WO2016194508A1

WO2016194508A1 - Al ALLOY SPUTTERING TARGET

Info

Publication number: WO2016194508A1
Application number: PCT/JP2016/062571
Authority: WO
Inventors: 高木　勝寿
Original assignee: 株式会社コベルコ科研
Priority date: 2015-06-05
Filing date: 2016-04-20
Publication date: 2016-12-08
Also published as: TW201643263A; JP6377021B2; CN110205591B; JP2017002343A; TWI585214B; KR20180004214A; CN107614745B; KR20200029634A; CN110205591A; CN107614745A

Abstract

A sputtering target which is formed of an Al alloy containing 0.1-3 atom% of Nd, and has a Vickers hardness of 29-36 and an X-ray diffraction peak intensity satisfying the relationship of formula (1). I_Al(200) > I_Al(311) > I_Al(220) > I_Al(111) (1) In the formula, I_Al(200) represents the X-ray diffraction peak intensity of the Al (200) plane; I_Al(311) represents the X-ray diffraction peak intensity of the Al (311) plane; I_Al(220) represents the X-ray diffraction peak intensity of the Al (220) plane; and I_Al(111) represents the X-ray diffraction peak intensity of the Al (111) plane.

Description

Al alloy sputtering target

The present invention relates to an Al alloy sputtering target. In particular, the present invention relates to an Al alloy sputtering target capable of forming an Al alloy thin film at a high deposition rate.

As one of the methods for improving the productivity of a display device such as a touch panel, for example, a liquid crystal display, it is mentioned to rapidly form a thin film when forming a lead wiring film forming the touch panel and a wiring film of a touch panel sensor. Be In the case of forming a thin film by sputtering, the film forming speed can be increased by increasing the sputtering power, that is, the power. However, when the sputtering power is increased, film formation abnormalities such as arcing and splash are likely to occur, and problems such as a decrease in yield of a touch panel or the like occur. Therefore, a sputtering target that can increase the deposition rate without increasing the sputtering power is desired.

By the way, an Al—Nd alloy thin film having both low electric resistivity and high heat resistance is used for the wiring film of the liquid crystal display. A sputtering method is adopted as a film formation method of this Al-Nd alloy thin film, and an Al-Nd alloy sputtering target is used as a raw material for thin film formation. The technologies of the following Patent Documents 1 to 5 have been proposed as the Al-Nd alloy sputtering target so far.

Patent Document 1 shows that an Al alloy film excellent in alkali corrosion resistance for display devices can be provided by reducing the Fe content of an Al-based alloy sputtering target. Patent Document 2 shows that by reducing the variation in Vickers hardness of the surface of an Al alloy sputtering target, it is possible to produce an Al alloy film such as liquid crystal excellent in film uniformity.

Patent Document 3 shows that an Al alloy electrode of a thermal printer excellent in heat resistance, void resistance, hillock resistance and the like can be formed by using an Al-based alloy sputtering target of a predetermined alloy composition. Further, in Patent Document 4, by using an Al-Nd alloy sputtering target of a predetermined alloy composition, generation of hillocks after annealing treatment of an Al-Nd alloy thin film of a conductive portion for a liquid crystal display can be suppressed and resistance value is improved. It has been shown that it can be reduced.

Patent Document 5 shows that by using an Al-Nd alloy sputtering target having a reduced oxygen content, it is possible to suppress the generation of hillocks of an alloy thin film constituting an electrode for a liquid crystal display and to reduce the specific resistance value. There is.

Japan JP 2012-132091 Japanese Patent Application Laid-Open No. 2004-204284 Japanese Patent Application Laid-Open No. 2003-103821 Japanese Patent Application Laid-Open No. 2001-125123 JP JP 2001-93862

As described above, Patent Documents 1 to 5 disclose that the component composition of the sputtering target is controlled in order to improve the characteristics and the like of the film to be formed, but the film forming rate is increased to produce a display device. The subject of improving the sex is not mentioned, and the means for solving the subject is not disclosed.

The present invention has been made in view of the above situation, and its object is to obtain a high deposition rate as compared with a conventional Al-Nd alloy sputtering target, and to remarkably improve the productivity of a touch panel etc. It is an object of the present invention to provide an Al-Nd alloy sputtering target that can be

The Al alloy sputtering target of the present invention, which has solved the above problems, comprises an Al alloy containing 0.1 atomic% to 3 atomic% of Nd, and X-ray diffraction of Al (200) plane in an X-ray diffraction pattern. The peak intensity, the X-ray diffraction peak intensity of the Al (311) plane, the X-ray diffraction peak intensity of the Al (220) plane, and the X-ray diffraction peak intensity of the Al (111) plane satisfy the relationship of the following formula (1) And it has a gist in the place where Vickers hardness Hv fills 29 or more and 36 or less.
I _{Al (200)} > I _{Al (311)} > I _{Al (220)} > I _{Al (111)} (1)
In the formula, I _{Al (200)} is the X-ray diffraction peak intensity of the Al (200) plane, I _{Al (311)} is the X-ray diffraction peak intensity of the Al (311) plane, I _{Al (220)} is Al (220 ₎ I _{Al (111)} represents the X-ray diffraction peak intensity of the Al (111) plane.

In a preferred embodiment of the present invention, the Al alloy sputtering target has an average crystal grain size of 10 μm to 100 μm.

In a preferred embodiment of the present invention, the Al alloy sputtering target is used for forming a lead-out wiring film of a touch panel and a wiring film of a touch panel sensor.

According to the present invention, since the X-ray diffraction peak intensity and the Vickers hardness of the Al-Nd alloy sputtering target are controlled, the film forming rate when the sputtering target is used for forming an Al-Nd alloy thin film Can be raised enough. As a result, the productivity of a touch panel using the thin film, for example, as a lead wiring film and a wiring film of a touch panel sensor can be remarkably improved.

FIG. 1 shows an example of X-ray diffraction peak intensities of (111), (200), (220) and (311) planes of Al of the Al alloy sputtering target of the present invention.

Under the above-mentioned problems, the present inventors have intensively studied to provide an Al-Nd alloy sputtering target capable of forming an Al-Nd alloy thin film at high speed. As a result, X-ray diffraction peak intensities of the Al (200) plane, Al (311) plane, Al (220) plane, and Al (111) plane of the sputtering surface of the Al-Nd alloy sputtering target of the component composition described later It has been found that the Al—Nd alloy sputtering target can be realized by controlling so as to satisfy the relationship of the following formula (1) and controlling the Vickers hardness to 29 or more and 36 or less.
I _{Al (200)} > I _{Al (311)} > I _{Al (220)} > I _{Al (111)} (1)
In the formula, I _{Al (200)} is the X-ray diffraction peak intensity of the Al (200) plane, I _{Al (311)} is the X-ray diffraction peak intensity of the Al (311) plane, I _{Al (220)} is Al (220 ₎ I _{Al (111)} represents the X-ray diffraction peak intensity of the Al (111) plane.

Furthermore, it has been found that the film forming rate can be further increased by controlling the average crystal grain size of the Al—Nd alloy sputtering target to preferably 10 μm or more and 100 μm or less, and completed the present invention.

In the present specification, the characteristic capable of forming an Al—Nd alloy thin film at high speed is sometimes referred to as “having a high deposition rate”.

Hereinafter, the present invention will be described in detail.

First, the X-ray diffraction pattern of the Al—Nd alloy sputtering target will be described. The present invention is characterized in that the magnitude relationship of X-ray diffraction peak intensities satisfies I _{Al (200)} > I _{Al (311)} > I _{Al (220)} > I _{Al (111)} .

The process of finding out that a high deposition rate can be realized by satisfying the magnitude relationship between the X-ray diffraction peak intensities is as follows.
(A) It has been known that the collision energy of Ar ions at the time of sputtering is efficiently transmitted in the direction in which the degree of atomic packing of the metal crystal face is high.
(B) In particular, in the order of (200), (311), (220), and (111) planes of the crystal plane of Al, the degree of atomic packing in the direction of the normal to the crystal plane is high. It has been known that the collision energy can be transmitted more efficiently.
(C) However, in the case of an Al-based alloy sputtering target, for example, in a Si-containing Al-based sputtering target, there is a technique in which the ratio of the crystal orientation of <111> is increased to improve the deposition rate. There is also a technology in which it is preferable that the ratio of crystal orientations of <111> be low. As described above, the relationship between the crystal orientation and the deposition rate was often unknown. As a result of intensive investigations on the relationship between the crystal plane and the deposition rate, the present inventor found that in the Al-Nd alloy sputtering target, the atomic filling degree in the direction normal to the crystal plane of Al is in the order of high (200) plane (311 It has been found that by satisfying the magnitude relationship of the above-mentioned X-ray diffraction peak intensities of the (220) plane and the (111) plane, many sputtered particles can be ejected, and a high deposition rate can be realized. In the X-ray diffraction pattern in the measurement range 2θ = 30 to 90 ° of X-ray diffraction, the magnitude relationship is the (200) plane, the (311) plane, and the (220) plane among a plurality of peaks including the (222) plane and the like. ) And (111) planes are selected and determined by comparing X-ray diffraction peak intensities.

Next, the Vickers hardness Hv of the Al—Nd alloy sputtering target will be described. When the Vickers hardness of the Al-Nd alloy sputtering target exceeds 36, collision energy of Ar ion at the time of sputtering is not efficiently propagated, and sputtered particles are hard to be ejected from the sputtering target, so a high deposition rate can not be obtained. . Therefore, in the present invention, the upper limit of the Vickers hardness is set to 36 or less. The upper limit of Vickers hardness is preferably 35 or less, more preferably 34 or less, and still more preferably 33 or less.

However, even if the Vickers hardness is less than 29, the collision energy of Ar ions at the time of sputtering is not efficiently propagated when the Vickers hardness is too low, and sputtered particles are hardly ejected from the sputtering target. Therefore, the lower limit of Vickers hardness is set to 29 or more. The lower limit of the Vickers hardness is preferably 30 or more, more preferably 31 or more.

The average crystal grain size of the Al—Nd alloy sputtering target is preferably 10 μm or more and 100 μm or less from the viewpoint of securing an excellent high deposition rate. If it is less than 10 μm, collision energy of Ar ions at the time of sputtering is not efficiently propagated, and sputtered particles are hardly ejected from the sputtering target. As a result, since a high deposition rate may not be obtained in some cases, the thickness is preferably 10 μm or more as described above. The lower limit of the average crystal grain size is more preferably 20 μm or more, still more preferably 30 μm or more, and still more preferably 40 μm or more.

On the other hand, even if the average crystal grain size is too large and exceeds 100 μm, the collision energy of Ar ions at the time of sputtering is not efficiently propagated, and sputtered particles are hardly ejected from the sputtering target. As a result, since it is difficult to obtain a high deposition rate, the thickness is preferably 100 μm or less as described above. The upper limit of the average crystal grain size is more preferably 90 μm or less, still more preferably 80 μm or less.

In addition, the said average grain size is calculated | required as follows. Take an optical micrograph of the sputtering surface of the Al-Nd alloy sputtering target. The crystal grain size can be determined more accurately as the magnification of the microscope is larger, and usually, it is set to about 100 to 500 times. Next, draw four or more straight lines in the shape of a well in the obtained photograph. The crystal grain size can be determined more accurately as the number of straight lines increases. The number n of crystal grain boundaries on the straight line is examined, and the crystal grain diameter d is calculated based on the following equation for each straight line. Thereafter, the average value of the crystal grain diameter d determined from each of a plurality of straight lines is taken as the average crystal grain diameter of the sputtering target.
d (unit: μm) = L / n / m
In the formula, L represents a linear length L, n represents the number n of grain boundaries on the straight line, and m represents a magnification of an optical micrograph.

Next, the component composition of the Al—Nd alloy sputtering target according to the present invention and the reason for limitation will be described.

The sputtering target of the present invention is made of an Al alloy containing 0.1% to 3% of Nd in atomic percent. Hereinafter, "%" means "atomic%" about a chemical component.

[Nd: 0.1% to 3%]
Nd is an element that prevents hillocks and is useful for improving heat resistance. If the content in the Al alloy is less than 0.1%, it is not possible to form an Al alloy thin film having high heat resistance. Therefore, the lower limit of the Nd content is 0.1% or more. The lower limit of the Nd content is preferably 0.15% or more, more preferably 0.20% or more. On the other hand, when the Nd content exceeds 3%, an Al alloy thin film having a low electrical resistivity can not be formed. Therefore, the upper limit of the Nd content is 3% or less. The upper limit of the Nd content is preferably 2% or less, more preferably 1% or less.

The contained elements specified in the present invention are as described above, and the balance is Al and unavoidable impurities. As unavoidable impurities, it is possible to allow mixing of elements brought in from raw materials, materials, manufacturing facilities and the like, for example, elements such as Fe, Si, Cu, C, O, N and the like.

The Al-Nd alloy sputtering target may be an Al alloy sputtering target substantially consisting only of Al and Nd as described above, but even if it contains the following elements within a range that does not adversely affect the present invention good.

[Ti: 0.0005% or more and 0.01% or less]
Ti is an element effective for refining Al crystal grains. In order to exert such effects effectively, the lower limit of the Ti content is preferably 0.0005% or more, more preferably 0.0010% or more. However, when the Ti content is excessive, an Al alloy thin film having a low electrical resistivity can not be formed. Therefore, the upper limit of the Ti content is preferably 0.01% or less, more preferably 0.005% or less.

[B: 0.0005% or more and 0.01% or less]
B is an element effective for refining Al crystal grains. In order to exert such effects effectively, the lower limit of the B content is preferably 0.0005% or more, more preferably 0.0010% or more. However, when the B content is excessive, an Al alloy thin film having low electrical resistivity can not be formed. Therefore, the upper limit of the B content is preferably 0.01% or less, more preferably 0.005% or less.

The shape of the sputtering target is not particularly limited, and may be various shapes known in the art, such as a flat plate such as a circular plate and a square plate, and a cylindrical shape. For example, it can be in the shape of a disc. Such a disk-shaped sputtering target, for example, rounds off a cylindrical forged body whose metal structure and Nd distribution are equalized by forging and heat treatment; for example, the metal structure and Nd distribution are equalized by rolling and heat treatment A flat plate-shaped rolled body is round-cut; or a flat-plate-shaped rolled body with uniformed metal structure and Nd distribution by forging, rolling and heat treatment; The system thin film can be formed continuously and stably.

The Al—Nd alloy sputtering target of the present invention is preferably used for forming a lead-out wiring film of a touch panel and a wiring film of a touch panel sensor which are required to improve productivity, particularly a high deposition rate. By using the lead wiring film and the wiring film of the touch panel sensor, the productivity of the touch panel can be remarkably improved.

Next, a method of producing the Al-Nd alloy sputtering target will be described. The Al-Nd alloy sputtering target of the present invention melts and casts an Al material and an Nd material into the atmosphere, performs at least one plastic working of forging and rolling, heat treats, and machine, if necessary It can be manufactured by bonding to a backing plate.

For example, the Al—Nd alloy sputtering target of the present invention can be manufactured under the following conditions.

The Al material and the Nd material are melted in the air, and an ingot with a thickness of 150 to 180 mm is formed by DC (Direct Chill Casting) casting, and then cold forging and hot rolling are performed for annealing. Then, machining such as rounding and lathing may be performed to manufacture an Al—Nd alloy sputtering target.

Among these, in order to secure the X-ray diffraction pattern and Vickers hardness of the above-mentioned formula (1), the upper limit and the lower limit of the heating temperature and reduction ratio of hot rolling and the upper limit and the lower limit of the heating temperature of annealing are particularly described below. It is important to control in the range of Hereafter, the process after cold forging is explained in full detail.

Working ratio of cold forging: 30 to 50%
When the working ratio of cold forging is too low, an average grain size of 10 μm to 100 μm can not be obtained. Therefore, the lower limit of the working ratio of cold forging is preferably 30% or more, more preferably 35% or more. On the other hand, if the working ratio of cold forging is too high, breakage such as cracking occurs. Therefore, the upper limit of the working ratio of cold forging is preferably 50% or less, more preferably 45% or less.

The working ratio of cold forging is determined by the following equation.
Machining ratio (%) = 100 × (thickness before cold forging start-cold forging completed thickness) / thickness before cold forging start

Heating temperature of hot rolling: 350 to 450 ° C
When the heating temperature of the hot rolling falls below 350 ° C., the X-ray diffraction peak intensity of the Al (200) surface decreases, and the X-ray diffraction pattern of the above formula (1) can not be obtained. Specifically, the X-ray diffraction peak of the Al (200) plane is smaller than the X-ray diffraction peak of the Al (311) plane. Therefore, the lower limit of the heating temperature of hot rolling is 350 ° C. or more. The lower limit of the heating temperature of hot rolling is preferably 370 ° C. or higher. On the other hand, when the heating temperature for hot rolling exceeds 450 ° C., the X-ray diffraction peak intensity of the Al (111) surface becomes large, and the X-ray diffraction pattern of the above formula (1) can not be obtained. Specifically, the X-ray diffraction peak of the Al (111) plane is larger than the X-ray diffraction peak of the Al (220) plane. Therefore, the upper limit of the heating temperature of hot rolling is set to 450 ° C. or less. The upper limit of the heating temperature for hot rolling is preferably 430 ° C. or less.

Hot rolling reduction ratio: 75 to 95%
When the rolling reduction of the hot rolling is less than 75%, the X-ray diffraction peak intensity of the Al (200) surface becomes small, and the X-ray diffraction pattern of the above formula (1) can not be obtained. Specifically, the X-ray diffraction peak of the Al (200) plane is smaller than the X-ray diffraction peak of the Al (300) plane. Therefore, the lower limit of the rolling reduction of hot rolling is set to 75% or more. The lower limit of the rolling reduction of hot rolling is preferably 77% or more. On the other hand, when the rolling reduction of hot rolling exceeds 95%, fracture such as cracking occurs. Therefore, the upper limit of the rolling reduction of hot rolling is 95% or less. The upper limit of the rolling reduction in hot rolling is preferably 90% or less.

The rolling reduction of the hot rolling is determined by the following equation.
Rolling reduction (%) = 100 × (thickness before rolling start-rolling complete thickness) / thickness before rolling start

Annealing heating temperature: 350 to 450 ° C
When the heating temperature of annealing is below 350 ° C., the average grain size becomes too small and the Vickers hardness becomes too high. Therefore, the lower limit of the heating temperature for annealing is set to 350 ° C. or more. The lower limit of the heating temperature for annealing is preferably 370 ° C. or more. On the other hand, when the heating temperature of annealing exceeds 450 ° C., the average grain size becomes too large and the Vickers hardness becomes too low. Therefore, the upper limit of the heating temperature for annealing is preferably 450 ° C. or less, more preferably 430 ° C. or less.

Annealing heating time: 1.0 hour or more and less than 3.0 hours If the annealing heating time is too short, the average crystal grain size of the Al—Nd alloy sputtering target becomes too small, and the Vickers hardness becomes too high. Therefore, the lower limit of the heating time of annealing is preferably 1.0 hour or more, more preferably 1.2 hours or more. On the other hand, when the heating time of annealing is too long, the average grain size of the Al—Nd alloy sputtering target becomes too large, and the Vickers hardness becomes too low. Therefore, the upper limit of the heating time of annealing is preferably less than 3.0 hours, more preferably 2.8 hours or less.

The present invention will be further described in detail by the following examples, but the following examples do not limit the present invention, and all modifications and variations within the scope of the present invention are included in the technical scope of the present invention. Be done.

[Production of Al-Nd alloy sputtering target]
First, a method of manufacturing an Al—Nd alloy sputtering target will be described.

Prepare the following materials of Al and Nd as raw materials.
(1) Al material: Al having a purity of 99.99 atomic%
(2) Nd material: Nd 99.5 atomic% purity

Using the above-mentioned materials, it was melted in the air and formed into a rectangular plate-shaped ingot of width 300 mm × length 350 mm × thickness 65 mm by a DC casting method. Thereafter, cold forging was performed under the condition of a working ratio of 38% to obtain a square plate-shaped forged body of width 380 mm × length 450 mm × thickness 40 mm. Subsequently, hot rolling was performed under the conditions shown in Table 1 to obtain a hot-rolled sheet having a width of 400 mm and a thickness shown in Table 1. Thereafter, annealing was performed. No. As for No. 3, since the rolling reduction was high due to the hot rolling reduction ratio, it was not possible to proceed to the subsequent steps, and the subsequent tests were not performed.

Then, rolled plate cutting, rounding and lathe processing were performed. Specifically, grinding is performed from the surface layer portion of one side to 0.5 mm in the thickness direction of the rolled plate subjected to cutting and rounding, and 1.0 mm in total on both sides, and one side after grinding is a sputtering surface It lathe processed so that it might become. Thus, a disc-shaped Al—Nd alloy sputtering target having a size of 101.6 mm in diameter × 5.0 mm in thickness was produced. The amount of Nd in the sputtering target thus obtained was analyzed by inductively coupled plasma (ICP) emission spectroscopy.

Physical properties of the sputtering target having a thickness of 5.0 mm obtained above were determined according to the following method.

[X-ray diffraction peak intensity]
The arbitrary four places on the target surface of the sputtering target are analyzed by X-ray diffraction under the conditions shown below, and X-ray diffraction of (111), (200), (220) and (311) planes of Al is carried out. Peak intensity, more specifically, integrated intensity was measured in units of CPS (counts per second). The magnitude relationship between these values was evaluated. As an example thereof, No. 1 in Table 1 which is an example of the present invention. The result of 5 is shown in FIG. In addition, although it analyzed about four places as mentioned above, the magnitude correlation of the said X-ray-diffraction peak intensity of said four places was the same in all targets. That is, in any target, the magnitude relationship between the X-ray diffraction peak intensities at the four analysis locations described above is the same as the magnitude relationship shown in Table 1 at all four locations.

X-ray Diffraction Conditions a) Pretreatment of Test Piece In the present experimental example, the surface of the test piece was smooth, so no pretreatment was performed. When it is desired to remove the influence of cutting strain on the surface of the test piece, it is preferable to etch the surface with wet nitric acid and then to dilute nitric acid as a pretreatment for the test piece.
b) Analyzer "RINT 1500" manufactured by Rigaku Denki Co., Ltd.
c) Analysis condition target: Cu
Monochromization: CuKα ray target output by using monochromator: 40 kV-200 mA
Slit: divergence 1 °, scattering 1 °, light reception 0.15 mm
Scanning speed: 4 ° / min
Sampling width: 0.02 ° Measurement range (2θ): 30 to 90 °

[Vickers hardness]
The Vickers hardness Hv of each sputtering target was measured with a load of 1 kgf using a Vickers hardness tester (AVK-G2, manufactured by Akashi Manufacturing Co., Ltd.).

[Average grain size]
An optical micrograph of the sputtering surface of the sputtering target was taken, and four straight lines in the form of parallel bars were drawn in the obtained photograph. The number n of crystal grain boundaries on the straight line was examined, and the crystal grain diameter d was calculated based on the following equation for each straight line.

d (unit: μm) = L / n / m
In the formula, L represents a linear length L, n represents the number n of grain boundaries on the straight line, and m represents a magnification of an optical micrograph. The average value of the crystal grain size d determined from each of the four straight lines was taken as the average crystal grain size (μm).

[Deposition rate]
The deposition rate of an Al—Nd alloy thin film by DC magnetron sputtering was evaluated using the above-described Al—Nd alloy sputtering target. Specifically, for a glass substrate of 50.0 mm diameter × 0.70 mm thickness, using a sputtering apparatus “Sputtering system HSR-542S” manufactured by Shimadzu Corporation, DC magnetron sputtering is carried out with a film forming time of 120 seconds. Then, an Al-Nd alloy film was obtained.

The sputtering conditions are as follows.
Back pressure: 3.0 × 10 ^-6 Torr or less
Ar gas pressure: 2.25 × 10 ^-3 Torr
Ar gas flow rate: 30 sccm
Sputtering power: DC 260 W
Distance between poles: 51.6 mm
Substrate temperature: room temperature

The film thickness of the deposited Al-Nd alloy thin film is measured with a stylus type film thickness meter, and the film forming speed [nm / s] = film thickness [nm] / (film forming time [s] = 120 seconds) The deposition rate was calculated. Here, it was judged as follows, and A and B were accepted as having a high deposition rate, particularly in the case of A, it was evaluated that the deposition rate was preferable faster, and C was evaluated as a rejection as a deposition rate was slow. The results are shown in Table 1.
A: Deposition speed 2.0 nm / s or more
B ··· Deposition speed is 1.8 nm / s or more and less than 2.0 nm / s
C: Film forming speed less than 1.8 nm / s

The following can be seen from Table 1. Table 1 No. 5, 8 and 11 are examples of the present invention, and since the magnitude relationship of X-ray diffraction peak intensity and Vickers hardness are appropriately controlled, a high deposition rate can be achieved, and the determination is a pass. Since this Al-Nd alloy sputtering target has a high deposition rate, it is possible to improve the productivity of touch panels and the like.

In particular, no. In Nos. 5 and 11, the Vickers hardness is in a more preferable range, and the average crystal grain size is in a still more preferable range, so an extremely high film forming speed can be obtained and the productivity of the touch panel is remarkably improved. It is possible.

On the other hand, No. 1 in Table 1 Since 1, 2, 4, 6, 7, 9, 10 do not satisfy any of the requirements of the present invention, high deposition rates were not obtained.

Table 1 No. No. 1 is a comparative example in which the average crystal grain size is small and the Vickers hardness is high because the annealing heating temperature is low, and a high deposition rate can not be obtained, and the determination is rejection.

No. No. 2 is a comparative example in which the magnitude relationship of the X-ray diffraction peak intensity is not appropriately controlled because the reduction ratio of hot rolling is low, a high deposition rate can not be obtained, and the determination is rejected.

No. No. 4 is a comparative example in which the average crystal grain size is large and the Vickers hardness is low because the heating temperature for annealing is high, and a high deposition rate can not be obtained, and the determination is a rejection.

No. No. 6 is a comparative example in which the magnitude relationship of the X-ray diffraction peak intensity is not appropriately controlled because the heating temperature of hot rolling is low, a high deposition rate can not be obtained, and the determination is a rejection.

No. No. 7 is a comparative example in which the magnitude relationship of the X-ray diffraction peak intensity is not appropriately controlled because the heating temperature of hot rolling is high, a high deposition rate can not be obtained, and the determination is rejected.

No. 9 is a comparative example in which the average crystal grain size is small and the Vickers hardness is high because the annealing heating time is short, and a high deposition rate can not be obtained, and the determination is a rejection.

No. 10 is a comparative example in which the average crystal grain size is large and the Vickers hardness is low because the annealing heating time is long, a high deposition rate can not be obtained, and the determination is a rejection.

No. As for No. 3, since the rolling reduction of hot rolling was high as mentioned above, the crack arose in the rolled sheet.

Although the invention has been described in detail and with reference to specific embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention.
This application is based on Japanese Patent Application (Japanese Patent Application No. 2015-115184) filed on June 5, 2015, the contents of which are incorporated herein by reference.

Since the Al alloy sputtering target of the present invention has a high deposition rate as described above, the productivity of a display device such as a touch panel can be significantly improved.

Claims

An Al alloy sputtering target comprising an Al alloy containing 0.1 atomic% or more and 3 atomic% or less of Nd,
X-ray diffraction peak intensity of Al (200) plane, X-ray diffraction peak intensity of Al (311) plane, X-ray diffraction peak intensity of Al (220) plane, and X of Al (111) plane in X-ray diffraction pattern Line diffraction peak intensity satisfies the relationship of the following formula (1), and
An Al alloy sputtering target characterized by having Vickers hardness Hv of 29 or more and 36 or less.
I Al (200) > I Al (311) > I Al (220) > I Al (111) (1)
In the formula, I Al (200) is the X-ray diffraction peak intensity of the Al (200) plane, I Al (311) is the X-ray diffraction peak intensity of the Al (311) plane, I Al (220) is Al (220 ) I Al (111) represents the X-ray diffraction peak intensity of the Al (111) plane.
The Al alloy sputtering target according to claim 1, wherein the average crystal grain size is 10 μm or more and 100 μm or less.
The Al alloy sputtering target according to claim 1 or 2, which is used for forming a lead-out wiring film of a touch panel and a wiring film of a touch panel sensor.