CN217655871U

CN217655871U - Chip for improving silver adhesive climbing height in welding process

Info

Publication number: CN217655871U
Application number: CN202220662944.5U
Authority: CN
Inventors: 陈建华; 汪利民; 瞿伟; 胡杰; 黄鑫
Original assignee: Chongqing Wanguo Semiconductor Technology Co ltd
Current assignee: Chongqing Wanguo Semiconductor Technology Co ltd
Priority date: 2022-03-25
Filing date: 2022-03-25
Publication date: 2022-10-25
Anticipated expiration: 2032-03-25

Abstract

The utility model discloses a chip for improving silver colloid climbing height in the welding process, which relates to the field of chip design, wherein the periphery side of the chip is provided with a ladder-shaped anti-climbing colloid lug, the number of the anti-climbing colloid lug is more than or equal to 1, the total height of the anti-climbing colloid lug is Z2, the distance between one side of the anti-climbing colloid lug, which is close to the upper surface of the chip, and the upper surface of the chip is Z1, and the thickness of the chip is the sum of Z1 and Z2; the ratio of Z2 to the sum of Z1 and Z2 is A, and the value range of A is 10-90%. Through the utility model discloses the chip scrap rate that the wafer cutting method cutting obtained falls to 0% from 3.5%, improves product yield, reliability and economic benefits greatly.

Description

Chip for improving silver adhesive climbing height in welding process

Technical Field

The utility model relates to a chip design field, concretely relates to improve chip that silver colloid climbed in welding process.

Background

Silicon-based wafer dicing is currently a well-established technology. Generally, before the wafer is cut, the wafer is stuck and fixed, then the size and thickness of the wafer are measured, and finally the wafer is cut by selecting an appropriate blade.

As shown in fig. 1, the wafer is generally diced in the same X direction, and then the wafer is diced in a Y direction perpendicular to the X direction. For a common single chip, the periphery of the chip after cutting is relatively flat or slightly uneven. As shown in fig. 2, in general, even if the dicing is performed several times, the dicing surface of the chip is made flat.

The process is shown in fig. 3, and a highly repetitive phenomenon is found in the current cutting technique during the production process: after the wafer is cut, the edge of the back of the chip has a phenomenon of a metal coating edge curling gap. These metal coatings are present on the backside of the wafer prior to dicing. The metal coatings are partially curled due to the continuous cutting friction between the blade and the wafer entity during the cutting process. In the process of being absorbed and pulled, the chips with the edge metal plating layer curling phenomenon can generate the phenomenon that the local metal plating layer curling edge generates tearing gaps. The notches further cause that when the chip is welded, the liquid welding material is extruded and then preferentially overflows from the areas of the notches, and then the welding material climbs up preferentially in the vertical areas of the areas, so that the product is scrapped.

The silver paste run-up is generally expressed as a ratio of the height of the silver paste in the vertical direction of the thickness of the chip divided by the thickness of the chip, as shown in fig. 2. Silver paste run-up to 90% of the chip height can result in product scrap.

SUMMERY OF THE UTILITY MODEL

Lead to the high problem of product disability rate and promote product reliability in order to improve local silver colloid and climb, the utility model provides an improve chip that silver colloid climbed in the welding process.

The utility model discloses an aim at is realized through following technical scheme: the chip for improving the silver adhesive climbing in the welding process comprises a chip body, wherein step-shaped anti-climbing adhesive convex blocks are arranged on the outer peripheral side of the chip body, and the number of the anti-climbing adhesive convex blocks is larger than or equal to 1.

Preferably, the total height of the anti-climbing rubber bump is Z2, the distance between one side of the anti-climbing rubber bump close to the upper surface of the chip and the upper surface of the chip is Z1, and the thickness of the chip is the sum of Z1 and Z2; the ratio of Z2 to the sum of Z1 and Z2 is A, and the value range of A is 10-90%.

Preferably, the thickness of the chip is less than or equal to 6mil; the total height Z2 of the anti-creeping glue lug is greater than or equal to 0.6mil, and the total height Z2 of the anti-creeping glue lug is less than or equal to 5.4mil.

More preferably, the total height of the anti-climbing rubber bump is Z2, the distance between one side of the anti-climbing rubber bump close to the upper surface of the chip and the upper surface of the chip is Z1, and the thickness of the chip is the sum of Z1 and Z2; the ratio of Z2 to the sum of Z1 and Z2 is A, and the value range of A is 30-70%.

More preferably, the thickness of the chip is less than or equal to 6 mils; the total height Z2 of the anti-creeping glue lug is larger than or equal to 1.8mil, and the total height Z2 of the anti-creeping glue lug is smaller than or equal to 4.2mil.

Preferably, the number of the anti-climbing rubber bumps is equal to 1, the height of the anti-climbing rubber bumps is Z2, the distance between the upper surfaces of the anti-climbing rubber bumps and the upper surface of the chip is Z1, and the thickness of the chip is the sum of Z1 and Z2; the ratio of Z2 to the sum of Z1 and Z2 is A, and the value range of A is 10-90%.

Preferably, the thickness of the chip is less than or equal to 6 mils; the total height Z2 of the anti-creeping glue lug is greater than or equal to 0.6mil, and the total height Z2 of the anti-creeping glue lug is less than or equal to 5.4mil.

More preferably, the number of the anti-climbing rubber bumps is equal to 1, the height of the anti-climbing rubber bumps is Z2, the distance between the upper surfaces of the anti-climbing rubber bumps and the upper surface of the chip is Z1, and the thickness of the chip is the sum of Z1 and Z2; the ratio of Z2 to the sum of Z1 and Z2 is A, and the value range of A is 30-70%.

More preferably, the thickness of the chip is less than or equal to 6 mils; the total height Z2 of anticreep gluey lug is more than or equal to 1.8mil, the total height Z2 of anticreep gluey lug is less than or equal to 4.2mil.

More preferably, the number of the anti-climbing rubber bumps is equal to 1, the height of the anti-climbing rubber bumps is Z2, the distance between the upper surfaces of the anti-climbing rubber bumps and the upper surface of the chip is Z1, and the thickness of the chip is the sum of Z1 and Z2; the ratio of Z2 to the sum of Z1 and Z2 is A, and the value of A is 50%.

The climbing height of the A value is less than 10%, the influence of the A value more than 90% on the rejection rate is small, but if the A value is large in the range, the climbing height is not much less than the A value, because the climbing position is similar to the direction of the vertex of a triangle, the higher the climbing height is, the smaller the climbing height is, the higher the climbing height is, the lower the climbing height is, the silver colloid climbing height exceeds 90%, and even when the A value is close to 90%, the silver colloid climbing height can be ignored; and approaching around 50% of the median value is most advantageous.

To sum up, compare with prior art, the utility model discloses following beneficial effect has:

(1) The utility model provides a chip can obviously improve the silver glue condition of climbing when the chip bonding to effectively reduce the disability rate in the product production process, and then improve product reliability and economic benefits.

The silver colloid climbs to reach 90% of chip height and is the condemned standard of volume production product execution of most companies, in order to leave partly space and give a large amount of products, the standard of doing the inspection to the SETUP board needs the silver colloid climbs the height standard more excellent in order to guarantee that volume production silver colloid climbs to be less than 90% of chip height, the utility model discloses can reach 75% that the silver colloid climbs to be less than the chip height, also be the standard that inventor engineer SETUP board was carried out.

(2) Fig. 7 is a comparison result of the common chip and the corresponding silver paste climbing during the chip welding of the utility model. From the results, the sample rejection rate of the conventional chip silver paste with a creep height of >90% was 3.5%. The chip scrap rate of this application falls to 0%, and the product yield promotes greatly.

Drawings

Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:

FIG. 1 is a schematic diagram of a wafer dicing method according to the prior art;

FIG. 2 is a schematic diagram showing the effect of a general wafer after dicing and a schematic diagram showing the height of silver paste in the prior art;

FIG. 3 is a diagram illustrating a backside metal plating curled gap of a chip after a background art wafer is diced;

fig. 4 is a schematic diagram of a wafer dicing method for improving a chip with silver paste climbing in a soldering process according to embodiment 1 of the present invention;

fig. 5 is a schematic view of the chip for improving the silver paste creepage in the welding process according to embodiment 1 of the present invention;

FIG. 6 is a schematic view of the silver paste run-up of a conventional chip in the background art and a chip for improving the run-up in the welding process according to embodiments 1-5 of the present invention;

fig. 7 is a schematic diagram showing comparison between a conventional chip in the background art and a chip for improving the silver paste climbing effect in the welding process according to embodiment 3 of the present invention;

Detailed Description

The following examples will assist those skilled in the art in further understanding the present invention, but are not intended to limit the invention in any way. It will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention. The endpoints of the ranges and any values disclosed herein are not limited to the precise range or value, and such ranges or values should be understood to encompass values close to those ranges or values. For the numerical ranges, each range between the endpoints and a separate point, and each separate point can be combined with each other to give one or more new numerical ranges, these numerical ranges should be considered as specifically disclosed herein, and the invention is described in detail below with reference to specific examples:

example 1

A chip for improving silver adhesive climbing in a welding process comprises a chip body, wherein step-shaped anti-climbing adhesive lugs are arranged on the outer peripheral side of the chip body, the number of the anti-climbing adhesive lugs is equal to 1, the height of each anti-climbing adhesive lug is Z2, the distance between the upper surface of each anti-climbing adhesive lug and the upper surface of the chip is Z1, and the thickness of the chip is the sum of Z1 and Z2; the ratio of Z2 to the sum of Z1 and Z2 is A, and the value of A is 10%.

The preparation method comprises the following steps:

step S1, wafer cutting preparation: when a wafer needing to be cut is received, whether a film is attached to the back surface of an incoming material of the wafer is checked. If the film is not pasted, the film is pasted on the back of the wafer. If the film is available, the back film needs to be checked for expiration. If the back film is expired, it needs to be replaced with an unexpired film.

S2, cutting the wafer: referring to fig. 1, after a wafer is prepared for each pre-cut operation, a blade 1 with a relatively wide cutting mark is selected and used for the first cutting of each scribe line of the wafer. The width of the cutting mark is W1, the cutting thickness is set to be Z1, and then the grooving cutting of each cutting path in the X direction is started.

When the blade 1 is moved to the nth cutting lane in the X direction, the system determines that the distance between the position of the blade 1 and the initial cutting lane in the X direction is the safe distance, and then starts to start the blade 2 to cut each cutting lane in the X direction. The insert has a width W2 and a cutting thickness Z2. Because W2< W1, after the chip is cut through by the blade 2, the anti-creeping glue bump is left on the cutting surface. W1 ranges from 15 to 40 μm, and W2 ranges from 15 to 30 μm.

The distance between the upper surface of the anti-climbing glue lug and the upper surface of the chip is Z1, and the thickness of the chip is the sum of Z1 and Z2; the ratio of Z2 to the sum of Z1 and Z2 is A, and the value of A is 10%.

When the blade 1 and the blade 2 have finished cutting the cutting streets in the X direction, the machine can automatically adjust the wafer direction and perform corresponding alignment. Then, the previous movement in the X direction is repeated in the Y direction until all the cutting lines in the Y direction are cut through.

At this point, the entire wafer has completed the dicing process, and each die has been diced into completely independent individual pieces. Then, the entire wafer is transferred to a die attach process.

S3, mounting a silver paste or solder paste chip: in the chip mounting process, the silver paste or the soldering paste is sprayed on the designated area above the copper frame, and then the machine can suck the chip and place the chip above the liquid silver paste or the soldering paste. At this time, if the local solder climbing occurs, the extruded silver paste is completely consumed and blocked by the step structure. And finally, sending the chip and the frame which are attached into a baking oven for high-temperature baking, welding and curing. To chip subsides dress process itself, just can according to normal technology execution, can not influence the utility model discloses an implement the result.

And S4, connecting and bonding the pins and the chip: and selecting a proper metal wire to perform connection bonding of the frame pin and the chip so as to complete electrical connection between the chip and the outside.

Step S5, plastic package: and (5) plastic packaging is carried out by using a plastic packaging material. The direction angle between the glue discharging direction of the die and the direction angle of the welding line is ensured, and the quality problems of wire punching and the like are avoided. And finally, carrying out post-curing treatment on the product.

S6, removing flash materials: and removing flash remained in the plastic packaging process by using high-pressure water.

S7, electroplating; before electroplating, firstly removing impurities and oxides on the surface of the frame, and secondly slightly corroding the surface part of the frame to improve the bonding force between the frame and the plating layer; then plating a tin layer on the surface of the frame by utilizing an electrochemical principle; then cleaning chemical residues on the surface of the product; and finally, baking.

S8, cutting ribs, separating and forming; and separating the product into independent individuals by using the punching male die and the punching female die.

Step S9, testing and packaging: and testing and screening the product according to the electrical property requirement specification of the product, and screening out various electrical property failures and appearance failures.

And (4) selecting proper carrier bands, cover bands and external packaging cartons for packaging the screened good products, and attaching labels containing complete product information.

Step S10, warehousing: and putting the packaged product into a warehouse with the temperature and humidity meeting the requirements for storage and waiting for shipment.

Finally, a chip prepared by the wafer cutting method for improving the silver adhesive creepage during the chip welding process shown in fig. 5 and 6 is obtained, in step S3, the creepage height of the local welding material is used as a detection index, the creepage height of the silver adhesive is lower than 75% of the chip height when the test machine is used for detecting, the highest creepage height is 72% of the chip height, the creepage height of the silver adhesive is higher than 90% of the chip height when the test machine is used for detecting, the number of the creepage height of the silver adhesive is 0, and the rejection rate is 0.

Example 2

The chip for improving the silver adhesive creepage in the welding process is different from the embodiment in that the value of A is 30%. Finally, the chip prepared by the wafer cutting method for improving the climbing height of the silver paste in the chip welding process shown in fig. 5 and 6 is obtained, as shown in fig. 7, in the step S3, the climbing height of the local welding material is used as a detection index, the climbing heights of the silver paste detected by the SETUP machine are all lower than 75% of the height of the chip, the highest climbing height is 61% of the height of the chip, and the number of the climbing heights of the silver paste detected by the mass production machine which are higher than 90% of the height of the chip is 0, that is, the rejection rate is 0.

Example 3

A chip for improving silver adhesive climbing in a welding process comprises a chip body, wherein step-shaped anti-climbing adhesive bumps are arranged on the outer peripheral side of the chip body, the number of the anti-climbing adhesive bumps is equal to 1, the height of each anti-climbing adhesive bump is Z2, the distance between the upper surface of each anti-climbing adhesive bump and the upper surface of the chip is Z1, and the thickness of the chip is the sum of Z1 and Z2; the ratio of Z2 to the sum of Z1 and Z2 is A, and the value of A is 50%.

The preparation method comprises the following steps:

step S1, wafer cutting preparation: when a wafer needing to be cut is received, whether a film is attached to the back surface of a wafer incoming material is checked. If the film is not pasted, the film is pasted on the back of the wafer. If the film is available, the back film needs to be checked for expiration. If the back film is expired, it needs to be replaced with an unexpired film.

Step S2, wafer cutting: referring to fig. 1, after a wafer is prepared for each pre-cut operation, a blade 1 with a relatively wide cutting mark is selected and used for the first cutting of each scribe line of the wafer. The width of the cutting mark is W1, the cutting thickness is set to be Z1, and then the grooving cutting of each cutting path in the X direction is started.

When the blade 1 is stepped to the Nth cutting path in the X direction, the system judges that the distance between the position of the blade 1 and the initial cutting path in the X direction is a safe distance, and then the blade 2 is started to cut each cutting path in the X direction. The insert has a width W2 and a cutting thickness Z2. Because W2< W1, after the chip is cut through by the blade 2, the anti-climbing rubber bump is left on the cutting surface. W1 ranges from 15 to 40 μm, and W2 ranges from 15 to 30 μm.

The distance between the upper surface of the anti-climbing glue lug and the upper surface of the chip is Z1, and the thickness of the chip is the sum of Z1 and Z2; the ratio of Z2 to the sum of Z1 and Z2 is A, and the value of A is 50%.

After the blades 1 and 2 have finished cutting the cutting streets in the X direction, the machine can automatically adjust the wafer direction and perform corresponding alignment. Then, the previous movement in the X direction is repeated in the Y direction until all the cutting lines in the Y direction are cut through.

At this point, the entire wafer has completed the dicing operation, and each chip has been diced into completely independent individual pieces. Then, the entire wafer is transferred to a die attach process.

S3, mounting a silver paste or solder paste chip: in the chip mounting process, the silver paste or the soldering paste is sprayed on the designated area above the copper frame, and then the machine can suck the chip and place the chip above the liquid silver paste or the soldering paste. At this time, if the local solder climbing occurs, the extruded silver paste is completely consumed and blocked by the stepped structure. And finally, sending the chip and the frame which are attached into a baking oven for high-temperature baking and welding curing. To chip subsides dress process itself, just can according to normal technology execution, can not influence the utility model discloses an implement the result.

Step S5, plastic package: and (5) plastic packaging is carried out by using a plastic packaging material. The angle between the glue outlet direction of the die and the direction of the welding line is ensured, and the quality problems such as wire punching and the like are avoided. And finally, carrying out post-curing treatment on the product.

S7, electroplating; before electroplating, impurities and oxides on the surface of the frame need to be removed, and then the surface part of the frame needs to be slightly corroded so as to improve the binding force between the frame and the plating layer; then plating a tin layer on the surface of the frame by using an electrochemical principle; then cleaning chemical residues on the surface of the product; and finally, baking.

S8, cutting ribs, separating and forming; and separating the product into independent individuals by utilizing the punching male die and the punching female die.

And (4) selecting proper carrier bands, cover bands and outer packaging cartons for packaging the screened good products, and attaching labels containing complete product information.

Finally, the chip prepared by the wafer cutting method for improving the climbing height of the silver paste in the chip welding process shown in fig. 5 and 6 is obtained, in the step S3, the climbing height of the local welding material is used as a detection index, the climbing height of the silver paste detected by the SETUP machine is lower than 75% of the height of the chip, the highest climbing height is 55% of the height of the chip, and the quantity of 90% of the climbing height of the silver paste detected by the mass production machine is 0, namely the rejection rate is 0.

Example 4

A chip for improving silver adhesive creepage in the welding process is different from the chip in the embodiment 1 in that the value of A is 70%. Finally, the chip prepared by the wafer cutting method for improving the climbing height of the silver paste in the chip welding process shown in fig. 5 and 6 is obtained, in the step S3, the climbing height of the local welding material is used as a detection index, the climbing height of the silver paste detected by the SETUP machine is lower than 75% of the height of the chip, the highest climbing height is 71% of the height of the chip, and the quantity of 90% of the climbing height of the silver paste detected by the mass production machine is 0, namely the rejection rate is 0.

Example 5

A chip for improving the silver paste climbing height in the welding process is different from the chip in the embodiment 1 in that the value of A is 85 percent. Finally, the chip prepared by the wafer cutting method for improving the climbing height of the silver paste in the chip welding process shown in fig. 5 and 6 is obtained, in the step S3, the climbing height of the local welding material is used as a detection index, a mass production machine is used for detecting that the quantity of 90% of the climbing height of the silver paste higher than the height of the chip is 0, namely the rejection rate is 0, and the highest climbing height is 85.5% of the height of the chip.

Example 6

A chip for improving silver adhesive climbing in a welding process comprises a chip body, wherein step-shaped anti-climbing adhesive lugs are arranged on the outer peripheral side of the chip body, the number of the anti-climbing adhesive lugs is 2, the height of the anti-climbing adhesive lugs is Z2, the distance between the upper surface of each anti-climbing adhesive lug and the upper surface of the chip is Z1, and the thickness of the chip is the sum of Z1 and Z2; the ratio of Z2 to the sum of Z1 and Z2 is A, and the value of A is 55%.

The preparation method comprises the following steps:

S2, cutting the wafer: referring to fig. 1, after a wafer is prepared for each pre-cut operation, a blade 1 with a relatively wide cutting mark is selected and used for the first cutting of each scribe line of the wafer. The width of the cutting mark is W1, the cutting thickness is set to be Z1, and then grooving cutting is carried out on each cutting path in the X direction.

When the blade 1 is stepped to the nth cutting path in the X direction, the system determines that the distance between the position of the blade 1 and the initial cutting path in the X direction is the safe distance, and then starts to start the blade 2 to cut each cutting path in the X direction. The insert has a width W2 and a cutting thickness Z2.

When the blade 2 is stepped to the nth cutting path in the X direction, the system determines that the distance between the position of the blade 2 and the initial cutting path in the X direction is the safe distance, and then starts to start the blade 3 to cut each cutting path in the X direction. The insert has a width W3 and a cutting thickness Z3.

Because W3< W2< W1, after the chip is cut through by the blade 3, two-stage anti-creeping glue bumps are left on the cutting surface. W1 ranges from 15 to 40 μm, W2 ranges from 15 to 30 μm, and W3 ranges from 15 to 20 μm.

(Z2 + Z3)/(Z1 + Z2+ Z3) is A, the value of A is 55%.

After the blades 1 and 2 have finished cutting the cutting streets in the X direction, the machine can automatically adjust the wafer direction and perform corresponding alignment. The previous X-direction motion is then repeated in the Y-direction until all of the Y-direction cuts have been made.

S3, mounting a silver paste or soldering paste chip: in the chip mounting process, the silver paste or the soldering paste is sprayed on the designated area above the copper frame, and then the machine can suck the chip and place the chip above the liquid silver paste or the soldering paste. At this time, if the local solder climbing occurs, the extruded silver paste is completely consumed and blocked by the step structure. And finally, sending the chip and the frame which are attached into a baking oven for high-temperature baking, welding and curing. To chip subsides dress process itself, just can according to normal technology execution, can not influence the utility model discloses an implement the result.

And S4, connecting and bonding the pin and the chip: and selecting a proper metal wire to perform connection bonding of the frame pin and the chip so as to complete electrical connection between the chip and the outside.

S6, removing flash materials: and (4) removing flash remained in the plastic packaging process by using high-pressure water.

S7, electroplating; before electroplating, firstly removing impurities and oxides on the surface of the frame, and secondly slightly corroding the surface part of the frame to improve the bonding force between the frame and the plating layer; then plating a tin layer on the surface of the frame by using an electrochemical principle; then cleaning chemical residues on the surface of the product; and finally, baking.

S9, testing and packaging: and testing and screening the products according to the electrical property requirement specification of the products, and screening out various electrical property failures and appearance failures.

Step S10, warehousing: and (5) putting the packaged product into a warehouse with the temperature and humidity meeting the requirements for storage and waiting for shipment.

Finally, a chip prepared by the wafer cutting method for improving the silver adhesive creepage during the chip welding process shown in fig. 5 and 6 is obtained, in step S3, the creepage height of the local welding material is used as a detection index, the creepage height of the silver adhesive is lower than 75% of the chip height by the test machine, the highest creepage height is 50% of the chip height, the creepage height of the silver adhesive is higher than 90% of the chip height by the mass production test machine, and the quantity of the creepage height of the silver adhesive is 0, that is, the rejection rate is 0.

Comparative example 1

A common chip takes the climbing height of a local welding material as a detection index, as shown in figure 7, the quantity of the climbing height of a SETUP machine inspection silver paste higher than 75% of the height of the chip and the climbing height of a mass production machine inspection silver paste higher than 90% of the height of the chip is 3.5%, namely the rejection rate is 3.5%, and a large amount of capacity loss and material waste are caused.

Comparative example 2

A chip, which is different from embodiment 3 in that, in the step S2, the distance between the upper surface of the anti-creeping glue bump and the upper surface of the chip in wafer cutting is Z1, and the thickness of the chip is the sum of Z1 and Z2; the ratio of Z2 to the sum of Z1 and Z2 is a, and the value of a is 5%, which is otherwise the same as in example 3.

As shown in fig. 5 and 6, in the final chip obtained in step S3, the local solder material creepage height is used as the detection index, and the number of the inspection silver paste creepage height of the SETUP machine station higher than 75% of the chip height and the inspection silver paste creepage height of the mass production machine station higher than 90% of the chip height is 3.0%, that is, the rejection rate is 3.0%

Comparative example 3

The chip is different from the chip in embodiment 3 in that the distance between the upper surface of the anti-creeping glue bump and the upper surface of the chip in wafer cutting is Z1, and the thickness of the chip is the sum of Z1 and Z2; the ratio of Z2 to the sum of Z1 and Z2 is A, the value of A is 95%, and other operation steps are the same as those in the embodiment 1.

As shown in fig. 5 and 6, in the chip obtained in the final step S3, the number of the inspection silver paste climbing height of the SETUP machine higher than 75% of the chip height and the inspection silver paste climbing height of the mass production machine higher than 90% of the chip height is 3.7% by using the local solder material climbing height as the detection index, that is, the rejection rate is 3.7%.

The foregoing description of the specific embodiments of the invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes or modifications may be made by those skilled in the art within the scope of the appended claims without departing from the spirit of the invention. The embodiments and features of the embodiments of the present application may be combined with each other arbitrarily without conflict.

Claims

1. The chip is characterized by comprising a chip body, wherein the outer peripheral side of the chip body is provided with step-shaped anti-climbing rubber convex blocks, and the number of the anti-climbing rubber convex blocks is greater than or equal to 1.

2. The chip for improving the silver adhesive creepage height in the welding process according to claim 1, wherein the total height of the anti-creeping adhesive bump is Z2, the distance between one side of the anti-creeping adhesive bump close to the upper surface of the chip and the upper surface of the chip is Z1, and the thickness of the chip is the sum of Z1 and Z2; the ratio of Z2 to the sum of Z1 and Z2 is A, and the value range of A is 10-90%.

3. The chip for improving silver paste climbing in the welding process according to claim 2, wherein the thickness of the chip is less than or equal to 6mil; the total height Z2 of the anti-creeping glue lug is greater than or equal to 0.6mil, and the total height Z2 of the anti-creeping glue lug is less than or equal to 5.4mil.

4. The chip for improving the silver paste climbing height in the welding process according to claim 1, wherein the total height of the anti-climbing paste bump is Z2, the distance between one side of the anti-climbing paste bump close to the upper surface of the chip and the upper surface of the chip is Z1, and the thickness of the chip is the sum of Z1 and Z2; the ratio of Z2 to the sum of Z1 and Z2 is A, and the value range of A is 30-70%.

5. The chip for improving silver paste climbing in the welding process according to claim 4, wherein the thickness of the chip is less than or equal to 6mil; the total height Z2 of the anti-creeping glue lug is larger than or equal to 1.8mil, and the total height Z2 of the anti-creeping glue lug is smaller than or equal to 4.2mil.

6. The chip for improving the silver paste climbing height in the welding process according to claim 1, wherein the number of the anti-climbing paste bumps is equal to 1, the height of the anti-climbing paste bumps is Z2, the distance between the upper surfaces of the anti-climbing paste bumps and the upper surface of the chip is Z1, and the thickness of the chip is the sum of Z1 and Z2; the ratio of Z2 to the sum of Z1 and Z2 is A, and the value range of A is 10-90%.

7. The chip for improving silver paste climbing in the welding process according to claim 6, wherein the thickness of the chip is less than or equal to 6mil; the total height Z2 of the anti-creeping glue lug is greater than or equal to 0.6mil, and the total height Z2 of the anti-creeping glue lug is less than or equal to 5.4mil.

8. The chip for improving the silver adhesive creepage height in the welding process according to claim 1, wherein the number of the anti-creeping adhesive bumps is equal to 1, the height of the anti-creeping adhesive bumps is Z2, the distance between the upper surfaces of the anti-creeping adhesive bumps and the upper surface of the chip is Z1, and the thickness of the chip is the sum of Z1 and Z2; the ratio of Z2 to the sum of Z1 and Z2 is A, and the value range of A is 30-70%.

9. The chip for improving silver paste climbing in the welding process according to claim 8, wherein the thickness of the chip is less than or equal to 6mil; the total height Z2 of the anti-creeping glue lug is larger than or equal to 1.8mil, and the total height Z2 of the anti-creeping glue lug is smaller than or equal to 4.2mil.

10. The chip for improving the silver paste climbing height in the welding process according to claim 1, wherein the number of the anti-climbing paste bumps is equal to 1, the height of the anti-climbing paste bumps is Z2, the distance between the upper surfaces of the anti-climbing paste bumps and the upper surface of the chip is Z1, and the thickness of the chip is the sum of Z1 and Z2; the ratio of Z2 to the sum of Z1 and Z2 is A, and the value of A is 50%.