CN107490914A - 阵列基板及其制作方法 - Google Patents

阵列基板及其制作方法 Download PDF

Info

Publication number
CN107490914A
CN107490914A CN201710807260.3A CN201710807260A CN107490914A CN 107490914 A CN107490914 A CN 107490914A CN 201710807260 A CN201710807260 A CN 201710807260A CN 107490914 A CN107490914 A CN 107490914A
Authority
CN
China
Prior art keywords
layer
groove
black matrix
cushion part
base palte
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710807260.3A
Other languages
English (en)
Inventor
曹武
柳铭岗
邓竹明
林永伦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to CN201710807260.3A priority Critical patent/CN107490914A/zh
Priority to PCT/CN2017/111071 priority patent/WO2019047369A1/zh
Priority to US15/578,253 priority patent/US10330997B2/en
Publication of CN107490914A publication Critical patent/CN107490914A/zh
Priority to US16/392,630 priority patent/US10423039B2/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13398—Spacer materials; Spacer properties
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Abstract

本发明提供一种阵列基板及其制作方法。该阵列基板包括：衬底基板、设于所述衬底基板上的TFT层、覆盖所述衬底基板及TFT层的保护层、设于所述保护层上的色阻层、覆盖于所述色阻层和保护层上的有机平坦层、及设于所述有机平坦层上的BPS遮光层；所述BPS遮光层包括：黑色矩阵、以及设于所述黑色矩阵上的主隔垫物与辅助隔垫物；所述有机平坦层在与至少部分黑色矩阵对应的区域形成有第一凹槽，所述黑色矩阵填充所述第一凹槽，通过在所述有机平坦层上形成第一凹槽，并使得所述黑色矩阵填入所述第一凹槽中，能够降低黑色矩阵的凸出像素区的程度，避免黑色矩阵在各个子像素之间形成挡墙，影响液晶的流动性，保证液晶成盒制程质量和器件的显示效果。

Description

阵列基板及其制作方法
技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板及其制作方法。
背景技术
液晶显示器(Liquid Crystal Display，LCD)是目前市场上应用最为广泛的显示产品，其生产工艺技术十分成熟，产品良率高，生产成本相对较低，市场接受度高。
现有市场上的液晶显示器大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组。通常液晶显示面板由彩膜(Color Filter，CF)基板、阵列(Array)基板、夹于彩膜基板与阵列基板之间的液晶及密封框胶(Sealant)组成，其中，CF基板主要包括用于通过色阻单元(R/G/B)形成有色光的彩色滤光层、用于防止像素边缘漏光的黑色矩阵(BlackMatrix，BM)、以及用于维持盒厚的隔垫物(Photo Spacer，PS)，在大尺寸液晶显示面板中，通常会使用两种类型以上的隔垫物，如在CF基板上设置高度不同的主隔垫物(Main PS)和辅助隔垫物(Sub PS)，起到多级缓冲的作用，以防止各种Mura或者不良的发生。
COA(Color Filter on Array)技术是将彩色滤光层制备在阵列基板上的技术。由于COA结构的显示面板不存在彩膜基板与阵列基板的对位问题，因此可以降低显示面板制备过程中对盒制程的难度，避免了对盒时的误差，因此黑色矩阵可以设计为窄线宽，提高了开口率。但是追求更好观影效果如曲面显示器，并且更低成本的显示面板已成为技术开发人员持之以恒的研究课题。黑色隔垫物(Black Photo Spacer，BPS)材料是一种新型材料，它既具有传统技术中隔垫物材料的特性，如较优秀的弹性回复力及对液晶较低的污染等，而且还具有较高的光学密度(optical density，OD)值，可以起到遮光作用而达到黑色矩阵的效果。一种新型的BM-Less技术是基于COA技术上将BM与PS集合于同一BPS材料且同一制程完成并设计在Array基板上的一种技术，与传统的液晶显示技术比较，将黑色矩阵、主隔垫物、辅助隔垫物、及彩色滤光膜全部设计在阵列基板侧，这样不仅可以避免对组制程中由于对组精度的误差，或者曲面显示技术中由于面板弯曲造成的平移带来的露光；更重要的是节省一道材料及制程，缩短生产时间(tact time)，降低了产品成本。
与此同时，为了解决改善COA型阵列基板的地形平坦性，同时减少气泡(Bubble)，现有技术还会在COA型阵列基板的色阻层上覆盖一层有机平坦层，然后再在所述有机平坦层上形成包括主隔垫物、辅助副隔垫物、及黑色矩阵的BPS层，同时为了能够形成主隔垫物、辅助副隔垫物、及黑色矩阵之间的断差且保证主隔垫物和辅助隔垫物的高度，BPS层的厚度通常较厚，在具有有机平坦层的情况下其形成黑色矩阵后，容易造成黑色矩阵凸出像素区过多，在各个子像素之间形成壁垒，阻碍液晶的流动，引起显示不良。
发明内容
本发明的目的在于提供一种阵列基板，能够减小黑色矩阵凸出像素区的程度，保证液晶的流动性，避免显示不良。
本发明的目的还在于提供一种阵列基板的制作方法，能够减小黑色矩阵凸出像素区的程度，保证液晶的流动性，避免显示不良。
为实现上述目的，本发明提供了一种阵列基板，包括：衬底基板、设于所述衬底基板上的TFT层、覆盖所述衬底基板及TFT层的保护层、设于所述保护层上的色阻层、覆盖于所述色阻层和保护层上的有机平坦层、及设于所述有机平坦层上的BPS遮光层；
所述BPS遮光层包括：黑色矩阵、以及设于所述黑色矩阵上的主隔垫物与辅助隔垫物；所述有机平坦层在与至少部分黑色矩阵对应的区域形成有第一凹槽，所述黑色矩阵填充所述第一凹槽。
所述色阻层在与所述第一凹槽对应的区域形成有第二凹槽，所述黑色矩阵还填充所述第二凹槽。
所述TFT层包括：多条平行间隔排列的扫描线、多条平行间隔排列的与所述扫描线垂直的数据线、以及多个阵列排布的TFT。
所述第一凹槽形成于所述数据线的上方、或所述扫描线的上方、或所述数据线和扫描线的上方。
所述色阻层具有第一衬垫部和第二衬垫部，所述第一衬垫部的厚度大于所述第二衬垫部，所述主隔垫物与辅助隔垫物分别对应位于所述第一衬垫部和第二衬垫部的上方。
本发明还提供一种阵列基板的制作方法，包括如下步骤：
步骤1、提供一衬底基板，在衬底基板上形成TFT层；
步骤2、在衬底基板及TFT层上覆盖保护层；在所述保护层上形成色阻层；
步骤3、在所述保护层上形成一层有机薄膜，并通过一道光罩制程图案化所述有机薄膜，得到有机平坦层、及形成于所述有机平坦层中的第一凹槽；
步骤4、在所述有机平坦层上涂布BPS材料，并对所述BPS材料进行图案化，得到黑色矩阵、以及设于所述黑色矩阵上的主隔垫物与辅助隔垫物，至少部分黑色矩阵所在的区域与所述第一凹槽相对应并填充所述第一凹槽。
所述步骤2还包括：在所述色阻层中形成第二凹槽，所述步骤3中所述第一凹槽形成在与所述第二凹槽对应的区域。
所述步骤1中所述的TFT层包括：多条平行间隔排列的扫描线、多条平行间隔排列的与所述扫描线垂直的数据线、以及多个阵列排布的TFT。
所述第一凹槽形成于所述数据线的上方、或所述扫描线的上方、或所述数据线和扫描线的上方。
所述色阻层具有第一衬垫部和第二衬垫部，所述第一衬垫部的厚度大于所述第二衬垫部，所述主隔垫物与辅助隔垫物分别对应位于所述第一衬垫部和第二衬垫部的上方。
本发明的有益效果：本发明提供一种阵列基板，该阵列基板包括：衬底基板、设于所述衬底基板上的TFT层、覆盖所述衬底基板及TFT层的保护层、设于所述保护层上的色阻层、覆盖于所述色阻层和保护层上的有机平坦层、及设于所述有机平坦层上的BPS遮光层；所述BPS遮光层包括：黑色矩阵、以及设于所述黑色矩阵上的主隔垫物与辅助隔垫物；所述有机平坦层在与至少部分黑色矩阵对应的区域形成有第一凹槽，所述黑色矩阵填充所述第一凹槽，通过在所述有机平坦层上形成第一凹槽，并使得所述黑色矩阵填入所述第一凹槽中，能够减小黑色矩阵凸出像素区的程度，避免黑色矩阵在各个子像素之间形成挡墙，影响液晶的流动性，保证液晶成盒制程质量和器件的效果。本发明还提供一种阵列基板的制作方法，保证液晶的流动性，避免显示不良。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的阵列基板的第一实施例在TFT区域沿水平线方向的剖面图；
图2为本发明的阵列基板的第一实施例在数据线区域沿水平方向的剖面图；
图3为本发明的阵列基板的俯视图；
图4为为本发明的阵列基板的第二实施例在TFT区域沿水平线方向的剖面图；
图5为本发明的阵列基板的第二实施例在数据线区域沿水平方向的剖面图；
图6为本发明的阵列基板的制作方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1至图3，本发明的第一实施例提供一种阵列基板，包括：衬底基板10、设于所述衬底基板10上的TFT层20、覆盖所述衬底基板10及TFT层20的保护层30、设于所述保护层30上的色阻层40、覆盖于所述色阻层40和保护层30上的有机平坦层50、及设于所述有机平坦层50上的BPS遮光层60；
所述BPS遮光层60包括：黑色矩阵61、以及设于所述黑色矩阵61上的主隔垫物62与辅助隔垫物63；所述有机平坦层50在与至少部分黑色矩阵61对应的区域形成有第一凹槽51，所述黑色矩阵61填充所述第一凹槽51。
具体地，如图3所示，所述TFT层20包括：多条平行间隔排列的扫描线21、多条平行间隔排列的与所述扫描线21垂直的数据线22、以及多个阵列排布的TFT 23，并且所述TFT层20与有机平坦层50之间还设有像素电极24，所述像素电极24通过一连接过孔与所述TFT 23的漏极电性连接。
进一步地，如图1所示，在本发明的第一实施例中，所述色阻层40具有第一衬垫部41和第二衬垫部42，所述第一衬垫部41的厚度大于所述第二衬垫部42，所述主隔垫物62与辅助隔垫物63分别对应位于所述第一衬垫部41和第二衬垫部42的上方，制作时，所述可通过一道仅具有完全透光和完全不透光两种透过率的普通光罩对黑色光阻材料进行图案化，去除除黑色矩阵61、主隔垫物62、及辅助隔垫物63以外的黑色光阻材料即可形成所述BPS层60。
优选地，所述主隔垫物62与辅助隔垫物63的高度断差为0.2-1.0um。
优选地，所述第一衬垫部41位于所述TFT 23的上方，所述第二衬垫部42位于所述扫描线21的上方。
优选地，所述第一衬垫部41可以由相邻的两个不同颜色的色阻411和色阻412堆叠而成。
进一步地，如图2所示，在本发明的第一实施例中，所述第一凹槽51形成于所述数据线22的上方，且所述第一凹槽51完全覆盖所述数据线22，从而在所述黑色矩阵61填充所述第一凹槽51后，所述黑色矩阵61能够完全遮挡住所述数据线22。
具体地，如图4所示，在本发明的第二实施例中，所述色阻层40在与所述第一凹槽51对应的区域形成有第二凹槽52，所述黑色矩阵61还填充所述第二凹槽52，通过在所述色阻层40上形成第二凹槽52，能够进一步降低黑色矩阵61的高度，提升液晶的流动性。
具体地，如图5所示，在本发明的第二实施例中，所述第一衬垫部41和第二衬垫部42还可以通过一道半色调光罩对一相同的颜色的色阻进行图案化形成，所述半色调光罩在与所述第一衬垫部41和第二衬垫部42对应的位置具有不同的透光率，从而使得所述第一衬垫部41和第二衬垫部42具有不同的厚度。
应当理解的是，在上述实施例中所述第一凹槽51虽均形成于所述数据线22的上方，但本发明对此并不限制，在本发明的其他实施例中，所述第一凹槽51也可以形成于所述扫描线21的上方，或同时形成于所述数据线22和扫描线21的上方，实际上只要所述是第一凹槽51对应位于所述黑色矩阵61的下方，能够使得黑色矩阵61落入所述第一凹槽51中，达到降低黑色矩阵61的高度的目的即可。
请参阅图6，本发明提供一种阵列基板的制作方法，包括如下步骤：
步骤1、提供一衬底基板10，在衬底基板10上形成TFT层20、
具体地，如图3所示，所述TFT层20包括：多条平行间隔排列的扫描线21、多条平行间隔排列的与所述扫描线21垂直的数据线22、以及多个阵列排布的TFT 23。
进一步地，所述步骤1具体包括：在所述衬底基板10上沉积第一金属层，对所述第一金属层进行图案化得到扫描线21和与所述扫描线21电性连接的TFT 23的栅极，然后沉积栅极绝缘层，接着在所述栅极绝缘层上形成位于所述栅极上方的有源层，然后在所述栅极绝缘层和有源层上形成第二金属层并对第二金属层进行图案化，得到与所述有源层的两端接触的TFT 23的源极和漏极、以及源极电性连接的数据线；
步骤2、在衬底基板10及TFT层20上覆盖保护层30；在所述保护层30上形成色阻层40；
具体地，所述色阻层40包括红色、绿色及蓝色光阻。
步骤3、在所述色阻层40上形成一层有机薄膜，并通过图案化所述有机薄膜得到有机平坦层50、及形成于所述有机平坦层50中的第一凹槽51；
具体地，所述步骤3中通过一道光罩制程对所述有机平坦层50进行图案化。
具体地，所述第一凹槽51通过图案化对应区域的部分有机薄膜得到，即第一凹槽51不露出保护层30，可有效降低后续制程第一凹槽51中的黑色矩阵61的高度；所述第一凹槽51通过图案化对应区域的全部有机薄膜得到，即第一凹槽51露出保护层30，可进一步降低后续制程第一凹槽51中的黑色矩阵61的高度。优选地，通过蚀刻有机薄膜得到所述第一凹槽51。
步骤4、在所述有机平坦层50上涂布BPS材料，并对所述BPS材料进行图案化，得到黑色矩阵61、以及设于所述黑色矩阵61上的主隔垫物62与辅助隔垫物63，至少部分黑色矩阵61所在的区域与所述第一凹槽51相对应并填充所述第一凹槽51。
具体地，如图1所示，在本发明的第一实施例中，所述色阻层40具有第一衬垫部41和第二衬垫部42，所述第一衬垫部41的厚度大于所述第二衬垫部42，所述主隔垫物62与辅助隔垫物63分别对应位于所述第一衬垫部41和第二衬垫部42的上方，所述步骤4中通过一道仅具有完全透光和完全不透光两种透过率的普通光罩对黑色光阻材料进行图案化，去除除黑色矩阵61、主隔垫物62、及辅助隔垫物63以外的黑色光阻材料即可形成所述BPS层60。
优选地，所述主隔垫物62与辅助隔垫物63的高度断差为0.2-1.0um。
优选地，所述第一衬垫部41位于所述TFT 23的上方，所述第二衬垫部42位于所述扫描线21的上方。优选地，所述第一衬垫部41可以由相邻的两个不同颜色的色阻411和色阻412堆叠而成。
进一步地，如图2所示，在本发明的第一实施例中，所述第一凹槽51形成于所述数据线22的上方，且所述第一凹槽51完全覆盖所述数据线22，从而在所述黑色矩阵61填充所述第一凹槽51后，所述黑色矩阵61能够完全遮挡住所述数据线22。
具体地，如图4所示，在本发明的第二实施例中，所述色阻层40在与所述第一凹槽51对应的区域还形成有第二凹槽52，所述黑色矩阵61还填充所述第二凹槽52，通过在所述色阻层40上形成第二凹槽52，能够进一步降低黑色矩阵61的高度，提升液晶的流动性。
具体地，如图5所示，在本发明的第二实施例中，所述第一衬垫部41和第二衬垫部42还可以通过一道半色调光罩对一相同的颜色的色阻进行图案化形成，所述半色调光罩在与所述第一衬垫部41和第二衬垫部42对应的位置具有不同的透光率，从而使得所述第一衬垫部41和第二衬垫部42具有不同的厚度。
应当理解的是，在上述实施例中所述第一凹槽51虽均形成于所述数据线22的上方，但本发明对此并不限制，在本发明的其他实施例中，所述第一凹槽51也可以形成于所述扫描线21的上方，或同时形成于所述数据线22和扫描线21的上方，实际上只要所述是第一凹槽51对应位于所述黑色矩阵61的下方，能够使得黑色矩阵61落入所述第一凹槽51中，达到降低黑色矩阵61的高度的目的即可。
综上所述，本发明提供一种阵列基板，该阵列基板包括：衬底基板、设于所述衬底基板上的TFT层、覆盖所述衬底基板及TFT层的保护层、设于所述保护层上的色阻层、覆盖于所述色阻层和保护层上的有机平坦层、及设于所述有机平坦层上的BPS遮光层；所述BPS遮光层包括：黑色矩阵、以及设于所述黑色矩阵上的主隔垫物与辅助隔垫物；所述有机平坦层在与至少部分黑色矩阵对应的区域形成有第一凹槽，所述黑色矩阵填充所述第一凹槽，通过在所述有机平坦层上形成第一凹槽，并使得所述黑色矩阵填入所述第一凹槽中，能够减小黑色矩阵凸出像素区的程度，避免黑色矩阵在各个子像素之间形成挡墙，影响液晶的流动性，保证液晶成盒制程质量和器件的显示效果。本发明还提供一种阵列基板的制作方法，保证液晶的流动性，避免显示不良。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

1.一种阵列基板，其特征在于，包括：衬底基板(10)、设于所述衬底基板(10)上的TFT层(20)、覆盖所述衬底基板(10)及TFT层(20)的保护层(30)、设于所述保护层(30)上的色阻层(40)、覆盖于所述色阻层(40)和保护层(30)上的有机平坦层(50)、及设于所述有机平坦层(50)上的BPS遮光层(60)；
所述BPS遮光层(60)包括：黑色矩阵(61)、以及设于所述黑色矩阵(61)上的主隔垫物(62)与辅助隔垫物(63)；所述有机平坦层(50)在与至少部分黑色矩阵(61)对应的区域形成有第一凹槽(51)，所述黑色矩阵(61)填充所述第一凹槽(51)。
2.如权利要求1所述的阵列基板，其特征在于，所述色阻层(40)在与所述第一凹槽(51)对应的区域形成有第二凹槽(52)，所述黑色矩阵(61)还填充所述第二凹槽(52)。
3.如权利要求1所述的阵列基板，其特征在于，所述TFT层(20)包括：多条平行间隔排列的扫描线(21)、多条平行间隔排列的与所述扫描线(21)垂直的数据线(22)、以及多个阵列排布的TFT(23)。
4.如权利要求3所述的阵列基板，其特征在于，所述第一凹槽(51)形成于所述数据线(22)的上方、或所述扫描线(21)的上方、或所述数据线(22)和扫描线(21)的上方。
5.如权利要求1所述的阵列基板，其特征在于，所述色阻层(40)具有第一衬垫部(41)和第二衬垫部(42)，所述第一衬垫部(41)的厚度大于所述第二衬垫部(42)，所述主隔垫物(62)与辅助隔垫物(63)分别对应位于所述第一衬垫部(41)和第二衬垫部(42)的上方。
6.一种阵列基板的制作方法，其特征在于，包括如下步骤：
步骤1、提供一衬底基板(10)，在衬底基板(10)上形成TFT层(20)；
步骤2、在衬底基板(10)及TFT层(20)上覆盖保护层(30)，在所述保护层(30)上形成色阻层(40)；
步骤3、在所述色阻层(40)上形成一层有机薄膜，并通过一道光罩制程图案化所述有机薄膜，得到有机平坦层(50)、及形成于所述有机平坦层(50)中的第一凹槽(51)；
步骤4、在所述有机平坦层(50)上涂布BPS材料，并对所述BPS材料进行图案化，得到黑色矩阵(61)、以及设于所述黑色矩阵(61)上的主隔垫物(62)与辅助隔垫物(63)，至少部分黑色矩阵(61)所在的区域与所述第一凹槽(51)相对应并填充所述第一凹槽(51)。
7.如权利要求6所述的阵列基板的制作方法，其特征在于，所述步骤2还包括：在所述色阻层(40)中形成第二凹槽(52)，所述步骤3中所述第一凹槽(51)形成在与所述第二凹槽(52)对应的区域。
8.如权利要求6所述的阵列基板的制作方法，其特征在于，所述步骤1中所述的TFT层(20)包括：多条平行间隔排列的扫描线(21)、多条平行间隔排列的与所述扫描线(21)垂直的数据线(22)、以及多个阵列排布的TFT(23)。
9.如权利要求8所述的阵列基板的制作方法，其特征在于，所述第一凹槽(51)形成于所述数据线(22)的上方、或所述扫描线(21)的上方、或所述数据线(22)和扫描线(21)的上方。
10.如权利要求6所述的阵列基板的制作方法，其特征在于，所述色阻层(40)具有第一衬垫部(41)和第二衬垫部(42)，所述第一衬垫部(41)的厚度大于所述第二衬垫部(42)，所述主隔垫物(62)与辅助隔垫物(63)分别对应位于所述第一衬垫部(41)和第二衬垫部(42)的上方。
CN201710807260.3A 2017-09-08 2017-09-08 阵列基板及其制作方法 Pending CN107490914A (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201710807260.3A CN107490914A (zh) 2017-09-08 2017-09-08 阵列基板及其制作方法
PCT/CN2017/111071 WO2019047369A1 (zh) 2017-09-08 2017-11-15 阵列基板及其制作方法
US15/578,253 US10330997B2 (en) 2017-09-08 2017-11-15 Array substrate and manufacturing method thereof
US16/392,630 US10423039B2 (en) 2017-09-08 2019-04-24 Array substrate and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710807260.3A CN107490914A (zh) 2017-09-08 2017-09-08 阵列基板及其制作方法

Publications (1)

Publication Number Publication Date
CN107490914A true CN107490914A (zh) 2017-12-19

Family

ID=60651506

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710807260.3A Pending CN107490914A (zh) 2017-09-08 2017-09-08 阵列基板及其制作方法

Country Status (3)

Country Link
US (2) US10330997B2 (zh)
CN (1) CN107490914A (zh)
WO (1) WO2019047369A1 (zh)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108051939A (zh) * 2017-12-29 2018-05-18 深圳市华星光电技术有限公司 液晶面板及其制作方法
CN108535909A (zh) * 2018-04-17 2018-09-14 深圳市华星光电技术有限公司 Bps型阵列基板的制作方法及bps型阵列基板
CN108681142A (zh) * 2018-05-22 2018-10-19 惠科股份有限公司 一种显示面板的制作方法
CN109116617A (zh) * 2018-09-04 2019-01-01 深圳市华星光电技术有限公司 挡墙结构、彩膜阵列基板和液晶显示面板
CN109256052A (zh) * 2018-09-21 2019-01-22 京东方科技集团股份有限公司 电子设备、显示面板、驱动背板及其制造方法
CN109901335A (zh) * 2019-03-27 2019-06-18 京东方科技集团股份有限公司 一种显示面板及显示装置
WO2019127670A1 (zh) * 2017-12-29 2019-07-04 深圳市华星光电半导体显示技术有限公司 Coa型阵列基板
CN110908170A (zh) * 2019-11-14 2020-03-24 Tcl华星光电技术有限公司 显示面板、显示基板及其制作方法
US10782571B2 (en) 2017-12-29 2020-09-22 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. COA-type array substrate
WO2021017298A1 (zh) * 2019-07-31 2021-02-04 Tcl华星光电技术有限公司 显示面板及其制备方法
CN115016164A (zh) * 2022-05-25 2022-09-06 苏州华星光电技术有限公司 显示面板及其制备方法、显示装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107505780A (zh) * 2017-09-26 2017-12-22 深圳市华星光电半导体显示技术有限公司 Bps型阵列基板及其制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040100596A1 (en) * 2002-11-26 2004-05-27 Hannstar Display Corporation Method of utilizing dual-layer photoresist to form black matrixes and spacers on a control circuit substrate
CN105974651A (zh) * 2016-07-18 2016-09-28 深圳市华星光电技术有限公司 液晶显示面板的制作方法
CN105974636A (zh) * 2016-07-18 2016-09-28 深圳市华星光电技术有限公司 液晶显示面板的制作方法
CN106154630A (zh) * 2016-08-31 2016-11-23 深圳市华星光电技术有限公司 一种coa型液晶面板及制作方法
CN106707601A (zh) * 2017-01-18 2017-05-24 昆山龙腾光电有限公司 彩膜基板、彩膜基板制作方法及显示装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101374887B1 (ko) * 2006-05-16 2014-03-13 삼성디스플레이 주식회사 표시 패널
KR20160003357A (ko) * 2014-06-30 2016-01-11 삼성디스플레이 주식회사 액정 표시 장치 및 이의 제조 방법
CN104965366B (zh) * 2015-07-15 2018-11-20 深圳市华星光电技术有限公司 阵列彩膜集成式液晶显示面板的制作方法及其结构
KR102389963B1 (ko) * 2015-08-11 2022-04-25 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
US10114251B2 (en) * 2015-12-17 2018-10-30 A.U. Vista, Inc. Liquid crystal display having holding member and method of fabricating same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040100596A1 (en) * 2002-11-26 2004-05-27 Hannstar Display Corporation Method of utilizing dual-layer photoresist to form black matrixes and spacers on a control circuit substrate
CN105974651A (zh) * 2016-07-18 2016-09-28 深圳市华星光电技术有限公司 液晶显示面板的制作方法
CN105974636A (zh) * 2016-07-18 2016-09-28 深圳市华星光电技术有限公司 液晶显示面板的制作方法
CN106154630A (zh) * 2016-08-31 2016-11-23 深圳市华星光电技术有限公司 一种coa型液晶面板及制作方法
CN106707601A (zh) * 2017-01-18 2017-05-24 昆山龙腾光电有限公司 彩膜基板、彩膜基板制作方法及显示装置

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108051939A (zh) * 2017-12-29 2018-05-18 深圳市华星光电技术有限公司 液晶面板及其制作方法
US10782571B2 (en) 2017-12-29 2020-09-22 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. COA-type array substrate
WO2019127670A1 (zh) * 2017-12-29 2019-07-04 深圳市华星光电半导体显示技术有限公司 Coa型阵列基板
CN108535909A (zh) * 2018-04-17 2018-09-14 深圳市华星光电技术有限公司 Bps型阵列基板的制作方法及bps型阵列基板
CN108681142A (zh) * 2018-05-22 2018-10-19 惠科股份有限公司 一种显示面板的制作方法
CN109116617A (zh) * 2018-09-04 2019-01-01 深圳市华星光电技术有限公司 挡墙结构、彩膜阵列基板和液晶显示面板
CN109116617B (zh) * 2018-09-04 2021-10-26 Tcl华星光电技术有限公司 挡墙结构、彩膜阵列基板和液晶显示面板
CN109256052B (zh) * 2018-09-21 2020-06-02 京东方科技集团股份有限公司 电子设备、显示面板、驱动背板及其制造方法
US11139321B2 (en) 2018-09-21 2021-10-05 Boe Technology Group Co., Ltd. Drive backplane, display panel, electronic apparatus, and method for preparing drive backplane
CN109256052A (zh) * 2018-09-21 2019-01-22 京东方科技集团股份有限公司 电子设备、显示面板、驱动背板及其制造方法
CN109901335A (zh) * 2019-03-27 2019-06-18 京东方科技集团股份有限公司 一种显示面板及显示装置
CN109901335B (zh) * 2019-03-27 2023-08-25 京东方科技集团股份有限公司 一种显示面板及显示装置
WO2021017298A1 (zh) * 2019-07-31 2021-02-04 Tcl华星光电技术有限公司 显示面板及其制备方法
CN110908170A (zh) * 2019-11-14 2020-03-24 Tcl华星光电技术有限公司 显示面板、显示基板及其制作方法
WO2021093021A1 (zh) * 2019-11-14 2021-05-20 Tcl华星光电技术有限公司 显示面板、显示基板及其制作方法
CN115016164A (zh) * 2022-05-25 2022-09-06 苏州华星光电技术有限公司 显示面板及其制备方法、显示装置

Also Published As

Publication number Publication date
US10330997B2 (en) 2019-06-25
US10423039B2 (en) 2019-09-24
US20190079359A1 (en) 2019-03-14
US20190250474A1 (en) 2019-08-15
WO2019047369A1 (zh) 2019-03-14

Similar Documents

Publication Publication Date Title
CN107490914A (zh) 阵列基板及其制作方法
CN105974651B (zh) 液晶显示面板的制作方法
CN105974636B (zh) 液晶显示面板的制作方法
CN102681246B (zh) 一种彩膜基板及其制造方法、以及液晶显示器
CN108535909A (zh) Bps型阵列基板的制作方法及bps型阵列基板
US8698995B2 (en) Liquid crystal display panel having particular laminate spacer
US20120147314A1 (en) Display device and color filter substrate
CN103353683A (zh) 一种阵列基板以及包括该阵列基板的显示装置
KR20100024731A (ko) 박막 트랜지스터 기판 및 그 제조 방법
CN103605231B (zh) 彩膜基板及其制备方法
CN104749812A (zh) 彩色滤光基板及其制造方法、液晶显示装置
CN106773406A (zh) 一种电子设备、阵列基板及其制作方法
CN106324880A (zh) 液晶基板的制作方法
CN107688254A (zh) Coa型液晶显示面板及其制作方法
KR20170054598A (ko) 표시 장치 및 이의 제조 방법
KR20140089015A (ko) 표시 장치 및 그 제조 방법
CN105932025A (zh) 一种阵列基板及其制作方法、显示面板和显示装置
CN104865729A (zh) 彩膜基板及其制作方法、隔垫物的制作方法及显示装置
KR100949506B1 (ko) 액정 표시 장치 및 이의 제조 방법
CN108919549A (zh) 显示面板、其制作方法及显示装置
US10042214B2 (en) Liquid crystal display and manufacturing method thereof
TW200521492A (en) Color filter and fabricating method thereof
WO2019127635A1 (zh) 一种液晶显示面板的配向方法
US11215866B2 (en) Display device, photomask for color filter, and manufacturing method of display device
JP4156722B2 (ja) 液晶表示装置および液晶表示装置の製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20171219