WO2017008370A1 - 阵列彩膜集成式液晶显示面板的制作方法及其结构 - Google Patents

阵列彩膜集成式液晶显示面板的制作方法及其结构 Download PDF

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Publication number
WO2017008370A1
WO2017008370A1 PCT/CN2015/087725 CN2015087725W WO2017008370A1 WO 2017008370 A1 WO2017008370 A1 WO 2017008370A1 CN 2015087725 W CN2015087725 W CN 2015087725W WO 2017008370 A1 WO2017008370 A1 WO 2017008370A1
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Prior art keywords
substrate
layer
liquid crystal
color resist
protective layer
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PCT/CN2015/087725
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English (en)
French (fr)
Inventor
许勇
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/781,588 priority Critical patent/US20170153519A1/en
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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Definitions

  • the present invention relates to the field of liquid crystal display technology, and in particular, to a method and a structure for fabricating an array color film integrated liquid crystal display panel.
  • LCDs liquid crystal displays
  • Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become mainstream in display devices.
  • liquid crystal displays which include a liquid crystal display panel and a backlight module.
  • a liquid crystal display panel is composed of a color filter (CF), a thin film transistor array substrate (TFT Array Substrate), and a liquid crystal layer disposed between the two substrates.
  • the working principle is to control the rotation of the liquid crystal molecules of the liquid crystal layer by applying a driving voltage on the two substrates, and refract the light of the backlight module to generate a picture.
  • CF color filter
  • TFT Array Substrate thin film transistor array substrate
  • the working principle is to control the rotation of the liquid crystal molecules of the liquid crystal layer by applying a driving voltage on the two substrates, and refract the light of the backlight module to generate a picture.
  • a color resistance of a plurality of colors for filtering and a black matrix for shading are provided on one side of the color filter substrate.
  • an array color film integrated liquid crystal display panel is proposed.
  • the color film can be fabricated on the TFT array substrate side (Color Filter On Array, COA), and the black matrix is fabricated on the array substrate side (Black Matrix On). Array, BOA), and the photoresist spacer is fabricated on the side of the array substrate (Photo Spacer On Array).
  • the array color film integrated liquid crystal display panel is integrated on the side of the array substrate because the color film and the black matrix are integrated, which can reduce the alignment deviation, increase the aperture ratio, reduce the parasitic capacitance, and is suitable for forming a curved shape.
  • the existing array color film integrated liquid crystal display panel needs to be opened in the color resist layer during the fabrication process, and is used for electrically connecting the pixel electrode to the source/drain of the TFT, thereby causing a problem in color resistance.
  • the opening on the layer will cause the aperture ratio to decrease.
  • opening the hole in the color resist layer is easy to hide the gas.
  • the liquid crystal display panel encounters high temperature, vibration, or impact, the hidden gas will overflow and form a bubble. (Bubble), occupying the position of the liquid crystal, causing display abnormality.
  • the object of the present invention is to provide an array color film integrated liquid crystal display panel
  • the method realizes the connection between the pixel electrode and the source/drain without increasing the hole on the color resist layer, thereby improving the aperture ratio, avoiding bubbles, improving the display quality of the liquid crystal display panel, and saving the photomask. reduce manufacturing cost.
  • Another object of the present invention is to provide an array color film integrated liquid crystal display panel structure with high aperture ratio, good display quality and low production cost.
  • the present invention provides a method for fabricating an array color film integrated liquid crystal display panel, comprising the following steps:
  • Step 1 providing a first substrate, sequentially forming a gate, a gate insulating layer, a semiconductor layer, and a source/drain on the first substrate, and forming a cover source/drain, a semiconductor layer, and a first layer by a deposition process a first protective layer of a substrate;
  • Step 2 forming a color resist layer on the first protective layer, and removing a color resist layer located in the upper portion of the gate and the source/drain by a wet etching process;
  • Step 3 forming a second protective layer covering the color resist layer and the first protective layer by a deposition process, and etching a via hole penetrating the second protective layer and the first protective layer to expose a part of the surface of the source/drain ;
  • Step 4 forming a pixel electrode on the second protective layer, the pixel electrode contacting the source/drain via a via hole;
  • Step 5 Fill the black matrix material in the region where the color resist layer is removed by the step 2, and use a slit diffractive mask to simultaneously form a black matrix blocking the gate and the source/drain and on the black matrix. a black matrix integrated spacer;
  • Step 6 Providing a second substrate, preparing a common electrode on the second substrate, and filling the first substrate and the second substrate with a liquid crystal between the first substrate and the second substrate, and packaging the first substrate a substrate and a second substrate.
  • the color resist layer in the step 2 includes: a red color resist, a green color resist, and a blue color resist.
  • the material of the pixel electrode in the step 4 is ITO.
  • the black matrix material in the step 5 is an acrylic black photoresist.
  • the thickness of the black matrix material filled in the step 5 is greater than the thickness of the color resist layer.
  • the invention also provides an array color film integrated liquid crystal display panel structure, comprising: a first substrate, a gate electrode disposed on the first substrate, a gate insulating layer covering the gate electrode, and being disposed on the gate insulating layer a semiconductor layer respectively contacting the source/drain on both sides of the semiconductor layer, covering the source/drain, the semiconductor layer, the first protective layer with the first substrate, and being disposed on the first protective layer a color resist layer intermittently between the gate and the source/drain region, a second protective layer covering the color resist layer and the first protective layer, and the second protective layer are disposed through the second protective layer a via electrode of the first protective layer is in contact with the surface of the source/drain portion, and is filled in the discontinuity of the color resist layer and covered a black matrix blocking the gate and the source/drain, and a spacer integrated with the black matrix on the black matrix;
  • the black matrix and the photoresist spacer are simultaneously formed during the fabrication process.
  • the array color film integrated liquid crystal display panel structure further includes a second substrate disposed opposite to the first substrate, a common electrode disposed on a side of the second substrate facing the first substrate, and being interposed on the first A liquid crystal between a substrate and a second substrate.
  • the color resist layer comprises: a red color resist, a green color resist, and a blue color resist.
  • the material of the pixel electrode is ITO.
  • the material of the black matrix and the spacer is an acrylic black photoresist.
  • the invention also provides an array color film integrated liquid crystal display panel structure, comprising: a first substrate, a gate electrode disposed on the first substrate, a gate insulating layer covering the gate electrode, and being disposed on the gate insulating layer a semiconductor layer respectively contacting the source/drain on both sides of the semiconductor layer, covering the source/drain, the semiconductor layer, the first protective layer with the first substrate, and being disposed on the first protective layer a color resist layer intermittently between the gate and the source/drain region, a second protective layer covering the color resist layer and the first protective layer, and the second protective layer are disposed through the second protective layer a pixel electrode of a first protective layer having a via contacting the surface of the source/drain portion, a discontinuity filling the discontinuity of the color resist layer and blocking a black matrix of the gate and the source/drain, and the black matrix a spacer that is integrated with the black matrix;
  • the black matrix and the photoresist spacer are simultaneously formed during the manufacturing process
  • the color resist layer comprises: a red color resist, a green color resist, and a blue color resist;
  • the material of the pixel electrode is ITO;
  • the material of the black matrix and the spacer is an acrylic black photoresist.
  • the invention provides a method for fabricating an array color film integrated liquid crystal display panel, which sequentially forms a gate, a gate insulating layer, a semiconductor layer, a source/drain, and a first on the first substrate.
  • the color resist layer is removed, and the color resist layer located in the upper portion of the gate and the source/drain is removed by a wet etching process, and then the second protective layer covering the color resist layer and the first protective layer is deposited; the pixel electrode Formed on the second protective layer, the source/drain is contacted through the via of the second protective layer and the first protective layer, and the pixel electrode and the source/drain can be realized without opening the hole in the color resist layer.
  • the invention provides an array color film integrated liquid crystal display panel structure, wherein a color resist layer is disposed on the first protective layer and is interrupted in an upper region of the gate and the source/drain, and the second protective layer covers the color a resistive layer and a first protective layer, wherein the pixel electrode is disposed on the second protective layer and is in contact with a surface of the source/drain via a via hole penetrating the second protective layer and the first protective layer, without using a color resist layer
  • the black matrix is filled in the discontinuity of the color resist layer, and the spacers on the black matrix are integrated with the black matrix, and the two are simultaneously formed during the manufacturing process, so that the array color film integrated liquid crystal display panel
  • the aperture ratio is high, the display quality is good, and the production cost is low.
  • FIG. 1 is a flow chart of a method for fabricating an array color film integrated liquid crystal display panel of the present invention
  • step 1 is a schematic diagram of step 1 of a method for fabricating an array color film integrated liquid crystal display panel of the present invention
  • step 2 is a schematic diagram of step 2 of a method for fabricating an array color film integrated liquid crystal display panel of the present invention
  • step 3 is a schematic diagram of step 3 of a method for fabricating an array color film integrated liquid crystal display panel of the present invention
  • step 4 is a schematic diagram of step 4 of a method for fabricating an array color film integrated liquid crystal display panel of the present invention
  • step 5 is a schematic diagram of step 5 of a method for fabricating an array color film integrated liquid crystal display panel of the present invention
  • FIG. 7 is a schematic view showing the step 6 of the method for fabricating the array color film integrated liquid crystal display panel of the present invention and the structure of the array color film integrated liquid crystal display panel of the present invention.
  • the present invention first provides a method for fabricating an array color film integrated liquid crystal display panel, comprising the following steps:
  • Step 1 please refer to FIG. 2, a first substrate 10 is provided, and a gate electrode 21, a gate insulating layer 22, a semiconductor layer 23, and a source/drain 24 are sequentially formed on the first substrate 10, and then deposited by a deposition process.
  • the first substrate 10 is preferably a glass substrate; the gate electrode 21 is formed by depositing a first metal layer and patterning the first metal layer, and the material of the first metal layer may be selected from copper ( One or more of Cu), aluminum (Al), molybdenum (Mo), and titanium (Ti); the gate insulating layer 22 is formed by a chemical vapor deposition process, and the material may be selected from silicon oxide (SiOx), nitrogen. Silicon (SiNx) or a combination of the two; the semiconductor layer 23 is amorphous silicon or polycrystalline silicon; the source/drain 24 is formed by depositing a second metal layer and patterning the second metal layer.
  • the material of the second metal layer may be selected from one or more of Cu, Al, Mo, and Ti; and the material of the first protective layer 25 may be selected from SiOx, SiNx, or a combination of the two.
  • Step 2 referring to FIG. 3, a color resist layer 30 is formed on the first protective layer 25, and the color resist layer 30 located in the region above the gate 21 and the source/drain 24 is removed by a wet etching process.
  • the color resist layer 30 includes: a red color resist, a green color resist, and a blue color resist.
  • the color resist layer 30 may further include a white color resist, a yellow color resist, and the like according to the display requirement. The color resistance of the color.
  • Step 3 referring to FIG. 4, the second protective layer 40 covering the color resist layer 30 and the first protective layer 25 is formed by a deposition process, and the via hole penetrating the second protective layer 40 and the first protective layer 25 is further etched. 45, exposing a portion of the surface of the source/drain 24.
  • the material of the second protective layer 40 may be selected from SiOx, SiNx or a combination of the two; the via 45 penetrating through the second protective layer 40 and the first protective layer 25 is etched by a dry etching process.
  • Step 4 referring to FIG. 5, a pixel electrode 50 is formed on the second protective layer 40, and the pixel electrode 50 is in contact with the source/drain 24 via a via 45.
  • the material of the pixel electrode 50 is ITO; the pixel electrode 50 is formed by vapor-depositing an ITO film and etching the ITO film.
  • the connection between the pixel electrode 50 and the source/drain 24 can be realized without opening the hole in the color resist layer 30, the aperture ratio can be improved, bubbles can be avoided, and the display quality of the liquid crystal display panel can be improved.
  • Step 5 referring to FIG. 6, the black matrix material is filled in the region where the color resist layer 30 is removed through the step 2, and a slit diffractive mask (Slit Mask) is used to simultaneously occlude the gate 21 and the source/
  • the black matrix 60 of the drain 24 and the spacer 70 on the black matrix 60 are integrated with the black matrix 60.
  • the thickness of the black matrix material filled in the step 5 is greater than the thickness of the color resist layer 30, so that the spacer 70 is superior to the resist layer 30;
  • the black matrix material is an acrylic black photoresist.
  • Step 6 referring to FIG. 7, providing a second substrate 90 on which a common electrode 80 is prepared, a pair of first substrate 10 and a second substrate 90, on the first substrate 10 and the second substrate
  • the liquid crystal 100 is poured between 90 to encapsulate the first substrate 10 and the second substrate 90.
  • the second substrate 90 is a glass substrate, and the material of the common electrode 80 is ITO.
  • the present invention further provides an array color film integrated liquid crystal display panel structure, comprising: a first substrate 10, disposed on the first substrate, on the basis of the method for fabricating the array color film integrated liquid crystal display panel a gate electrode 21 on 10, a gate insulating layer 22 covering the gate electrode 21, a semiconductor layer 23 provided on the gate insulating layer 22, and source/drain electrodes 24 respectively contacting the two sides of the semiconductor layer 23, covering The source/drain 24, the semiconductor layer 23, the first protective layer 25 of the first substrate 10, the first protective layer 25, and the region above the gate 21 and the source/drain 24 are intermittent
  • the color resist layer 30 , the second protective layer 40 covering the color resist layer 30 and the first protective layer 25 , and the second protective layer 40 are disposed on the second protective layer 40 via the second protective layer 40 and the first protective layer 25 .
  • An spacer 70 integrated with the black matrix 60 on the matrix 60, and a second substrate 90 disposed opposite to the first substrate 10 are disposed at the The second substrate 90 faces the common electrode 80 on the first substrate 10 side and the liquid crystal 100 interposed between the first substrate 10 and the second substrate 90.
  • the black matrix 60 and the spacer 70 are simultaneously formed during the manufacturing process.
  • the color resist layer 30 includes: a red color resist, a green color resist, and a blue color resist.
  • the color resist layer 30 may further include a white color resist, a yellow color resist, and the like according to the display requirement.
  • the material of the pixel electrode 50 and the common electrode 80 is ITO.
  • the material of the black matrix 60 and the spacer 70 is an acrylic black photoresist.
  • the black matrix 60 and the spacer 70 are simultaneously formed by a slit diffractive reticle.
  • first substrate 10 and the second substrate 90 are both glass substrates; the materials of the gate insulating layer 22, the first protective layer 25, and the second protective layer 40 may be selected from SiOx, SiNx or both. The combination.
  • the material of the gate 21 and the source/drain 24 may be selected from one or more of Cu, Al, Mo, and Ti.
  • the color resist layer 30 is disposed on the first protective layer 25 and is interrupted in the upper region of the gate 21 and the source/drain 24, and the second protective layer 40 covers the
  • the color resist layer 30 and the first protective layer 25 are disposed on the second protective layer 40 via vias 45 and the source/drain electrodes 24 penetrating the second protective layer 40 and the first protective layer 25 Partial surface contact, without opening a hole in the color resist layer 30, the black matrix 60 is filled in the discontinuity of the color resist layer 30, and the spacer 70 on the black matrix 60 is integrated with the black matrix 60, both of which are At the same time, the formation process makes the array color film integrated liquid crystal display panel have higher aperture ratio, better display quality and lower production cost.
  • the method for fabricating the array color film integrated liquid crystal display panel of the present invention is to sequentially fabricate a gate, a gate insulating layer, a semiconductor layer, a source/drain, and a first protective layer on the first substrate. a color resist layer, and removing a color resist layer in a region above the gate and the source/drain by a wet etching process, and depositing a second protective layer covering the color resist layer and the first protective layer; the pixel electrode is formed in the second On the protective layer, the source/drain is contacted through the via hole penetrating the second protective layer and the first protective layer, and the connection between the pixel electrode and the source/drain can be realized without opening the hole in the color resist layer, thereby improving Opening ratio, avoiding bubbles, improving the display quality of the liquid crystal display panel; then filling the black matrix material in the region where the color resist layer is removed by the wet etching process, and using a slit diffractive mask to simultaneously occlude the gate A black matrix with
  • the array color film integrated liquid crystal display panel structure of the present invention has a color resist layer disposed on the first protective layer and interrupted in an upper region of the gate and the source/drain, the second protective layer covering the color resist layer and the second a protective layer, the pixel electrode is disposed on the second protective layer and is in contact with a portion of the surface of the source/drain via a via hole penetrating the second protective layer and the first protective layer, without opening a hole in the color resist layer,
  • the black matrix is filled in the discontinuity of the color resist layer, and the spacers on the black matrix are integrated with the black matrix, and the two are formed simultaneously in the manufacturing process, so that the aperture ratio of the array color film integrated liquid crystal display panel is high.
  • the display quality is good and the production cost is low.

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Abstract

一种阵列彩膜集成式液晶显示面板的制作方法及其结构。该方法将色阻层(30)制作于第一保护层(25)上，通过湿蚀刻制程将位于栅极(21)与源/漏极(24)上方区域内的色阻层(30)去除，再沉积覆盖色阻层(30)及第一保护层(25)的第二保护层(40)；像素电极(50)形成于第二保护层(40)上，经由贯穿所述第二保护层(40)与第一保护层(25)的过孔(45)接触源/漏极(24)；然后在经所述湿蚀刻制程去除色阻层(30)的区域内填充黑色矩阵材料，使用一道狭缝衍射光罩同时制作出黑色矩阵(60)及位于黑色矩阵(60)上与黑色矩阵(60)一体的间隙物(70)，能够提高开口率，避免出现气泡，同时节省光罩，降低生产成本。

Description

阵列彩膜集成式液晶显示面板的制作方法及其结构 技术领域
本发明涉及液晶显示技术领域，尤其涉及一种阵列彩膜集成式液晶显示面板的制作方法及其结构。
背景技术
随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
现有市场上的液晶显示器大部分为背光型液晶显示器，其包括液晶显示面板及背光模组(backlight module)。通常液晶显示面板由彩膜基板(Color Filter，CF)、薄膜晶体管阵列基板(Thin Film Transistor Array Substrate，TFT Array Substrate)、以及一配置于两基板间的液晶层(Liquid Crystal Layer)所构成，其工作原理是通过在两片基板上施加驱动电压来控制液晶层的液晶分子的旋转，将背光模组的光线折射出来产生画面。彩膜基板一侧设置有用于滤光的多种颜色的色阻及用于遮光的黑色矩阵。由于将彩膜基板与阵列基对组时容易出现对位偏差，造成液晶显示面板的开口率降低及漏光的问题。为解决上述问题，提出了阵列彩膜集成式的液晶显示面板，可将彩膜制作于TFT阵列基板一侧(Color Filter On Array，COA)，将黑色矩阵制作于阵列基板一侧(Black Matrix On Array，BOA)，以及将光阻间隙物制作于阵列基板一侧(Photo Spacer On Array)。阵列彩膜集成式的液晶显示面板由于彩膜与黑色矩阵均集成在阵列基板一侧，能够减少对位偏差，增加开口率，降低寄生电容，适于做成曲面形状。
但是现有的阵列彩膜集成式液晶显示面板在制作过程中需要在色阻层上开孔，用于将像素电极电性连接至TFT的源/漏极，由此引起的问题是在色阻层上开孔一方面会造成开口率下降，另一方面在色阻层上开孔还容易隐藏气体，当液晶显示面板遇到高温、震动、或撞击时，隐藏的气体就会溢出，形成气泡(Bubble)，占据液晶的位置，造成显示异常。
发明内容
本发明的目的在于提供一种阵列彩膜集成式液晶显示面板的制作方 法，在不需要在色阻层上开孔的前提下，实现像素电极与源/漏极之间的连接，提高开口率，避免出现气泡，提升液晶显示面板的显示品质，同时节省光罩，降低生产成本。
本发明的目的还在于提供一种阵列彩膜集成式液晶显示面板结构，其开口率较高，显示品质较好，生产成本较低。
为实现上述目的，本发明提供了一种阵列彩膜集成式液晶显示面板的制作方法，包括如下步骤：
步骤1、提供第一基板，在所述第一基板上依次制作栅极、栅极绝缘层、半导体层、及源/漏极，再通过沉积工艺形成覆盖源/漏极、半导体层、与第一基板的第一保护层；
步骤2、在所述第一保护层上制作色阻层，通过湿蚀刻制程将位于所述栅极与源/漏极上方区域内的色阻层去除；
步骤3、通过沉积工艺形成覆盖色阻层及第一保护层的第二保护层，再蚀刻出贯穿所述第二保护层与第一保护层的过孔，暴露出源/漏极的部分表面；
步骤4、在所述第二保护层上形成像素电极，所述像素电极经由过孔与所述源/漏极接触；
步骤5、在经所述步骤2去除色阻层的区域内填充黑色矩阵材料，使用一道狭缝衍射光罩同时制作出遮挡所述栅极与源/漏极的黑色矩阵及位于黑色矩阵上与黑色矩阵一体的间隙物；
步骤6、提供第二基板，在所述第二基板上制备公共电极，对组第一基板和第二基板，在所述第一基板和第二基板之间灌入液晶，封装所述第一基板和第二基板。
所述步骤2中的色阻层包括：红色色阻、绿色色阻、及蓝色色阻。
所述步骤4中像素电极的材料均为ITO。
所述步骤5中的黑色矩阵材料为亚克力黑色光阻。
所述步骤5中填充的黑色矩阵材料的厚度大于色阻层的厚度。
本发明还提供一种阵列彩膜集成式液晶显示面板结构，包括：第一基板、设于第一基板上的栅极、覆盖所述栅极的栅极绝缘层、设于栅极绝缘层上的半导体层、分别接触所述半导体层两侧的源/漏极、覆盖所述源/漏极、半导体层、与第一基板的第一保护层、设于所述第一保护层上且于所述栅极与源/漏极上方区域间断的色阻层、覆盖所述色阻层及第一保护层的第二保护层、设于所述第二保护层上经由贯穿第二保护层与第一保护层的过孔与所述源/漏极部分表面接触的像素电极、填充于色阻层的间断处并遮 挡所述栅极与源/漏极的黑色矩阵、及位于所述黑色矩阵上与黑色矩阵一体的间隙物；
所述黑色矩阵与所述光阻间隙物在制作过程中同时形成。
所述阵列彩膜集成式液晶显示面板结构还包括与所述第一基板相对设置的第二基板、设于所述第二基板面向第一基板一侧的公共电极、及夹设于所述第一基板与第二基板之间的液晶。
所述色阻层包括：红色色阻、绿色色阻、及蓝色色阻。
所述像素电极的材料均为ITO。
所述黑色矩阵与间隙物的材料为亚克力黑色光阻。
本发明还提供一种阵列彩膜集成式液晶显示面板结构，包括：第一基板、设于第一基板上的栅极、覆盖所述栅极的栅极绝缘层、设于栅极绝缘层上的半导体层、分别接触所述半导体层两侧的源/漏极、覆盖所述源/漏极、半导体层、与第一基板的第一保护层、设于所述第一保护层上且于所述栅极与源/漏极上方区域间断的色阻层、覆盖所述色阻层及第一保护层的第二保护层、设于所述第二保护层上经由贯穿第二保护层与第一保护层的过孔与所述源/漏极部分表面接触的像素电极、填充于色阻层的间断处并遮挡所述栅极与源/漏极的黑色矩阵、及位于所述黑色矩阵上与黑色矩阵一体的间隙物；
所述黑色矩阵与所述光阻间隙物在制作过程中同时形成；
其中，所述色阻层包括：红色色阻、绿色色阻、及蓝色色阻；
其中，所述像素电极的材料均为ITO；
其中，所述黑色矩阵与间隙物的材料为亚克力黑色光阻。
本发明的有益效果：本发明提供的一种阵列彩膜集成式液晶显示面板的制作方法，在第一基板上依次制作栅极、栅极绝缘层、半导体层、源/漏极、及第一保护层后制作色阻层，并通过湿蚀刻制程将位于栅极与源/漏极上方区域内的色阻层去除，再沉积覆盖色阻层及第一保护层的第二保护层；像素电极形成于第二保护层上，经由贯穿所述第二保护层与第一保护层的过孔接触源/漏极，无需在色阻层上开孔即可实现像素电极与源/漏极之间的连接，提高开口率，避免出现气泡，提升液晶显示面板的显示品质；然后在经所述湿蚀刻制程去除色阻层的区域内填充黑色矩阵材料，使用一道狭缝衍射光罩同时制作出遮挡所述栅极与源/漏极的黑色矩阵及位于黑色矩阵上与黑色矩阵一体的间隙物，能够节省光罩，简化制程，降低生产成本。本发明提供的一种阵列彩膜集成式液晶显示面板结构，其色阻层设于第一保护层上且于栅极与源/漏极的上方区域间断，第二保护层覆盖所述色 阻层及第一保护层，像素电极设于所述第二保护层上经由贯穿第二保护层与第一保护层的过孔与所述源/漏极的部分表面接触，无需在色阻层上开孔，黑色矩阵填充于色阻层的间断处，位于所述黑色矩阵上的间隙物与黑色矩阵是一体的，二者在制作过程中同时形成，使得阵列彩膜集成式液晶显示面板的开口率较高，显示品质较好，生产成本较低。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的阵列彩膜集成式液晶显示面板的制作方法的流程图；
图2为本发明的阵列彩膜集成式液晶显示面板的制作方法的步骤1的示意图；
图3为本发明的阵列彩膜集成式液晶显示面板的制作方法的步骤2的示意图；
图4为本发明的阵列彩膜集成式液晶显示面板的制作方法的步骤3的示意图；
图5为本发明的阵列彩膜集成式液晶显示面板的制作方法的步骤4的示意图；
图6为本发明的阵列彩膜集成式液晶显示面板的制作方法的步骤5的示意图；
图7为本发明的阵列彩膜集成式液晶显示面板的制作方法的步骤6的示意图暨本发明的阵列彩膜集成式液晶显示面板结构的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明首先提供一种阵列彩膜集成式液晶显示面板的制作方法，包括如下步骤：
步骤1、请参阅图2，提供第一基板10，在所述第一基板10上依次制作栅极21、栅极绝缘层22、半导体层23、及源/漏极24，再通过沉积工艺 形成覆盖源/漏极24、半导体层23、与第一基板10的第一保护层25。
具体地，所述第一基板10优选为玻璃基板；所述栅极21由沉积第一金属层并对第一金属层进行图案化处理制得，所述第一金属层的材料可选择铜(Cu)、铝(Al)、钼(Mo)、钛(Ti)中的一种或多种；所述栅极绝缘层22通过化学气相沉积工艺制得，材料可选择氧化硅(SiOx)、氮化硅(SiNx)或二者的组合；所述半导体层23为非晶硅或多晶硅；所述源/漏极24由沉积第二金属层并对第二金属层进行图案化处理制得，所述第二金属层的材料可选择Cu、Al、Mo、Ti中的一种或多种；所述第一保护层25的材料可选择SiOx、SiNx或二者的组合。
步骤2、请参阅图3，在所述第一保护层25上制作色阻层30，通过湿蚀刻制程将位于所述栅极21与源/漏极24上方区域内的色阻层30去除。
具体地，所述色阻层30包括：红色色阻、绿色色阻、及蓝色色阻，除此之外，所述色阻层30还可以根据显示需要加入白色色阻、黄色色阻等其它颜色的色阻。
步骤3、请参阅图4，通过沉积工艺形成覆盖色阻层30及第一保护层25的第二保护层40，再蚀刻出贯穿所述第二保护层40与第一保护层25的过孔45，暴露出源/漏极24的部分表面。
具体地，所述第二保护层40的材料可选择SiOx、SiNx或二者的组合；采用干蚀刻工艺蚀刻出贯穿所述第二保护层40与第一保护层25的过孔45。
步骤4、请参阅图5，在所述第二保护层40上形成像素电极50，所述像素电极50经由过孔45与所述源/漏极24接触。
具体地，所述像素电极50材料为ITO；通过蒸镀ITO薄膜，并对ITO薄膜进行蚀刻形成所述像素电极50。
由于无需在色阻层30上开孔即可实现像素电极50与源/漏极24之间的连接，能够提高开口率，避免出现气泡，提升液晶显示面板的显示品质。
步骤5、请参阅图6，在经所述步骤2去除色阻层30的区域内填充黑色矩阵材料，使用一道狭缝衍射光罩(Slit Mask)同时制作出遮挡所述栅极21与源/漏极24的黑色矩阵60及位于黑色矩阵60上与黑色矩阵60一体的间隙物70。
特别地，该步骤5中填充的黑色矩阵材料的厚度大于色阻层30的厚度，以使得间隙物70高出色阻层30；所述黑色矩阵材料为亚克力黑色光阻。使用狭缝衍射光罩制程能够在一道制程中同时制得黑色矩阵60及位于黑色矩阵60上与黑色矩阵60一体的间隙物70，相比现有技术中利用一道普通光罩制作黑色矩阵，利用另一道光罩制作光阻间隙物，减少了光罩数量， 简化了制程，降低了生产成本。
步骤6、请参阅图7，提供第二基板90，在所述第二基板90上制备公共电极80，对组第一基板10和第二基板90，在所述第一基板10和第二基板90之间灌入液晶100，封装所述第一基板10和第二基板90。
具体地，所述第二基板90为玻璃基板，所述公共电极80的材料为ITO。
请参阅图7，在上述阵列彩膜集成式液晶显示面板的制作方法的基础上，本发明还提供一种阵列彩膜集成式液晶显示面板结构，包括：第一基板10、设于第一基板10上的栅极21、覆盖所述栅极21的栅极绝缘层22、设于栅极绝缘层22上的半导体层23、分别接触所述半导体层23两侧的源/漏极24、覆盖所述源/漏极24、半导体层23、与第一基板10的第一保护层25、设于所述第一保护层25上且于所述栅极21与源/漏极24上方区域间断的色阻层30、覆盖所述色阻层30及第一保护层25的第二保护层40、设于所述第二保护层40上经由贯穿第二保护层40与第一保护层25的过孔45与所述源/漏极24部分表面接触的像素电极50、填充于色阻层30的间断处并遮挡所述栅极21与源/漏极24的黑色矩阵60、位于所述黑色矩阵60上与黑色矩阵60一体的间隙物70、与所述第一基板10相对设置的第二基板90、设于所述第二基板90面向第一基板10一侧的公共电极80、及夹设于所述第一基板10与第二基板90之间的液晶100。其中，所述黑色矩阵60与所述间隙物70在制作过程中同时形成。
具体地，所述色阻层30包括：红色色阻、绿色色阻、及蓝色色阻，除此之外，所述色阻层30还可以根据显示需要加入白色色阻、黄色色阻等其它颜色的色阻。所述像素电极50与公共电极80的材料为ITO。所述黑色矩阵60与间隙物70的材料为亚克力黑色光阻。所述黑色矩阵60与间隙物70通过一道狭缝衍射光罩同时形成。
进一步地，所述第一基板10与第二基板90均为玻璃基板；所述栅极绝缘层22、第一保护层25、与第二保护层40的材料均可选择SiOx、SiNx或二者的组合。所述栅极21与源/漏极24的材料可选择Cu、Al、Mo、Ti中的一种或多种。
本发明的阵列彩膜集成式液晶显示面板结构，其色阻层30设于第一保护层25上且于栅极21与源/漏极24的上方区域间断，第二保护层40覆盖所述色阻层30及第一保护层25，像素电极50设于所述第二保护层40上经由贯穿第二保护层40与第一保护层25的过孔45与所述源/漏极24的部分表面接触，无需在色阻层30上开孔，黑色矩阵60填充于色阻层30的间断处，位于所述黑色矩阵60上的间隙物70与黑色矩阵60是一体的，二者在 制作过程中同时形成，使得阵列彩膜集成式液晶显示面板的开口率较高，显示品质较好，生产成本较低。
综上所述，本发明的阵列彩膜集成式液晶显示面板的制作方法，在第一基板上依次制作栅极、栅极绝缘层、半导体层、源/漏极、及第一保护层后制作色阻层，并通过湿蚀刻制程将位于栅极与源/漏极上方区域内的色阻层去除，再沉积覆盖色阻层及第一保护层的第二保护层；像素电极形成于第二保护层上，经由贯穿所述第二保护层与第一保护层的过孔接触源/漏极，无需在色阻层上开孔即可实现像素电极与源/漏极之间的连接，提高开口率，避免出现气泡，提升液晶显示面板的显示品质；然后在经所述湿蚀刻制程去除色阻层的区域内填充黑色矩阵材料，使用一道狭缝衍射光罩同时制作出遮挡所述栅极与源/漏极的黑色矩阵及位于黑色矩阵上与黑色矩阵一体的间隙物，能够节省光罩，简化制程，降低生产成本。本发明的阵列彩膜集成式液晶显示面板结构，其色阻层设于第一保护层上且于栅极与源/漏极的上方区域间断，第二保护层覆盖所述色阻层及第一保护层，像素电极设于所述第二保护层上经由贯穿第二保护层与第一保护层的过孔与所述源/漏极的部分表面接触，无需在色阻层上开孔，黑色矩阵填充于色阻层的间断处，位于所述黑色矩阵上的间隙物与黑色矩阵是一体的，二者在制作过程中同时形成，使得阵列彩膜集成式液晶显示面板的开口率较高，显示品质较好，生产成本较低。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (12)

  1. 一种阵列彩膜集成式液晶显示面板的制作方法，包括如下步骤：
    步骤1、提供第一基板，在所述第一基板上依次制作栅极、栅极绝缘层、半导体层、及源/漏极，再通过沉积工艺形成覆盖源/漏极、半导体层、与第一基板的第一保护层；
    步骤2、在所述第一保护层上制作色阻层，通过湿蚀刻制程将位于所述栅极与源/漏极上方区域内的色阻层去除；
    步骤3、通过沉积工艺形成覆盖色阻层及第一保护层的第二保护层，再蚀刻出贯穿所述第二保护层与第一保护层的过孔，暴露出源/漏极的部分表面；
    步骤4、在所述第二保护层上形成像素电极，所述像素电极经由过孔与所述源/漏极接触；
    步骤5、在经所述步骤2去除色阻层的区域内填充黑色矩阵材料，使用一道狭缝衍射光罩同时制作出遮挡所述栅极与源/漏极的黑色矩阵及位于黑色矩阵上与黑色矩阵一体的间隙物；
    步骤6、提供第二基板，在所述第二基板上制备公共电极，对组第一基板和第二基板，在所述第一基板和第二基板之间灌入液晶，封装所述第一基板和第二基板。
  2. 如权利要求1所述的阵列彩膜集成式液晶显示面板的制作方法，其中，所述步骤2中的色阻层包括：红色色阻、绿色色阻、及蓝色色阻。
  3. 如权利要求1所述的阵列彩膜集成式液晶显示面板的制作方法，其中，所述步骤4中像素电极的材料均为ITO。
  4. 如权利要求1所述的阵列彩膜集成式液晶显示面板的制作方法，其中，所述步骤5中的黑色矩阵材料为亚克力黑色光阻。
  5. 如权利要求1所述的阵列彩膜集成式液晶显示面板的制作方法，其中，所述步骤5中填充的黑色矩阵材料的厚度大于色阻层的厚度。
  6. 一种阵列彩膜集成式液晶显示面板结构，包括：第一基板、设于第一基板上的栅极、覆盖所述栅极的栅极绝缘层、设于栅极绝缘层上的半导体层、分别接触所述半导体层两侧的源/漏极、覆盖所述源/漏极、半导体层、与第一基板的第一保护层、设于所述第一保护层上且于所述栅极与源/漏极上方区域间断的色阻层、覆盖所述色阻层及第一保护层的第二保护层、设于所述第二保护层上经由贯穿第二保护层与第一保护层的过孔与所述源/漏 极部分表面接触的像素电极、填充于色阻层的间断处并遮挡所述栅极与源/漏极的黑色矩阵、及位于所述黑色矩阵上与黑色矩阵一体的间隙物；
    所述黑色矩阵与所述光阻间隙物在制作过程中同时形成。
  7. 如权利要求6所述的阵列彩膜集成式液晶显示面板结构，还包括与所述第一基板相对设置的第二基板、设于所述第二基板面向第一基板一侧的公共电极、及夹设于所述第一基板与第二基板之间的液晶。
  8. 如权利要求6所述的阵列彩膜集成式液晶显示面板结构，其中，所述色阻层包括：红色色阻、绿色色阻、及蓝色色阻。
  9. 如权利要求6所述的阵列彩膜集成式液晶显示面板结构，其中，所述像素电极的材料均为ITO。
  10. 如权利要求6所述的阵列彩膜集成式液晶显示面板结构，其中，所述黑色矩阵与间隙物的材料为亚克力黑色光阻。
  11. 一种阵列彩膜集成式液晶显示面板结构，包括：第一基板、设于第一基板上的栅极、覆盖所述栅极的栅极绝缘层、设于栅极绝缘层上的半导体层、分别接触所述半导体层两侧的源/漏极、覆盖所述源/漏极、半导体层、与第一基板的第一保护层、设于所述第一保护层上且于所述栅极与源/漏极上方区域间断的色阻层、覆盖所述色阻层及第一保护层的第二保护层、设于所述第二保护层上经由贯穿第二保护层与第一保护层的过孔与所述源/漏极部分表面接触的像素电极、填充于色阻层的间断处并遮挡所述栅极与源/漏极的黑色矩阵、及位于所述黑色矩阵上与黑色矩阵一体的间隙物；
    所述黑色矩阵与所述光阻间隙物在制作过程中同时形成；
    其中，所述色阻层包括：红色色阻、绿色色阻、及蓝色色阻；
    其中，所述像素电极的材料均为ITO；
    其中，所述黑色矩阵与间隙物的材料为亚克力黑色光阻。
  12. 如权利要求11所述的阵列彩膜集成式液晶显示面板结构，还包括与所述第一基板相对设置的第二基板、设于所述第二基板面向第一基板一侧的公共电极、及夹设于所述第一基板与第二基板之间的液晶。
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Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104298040B (zh) * 2014-10-31 2018-07-06 京东方科技集团股份有限公司 一种coa基板及其制作方法和显示装置
CN104965333B (zh) * 2015-07-15 2018-05-01 深圳市华星光电技术有限公司 Coa型液晶显示面板及其制作方法
CN105206570B (zh) * 2015-10-27 2018-11-23 深圳市华星光电技术有限公司 一种显示面板及其制造方法
CN105353567B (zh) * 2015-12-02 2019-01-15 深圳市华星光电技术有限公司 采用无黑色矩阵技术的va型液晶显示面板及其制作方法
JP2017111270A (ja) * 2015-12-16 2017-06-22 セイコーエプソン株式会社 表示装置、電子機器および表示装置の製造方法
KR102515002B1 (ko) * 2015-12-28 2023-03-28 엘지디스플레이 주식회사 어레이 기판 및 이를 갖는 디스플레이 패널
CN105607365A (zh) * 2015-12-31 2016-05-25 深圳市华星光电技术有限公司 一种coa基板及其制作方法
CN105700216A (zh) * 2016-05-07 2016-06-22 深圳爱易瑞科技有限公司 液晶面板的制作方法
CN105700215A (zh) * 2016-05-07 2016-06-22 深圳爱易瑞科技有限公司 显示面板的制作方法
CN106054473B (zh) * 2016-05-27 2019-05-03 深圳市华星光电技术有限公司 Coa基板、彩色滤光膜及彩色滤光膜的形成方法
JP2018017978A (ja) * 2016-07-29 2018-02-01 株式会社ジャパンディスプレイ 表示装置
KR102519678B1 (ko) * 2016-08-01 2023-04-07 삼성디스플레이 주식회사 유기 발광 표시 장치
CN106324899B (zh) * 2016-11-08 2019-09-13 深圳市华星光电技术有限公司 阵列基板、阵列基板的制作方法及液晶显示面板
CN106773271A (zh) * 2017-03-02 2017-05-31 武汉华星光电技术有限公司 Coa阵列基板以及液晶显示面板
CN107037653A (zh) * 2017-05-11 2017-08-11 惠科股份有限公司 显示面板及其制备方法、及显示器
CN107229152B (zh) * 2017-07-04 2020-01-31 深圳市华星光电半导体显示技术有限公司 液晶显示面板的制作方法及液晶显示面板
CN107329340A (zh) * 2017-08-16 2017-11-07 深圳市华星光电技术有限公司 一种tft阵列基板以及coa型tft液晶面板
CN107357076A (zh) * 2017-08-16 2017-11-17 深圳市华星光电半导体显示技术有限公司 透反式液晶显示装置及其制作方法
CN107490914A (zh) * 2017-09-08 2017-12-19 深圳市华星光电半导体显示技术有限公司 阵列基板及其制作方法
CN108363249B (zh) * 2018-03-14 2023-06-13 京东方科技集团股份有限公司 一种显示面板、其驱动方法及显示装置
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GB2581466A (en) * 2018-07-04 2020-08-26 Flexenable Ltd Control component for optoelectronic device
CN109755285B (zh) 2019-02-01 2022-12-06 合肥鑫晟光电科技有限公司 显示面板及其制造方法和显示装置
CN109739042A (zh) * 2019-02-21 2019-05-10 深圳市华星光电技术有限公司 一种彩膜基板、显示面板及电子装置
CN110297354B (zh) * 2019-05-09 2021-10-12 京东方科技集团股份有限公司 彩膜基板、液晶显示装置及制备方法
CN111045261B (zh) * 2019-12-05 2021-07-27 苏州华星光电技术有限公司 一种显示面板
CN114624916A (zh) * 2022-02-17 2022-06-14 广州华星光电半导体显示技术有限公司 显示面板及制备方法
CN114879394B (zh) * 2022-04-29 2024-04-09 深圳市华星光电半导体显示技术有限公司 一种显示面板的制造方法及显示面板
CN119689751B (zh) * 2025-01-02 2025-12-16 京东方科技集团股份有限公司 一种液晶显示面板及液晶显示装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101149542A (zh) * 2006-09-22 2008-03-26 北京京东方光电科技有限公司 一种彩膜在薄膜晶体管之上的液晶显示器件及其制造方法
CN101149541A (zh) * 2006-09-22 2008-03-26 北京京东方光电科技有限公司 一种彩膜在薄膜晶体管之上的液晶显示器件及其制造方法
CN102722056A (zh) * 2011-03-29 2012-10-10 京东方科技集团股份有限公司 彩色滤光阵列基板及其制造方法和液晶显示面板
CN102929058A (zh) * 2012-11-12 2013-02-13 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
KR20140098402A (ko) * 2013-01-31 2014-08-08 엘지디스플레이 주식회사 컬러필터를 가지는 박막트랜지스터 기판 및 그 제조 방법
CN104375344A (zh) * 2014-11-21 2015-02-25 深圳市华星光电技术有限公司 液晶显示面板及其彩膜阵列基板
CN104503150A (zh) * 2014-12-04 2015-04-08 深圳市华星光电技术有限公司 液晶面板及其制作方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5994721A (en) * 1995-06-06 1999-11-30 Ois Optical Imaging Systems, Inc. High aperture LCD with insulating color filters overlapping bus lines on active substrate
KR100638525B1 (ko) * 1999-11-15 2006-10-25 엘지.필립스 엘시디 주식회사 컬러 액정표시장치용 어레이기판 제조방법
JP3471692B2 (ja) * 2000-01-21 2003-12-02 Ｎｅｃ液晶テクノロジー株式会社 カラー液晶表示パネル
JP3923710B2 (ja) * 2000-06-27 2007-06-06 三菱電機株式会社 水サンプリング装置
JP2002182243A (ja) * 2000-12-15 2002-06-26 Nec Corp 液晶表示装置用トランジスタ基板及びその製造方法
JP2002296609A (ja) * 2001-03-29 2002-10-09 Nec Corp 液晶表示装置及びその製造方法
TW594234B (en) * 2002-12-02 2004-06-21 Ind Tech Res Inst Wide viewing angle LCD device with laterally driven electric field and its manufacturing method
KR100978950B1 (ko) * 2003-12-01 2010-08-31 엘지디스플레이 주식회사 액정표시장치
KR101611923B1 (ko) * 2012-02-27 2016-04-14 엘지디스플레이 주식회사 액정 표시 장치 및 이의 제조 방법
KR20160019004A (ko) * 2014-08-08 2016-02-18 삼성디스플레이 주식회사 표시 패널 및 이의 제조 방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101149542A (zh) * 2006-09-22 2008-03-26 北京京东方光电科技有限公司 一种彩膜在薄膜晶体管之上的液晶显示器件及其制造方法
CN101149541A (zh) * 2006-09-22 2008-03-26 北京京东方光电科技有限公司 一种彩膜在薄膜晶体管之上的液晶显示器件及其制造方法
CN102722056A (zh) * 2011-03-29 2012-10-10 京东方科技集团股份有限公司 彩色滤光阵列基板及其制造方法和液晶显示面板
CN102929058A (zh) * 2012-11-12 2013-02-13 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
KR20140098402A (ko) * 2013-01-31 2014-08-08 엘지디스플레이 주식회사 컬러필터를 가지는 박막트랜지스터 기판 및 그 제조 방법
CN104375344A (zh) * 2014-11-21 2015-02-25 深圳市华星光电技术有限公司 液晶显示面板及其彩膜阵列基板
CN104503150A (zh) * 2014-12-04 2015-04-08 深圳市华星光电技术有限公司 液晶面板及其制作方法

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