WO2017010025A1 - Module laser - Google Patents

Module laser Download PDF

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Publication number
WO2017010025A1
WO2017010025A1 PCT/JP2015/084673 JP2015084673W WO2017010025A1 WO 2017010025 A1 WO2017010025 A1 WO 2017010025A1 JP 2015084673 W JP2015084673 W JP 2015084673W WO 2017010025 A1 WO2017010025 A1 WO 2017010025A1
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WO
WIPO (PCT)
Prior art keywords
laser
block
solder
cap
stem
Prior art date
Application number
PCT/JP2015/084673
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English (en)
Japanese (ja)
Inventor
矢部　実透
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Publication of WO2017010025A1 publication Critical patent/WO2017010025A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30

Definitions

  • the present invention relates to a laser module on which a semiconductor laser element is mounted.
  • Patent Document 1 As an example of a configuration of a conventional laser module and an assembling method thereof, a technique disclosed in Patent Document 1 has been proposed.
  • a plurality of lasers are respectively fixed to a block by Au—Sn solder via submounts.
  • the block is obtained by applying Au / Ni plating to Cu, and the melting point of Au—Sn solder is 280 ° C.
  • the position of each block is adjusted, and the block is fixed to a stem, which is a single substrate subjected to Au / Ni plating, with Pb—Sn solder having a melting point of 183 ° C.
  • a cap with a window at the end is welded to the base body in an N 2 atmosphere to complete a laser module in which the central portions such as the laser, the submount and the block are hermetically sealed.
  • the present invention has been made in view of the above, and an object thereof is to obtain a highly reliable, small and inexpensive laser module.
  • the present invention includes a laser element that emits laser light, a block on which the laser element is mounted, and a base body on which the block is fixed to the main surface via solder. , And a laser mark for restricting the spread of the solder is provided outside the block on the main surface.
  • FIG. 6 is a perspective view showing a state in which the block-ASSY according to the first embodiment is fixed to the stem.
  • the perspective view which shows the state by which the collimator lens array concerning Embodiment 1 was fixed.
  • Assembly flow diagram of laser module according to the first embodiment Top view of the stem explaining the laser mark concerning Embodiment 1 in detail
  • FIG. 6 is a top view showing a state in which the block-ASSY according to the first embodiment is fixed to the stem. Sectional drawing at the time of condensing using multiple laser modules concerning Embodiment 1
  • FIG. 1 is an exploded view of the laser module 12 according to the first embodiment of the present invention.
  • FIG. 2 is a perspective view showing a state in which the block-ASSY (assembly) 6 according to the first exemplary embodiment is fixed to the stem 7.
  • FIG. 3 is a perspective view showing a state in which the collimator lens array 9 according to the first exemplary embodiment is fixed.
  • FIG. 4 is a perspective view of the laser module 12 to which the cap 11 according to the first embodiment is attached.
  • FIG. 5 is a sectional view taken along one-dot chain line AA in FIG.
  • FIG. 6 is an assembly flow diagram of the laser module 12 according to the first embodiment.
  • a semiconductor laser array 1 which is a laser element that emits a laser beam includes a submount substrate 2 in which AuSn solder having a melting temperature of 278 ° C. is deposited on both sides using SiC, which is a material having excellent insulating properties.
  • the block 3 is obtained by integrally soldering to a block 3 in which nickel having a good thermal conductivity is plated with gold and gold. That is, as shown in FIG. 6, the semiconductor laser array 1 and the submount substrate 2 are fixed with AuSn solder, and further, they are fixed to the block 3 with AuSn solder.
  • the semiconductor laser array 1 is a multi-emitter laser diode having a plurality of emitters that emit laser light.
  • a plurality of electrode patterns are formed on the submount substrate 2 shown in FIG. 1, and either the positive or negative electrode of the semiconductor laser array 1 is connected to one electrode pattern, and the other electrode is a plurality of wires. 4 is connected to another electrode pattern of the submount substrate 2. That is, as shown in FIG. 6, wire bonding by the wire 4 is performed.
  • two pairs of gold ribbons 5A and 5B are joined and drawn out to each electrode pattern of the submount substrate 2 shown in FIG. That is, as shown in FIG. 6, ribbon joining by the gold ribbons 5A and 5B is performed.
  • the block-ASSY 6 is configured in which a plurality of components including the semiconductor laser array 1, the submount substrate 2, the block 3, the wire 4, and the gold ribbons 5A and 5B are combined.
  • the laser module 12 according to the first embodiment includes two blocks-ASSY6.
  • the stem 7 which is a plate-like substrate is made of a clad material of Fe—Cu—Fe with nickel plating and gold plating applied to the surface in order, and a set of four lead pins 7A and 7B sandwiching the center. Two sets of 8 are fixed by glass sealing.
  • the main surface 7a of the stem 7 is covered with gold plating.
  • the reference hole 7C and the long hole 7D define the dimensions of the stem 7 and serve as a reference when the laser module 12 is incorporated into the apparatus.
  • the main surface 7a of the stem 7 before assembly is serialized with a serial number 7E for traceability management and individual identification by laser marking, and a two-dimensional barcode 7F including the information. A pair of substantially U-shaped lines 7G are written as laser marks.
  • the stem 7 that is the base body can be identified by the serial number 7E or the two-dimensional barcode 7F.
  • the two blocks-ASSY 6 are mounted on the main surface 7a of the stem 7 by being soldered symmetrically so that the respective semiconductor laser arrays 1 face each other.
  • the two blocks-ASSY 6 are the main parts of the stem 7 by the SnAgCu ribbon solder 8 at the same time in a state where a load is applied to the bottom surface perpendicular to the surface on which the semiconductor laser array 1 of each block 3 is fixed. Soldered to the center of the surface 7a. That is, the block-ASSY 6 and the stem 7 are SnAgCu-soldered by the ribbon solder 8 as shown in FIG.
  • each block 3 of each of the two blocks-ASSY 6 and the main surface 7 a of the stem 7 are joined via the ribbon solder 8. Since the ribbon solder 8 is made of SnAgCu, its melting point is lower than that of AuSn solder, and the melting temperature is 219 ° C. The ribbon solder 8 has substantially the same size as the size of the bottom surface that becomes the joining surface of the block 3 and before joining.
  • the ends of the gold ribbons 5A and 5B drawn out from the block-ASSY 6 are ribbon-bonded to the power supply lead pins 7A and 7B, respectively.
  • the semiconductor laser array 1 emits light when power is supplied from the end opposite to the end where the gold ribbons 5A and 5B of the power supply lead pins 7A and 7B are connected.
  • the collimator lens array 9 shown in FIG. 3 is made of glass, and the diverging light, which is the light beam of the laser light emitted from the plurality of emitters of the semiconductor laser array 1, is collimated, that is, converted into parallel light. As shown in FIGS. 3 and 6, the collimator lens array 9 is adhesively fixed by glass tabs 10 that hold the collimator lens array 9.
  • a cylindrical or substantially cylindrical cap 11 made of an Fe—Ni alloy having a glass window 11A that is a window through which laser light emitted from the semiconductor laser array 1 is transmitted.
  • the center is aligned with the center of the stem 7 and joined to the main surface 7a by resistance welding in dry air. Accordingly, the two blocks-ASSY 6 are hermetically sealed inside the cap 11.
  • the laser module 12 is assembled by the process according to the configuration shown in FIGS. 1 to 4 and the assembly flow diagram of FIG. The laser module 12 that emits light 13 is completed.
  • FIG. 7 is a top view of the stem 7 for explaining the laser mark according to the first embodiment in detail.
  • an imaginary line 7 ⁇ / b> H indicated by a two-dot chain line is not actually drawn, but indicates a welding position of the cap 11.
  • the stem 7 is made of iron (Fe) in consideration of the glass sealing property of the power supply lead pins 7A and 7B and the weldability of the cap 11, and the copper (Cu) is sandwiched between them in consideration of thermal conductivity.
  • Fe-Cu-Fe clad material is used, and after nickel plating, the entire surface is gold-plated to improve solder wettability. Accordingly, the main surface 7a of the stem 7 other than the place where the laser mark described below in FIG. 7 is drawn is provided with gold plating.
  • the stem 7 is attached to the jig with reference to the hole 7C and the long hole 7D, and a serial number 7E and its serial number 7E are indicated by laser marking on the outside of the virtual line 7H indicating the welding position of the cap 11 of the main surface 7a.
  • a two-dimensional barcode 7F including information is drawn as a laser mark. Therefore, the serial number 7E and the two-dimensional barcode 7F are located outside the cap 11 on the main surface 7a after the cap 11 is welded.
  • a pair of substantially U-shaped lines 7G are drawn as laser marks inside the virtual line 7H of the main surface 7a. Further, the line 7G is located on the outer periphery of the mounting surface, that is, on the outer periphery of the ribbon solder 8, even in the portion where the mounting surface that is the region on the main surface 7a where the block 3 is actually mounted and the virtual line 7H are closest.
  • the laser marks are provided as a pair of substantially U-shaped laser marks having dimensions that are at least 0.5 mm in length and width.
  • a laser mark can be drawn by simply removing the gold plating on the main surface 7a of the stem 7 by laser irradiation.
  • Gold of gold plating on the main surface 7a of the stem 7 is removed by heat by laser irradiation, and when heating is large, nickel and iron in the lower layer of gold are further oxidized and discolored. Since the gold plating is removed from the portion of the line 7G, the wettability of the solder is lowered as compared with the region where the gold plating exists. Therefore, the solder that melts and spreads outward from the outer periphery of the mounting surface can be reliably dammed by the line 7G to limit the spread of the solder.
  • the serial number 7E, the two-dimensional barcode 7F including the information, and a pair of substantially U-shaped lines 7G are drawn as laser marks on the same main surface 7a of the stem 7 in the same work process. Yes.
  • a pair of substantially U-shaped lines 7G can be drawn with high accuracy.
  • the laser marking enables visual confirmation of the serial number 7E, reading of the two-dimensional barcode 7F by the barcode reader, and inhibition of solder wettability by the line 7G in the same process.
  • a method of joining the block-ASSY 6 and the stem 7 shown in FIG. 2 will be described in detail.
  • a ribbon solder 8 made of SnAgCu having a melting point lower than that of AuSn solder is positioned at a predetermined position of the stem 7 by means such as a jig, and the two blocks-ASSY 6 are gripped by the robot from above.
  • the stem 7 is precisely positioned and heated for a predetermined time so as to reach about 250 ° C. under a predetermined load.
  • the SnAgCu ribbon solder 8 is melted without melting the semiconductor laser array 1 and the submount substrate 2 fixed to the block 3 with AuSn solder.
  • the ribbon solder 8 spreads between the block 3 and the stem 7 and on the surface of the stem 7, and the block 3 and the stem 7 are fixed.
  • FIG. 8 is a perspective view for explaining the spread of solder when there is no line 7G in the first embodiment.
  • FIG. 9 is a top view for explaining the spread of solder when there is no line 7G in the first embodiment. That is, FIG. 8 shows the spread of the ribbon solder 8 after joining when there is no pair of substantially U-shaped lines 7G by laser marking, and FIG. 9 is a top view thereof.
  • the block 3 and the stem 7 have minute variations in the surface state or shape, and the temperature profile on the stem 7 varies greatly due to variations in the contact state caused by these. Further, due to factors such as variations in load applied to the block-ASSY 6 and position adjustment, the manner in which the solder spreads on the stem 7 with good solder wettability varies greatly.
  • FIG. 2 is a perspective view showing a state in which the block-ASSY 6 according to the first embodiment is fixed to the stem 7, and a pair of substantially U-shaped lines that are laser marks by laser marking. The spread of the ribbon solder 8 after joining when 7G is provided on the stem 7 will be described.
  • FIG. 10 is a top view showing a state in which the block-ASSY 6 according to the first exemplary embodiment is fixed to the stem 7. Accordingly, FIG. 10 is a top view of FIG.
  • the stem 7 is provided with a pair of substantially U-shaped lines 7G, the gold plating is removed even if the temperature condition or the load varies. It is possible to easily prevent the ribbon solder 8 from spreading over the substantially U-shaped line 7G. Therefore, there is no bonding failure such as a void in the solder between the block 3 and the stem 7, and the solder can be reliably filled between the block 3 and the stem 7. A module 12 can be provided. Further, since the ribbon solder 8 does not spread out beyond the line 7G from which the gold plating is removed, reliable airtight sealing with the cap 11 becomes possible.
  • two blocks -ASSY 6 are mounted on the main surface 7a of the stem 7 symmetrically with respect to the center of the cylindrical or substantially cylindrical cap 11.
  • the distance between the outer periphery of the cap 11 and the block 3 inevitably approaches.
  • the ribbon solder 8 does not spread over the line 7G, it is not necessary to design the welding position of the cap 11 in consideration of the variation in the protruding position of the solder. As a result, since the welding position of the cap 11 and thus the diameter of the cap 11 can be made small, the small and high-power laser module 12 can be provided at low cost.
  • FIG. 11 is a cross-sectional view of the case where light is collected using a plurality of laser modules 12 according to the first embodiment.
  • This cross-sectional view is a cross-sectional view in the same plane as the cross-section of FIG.
  • FIG. 11 shows an example of a configuration in the case where the collimated light beams 13 converted into parallel light by the collimator lens array 9 of each of the plurality of laser modules 12 are collected together.
  • the light condensed by the condenser lens 14 provided on the plurality of laser modules 12 is taken into the rod 15.
  • one laser module 12 is configured to emit a plurality of collimated light beams 13, and a smaller condenser lens 14 can be adopted as the laser module 12 becomes smaller. Therefore, by applying the laser module 12 according to the first embodiment to an apparatus such as a projector light source, a smaller and cheaper apparatus can be provided.
  • the shape of the line 7G written by the laser marker is described as a pair of substantially U-shapes, but the shape of the line 7G is not limited to this.
  • the line 7G may have a single closed shape as a whole, and may have a rectangular shape that surrounds the entire circumference of the two blocks 3 together.
  • the line 7G may have two separate closed shapes surrounding the two blocks 3, respectively.
  • the shape of the line 7G may be a curve.
  • the shape of the line 7G is a condition that it surrounds each block 3 inside the virtual line 7H indicating the welding position of the cap 11 if the wetting and spreading of the ribbon solder 8 can be blocked.
  • a free shape matching the shape of each block 3 can be selected within a range that satisfies the above.
  • the laser module 12 As described above, according to the laser module 12 according to the first embodiment, not only the range in which the solder spreads by the laser marker is limited, but also reliable so that there is no unjoined portion between the surfaces of the two components. There is an effect of high bonding. In addition, there is an effect that a reliable hermetic sealing is possible. As a result, the block 3 on which the laser element is mounted and the stem 7 as the base are securely soldered, and the highly reliable laser module 12 with good heat dissipation can be obtained. Further, it is possible to mount components in the cap 11 with high density without increasing the number of manufacturing steps for components and assembly, and it is possible to provide a small and high-power laser module 12 at low cost.
  • the configuration described in the above embodiment shows an example of the contents of the present invention, and can be combined with another known technique, and can be combined with other configurations without departing from the gist of the present invention. It is also possible to omit or change the part.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Un module laser 12 est pourvu : d'un élément laser 1 qui émet une lumière laser ; de blocs 3 sur lesquels est monté l'élément laser 1 ; et d'un corps de base 7 sur la surface principale 7a duquel sont fixés les blocs 3 par l'intermédiaire d'une brasure tendre. Des marques de laser 7G qui limitent l'étalement de la brasure tendre sont disposées sur la surface principale 7a vers le côté extérieur des blocs 3.
PCT/JP2015/084673 2015-07-16 2015-12-10 Module laser WO2017010025A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-142478 2015-07-16
JP2015142478A JP2018139237A (ja) 2015-07-16 2015-07-16 レーザモジュール

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WO2017010025A1 true WO2017010025A1 (fr) 2017-01-19

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022259986A1 (fr) * 2021-06-07 2022-12-15 ヌヴォトンテクノロジージャパン株式会社 Dispositif électroluminescent

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7417029B2 (ja) 2018-12-14 2024-01-18 日亜化学工業株式会社 発光装置及びその製造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01241504A (ja) * 1988-03-23 1989-09-26 Hitachi Ltd 複合光デバイスの組立方法
JPH02235384A (ja) * 1989-03-08 1990-09-18 Mitsubishi Electric Corp 半導体発光装置
JPH0312459U (fr) * 1989-06-20 1991-02-07
WO2007024005A1 (fr) * 2005-08-23 2007-03-01 Ddk Ltd. Contact microminiature et son procédé de fabrication, et composant électronique
JP2007173224A (ja) * 2005-11-25 2007-07-05 Om Sangyo Kk 電子部品の製造方法
WO2007099612A1 (fr) * 2006-02-28 2007-09-07 Fujikura Ltd. Module optique bilateral monoconducteur
JP2011155194A (ja) * 2010-01-28 2011-08-11 Mitsubishi Electric Corp 半導体レーザ装置および光ファイバ
JP2012164981A (ja) * 2011-01-24 2012-08-30 Soraa Inc 基板部材上に構成された複数のエミッタを有するレーザーパッケージ
JP2013084672A (ja) * 2011-10-06 2013-05-09 Mitsubishi Electric Corp 多波長半導体レーザ装置及び多波長半導体レーザ装置の製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01241504A (ja) * 1988-03-23 1989-09-26 Hitachi Ltd 複合光デバイスの組立方法
JPH02235384A (ja) * 1989-03-08 1990-09-18 Mitsubishi Electric Corp 半導体発光装置
JPH0312459U (fr) * 1989-06-20 1991-02-07
WO2007024005A1 (fr) * 2005-08-23 2007-03-01 Ddk Ltd. Contact microminiature et son procédé de fabrication, et composant électronique
JP2007173224A (ja) * 2005-11-25 2007-07-05 Om Sangyo Kk 電子部品の製造方法
WO2007099612A1 (fr) * 2006-02-28 2007-09-07 Fujikura Ltd. Module optique bilateral monoconducteur
JP2011155194A (ja) * 2010-01-28 2011-08-11 Mitsubishi Electric Corp 半導体レーザ装置および光ファイバ
JP2012164981A (ja) * 2011-01-24 2012-08-30 Soraa Inc 基板部材上に構成された複数のエミッタを有するレーザーパッケージ
JP2013084672A (ja) * 2011-10-06 2013-05-09 Mitsubishi Electric Corp 多波長半導体レーザ装置及び多波長半導体レーザ装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022259986A1 (fr) * 2021-06-07 2022-12-15 ヌヴォトンテクノロジージャパン株式会社 Dispositif électroluminescent

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