WO2016194508A1 - Ａｌ合金スパッタリングターゲット - Google Patents

Ａｌ合金スパッタリングターゲット Download PDF

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WO2016194508A1
WO2016194508A1 PCT/JP2016/062571 JP2016062571W WO2016194508A1 WO 2016194508 A1 WO2016194508 A1 WO 2016194508A1 JP 2016062571 W JP2016062571 W JP 2016062571W WO 2016194508 A1 WO2016194508 A1 WO 2016194508A1
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Prior art keywords
sputtering target
ray diffraction
plane
diffraction peak
peak intensity
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PCT/JP2016/062571
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English (en)
French (fr)
Japanese (ja)
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高木　勝寿
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株式会社コベルコ科研
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Priority to CN201680029641.7A priority Critical patent/CN107614745B/zh
Priority to KR1020207007179A priority patent/KR20200029634A/ko
Priority to KR1020177034931A priority patent/KR20180004214A/ko
Publication of WO2016194508A1 publication Critical patent/WO2016194508A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means

Definitions

  • the present invention relates to an Al alloy sputtering target.
  • the present invention relates to an Al alloy sputtering target capable of forming an Al alloy thin film at a high deposition rate.
  • the films forming speed can be increased by increasing the sputtering power, that is, the power.
  • the sputtering power is increased, film formation abnormalities such as arcing and splash are likely to occur, and problems such as a decrease in yield of a touch panel or the like occur. Therefore, a sputtering target that can increase the deposition rate without increasing the sputtering power is desired.
  • an Al—Nd alloy thin film having both low electric resistivity and high heat resistance is used for the wiring film of the liquid crystal display.
  • a sputtering method is adopted as a film formation method of this Al-Nd alloy thin film, and an Al-Nd alloy sputtering target is used as a raw material for thin film formation.
  • the technologies of the following Patent Documents 1 to 5 have been proposed as the Al-Nd alloy sputtering target so far.
  • Patent Document 1 shows that an Al alloy film excellent in alkali corrosion resistance for display devices can be provided by reducing the Fe content of an Al-based alloy sputtering target.
  • Patent Document 2 shows that by reducing the variation in Vickers hardness of the surface of an Al alloy sputtering target, it is possible to produce an Al alloy film such as liquid crystal excellent in film uniformity.
  • Patent Document 3 shows that an Al alloy electrode of a thermal printer excellent in heat resistance, void resistance, hillock resistance and the like can be formed by using an Al-based alloy sputtering target of a predetermined alloy composition. Further, in Patent Document 4, by using an Al-Nd alloy sputtering target of a predetermined alloy composition, generation of hillocks after annealing treatment of an Al-Nd alloy thin film of a conductive portion for a liquid crystal display can be suppressed and resistance value is improved. It has been shown that it can be reduced.
  • Patent Document 5 shows that by using an Al-Nd alloy sputtering target having a reduced oxygen content, it is possible to suppress the generation of hillocks of an alloy thin film constituting an electrode for a liquid crystal display and to reduce the specific resistance value. There is.
  • Japan JP 2012-132091 Japanese Patent Application Laid-Open No. 2004-204284 Japanese Patent Application Laid-Open No. 2003-103821 Japanese Patent Application Laid-Open No. 2001-125123 JP JP 2001-93862
  • Patent Documents 1 to 5 disclose that the component composition of the sputtering target is controlled in order to improve the characteristics and the like of the film to be formed, but the film forming rate is increased to produce a display device.
  • the subject of improving the sex is not mentioned, and the means for solving the subject is not disclosed.
  • the present invention has been made in view of the above situation, and its object is to obtain a high deposition rate as compared with a conventional Al-Nd alloy sputtering target, and to remarkably improve the productivity of a touch panel etc. It is an object of the present invention to provide an Al-Nd alloy sputtering target that can be
  • the Al alloy sputtering target of the present invention which has solved the above problems, comprises an Al alloy containing 0.1 atomic% to 3 atomic% of Nd, and X-ray diffraction of Al (200) plane in an X-ray diffraction pattern.
  • the peak intensity, the X-ray diffraction peak intensity of the Al (311) plane, the X-ray diffraction peak intensity of the Al (220) plane, and the X-ray diffraction peak intensity of the Al (111) plane satisfy the relationship of the following formula (1) And it has a gist in the place where Vickers hardness Hv fills 29 or more and 36 or less.
  • I Al (200) is the X-ray diffraction peak intensity of the Al (200) plane
  • I Al (311) is the X-ray diffraction peak intensity of the Al (311) plane
  • I Al (220) is Al (220 )
  • I Al (111) represents the X-ray diffraction peak intensity of the Al (111) plane.
  • the Al alloy sputtering target has an average crystal grain size of 10 ⁇ m to 100 ⁇ m.
  • the Al alloy sputtering target is used for forming a lead-out wiring film of a touch panel and a wiring film of a touch panel sensor.
  • the film forming rate when the sputtering target is used for forming an Al-Nd alloy thin film can be raised enough.
  • the productivity of a touch panel using the thin film for example, as a lead wiring film and a wiring film of a touch panel sensor can be remarkably improved.
  • FIG. 1 shows an example of X-ray diffraction peak intensities of (111), (200), (220) and (311) planes of Al of the Al alloy sputtering target of the present invention.
  • the present inventors have intensively studied to provide an Al-Nd alloy sputtering target capable of forming an Al-Nd alloy thin film at high speed.
  • X-ray diffraction peak intensities of the Al (200) plane, Al (311) plane, Al (220) plane, and Al (111) plane of the sputtering surface of the Al-Nd alloy sputtering target of the component composition described later It has been found that the Al—Nd alloy sputtering target can be realized by controlling so as to satisfy the relationship of the following formula (1) and controlling the Vickers hardness to 29 or more and 36 or less.
  • I Al (200) is the X-ray diffraction peak intensity of the Al (200) plane
  • I Al (311) is the X-ray diffraction peak intensity of the Al (311) plane
  • I Al (220) is Al (220 )
  • I Al (111) represents the X-ray diffraction peak intensity of the Al (111) plane.
  • the film forming rate can be further increased by controlling the average crystal grain size of the Al—Nd alloy sputtering target to preferably 10 ⁇ m or more and 100 ⁇ m or less, and completed the present invention.
  • the characteristic capable of forming an Al—Nd alloy thin film at high speed is sometimes referred to as “having a high deposition rate”.
  • the present invention is characterized in that the magnitude relationship of X-ray diffraction peak intensities satisfies I Al (200) > I Al (311) > I Al (220) > I Al (111) .
  • the process of finding out that a high deposition rate can be realized by satisfying the magnitude relationship between the X-ray diffraction peak intensities is as follows.
  • A It has been known that the collision energy of Ar ions at the time of sputtering is efficiently transmitted in the direction in which the degree of atomic packing of the metal crystal face is high.
  • B In particular, in the order of (200), (311), (220), and (111) planes of the crystal plane of Al, the degree of atomic packing in the direction of the normal to the crystal plane is high. It has been known that the collision energy can be transmitted more efficiently.
  • the present inventor found that in the Al-Nd alloy sputtering target, the atomic filling degree in the direction normal to the crystal plane of Al is in the order of high (200) plane (311 It has been found that by satisfying the magnitude relationship of the above-mentioned X-ray diffraction peak intensities of the (220) plane and the (111) plane, many sputtered particles can be ejected, and a high deposition rate can be realized.
  • the magnitude relationship is the (200) plane, the (311) plane, and the (220) plane among a plurality of peaks including the (222) plane and the like.
  • And (111) planes are selected and determined by comparing X-ray diffraction peak intensities.
  • the Vickers hardness Hv of the Al—Nd alloy sputtering target will be described.
  • the Vickers hardness of the Al-Nd alloy sputtering target exceeds 36, collision energy of Ar ion at the time of sputtering is not efficiently propagated, and sputtered particles are hard to be ejected from the sputtering target, so a high deposition rate can not be obtained.
  • the upper limit of the Vickers hardness is set to 36 or less.
  • the upper limit of Vickers hardness is preferably 35 or less, more preferably 34 or less, and still more preferably 33 or less.
  • the lower limit of Vickers hardness is set to 29 or more.
  • the lower limit of the Vickers hardness is preferably 30 or more, more preferably 31 or more.
  • the average crystal grain size of the Al—Nd alloy sputtering target is preferably 10 ⁇ m or more and 100 ⁇ m or less from the viewpoint of securing an excellent high deposition rate. If it is less than 10 ⁇ m, collision energy of Ar ions at the time of sputtering is not efficiently propagated, and sputtered particles are hardly ejected from the sputtering target. As a result, since a high deposition rate may not be obtained in some cases, the thickness is preferably 10 ⁇ m or more as described above.
  • the lower limit of the average crystal grain size is more preferably 20 ⁇ m or more, still more preferably 30 ⁇ m or more, and still more preferably 40 ⁇ m or more.
  • the thickness is preferably 100 ⁇ m or less as described above.
  • the upper limit of the average crystal grain size is more preferably 90 ⁇ m or less, still more preferably 80 ⁇ m or less.
  • the said average grain size is calculated
  • the crystal grain size can be determined more accurately as the magnification of the microscope is larger, and usually, it is set to about 100 to 500 times. Next, draw four or more straight lines in the shape of a well in the obtained photograph. The crystal grain size can be determined more accurately as the number of straight lines increases.
  • the number n of crystal grain boundaries on the straight line is examined, and the crystal grain diameter d is calculated based on the following equation for each straight line. Thereafter, the average value of the crystal grain diameter d determined from each of a plurality of straight lines is taken as the average crystal grain diameter of the sputtering target.
  • d (unit: ⁇ m) L / n / m
  • L represents a linear length L
  • n represents the number n of grain boundaries on the straight line
  • m represents a magnification of an optical micrograph.
  • the sputtering target of the present invention is made of an Al alloy containing 0.1% to 3% of Nd in atomic percent.
  • % means “atomic%” about a chemical component.
  • Nd 0.1% to 3%
  • Nd is an element that prevents hillocks and is useful for improving heat resistance. If the content in the Al alloy is less than 0.1%, it is not possible to form an Al alloy thin film having high heat resistance. Therefore, the lower limit of the Nd content is 0.1% or more. The lower limit of the Nd content is preferably 0.15% or more, more preferably 0.20% or more. On the other hand, when the Nd content exceeds 3%, an Al alloy thin film having a low electrical resistivity can not be formed. Therefore, the upper limit of the Nd content is 3% or less. The upper limit of the Nd content is preferably 2% or less, more preferably 1% or less.
  • the contained elements specified in the present invention are as described above, and the balance is Al and unavoidable impurities.
  • unavoidable impurities it is possible to allow mixing of elements brought in from raw materials, materials, manufacturing facilities and the like, for example, elements such as Fe, Si, Cu, C, O, N and the like.
  • the Al-Nd alloy sputtering target may be an Al alloy sputtering target substantially consisting only of Al and Nd as described above, but even if it contains the following elements within a range that does not adversely affect the present invention good.
  • Ti 0.0005% or more and 0.01% or less
  • Ti is an element effective for refining Al crystal grains.
  • the lower limit of the Ti content is preferably 0.0005% or more, more preferably 0.0010% or more.
  • the upper limit of the Ti content is preferably 0.01% or less, more preferably 0.005% or less.
  • B is an element effective for refining Al crystal grains.
  • the lower limit of the B content is preferably 0.0005% or more, more preferably 0.0010% or more.
  • the upper limit of the B content is preferably 0.01% or less, more preferably 0.005% or less.
  • the shape of the sputtering target is not particularly limited, and may be various shapes known in the art, such as a flat plate such as a circular plate and a square plate, and a cylindrical shape. For example, it can be in the shape of a disc.
  • a disk-shaped sputtering target for example, rounds off a cylindrical forged body whose metal structure and Nd distribution are equalized by forging and heat treatment; for example, the metal structure and Nd distribution are equalized by rolling and heat treatment
  • a flat plate-shaped rolled body is round-cut; or a flat-plate-shaped rolled body with uniformed metal structure and Nd distribution by forging, rolling and heat treatment;
  • the system thin film can be formed continuously and stably.
  • the Al—Nd alloy sputtering target of the present invention is preferably used for forming a lead-out wiring film of a touch panel and a wiring film of a touch panel sensor which are required to improve productivity, particularly a high deposition rate.
  • productivity of the touch panel can be remarkably improved.
  • the Al-Nd alloy sputtering target of the present invention melts and casts an Al material and an Nd material into the atmosphere, performs at least one plastic working of forging and rolling, heat treats, and machine, if necessary It can be manufactured by bonding to a backing plate.
  • the Al—Nd alloy sputtering target of the present invention can be manufactured under the following conditions.
  • the Al material and the Nd material are melted in the air, and an ingot with a thickness of 150 to 180 mm is formed by DC (Direct Chill Casting) casting, and then cold forging and hot rolling are performed for annealing. Then, machining such as rounding and lathing may be performed to manufacture an Al—Nd alloy sputtering target.
  • DC Direct Chill Casting
  • the upper limit and the lower limit of the heating temperature and reduction ratio of hot rolling and the upper limit and the lower limit of the heating temperature of annealing are particularly described below. It is important to control in the range of Hereafter, the process after cold forging is explained in full detail.
  • the lower limit of the working ratio of cold forging is preferably 30% or more, more preferably 35% or more.
  • the upper limit of the working ratio of cold forging is preferably 50% or less, more preferably 45% or less.
  • Machining ratio (%) 100 ⁇ (thickness before cold forging start-cold forging completed thickness) / thickness before cold forging start
  • Heating temperature of hot rolling 350 to 450 ° C
  • the X-ray diffraction peak intensity of the Al (200) surface decreases, and the X-ray diffraction pattern of the above formula (1) can not be obtained.
  • the X-ray diffraction peak of the Al (200) plane is smaller than the X-ray diffraction peak of the Al (311) plane. Therefore, the lower limit of the heating temperature of hot rolling is 350 ° C. or more.
  • the lower limit of the heating temperature of hot rolling is preferably 370 ° C. or higher.
  • the heating temperature for hot rolling exceeds 450 ° C.
  • the X-ray diffraction peak intensity of the Al (111) surface becomes large, and the X-ray diffraction pattern of the above formula (1) can not be obtained.
  • the X-ray diffraction peak of the Al (111) plane is larger than the X-ray diffraction peak of the Al (220) plane. Therefore, the upper limit of the heating temperature of hot rolling is set to 450 ° C. or less.
  • the upper limit of the heating temperature for hot rolling is preferably 430 ° C. or less.
  • Hot rolling reduction ratio 75 to 95%
  • the rolling reduction of the hot rolling is less than 75%, the X-ray diffraction peak intensity of the Al (200) surface becomes small, and the X-ray diffraction pattern of the above formula (1) can not be obtained.
  • the X-ray diffraction peak of the Al (200) plane is smaller than the X-ray diffraction peak of the Al (300) plane. Therefore, the lower limit of the rolling reduction of hot rolling is set to 75% or more.
  • the lower limit of the rolling reduction of hot rolling is preferably 77% or more.
  • the upper limit of the rolling reduction of hot rolling is 95% or less.
  • the upper limit of the rolling reduction in hot rolling is preferably 90% or less.
  • Rolling reduction (%) 100 ⁇ (thickness before rolling start-rolling complete thickness) / thickness before rolling start
  • Annealing heating temperature 350 to 450 ° C
  • the lower limit of the heating temperature for annealing is set to 350 ° C. or more.
  • the lower limit of the heating temperature for annealing is preferably 370 ° C. or more.
  • the upper limit of the heating temperature for annealing is preferably 450 ° C. or less, more preferably 430 ° C. or less.
  • Annealing heating time 1.0 hour or more and less than 3.0 hours If the annealing heating time is too short, the average crystal grain size of the Al—Nd alloy sputtering target becomes too small, and the Vickers hardness becomes too high. Therefore, the lower limit of the heating time of annealing is preferably 1.0 hour or more, more preferably 1.2 hours or more. On the other hand, when the heating time of annealing is too long, the average grain size of the Al—Nd alloy sputtering target becomes too large, and the Vickers hardness becomes too low. Therefore, the upper limit of the heating time of annealing is preferably less than 3.0 hours, more preferably 2.8 hours or less.
  • Al material Al having a purity of 99.99 atomic%
  • Nd material Nd 99.5 atomic% purity
  • rolled plate cutting, rounding and lathe processing were performed. Specifically, grinding is performed from the surface layer portion of one side to 0.5 mm in the thickness direction of the rolled plate subjected to cutting and rounding, and 1.0 mm in total on both sides, and one side after grinding is a sputtering surface It lathe processed so that it might become. Thus, a disc-shaped Al—Nd alloy sputtering target having a size of 101.6 mm in diameter ⁇ 5.0 mm in thickness was produced. The amount of Nd in the sputtering target thus obtained was analyzed by inductively coupled plasma (ICP) emission spectroscopy.
  • ICP inductively coupled plasma
  • X-ray Diffraction Conditions a) Pretreatment of Test Piece
  • the surface of the test piece was smooth, so no pretreatment was performed.
  • the Vickers hardness Hv of each sputtering target was measured with a load of 1 kgf using a Vickers hardness tester (AVK-G2, manufactured by Akashi Manufacturing Co., Ltd.).
  • L represents a linear length L
  • n represents the number n of grain boundaries on the straight line
  • m represents a magnification of an optical micrograph.
  • the average value of the crystal grain size d determined from each of the four straight lines was taken as the average crystal grain size ( ⁇ m).
  • the deposition rate of an Al—Nd alloy thin film by DC magnetron sputtering was evaluated using the above-described Al—Nd alloy sputtering target. Specifically, for a glass substrate of 50.0 mm diameter ⁇ 0.70 mm thickness, using a sputtering apparatus “Sputtering system HSR-542S” manufactured by Shimadzu Corporation, DC magnetron sputtering is carried out with a film forming time of 120 seconds. Then, an Al-Nd alloy film was obtained.
  • the sputtering conditions are as follows. Back pressure: 3.0 ⁇ 10 -6 Torr or less Ar gas pressure: 2.25 ⁇ 10 -3 Torr Ar gas flow rate: 30 sccm Sputtering power: DC 260 W Distance between poles: 51.6 mm Substrate temperature: room temperature
  • the deposition rate was calculated.
  • a and B were accepted as having a high deposition rate, particularly in the case of A, it was evaluated that the deposition rate was preferable faster, and C was evaluated as a rejection as a deposition rate was slow.
  • the results are shown in Table 1.
  • C Film forming speed less than 1.8 nm / s
  • Table 1 No. 5, 8 and 11 are examples of the present invention, and since the magnitude relationship of X-ray diffraction peak intensity and Vickers hardness are appropriately controlled, a high deposition rate can be achieved, and the determination is a pass. Since this Al-Nd alloy sputtering target has a high deposition rate, it is possible to improve the productivity of touch panels and the like.
  • the Vickers hardness is in a more preferable range, and the average crystal grain size is in a still more preferable range, so an extremely high film forming speed can be obtained and the productivity of the touch panel is remarkably improved. It is possible.
  • Table 1 No. No. 1 is a comparative example in which the average crystal grain size is small and the Vickers hardness is high because the annealing heating temperature is low, and a high deposition rate can not be obtained, and the determination is rejection.
  • No. No. 2 is a comparative example in which the magnitude relationship of the X-ray diffraction peak intensity is not appropriately controlled because the reduction ratio of hot rolling is low, a high deposition rate can not be obtained, and the determination is rejected.
  • No. No. 4 is a comparative example in which the average crystal grain size is large and the Vickers hardness is low because the heating temperature for annealing is high, and a high deposition rate can not be obtained, and the determination is a rejection.
  • No. No. 6 is a comparative example in which the magnitude relationship of the X-ray diffraction peak intensity is not appropriately controlled because the heating temperature of hot rolling is low, a high deposition rate can not be obtained, and the determination is a rejection.
  • No. No. 7 is a comparative example in which the magnitude relationship of the X-ray diffraction peak intensity is not appropriately controlled because the heating temperature of hot rolling is high, a high deposition rate can not be obtained, and the determination is rejected.
  • No. 9 is a comparative example in which the average crystal grain size is small and the Vickers hardness is high because the annealing heating time is short, and a high deposition rate can not be obtained, and the determination is a rejection.
  • No. 10 is a comparative example in which the average crystal grain size is large and the Vickers hardness is low because the annealing heating time is long, a high deposition rate can not be obtained, and the determination is a rejection.
  • the productivity of a display device such as a touch panel can be significantly improved.

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PCT/JP2016/062571 2015-06-05 2016-04-20 Ａｌ合金スパッタリングターゲット WO2016194508A1 (ja)

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Application Number Priority Date Filing Date Title
CN201680029641.7A CN107614745B (zh) 2015-06-05 2016-04-20 铝合金溅射靶材
KR1020207007179A KR20200029634A (ko) 2015-06-05 2016-04-20 Al 합금 스퍼터링 타겟
KR1020177034931A KR20180004214A (ko) 2015-06-05 2016-04-20 Al 합금 스퍼터링 타겟

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JP2015115184A JP6377021B2 (ja) 2015-06-05 2015-06-05 Ａｌ合金スパッタリングターゲット
JP2015-115184 2015-06-05

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