) and above-mentioned two wire assemblies welding, heat sealing glass pipe tail end and bead again, and finish the work of group structure.This kind of encapsulation quality is very poor, and cost is also high.
3, sealing by fusing type-elder generation of double columnar form electrode glass pipe becomes wire assembly with lead with the electric welding of iron-nickel alloy (DummetAlloy) cylinder.To have the die assembly of protective agent sealing, an open traverse is respectively installed on the two sides, is nested with a glass tube outside it, is held in the tool, and heating is fused on the electrode column glass tube in electric furnace, and while two electrode columns are also organized structure to press mode to follow chip and finished.
The group structure engineering of this design is very simple and easy, and it is also inexpensive to organize part separately, and main dealer adopter is many, as one ampere of rectifier diode of Fairchild Semicon ductors, and the signaling switch diode of each factory of the whole world, voltage stabilizing didoe etc.This kind of encapsulation still is the design of the most economical practicality of low-power kind so far.In recent years because the needs of surface mounted device (SMD) surface adhering soldered elements, and remodeling removes lead and becomes surface of metal electrode in conjunction with the encapsulation of (MELF) external form.MELF is packaged with two big shortcomings: one for not match with the circuit substrate thermal coefficient of expansion, when the circuit board assembly welding, easily make pipe component fracture or open circuit, loose contact.Its two in mechanization sampling, put part, adhesion, welding etc. in the engineering and be difficult for operation.
4, bead shell encapsulation (Glass Beaded Rectifier Package)-this is just invented in generation nineteen sixty by the unusual company of the U.S., at first cylindrical molybdenum matter electrode is become assembly with the lead electric welding, the wafer sputtering aluminum film that diffusion is finished, covering with matte (Mask Disc) again, be cut to the chip of truncated cone through the sandblast mill, chip engages do hard solder with electrode after mixed acid agent corrosion, again through being welded into the sour agent burn into oxidation of assembly chip, the glass dust slurry is coated with and wraps up in, glass sintering, lead is zinc-plated and finish making.
The cut off diameter of this kind of structure die is about 3 millimeters, surpasses this size promptly easily because of the thermal expansion difference tearing between silicon crystal and molybdenum electrode.This kind of is encapsulated as one of present best quality encapsulation, higher three times of being about the encapsulation of axial lead plastic mould pressing type of cost.Forward drop (Vf) is a little more than the soft soldering structure person of slicker solder system in addition.A shortcoming is that tubular form is the pearl type again, and is not easy to operate than the cylindrical tube person in user's application job.
5, axial lead plastic mould pressing type encapsulate-for developing mid-term in nineteen sixty, adopts through U.S., Europe, day each big factory, and its characteristics are simple structure, with low cost, the manufacturer of American technology manufacturer such as general equipment and Taiwan, continent, Malaysia etc. adopts the naked copper lead, the mixed acid etching process, cost is minimum, but bad, each factory of Japan and German ITT etc. then adopt nickel plating silver lead and alkaline corrosion, cost is higher, and right quality is better.
6, bead book jacket plastic mould pressing hood composite encapsulation-developed in 1972 by Taiwan General Instrument Corp., and obtain the patent of invention of country such as U.S., its characteristics are the good reverse parameter quality with glass book jacket, plastic mould pressing cylinder shell easy to use, and manufacturing cost only is about 15 times of the plastic mould pressing type.Be a large amount of producers of unique low cost in the high-quality kind of lead-type rectifier diode.
7, glass-film protects sealing by fusing type of chip tungsten post electrode glass pipe-this patent technology that develops for U.S. MICR-OSEMI company, its chip through the acid etching dissected valley to P type layer, constitute tangent plane nature of glass book jacket film through chemical vapor deposition method again, vacuum splashing and plating silverskin between chip and the tungsten electrode on the mat wafer engages as high temperature braze, while body shell also sealing by fusing is finished, and operation is to adopt to carry out within DIXSEALER programmable vacuum, inflation, the pressurized cabin, therefore its quality is that the present whole world is best, and widely U.S. army material, boat are too, industry such as senior instrument adopts.Cost is also very high on the other hand, is about tens of times of plastics proplasm.
8, little external form diode-Small Outline Diode is called for short SOD, and this design is to follow little external form triode SOT and develop into.Rectifier diode chip GPP until tool glass-film book jacket is full-fledged, and the side is able to volume production and goes on the market.Manufacture method is that GPP and lead frame are connect with lead base scolding tin, forms through plastic mould pressing shell, the moulding of terminal slitting again.GPP is because of being to the N layer from P face dissected valley, its corner cut to the P-N composition surface is negative corner cut (Negtive Beveled Junction Cut), and be subjected to the required requirement of mechanical strength of full wafer wafer (wafer) construction method, and the powerful stress restriction of glass-film when knot down, the etched groove degree of depth can't be dark excessively, so reverse proof voltage is lower than 1000 volts.This designs the quality restriction for GPP, simultaneously when the separation cuts of individual chip, no matter use diamond saw to cut or the molten cutting-up in the radium-shine back side, two kinds of worker's methods of jackknifing sheet all can cause the microcrack of otch, huge stress between glass-film and silicon wafer more shape is concentrated, become work cycle, potential failure factor under the temperature cycles.Moreover the manufacturing cost of GPP is very high, and for example one ampere of GPP makes an appointment with and one the one ampere identical cost of plastic mould pressing diode.The promptly accurate originally high cost of the shortcoming of this GPP and SOD encapsulation is the desirable not to the utmost part of SOD.
The inventor is because the disappearance of above-mentioned several traditional type diode package, and all traditional type diode packaging technologies are done the assessment of its pluses and minuses and effect, be engaged in the accumulation of various diode package many years of experience through the inventor, through design repeatedly, improvement, and comparison traditional type diode packaging technology, and develop a kind of " with producing method of semiconductor diode of flaky material stepped construction " that is suitable for various diode packaging technology meticulously, many desirable not to the utmost part at the traditional type diode packaging technology, improved, especially fully possessed full-automatic potentiality of producing from designing.
The object of the invention provides a kind of producing method of semiconductor diode with the flaky material stepped construction, and it comprises the following steps:
Die is installed, with sheet metal spare (1) punching press, to form: wire jumper electrode (11) with plumb joint (111), hearth electrode (13) and the intercell connector between said wire jumper electrode (11) and said hearth electrode (13), refer to (15) and terminal (14) with the button that forms respectively at said intercell connector (12) two ends, with said intercell connector bending so that this plumb joint (111) of said wire jumper electrode (11) moves to the top of above-mentioned said hearth electrode, die (2) is placed between said plumb joint (111) and the said hearth electrode (13), finishes die and install;
Welding installs member with this die 2, with the heating of electric stove, makes in advance on the die 2 or the melts soldering tin on the metalwork 1, and die 2 is being welded in the plumb joint 111 of wire jumper electrode 11 and die 2 welds of hearth electrode 13;
The burn into oxidation and the protection of die are finished part utilization alkalescence silicon etchant with this welding and oxidant carries out die corrosion and oxidation, to strengthen the generation of silicon dioxide film, the tube core protective agent is coated die, and be heating and curing.
Cover plate is installed, bonding agent 9 is coated on the installed surface of metalwork 1, this cover plate 10 is installed on it, then the button on the metalwork 1 is referred to 15 upwards bending cover plate 10 is fastened on the said metalwork 1, temperature, time according to setting are heated electric stove, to solidify said bonding agent and silicones;
Use Testing device of electrical parameter to test the electrical quantity of said diode and the positive pole identification secant of cutting diode, then each diode separated, thereby make diode, and with automatic packaging machine with the diode package of making.
For further specifying the technology used in the present invention means and effect thereof, embodiments of the invention and conjunction with figs. are described as follows in detail:
Brief Description Of Drawings
Fig. 1 is an encapsulation step flow chart of the present invention;
Fig. 2 to Fig. 7 is structure fabrication figure of the present invention;
Fig. 8 to Figure 11 is a structure fabrication constitutional diagram of the present invention;
Figure 12 to Figure 15 is another constitutional diagram of structure fabrication of the present invention.
See also Fig. 1, the step of the producing method of semiconductor diode with the flaky material stepped construction of the present invention is as the back:
First step, die is installed, see also Fig. 2, Fig. 3, Fig. 4 wire jumper electrode 11 punch formings with metalwork 1, and it is intercell connector (connecting strip) the 12 crimpings volume of this metalwork 1 is folded, make the plumb joint 111 of wire jumper electrode 11 move to hearth electrode 13 tops, the place, location of die 2 welding just, die 2 is placed in the plumb joint left side, it is middle with hearth electrode 13 to use guide plate that it is pushed the plumb joint 111 that omits jack-up, put down plumb joint 111, die 2 is held between plumb joint 111 and the hearth electrode 13, finishes die 2 and install; Enter second step.
Second step, welding, see also Fig. 3, Fig. 4 finishes part with first step, with electric stove heating, make pre-in 3 fusings of the scolding tin on the die 2 or on the metalwork 1, after the cooling die 2 is being welded in the plumb joint 111 of wire jumper electrode 11 and die 2 welds of hearth electrode 13, to finish welding; Enter third step.
Third step, see also Fig. 4, Fig. 5, Fig. 6, Fig. 7 with die 2 burn into oxidations and tube core protection sealing, second step is finished part, carry out the chemical corrosion of die 2 by alkaline silicon etchant 4, carry out oxidation with 5 pairs of silicon faces that etch of oxidant again, to strengthen the generation of silicon dioxide film; Die 2 is coated with these die 2 protection sealants 6 in dry back, and is heating and curing; (annotate: had the sealant of protection as the tube core that adopts, then third step can omit); Enter the 4th step.
The 4th step sees also Fig. 8, and 9 coatings of substrate 7 tube core holes, 71 depositing silicon resins 8 and bonding agent with these silicones 8 an amount of tube core holes 71 of injecting these substrates 7, are coated on 7 of the substrates with bonding agent 9; Enter the 5th step.
The 5th step, substrate 7 is installed, see also Fig. 8, Fig. 9 the die 2 of third step is being welded faced downwards, be positioned on the substrate 7 that the 4th step finishes, die 2 embeds in the tube core hole 71 of substrate 7 with wire jumper electrode 11 coordination sites, and bending metalwork 1 protrudes in the outer terminal 14 of substrate 71, makes the terminal 14 that forms diode, to finish the installation of substrate 7; Enter the 6th step.
The 6th step, cover plate 10 is installed, and sees also Fig. 8, Fig. 9, Figure 10, Figure 11, Figure 13 coating adhesive 9 is finished on metalwork 1 installed surface of part in the 5th step, this cover plate 10 is installed on it, and the bending cover plate buckles and refer to 15, finishes cover plate 10 and installs; Enter the 7th step.
The 7th step: bonding agent 9 and silicones 8 are heating and curing, and the 6th step is finished part, and with electric stove heating, the temperature through setting, time curing bonding agent 9 and silicones 8 are wherein finished bonding agent 9 and silicones 8 is heating and curing; Enter the 8th step.
The 8th step: terminal 14 slittings, detection, cut, sort and pack, see also Fig. 1, Fig. 2, Figure 12, the 7th step is finished part use automation, excise the intercell connector 141 of the terminal 14 between adjacent two diodes, test splice contact other diode terminal 14 with electric parameter test instrument, test its electric parameter, and store its test result; According to the storage assembly of test result, drive the positive pole identification corner cut 14a that cutting knife cuts out diode, by cutting each diode is separated from each other; According to the storage assembly of test result, the classification addressee, and with the diode made packing automatically in addition.
See also Figure 14, additional metals element 1b can be wound to upper cover plate 10b earlier, again warp around hardware to lower cover 101b, to form another kind of terminal.
See also Figure 15, additional metals element 1C can be prepared becomes pin type terminal 14C after body is finished, and bending 90 degree form the external form of pin type terminal, and cover plate can prepare earlier becomes the cover plate of tool heat radiating fin 10c.
Producing method of semiconductor diode with the flaky material stepped construction of the present invention, this substrate 7, it is an insulation heatproof material, be shaped on a tube core hole 71 on it with containing pipe chip 1 assembly, can be fit to various die, for example rectifier diode chip, signaling switch diode chip for backlight unit and voltage stabilizing didoe chip, other be shaped on an electrode connect cylindrical void 72 with the hold electrodes intercell connector lug boss after folding.
The advantage of the producing method of semiconductor diode with the flaky material stepped construction of the present invention is as follows:
1, can full-automaticly produce, cost of manufacture is very low, and equipment investment cost is low.
2, the main situation of using is assembled as circuit substrate, and its substrate material can be selected and the most general identical material of circuit substrate, the problem of no coefficient of thermal expansion differences.
3, the mechanical strength sealing of pipe structure is with to lead heat-sinking capability all good.
4, member prepares simple and easy, with low cost.
5, full sheet type body is for welding element SMD in optimal surface.
6, operation takes short traditional half of being about, and material stock all significantly reduces in the goods storage.
By above-mentioned promptly as can be known, producing method of semiconductor diode with the flaky material stepped construction of the present invention, through the inventor after encapsulation and structural improvement design, not only solve and use multinomial mould in the traditional type diode package method, control anchor clamps, with clamping indivedual part or half scattered products in addition, multinomial operation relies on manual work, cause efficient to improve, the manufacturing bottleneck that cost is also high, and make the producing method of semiconductor diode with the flaky material stepped construction of the present invention, have more effect and practicality.
Only the above only is a preferable possible embodiments of the present invention, and non-so promptly inflexible limit claim of the present invention is so the equivalence techniques and the structural change of using specification of the present invention and graphic content to do such as all in like manner all are contained in the scope of the present invention.
Claims (12)
1. the producing method of semiconductor diode of a flaky material stepped construction is characterized in that this method comprises the following steps:
Die is installed, with sheet metal spare (1) punching press, to form: wire jumper electrode (11) with plumb joint (111), hearth electrode (13) and the intercell connector between said wire jumper electrode (11) and said hearth electrode (13), refer to (15) and terminal (14) with the button that forms respectively at said intercell connector (12) two ends, with said intercell connector bending so that this plumb joint (111) of said wire jumper electrode (11) moves to the top of above-mentioned said hearth electrode, die (2) is placed between said plumb joint (111) and the said hearth electrode (13), finishes die and install;
Welding, this die (2) is installed member, with the heating of electric stove, make pre-in die (2) go up or metalwork (1) on melts soldering tin, die (2) is being welded in the plumb joint (111) of wire jumper electrode (11) and die (2) weld of hearth electrode (13);
The burn into oxidation and the protection of die are finished part utilization alkalescence silicon etchant with this welding and oxidant carries out die corrosion and oxidation, to strengthen the generation of silicon dioxide film, the tube core protective agent is coated die, and be heating and curing;
Substrate (7) tube core hole (71) depositing silicon resin and bonding agent coating are injected this substrate (7) tube core hole (71) in right amount with this silicones; Bonding agent is coated on substrate (7) face, and welding placed face down on substrate (7) with die (2), die (2) and wire jumper electrode (11) coordination sites are embedded in the tube core hole (71) of substrate (7) and bend metalwork (1) and protrude in the outer terminal (14) of substrate (7), make the terminal that forms diode;
Cover plate is installed, bonding agent (9) is coated on the installed surface of metalwork (1), this cover plate (10) is installed on it, then the button on the metalwork (1) is referred to (15) upwards bending cover plate (10) is fastened on the said metalwork (1), temperature, time according to setting are heated electric stove, to solidify said bonding agent and silicones;
Use Testing device of electrical parameter to test the electrical quantity of said diode and the positive pole identification secant of cutting diode, then each diode separated, thereby make diode, and with automatic packaging machine with the diode package of making.
2. as the producing method of semiconductor diode of the said flaky material stepped construction of claim 1, it is characterized in that with said plate shape substrates (7), cover plate (10), and sheet metal spare (1) forms the semiconductor diode body with bonding agent is bonding with overlapped way.
3. as the producing method of semiconductor diode of the said flaky material stepped construction of claim 1, it is characterized in that said substrate (7) is an insulating temperature resistant meterial, be shaped on a tube core hole on it with containing pipe chip (2) with hold wire jumper electrode (11).
4. as the producing method of semiconductor diode of the said flaky material stepped construction of claim 1, it is characterized in that this die (2) can be the diode chip for backlight unit of multiple model.
5. as the producing method of semiconductor diode of the said flaky material stepped construction of claim 4, it is characterized in that this die is rectifier diode chip, signaling switch diode chip for backlight unit and voltage stabilizing didoe chip.
6. as the producing method of semiconductor diode of the said flaky material stepped construction of claim 1, it is characterized in that said silicones is filled in the tube core hole of this substrate (7), to protect said diode chip for backlight unit.
7. as the producing method of semiconductor diode of the said flaky material stepped construction of claim 1, it is characterized in that said wire jumper electric wire (11), said hearth electrode (13), said terminal (14), said intercell connector and said button refer to that (15) all are the parts of said metalwork (1).
8. as the producing method of semiconductor diode of the said flaky material stepped construction of claim 1, it is characterized in that making the plumb joint (111) of said wire jumper electrode (11) move to the top of said wire jumper electrode (11) by the intercell connector between said wire jumper electrode (11) and the said hearth electrode (13) being folded into vertical folded structure.
9. as the semiconductor diode of the said flaky material stepped construction of claim 1, it is characterized in that in cut district of said intercell connector, connect said wire jumper electrode (11) and hearth electrode (13) respectively, the bar district of this cut-out is positioned at two different unit of diode.
10. as the producing method of semiconductor diode of the said flaky material stepped construction of claim 1, it is characterized in that said metalwork (1) has two corresponding terminal parts and corresponding to the button finger branch of each terminal part, said terminal part and said button finger branch are deformed so that said substrate and said cover plate and said metalwork (1) are fastened.
11., it is characterized in that hardware (1b) is wound to upper cover plate (10b) earlier, and then with the anti-lower cover (101b) that is wound to of hardware (1b) as the producing method of semiconductor diode of the said flaky material stepped construction of claim 1.
12. producing method of semiconductor diode as the said flaky material stepped construction of claim 1, it is characterized in that preparing hardware (1c) and have the pin type terminal, bending 90 degree formed the external form of pin type terminal after body was finished, and cover plate can be prepared into the cover plate with heat radiating fin earlier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN94113701A CN1054236C (en) | 1994-10-31 | 1994-10-31 | Producing method of semiconductor diode with laminar material strecture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN94113701A CN1054236C (en) | 1994-10-31 | 1994-10-31 | Producing method of semiconductor diode with laminar material strecture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1122517A CN1122517A (en) | 1996-05-15 |
| CN1054236C true CN1054236C (en) | 2000-07-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN94113701A Expired - Fee Related CN1054236C (en) | 1994-10-31 | 1994-10-31 | Producing method of semiconductor diode with laminar material strecture |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1054236C (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100443248C (en) * | 2005-02-07 | 2008-12-17 | 林茂昌 | Diode machining welding method and special carbon graphite welding board |
| CN100433282C (en) * | 2006-02-23 | 2008-11-12 | 华南师范大学 | Power type light-emitting diode device and its manufacturing method |
| CN101414567B (en) * | 2007-10-16 | 2010-11-17 | 力成科技股份有限公司 | Wafer encapsulation procedure capable of degenerating pre-calcination test and high-temperature test |
| CN101908493B (en) * | 2010-07-07 | 2011-10-26 | 天水天光半导体有限责任公司 | Process for producing hybrid integrated circuit |
| CN107845575A (en) * | 2017-11-03 | 2018-03-27 | 浙江人和光伏科技有限公司 | A kind of production method of thin slice diode |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4879589A (en) * | 1988-01-25 | 1989-11-07 | Semetex Corporation | Hermetic leadless semiconductor device package |
| JP4110961B2 (en) * | 2002-12-24 | 2008-07-02 | 株式会社デンソー | Method for producing gas sensitive membrane for gas sensor |
-
1994
- 1994-10-31 CN CN94113701A patent/CN1054236C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4879589A (en) * | 1988-01-25 | 1989-11-07 | Semetex Corporation | Hermetic leadless semiconductor device package |
| JP4110961B2 (en) * | 2002-12-24 | 2008-07-02 | 株式会社デンソー | Method for producing gas sensitive membrane for gas sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1122517A (en) | 1996-05-15 |
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