WO2016206448A1 - 电致发光器件及其制作方法和驱动方法、显示装置 - Google Patents

电致发光器件及其制作方法和驱动方法、显示装置 Download PDF

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WO2016206448A1
WO2016206448A1 PCT/CN2016/079258 CN2016079258W WO2016206448A1 WO 2016206448 A1 WO2016206448 A1 WO 2016206448A1 CN 2016079258 W CN2016079258 W CN 2016079258W WO 2016206448 A1 WO2016206448 A1 WO 2016206448A1
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layer
light emitting
transparent
emitting unit
cathode
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English (en)
French (fr)
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张晓晋
冯翔
谢蒂旎
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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Priority to US15/321,892 priority Critical patent/US10319290B2/en
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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/04Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of a single character by selection from a plurality of characters, or by composing the character by combination of individual elements, e.g. segments using a combination of such display devices for composing words, rows or the like, in a frame with fixed character positions
    • G09G3/06Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of a single character by selection from a plurality of characters, or by composing the character by combination of individual elements, e.g. segments using a combination of such display devices for composing words, rows or the like, in a frame with fixed character positions using controlled light sources
    • G09G3/12Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of a single character by selection from a plurality of characters, or by composing the character by combination of individual elements, e.g. segments using a combination of such display devices for composing words, rows or the like, in a frame with fixed character positions using controlled light sources using electroluminescent elements
    • G09G3/14Semiconductor devices, e.g. diodes
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    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00Circuit arrangements for operating light-emitting diodes [LED]
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
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    • H10K50/805Electrodes
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    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/128Active-matrix OLED [AMOLED] displays comprising two independent displays, e.g. for emitting information from two major sides of the display
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/32Stacked devices having two or more layers, each emitting at different wavelengths
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    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00Control of display operating conditions
    • G09G2320/02Improving the quality of display appearance
    • G09G2320/0233Improving the luminance or brightness uniformity across the screen
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00Control of display operating conditions
    • G09G2320/06Adjustment of display parameters
    • G09G2320/0666Adjustment of display parameters for control of colour parameters, e.g. colour temperature
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10Transparent electrodes, e.g. using graphene
    • H10K2102/101Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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    • H10K2102/301Details of OLEDs
    • H10K2102/302Details of OLEDs of OLED structures
    • H10K2102/3023Direction of light emission
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    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/302Details of OLEDs of OLED structures
    • H10K2102/3023Direction of light emission
    • H10K2102/3026Top emission
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    • H10K50/00Organic light-emitting devices
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    • H10K85/324Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
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    • H10K85/633Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
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    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an electroluminescent device, a manufacturing method thereof, a driving method, and a display device.
  • the stacked device is very easy to generate excimer complex quenching at the layer interface, and there is a problem that the color temperature change is uncontrollable as the brightness of the device increases; the tandem device is difficult to avoid extra due to poor contact of each luminescent layer. Power consumption, at the same time, series devices are also difficult to adjust the white color temperature.
  • controllable and efficient light output of the color in the same device structure has very important significance and application value in both display and illumination fields.
  • An object of the present invention is to provide an electroluminescent device, a manufacturing method thereof, a driving method, and a display device, which solve the technical problem that the color temperature of the conventional electroluminescent device is difficult to adjust and the luminous efficiency is low.
  • an electroluminescent device comprising:
  • the first light emitting unit and the second light emitting unit are respectively disposed on two sides of the transparent substrate, and the first light emitting unit and the second light emitting unit have the same light emitting direction and are respectively connected to a control circuit.
  • the first lighting unit is a bottom lighting unit
  • the second lighting unit is a top lighting unit
  • the first light emitting unit includes a first transparent anode, a first light emitting layer, and a total reflection cathode disposed in sequence from a side close to the transparent substrate to a side away from the transparent substrate;
  • the second light emitting The unit includes a second transparent anode, a second luminescent layer, and a transparent cathode disposed in order from one side to the far side of the transparent substrate.
  • the first transparent anode and the second transparent anode are electrically connected.
  • the transparent substrate has a refractive index of 1.7-2.
  • the first luminescent layer is a long-wave organic luminescent material layer, the first luminescent layer is capable of emitting light having a wavelength of 561-760 nm; the second luminescent layer is a short-wave organic luminescent material layer, and the second illuminating layer The layer is capable of emitting light having a wavelength of 380-560 nm.
  • the first luminescent layer is a yellow organic luminescent material layer
  • the second luminescent layer is a blue organic luminescent material layer.
  • the first light emitting unit further includes a first hole injection layer and a first hole transport layer disposed between the first transparent anode and the first light emitting layer, and is disposed at the total reflection a first electron injecting layer and a first electron transporting layer between the cathode and the first light emitting layer;
  • the second light emitting unit further includes a second hole injecting layer and a second hole transporting layer disposed between the second transparent anode and the second light emitting layer, and disposed on the transparent cathode and the a second electron injecting layer and a second electron transporting layer between the second light emitting layers.
  • the first electron injection layer and the first electron transport layer together constitute a first electron assist layer
  • the second electron injection layer and the second electron transport layer together constitute a second electron assist layer
  • a first light emitting unit and a second light emitting unit are respectively formed on two sides of the transparent substrate, wherein the first light emitting unit and the second light emitting unit have the same light emitting direction and are respectively connected to a control circuit.
  • the material for forming the transparent substrate comprises polyimide or polyimide/titanium dioxide composite material, and the transparent substrate has a thickness of 100-1000 ⁇ m.
  • the step of fabricating the first lighting unit comprises:
  • a first transparent anode, a first luminescent layer, and a totally reflective cathode are sequentially formed on one side of the transparent substrate.
  • the material for fabricating the first transparent anode comprises indium tin oxide, and the first transparent anode has a thickness of 80-160 nm.
  • the first luminescent layer is a yellow organic luminescent material layer, and the material for forming the first luminescent layer comprises a yellow fluorescent material or a yellow phosphorescent material, and the first luminescent layer has a thickness of 20-50 nm.
  • the total reflection cathode is a metal cathode
  • the material for fabricating the total reflection cathode includes an alloy of any one or any of magnesium, silver and aluminum, and the total reflection cathode has a thickness of 80 to 200 nm.
  • the manufacturing method further comprises performing between forming the first transparent anode and the first luminescent layer:
  • a first electron transport layer and a first electron injection layer are formed.
  • the material for forming the first hole injecting layer comprises phthalocyanine, zinc phthalocyanine, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12 Any one of hexaazatriphenylene and 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, said first hole injection
  • the thickness of the layer is 5-40 nm.
  • the material for forming the first hole transporting layer comprises N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'- Diamine or 2,2',7,7'-tetrakis(diphenylamino)-9,9'-spirobifluorene, the first hole transport layer having a thickness of 10 to 100 nm.
  • the first electron injection layer and the first electron transport layer together constitute a first electron assist layer
  • the material for fabricating the first electron assist layer comprises Alq3:Li or BPhen:Cs
  • the first electron The thickness of the auxiliary layer is 10-100 nm.
  • the step of fabricating the second lighting unit comprises:
  • a second transparent anode, a second luminescent layer, and a transparent cathode are sequentially formed on the other side of the transparent substrate.
  • the material for fabricating the second transparent anode comprises indium tin oxide, and the thickness of the second transparent anode is 80-160 nm.
  • the second luminescent layer is a blue organic luminescent material layer, and the material for fabricating the second luminescent layer comprises a blue fluorescent material or a blue phosphorescent material, and the second luminescent layer has a thickness of 20-50 nm.
  • the material for forming the transparent cathode comprises any one of lithium fluoride, aluminum, indium tin oxide and lithium, or the material for forming the transparent cathode comprises a lithium/indium tin oxide composite material,
  • the thickness of the transparent cathode is 0.5-1 nm
  • the transparent cathode When the material of the transparent cathode is aluminum, the transparent cathode has a thickness of 1-3 nm;
  • the transparent cathode When the material of the transparent cathode is lithium, the transparent cathode has a thickness of 0.5-1.5 nm;
  • the thickness of the transparent cathode is 20-50 nm.
  • the manufacturing method further comprises performing between forming the second transparent anode and the second luminescent layer:
  • a second electron transport layer and a second electron injection layer are formed.
  • the material for forming the second hole injecting layer comprises phthalocyanine, zinc phthalocyanine, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12 Any one of hexaazatriphenylene and 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, said second hole injection
  • the thickness of the layer is 5-40 nm.
  • the material for forming the second hole transport layer comprises N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'- Diamine or 2,2',7,7'-tetrakis(diphenylamino)-9,9'-spirobifluorene, the second hole transport layer having a thickness of 10 to 100 nm.
  • the second electron injection layer and the second electron transport layer together constitute a second electron assist layer
  • the material for fabricating the second electron assisting layer includes Alq3:Li or BPhen:Cs, and the second electron assisting layer has a thickness of 10 to 100 nm.
  • a display device comprising a plurality of pixel units, each of which is provided with an electroluminescent device, the electroluminescent device being provided for the present invention
  • each of the pixel units is further provided with two control circuits independent of each other, and two of the control circuits in the pixel unit are respectively used to control the first in the pixel unit.
  • a light emitting unit and the second light emitting unit emit light.
  • a driving method of an electroluminescent device which is the above-mentioned electroluminescent device provided by the present invention, the driving method comprising:
  • the first control circuit and the control circuit are mutually independent circuits.
  • the first light emitting unit includes a first transparent anode, a first light emitting layer, and a total reflection cathode disposed in sequence from a side close to the transparent substrate to a side away from the transparent substrate;
  • the second light emitting The unit includes a second transparent anode, a second luminescent layer and a transparent cathode disposed in sequence from a side close to the transparent substrate to a side away from the transparent substrate;
  • the driving method further includes:
  • a voltage output by the first control circuit to the first transparent anode is equal to a voltage output by the second control circuit to the second transparent anode, such that the first transparent anode and the second transparent anode Equipotential.
  • the invention adopts a parallel device structure, realizes independent control of two light-emitting units in a single electroluminescent device, is beneficial to separately optimizing and tuning each light-emitting unit, can not only realize adjustable color temperature, but also can obtain more devices. High luminous efficiency.
  • the present invention can produce a transparent substrate using a polymer having a refractive index adapted to the luminescent material, thereby reducing optical waveguide loss within the device, and enabling flexible device display.
  • FIG. 1 is a schematic structural view of an electroluminescent device according to an embodiment of the present invention.
  • a 10-transparent substrate a 1-first light-emitting unit; a 2-second light-emitting unit; 11-a first transparent anode; a 12-total reflective cathode; 13-a first light-emitting layer; Injection layer; 15-first hole transport layer; 16-first electron injection layer; 17-first electron transport layer; 18-first control circuit; 21-second transparent anode; 22-transparent cathode; a second light-emitting layer; 24 - a second hole injection layer; 25 - a second hole transport layer; 26 - a second electron injection layer; 27 - a second electron transport layer; 28 - a second control circuit.
  • the present invention provides an electroluminescent device.
  • the electroluminescent device includes a transparent substrate 10, and first and second light emitting units 1 and 2 respectively disposed on opposite sides of the transparent substrate 10.
  • the first light emitting unit 1 and the second light emitting unit 2 have the same light emitting direction and are respectively connected to a control circuit.
  • the first lighting unit 1 and the second lighting unit 2 can be separately controlled by the first control circuit 18 and the second control circuit 28 which are independent of each other.
  • the direction of light propagation herein refers to the direction in which light passes through the transparent substrate 10, such as the direction indicated by the hollow arrow in FIG.
  • the light propagation direction may also be opposite to the direction marked in FIG. 1, and details are not described herein again.
  • the invention adopts a parallel device structure, and realizes independent control of two light emitting units in a single electroluminescent device.
  • the light emitted by the two light-emitting units needs to generate white light after being superimposed.
  • the white color temperature can be adjusted, and the device can be obtained more. High luminous efficiency.
  • the optimization and tuning here refers to selecting and setting the materials and characteristics of each layer structure in the light-emitting unit, so that the light emitted by the two light-emitting units is superimposed and superimposed, and the output brightness of the two light-emitting units is tuned by independent driving. And color coordinate distribution characteristics, It is found that the color temperature of the shooting light is adjustable.
  • the present invention does not limit the specific stacking direction of the transparent substrate 10, the first light emitting unit 1 and the second light emitting unit 2.
  • the transparent substrate 10, the first light emitting unit 1 and the second light emitting unit 2 are disposed in parallel with each other, and the transparent substrate 10, the first light emitting unit 1, and the second light emitting unit 2 are vertically disposed.
  • the first light emitting unit 1 is a bottom light emitting unit
  • the second light emitting unit 2 is a top light emitting unit, so that the light propagates in a direction indicated by a hollow arrow in FIG.
  • the first light emitting unit 1 can also be set as a top light emitting unit
  • the second light emitting unit 2 can be set as a bottom light emitting unit, thereby changing the light emitting direction of the electroluminescent device.
  • the white electroluminescent device it is sufficient that the light emitted from the first light emitting unit 1 and the light emitted from the second light emitting unit 2 are superimposed to generate white light.
  • the first light emitting unit 1 includes a first transparent anode 11 , a first light emitting layer 13 and a total reflection cathode 12 which are sequentially disposed from a side of the first light emitting unit 1 close to the transparent substrate 10 to a side away from the transparent substrate 10 . To achieve the bottom light structure.
  • the second light emitting unit 2 includes a second transparent anode 21, a second light emitting layer 23 and a transparent cathode 22 which are sequentially disposed from a side of the second light emitting unit 2 close to the transparent substrate 10 to a side away from the transparent substrate 10 to achieve a top Light structure.
  • the second light emitting unit 2 is actually a double-sided light transmitting structure, and the purpose of the design is to enable the light emitted by the first light emitting unit 1 to pass through the second light emitting unit 2 and to communicate with the second light emitting unit.
  • the light emitted by the two is superimposed, and the light emitted from the two light-emitting units is simultaneously emitted from the transparent cathode 22 of the second light-emitting unit 2, thereby realizing the effect of white light.
  • the first control circuit 18 is electrically connected to the first transparent anode 11 and the total reflection cathode 12, respectively, to control the first light-emitting unit 1 to emit light; the second control circuit 28 and the second transparent anode 21 and the transparent cathode 22, respectively. Electrically connected to control the second light emitting unit 2 to emit light.
  • the first control circuit 18 and the second control circuit 28 may respectively control the first light emitting unit 1 and the second light emitting unit 2 to alternately emit light to reduce power consumption, or the first control circuit 18 and the second control circuit
  • the first light emitting unit 1 and the second light emitting unit 2 can be driven to simultaneously emit light to increase the brightness.
  • the first transparent anode 11 and the second transparent anode 21 are preferably used. Electrical connection is made to maintain an equipotential between the first transparent anode 11 and the second transparent anode 21.
  • the present invention can fabricate the transparent substrate 10 using a polymer having a refractive index compatible with the luminescent material in the two light-emitting units.
  • the refractive index of the transparent substrate 10 is preferably 1.7-2, so as to effectively reduce the optical waveguide loss in the device and improve the luminous efficiency of the device.
  • the material of the transparent substrate 10 is made of polyimide or polyimide/titania composite, and the thickness of the transparent substrate 10 is preferably from 100 to 1000 ⁇ m.
  • the transparent substrate 10 can be made of a flexible material so that the electroluminescent device provided by the present invention has the characteristics of flexible display.
  • the polyimide is a flexible material
  • the transparent substrate 10 is made of polyimide to realize a flexible electroluminescent device.
  • the material of the first luminescent layer 13 and the second luminescent layer 23 may not be specifically limited, and the material of the first luminescent layer 13 and/or the second luminescent layer 23 may be selected from the group consisting of inorganic luminescent materials or organic luminescent materials. .
  • the first luminescent layer 13 is a long-wave organic luminescent material layer, and the first luminescent layer 13 can emit light having a wavelength of 561-760 nm (ie, covering red yellow Light range);
  • the second light-emitting layer 23 is a short-wave organic light-emitting material layer, and the second light-emitting layer 23 is capable of emitting light having a wavelength of 380-560 nm (ie, covering a blue-green light range). Therefore, when the light emitted from the first light-emitting layer 13 and the light emitted from the second light-emitting layer 23 are superimposed, the electroluminescent device can be made to have a wide color temperature adjustment range.
  • the first luminescent layer 13 may be a yellow organic luminescent material layer, and the material for forming the first luminescent layer 13 includes a yellow fluorescent material or a yellow phosphorescent material, for example, CPB: (bt) Ir (acac), by evaporation or the like. Preparation was carried out. Also, the thickness of the first light-emitting layer 13 is 20 to 50 nm.
  • the second luminescent layer 23 may be a blue organic luminescent material layer, and the second layer is fabricated.
  • the material of the light-emitting layer 23 includes a blue fluorescent material or a blue phosphorescent material, for example, CPB: FIrpic, which is prepared by evaporation or the like.
  • the thickness of the second light-emitting layer 23 is 20-50 nm.
  • the first luminescent layer 13 and the second luminescent layer 13 may also use other color luminescent materials.
  • the second luminescent layer 23 may be a green organic luminescent material layer, and the material for forming the second luminescent layer 23 may be CPB:Ir(ppy) 3 , which will not be described herein.
  • the material for forming the first transparent anode 11 and/or the second transparent anode 21 comprises indium tin oxide (ITO), which is prepared by magnetron sputtering or the like.
  • ITO indium tin oxide
  • the thickness of the first transparent anode 11 and/or the second transparent anode 21 is 80-160 nm, preferably 100 nm.
  • the total reflection cathode 12 is a metal cathode, and the material for making the total reflection cathode 12 includes an alloy of any one or any of magnesium, silver and aluminum, for example, Mg: Ag or Al, by evaporation or the like. preparation. Also, the total reflection cathode 12 has a thickness of 80 to 200 nm.
  • the material for forming the transparent cathode 22 includes any one of lithium fluoride (LiF), aluminum (Al), indium tin oxide (ITO), and lithium (Li), or the material for forming the transparent cathode 22 includes lithium/oxidation.
  • LiF lithium fluoride
  • Al aluminum
  • ITO indium tin oxide
  • Li lithium
  • Li/ITO Indium tin
  • the thickness of the transparent cathode 22 is 0.5-1 nm, preferably 0.5 nm;
  • the thickness of the transparent cathode 22 is 1-3 nm;
  • the thickness of the transparent cathode 22 is 0.5-1.5 nm, preferably 1 nm;
  • the thickness of the transparent cathode 22 is 20-50 nm.
  • the light transmittance of the transparent cathode 22 should preferably reach 80% to 90%.
  • the first light emitting unit 1 further includes a first hole injection layer 14 and a first hole transport layer 15 disposed between the first transparent anode 11 and the first light emitting layer 13, and a setting The first electron injection layer 16 and the first electron transport layer 17 between the total reflection cathode 12 and the first light-emitting layer 13.
  • the second light emitting unit 2 further includes a second hole injection layer 24 and a second hole transport layer 25 disposed between the second transparent anode 21 and the second light emitting layer 23, and a transparent cathode 22 and a second light emitting layer.
  • a second electron injection layer 26 and a second electron transport layer 27 are between 23.
  • the first hole injection layer 14 is used to modify the first transparent anode 11 to improve hole injection efficiency and improve defects on the surface of the first transparent anode 11. Accordingly, the second hole injection layer 24 serves to modify the second transparent anode 21 to improve hole injection efficiency and improve defects of the surface of the second transparent anode 21.
  • the material for forming the first hole injection layer 14 and/or the second hole injection layer 24 includes phthalocyanine (CuPc), zinc phthalocyanine (ZnPc), 2, 3, 6, 7, 10, 11- Hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene (HAT-CN) and 2,3,5,6-tetrafluoro-7,7',8,8'-four Any one of cyanodimethyl p-benzoquinone (a-NPD: F 4 -TCNQ).
  • the thickness of the first hole injection layer 14 is controlled to 5 to 40 nm
  • the thickness of the second hole injection layer 24 is controlled to be 5 to 40 nm.
  • the first hole transport layer 15 is an energy level matching layer capable of promoting hole transport into the first light emitting layer 13. Accordingly, the second hole transport layer 25 is an energy level matching layer capable of promoting hole transport into the second light emitting layer 23.
  • the material for forming the first hole transport layer 15 and/or the second hole transport layer 25 comprises N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1' -biphenyl-4-4'-diamine (NPB) or 2,2',7,7'-tetrakis(diphenylamino)-9,9'-spirobifluorene (Spiro-TAD).
  • the thickness of the first hole transport layer 15 and/or the second hole transport layer 25 is controlled to be 10 to 100 nm.
  • the first electron assisting layer and the second electron assisting layer function to reduce the interface barrier of electrons during transport.
  • the material for fabricating the first electron assisting layer and/or the second electron assisting layer comprises Alq3:Li or BPhen:Cs, the first electron assisting layer and/or the second electron assisting layer
  • the electrical conductivity is preferably 10 -5 S/cm.
  • the first electron assisting layer and/or the second electron assisting layer have a thickness of 10 to 100 nm.
  • the invention also provides a method for fabricating an electroluminescent device, comprising the following steps:
  • a first light emitting unit and a second light emitting unit are respectively formed on two sides of the transparent substrate, wherein the first light emitting unit and the second light emitting unit have the same light emitting direction and are respectively connected to a control circuit.
  • the device fabricated by the invention has a parallel structure, realizes independent control of two light-emitting units in a single electroluminescent device, is beneficial to separately optimizing and tuning each light-emitting unit, can not only realize adjustable color temperature, but also can make the device Get higher luminous efficiency.
  • the present invention can produce a transparent substrate using a polymer having a refractive index adapted to the luminescent material, thereby reducing optical waveguide loss within the device, and enabling flexible device display.
  • the material for forming the transparent substrate comprises polyimide or polyimide/titanium dioxide composite material, and the transparent substrate has a thickness of 100-1000 ⁇ m.
  • the step of fabricating the first lighting unit comprises:
  • a first transparent anode, a first luminescent layer, and a totally reflective cathode are sequentially formed on one side of the transparent substrate.
  • the material for fabricating the first transparent anode comprises indium tin oxide, and the first transparent anode has a thickness of 80-160 nm.
  • the first luminescent layer is a yellow organic luminescent material layer, and the material for forming the first luminescent layer comprises a yellow fluorescent material or a yellow phosphorescent material, and the first luminescent layer has a thickness of 20-50 nm.
  • the total reflection cathode is a metal cathode
  • the material for fabricating the total reflection cathode includes an alloy of any one or any of magnesium, silver and aluminum, and the total reflection cathode has a thickness of 80 to 200 nm.
  • the manufacturing method further comprises performing between forming the first transparent anode and the first luminescent layer:
  • a first electron transport layer and a first electron injection layer are formed.
  • the material for forming the first hole injecting layer comprises phthalocyanine, zinc phthalocyanine, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12 Any one of hexaazatriphenylene and 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, said first hole injection Layer thickness The degree is 5-40 nm.
  • the material for forming the first hole transporting layer comprises N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'- Diamine or 2,2',7,7'-tetrakis(diphenylamino)-9,9'-spirobifluorene, the first hole transport layer having a thickness of 10 to 100 nm.
  • the first electron injection layer and the first electron transport layer together constitute a first electron assist layer
  • the material for fabricating the first electron assist layer comprises Alq3:Li or BPhen:Cs
  • the first electron The thickness of the auxiliary layer is 10-100 nm.
  • the step of fabricating the second lighting unit comprises:
  • a second transparent anode, a second luminescent layer, and a transparent cathode are sequentially formed on the other side of the transparent substrate.
  • the material for fabricating the second transparent anode comprises indium tin oxide, and the thickness of the second transparent anode is 80-160 nm.
  • the second luminescent layer is a blue organic luminescent material layer, and the material for fabricating the second luminescent layer comprises a blue fluorescent material or a blue phosphorescent material, and the second luminescent layer has a thickness of 20-50 nm.
  • the material for forming the transparent cathode comprises any one of lithium fluoride, aluminum, indium tin oxide and lithium, or the material for forming the transparent cathode comprises a lithium/indium tin oxide composite material,
  • the thickness of the transparent cathode is 0.5-1 nm
  • the transparent cathode When the material of the transparent cathode is aluminum, the transparent cathode has a thickness of 1-3 nm;
  • the transparent cathode When the material of the transparent cathode is lithium, the transparent cathode has a thickness of 0.5-1.5 nm;
  • the thickness of the transparent cathode is 20-50 nm.
  • the manufacturing method further comprises performing between forming the second transparent anode and the second luminescent layer:
  • a second electron transport layer and a second electron injection layer are formed.
  • the material for forming the second hole injecting layer comprises phthalocyanine, zinc phthalocyanine, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12 Any one of hexaazatriphenylene and 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, said second hole injection
  • the thickness of the layer is 5-40 nm.
  • the material for forming the second hole transport layer comprises N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'- Diamine or 2,2',7,7'-tetrakis(diphenylamino)-9,9'-spirobifluorene, the second hole transport layer having a thickness of 10 to 100 nm.
  • the second electron injection layer and the second electron transport layer together constitute a second electron assist layer
  • the material for fabricating the second electron assisting layer includes Alq3:Li or BPhen:Cs, and the second electron assisting layer has a thickness of 10 to 100 nm.
  • the present invention also provides a display device comprising a plurality of pixel units, each of which is provided with an electroluminescent device, and the electroluminescent device is the above-mentioned electroluminescent device provided by the present invention. .
  • Two control circuits independent of each other are disposed in each of the pixel units, and two of the control circuits in the pixel unit are respectively used to control the first light emitting unit 1 and the second light emitting unit in the pixel unit. 2 light.
  • the two control circuits are a first control circuit 18 and a second control circuit 28, respectively, the first lighting unit 1 is controlled by the first control circuit 18, and the second lighting unit 2 is controlled by the second control circuit. 28 for control.
  • a white light organic electroluminescent device will be taken as an example to describe the fabrication process of the electroluminescent device provided by the present invention.
  • an ITO film having a thickness of about 100 nm is prepared as a first transparent anode 11 and a second transparent anode 21 on both sides of a transparent substrate 10 (thickness: 100 to 1000 ⁇ m) of a polymer material by magnetron sputtering or the like.
  • the transparent substrate 10 used in the present invention should have a refractive index of between 1.7 and 2, and has good thermal stability, and the material thereof can be selected. From PI or PI/TiO2 composites, etc.
  • the bottom light unit is then prepared, including:
  • a first hole injecting layer 14 is prepared outside the first transparent anode 11, and the layer functions to improve hole injection efficiency and improve ITO layer defects.
  • Materials such as CuPc, ZnPc, HAT-CN, a-NPD:F 4 may be used.
  • the first hole transport layer 15 is prepared outside the first hole injection layer 14 to promote hole transport into the light-emitting layer.
  • the first hole transport layer 15 may be made of materials such as NPB, Spiro-TAD, etc., and has a thickness of 10 ⁇ . 100nm;
  • the first light-emitting layer 13 is prepared outside the first hole transport layer 15, and is prepared by using a yellow light organic light-emitting system material, such as CPB:(bt)Ir(acac), and the thickness is controlled at 20-50 nm;
  • a yellow light organic light-emitting system material such as CPB:(bt)Ir(acac)
  • the first electron assisting layer Preparing a first electron assisting layer (corresponding to a combination of the first electron injecting layer 16 and the first electron transporting layer 17) outside the first light emitting layer 13 to reduce an interface barrier during electron transport, the first electron assisting layer
  • the material may be selected from Alq3: Li, BPhen: Cs, etc., the conductivity is preferably about 10 -5 S/cm, and the thickness is controlled at 10 to 100 nm;
  • a total reflection cathode 12 is prepared on the outside of the first electron assist layer, and is formed by vapor deposition using Mg:Ag or Al material, and the thickness is controlled to be 80 to 200 nm.
  • the top illumination unit is then prepared, including:
  • a second hole injecting layer 24 is prepared on the outer side of the second transparent anode 21, and the layer functions to improve hole injection efficiency and improve ITO layer defects, which can be achieved by coating or evaporation.
  • optional materials such as CuPc, ZnPc, HAT-CN, a-NPD: F 4 -TCNQ, etc., are formed by evaporation or coating, and the thickness is controlled at 5 to 40 nm;
  • a second hole transport layer 25 is prepared outside the second hole injection layer 24 to promote hole transport into the light-emitting layer.
  • the second hole transport layer 25 may be made of materials such as NPB, Spiro-TAD, etc., and has a thickness of 10 ⁇ . 100nm;
  • a blue organic light-emitting system material such as CBP: FIrpic, having a thickness controlled at 20-50 nm, prepared by evaporation;
  • a second electron assisting layer (corresponding to the combination of the second electron injecting layer 26 and the second electron transporting layer 27) is prepared outside the second light emitting layer 23 to reduce the interface barrier during electron transport, and the second electron assisting layer
  • the material may be selected from Alq3: Li, BPhen: Cs, etc., the conductivity is preferably about 10 -5 S/cm, and the thickness is controlled at 10 to 100 nm;
  • the transparent cathode 22 is prepared outside the second electron assisting layer, and may be LiF (preferably having a thickness of 0.5 nm), Al (preferably having a thickness of 1 to 3 nm), ITO (preferably having a thickness of 20 to 50 nm), or a Li/ITO composite material.
  • the thickness is 20 to 50 nm), and the transmittance should preferably be 80% to 90%.
  • the electroluminescent device constructed in the above manner can realize the white light output with high luminous efficiency and color temperature adjustable in cooperation with the independently controlled first control circuit 18 and second control circuit 28 provided externally.
  • the present invention also provides a driving method of an electroluminescent device, which is the above-mentioned electroluminescent device provided by the present invention, and the driving method includes:
  • the first control circuit and the control circuit are mutually independent circuits.
  • the first light emitting unit includes a first transparent anode, a first light emitting layer, and a total reflection cathode disposed in sequence from a side close to the transparent substrate to a side away from the transparent substrate;
  • the second light emitting The unit includes a second transparent anode, a second luminescent layer and a transparent cathode disposed in sequence from a side close to the transparent substrate to a side away from the transparent substrate;
  • the driving method further includes:
  • a voltage output by the first control circuit to the first transparent anode is equal to a voltage output by the second control circuit to the second transparent anode, such that the first transparent anode and the second transparent anode Equipotential.

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Abstract

一种电致发光器件及其制作方法和驱动方法、显示装置。该电致发光器件包括透明基板(10);分别设置在透明基板(10)两侧的第一发光单元(1)和第二发光单元(2),第一发光单元(1)和第二发光单元(2)的发光方向相同且分别连接一控制电路(18,28)。采用并联式器件结构实现了单个电致发光器件中两个发光单元的独立控制,有利于对每个发光单元分别进行优化和调谐,不仅能够实现色温可调,而且可以使器件获得更高的发光效率。可以采用折射率与发光材料适配的聚合物制作透明基板(10),从而降低器件内的光波导损失,并且能够实现柔性器件显示。

Description

电致发光器件及其制作方法和驱动方法、显示装置 技术领域
本发明涉及显示技术领域,尤其涉及一种电致发光器件及其制作方法和驱动方法、显示装置。
背景技术
现有的电致发光器件主要为叠层型器件和串联式器件。受到器件结构的限制,上述两种器件具有如下缺陷:
叠层型器件极易在层界面处产生激基复合物猝灭,且随着器件亮度的增加,存在色温变化不可控的问题;串联式器件很难避免由于各发光层接触不良而引起的额外功耗,同时,串联式器件也难以实现对白光色温的调节。
因此,在同一个器件结构中实现颜色的可控和高效的光输出,无论在显示领域还是照明领域都具有非常重要的意义和应用价值。
发明内容
本发明的目的在于提供一种电致发光器件及其制作方法和驱动方法、显示装置,以解决现有的电致发光器件色温难以调节、发光效率低的技术问题。
为解决上述技术问题,作为本发明的第一个方面,提供一种电致发光器件,包括:
透明基板;
分别设置在所述透明基板两侧的第一发光单元和第二发光单元,所述第一发光单元和所述第二发光单元的发光方向相同且分别连接一控制电路。
优选地,所述第一发光单元为底发光单元,所述第二发光单元为顶发光单元。
优选地,所述第一发光单元包括从靠近所述透明基板的一侧到远离所述透明基板的一侧依次设置的第一透明阳极、第一发光层和全反射阴极;所述第二发光单元包括从靠近所述透明基板的一侧到远离侧依次设置的第二透明阳极、第二发光层和透明阴极。
优选地,所述第一透明阳极和所述第二透明阳极之间电连接。
优选地,所述透明基板的折射率为1.7-2。
优选地,所述第一发光层为长波有机发光材料层,所述第一发光层能够发出波长为561-760nm的光;所述第二发光层为短波有机发光材料层,所述第二发光层能够发出波长为380-560nm的光。
优选地,所述第一发光层为黄光有机发光材料层,所述第二发光层为蓝光有机发光材料层。
优选地,所述第一发光单元还包括设置在所述第一透明阳极和所述第一发光层之间的第一空穴注入层和第一空穴传输层、以及设置在所述全反射阴极和所述第一发光层之间的第一电子注入层和第一电子传输层;
所述第二发光单元还包括设置在所述第二透明阳极和所述第二发光层之间的第二空穴注入层和第二空穴传输层、以及设置在所述透明阴极和所述第二发光层之间的第二电子注入层和第二电子传输层。
优选地,所述第一电子注入层和所述第一电子传输层共同构成第一电子辅助层,所述第二电子注入层和所述第二电子传输层共同构成第二电子辅助层。
作为本发明的第二个方面,还提供一种电致发光器件的制作方法,包括以下步骤:
提供透明基板;
在所述透明基板的两侧分别制作第一发光单元和第二发光单元,其中,所述第一发光单元和所述第二发光单元的发光方向相同且分别连接一控制电路。
优选地,制作所述透明基板的材料包括聚酰亚胺或者聚酰亚胺/二氧化钛复合材料,所述透明基板的厚度为100-1000μm。
优选地,制作所述第一发光单元的步骤包括:
在所述透明基板的一侧依次形成第一透明阳极、第一发光层和全反射阴极。
优选地,制作所述第一透明阳极的材料包括氧化铟锡,所述第一透明阳极的厚度为80-160nm。
优选地,所述第一发光层为黄光有机发光材料层,制作所述第一发光层的材料包括黄色荧光材料或者黄色磷光材料,所述第一发光层的厚度为20-50nm。
优选地,所述全反射阴极为金属阴极,制作所述全反射阴极的材料包括镁、银和铝中的任意一者或者任意几者的合金,所述全反射阴极的厚度为80-200nm。
优选地,所述制作方法还包括在形成所述第一透明阳极和所述第一发光层之间进行的:
形成第一空穴注入层和第一空穴传输层;
以及,在形成所述第一发光层和所述全反射阴极之间进行的:
形成第一电子传输层和第一电子注入层。
优选地,制作所述第一空穴注入层的材料包括酞菁酮、酞菁锌、2,3,6,7,10,11-六氰基-1,4,5,8,9,12-六氮杂苯并菲和2,3,5,6-四氟-7,7',8,8'-四氰二甲基对苯醌中的任意一者,所述第一空穴注入层的厚度为5-40nm。
优选地,制作所述第一空穴传输层的材料包括N,N′-二(1-萘基)-N,N′-二苯基-1,1′-联苯-4-4′-二胺或者2,2',7,7'-四(二苯基氨基)-9,9'-螺双芴,所述第一空穴传输层的厚度为10-100nm。
优选地,所述第一电子注入层和所述第一电子传输层共同构成第一电子辅助层,制作所述第一电子辅助层的材料包括Alq3:Li或者BPhen:Cs,所述第一电子辅助层的厚度为10-100nm。
优选地,制作所述第二发光单元的步骤包括:
在所述透明基板的另一侧依次形成第二透明阳极、第二发光层和透明阴极。
优选地,制作所述第二透明阳极的材料包括氧化铟锡,所述第二透明阳极的厚度为80-160nm。
优选地,所述第二发光层为蓝光有机发光材料层,制作所述第二发光层的材料包括蓝色荧光材料或者蓝色磷光材料,所述第二发光层的厚度为20-50nm。
优选地,制作所述透明阴极的材料包括氟化锂、铝、氧化铟锡和锂中的任意一者,或者制作所述透明阴极的材料包括锂/氧化铟锡复合材料,
当制作所述透明阴极的材料为氟化锂时,所述透明阴极的厚度为0.5-1nm;
当制作所述透明阴极的材料为铝时,所述透明阴极的厚度为1-3nm;
当制作所述透明阴极的材料为锂时,所述透明阴极的厚度为0.5-1.5nm;
当制作所述透明阴极的材料为氧化铟锡或者锂/氧化铟锡复合材料时,所述透明阴极的厚度为20-50nm。
优选地,所述制作方法还包括在形成所述第二透明阳极和所述第二发光层之间进行的:
形成第二空穴注入层和第二空穴传输层;
以及,在形成所述第二发光层和所述透明阴极之间进行的:
形成第二电子传输层和第二电子注入层。
优选地,制作所述第二空穴注入层的材料包括酞菁酮、酞菁锌、2,3,6,7,10,11-六氰基-1,4,5,8,9,12-六氮杂苯并菲和2,3,5,6-四氟-7,7',8,8'-四氰二甲基对苯醌中的任意一者,所述第二空穴注入层的厚度为5-40nm。
优选地,制作所述第二空穴传输层的材料包括N,N′-二(1-萘基)-N,N′-二苯基-1,1′-联苯-4-4′-二胺或者2,2',7,7'-四(二苯基氨基)-9,9'-螺双芴,所述第二空穴传输层的厚度为10-100nm。
优选地,所述第二电子注入层和所述第二电子传输层共同构成第二电子辅助层;
制作所述第二电子辅助层的材料包括Alq3:Li或者BPhen:Cs,所述第二电子辅助层的厚度为10-100nm。
作为本发明的第三个方面,还提供一种显示装置,所述显示装置包括多个像素单元,每个像素单元内均设置有电致发光器件,所述电致发光器件为本发明所提供的上述电致发光器件,每个所述像素单元内还设置有相互独立的两个控制电路,一个所述像素单元内的两个所述控制电路分别用于控制该像素单元内的所述第一发光单元和所述第二发光单元发光。
作为本发明的第四个方面,还提供一种电致发光器件的驱动方法,所述电致发光器件为本发明所提供的上述电致发光器件,所述驱动方法包括:
通过第一控制电路驱动所述第一发光单元发光;
通过第二控制电路驱动所述第二发光单元发光;
其中,所述第一控制电路和所述控制电路为相互独立的电路。
优选地,所述第一发光单元包括从靠近所述透明基板的一侧到远离所述透明基板的一侧依次设置的第一透明阳极、第一发光层和全反射阴极;所述第二发光单元包括从靠近所述透明基板的一侧到远离所述透明基板的一侧依次设置的第二透明阳极、第二发光层和透明阴极;
所述驱动方法还包括:
所述第一控制电路向所述第一透明阳极输出的电压与所述第二控制电路向所述第二透明阳极输出的电压相等,以使得所述第一透明阳极和所述第二透明阳极等电位。
本发明采用并联式器件结构,实现了单个电致发光器件中两个发光单元的独立控制,有利于对每个发光单元分别进行优化和调谐,不仅能够实现色温可调,而且可以使器件获得更高的发光效率。此外,本发明可以采用折射率与发光材料适配的聚合物制作透明基板,从而降低器件内的光波导损失,并且能够实现柔性器件显示。
附图说明
附图是用来提供对本发明的进一步理解,并且构成说明书的一部分,与下面的具体实施方式一起用于解释本发明,但并不构成对本 发明的限制。
图1是本发明实施例所提供的电致发光器件的结构示意图。
在附图中,10-透明基板;1-第一发光单元;2-第二发光单元;11-第一透明阳极;12-全反射阴极;13-第一发光层;14-第一空穴注入层;15-第一空穴传输层;16-第一电子注入层;17-第一电子传输层;18-第一控制电路;21-第二透明阳极;22-透明阴极;23-第二发光层;24-第二空穴注入层;25-第二空穴传输层;26-第二电子注入层;27-第二电子传输层;28-第二控制电路。
具体实施方式
以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是,此处所描述的具体实施方式仅用于说明和解释本发明,并不用于限制本发明。
本发明提供了一种电致发光器件,如图1所示,所述电致发光器件包括透明基板10、和分别设置在透明基板10两侧的第一发光单元1和第二发光单元2,第一发光单元1和第二发光单元2的发光方向相同且分别连接一控制电路。
例如在图1中,第一发光单元1和第二发光单元2能够由相互独立的第一控制电路18和第二控制电路28分别进行控制。这里的光传播方向是指光线通过透明基板10时的方向,例如图1中空心箭头所指的方向。显然,根据第一发光单元1和第二发光单元2具体结构的不同,光传播方向也可以与图1所标的方向相反,此处不再赘述。
本发明采用并联式器件结构,实现了单个电致发光器件中两个发光单元的独立控制。对于白光电致发光器件而言,两个发光单元发出的光叠加后需要产生白光,本发明通过对两个发光单元分别进行优化和调谐,不仅能够实现白光色温可调,而且可以使器件获得更高的发光效率。
这里的优化和调谐是指对发光单元中各层结构的材料、特性进行选择和设置,以使得两个发光单元发出的光进行混色叠加,并通过独立驱动的方式调谐两个发光单元的输出亮度和色坐标分布特性,使 得出射光色温可调。
本发明对于透明基板10、第一发光单元1和第二发光单元2的具体层叠方向不做限制。例如在图1中,透明基板10、第一发光单元1和第二发光单元2彼此平行设置,且透明基板10、第一发光单元1和第二发光单元2均竖直设置。
作为本发明的一种实施方式,第一发光单元1为底发光单元,第二发光单元2为顶发光单元,因此光线按照图1中空心箭头所示的方向传播。可以理解的是,本发明中也可以将第一发光单元1设置为顶发光单元,将第二发光单元2设置为底发光单元,从而改变所述电致发光器件的出光方向。以白光电致发光器件为例,只要能够使得第一发光单元1发出的光和第二发光单元2发出的光叠加产生白光即可。
进一步地,第一发光单元1包括从该第一发光单元1靠近透明基板10的一侧到远离透明基板10的一侧依次设置的第一透明阳极11、第一发光层13和全反射阴极12,以实现底发光结构。
第二发光单元2包括从该第二发光单元2靠近透明基板10的一侧到远离透明基板10的一侧依次设置的第二透明阳极21、第二发光层23和透明阴极22,以实现顶发光结构。
需要说明的是,第二发光单元2实际上为双面透光结构,这样设计的目的是为了使得第一发光单元1发出的光可以经过第二发光单元2透出,并与第二发光单元2发出的光进行叠加,两个发光单元发出的光同时从第二发光单元2的透明阴极22处出射,实现白光的效果。
参考图1,第一控制电路18分别与第一透明阳极11和全反射阴极12电连接,以控制第一发光单元1进行发光;第二控制电路28分别与第二透明阳极21和透明阴极22电连接,以控制第二发光单元2进行发光。
在本发明中,第一控制电路18和第二控制电路28可以分别控制第一发光单元1和第二发光单元2交替发光,以降低功耗,或者,第一控制电路18和第二控制电路28可以驱动第一发光单元1和第二发光单元2同时发光,以提高亮度。
在第一发光单元1和第二发光单元2同时发光的情况下,为避免透明基板10与两侧的透明阳极之间形成电容效应,优选地,将第一透明阳极11和第二透明阳极21之间电连接,以使得第一透明阳极11和第二透明阳极21之间保持等电位。
进一步地,为了降低光在透明基板10内部的光波导损失,本发明可以采用折射率与两个发光单元中的发光材料相适配的聚合物来制作透明基板10。经过多次试验,透明基板10的折射率优选为1.7-2,以有效降低器件内的光波导损失,提高器件的发光效率。
优选地,制作透明基板10的材料包括聚酰亚胺或者聚酰亚胺/二氧化钛复合材料,并且,透明基板10的厚度优选为100-1000μm。
在本发明中,可以选用柔性材料制作透明基板10,以使得本发明所提供的电致发光器件具有柔性显示的特性。例如,聚酰亚胺即为柔性材料,采用聚酰亚胺来制作透明基板10,即可实现柔性电致发光器件。
本发明对于第一发光层13和第二发光层23的材料不做具体限定,第一发光层13和/或第二发光层23的材料可以选自无机发光材料,也可以选自有机发光材料。
具体地,为了使所述电致发光器件具有较宽的色温调节范围,第一发光层13为长波有机发光材料层,第一发光层13能够发出波长为561-760nm的光(即覆盖红黄光范围);第二发光层23为短波有机发光材料层,第二发光层23能够发出波长为380-560nm的光(即覆盖蓝绿光范围)。因此,当第一发光层13发出的光和第二发光层23发出的光进行叠加时,能够使所述电致发光器件具有较宽的色温调节范围。
以实现白光电致发光器件为例,通常,蓝光与黄光叠加后能够产生白光。因此,第一发光层13可以是黄光有机发光材料层,制作第一发光层13的材料包括黄色荧光材料或者黄色磷光材料,例如:CPB:(bt)Ir(acac),通过蒸镀等方式进行制备。并且,第一发光层13的厚度为20-50nm。
相应地,第二发光层23可以是蓝光有机发光材料层,制作第二 发光层23的材料包括蓝色荧光材料或者蓝色磷光材料,例如:CPB:FIrpic,通过蒸镀等方式进行制备。并且第二发光层23的厚度为20-50nm。
如果所述电致发光器件不需要严格产生白光,那么第一发光层13和第二发光层13也可以采用其它色系的发光材料。例如,第二发光层23可以是绿光有机发光材料层,制作第二发光层23的材料可以是CPB:Ir(ppy)3,此处不再赘述。
优选地,制作第一透明阳极11和/或第二透明阳极21的材料包括氧化铟锡(ITO),通过磁控溅射等方式进行制备。并且,第一透明阳极11和/或第二透明阳极21的厚度为80-160nm,优选为100nm。
优选地,全反射阴极12为金属阴极,制作全反射阴极12的材料包括镁、银和铝中的任意一者或者任意几者的合金,例如:Mg:Ag或者Al,通过蒸镀等方式进行制备。并且,全反射阴极12的厚度为80-200nm。
优选地,制作透明阴极22的材料包括氟化锂(LiF)、铝(Al)、氧化铟锡(ITO)和锂(Li)中的任意一者,或者制作透明阴极22的材料包括锂/氧化铟锡(Li/ITO)复合材料,其中:
当制作透明阴极22的材料为氟化锂时,透明阴极22的厚度为0.5-1nm,优选为0.5nm;
当制作透明阴极22的材料为铝时,透明阴极22的厚度为1-3nm;
当制作透明阴极22的材料为锂时,透明阴极22的厚度为0.5-1.5nm,优选为1nm;
当制作透明阴极22的材料为氧化铟锡或者锂/氧化铟锡复合材料时,透明阴极22的厚度为20-50nm。
需要说明的是,为了提高所述电致发光器件的发光效率和亮度,透明阴极22的透光率优选应达到80%-90%。
进一步地,如图1所示,第一发光单元1还包括设置在第一透明阳极11和第一发光层13之间的第一空穴注入层14和第一空穴传输层15、以及设置在全反射阴极12和第一发光层13之间的第一电子注入层16和第一电子传输层17.
第二发光单元2还包括设置在第二透明阳极21和第二发光层23之间的第二空穴注入层24和第二空穴传输层25、以及设置在透明阴极22和第二发光层23之间的第二电子注入层26和第二电子传输层27。
其中,第一空穴注入层14用于对第一透明阳极11进行修饰,以提高空穴注入效率,改善第一透明阳极11表面的缺陷。相应地,第二空穴注入层24用于对第二透明阳极21进行修饰,以提高空穴注入效率,改善第二透明阳极21表面的缺陷。
优选地,制作第一空穴注入层14和/或第二空穴注入层24的材料包括酞菁酮(CuPc)、酞菁锌(ZnPc)、2,3,6,7,10,11-六氰基-1,4,5,8,9,12-六氮杂苯并菲(HAT-CN)和2,3,5,6-四氟-7,7',8,8'-四氰二甲基对苯醌(a-NPD:F4-TCNQ)中的任意一者。并且,第一空穴注入层14的厚度控制在5-40nm,第二空穴注入层24的厚度控制在5-40nm。
第一空穴传输层15为能级匹配层,能够促进空穴传输进入第一发光层13。相应地,第二空穴传输层25为能级匹配层,能够促进空穴传输进入第二发光层23。
优选地,制作第一空穴传输层15和/或第二空穴传输层25的材料包括N,N′-二(1-萘基)-N,N′-二苯基-1,1′-联苯-4-4′-二胺(NPB)或者2,2',7,7'-四(二苯基氨基)-9,9'-螺双芴(Spiro-TAD)。并且,第一空穴传输层15和/或第二空穴传输层25的厚度控制在10-100nm。
在本发明中,第一电子注入层16和第一电子传输层17共同构成第一电子辅助层,第二电子注入层26和第二电子传输层27共同构成第二电子辅助层。所述第一电子辅助层和所述第二电子辅助层的作用为降低电子在传输过程中的界面势垒。
优选地,制作所述第一电子辅助层和/或所述第二电子辅助层的材料包括Alq3:Li或者BPhen:Cs,所述第一电子辅助层和/或所述第二电子辅助层的导电率优选为10-5S/cm。并且,所述第一电子辅助层和/或所述第二电子辅助层的厚度为10-100nm。
本发明还提供了一种电致发光器件的制作方法,包括以下步骤:
提供透明基板;
在所述透明基板的两侧分别制作第一发光单元和第二发光单元,其中,所述第一发光单元和所述第二发光单元的发光方向相同且分别连接一控制电路。
本发明制作的器件具有并联式结构,实现了单个电致发光器件中两个发光单元的独立控制,有利于对每个发光单元分别进行优化和调谐,不仅能够实现色温可调,而且可以使器件获得更高的发光效率。此外,本发明可以采用折射率与发光材料适配的聚合物制作透明基板,从而降低器件内的光波导损失,并且能够实现柔性器件显示。
优选地,制作所述透明基板的材料包括聚酰亚胺或者聚酰亚胺/二氧化钛复合材料,所述透明基板的厚度为100-1000μm。
优选地,制作所述第一发光单元的步骤包括:
在所述透明基板的一侧依次形成第一透明阳极、第一发光层和全反射阴极。
优选地,制作所述第一透明阳极的材料包括氧化铟锡,所述第一透明阳极的厚度为80-160nm。
优选地,所述第一发光层为黄光有机发光材料层,制作所述第一发光层的材料包括黄色荧光材料或者黄色磷光材料,所述第一发光层的厚度为20-50nm。
优选地,所述全反射阴极为金属阴极,制作所述全反射阴极的材料包括镁、银和铝中的任意一者或者任意几者的合金,所述全反射阴极的厚度为80-200nm。
优选地,所述制作方法还包括在形成所述第一透明阳极和所述第一发光层之间进行的:
形成第一空穴注入层和第一空穴传输层;
以及,在形成所述第一发光层和所述全反射阴极之间进行的:
形成第一电子传输层和第一电子注入层。
优选地,制作所述第一空穴注入层的材料包括酞菁酮、酞菁锌、2,3,6,7,10,11-六氰基-1,4,5,8,9,12-六氮杂苯并菲和2,3,5,6-四氟-7,7',8,8'-四氰二甲基对苯醌中的任意一者,所述第一空穴注入层的厚 度为5-40nm。
优选地,制作所述第一空穴传输层的材料包括N,N′-二(1-萘基)-N,N′-二苯基-1,1′-联苯-4-4′-二胺或者2,2',7,7'-四(二苯基氨基)-9,9'-螺双芴,所述第一空穴传输层的厚度为10-100nm。
优选地,所述第一电子注入层和所述第一电子传输层共同构成第一电子辅助层,制作所述第一电子辅助层的材料包括Alq3:Li或者BPhen:Cs,所述第一电子辅助层的厚度为10-100nm。
优选地,制作所述第二发光单元的步骤包括:
在所述透明基板的另一侧依次形成第二透明阳极、第二发光层和透明阴极。
优选地,制作所述第二透明阳极的材料包括氧化铟锡,所述第二透明阳极的厚度为80-160nm。
优选地,所述第二发光层为蓝光有机发光材料层,制作所述第二发光层的材料包括蓝色荧光材料或者蓝色磷光材料,所述第二发光层的厚度为20-50nm。
优选地,制作所述透明阴极的材料包括氟化锂、铝、氧化铟锡和锂中的任意一者,或者制作所述透明阴极的材料包括锂/氧化铟锡复合材料,
当制作所述透明阴极的材料为氟化锂时,所述透明阴极的厚度为0.5-1nm;
当制作所述透明阴极的材料为铝时,所述透明阴极的厚度为1-3nm;
当制作所述透明阴极的材料为锂时,所述透明阴极的厚度为0.5-1.5nm;
当制作所述透明阴极的材料为氧化铟锡或者锂/氧化铟锡复合材料时,所述透明阴极的厚度为20-50nm。
优选地,所述制作方法还包括在形成所述第二透明阳极和所述第二发光层之间进行的:
形成第二空穴注入层和第二空穴传输层;
以及,在形成所述第二发光层和所述透明阴极之间进行的:
形成第二电子传输层和第二电子注入层。
优选地,制作所述第二空穴注入层的材料包括酞菁酮、酞菁锌、2,3,6,7,10,11-六氰基-1,4,5,8,9,12-六氮杂苯并菲和2,3,5,6-四氟-7,7',8,8'-四氰二甲基对苯醌中的任意一者,所述第二空穴注入层的厚度为5-40nm。
优选地,制作所述第二空穴传输层的材料包括N,N′-二(1-萘基)-N,N′-二苯基-1,1′-联苯-4-4′-二胺或者2,2',7,7'-四(二苯基氨基)-9,9'-螺双芴,所述第二空穴传输层的厚度为10-100nm。
优选地,所述第二电子注入层和所述第二电子传输层共同构成第二电子辅助层;
制作所述第二电子辅助层的材料包括Alq3:Li或者BPhen:Cs,所述第二电子辅助层的厚度为10-100nm。
本发明还提供了一种显示装置,所述显示装置包括多个像素单元,每个像素单元内均设置有电致发光器件,所述电致发光器件为本发明所提供的上述电致发光器件。
每个所述像素单元内还设置有相互独立的两个控制电路,一个所述像素单元内的两个所述控制电路分别用于控制该像素单元内的第一发光单元1和第二发光单元2发光。如图1所示,两个所述控制电路分别为第一控制电路18和第二控制电路28,第一发光单元1由第一控制电路18进行控制,第二发光单元2由第二控制电路28进行控制。
下面以白光有机电致发光器件为例,对本发明所提供的电致发光器件的制作过程进行说明。
首先,通过磁控溅射等方式在聚合物材质的透明基板10(厚度100~1000μm)两侧分别制备厚度约100nm的ITO薄膜作为第一透明阳极11和第二透明阳极21。为降低器件的光波导损失,考虑到ITO及发光材料的折射率,本发明中采用的透明基板10的折射率应在1.7~2之间,且具有较好的热稳定性,其材质可以选自PI或PI/TiO2复合材料等。
之后制备底发光单元,包括:
在第一透明阳极11外侧制备第一空穴注入层14,该层的作用为提高空穴注入效率,改善ITO层缺陷,可选用材料如CuPc、ZnPc、HAT-CN、a-NPD:F4-TCNQ等,采用蒸镀或涂布方式成膜,厚度控制在5~40nm;
在第一空穴注入层14外侧制备第一空穴传输层15,作用为促进空穴传输进入发光层,第一空穴传输层15可选用材料如NPB、Spiro-TAD等,厚度在10~100nm;
在第一空穴传输层15外侧制备第一发光层13,选用黄光有机发光体系材料,如CPB:(bt)Ir(acac)等进行制备,厚度控制在20~50nm;
在第一发光层13外侧制备第一电子辅助层(相当于第一电子注入层16和第一电子传输层17的结合),作用为降低电子传输过程中的界面势垒,第一电子辅助层的材料可选用Alq3:Li、BPhen:Cs等,电导率优选在10-5S/cm左右,厚度控制在10~100nm;
在第一电子辅助层外侧制备全反射阴极12,采用Mg:Ag或Al材料蒸镀而成,厚度控制在80~200nm。
之后制备顶发光单元,包括:
在第二透明阳极21的外侧制备第二空穴注入层24,该层的作用为提高空穴注入效率,改善ITO层缺陷,可选用涂布或蒸镀的方式实现。考虑到后续的工艺过程,可选材料如CuPc、ZnPc、HAT-CN、a-NPD:F4-TCNQ等,采用蒸镀或涂布方式成膜,厚度控制在5~40nm;
在第二空穴注入层24外侧制备第二空穴传输层25,作用为促进空穴传输进入发光层,第二空穴传输层25可选用材料如NPB、Spiro-TAD等,厚度在10~100nm;
在第二空穴传输层25外侧制备第二发光层23,选用蓝光有机发光体系材料,如CBP:FIrpic,厚度控制在20~50nm,通过蒸镀的方式制备;
在第二发光层23外侧制备第二电子辅助层(相当于第二电子注入层26和第二电子传输层27的结合),作用为降低电子传输过程中的界面势垒,第二电子辅助层的材料可选用Alq3:Li、BPhen:Cs等, 电导率优选在10-5S/cm左右,厚度控制在10~100nm;
在第二电子辅助层外侧制备透明阴极22,可采用LiF(优选厚度为0.5nm)、Al(优选厚度为1~3nm)、ITO(优选厚度为20~50nm)或Li/ITO复合材料(优选厚度为20~50nm),透过率优选应达到80%~90%。
通过上述方式构建的电致发光器件,配合外部设置的独立控制的第一控制电路18和第二控制电路28即可实现高发光效率、色温可调的白光输出。
本发明还提供了一种电致发光器件的驱动方法,所述电致发光器件为本发明所提供的上述电致发光器件,所述驱动方法包括:
通过第一控制电路驱动所述第一发光单元发光;
通过第二控制电路驱动所述第二发光单元发光;
其中,所述第一控制电路和所述控制电路为相互独立的电路。
优选地,所述第一发光单元包括从靠近所述透明基板的一侧到远离所述透明基板的一侧依次设置的第一透明阳极、第一发光层和全反射阴极;所述第二发光单元包括从靠近所述透明基板的一侧到远离所述透明基板的一侧依次设置的第二透明阳极、第二发光层和透明阴极;
为避免所述透明基板与两侧的透明阳极之间形成电容效应,所述驱动方法还包括:
所述第一控制电路向所述第一透明阳极输出的电压与所述第二控制电路向所述第二透明阳极输出的电压相等,以使得所述第一透明阳极和所述第二透明阳极等电位。
可以理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。对于本领域内的普通技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本发明的保护范围。

Claims (30)

  1. 一种电致发光器件,其特征在于,包括:
    透明基板;
    分别设置在所述透明基板两侧的第一发光单元和第二发光单元,所述第一发光单元和所述第二发光单元的发光方向相同且分别连接一控制电路。
  2. 根据权利要求1所述的电致发光器件,其特征在于,所述第一发光单元为底发光单元,所述第二发光单元为顶发光单元。
  3. 根据权利要求2所述的电致发光器件,其特征在于,所述第一发光单元包括从靠近所述透明基板的一侧到远离所述透明基板的一侧依次设置的第一透明阳极、第一发光层和全反射阴极;所述第二发光单元包括从靠近所述透明基板的一侧到远离所述透明基板的一侧依次设置的第二透明阳极、第二发光层和透明阴极。
  4. 根据权利要求3所述的电致发光器件,其特征在于,所述第一透明阳极和所述第二透明阳极之间电连接。
  5. 根据权利要求1至4中任意一项所述的电致发光器件,其特征在于,所述透明基板的折射率为1.7-2。
  6. 根据权利要求3或4所述的电致发光器件,其特征在于,所述第一发光层为长波有机发光材料层,所述第一发光层能够发出波长为561-760nm的光;所述第二发光层为短波有机发光材料层,所述第二发光层能够发出波长为380-560nm的光。
  7. 根据权利要求6所述的电致发光器件,其特征在于,所述第一发光层为黄光有机发光材料层,所述第二发光层为蓝光有机发光材 料层。
  8. 根据权利要求3或4所述的电致发光器件,其特征在于,所述第一发光单元还包括设置在所述第一透明阳极和所述第一发光层之间的第一空穴注入层和第一空穴传输层、以及设置在所述全反射阴极和所述第一发光层之间的第一电子注入层和第一电子传输层;
    所述第二发光单元还包括设置在所述第二透明阳极和所述第二发光层之间的第二空穴注入层和第二空穴传输层、以及设置在所述透明阴极和所述第二发光层之间的第二电子注入层和第二电子传输层。
  9. 根据权利要求8所述的电致发光器件,其特征在于,所述第一电子注入层和所述第一电子传输层共同构成第一电子辅助层,所述第二电子注入层和所述第二电子传输层共同构成第二电子辅助层。
  10. 一种电致发光器件的制作方法,其特征在于,包括以下步骤:
    提供透明基板;
    在所述透明基板的两侧分别制作第一发光单元和第二发光单元,其中,所述第一发光单元和所述第二发光单元的发光方向相同且分别连接一控制电路。
  11. 根据权利要求10所述的制作方法,其特征在于,制作所述透明基板的材料包括聚酰亚胺或者聚酰亚胺/二氧化钛复合材料,所述透明基板的厚度为100-1000μm。
  12. 根据权利要求10所述的制作方法,其特征在于,制作所述第一发光单元的步骤包括:
    在所述透明基板的一侧依次形成第一透明阳极、第一发光层和全反射阴极。
  13. 根据权利要求12所述的制作方法,其特征在于,制作所述第一透明阳极的材料包括氧化铟锡,所述第一透明阳极的厚度为80-160nm。
  14. 根据权利要求12所述的制作方法,其特征在于,所述第一发光层为黄光有机发光材料层,制作所述第一发光层的材料包括黄色荧光材料或者黄色磷光材料,所述第一发光层的厚度为20-50nm。
  15. 根据权利要求12所述的制作方法,其特征在于,所述全反射阴极为金属阴极,制作所述全反射阴极的材料包括镁、银和铝中的任意一者或者任意几者的合金,所述全反射阴极的厚度为80-200nm。
  16. 根据权利要求12所述的制作方法,其特征在于,所述制作方法还包括在形成所述第一透明阳极和所述第一发光层之间进行的:
    形成第一空穴注入层和第一空穴传输层;
    以及,在形成所述第一发光层和所述全反射阴极之间进行的:
    形成第一电子传输层和第一电子注入层。
  17. 根据权利要求16所述的制作方法,其特征在于,制作所述第一空穴注入层的材料包括酞菁酮、酞菁锌、2,3,6,7,10,11-六氰基-1,4,5,8,9,12-六氮杂苯并菲和2,3,5,6-四氟-7,7',8,8'-四氰二甲基对苯醌中的任意一者,所述第一空穴注入层的厚度为5-40nm。
  18. 根据权利要求16所述的制作方法,其特征在于,制作所述第一空穴传输层的材料包括N,N′-二(1-萘基)-N,N′-二苯基-1,1′-联苯-4-4′-二胺或者2,2',7,7'-四(二苯基氨基)-9,9'-螺双芴,所述第一空穴传输层的厚度为10-100nm。
  19. 根据权利要求16所述的制作方法,其特征在于,所述第一电子注入层和所述第一电子传输层共同构成第一电子辅助层,制作所 述第一电子辅助层的材料包括Alq3:Li或者BPhen:Cs,所述第一电子辅助层的厚度为10-100nm。
  20. 根据权利要求12所述的制作方法,其特征在于,制作所述第二发光单元的步骤包括:
    在所述透明基板的另一侧依次形成第二透明阳极、第二发光层和透明阴极。
  21. 根据权利要求20所述的制作方法,其特征在于,制作所述第二透明阳极的材料包括氧化铟锡,所述第二透明阳极的厚度为80-160nm。
  22. 根据权利要求20所述的制作方法,其特征在于,所述第二发光层为蓝光有机发光材料层,制作所述第二发光层的材料包括蓝色荧光材料或者蓝色磷光材料,所述第二发光层的厚度为20-50nm。
  23. 根据权利要求20所述的制作方法,其特征在于,制作所述透明阴极的材料包括氟化锂、铝、氧化铟锡和锂中的任意一者,或者制作所述透明阴极的材料包括锂/氧化铟锡复合材料,
    当制作所述透明阴极的材料为氟化锂时,所述透明阴极的厚度为0.5-1nm;
    当制作所述透明阴极的材料为铝时,所述透明阴极的厚度为1-3nm;
    当制作所述透明阴极的材料为锂时,所述透明阴极的厚度为0.5-1.5nm;
    当制作所述透明阴极的材料为氧化铟锡或者锂/氧化铟锡复合材料时,所述透明阴极的厚度为20-50nm。
  24. 根据权利要求20所述的制作方法,其特征在于,所述制作方法还包括在形成所述第二透明阳极和所述第二发光层之间进行的:
    形成第二空穴注入层和第二空穴传输层;
    以及,在形成所述第二发光层和所述透明阴极之间进行的:
    形成第二电子传输层和第二电子注入层。
  25. 根据权利要求24所述的制作方法,其特征在于,制作所述第二空穴注入层的材料包括酞菁酮、酞菁锌、2,3,6,7,10,11-六氰基-1,4,5,8,9,12-六氮杂苯并菲和2,3,5,6-四氟-7,7',8,8'-四氰二甲基对苯醌中的任意一者,所述第二空穴注入层的厚度为5-40nm。
  26. 根据权利要求24所述的制作方法,其特征在于,制作所述第二空穴传输层的材料包括N,N′-二(1-萘基)-N,N′-二苯基-1,1′-联苯-4-4′-二胺或者2,2',7,7'-四(二苯基氨基)-9,9'-螺双芴,所述第二空穴传输层的厚度为10-100nm。
  27. 根据权利要求24所述的制作方法,其特征在于,所述第二电子注入层和所述第二电子传输层共同构成第二电子辅助层;
    制作所述第二电子辅助层的材料包括Alq3:Li或者BPhen:Cs,所述第二电子辅助层的厚度为10-100nm。
  28. 一种显示装置,所述显示装置包括多个像素单元,每个像素单元内均设置有电致发光器件,其特征在于,所述电致发光器件为权利要求1至9中任意一项所述的电致发光器件,每个所述像素单元内还设置有相互独立的两个控制电路,一个所述像素单元内的两个所述控制电路分别用于控制该像素单元内的所述第一发光单元和所述第二发光单元发光。
  29. 一种电致发光器件的驱动方法,所述电致发光器件为权利要求1至9中任意一项所述的电致发光器件,其特征在于,所述驱动方法包括:
    通过第一控制电路驱动所述第一发光单元发光;
    通过第二控制电路驱动所述第二发光单元发光;
    其中,所述第一控制电路和所述控制电路为相互独立的电路。
  30. 根据权利要求29所述的驱动方法,其特征在于,所述第一发光单元包括从靠近所述透明基板的一侧到远离所述透明基板的一侧依次设置的第一透明阳极、第一发光层和全反射阴极;所述第二发光单元包括从靠近所述透明基板的一侧到远离所述透明基板的一侧依次设置的第二透明阳极、第二发光层和透明阴极;
    其中,
    所述第一控制电路向所述第一透明阳极输出的电压与所述第二控制电路向所述第二透明阳极输出的电压相等,以使得所述第一透明阳极和所述第二透明阳极等电位。
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