WO2017002798A1 - 記録媒体、フラーレン薄膜の製造方法、記録再生装置、情報記録方法、及び、情報読み出し方法 - Google Patents
記録媒体、フラーレン薄膜の製造方法、記録再生装置、情報記録方法、及び、情報読み出し方法 Download PDFInfo
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- WO2017002798A1 WO2017002798A1 PCT/JP2016/069117 JP2016069117W WO2017002798A1 WO 2017002798 A1 WO2017002798 A1 WO 2017002798A1 JP 2016069117 W JP2016069117 W JP 2016069117W WO 2017002798 A1 WO2017002798 A1 WO 2017002798A1
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- thin film
- recording medium
- fullerene
- recording
- information
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- 239000010409 thin film Substances 0.000 title claims abstract description 121
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 title claims abstract description 106
- 229910003472 fullerene Inorganic materials 0.000 title claims abstract description 104
- 238000000034 method Methods 0.000 title claims description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 145
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 67
- 239000013078 crystal Substances 0.000 claims description 53
- 229910052594 sapphire Inorganic materials 0.000 claims description 25
- 239000010980 sapphire Substances 0.000 claims description 25
- 238000004544 sputter deposition Methods 0.000 claims description 19
- 238000002441 X-ray diffraction Methods 0.000 claims description 17
- 238000012360 testing method Methods 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 12
- 230000003746 surface roughness Effects 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 7
- 238000001771 vacuum deposition Methods 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 4
- 238000010291 electrical method Methods 0.000 claims description 2
- 235000019592 roughness Nutrition 0.000 abstract 1
- 239000010408 film Substances 0.000 description 24
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000000151 deposition Methods 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000010445 mica Substances 0.000 description 3
- 229910052618 mica group Inorganic materials 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- -1 C 70 Chemical class 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 238000005162 X-ray Laue diffraction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000000717 platinum sputter deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/04—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using record carriers having variable electric resistance; Record carriers therefor
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/152—Fullerenes
- C01B32/156—After-treatment
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/739—Magnetic recording media substrates
- G11B5/73911—Inorganic substrates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
- G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
Definitions
- the present invention relates to a recording medium, a method for producing a fullerene thin film, a recording / reproducing apparatus, an information recording method, and an information reading method.
- the present invention claims priority based on Japanese Patent Application No. 2015-131656 filed in Japan on June 30, 2015 and Japanese Patent Application No. 2016-038355 filed in Japan on February 29, 2016. , The contents of which are incorporated herein.
- Patent Document 1 discloses a recording medium having a fullerene molecular multilayer film on the surface of a conductive substrate. Furthermore, a method of recording information while scanning a scanning tunnel microscope (STM) probe on the recording medium is also disclosed.
- STM scanning tunnel microscope
- the recording layer for recording information may be a solid film (continuous film, film without pattern). This is made possible by using a mechanism that rotates the disk and flies the head near the surface of the disk.
- the increase in recording density by the method of reading and writing by skipping the head of the hard disk has come to the limit, and various methods different from that have been proposed.
- the mechanism of reading and writing by changing the direction of the magnetic field that is, since the coercive force needs to be increased as the recording unit becomes smaller, a stronger magnetic field is required for writing.
- the size of the write head must naturally be reduced as the recording density increases.
- the present invention has been completed by producing a hard disk medium (medium) on which a single crystal thin film of fullerene C 60 capable of flying the head is formed instead of the conventional magnetic material film as a recording layer. It was.
- a hard disk medium medium
- a single crystal thin film of fullerene C 60 capable of flying the head is formed instead of the conventional magnetic material film as a recording layer. It was.
- a fullerene single crystal thin film there is a method in which a single crystal substrate of a different material is prepared and heteroepitaxially grown thereon. There have been reported many examples of growing C60 single crystal films on various materials such as mica, Si, highly oriented pyrographite, etc.
- Non-patent Document 1 the one having the best crystallinity is obtained by growing a C60 single crystal thin film on mica.
- Non-patent Document 1 only a very thick film thickness of 150 nm can be evaluated for crystallinity, and a thin C 60 single crystal thin film of about 3 nm obtained by the present invention described later has not been reported.
- a fullerene layer formed directly on an insulating substrate such as mica cannot be used because the electrical characteristics cannot be taken out.
- Patent Document 1 a recording medium having a fullerene molecular multilayer film on the surface of a conductive substrate is reported, but there is no evidence that the molecular multilayer film is a single crystal film.
- a Si substrate is used as a conductive substrate, and an Ag layer is formed on Si to form a base layer.
- Ag due to the weak corrosion resistance of Ag, there is a problem that it is oxidized and sulfided when used in the atmosphere. There is.
- high-oriented pyrographite a high-quality surface can be partially produced by mechanical peeling, but only crystals with dimensions of about a micrometer can be obtained (see Non-Patent Document 2). Absent.
- Another object of the present invention is to provide a recording medium, a fullerene thin film manufacturing method, a recording / reproducing apparatus, an information recording method, and an information reading method using a fullerene thin film as an information recording layer.
- the present invention includes the following means.
- a substrate a platinum layer formed on the substrate and having a (111) plane preferentially oriented, and a fullerene single crystal thin film as a recording layer formed on the platinum layer, the fullerene thin film A recording medium, wherein an average value of four or more fields of average surface roughness Ra measured with an atomic force microscope is 0.5 nm or less.
- the full width at half maximum of the rocking curve of the (220) diffraction peak in X-ray diffraction of the fullerene thin film is 4 ° or less.
- a method for producing a fullerene thin film comprising: a step of forming a platinum layer by sputtering on a substrate; and a step of forming a fullerene layer by vacuum deposition on the platinum layer.
- a recording / reproducing apparatus comprising the recording medium according to any one of (1) to (7).
- a medium driving unit that rotationally drives the recording medium, a read / write head that performs writing of information on the recording medium and reading of recorded information by an electrical method, and the reading / writing head include A head drive unit that moves relative to the recording medium, and a recording / reproduction signal processing system that processes an electrical signal for reading / writing information from / to the recording medium by the read / write head ( The recording / reproducing apparatus according to 15).
- An information reading method comprising: reading recorded information by detecting a change in current between a portion where the information is recorded by a reading head and a portion where the information is not recorded by the reading head.
- a fullerene thin film having a large area and good crystallinity can be obtained.
- the present invention can provide a recording medium using a fullerene thin film having a large area and good crystallinity for an information recording layer, a method for producing a fullerene thin film, a recording / reproducing apparatus, an information recording method, and an information reading method.
- FIG. 1 is a schematic cross-sectional view showing an example of a recording medium according to an embodiment of the present invention.
- FIG. 2 is a graph showing the results of a head flight test performed on the recording medium of the present invention.
- FIG. 3A is a photograph after the head flight test is performed on the recording medium of the example
- FIG. 3B is a photograph after the head flight test is performed on the recording medium of the comparative example.
- FIG. 4 is a measurement result of X-ray diffraction of the example.
- FIG. 5 is a rocking curve of the platinum (111) diffraction peak and the sapphire (0001) diffraction peak in the X-ray diffraction of the example.
- FIG. 6 shows the relationship between the half-value width of the rocking curve of the platinum (111) diffraction peak and the substrate temperature during sputtering.
- FIG. 7 shows the relationship between the full width at half maximum of the rocking curve of the C 60 (220) diffraction peak and the substrate temperature during sputtering.
- FIG. 8 is a diagram showing an example of the structure of a recording / reproducing apparatus including the recording medium of the present invention.
- FIG. 9A is an STM (scanning tunneling microscope) image before applying voltage to the C 60 thin film of the recording medium of the present invention
- FIG. 9B is an STM image after applying voltage.
- FIG. 1 is a schematic cross-sectional view showing an example of a recording medium according to an embodiment of the present invention.
- the recording medium 100 of this embodiment includes a substrate 1, a platinum layer 2 formed on the substrate 1 and preferentially oriented on the (111) plane, and a fullerene thin film 3 as a recording layer formed on the platinum layer.
- the average value of four or more visual fields of the average surface roughness Ra measured using an atomic force microscope (AFM) on the surface 3a of the fullerene thin film is 0.5 nm or less.
- the visual field range for measuring the average surface roughness Ra with an atomic force microscope is 1 ⁇ m ⁇ 1 ⁇ m.
- This measurement is performed for four or more visual fields on the surface of the fullerene thin film, and an average value thereof is obtained.
- the four or more fields of view are provided at positions where the circumferential length is substantially equally divided on the same circumference.
- the radial position of the same circumference is approximately the middle between the maximum radius and the minimum radius of the region where the fullerene thin film is formed.
- an AE Acoustic Emission
- the voltage is 0.1V or less.
- the fullerene thin film is preferably a single crystal thin film. Since it is a single crystal thin film, there is no crystal grain boundary, and flatness with which the head used in the head flight test can fly can be easily obtained.
- the substrate is sapphire (diameter 65 mm)
- a platinum layer film thickness: 10 nm
- a C 60 layer film thickness: 3 nm
- the production conditions of the recording medium are as follows: Sputtering in the formation of the platinum layer was performed under the conditions of 100 W, 20 seconds, Ar gas 0.27 Pa, and substrate temperature 500 ° C. Further, vacuum deposition in the formation of C 60 layers, 400 ° C., 20 sec, a substrate temperature of 190 ° C., was carried out in conditions.
- the average surface roughness Ra was measured for four fields of view (1 ⁇ m ⁇ 1 ⁇ m) at a position that equally divides the circumference having a diameter of about 40 mm into four on the surface of the produced recording medium, the average surface roughness Ra was 0.38 nm and 0.44 nm, respectively. 0.40 nm and 0.50 nm, and the average value was 0.43 nm.
- a single crystal substrate such as sapphire, silicon, MgO (111), SrTiO 3 (111), LaAlO 3 (111) can be used.
- sapphire is preferable.
- platinum is deposited on a single crystal sapphire substrate, a platinum thin film (platinum layer) with the (111) plane preferentially oriented is formed. It is important that this thin film is a single crystal over the entire surface.
- sapphire is preferred from the viewpoint of lattice matching.
- a single crystal substrate having a (0006) plane of sapphire on the surface is more preferable.
- C 60 When depositing directly C 60 on a sapphire single crystal substrate is moved over the substrate, readily island structure is formed. However, due to its strong interaction with C 60 if the platinum, C 60 can be layered growth. If the platinum layer is a single crystal thin film, the C 60 film formed thereon can be formed into a single crystal thin film. Large the grain boundary is there is the step, there is the head flight is inhibited in the case of using the C 60 film in the recording layer of the recording medium.
- the shape of the substrate is not limited, but when used as an alternative to the current magnetic recording medium, it needs to be disk-shaped in order to rotate, and the center of the disk has a spindle. It has a hole to fix to.
- FIG. 2 shows a sapphire substrate / Pt using a head / disk flying characteristic evaluation apparatus (product name: HDF tester, manufactured by Kubota Corporation) generally used in a head flight test of a current rotating disk type magnetic recording medium.
- a range of 15 mm to 27 mm in the radial direction from the center on the surface of the C 60 single crystal thin film of the recording medium is set for 1 second by a DFH (Dynamic Flying Height) head.
- the graph shows the AE (Acoustic Emission) output voltage (V) when seeking by 0.2 mm every time. It was confirmed by X-ray diffraction that the Pt layer was grown with preferential orientation of the (111) plane on sapphire.
- 3 (a) and 3 (b) show photographs of the disk-shaped recording medium after the above-described head flight test of the example and the comparative example, respectively.
- the DFH head had to seek to stably floated without colliding with the surface of C 60 single crystal thin film.
- the surface of the C 60 single crystal thin film formed on the platinum layer with the (111) plane preferentially oriented is in a wide range of a ring-shaped region having an inner diameter of 15 mm to an outer diameter of 27 mm, and the (111) plane is preferentially oriented.
- the (111) plane is preferentially oriented.
- the fact that the head used for the current rotating disk-shaped magnetic recording medium has stably flew over the recording medium of the present invention means that the recording medium of the present invention can record the same as the current rotating disk-shaped magnetic recording medium ( This indicates that it is possible to use a means of writing) and reproduction (reading). That is, while rotating a disk-shaped recording medium using a spindle motor, the head attached to the tip of the swing arm is moved almost radially on the surface of the recording medium to form a concentric circle on the surface of the recording medium. It shows that it is possible to position the desired track in the recorded track group, record the information, and read the information.
- the platinum layer is a layer grown on the substrate with the (111) plane preferentially oriented (that is, the [111] axis is parallel to the normal direction of the surface of the substrate). Platinum is very stable in air and has no polarity.
- the fullerene thin film is formed so flat that it does not collide with the surface even in a flight test with a DFH head in a wide range of the order of 10 mm (AE output voltage is 0.1 V or less). If there are large grain boundaries in the fullerene thin film, stable flight of the head becomes difficult. Therefore, the fullerene thin film needs to have no large grain boundary, and is preferably a single crystal film (single crystal thin film).
- the “single crystal thin film” in the fullerene single crystal thin film means that there is substantially no grain boundary, and this means that the rocking curve in the in-plane direction in the X-ray diffraction analysis of the thin film as described later. It can be evaluated by the half width.
- the platinum layer preferably has a thickness of 5 nm to 30 nm. The reason is that it is difficult to produce a thin film that achieves both crystallinity and flatness, whether it is too thin or too thick.
- the platinum layer preferably has a rocking curve half-value width of the (111) diffraction peak in X-ray diffraction of 0.1 ° or less, and more preferably 0.01 ° or less.
- the platinum layer can preferably observe low-angle specular vibration in X-ray diffraction over 10 °, more preferably over 15 °, and further preferably over 20 °.
- the fact that the low-angle specular vibration can be observed indicates that the film thickness is very uniform.
- fullerene thin film As the fullerene thin film, in addition to C 60 , higher order fullerenes such as C 70 , C 76 , C 78 , and C 82 can also be used. However, since C 60 is spherical, it is preferable because high crystallinity is easily obtained. . In the case of using a C 60 thin, it is preferable purity of the C 60 is as high as possible, to the extent that the effect of the present invention may include fullerenes other than C 60 to C 60 films.
- the fullerene thin film is preferably a single crystal thin film.
- the full width at half maximum of the rocking curve of the (220) diffraction peak in X-ray diffraction is preferably 4 ° or less, and more preferably 3 ° or less.
- the fullerene thin film preferably has a thickness of 2 nm to 5 nm.
- the reason for this is recording using a polymerization reaction, so a thickness of at least 2 molecules of C 60 is necessary, and if the film thickness is too thick, it is insulated and the tunnel current hardly flows even when a voltage is applied. Because.
- a fullerene thin film is produced by forming a platinum layer on a substrate by sputtering and depositing fullerene on the platinum layer by a vacuum deposition method.
- the substrate described above can be used.
- a platinum layer is formed on a substrate.
- the platinum layer is formed on the substrate using a sputtering method.
- the substrate temperature during the sputtering step is appropriately controlled between 400 ° C. and 900 ° C., more preferably between 750 ° C. and 850 ° C. Within this range, a platinum layer with good crystallinity can be formed. That is, when the substrate temperature during the sputtering process is set to 400 ° C. to 900 ° C., the platinum layer with the (111) plane preferentially oriented whose rocking curve half-value width of the (111) diffraction peak in X-ray diffraction is 0.1 ° or less is obtained.
- a platinum layer in which the (111) plane of the rocking curve half width of the (111) diffraction peak in X-ray diffraction is 0.01 ° or less can be preferentially oriented (see FIG. 6). .
- annealing is preferably performed to form a platinum layer with good crystallinity.
- the annealing is performed by appropriately controlling the substrate temperature at 400 ° C. to 900 ° C., more preferably 750 ° C. to 850 ° C.
- the annealing time is preferably 5 minutes to 30 minutes.
- the fullerene thin film is formed on the platinum layer by vacuum vapor deposition using fullerene as a vapor deposition source.
- the substrate temperature during the fullerene thin film forming step is suitably controlled preferably at 100 ° C. to 200 ° C., more preferably 160 ° C. to 200 ° C. That is, when the substrate temperature during the fullerene thin film forming step is set to 100 ° C. to 200 ° C., a fullerene single crystal thin film having a rocking curve half-width of (220) diffraction peak in X-ray diffraction of 4 ° or less can be formed. When it is set to ° C., a fullerene single crystal thin film having a rocking curve half-value width of (220) diffraction peak in X-ray diffraction of 3 ° or less can be formed (see FIG. 7).
- the annealing is performed by appropriately controlling the substrate temperature at 100 ° C. to 200 ° C., more preferably 160 ° C. to 200 ° C.
- the annealing time is preferably 5 minutes to 30 minutes.
- the recording medium of the present invention can be produced using the above-described method for producing a fullerene thin film of the present invention.
- the recording / reproducing apparatus of the present invention comprises the recording medium of the present invention.
- FIG. 8 shows an example of a recording / reproducing apparatus according to an embodiment of the present invention.
- the recording / reproducing apparatus 100 of the present embodiment is an electric method for recording the recording medium 11 of the present invention, the medium driving unit 12 for rotationally driving the recording medium 11, and writing information to the recording medium 11 and reading the recorded information.
- a recording / reproducing signal processing system 15 for processing an electric signal for reading / writing is provided.
- the recording / playback signal processing system 15 processes data input from the outside and sends the recording signal to the read / write head 13, and processes the playback signal from the read / write head 13 and sends the data to the outside.
- the read / write head is a head in which the read head and the write head are integrated.
- the read / write head is preferably a DFH (Dynamic Flying Height) type head having a function of controlling the head flying height by thermal expansion.
- the information recording method of the present invention is the recording medium of the present invention, wherein a disk-shaped recording medium is used to record information on the fullerene thin film, and the recording medium is rotated while the recording medium is rotated.
- a write head is brought close to the surface of the fullerene thin film, the write head is moved in a substantially radial direction of the recording medium, and is positioned on a desired concentric track.
- the write head has a predetermined strength against the fullerene thin film.
- the information is recorded on the fullerene thin film by locally applying a voltage of.
- the method of Patent Document 1 can be used as an example of the principle of information recording.
- the information reading method of the present invention is a method of reading information recorded on the fullerene thin film using the information recording method of the present invention, wherein the information is read on the surface of the fullerene thin film of the recording medium while rotating the recording medium.
- the read head is moved in a substantially radial direction of the recording medium and positioned on a desired concentric track, and the information is recorded by the read head and the information is not recorded.
- the recorded information is read by detecting the current change of the part by the read head.
- the method of Patent Document 1 can be used as an example of the principle of reading information.
- Information can be recorded (written) by applying a voltage and applying a tunnel current. Since the fullerene single crystal thin film is an insulator, no current flows. However, when a voltage exceeding a certain level is applied, a tunnel current flows due to the tunnel effect. At that time, fullerene molecules are polymerized to form a polymer and have metallic electrical conductivity. Here, since the difference is detected by measuring the tunnel resistance between the superposed place and the non-polymerized place, information can be recorded by the tunnel current.
- the fullerene single crystal thin film can be distinguished from the place where the tunnel current does not flow from the place where the tunnel current flows. That is, when the same voltage is applied once again to the place where the tunnel current has flowed, more tunnel current flows than the first time.
- the sapphire substrate and fullerene single crystal thin film are also in contact with the spindle, but these have higher resistance than the platinum layer, so that the in-plane direction Current does not flow through.
- a sensor for detecting a tunnel current in the head In order to write to and read from a recording medium by the hard disk method, it is necessary to incorporate a sensor for detecting a tunnel current in the head.
- the mechanism for flying the head can be the same as that used in current hard disk heads. Since the current hard disk has already achieved a flying height of 10 mm (almost the same as the distance between the recording medium and the probe in information recording using the STM probe of Patent Document 1) using DFH when reading and writing, The same mechanism can be used.
- a sapphire substrate having a diameter of 2 inches (about 50 mm) with a flat (0001) surface was prepared, and the substrate temperature was kept at 800 ° C. for about 10 minutes. Thereby, impurities can be removed and a clean surface can be obtained.
- a platinum film was formed on the substrate by sputtering at a substrate temperature of 800 ° C.
- the sputtering conditions were as follows: champ ultimate vacuum 1 ⁇ 10 ⁇ 5 Pa, deposition Ar pressure 0.2 Pa, deposition power 80 W, deposition time 20 seconds.
- the substrate temperature was kept at 800 ° C., and annealing in vacuum was performed for 10 minutes.
- Sputtering was performed with a DC magnetron sputtering apparatus.
- the substrate temperature was kept at 180 ° C. for 5 minutes, and annealing in vacuum was performed. Forming products of C 60 is improved by the annealing.
- the C 60 results of X-ray diffraction of the surface between the direction of the single crystal thin film shown in FIG. Only platinum (111) and sapphire (0006) diffraction peaks were confirmed in the X-ray diffraction results. In addition, Laue vibration is observed around the specular vibration and platinum (111) diffraction peak on the low angle side. This is because the interface between platinum and sapphire is very clearly defined, and the film thickness of platinum is uniform. It is also shown that platinum is epitaxially grown on sapphire.
- FIG. 5 shows rocking curves of platinum (111) and sapphire (0006) diffraction peaks of the single crystal thin film.
- the full width at half maximum (FWHM) of the rocking curve provides information on the crystallinity of platinum. It was found that platinum was grown with almost the same crystallinity as that of the single crystal sapphire substrate under the conditions of implementation, and very good crystallinity was realized. Since 90% or more of arbitrary measurement locations on a 2-inch sapphire substrate have a result that the half-value width of platinum (111) is 0.01 ° or less, a thin film having a large area and good crystallinity is formed. I found out that
- FIG. 6 shows the relationship between the half-value width of the rocking curve of platinum (111) and the substrate temperature during the sputtering.
- the half-value width is narrow between 400 ° C. and 900 ° C.
- the half-value width is 0.01 ° or less between 750 ° C. and 850 ° C., indicating that the orientation between the faces is good.
- FIG. 7 shows the relationship between the half width of the rocking curve of C 60 (220) and the substrate temperature during sputtering. It was found that the full width at half maximum was narrow for the questions of 100 ° C. to 200 ° C., and the full width at half maximum was further narrowed for the questions of 160 ° C. to 200 ° C.
- FIG. 9 shows the recording medium of the present invention consisting of a sapphire substrate / platinum layer / C 60 single crystal thin film before and after applying a voltage to the C 60 single crystal thin film with a scanning tunneling microscope (STM: manufactured by Cientamicron). It is an STM image.
- STM scanning tunneling microscope
- the production conditions of the recording medium are as follows: Substrate: Sapphire 2.5 inches, plane orientation (0001) Pt sputtering: 100 W, 20 seconds, Ar gas 0.27 Pa, substrate temperature 500 ° C. C60 deposition: 400 ° C., 20 seconds, substrate temperature 190 ° C.
- the STM probe is made of tungsten, and the scanning conditions for observation and the applied voltage conditions for recording are as follows: Normal scanning conditions: 2V, 0.2nA Recording voltage conditions: -3.5V, 1nA (constant current mode), 1 second
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Abstract
Description
本発明は、2015年6月30日に日本に出願された特願2015-131656号、および、2016年2月29日に日本に出願された特願2016-038355号に基づき優先権を主張し、その内容をここに援用する。
ハードディスクドライブの最大の特徴は情報を記録する記録層がベタ膜(連続膜、パターンなしの膜)でよいという点にある。これを可能にしたのは、円板を回転させてその円板の表面近傍でヘッドを飛ばすという機構を用いたことである。
ハードディスクのヘッドを飛ばして読み書きするという方式による高記録密度化が限界に来ているという認識があり、それとは異なる方法が様々提案されている。ハードディスクの記録密度が現在限界に来ているという認識において、実際に限界に来ているのは磁場の向きを変えることで読み書きするという機構である。すなわち、記録単位が小さくなるにしたがって保磁力を上げる必要があるので、書き込みにはより強い磁場が必要である。一方で、書き込みヘッドの大きさは記録密度が上がるにしたがって当然小さくする必要がある。従って、小さい場所に強力な磁場を閉じ込めることが必要とされるが、これが困難になってきている。そこで、読み書きする機構に技術的な新展開が求められることになる。
本発明は検討の結果、記録層として従来の磁性材料膜に代えて、ヘッドの飛行が可能なフラーレンC60の単結晶薄膜を成膜したハードディスクメディア(媒体)を作製できたことにより完成に至った。
フラーレン単結晶薄膜を作製するためには異種物質の単結晶基板を用意し、その上にヘテロエピタキシャル成長させる方法がある。これまでマイカ、Si、高配向パイログラファイトなど様々な物質の上に分子線エピタキシ一法や真空蒸着法などを用いてC60単結晶膜を成長させた例が数多く報告されている。その中でも最も結晶性の良いものはマイカ上にC60単結晶薄膜を成長させたもの(非特許文献1)である。しかし、非特許文献1においては150nmという非常に厚い膜厚で漸く結晶性が評価できているに過ぎず、後述する本願発明により得られる3nm程度の薄いC60単結晶薄膜は報告されていない。またデバイスを電圧で駆動させる場合、マイカのような絶縁性基板の上に直接フラーレン層を形成したものは電気的特性を取り出すことが出来ないため用いることが出来ない。特許文献1において導電性基板の表面にフラーレン分子多層膜を有する記録媒体が報告されているが、分子多層膜であってそれが単結晶膜になっているという証拠は示されていない。特許文献1では導電性基板としてSi基板を用い、Si上にAg層を形成して下地層にしているが、Agの耐食性の弱さから大気中での使用においては酸化・硫化するという問題点がある。また高配向パイログラファイトにおいては機械的剥離によって高品質の表面を部分的に出すことが出来るが、マイクロメートル程度の寸法の結晶しかできないために(非特許文献2参照)工業的生産に向くものではない。
また、本発明はフラーレン薄膜を情報記録層に用いる、記録媒体、フラーレン薄膜の製造方法、記録再生装置、情報記録方法、及び、情報読み出し方法を提供することを課題とする。
前記記録媒体を回転させながら、前記記録媒体のフラーレン薄膜の表面に書き込みヘッドを近接させ、該書き込みヘッドを前記記録媒体の略半径方向を移動させて、同心円状の所望のトラックに位置決めし、前記書き込みヘッドにより前記フラーレン薄膜に対して所定強度の電圧を局所的に印加することにより前記フラーレン薄膜に情報を記録することを特徴とする情報記録方法。
前記記録媒体を回転させながら、前記記録媒体のフラーレン薄膜の表面に読み出しヘッドを近接させ、該読み出しヘッドを前記記録媒体の略半径方向を移動させて、同心円状の所望のトラックに位置決めし、前記読み出しヘッドにより前記情報が記録された部位と前記情報が記録されていない部位の電流変化を前記読み出しヘッドにより検出することにより記録した情報を読み出すことを特徴とする情報読み出し方法。
なお、以下の説明で用いる図面は、特徴をわかりやすくするために便宜上特徴となる部分を拡大して示している場合があり、各構成要素の寸法比率などは実際と同じであるとは限らない。また、以下の説明において例示される材料、寸法等は一例であって、本発明はそれらに限定されるものではなく、本発明の効果を奏する範囲で適宜変更して実施することが可能である。一の実施形態で示した構成を他の実施形態に適用することもできる。
「層」、「薄膜」はいずれも薄い層あるいは薄い膜の意味で用いている。
図1は、本発明の一実施形態に係る記録媒体の一例を示した断面模式図である。
本実施形態の記録媒体100は、基板1と、該基板1上に形成され、(111)面に優先配向した白金層2と、該白金層上に形成された、記録層であるフラーレン薄膜3と、を備え、フラーレン薄膜の表面3aにおいて原子間力顕微鏡(AFM)を用いて測定した平均表面粗さRaの4つ以上の視野についての平均値が0.5nm以下である。
ここで、上記平均値の測定は以下のようにして行う。原子間力顕微鏡で平均表面粗さRaを測定する視野範囲は1μm×1μmとする。この測定をフラーレン薄膜の表面上の4つ以上の視野について行い、これらの平均値を求める。上記4つ以上の視野は、例えば円板形状の記録媒体の場合には、同一円周上で円周長さをほぼ等分する位置に設けられる。また、上記同一円周の半径方向の位置は、フラーレン薄膜が形成される領域の最大半径と最小半径のほぼ中間とする。上記の原子間力顕微鏡による平均表面粗さRaの4つ以上の視野についての平均値が0.5nm以下であると、現行のハードディスクのヘッド飛行試験に用いられるヘッドが飛行可能である。具体的には、上記記録媒体を回転させ、DFH(Dynamic Flying Height)ヘッドを用いて行うヘッド飛行試験において、フラーレン薄膜の表面でDFHヘッドを半径方向にシークさせたときのAE(Acoustic Emission)出力電圧が0.1V以下である。
測定した記録媒体は、基板はサファイア(直径65mm)、その上にスパッタリングにより白金層(膜厚:10nm)を形成し、その白金層上に真空蒸着によってC60層(膜厚:3nm)を形成したものである。
記録媒体の作製条件は以下の通りである;
白金層の形成におけるスパッタリングは、100W、20秒、Arガス 0.27Pa、基板温度 500℃、の条件で行った。また、C60層の形成における真空蒸着は、400℃、20秒、基板温度190℃、の条件で行った。
基板は、例えば、サファイア、シリコン、MgO(111)、SrTiO3(111)、LaAlO3(111)などの単結晶基板を用いることができる。フラーレン単結晶薄膜の結晶性を高めるためにはサファイアの方が好ましい。
単結晶のサファイア基板の上に白金を成膜すると(111)面が優先配向した白金薄膜(白金層)が形成される。この薄膜が全面にわたって単結晶であることが重要である。単結晶基板であれば白金(111)層の単結晶を成長させることが可能ではあるが、格子整合性の観点からサファイアが好ましい。
白金(111)層をエピタキシャルに成長させるという観点でサファイアの(0006)面が表面に出ている単結晶基板がより好ましい。
サファイア単結晶基板の上に直接C60を蒸着するとC60が基板上を移動して、容易に島状構造が形成される。しかし、白金上であればC60と強い相互作用を持つため、C60は層状成長することが出来る。
白金層が単結晶薄膜であるとその上に形成されるC60膜を単結晶薄膜に形成することができる。大きな粒界があるとそこが段差になり、記録媒体の記録層にC60膜を用いた場合にヘッドの飛行が阻害されることがある。
Pt層はX線回折によって、サファイア上に(111)面が優先配向して成長していることを確認した。
図2には比較例として、白金層がない、ガラス基板/CrTi層(膜厚:10nm)/C60層(膜厚:3nm)の構成の円板状記録媒体について同様のヘッド飛行試験を行った結果も示す。
これに対して、実施例の方は図3(a)の写真でも剥がれ落ちている部分はなく、図2のグラフでもAE出力電圧(V)が0.1V以下であることからわかるように、DFHヘッドがC60単結晶薄膜の表面に衝突することなく安定的に浮上してシークできていた。
この結果は、(111)面が優先配向した白金層上に形成されたC60単結晶薄膜の表面が、内径15mmから外径27mmのリング状領域という広範囲で、(111)面が優先配向した白金層を有さずCrTi層上に形成されたC60単結晶薄膜に比べて、DFHヘッドによる飛行試験でも表面に衝突しないほど平坦であることを示すものである。
白金層は、基板上に(111)面が優先配向して(すなわち、〔111〕軸を基板の表面の法線方向に平行にするように)成長した層である。
白金は、空気中で極めて安定であり、極性もない。
白金層の(111)面上に、フラーレン薄膜が10mmオーダーの広範囲でDFHヘッドによる飛行試験でも表面に衝突しないほど(AE出力電圧が0.1V以下)、平坦に形成される。フラーレン薄膜に大きな粒界が存在するとヘッドの安定飛行は難しくなる。したがって、フラーレン薄膜は大きな粒界が存在しないことが必要であり、単結晶膜(単結晶薄膜)であることが好ましい。ここでフラーレン単結晶薄膜における「単結晶薄膜)」とは、実質的に結晶粒界が存在しないことを意味し、これは後述のように薄膜のX線回折解析における面内方向のロッキングカーブの半値幅で評価できる。
フラーレン薄膜としては、C60以外に、C70、C76、C78、C82等の高次のフラーレンも用いることができるが、特にC60は球状であるため高い結晶性が得られやすく好ましい。また、C60薄膜を用いる場合、C60の純度はできるだけ高いことが好ましいが、本発明の効果を奏する範囲で、C60薄膜にC60以外のフラーレンが含まれてもよい。フラーレン薄膜は単結晶薄膜であることが好ましい。
本発明のフラーレン薄膜の製造方法では基板上にスパッタリングで白金層を形成し、前記白金層上にフラーレンを真空蒸着法で成膜することによりフラーレン薄膜を製造する。
まず、基板上に白金層を形成する。白金層は、スパッタリング法を用いて前記基板上に形成する。好ましくは、前記スパッタリングの工程中の基板温度を400℃~900℃、より好ましくは750℃~850℃の間で適宜制御する。この範囲であれば、結晶性の良い白金層が形成できる。すなわち、スパッタリングの工程中の基板温度を400℃~900℃にすると、X線回折における(111)回折ピークのロッキングカーブ半値幅が0.1°以下の(111)面が優先配向した白金層が形成でき、750℃~850℃にすると、X線回折における(111)回折ピークのロッキングカーブ半値幅が0.01°以下の(111)面が優先配向した白金層が形成できる(図6参照)。
前記アニールは基板温度を400℃~900℃、より好ましくは750℃~850℃に適宜制御して行う。アニールの時間は5分~30分が好ましい。
フラーレン薄膜はフラーレンを蒸着源として真空蒸着法で、前記白金層上に形成する。
本発明の記録媒体を製造するには、上述の本発明のフラーレン薄膜の製造方法を用いて行うことができる。
本発明の記録再生装置は、本発明の記録媒体を備えるものである。
本実施形態の記録再生装置100は、本発明の記録媒体11、記録媒体11を回転駆動させる媒体駆動部12、記録媒体11に対して情報の書き込み及び記録された情報の読み出しを電気的方法で行う読み出し/書き込みヘッド(フライングヘッド)13、読み出し/書き込みヘッド13を記録媒体11に対して相対的に移動させるヘッド駆動部14、及び前記読み出し/書き込みヘッド13で前記記録媒体11に対して情報の読み出し/書き込みを行うための電気信号の処理を行う記録再生信号処理系15を備えている。
ここで、上記読み出し/書き込みヘッドは読み出しヘッドと書き込みヘッドが一体化されたヘッドである。また、上記読み出し/書き込みヘッドは熱膨張によるヘッド浮上量の制御機能を有するDFH(Dynamic Flying Height)方式のヘッドであることが好ましい。
本発明の情報記録方法は、本発明の記録媒体であって、円板状の記録媒体を用い、前記フラーレン薄膜に情報を記録する方法であって、前記記録媒体を回転させながら、前記記録媒体のフラーレン薄膜の表面に書き込みヘッドを近接させ、該書き込みヘッドを前記記録媒体の略半径方向を移動させて、同心円状の所望のトラックに位置決めし、前記書き込みヘッドにより前記フラーレン薄膜に対して所定強度の電圧を局所的に印加することにより前記フラーレン薄膜に情報を記録するものである。
本発明の情報記録方法において、情報の記録の原理の一例として特許文献1の方法を用いることができる。
本発明の情報読み出し方法は、本発明の情報記録方法を用いて前記フラーレン薄膜に記録された情報を読み出す方法であって、前記記録媒体を回転させながら、前記記録媒体のフラーレン薄膜の表面に読み出しヘッドを近接させ、該読み出しヘッドを前記記録媒体の略半径方向を移動させて、同心円状の所望のトラックに位置決めし、前記読み出しヘッドにより前記情報が記録された部位と前記情報が記録されていない部位の電流変化を前記読み出しヘッドにより検出することにより記録した情報を読み出すものである。
本発明の情報読み出し方法において、情報の読み出しの原理の一例として特許文献1の方法を用いることができる。
一方、流れるトンネル電流の大きさの違いを検出することにより、記録された情報を読み取る(再生)することが可能となる。さらに逆方向に電圧をかけると一回目に流れたトンネル電流の値に戻る。したがって消去が可能である。
(0001)表面が平坦に研磨された直径2インチ(約50mm)のサファイア基板を用意し、基板温度を800℃で約10分保った。これにより不純物を除去し、清浄表面を出すことが出来る。
次に、フラーレンC60を抵抗加熱型の蒸着源るつぼ内に入れ、るつぼを加熱し、C60を昇華させて、前記白金層上に真空蒸着でC60単結晶薄膜を成膜した。成膜時の真空度は1×10-5Pa、蒸発源の温度は約380℃、成膜時間は30秒、基板は180℃とした。
基板:サファイア 2.5インチ、面方位(0001)
Ptスパッタ:100W、20秒、Arガス0.27Pa、基板温度 500℃
C60蒸着:400℃、20秒、基板温度190℃
また、STMの探針はタングステン製のものを用い、観察のための走査条件、および、記録のための印加電圧条件は以下の通りである;
通常走査条件 : 2V、 0.2nA
記録電圧条件 : -3.5V、1nA(定電流モード)、1秒
図9(a)における矢印で示したC60分子像の直上で記録のための電圧を印加した。
図9(b)における2つの矢印のうち、左側の矢印で示したC60分子像は(a)において矢印で示したC60分子像である。
左側の矢印で示したC60分子像の直上で記録のための電圧を印加したところ、そのC60分子像の隣のC60分子像の輝点が薄くなっていることがわかる。
2 白金層
3 フラーレン単結晶薄膜
11 記録媒体
12 媒体駆動部
13 読み出し/書き込みヘッド
14 ヘッド駆動部
15 記録再生信号処理系
100 記録媒体
200 記録再生装置
Claims (18)
- 基板と、
該基板上に形成され、(111)面が優先配向した白金層と、
該白金層上に形成された、記録層であるフラーレン薄膜と、を備え、
前記フラーレン薄膜の表面において原子間力顕微鏡を用いて測定した平均表面粗さRaの4つ以上の視野についての平均値が0.5nm以下であることを特徴とする記録媒体。 - 前記フラーレン薄膜が単結晶薄膜であることを特徴とする請求項1に記載の記録媒体。
- 前記白金層のX線回折における(111)回折ピークのロッキングカーブ半値幅が0.1°以下であることを特徴とする請求項1又は2のいずれかに記載の記録媒体。
- 前記フラーレン薄膜のX線回折における(220)回折ピークのロッキングカーブ半値幅が4°以下であることを特徴とする請求項1~3のいずれか一項に記載の記録媒体。
- 前記基板が円板状であることを特徴とする請求項1~4のいずれか一項に記載の記録媒体。
- 前記記録媒体を回転させ、DFH(Dynamic Flying Height)ヘッドを用いて行うヘッド飛行試験において、前記フラーレン薄膜の表面で前記DFHヘッドをシークさせたときのAE(Acoustic Emission)出力電圧が0.1V以下であることを特徴とする請求項5に記載の記録媒体。
- 前記基板がサファイア基板であることを特徴とする請求項1~6のいずれか一項に記載の記録媒体。
- 基板上にスパッタリングで白金層を形成する工程と前記白金層上に真空蒸着でフラーレン層を形成する工程を備えるフラーレン薄膜の製造方法。
- 前記フラーレン層が単結晶薄膜であることを特徴とする請求項8に記載のフラーレン薄膜の製造方法。
- 前記スパッタリングの工程中に基板温度を400℃~900℃にする請求項8又は9のいずれかに記載のフラーレン薄膜の製造方法。
- 前記スパッタリングの工程後に基板温度を400℃~900℃とし、アニールする請求項8~10のいずれか一項に記載のフラーレン薄膜の製造方法。
- 前記基板がサファイア基板である請求項8~11のいずれか一項に記載のフラーレン薄膜の製造方法。
- 前記フラーレン層を形成する工程中に基板温度を100℃~200℃にする請求項8~12のいずれか一項に記載のフラーレン薄膜の製造方法。
- 前記フラーレン層を形成する工程後に基板温度を100℃~200℃とし、アニールする請求項8~13のいずれか一項に記載のフラーレン薄膜の製造方法。
- 請求項1~7のいずれか一項に記載の記録媒体を備える記録再生装置。
- さらに、前記記録媒体を回転駆動させる媒体駆動部、前記記録媒体に対して情報の書き込み及び記録された情報の読み出しを電気的方法で行う読み出し/書き込みヘッド、前記読み出し/書き込みヘッドを前記記録媒体に対して相対的に移動させるヘッド駆動部、及び前記読み出し/書き込みヘッドで前記記録媒体に対して情報の読み出し/書き込みを行うための電気信号の処理を行う記録再生信号処理系を備える請求項15に記載の記録再生装置。
- 請求項1~7のいずれか一項に記載の記録媒体であって、円板状の記録媒体を用い、前記フラーレン薄膜に情報を記録する方法であって、
前記記録媒体を回転させながら、前記記録媒体のフラーレン薄膜の表面に書き込みヘッドを近接させ、該書き込みヘッドを前記記録媒体の略半径方向を移動させて、同心円状の所望のトラックに位置決めし、前記書き込みヘッドにより前記フラーレン薄膜に対して所定強度の電圧を局所的に印加することにより前記フラーレン薄膜に情報を記録することを特徴とする情報記録方法。 - 請求項17に記載の情報記録方法を用いて前記フラーレン薄膜に記録された情報を読み出す方法であって、
前記記録媒体を回転させながら、前記記録媒体のフラーレン薄膜の表面に読み出しヘッドを近接させ、該読み出しヘッドを前記記録媒体の略半径方向を移動させて、同心円状の所望のトラックに位置決めし、前記読み出しヘッドにより前記情報が記録された部位と前記情報が記録されていない部位の電流変化を前記読み出しヘッドにより検出することにより記録した情報を読み出すことを特徴とする情報読み出し方法。
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US15/529,614 US10008232B2 (en) | 2015-06-30 | 2016-06-28 | Recording medium, method of manufacturing fullerene thin film, recording reproducing apparatus, information recording method, and information reading method |
CN201680003036.2A CN107077868B (zh) | 2015-06-30 | 2016-06-28 | 记录介质、富勒烯薄膜的制造方法、记录再现装置、信息记录方法及信息读出方法 |
EP16817906.7A EP3229235A4 (en) | 2015-06-30 | 2016-06-28 | Recording medium, fullerene thin film manufacturing method, recording and reproducing device, information recording method, and information read-out method |
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US10008232B2 (en) * | 2015-06-30 | 2018-06-26 | Showa Denko K.K. | Recording medium, method of manufacturing fullerene thin film, recording reproducing apparatus, information recording method, and information reading method |
EE01529U1 (et) * | 2019-12-27 | 2021-04-15 | Oleg Bõstrov | Sammuva ekskavaatori pöördeplatvorm |
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EP3229235A1 (en) | 2017-10-11 |
US20180336924A1 (en) | 2018-11-22 |
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US10008232B2 (en) | 2018-06-26 |
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