WO2008114782A1 - 記録媒体とそれを用いた記録装置、情報の記録及び消去方法 - Google Patents

記録媒体とそれを用いた記録装置、情報の記録及び消去方法 Download PDF

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Publication number
WO2008114782A1
WO2008114782A1 PCT/JP2008/054917 JP2008054917W WO2008114782A1 WO 2008114782 A1 WO2008114782 A1 WO 2008114782A1 JP 2008054917 W JP2008054917 W JP 2008054917W WO 2008114782 A1 WO2008114782 A1 WO 2008114782A1
Authority
WO
WIPO (PCT)
Prior art keywords
recording
same
recording medium
erasure method
information
Prior art date
Application number
PCT/JP2008/054917
Other languages
English (en)
French (fr)
Inventor
Masato Nakaya
Tomonobu Nakayama
Masakazu Aono
Original Assignee
National Institute For Materials Science
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute For Materials Science filed Critical National Institute For Materials Science
Priority to JP2009505219A priority Critical patent/JP5493210B2/ja
Publication of WO2008114782A1 publication Critical patent/WO2008114782A1/ja

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/152—Fullerenes
    • C01B32/156—After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Semiconductor Memories (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)

Abstract

　所定のエネルギーによって重合、解重合を繰り返すフラーレン分子の性質を利用した、極めて高密度の記録ができる記録媒体を提供し、従来では不可能視されていた高密度記録を可能にする。
PCT/JP2008/054917 2007-03-16 2008-03-17 記録媒体とそれを用いた記録装置、情報の記録及び消去方法 WO2008114782A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009505219A JP5493210B2 (ja) 2007-03-16 2008-03-17 記録装置並びに情報の記録、消去及び読み取り方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007068819 2007-03-16
JP2007-068819 2007-03-16

Publications (1)

Publication Number Publication Date
WO2008114782A1 true WO2008114782A1 (ja) 2008-09-25

Family

ID=39765889

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/054917 WO2008114782A1 (ja) 2007-03-16 2008-03-17 記録媒体とそれを用いた記録装置、情報の記録及び消去方法

Country Status (2)

Country Link
JP (2) JP5493210B2 (ja)
WO (1) WO2008114782A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010143163A1 (en) * 2009-06-11 2010-12-16 International Business Machines Corporation Patterning nano-scale patterns on a film comprising unzipping polymer chains
JP2013187362A (ja) * 2012-03-08 2013-09-19 Toshiba Corp 不揮発性半導体記憶装置
WO2017002798A1 (ja) * 2015-06-30 2017-01-05 昭和電工株式会社 記録媒体、フラーレン薄膜の製造方法、記録再生装置、情報記録方法、及び、情報読み出し方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06271306A (ja) * 1993-03-17 1994-09-27 Nec Corp 数珠状高分子とその構成方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04143943A (ja) * 1990-10-04 1992-05-18 Canon Inc プローブユニット及びこれを備えた記録消去装置、再生装置、記録再生消去装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06271306A (ja) * 1993-03-17 1994-09-27 Nec Corp 数珠状高分子とその構成方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NAKATANI M. ET AL.: "STM Tanshin ni yoru C60 Bunshi no Kyokusho Jugo Oyobi Datsujugo", ABSTRACTS OF MEETING, SURFACE SCIENCE SOCIETY OF JAPAN, vol. 24, 2004, pages 182 *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010143163A1 (en) * 2009-06-11 2010-12-16 International Business Machines Corporation Patterning nano-scale patterns on a film comprising unzipping polymer chains
US8389205B2 (en) 2009-06-11 2013-03-05 International Business Machines Corporation Patterning nano-scale patterns on a film comprising unzipping polymer chains
JP2013187362A (ja) * 2012-03-08 2013-09-19 Toshiba Corp 不揮発性半導体記憶装置
US8866139B2 (en) 2012-03-08 2014-10-21 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
WO2017002798A1 (ja) * 2015-06-30 2017-01-05 昭和電工株式会社 記録媒体、フラーレン薄膜の製造方法、記録再生装置、情報記録方法、及び、情報読み出し方法
CN107077868A (zh) * 2015-06-30 2017-08-18 昭和电工株式会社 记录介质、富勒烯薄膜的制造方法、记录再现装置、信息记录方法及信息读出方法
JPWO2017002798A1 (ja) * 2015-06-30 2017-10-05 昭和電工株式会社 記録媒体、フラーレン薄膜の製造方法、記録再生装置、情報記録方法、及び、情報読み出し方法
US10008232B2 (en) 2015-06-30 2018-06-26 Showa Denko K.K. Recording medium, method of manufacturing fullerene thin film, recording reproducing apparatus, information recording method, and information reading method
CN107077868B (zh) * 2015-06-30 2019-12-31 昭和电工株式会社 记录介质、富勒烯薄膜的制造方法、记录再现装置、信息记录方法及信息读出方法

Also Published As

Publication number Publication date
JP5660478B2 (ja) 2015-01-28
JP5493210B2 (ja) 2014-05-14
JPWO2008114782A1 (ja) 2010-07-08
JP2014099236A (ja) 2014-05-29

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