WO2017010488A1 - Dispositif d'affichage et procédé de fabrication de dispositif d'affichage - Google Patents

Dispositif d'affichage et procédé de fabrication de dispositif d'affichage Download PDF

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Publication number
WO2017010488A1
WO2017010488A1 PCT/JP2016/070603 JP2016070603W WO2017010488A1 WO 2017010488 A1 WO2017010488 A1 WO 2017010488A1 JP 2016070603 W JP2016070603 W JP 2016070603W WO 2017010488 A1 WO2017010488 A1 WO 2017010488A1
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Prior art keywords
film
light emitting
pixel
emitting film
vapor deposition
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PCT/JP2016/070603
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English (en)
Japanese (ja)
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学 二星
伸一 川戸
井上　智
勇毅 小林
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シャープ株式会社
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Priority to US15/735,298 priority Critical patent/US20180166511A1/en
Publication of WO2017010488A1 publication Critical patent/WO2017010488A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145—Arrangements of the electroluminescent material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/162—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using laser ablation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers

Definitions

  • the present invention relates to a display device, in particular, an organic EL display device and a manufacturing method thereof.
  • an organic EL (Electroluminescence) display device is excellent as an excellent flat panel display because it can realize low power consumption, thinning, and high image quality. Has attracted attention.
  • a vapor deposition film including a light emitting film that emits red, green, and blue is separately applied.
  • a method of forming and using a full color display is frequently employed.
  • Patent Documents 1 and 2 using a photolithography process and a dry etching process, It describes a method of forming a vapor deposition film including a light emitting film by a coating method.
  • Patent Document 3 describes a laser ablation processing method that selectively removes an organic light-emitting film formed on an ITO thin film using laser light.
  • Patent Document 4 describes forming an organic layer patterned by a light irradiation dry etching method in which a resist pattern is used as a mask to irradiate and pattern an organic material layer.
  • an anode 101 As shown in FIG. 14A, conventionally, an anode 101, a hole injection film / hole transport film (HIL / HTL) 102, and a blue light-emitting film (EML (B )) 103, a hole blocking film (HBL) 104, an electron transport film (ETL (sacrificial film)) 105, and a protective layer 106 are stacked in this order, and then a photolithography process is used only for a portion that becomes a blue pixel. Then, a resist 107 is formed.
  • HIL hole injection film / hole transport film
  • EML blue light-emitting film
  • HBL hole blocking film
  • ETL electron transport film
  • each film including the blue light emitting film in a region where the resist 107 is not formed is removed by a dry etching process, for example, using the resist 107 as a mask and ultraviolet rays or oxygen plasma (O 2 plasma).
  • O 2 plasma oxygen plasma
  • each film including the green light emitting film in a region where the resist 107 is not formed is removed by ultraviolet rays or oxygen plasma (O 2 plasma).
  • O 2 plasma oxygen plasma
  • each film including a red light emitting film is formed on the entire surface, and then the resist 107 formed on the blue pixel and the green pixel is peeled off, thereby forming the film on the resist 107.
  • Each film including the red light emitting film is removed, and each film including the red light emitting film is left only in a portion other than the blue pixel and the green pixel.
  • the resist 107 is formed again using only a portion of the blue pixel, the green pixel, and the red pixel using a photolithography process. Then, using the resist 107 as a mask, each film including the red light emitting film in the region where the resist 107 is not formed is removed with ultraviolet rays or oxygen plasma (O 2 plasma), and each blue light emitting film is included in the blue pixel. The film and the resist 107 are in a state in which each film including the green light emitting film and the resist 107 are formed in the green pixel, and each film including the red light emitting film and the resist 107 are formed in the red pixel. . Finally, the resist 107 is removed.
  • O 2 plasma oxygen plasma
  • the resist 107 is patterned and formed three times. Since the resist 107 needs to be peeled off three times and each film including the light emitting film of each color needs to be deposited for each color pixel, the manufacturing process is long and the productivity is low. Further, since it is necessary to perform film processing for film processing such as a protective layer 106 made of a water-soluble material or an inorganic oxide, and an electron transport film (ETL (sacrificial film)) 105 for each color pixel. The process loss is more than three times.
  • ETL electron transport film
  • the characteristics of the light emitting element are deteriorated due to various stripping solutions, etching solutions, ultraviolet rays, and oxygen plasma used in the photolithography process and the etching process.
  • an element having poor moisture resistance is affected (efficiency reduction, life deterioration).
  • a color shift effect of optical interference
  • a change in film thickness of the light-emitting element including the electron transport film (ETL (sacrificial film)) 105 or a light-emitting element characteristic Decrease in luminous efficiency and lifetime.
  • the lower layer of the organic light emitting film that is a film to be removed by laser ablation is an ITO thin film.
  • the organic light-emitting film is not devised to protect the lower layer, such as When the organic light emitting film is laminated and the upper organic light emitting film is removed by laser ablation, the lower organic light emitting film is damaged. Therefore, when such an organic light emitting film and a laser ablation processing method are used, it is not possible to suppress the color shift of the light emitting element and the deterioration of the light emitting element characteristics.
  • the present invention has been made in view of the above-described problems, and has an object to provide a display device and a method for manufacturing the display device that are highly productive and can suppress color misalignment of light emitting elements and deterioration of light emitting element characteristics.
  • the display device of the present invention includes a first pixel and a second pixel that emit light having different peak wavelengths, and a reflective electrode and a semi-transmissive reflective electrode provided in each of the pixels.
  • the first light emitting film is formed on the first pixel
  • the second light emitting film is formed on the second pixel
  • the vapor deposition film formed on the first light emitting film is formed on the first pixel.
  • the film is characterized in that the remaining ratio of the film to the heat generated by the laser light irradiation is higher than that of the vapor deposition film formed on the light emitting film 2.
  • the deposited film formed on the first light-emitting film has a higher film remaining ratio to the heat generated by laser light irradiation than the deposited film formed on the second light-emitting film. Since it is a film, for example, in order to improve productivity during the manufacturing process of the display device, the second light emitting film and the second light emitting film are formed on the vapor deposition film formed on the first light emitting film. Even when the vapor deposition film formed on the light emitting film is formed and the second light emitting film and the vapor deposited film formed on the second light emitting film are removed by heating with laser light, the first light emitting film is formed.
  • a display device that can suppress the influence on the light emitting film and the deposited film formed below the first light emitting film, has high productivity, and can suppress the color shift of the light emitting element and the deterioration of the light emitting element characteristics can be realized.
  • a method for manufacturing a display device of the present invention includes a first pixel and a second pixel that emit light of different peak wavelengths provided on a substrate, and light emission provided in each of the pixels.
  • a display device comprising a film, a reflective electrode, and a transflective electrode, wherein the light emitting film and the reflective electrode are arranged so that light having the peak wavelength of the pixel can be extracted from the transflective electrode.
  • the film Removing the second vapor deposition film including the second light emitting film, and in the first vapor deposition film forming step, the vapor deposition film formed on the first light emitting film includes the first light emitting film, In the second deposited film forming step, the film has a higher residual ratio of the film to heat generated by laser light irradiation than the deposited film formed on the second light emitting film.
  • the vapor deposition film formed on the first light emitting film is formed on the second light emitting film in the second vapor deposition film forming step. Since the remaining ratio of the film to the heat generated by the laser beam irradiation is higher than that of the deposited film, the second light emitting film including the second light emitting film formed other than the second pixel using the laser beam.
  • the step of removing the deposited film when the film on the deposited film formed on the first light emitting film is removed by heating with a laser beam, the first light emitting film and the first light emitting are also removed.
  • the manufacturing method of the display apparatus which can suppress the influence on the vapor deposition film formed under a film
  • a display device and a manufacturing method of a display device that are highly productive and can suppress a color shift of a light emitting element and a decrease in light emitting element characteristics.
  • FIG. (A)-(d) is a figure which shows an example of the process of forming a vapor deposition film in B pixel of the organic electroluminescence display shown in FIG.
  • FIGS. 3A to 3D are examples of a process subsequent to the process shown in FIG. 3D and a process for forming a vapor deposition film on the G pixel and the R pixel of the organic EL display device shown in FIG. FIG.
  • FIG. It is a figure which shows schematic structure of the organic electroluminescence display which concerns on other one Embodiment of this invention.
  • FIG. (A)-(d) is a figure which shows an example of the process of forming a vapor deposition film in G pixel of the organic electroluminescence display shown in FIG.
  • FIGS. 7A to 7D are examples of processes subsequent to the process shown in FIG. 7D, in which a deposited film is formed on the R pixel and the B pixel of the organic EL display device shown in FIG. FIG.
  • FIG. (C)-(d) is a figure which shows schematic structure of the organic electroluminescence display which concerns on another one embodiment of this invention.
  • FIGS. 10A to 10D are diagrams showing an example of a process for forming a vapor deposition film on the R pixel of the organic EL display device shown in FIG.
  • FIGS. 12A to 12D are examples of processes subsequent to the process shown in FIG. 12D, in which a deposited film is formed on the G pixel and the B pixel of the organic EL display device shown in FIG.
  • (b) is a figure for demonstrating the conventional method of forming the vapor deposition film containing a light emitting film by a painting method using a photolitho process and a dry etching process.
  • FIGS. 1 to 13 Embodiments of the present invention will be described with reference to FIGS. 1 to 13 as follows.
  • components having the same functions as those described in the specific embodiment may be denoted by the same reference numerals and description thereof may be omitted.
  • FIG. 1 is a diagram showing a schematic configuration of the organic EL display device 9.
  • the anode electrode 2 reflection electrode
  • the IZO film 3a hole injection film / hole transport film (HIL / HTL) 4a
  • the blue light emitting film (EML (B )) 4b an electron transport film (ETL) 4c
  • an electron injection film not shown
  • a cathode electrode 8 semi-transmissive reflective electrode
  • the electron transport film (ETL) 4c is made of the same material as the electron transport film (ETL) 6d in the G pixel and the R pixel, and is thicker than the electron transport film (ETL) 6d in the G pixel and the R pixel. ing.
  • the anode electrode 2 reflection electrode
  • the IZO film 3b hole injection film / hole transport film (HIL / HTL) 6a
  • the green light emitting film (EML (G)) 6b A red light emitting film (EML (R)) 6c
  • an electron transport film (ETL) 6d an electron injection film (not shown)
  • a cathode electrode 8 semi-transmissive reflective electrode
  • an anode electrode 2 reflection electrode
  • an IZO film 3c hole injection film / hole transport film (HIL / HTL) 6a
  • a green light emitting film (EML (G)) 6b A red light emitting film (EML (R)) 6c
  • an electron transport film (ETL) 6d an electron injection film (not shown)
  • a cathode electrode 8 semi-transmissive reflective electrode
  • the film thickness of the IZO films 3a, 3b, and 3c of each pixel can be determined as follows.
  • the B pixel, G pixel, and R pixel emit light having different peak wavelengths ( ⁇ ).
  • the B pixel emits blue light having a peak wavelength ( ⁇ ) of 450 nm
  • the G pixel emits light.
  • Green light having a peak wavelength ( ⁇ ) of 530 nm is emitted
  • red light having a peak wavelength ( ⁇ ) of 600 nm is emitted from the R pixel.
  • the distance between the anode electrode 2 (reflection electrode) and the light emitting film in each pixel is preferably a peak wavelength ( ⁇ ) ⁇ 1/4 ⁇ (2N ⁇ 1) (where N is a natural number).
  • the film thickness of the IZO film 3a and the hole injection film / hole transport film (HIL / HTL) formed between the IZO film 3a and the blue light emitting film (EML (B)) 4b It is sufficient that the film thickness including the film thickness of 4a satisfies 450 nm ⁇ 1/4 ⁇ (2N ⁇ 1).
  • the film thickness of the hole injection film / hole transport film (HIL / HTL) is the same in each pixel, the film thickness of the IZO films 3a, 3b, and 3c is different in each pixel. It becomes.
  • the total film thickness of 6a only needs to satisfy 530 nm ⁇ 1/4 ⁇ (2N ⁇ 1).
  • the thickness of the IZO film 3c, the IZO film 3c, and the red light emitting film ( The film thickness of the hole injection film / hole transport film (HIL / HTL) 6a formed with the EML (R)) 6c and the film thickness of the green light emitting film (EML (G)) 6b are combined.
  • the film thickness should satisfy 600 nm ⁇ 1/4 ⁇ (2N ⁇ 1). Note that N in the above equations is the same natural number.
  • IZO IndiumZinc Oxide
  • transparent conductive film transmission film
  • ITO Indium Tin Oxide
  • FIG. 2 is a diagram for explaining a manufacturing process of the organic EL display device 9 shown in FIG.
  • FIG. 3A to 3D are views for explaining a process of forming a vapor deposition film on the B pixel of the organic EL display device 9.
  • FIG. 3A to 3D are views for explaining a process of forming a vapor deposition film on the B pixel of the organic EL display device 9.
  • FIG. 4 (a) to 4 (d) show an example of a process for forming a vapor deposition film on the G pixel and the R pixel of the organic EL display device 9 after the process shown in FIG. 3 (d).
  • FIG. 4 (a) to 4 (d) show an example of a process for forming a vapor deposition film on the G pixel and the R pixel of the organic EL display device 9 after the process shown in FIG. 3 (d).
  • the TFT substrate 1 shown in FIG. 3A is provided with a plurality of TFT elements.
  • FIG. 3A only two B pixels, one G pixel, and one R pixel are shown, but the numbers of B pixels, G pixels, and R pixels are the same as those in the organic EL display device.
  • a plurality of pixels are provided according to the resolution of 9, and one B pixel, one G pixel, and one R pixel adjacent to each other form one display unit for performing full color display.
  • the anode electrode 2 electrically connected to the drain electrode (or source electrode) of the TFT element provided for each pixel (B pixel, G pixel, R pixel).
  • the anode electrode 2 is made of Al in order to use the anode electrode 2 as a reflective electrode and to form a top emission type organic EL display device 9 that takes out light from the upper side in the figure opposite to the TFT substrate 1.
  • the present invention is not limited to this, and the anode electrode 2 may be formed with an Ag film.
  • the organic EL display device 9 may be a bottom emission type.
  • a transparent conductive film forming step (S2 in FIG. 2) in which a transparent conductive film (also referred to as a conductive light transmission film) is formed on the anode electrode 2 by patterning for each pixel will be described.
  • the above-described electrode formation step (S1 in FIG. 2) and the transparent conductive film formation step (S2 in FIG. 2) are also referred to as an anode formation step.
  • an IZO (Indium Zinc Oxide) film 3a which is a transparent conductive film, is formed on the anode electrode 2, that is, so as to be electrically connected to the anode electrode 2.
  • 3b and 3c were formed by patterning.
  • the patterning of the anode electrode 2 and the IZO films 3a, 3b, and 3c can be performed using, for example, a resist and wet etching (or dry etching).
  • the anode electrode 2 and the IZO films 3a, 3b, and 3c serve as electrodes.
  • the IZO films 3a, 3b, and 3c are formed with a predetermined thickness for each pixel (B pixel, G pixel, and R pixel) in consideration of the light interference effect in each pixel (B pixel, G pixel, and R pixel). Is done.
  • the method of forming the IZO films 3a, 3b, 3c or the transmission film with a predetermined film thickness for each pixel is a microcavity (micro
  • This microcavity method is a method for improving chromaticity of light emission and light emission efficiency by a microcavity (microresonator) effect.
  • the microcavity is a phenomenon in which emitted light undergoes multiple reflections between the anode electrode and the cathode electrode and resonates, resulting in a steep emission spectrum and amplification of emission intensity at the peak wavelength.
  • the microcavity effect can be obtained, for example, by optimally designing the reflectance and film thickness of the anode electrode and the cathode electrode, the layer thickness of the organic layer, and the like.
  • a method for introducing such a resonance structure that is, a microcavity structure into an organic EL element
  • a method of changing the optical path length of the organic EL element in each pixel for each emission color is known.
  • the IZO films 3a, 3b, and 3c are formed with a predetermined film thickness for each pixel (B pixel, G pixel, and R pixel).
  • HIL / HTL hole injection film / hole transport film
  • EML (B) blue light emitting film
  • ETL electron transport film
  • a vapor deposition film 4 including a blue light emitting film (EML (B)) 4b was formed on the entire surface of the TFT substrate 1. As shown in FIG., although mentioned later in detail, the electron carrying film (ETL) 4c was formed thick in consideration of a post process.
  • EML blue light emitting film
  • the vapor deposition film 4 including the blue light emitting film (EML (B)) 4b other than the B pixel is irradiated with laser light to remove the vapor deposition film 4 including the blue light emitting film (EML (B)) 4b.
  • the vapor deposition film removing step (S4 in FIG. 2) including the light emitting film will be described.
  • laser light is irradiated through a mask 5 having a light shielding portion 5a and an opening 5b.
  • the light shielding portion 5a of the mask 5 is disposed on the B pixel portion of the TFT substrate 1, that is, the region where the anode electrode 2 and the IZO film 3a are laminated, and the opening 5b of the mask 5 is formed on the B substrate of the TFT substrate 1. Arranged outside the pixel portion. Therefore, the entire portion of the TFT substrate 1 other than the B pixel portion is irradiated with laser light.
  • the vapor deposition film 4 including the blue light emitting film (EML (B)) 4b is an organic material, and the IZO films 3b and 3c are inorganic materials.
  • the IZO films 3b and 3c are heated on the IZO films 3b and 3c and between the pixels.
  • the deposited film 4 including the formed blue light emitting film (EML (B)) 4b is selectively removed, and as shown in FIG. 3D, the blue light emitting film (EML (B) )) It can be patterned to leave the deposited film 4 containing 4b.
  • the blue light emitting film (EML (B)) of the B pixel is arranged.
  • the vapor deposition film 4 containing 4b is not irradiated with the laser beam, the laser beam is not damaged.
  • the vapor deposition film removing step including the blue light emitting film is preferably performed in a vacuum atmosphere or in an atmosphere where moisture and oxygen are as low as less than 10 ppm, for example.
  • a vacuum atmosphere or in an atmosphere where moisture and oxygen are as low as less than 10 ppm for example.
  • the case of irradiating laser light through the mask 5 is described as an example. However, when the irradiation width of the irradiated laser light is small enough to allow patterning, a mask is used. It is also possible to irradiate with laser light.
  • the laser beam used in the process of removing the deposited film including the blue light emitting film removes the deposited film including the light emitting film that does not have the deposited film including the light emitting film that needs to be protected in the lower layer by heating with the laser beam. Therefore, since it is not necessary to consider the suppression of heat conduction to other films by this laser beam, an extremely short time pulse (for example, Femto Second (10 ⁇ 15 )) It is not necessary to use a laser beam with an extremely short pulse of about Pico Second (10 ⁇ 12 ). For example, a laser beam with a relatively long pulse can be used. Therefore, in this embodiment, in consideration of shortening of the process time, in the deposition film removing process including the blue light emitting film, a laser beam having a relatively long pulse is used, but the present invention is not limited thereto. .
  • the deposition film including the light emitting film is patterned by heating with laser light, it is necessary to form or peel off the resist film as in the past. Absent.
  • a hole injection film / hole transport film (HIL / HTL) 6a, a green light emitting film (EML (G)) 6b, and a red light emitting film (EML (R)) 6c are formed on the entire surface of the TFT substrate 1.
  • the vapor deposition film forming step including the green light emitting film and the red light emitting film (S5 in FIG. 2) for sequentially depositing the electron transport film (ETL) 6d will be described.
  • a vapor deposition film 6 including a green light emitting film (EML (G)) 6b and a red light emitting film (EML (R)) 6c is formed on the entire surface of the TFT substrate 1. .
  • the green light emitting film (EML (G)) 6b and the red light emitting film (EML (R)) 6c are formed in common as a laminated film. Is a phosphorescent material, and it is easy to share the host material, and there is an advantage that it can be dealt with by switching only the dopant in the deposited film forming process including the green light emitting film and the red light emitting film.
  • the green light emitting film (EML (G)) 6b is the lower layer and the red light emitting film (EML (R)) 6c from the viewpoint of carrier characteristics, that is, the recombination balance of holes and electrons.
  • the vapor-deposited film 6 including the green light-emitting film (EML (G)) 6b and the red light-emitting film 6c was vapor-deposited such that the red light-emitting film (EML (R)) 6c was the lower layer and the green light-emitting film (
  • the deposited film 6 including the green light emitting film (EML (G)) 6b and the red light emitting film (EML (R)) 6c may be deposited so that the EML (G)) 6b is an upper layer. It should be noted that the film thickness of the IZO films 3b and 3c changes.
  • the green light-emitting film is removed by irradiating the vapor-deposited film 6 including the green light-emitting film (EML (G)) 6b and the red light-emitting film (EML (R)) 6c other than the G pixel and the R pixel with laser light.
  • the vapor deposition film removing step (S6 in FIG. 2) including the red light emitting film will be described.
  • laser light is irradiated through a mask 7 having a light shielding portion 7a and an opening 7b.
  • the light shielding portion 7a of the mask 7 is formed by laminating the G pixel portion and the R pixel portion of the TFT substrate 1, that is, on the region where the anode electrode 2 and the IZO film 3b are laminated, and the anode electrode 2 and the IZO film 3c.
  • the opening 7b of the mask 7 is disposed in a region other than the G pixel portion and the R pixel portion of the TFT substrate 1. Accordingly, the entire portion of the TFT substrate 1 other than the G pixel portion and the R pixel portion is irradiated with laser light.
  • the vapor deposition film 6 including the green light emitting film (EML (G)) 6b and the red light emitting film (EML (R)) 6c is an organic material
  • the B pixel portion of the TFT substrate 1 and between the pixels are heated by laser light.
  • the deposited film 6 including the green light emitting film (EML (G)) 6b and the red light emitting film (EML (R)) 6c is selectively removed.
  • the deposited film 4 including the blue light emitting film (EML (B)) 4b remains on the B pixel portion of the TFT substrate 1, and the green light emitting film (EML (G)) is formed on the G pixel portion and the R pixel portion of the TFT substrate 1.
  • 6b and the vapor-deposited film 6 including the red light emitting film (EML (R)) 6c can be patterned.
  • the light shielding portion 7a of the mask 7 is disposed on the G pixel and the R pixel of the TFT substrate 1, green light emission in the G pixel and the R pixel. Since the vapor deposition film 6 including the film (EML (G)) 6b and the red light emitting film (EML (R)) 6c is not irradiated with laser light, damage by the laser light does not occur.
  • the electron transport film (ETL) 4c includes the green light emitting film and the red light emitting film.
  • the laser beam used in the vapor deposition film removal step including the film is formed thicker assuming that the laser beam used in the vapor deposition film removal step including the blue light emitting film is a relatively long-time pulse laser beam.
  • the green light emitting film (EML (G)) 6b and the red light emitting film (EML (R)) 6c formed on the vapor deposition film 4 including the blue light emitting film (EML (B)) 4b are provided.
  • the deposited film 6 is removed by laser light irradiation, but the heat generated in this step can be made into the blue light emitting film (EML (B)) 4b and the hole injection film / hole transport film (HIL / HTL) 4a. This is so as not to affect as much as possible.
  • the process characteristics of patterning using heat generated by laser light irradiation also tend to cause variations (such as damage during patterning) in the thickness of the electron transport film (ETL) 4c of the B pixel.
  • the film thickness of the electron transport film (ETL) 4c is preferably a thick structure in which color change does not easily occur. As the film thickness of the electron transport film (ETL) 4c increases, as a result, the film thickness of the entire deposited film 4 including the blue light emitting film (EML (B)) 4b also increases.
  • an extremely short time pulse for example, an extremely short time pulse of about Femto Second (10 ⁇ 15 ) to Pico Second (10 ⁇ 12 )
  • the electron transport film (ETL) 4c can be formed thinner than in the case of using the laser light having a relatively long pulse as described above.
  • the vapor deposition film removing step including the green light emitting film and the red light emitting film is also preferably performed in a vacuum atmosphere or an atmosphere in which moisture and oxygen are less than 10 ppm.
  • an electron injection film (not shown) and a cathode electrode 8 were sequentially formed on the entire surface of the TFT substrate 1 and then patterned. Then, the organic EL display device 9 in which a plurality of organic EL elements (light emitting elements) were provided on the TFT substrate 1 was completed by sealing the entire TFT substrate 1 for each pixel.
  • LiF is used as the electron injection film, but the present invention is not limited to this.
  • the cathode electrode 8 (semi-transmissive reflective electrode), a laminated film of a thin Ag film and an ITO film is used, but the present invention is not limited to this.
  • the drive circuit for driving the plurality of organic EL elements may be provided on the TFT substrate 1 or may be provided externally on the TFT substrate 1.
  • the second patterning (green light emission) is performed on the deposition film 4 of the B pixel left in the first patterning (deposition film removal process including the blue light emitting film).
  • the electron transport film (ETL) 4c of the vapor deposition film 4 of the B pixel is replaced with the electron transport film of the G pixel and the R pixel. (ETL) It was formed thicker than 6d.
  • the method for reducing or avoiding laser damage in the vapor deposition film removing step including the green light emitting film and the red light emitting film on the vapor deposition film 4 of the B pixel is not limited to the above method.
  • At least a part of the electron transport film (ETL) 4c of the B pixel illustrated in FIG. 1 includes at least one of an inorganic material, an inorganic metal oxide, and a crystalline organic material. More than 6d of transport film (ETL) may be contained.
  • an extremely short time pulse for example, an extremely short time pulse of about Femto Second (10 ⁇ 15 ) to Pico Second (10 ⁇ 12 )
  • ETL electron transport film
  • the electron transport film (ETL) 4c of the B pixel is coated with an inorganic material or an inorganic metal oxide (for example, a low work function inorganic metal oxide (an alkali metal oxide of about ⁇ 3 eV, an alkaline earth metal oxide, or an oxidation thereof) Compound oxides)) and crystalline organic materials (such as organic materials that have a low glass transition, such as phenanthroline-based materials, and easily recrystallize), an electron transport film (ETL) Since the remaining rate and heat resistance of the film with respect to the heat generated by the laser light irradiation 4c can be improved, the influence of the heat generated by the laser light irradiation on the lower layer can be suppressed.
  • an inorganic material or an inorganic metal oxide for example, a low work function inorganic metal oxide (an alkali metal oxide of about ⁇ 3 eV, an alkaline earth metal oxide, or an oxidation thereof) Compound oxides)
  • crystalline organic materials such as organic materials
  • the crystalline organic material is a material that is crystallized even in an organic material and has a high film density.
  • an organic material having a low glass transition point for example, a glass transition point of less than 120 ° C.
  • crystallization of an organic material having a low glass transition point occurs due to heat generated by laser light irradiation.
  • heat absorption occurs at this time, the influence of heat generated by the laser light irradiation on the lower layer can be suppressed.
  • the electron transport film (ETL) 4c for the B pixel is formed to have a film thickness equal to or less than the film thickness of the electron transport film (ETL) 6d for the G pixel and the R pixel.
  • the (ETL) 4c may contain at least one of an inorganic material, an inorganic metal oxide, and a crystalline organic material more than the electron transport film (ETL) 6d of the G pixel and the R pixel.
  • the electron transport film (ETL) 4c of the B pixel is difficult to be etched by the laser light irradiation, or even if etched, the blue light emitting film (EML (B)) 4b or the hole injection film / positive It is desirable to have a film thickness that can sufficiently protect the hole transport film (HIL / HTL) 4a. In other words, it is desirable that the electron transport film (ETL) 4c of the B pixel has a high film remaining rate by laser light irradiation so as to ensure a film thickness of a certain level or more.
  • the electron transport films (ETL) 4c and 6d are formed of the same material and the same laser light is irradiated to both of the electron transport films (ETL) 4c and 6d, they are removed by the heat generated by the laser light irradiation. Since the film thickness of the electron transport films (ETL) 4c and 6d is constant, the remaining ratio of the film to the heat generated by the irradiation of the laser beam increases as the film thickness increases.
  • the electron transport film (ETL) 4c of the B pixel contains a large amount of inorganic material, inorganic metal oxide, or crystalline organic material, the electron transport film (ETL) 4c of the B pixel
  • the remaining ratio of the film to the heat generated by the laser light irradiation is higher than the remaining ratio of the film to the heat generated by the laser light irradiation of the electron transport film (ETL) 6d of the G pixel and the R pixel.
  • the remaining ratio of the film to the heat generated by the laser light irradiation is the heat generated by the laser light irradiation of the electron transport film (ETL) 6d of the G pixel and the R pixel. It is desirable that the film be higher than the remaining rate of the film.
  • the remaining ratio of the film to the heat generated by laser light irradiation is (film thickness after laser light irradiation for a predetermined period) / (initial film thickness before laser light irradiation) ⁇ 100.
  • anode electrode (reflection electrode), an IZO film, a hole injection film / hole transport film (HIL / HTL), a single-layer or double-layer light-emitting film (EML),
  • an organic EL light emitting device including an electron transport film (ETL), an electron injection film, and a cathode electrode (semi-transmissive reflective electrode)
  • ETL electron transport film
  • cathode electrode single-layer or double-layer light-emitting film
  • a hole blocking film or an electron blocking film as a carrier blocking film may be further provided.
  • the organic EL display device 9 shown in FIG. 1 and the electron transport film (ETL), which is an upper layer than the light emitting layer, are manufactured by a conventional general coating method in which evaporation is performed as a common layer in each pixel.
  • the difference from the EL display device is as follows.
  • the electron transport film (ETL) which is an upper layer from the light emitting layer, is deposited as a common layer in each pixel.
  • the green light emitting film (EML (G)) 6b and the red light emitting film (EML (R)) 6c are commonly formed as a laminated film.
  • An electron transport film formed on a blue light-emitting film of a pixel, for example, a B pixel is formed on an electron transport film and a red light-emitting film formed on a green light-emitting film of another pixel, the G pixel and the R pixel.
  • the green light emitting film and the red light emitting film are not formed as a laminated film if the film has a higher film remaining rate against heat generated by laser light irradiation than the electron transport film. Only the green light emitting film may be formed in the G pixel, and only the red light emitting film may be formed in the R pixel.
  • FIG. 5 is a diagram showing a schematic configuration of the organic EL display device 19.
  • the anode electrode 2 (reflecting electrode), the IZO film 13a, the hole injection film / hole transport film (HIL / HTL) 14a, and the green light emitting film (EML (G )) 14b, an electron transport film (ETL) 14c, an electron injection film (not shown), and a cathode electrode 8 (semi-transmissive reflective electrode) are sequentially stacked.
  • the electron transport film (ETL) 14c is made of the same material as the electron transport film (ETL) 16d in the R pixel and the B pixel, and is thicker than the electron transport film (ETL) 16d.
  • the anode electrode 2 reflection electrode
  • the IZO film 13b the hole injection film / hole transport film (HIL / HTL) 16a
  • the blue light emitting film (EML (B)) 16b the blue light emitting film (EML (B)) 16b
  • a red light emitting film (EML (R)) 16c an electron transport film (ETL) 16d
  • an electron injection film not shown
  • a cathode electrode 8 sini-transmissive reflective electrode
  • the anode electrode 2 (reflection electrode), the IZO film 13c, the hole injection film / hole transport film (HIL / HTL) 16a, the blue light emitting film (EML (B)) 16b, A red light emitting film (EML (R)) 16c, an electron transport film (ETL) 16d, an electron injection film (not shown), and a cathode electrode 8 (semi-transmissive reflective electrode) are laminated in this order.
  • FIG. 6 is a diagram for explaining a manufacturing process of the organic EL display device 19 shown in FIG.
  • FIG. 7A to 7D are diagrams for explaining a process of forming a vapor deposition film on the G pixel of the organic EL display device 19.
  • FIG. 7A to 7D are diagrams for explaining a process of forming a vapor deposition film on the G pixel of the organic EL display device 19.
  • FIG. 8A to 8D show an example of a process for forming a deposited film on the R pixel and the B pixel of the organic EL display device 19 after the process shown in FIG. 7D.
  • FIG. 8A to 8D show an example of a process for forming a deposited film on the R pixel and the B pixel of the organic EL display device 19 after the process shown in FIG. 7D.
  • FIG. 8A to 8D show an example of a process for forming a deposited film on the R pixel and the B pixel of the organic EL display device 19 after the process shown in FIG. 7D.
  • an electrode forming step (S1 in FIG. 6) in which the anode electrode 2 is patterned on each pixel and provided on the TFT substrate 10 will be described.
  • the anode electrode 2 electrically connected to the drain electrode (or source electrode) of the TFT element provided for each pixel (G pixel, R pixel, B pixel).
  • the drain electrode or source electrode of the TFT element provided for each pixel (G pixel, R pixel, B pixel).
  • a transparent conductive film forming step (S2 in FIG. 6) for forming a transparent conductive film (also referred to as a conductive light transmission film) on the anode electrode 2 by patterning for each pixel will be described.
  • the above-described electrode formation step (S1 in FIG. 6) and the transparent conductive film formation step (S2 in FIG. 6) are also referred to as an anode formation step.
  • an IZO (IndiumiZinc Oxide) film 13a which is a transparent conductive film, is formed on the anode electrode 2, that is, so as to be electrically connected to the anode electrode 2.
  • 13b and 13c were formed by patterning.
  • the IZO films 13a, 13b, and 13c are formed with a predetermined film thickness for each pixel (G pixel, R pixel, and B pixel) in consideration of the light interference effect in each pixel (G pixel, R pixel, and B pixel). Is done.
  • HIL / HTL hole injection film / hole transport film
  • EML (G) green light emitting film
  • ETL electron transport film
  • a vapor deposition film 14 including a green light emitting film (EML (G)) 14b was formed on the entire surface of the TFT substrate 10. As shown in FIG. In addition, although mentioned later in detail, the electron carrying film (ETL) 4c was formed thick in consideration of a post process.
  • EML green light emitting film
  • the vapor deposition film 14 including the green light emitting film (EML (G)) 14b other than the G pixel is irradiated with laser light, and the vapor deposition film 14 including the green light emitting film (EML (G)) 14b other than the G pixel is formed.
  • the vapor deposition film removal process (S4 in FIG. 6) including the green light emitting film to be removed will be described.
  • laser light is irradiated through a mask 15 having a light shielding portion 15a and an opening portion 15b.
  • the light shielding portion 15 a of the mask 15 is disposed on the G pixel portion of the TFT substrate 10, that is, the region where the anode electrode 2 and the IZO film 13 a are laminated, and the opening 15 b of the mask 15 is formed on the G substrate portion of the TFT substrate 10. Arranged outside the pixel portion. Therefore, the entire portion of the TFT substrate 10 other than the G pixel portion is irradiated with laser light.
  • the vapor deposition film 14 including the green light emitting film (EML (G)) 14b is an organic material, and the IZO films 13b and 13c are inorganic materials. Therefore, by heating with laser light, the IZO films 13b and 13c are heated on the IZO films 13b and 13c and between the pixels.
  • the deposited film 14 including the formed green light emitting film (EML (G)) 14b is selectively removed, and as shown in FIG. 7D, the green light emitting film (EML (G) )) It can be patterned to leave the deposited film 14 containing 14b.
  • the green light emitting film (EML (G)) of the G pixel is disposed.
  • the vapor deposition film 14 including 14b is not irradiated with the laser beam, the laser beam is not damaged.
  • the vapor deposition film removing step including the green light emitting film is preferably performed in a vacuum atmosphere or in an atmosphere where moisture and oxygen are as low as less than 10 ppm, for example.
  • the laser beam used in the process of removing the vapor deposition film including the green light emitting film removes the vapor deposition film including the light emitting film that does not have the vapor deposition film including the light emitting film that needs to be protected in the lower layer by heating with the laser light. Therefore, it is not necessary to consider the suppression of heat conduction to other films by this laser beam. Therefore, an extremely short time pulse (for example, Femto Second (10 ⁇ 15 ) to Pico Second (10 It is not necessary to use a laser beam with an extremely short pulse of about -12 ). For example, a laser beam with a relatively long pulse can be used. Therefore, in the present embodiment, in consideration of shortening of the process time, in the deposition film removing process including the green light emitting film, a relatively long pulse laser beam is used, but the present invention is not limited to this. .
  • a hole injection film / hole transport film (HIL / HTL) 16a, a blue light emitting film (EML (B)) 16b, and a red light emitting film (EML (R)) 16c are formed on the entire surface of the TFT substrate 10.
  • the vapor deposition film forming step including the blue light emitting film and the red light emitting film (S5 in FIG. 6) for sequentially depositing the electron transport film (ETL) 16d will be described.
  • a vapor deposition film 16 including a blue light emitting film (EML (B)) 16b and a red light emitting film (EML (R)) 16c is formed on the entire surface of the TFT substrate 10. .
  • the blue light emitting film (EML (B)) 16b and the red light emitting film (EML (R)) 16c are formed in common in the R pixel and the B pixel.
  • the blue light emitting film (EML (B)) 16b is the lower layer and the red light emitting film (EML (R)) 16c from the viewpoint of carrier characteristics, that is, the recombination balance of holes and electrons.
  • the vapor deposition film 16 including the blue light emitting film (EML (B)) 16b and the red light emitting film (EML (R)) 16c is deposited so that the red light emitting film (EML (R)) 16c is the lower layer.
  • the vapor deposition film 16 including the blue light emitting film (EML (B)) 16b and the red light emitting film (EML (R)) 16c is deposited so that the blue light emitting film (EML (B)) 16b is an upper layer.
  • the thickness of the IZO films 13b and 13c changes.
  • the blue light emitting film is removed by irradiating the deposited film 16 including the blue light emitting film (EML (B)) 16b and the red light emitting film (EML (R)) 16c other than the R pixel and the B pixel with a laser beam.
  • the vapor deposition film removing step including the red light emitting film (S6 in FIG. 6) will be described.
  • laser light is irradiated through a mask 17 having a light shielding portion 17a and an opening portion 17b.
  • the light shielding portion 17a of the mask 17 is formed by laminating the R pixel portion and the B pixel portion of the TFT substrate 10, that is, on the region where the anode electrode 2 and the IZO film 13b are laminated, and the anode electrode 2 and the IZO film 13c.
  • the opening 17b of the mask 17 is disposed in a region other than the R pixel portion and the B pixel portion of the TFT substrate 10. Accordingly, the entire portion of the TFT substrate 10 other than the R pixel portion and the B pixel portion is irradiated with laser light.
  • the vapor deposition film 16 including the blue light emitting film (EML (B)) 16b and the red light emitting film (EML (R)) 16c is an organic material
  • the G pixel portion of the TFT substrate 10 and between the pixels are heated by laser light.
  • the deposited film 16 including the blue light-emitting film (EML (B)) 16b and the red light-emitting film (EML (R)) 16c is selectively removed.
  • the vapor deposition film 14 including the green light emitting film (EML (G)) 14b remains on the G pixel portion of the TFT substrate 10, and the blue light emitting film (EML (B)) is formed on the R pixel portion and the B pixel portion of the TFT substrate 10.
  • 16b and a red light emitting film (EML (R)) 16c is an organic material
  • the light shielding portion 17a of the mask 17 is disposed on the R pixel and the B pixel of the TFT substrate 10, blue light emission in the R pixel and the B pixel is achieved. Since the vapor deposition film 16 including the film (EML (B)) 16b and the red light emitting film (EML (R)) 16c is not irradiated with the laser beam, the laser beam is not damaged.
  • the electron transport film (ETL) 14c includes the blue light emitting film and the red light emitting film. It is assumed that the laser beam used in the vapor deposition film removal step including it is a relatively long pulse laser beam used in the vapor deposition film removal step including the green light-emitting film.
  • the blue light emitting film (EML (B)) 16b and the red light emitting film (EML (R)) 16c formed on the vapor deposition film 14 including the green light emitting film (EML (G)) 14b are provided.
  • the deposited film 16 is removed by laser light irradiation, but heat generated in this step can be generated in the green light emitting film (EML (G)) 14b and the hole injection film / hole transport film (HIL / HTL) 14a. This is so as not to affect as much as possible. In addition, the process characteristics of patterning using heat generated by laser light irradiation also tend to cause variations (such as damage during patterning) in the film thickness of the electron transport film (ETL) 14c of the G pixel.
  • the film thickness of the electron transport film (ETL) 14c is preferably a thick structure in which color change does not easily occur. As the film thickness of the electron transport film (ETL) 14c increases, as a result, the film thickness of the entire deposited film 14 including the green light emitting film (EML (G)) 14b also increases.
  • the remaining rate of the film against the heat generated by the irradiation of the laser light of the electron transport film (ETL) 14c of the G pixel is determined by the laser light of the electron transport film (ETL) 16d of the R pixel and B pixel.
  • the electron transport film (ETL) of the G pixel, the R pixel, and the B pixel is formed of the same material so as to be higher than the remaining rate of the film against the heat generated by irradiation, and the film thickness of the electron transport film (ETL) 14c of the G pixel. was formed thicker than the film thickness of the electron transport film (ETL) 16d of the R pixel and the B pixel.
  • a very short time pulse for example, a very short time pulse of about Femto Second (10 ⁇ 15 ) to Pico Second (10 ⁇ 12 )
  • ETL electron transport film
  • the vapor deposition film removing step including the blue light emitting film and the red light emitting film is also preferably performed in a vacuum atmosphere or an atmosphere in which moisture and oxygen are less than 10 ppm.
  • an electron injection film (not shown) and a cathode electrode 8 were sequentially formed on the entire surface of the TFT substrate 10 and then patterned. Then, the organic EL display device 19 in which a plurality of organic EL elements were provided on the TFT substrate 10 was completed by sealing the entire TFT substrate 10 for each pixel.
  • the remaining rate of the film with respect to heat generated by the irradiation of the laser light of the electron transport film (ETL) 14c of the G pixel is expressed as the electron transport film (ETL) of the R pixel and the B pixel.
  • the electron transport of the G pixel As an example of making the remaining rate of the film to the heat generated by the laser beam irradiation of 16d higher than the electron transport film (ETL) of the G pixel, the R pixel, and the B pixel made of the same material, the electron transport of the G pixel
  • the film thickness of the film (ETL) 14c is formed thicker than the film thickness of the electron transport film (ETL) 16d of the R pixel and the B pixel
  • the residual ratio of the film to the heat generated by the laser beam irradiation of the film (ETL) is determined by the heat generated by the laser beam irradiation of the electron transport film (ETL) of the R pixel and the B pixel. To higher than the remaining rate, it may be as follows.
  • At least a part of the electron transport film (ETL) 14c of the G pixel illustrated in FIG. 5 includes at least one of an inorganic material, an inorganic metal oxide, and a crystalline organic material. It may be contained more than the transport film (ETL) 16d.
  • a very short time pulse for example, a very short time pulse of about Femto Second (10 ⁇ 15 ) to Pico Second (10 ⁇ 12 )
  • ETL electron transport film
  • An inorganic material or an inorganic metal oxide (for example, an inorganic metal oxide having a low work function (an alkali metal oxide of about 3 eV, an alkaline earth metal oxide, or an oxidation thereof) is applied to the electron transport film (ETL) 14c of the G pixel.
  • ETL electron transport film
  • Compound oxides) and crystalline organic materials such as organic materials that have a low glass transition, such as phenanthroline-based materials, and easily recrystallize
  • an electron transport film (ETL) Since the film remaining ratio and heat resistance against heat generated by the irradiation of the laser beam 14c can be improved, the influence of the heat generated by the laser beam irradiation on the lower layer can be suppressed.
  • the crystalline organic material is a material that is crystallized even in an organic material and has a high film density.
  • an organic material having a low glass transition point for example, a glass transition point of less than 120 ° C.
  • crystallization of an organic material having a low glass transition point occurs due to heat generated by laser light irradiation.
  • heat absorption occurs at this time, the influence of heat generated by laser light irradiation on the lower layer can be suppressed.
  • the electron transport film (ETL) 14c of the G pixel is formed to have a film thickness equal to or less than the film thickness of the electron transport film (ETL) 16d of the R pixel and the B pixel, and the electron transport film of the G pixel is formed.
  • the (ETL) 14c may contain at least one of an inorganic material, an inorganic metal oxide, and a crystalline organic material more than the electron transport film (ETL) 16d of the R pixel and the B pixel.
  • FIG. 9 is a diagram showing a schematic configuration of an organic EL display device 23 having a color filter.
  • the blue light emitting film (EML (B)) 16b and the red light emitting film (EML (R)) 16c are formed in common in the R pixel and the B pixel, the blue light emitting film (EML (B) ))
  • the red peak wavelength (600 nm) and the blue peak wavelength (450 nm) are nearly 1.5 times, and color mixing tends to occur.
  • the blue color filter 21 and the red color filter 22 are provided at positions opposite to the B pixel and the R pixel in the glass 20 used in the sealing process. Is preferably provided.
  • the blue color filter 21 and the red color filter 22 are provided on the glass 20 has been described as an example.
  • the present invention is not limited to this, and the path through which red light is emitted from the R pixel.
  • a red color filter 22 having a higher transmittance in the wavelength region of red light than that in the other wavelength regions is provided above, and the transmittance in the wavelength region of blue light is on the path from which the blue light is emitted from the B pixel. What is necessary is just to provide the blue color filter 21 higher than the transmittance
  • the vapor deposition film 34 including the red light emitting film (EML (R)) 34b is first formed on the R pixel
  • the blue light emitting film (EML (B)) 36b is formed on the G pixel and the B pixel.
  • the second embodiment is different from the first and second embodiments in that the vapor deposition film 36 including the green light emitting film (EML (G)) 36c is formed, and the others are as described in the first and second embodiments.
  • EML (G) green light emitting film
  • FIG. 10 is a diagram showing a schematic configuration of the organic EL display device 39.
  • the anode electrode 2 reflection electrode
  • the IZO film 33a hole injection film / hole transport film (HIL / HTL) 34a
  • the red light emitting film (EML (R )) 34b an electron transport film (ETL) 34c
  • an electron injection film not shown
  • a cathode electrode 8 semi-transmissive reflective electrode
  • the electron transport film (ETL) 34c is made of the same material as the electron transport film (ETL) 36d in the G pixel and the B pixel, and is thicker than the electron transport film (ETL) 36d.
  • the anode electrode 2 (reflecting electrode), the IZO film 33b, the hole injection film / hole transport film (HIL / HTL) 36a, the blue light emitting film (EML (B)) 36b, A green light-emitting film (EML (G)) 36c, an electron transport film (ETL) 36d, an electron injection film (not shown), and a cathode electrode 8 (semi-transmissive reflective electrode) are sequentially stacked.
  • the anode electrode 2 (reflection electrode), the IZO film 33c, the hole injection film / hole transport film (HIL / HTL) 36a, the blue light emitting film (EML (B)) 36b, A green light-emitting film (EML (G)) 36c, an electron transport film (ETL) 36d, an electron injection film (not shown), and a cathode electrode 8 (semi-transmissive reflective electrode) are sequentially stacked.
  • FIG. 11 is a diagram for explaining a manufacturing process of the organic EL display device 39 shown in FIG.
  • FIG. 12A to 12D are diagrams for explaining a process of forming a vapor deposition film on the R pixel of the organic EL display device 39.
  • FIG. 12A to 12D are diagrams for explaining a process of forming a vapor deposition film on the R pixel of the organic EL display device 39.
  • FIGS. 13A to 13D show an example of a process for forming a deposited film on the G pixel and the B pixel of the organic EL display device 39, which is a subsequent process of the process shown in FIG. 12D.
  • FIG. 13A to 13D show an example of a process for forming a deposited film on the G pixel and the B pixel of the organic EL display device 39, which is a subsequent process of the process shown in FIG. 12D.
  • an electrode formation process (S1 in FIG. 11) in which the anode electrode 2 is patterned on each pixel and provided on the TFT substrate 30 will be described.
  • the anode electrode 2 electrically connected to the drain electrode (or source electrode) of the TFT element provided for each pixel (R pixel, G pixel, B pixel).
  • R pixel, G pixel, B pixel was patterned on each pixel and provided on the TFT substrate 30.
  • a transparent conductive film forming step (S2 in FIG. 11) for forming a transparent conductive film (also referred to as a conductive light transmission film) on the anode electrode 2 by patterning for each pixel will be described.
  • the above-described electrode formation step (S1 in FIG. 11) and the transparent conductive film formation step (S2 in FIG. 11) are also referred to as an anode formation step.
  • IZO (IndiuminZinc Oxide) films 33a, 33b, and 33c which are transparent conductive films, are formed on the anode electrode 2 by patterning.
  • the IZO films 33a, 33b, and 33c are formed with a predetermined film thickness for each pixel (R pixel, G pixel, and B pixel) in consideration of the light interference effect in each pixel (R pixel, G pixel, and B pixel). Is done.
  • HIL / HTL hole injection film / hole transport film
  • EML (R) red light emitting film
  • ETL electron transport film
  • a vapor deposition film 34 including a red light emitting film (EML (R)) 34 b was formed on the entire surface of the TFT substrate 30.
  • EML (R) red light emitting film
  • the electron carrying film (ETL) 34c was formed thick considering the post process.
  • the vapor deposition film 34 including the red light-emitting film (EML (R)) 34b other than the R pixel is irradiated with laser light, and the vapor deposition film 34 including the red light-emitting film (EML (R)) 34b other than the R pixel is formed.
  • the vapor deposition film removing step (S4 in FIG. 11) including the red light emitting film to be removed will be described.
  • laser light is irradiated through a mask 35 having a light shielding portion 35a and an opening portion 35b.
  • the light shielding portion 35 a of the mask 35 is disposed on the R pixel portion of the TFT substrate 30, that is, on the region where the anode electrode 2 and the IZO film 33 a are laminated, and the opening 35 b of the mask 35 is formed on the R substrate portion of the TFT substrate 30. Arranged outside the pixel portion. Therefore, the entire portion of the TFT substrate 30 other than the R pixel portion is irradiated with laser light.
  • the vapor deposition film 34 including the red light emitting film (EML (R)) 34b is an organic material, and the IZO films 33b and 33c are inorganic materials. Therefore, by heating with laser light, the IZO films 33b and 33c are heated on the IZO films 33b and 33c and between the pixels.
  • the deposited film 34 including the formed red light emitting film (EML (R)) 34b is selectively removed, and as shown in FIG. 12D, the red light emitting film (EML (R) only for the R pixel. )) It can be patterned to leave the deposited film 34 including 34b.
  • the red light emitting film (EML (R)) of the R pixel is arranged.
  • EML (R) red light emitting film
  • the vapor deposition film removing step including the red light emitting film is preferably performed in a vacuum atmosphere or in an atmosphere where moisture and oxygen are as low as less than 10 ppm, for example.
  • the laser beam used in the removal process of the deposited film including the red light emitting film removes the deposited film including the light emitting film that does not have the deposited film including the light emitting film that needs to be protected in the lower layer by heating with the laser beam. Therefore, it is not necessary to consider the suppression of heat conduction to other films by this laser beam. Therefore, an extremely short time pulse (for example, Femto Second (10 ⁇ 15 ) to Pico Second (10 It is not necessary to use a laser beam with an extremely short pulse of about -12 ). For example, a laser beam with a relatively long pulse can be used. Therefore, in the present embodiment, in consideration of shortening the process time, the deposition film removing process including the red light emitting film uses a laser beam having a relatively long pulse, but the present invention is not limited thereto. .
  • a hole injection film / hole transport film (HIL / HTL) 36a, a blue light emitting film (EML (B)) 36b, and a green light emitting film (EML (G)) 36c are formed on the entire surface of the TFT substrate 30.
  • the vapor deposition film forming step including the blue light emitting film and the green light emitting film (S5 in FIG. 11) for sequentially depositing the electron transport film (ETL) 36d will be described.
  • a vapor deposition film 36 including a blue light emitting film (EML (B)) 36b and a green light emitting film (EML (G)) 36c is formed on the entire surface of the TFT substrate 30. .
  • the blue light emitting film (EML (B)) 36b and the green light emitting film (EML (G)) 36c are formed in common in the G pixel and the B pixel.
  • the blue light emitting film (EML (B)) 36b is the lower layer and the green light emitting film (EML (G)) 36c from the viewpoint of carrier characteristics, that is, the recombination balance of holes and electrons.
  • the vapor-deposited film 36 including the blue light-emitting film (EML (B)) 36b and the green light-emitting film 36c was vapor-deposited such that the green light-emitting film (EML (G)) 36c was the lower layer and the blue light-emitting film (
  • the vapor deposition film 36 including the blue light emitting film (EML (B)) 36b and the green light emitting film (EML (G)) 36c may be deposited so that the EML (B)) 36b is an upper layer. It should be noted that the film thickness of the IZO films 33b and 33c changes.
  • the blue light emitting film is removed by irradiating the vapor-deposited film 36 including the blue light emitting film (EML (B)) 36b and the green light emitting film (EML (G)) 36c other than the G pixel and the B pixel with laser light.
  • the vapor deposition film removing step (S6 in FIG. 11) including the green light emitting film will be described.
  • laser light is irradiated through a mask 37 having a light shielding portion 37a and an opening portion 37b.
  • the light shielding portion 37a of the mask 37 is formed by laminating the G pixel portion and the B pixel portion of the TFT substrate 30, that is, on the region where the anode electrode 2 and the IZO film 33b are laminated, and the anode electrode 2 and the IZO film 33c.
  • the opening 37b of the mask 37 is disposed in a region other than the G pixel portion and the B pixel portion of the TFT substrate 30. Therefore, the entire portion of the TFT substrate 30 other than the G pixel portion and the B pixel portion is irradiated with laser light.
  • the vapor deposition film 36 including the blue light emitting film (EML (B)) 36b and the green light emitting film (EML (G)) 36c is an organic material
  • the R pixel portion of the TFT substrate 30 and between the pixels are heated by laser light.
  • the deposited film 36 including the blue light emitting film (EML (B)) 36b and the green light emitting film (EML (G)) 36c is selectively removed.
  • the deposited film 34 including the red light emitting film (EML (R)) 34b remains on the R pixel portion of the TFT substrate 30, and the blue light emitting film (EML (B)) is formed on the G pixel portion and the B pixel portion of the TFT substrate 30.
  • the deposited film 36b and the green light-emitting film (EML (G)) 36c the deposited film 36 can be patterned so as to remain.
  • the light shielding portion 37a of the mask 37 is disposed on the G pixel and the B pixel of the TFT substrate 30, blue light emission in the G pixel and the B pixel. Since the vapor deposition film 36 including the film (EML (B)) 36b and the green light emitting film (EML (G)) 36c is not irradiated with laser light, the laser light is not damaged.
  • the electron transport film (ETL) 34c has the blue light emitting film and the green light emitting film.
  • the laser beam used in the vapor deposition film removal step including the film is formed thicker assuming that the laser beam used in the vapor deposition film removal step including the red light emitting film is a relatively long-time pulse laser beam.
  • the blue light emitting film (EML (B)) 36b and the green light emitting film (EML (G)) 36c formed on the vapor deposition film 34 including the red light emitting film (EML (R)) 34b are provided.
  • the deposited film 36 is removed by laser light irradiation, but heat generated in this step can be generated in the red light emitting film (EML (R)) 34b and the hole injection film / hole transport film (HIL / HTL) 34a. This is so as not to affect as much as possible.
  • the process characteristics of patterning using heat generated by laser light irradiation also tend to cause variations (such as damage during patterning) in the thickness of the electron transport film (ETL) 34c of the R pixel.
  • the film thickness of the electron transport film (ETL) 34c is preferably a thick structure in which color change hardly occurs. As the film thickness of the electron transport film (ETL) 34c increases, as a result, the film thickness of the entire deposited film 34 including the red light emitting film (EML (R)) 34b also increases.
  • the remaining rate of the film against the heat generated by the irradiation of the laser light of the electron transport film (ETL) 34c of the R pixel is determined based on the laser light of the electron transport film (ETL) 36d of the G pixel and B pixel.
  • the electron transport film (ETL) of the R pixel, the G pixel, and the B pixel is formed of the same material so as to be higher than the remaining rate of the film against the heat generated by irradiation, and the film thickness of the electron transport film (ETL) 34c of the R pixel. was formed thicker than the film thickness of the electron transport film (ETL) 36d of the G pixel and B pixel.
  • a very short time pulse for example, a very short time pulse of about Femto Second (10 ⁇ 15 ) to Pico Second (10 ⁇ 12 )
  • ETL electron transport film
  • the vapor deposition film removing step including the blue light emitting film and the green light emitting film is also preferably performed in a vacuum atmosphere or an atmosphere in which moisture and oxygen are less than 10 ppm.
  • an electron injection film (not shown) and the cathode electrode 8 were sequentially formed on the entire surface of the TFT substrate 30, and then patterned. Then, the organic EL display device 39 having a plurality of organic EL elements provided on the TFT substrate 30 was completed by sealing the entire TFT substrate 30 for each pixel.
  • the remaining rate of the film with respect to heat generated by the irradiation of the laser light of the electron transport film (ETL) 34c of the R pixel is set as the electron transport film (ETL) of the G pixel and the B pixel.
  • the electron transport films (ETL) of the R pixel, the G pixel, and the B pixel are formed of the same material, and the electron transport of the R pixel
  • the film thickness of the film (ETL) 34c is formed thicker than the film thickness of the electron transport film (ETL) 36d of the G pixel and the B pixel
  • the residual ratio of the film to the heat generated by the laser beam irradiation of the film (ETL) is determined by the heat generated by the laser beam irradiation of the electron transport film (ETL) of the G pixel and the B pixel. To higher than the remaining rate, it may be as follows.
  • At least a part of the electron transport film (ETL) 34c of the R pixel illustrated in FIG. 10 includes at least one of an inorganic material, an inorganic metal oxide, and a crystalline organic material. It may be contained more than the transport film (ETL) 36d.
  • an extremely short time pulse for example, an extremely short time pulse of about Femto Second (10 ⁇ 15 ) to Pico Second (10 ⁇ 12 )
  • ETL electron transport film
  • An electron transport film (ETL) 34c of the R pixel is coated with an inorganic material or an inorganic metal oxide (for example, a low work function inorganic metal oxide (an alkali metal oxide of about ⁇ 3 eV, an alkaline earth metal oxide, or an oxidation thereof) Compound oxides)) and crystalline organic materials (such as organic materials that have a low glass transition, such as phenanthroline-based materials, and easily recrystallize), an electron transport film (ETL) Since the remaining rate and heat resistance of the film with respect to the heat generated by the laser light irradiation of 34c can be improved, the influence of the heat generated by the laser light irradiation on the lower layer can be suppressed.
  • an inorganic material or an inorganic metal oxide for example, a low work function inorganic metal oxide (an alkali metal oxide of about ⁇ 3 eV, an alkaline earth metal oxide, or an oxidation thereof) Compound oxides)
  • crystalline organic materials such as organic
  • the crystalline organic material is a material that is crystallized even in an organic material and has a high film density.
  • an organic material having a low glass transition point for example, a glass transition point of less than 120 ° C.
  • crystallization of an organic material having a low glass transition point occurs due to heat generated by laser light irradiation.
  • heat absorption occurs at this time, the influence of heat generated by laser light irradiation on the lower layer can be suppressed.
  • the electron transport film (ETL) 34c of the R pixel is formed to have a thickness equal to or less than the film thickness of the electron transport film (ETL) 36d of the G pixel and the B pixel, and the electron transport film of the R pixel is formed.
  • (ETL) 34e may contain at least one of an inorganic material, an inorganic metal oxide, and a crystalline organic material more than the electron transport film (ETL) 36d of the G pixel and the B pixel.
  • a display device is a display device including a first pixel and a second pixel that emit light having different peak wavelengths, and a reflective electrode and a transflective electrode provided in each of the pixels.
  • the first light emitting film is formed on the first pixel
  • the second light emitting film is formed on the second pixel
  • the vapor deposition film formed on the first light emitting film is formed on the second light emitting film.
  • the film is characterized in that the film has a higher residual ratio to the heat generated by the irradiation of the laser beam than the deposited film.
  • the deposited film formed on the first light-emitting film has a higher film remaining ratio to the heat generated by laser light irradiation than the deposited film formed on the second light-emitting film. Since it is a film, for example, in order to improve productivity during the manufacturing process of the display device, the second light emitting film and the second light emitting film are formed on the vapor deposition film formed on the first light emitting film. Even when the vapor deposition film formed on the light emitting film is formed and the second light emitting film and the vapor deposited film formed on the second light emitting film are removed by heating with laser light, the first light emitting film is formed.
  • a display device that can suppress the influence on the light emitting film and the deposited film formed below the first light emitting film, has high productivity, and can suppress the color shift of the light emitting element and the deterioration of the light emitting element characteristics can be realized.
  • the display device is the display device according to aspect 1, in which the third pixel that emits light having a peak wavelength different from that of the first pixel and the second pixel, and the reflective electrode provided in the third pixel And the transflective electrode, wherein the second light emitting film and the third light emitting film are laminated on each of the second pixel and the third pixel, and the reflective electrode of the second pixel
  • the distance between the second light emitting film and the distance between the reflective electrode of the third pixel and the third light emitting film is set so that light having the peak wavelength of the pixel can be extracted from the transflective electrode.
  • the vapor deposition film formed on the first light-emitting film is formed on the second light-emitting film which is an upper layer in the laminated film of the second light-emitting film and the third light-emitting film. Against the heat generated by laser light irradiation. It is preferable that the film residual ratio is high membrane.
  • each of the second pixel and the third pixel is provided. Since the second light-emitting film and the third light-emitting film can be patterned in a single process, productivity is high and adverse effects on other films during patterning can be suppressed.
  • both the second light emitting film and the third light emitting film are formed in each of the second and third pixels.
  • the distance between the second light-emitting film and the distance between the reflective electrode of the third pixel and the third light-emitting film are set such that light having the peak wavelength of the pixel can be extracted from the transflective electrode. Therefore, light having a predetermined peak wavelength can be extracted from the corresponding pixel.
  • the vapor deposition film formed on the first light emitting film is a vapor deposition formed on the second light emitting film which is an upper layer in the laminated film of the second light emitting film and the third light emitting film. Since the film has a higher residual ratio to the heat generated by laser light irradiation than the film, for example, when the film on the deposited film formed on the first light emitting film is removed by heating with the laser light However, it is possible to suppress the influence on the first light emitting film and the vapor deposition film formed below the first light emitting film, and to realize a display device capable of suppressing the color shift of the light emitting element and the deterioration of the light emitting element characteristics.
  • the vapor deposition film formed on the first light emitting film is formed thicker than the vapor deposition film formed on the second light emitting film. May be.
  • the vapor deposition film formed on the first light emitting film is formed thicker than the vapor deposition film formed on the second light emitting film, for example, by heating with laser light. Even when the film on the vapor deposition film formed on the first light emitting film is removed, the influence on the first light emitting film and the vapor deposition film formed on the first light emitting film can be suppressed, A display device capable of suppressing color shift of the light-emitting element and deterioration of the light-emitting element characteristics can be realized.
  • the display device according to aspect 4 of the present invention is the display device according to any one of aspects 1 to 3, wherein the vapor deposition film formed on the first light-emitting film includes an inorganic material, an inorganic metal oxide, and a crystalline organic material. At least one of them may be included more than the vapor deposition film formed on the second light emitting film.
  • At least one of an inorganic material, an inorganic metal oxide, and a crystalline organic material is formed on the second light emitting film in the deposited film formed on the first light emitting film. Since it is contained more than the vapor deposition film, for example, even when the film on the vapor deposition film formed on the first light emission film is removed by heating with a laser beam, the first light emission film and the first light emission film are removed. Accordingly, it is possible to realize a display device that can suppress the influence on the deposited film formed on the light emitting film 1 and suppress the color shift of the light emitting element and the deterioration of the light emitting element characteristics.
  • the distance between the reflective electrode of the second pixel and the second light emitting film and the reflective electrode and the third light emitting film of the third pixel are described. Is a 1/4 ⁇ (2N ⁇ 1) of the peak wavelength of the pixel, and N is preferably a natural number.
  • the first light emitting film is a blue light emitting film
  • the second light emitting film is one of a green light emitting film and a red light emitting film.
  • the third light emitting film may be the other of the green light emitting film and the red light emitting film.
  • the green light emitting film and the red light emitting film are formed in common in the second pixel and the third pixel.
  • the dopant is a phosphorescent material, and the host material can be easily shared. This can be dealt with by switching only the dopant in the vapor deposition process.
  • the first light emitting film is a green light emitting film
  • the second light emitting film is one of a red light emitting film and a blue light emitting film.
  • the third light emitting film may be the other of the red light emitting film and the blue light emitting film.
  • the first light emitting film is a red light emitting film
  • the second light emitting film is one of a green light emitting film and a blue light emitting film.
  • the third light emitting film may be the other of the green light emitting film and the blue light emitting film.
  • the display device is the display device according to any one of the aspects 5 to 8, in which each of the light beams having the peak wavelength of the corresponding pixel is emitted from the second pixel and the third pixel. It is preferable that a color filter is provided in which the transmittance in the wavelength region of the peak wavelength light of the corresponding pixel is higher than the transmittance in other wavelength regions.
  • a manufacturing method of a display device includes a first pixel and a second pixel that emit light of different peak wavelengths provided on a substrate, a light-emitting film, a reflective electrode, and A semi-transparent reflective electrode, and a conductive device that adjusts a distance between the light-emitting film and the reflective electrode so that light having the peak wavelength of the pixel can be extracted from the transflective electrode.
  • Removing the second vapor deposition film including the film, and in the first vapor deposition film forming step, the vapor deposition film formed on the first light emitting film is the second vapor deposition film forming step.
  • the film is characterized in that the film has a higher residual ratio to the heat generated by laser light irradiation than the deposited film formed on the second light emitting film.
  • the vapor deposition film formed on the first light emitting film is formed on the second light emitting film in the second vapor deposition film forming step. Since the remaining ratio of the film to the heat generated by the laser beam irradiation is higher than that of the deposited film, the second light emitting film including the second light emitting film formed other than the second pixel using the laser beam.
  • the step of removing the deposited film when the film on the deposited film formed on the first light emitting film is removed by heating with a laser beam, the first light emitting film and the first light emitting are also removed.
  • the manufacturing method of the display apparatus which can suppress the influence on the vapor deposition film formed under a film
  • the third pixel provided on the substrate emits light having a peak wavelength different from that of the first pixel and the second pixel.
  • a reflective electrode and a semi-transmissive reflective electrode provided in the third pixel, and the second vapor deposition film forming step includes a second film including a stacked film of the second light emitting film and the third light emitting film.
  • the second vapor-deposited film including the second light-emitting film and the laminated film of the third light-emitting film formed in a portion other than the second pixel and the third pixel is removed using laser light, and the conductive film In the light transmitting film forming process, the peak of the corresponding pixel
  • the distance between the reflective electrode of the second pixel and the second light emitting film and the reflective electrode of the third pixel and the third light emitting film so that long light can be extracted from the transflective electrode.
  • a conductive light-transmitting film for adjusting the distance is formed with a predetermined film thickness, and in the first vapor deposition film forming step, the vapor deposition film formed on the first light emitting film is formed as the second vapor deposition film.
  • the film remains against heat generated by laser light irradiation from the vapor deposition film formed on the second light-emitting film which is the upper layer in the laminated film of the second light-emitting film and the third light-emitting film.
  • a film having a high rate is preferable.
  • the first vapor deposition film formation step and the second vapor deposition film formation step are performed twice, the first vapor deposition film removal step, and the second vapor deposition film removal step.
  • the deposition films including the light emitting films of the respective colors can be patterned. Therefore, compared to the conventional method in which each film including the light emitting film of each color needs to be deposited for each color pixel, the productivity is high and the adverse effect on other films during patterning can be suppressed.
  • the vapor deposition film including the light emitting film of each color is patterned using the laser beam, that is, the vapor deposition film including the light emitting film of each color is partially removed and patterned by heating with the laser beam. . Therefore, it is not necessary to perform the resist forming process and the resist peeling process as many as three times as in the prior art, so that productivity can be improved and adverse effects on other films that may occur during photolithography of the resist. Can be suppressed.
  • the vapor deposition film formed on the first light emitting film is formed on the second light emitting film which is an upper layer in the second vapor deposition film forming step. Since the film has a higher residual ratio to the heat generated by laser light irradiation than the deposited film, for example, the film on the deposited film formed on the first light emitting film is removed by heating with the laser light. Even in this case, it is possible to suppress the influence on the first light-emitting film and the deposited film formed below the first light-emitting film, and to manufacture a display device capable of suppressing the color shift of the light-emitting element and the deterioration of the light-emitting element characteristics. The method can be realized.
  • the vapor deposition film formed on the first light emitting film is the second vapor deposition film.
  • the deposited film may be formed thicker than the deposited film formed on the second light emitting film.
  • the vapor deposition film formed on the first light emitting film is formed thicker than the vapor deposition film formed on the second light emitting film, for example, by heating with a laser beam, even when the film on the vapor deposition film formed on the first light emitting film is removed, the influence on the first light emitting film and the vapor deposition film formed on the first light emitting film can be suppressed, and light emission can be achieved. It is possible to realize a method for manufacturing a display device capable of suppressing color shift of elements and deterioration of light emitting element characteristics.
  • the method for manufacturing a display device according to the thirteenth aspect of the present invention is the display device according to any one of the tenth to twelfth aspects, wherein the vapor deposition film formed on the first light emitting film in the first vapor deposition film forming step is In the vapor deposition film forming step 2, at least one of an inorganic material, an inorganic metal oxide, and a crystalline organic material may be included more than the vapor deposition film formed on the second light emitting film.
  • At least one of an inorganic material, an inorganic metal oxide, and a crystalline organic material is formed on the second light emitting film in the deposited film formed on the first light emitting film.
  • the first light emitting film and the first light emitting film are contained.
  • the method for manufacturing a display device according to the fourteenth aspect of the present invention is the method according to any one of the tenth to thirteenth aspects, wherein the first vapor deposition film is removed or the second vapor deposition film is removed. It is preferable to use a mask that partially shields the laser beam.
  • the mask since the mask is used, it is possible to perform patterning with high accuracy by the laser beam and to block the laser beam at a portion where the mask is not necessary, thereby suppressing adverse effects on other films.
  • the step of removing the first vapor deposition film or the step of removing the second vapor deposition film is performed in a vacuum atmosphere. It is preferable that the reaction is carried out under an atmosphere where moisture and oxygen are less than 10 ppm.
  • an extremely short time of 10 ⁇ 15 seconds to 10 ⁇ 12 seconds is provided in the step of removing the second deposited film. It is preferable to use pulsed laser light.
  • the thickness of the conductive light transmissive film is the same as that of the reflective electrode of the second pixel and the thickness of the second pixel.
  • the distance between the second light emitting film and the distance between the reflective electrode of the third pixel and the third light emitting film is 1 ⁇ 4 ⁇ (2N ⁇ 1) of the peak wavelength of the corresponding pixel (where N is a natural number). ) Is preferably formed.
  • the first light emitting film is a blue light emitting film
  • the second light emitting film is a green light emitting film or a red light emitting film. It is either one, and the third light emitting film may be the other of the green light emitting film and the red light emitting film.
  • the red light emitting film and the blue light emitting film are formed in common in the second pixel and the third pixel.
  • the dopant is a phosphorescent material, and the host material can be easily shared. This can be dealt with by switching only the dopant in the vapor deposition process.
  • the first light emitting film is a green light emitting film
  • the second light emitting film is a red light emitting film or a blue light emitting film. It is either one, and the third light emitting film may be the other of the red light emitting film and the blue light emitting film.
  • the first light emitting film is a red light emitting film
  • the second light emitting film is a green light emitting film or a blue light emitting film.
  • the third light emitting film may be the other of the green light emitting film and the blue light emitting film.
  • the method for manufacturing a display device according to aspect 21 of the present invention is the method for manufacturing a display device according to any one of the aspects 17 to 20, wherein each of the second pixel and the third pixel on the path from which the peak wavelength light is emitted is output. It is preferable that the method further includes a step of providing a color filter in which the transmittance of the peak wavelength light of the corresponding pixel is higher than the transmittance of other wavelength regions.
  • the present invention can be used for a display device, in particular, an organic EL display device and a manufacturing method thereof.
  • TFT substrate 2 Anode electrode (reflection electrode) 3a IZO film (conductive light transmission film) 3b IZO film (conductive light transmission film) 3c IZO film (conductive light transmission film) 4 Deposition film including blue light-emitting film 4a Hole injection film / hole transport film for B pixel 4b Blue light-emitting film 4c Electron transport film for B pixel 5 Mask 5a Light-shielding part 5b Opening 6 Including green light-emitting film and red light-emitting film Evaporated film 6a Hole injection film / hole transport film for G pixel and R pixel 6b Green light emitting film 6c Red light emitting film 6d Electron transport film for G pixel and R pixel 7 Mask 7a Light shielding part 7b Opening part 8 Cathode electrode (semi-transmissive) Reflective electrode) 9 Organic EL display device (display device) 10 TFT substrate 13a IZO film (conductive light transmission film) 13b IZO film (conductive light transmission film) 13c IZ

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  • Electroluminescent Light Sources (AREA)

Abstract

Le but de l'invention est de pourvoir à un dispositif d'affichage à grande facilité de fabrication, apte à supprimer une variation chromatique dans des éléments électroluminescents et une détérioration des propriétés d'éléments électroluminescents. Un film de transport d'électrons (4c) pour pixels bleus (B), formé sur un film d'émission de lumière bleue (4b), est formé épais à l'aide d'un film de transport d'électrons (6d) pour pixels verts (G) et pixels rouges (R), formé sur un film d'émission de lumière verte (6b) et un film d'émission de lumière rouge (6c), de manière que le film de transport d'électrons (4c) ait un taux résiduel élevé par rapport à la chaleur générée par l'exposition à de la lumière laser.
PCT/JP2016/070603 2015-07-14 2016-07-12 Dispositif d'affichage et procédé de fabrication de dispositif d'affichage WO2017010488A1 (fr)

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US11683972B2 (en) * 2020-01-29 2023-06-20 Kyonggi University Industry & Academia Cooperation Foundation Emitting device manufacturing method using laser shaving and manufacturing equipment for the same

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