WO2016188191A1 - 蒸镀装置和蒸镀系统 - Google Patents

蒸镀装置和蒸镀系统 Download PDF

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Publication number
WO2016188191A1
WO2016188191A1 PCT/CN2016/076133 CN2016076133W WO2016188191A1 WO 2016188191 A1 WO2016188191 A1 WO 2016188191A1 CN 2016076133 W CN2016076133 W CN 2016076133W WO 2016188191 A1 WO2016188191 A1 WO 2016188191A1
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Prior art keywords
vapor deposition
heat
injection rate
heating
conductive member
Prior art date
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PCT/CN2016/076133
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English (en)
French (fr)
Inventor
王建强
马群
修海志
吕玉武
闵天圭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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Priority to US15/321,014 priority Critical patent/US20170198389A1/en
Publication of WO2016188191A1 publication Critical patent/WO2016188191A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate

Definitions

  • the present invention relates to the field of vapor deposition of organic materials, and more particularly to an evaporation apparatus and an evaporation system.
  • the field of organic display is developing rapidly, and organic coating is a key factor affecting the field of organic display.
  • the quality of the vapor deposition device directly affects the quality of the organic coating, and the requirements of different materials for the vapor deposition device are different.
  • high-purity organic materials are solid powders, so high-purity organic materials are not suitable for use with some existing vapor deposition devices (such as evaporation boats).
  • the heat conducting portion 120 ′ in the conventional vapor deposition device is generally in the shape of a drum, and the organic material barrel wall and the bottom of the barrel placed in the heat conduction portion of the barrel are easily heated, and the closer to the middle portion, the more susceptible to heat. This results in uneven heating.
  • the temperature of the organic material near the inner wall of the heat conducting portion is first sublimated, and the undistilled organic material forms a cone in the heat conducting portion, and the inner wall of the heat conducting portion is exposed to cause heat loss.
  • materials that sublimate from the bottom of the barrel encounter a material with a lower top temperature that will agglomerate and hinder the ejection of steam.
  • the temperature of the hot portion and the injection portion do not coincide, and when the sublimated organic material encounters the injection portion having a lower temperature, it is easy to cool the agglomerated plugging portion.
  • a vapor deposition apparatus which makes the organic material uniform in heat and can avoid clogging of the ejection portion. It is also desirable to provide a system that automatically controls the temperature and jet speed of the vapor deposition unit.
  • the present invention provides an evaporation device that solves the problem of uneven heating of organic materials existing in the prior art; the present invention also provides an evaporation system that solves the problem of uneven heating of organic materials in the prior art and cannot Automatic control of evaporation rate and degree of heating.
  • an evaporation apparatus comprising:
  • a heat conducting portion including a first heat conductive member and a second heat conductive member surrounding the first heat conductive member and spaced apart from the first heat conductive member by a predetermined distance, the first heat conductive member and the second heat conductive member a space between the vapor deposition material for conducting the heat radiated from the first heating portion to the vapor deposition material and sublimating the evaporation material;
  • An ejection portion for ejecting the vapor deposition material heated and sublimated by the heat transfer portion An ejection portion for ejecting the vapor deposition material heated and sublimated by the heat transfer portion.
  • the first heat transfer portion is columnar and has a circular, elliptical, square, pentagonal or hexagonal cross section.
  • the second heat transfer member is an annular structure centered on the first heat transfer member.
  • the vapor deposition device includes a plurality of the second heat conductive members, and adjacent two of the second heat conductive members are spaced apart by a predetermined distance to form a vapor deposition material. Space.
  • the predetermined distance is 1.0 to 2.0 cm.
  • the second heat conducting member closest to the first heat conducting member is the highest;
  • the height of the second heat conducting member decreases in sequence, so that the plurality of the second heat conducting members are tapered as a whole.
  • the height difference between two adjacent second heat transfer members is 1.0 to 1.5 cm.
  • the injection portion includes a nozzle.
  • the nozzle is provided with a second heating portion.
  • the second heating portion is a thermal resistance wire wound around the nozzle.
  • an evaporation system comprising an evaporation device as described above.
  • the vapor deposition system further includes a monitoring device, a PLC control device, and a temperature controller.
  • the monitoring device is used to monitor the ejection rate of the evaporation material
  • the PLC control device communicates with the monitoring device for receiving the monitoring
  • the injection rate acquired by the device determines the magnitude of the injection rate, and issues an instruction to the temperature controller to adjust the heating temperature of the first heating portion according to the determination result, thereby obtaining a stable injection rate.
  • the PLC control device issues an instruction to the temperature controller to instruct the temperature controller to reduce heating of the first heating portion Temperature, thereby reducing the rate of injection;
  • the PLC control device issues an instruction to the temperature controller to instruct the temperature controller to increase the heating temperature of the first heating portion, thereby increasing the injection rate.
  • the vapor deposition system further includes a pulse current adjustment device
  • the pulse current adjusting device communicates with the PLC control device, and the PLC control device issues an instruction to the pulse current adjusting device according to a determination result of the magnitude of the injection rate to adjust heating of the second heating portion in the injection portion.
  • the temperature is thus obtained to achieve a stable injection rate.
  • the PLC control device issues an instruction to the pulse current adjustment device to instruct the pulse current adjustment device to lower the second heating portion Heating temperature, thereby reducing the injection rate;
  • the PLC control device issues an instruction to the pulse current adjustment device to instruct the pulse current adjustment device to raise the heating temperature of the second heating portion, thereby increasing the injection rate and The clogging of the injection portion is prevented.
  • the advantageous effects of the present invention are as follows:
  • the vapor deposition device according to the present invention can heat the organic material to be vapor-deposited uniformly, and a second heating portion is provided on the ejection portion to prevent clogging of the ejection portion, thereby improving the quality of the plating film.
  • the vapor deposition system according to the present invention can achieve automatic adjustment of the heating rate and the ejection rate, thereby improving the coating quality.
  • FIG. 1 is a schematic cross-sectional view of a heat conducting portion of the prior art
  • FIG. 2 is a schematic cross-sectional view of an evaporation device according to an embodiment of the present invention.
  • FIG. 3 is a perspective view of a heat conducting portion according to an embodiment of the present invention.
  • FIG. 4 is a schematic diagram of an evaporation system in accordance with an embodiment of the present invention.
  • vapor deposition device 100 first heating portion 110, heat transfer portions 120, 120', first heat transfer member 121, second heat transfer member 122, injection portion 130, nozzle 131, second heating portion 140, monitoring device 200
  • the vapor deposition device 100 includes a first heating portion 110 and a heat transfer portion 120.
  • the first heating portion 110 may be disposed under the heat transfer portion 120.
  • the heat conductive portion 120 includes a columnar first heat conductive member 121 and a second heat conductive member 122 that surrounds the first heat conductive member 121 and is spaced apart from the first heat conductive member 121 by a predetermined distance. The space between the first heat conductive member 121 and the second heat conductive member 122 is used to place the vapor deposition material.
  • the heat transfer portion 120 is configured to conduct heat radiated from the first heating portion 110 to the vapor deposition material and sublimate the vapor deposition material.
  • the vapor deposition device 100 further includes an injection portion 130 for ejecting the vapor deposition material heated and sublimated by the heat transfer portion 120.
  • the heat transfer portion is provided with a columnar first heat transfer member 121 and a second heat transfer member 122 surrounding the first heat transfer member 121.
  • the heat-receiving area of the vapor deposition material for example, an organic material placed in the heat transfer portion 120 (the space between the first heat conductive member 121 and the second heat conductive member 122) is increased, the vapor deposition material is more uniformly heated, and the vapor deposition effect is obtained. better.
  • the columnar first heat conducting member 121 the problem that the organic material located in the middle of the heat conducting portion in the prior art is less heated and the remaining tapered organic material remains is overcome.
  • the heat transfer portion 120 may be provided to have a cylindrical shape for heat conduction.
  • the second heat conductive member 122 for containing the vapor deposition material may also be in the shape of a square or a hexagon or the like to surround the columnar first heat conductive member.
  • the second heat conductive member 122 forms a space with the first heat conductive member 121 to hold the organic material, and the second heat conductive member 122 has a heat conducting function.
  • the cross section of the second heat transfer member 122 may be various shapes such as a circle, an ellipse, a quadrangle, a pentagon, a hexagon, and the like, as needed.
  • the material of the heat conducting portion 120 is generally made of aluminum titanium alloy or stainless steel material to make the heat conduction effect better.
  • the second heat conduction The member 122 is an annular structure, and the annular structure is centered on the first heat conductive member 121.
  • the second heat transfer member 122 has an annular structure centered on the first heat transfer member 121. That is, the first heat conducting member 121 has a columnar shape with a circular, elliptical, square, pentagonal, hexagonal, etc. cross section, and the second heat conducting member 122 surrounds the first heat conducting member 121, and the cross sectional pattern thereof is The center point of the pattern is a circle of a center, and the circle surrounds the cross section of the first heat conducting member 121 and does not intersect with it.
  • the second heat conducting members 122 are plural, and the adjacent two second heat conducting members 122 are spaced apart by a predetermined distance to form for placement.
  • the space for the evaporation material is not limited to one of the two second heat conducting members 122.
  • a plurality of second heat transfer members 122 are provided.
  • one, two, and a plurality of second heat conductive members 122 may be provided.
  • the evaporation material is placed between the second heat conduction members 122 or between the second heat conduction members 122 and the first heat conduction members 121, increasing the contact area between the vapor deposition material and the heat conduction portion 120, thereby making the evaporation material uniform in heat, so that The vapor deposited film is more uniform.
  • the predetermined distance is 1.0 to 2.0 cm.
  • the distance between the adjacent two second heat transfer members is small, and the contact area between the vapor deposition material and the heat transfer portion is increased.
  • the second heat conduction member 122 closest to the first heat conduction member 121 is the highest, and the second heat conduction member 122 farthest from the first heat conduction member 121.
  • the vapor deposition device of the present invention when the plurality of second heat transfer members 122 are provided, a plurality of spaces in which the vapor deposition material is placed can be separated to make the vapor deposition material more uniform in heat.
  • the height of the second heat transfer member 122 is sequentially lowered in the direction away from the first heat transfer member 121, so that the heat transfer portion 120 assumes a pyramidal structure. Therefore, it can overcome the problem that the heat conducting portion is only disposed in the peripheral barrel structure in the prior art, and the organic vapor deposition material is piled up into a cone which is difficult to sublimate due to uneven heating.
  • the heights of the plurality of second heat transfer members 122 are sequentially lowered, so that the heat transfer portion 120 as a whole has a pyramidal structure, so that the organic material of the cone portion in the prior art can be uniformly heated, so that all Organic materials Can sublimate and can be sprayed out to form a uniform coating.
  • the height difference between the adjacent two second heat transfer members 122 is 1.0 to 1.5 cm, for example, 1.2 cm.
  • the plurality of second heat conducting members 122 are disposed, the height difference is small, and the heat is uniform, and the problem of the remaining tapered vapor deposition material in the prior art can be completely overcome.
  • the height difference between the adjacent two second heat conducting members 122 is 1.0 to 1.5 cm.
  • the thickness of the second heat conductive member 122 is generally set to 0.3 to 0.5 mm, for example, 0.4 mm.
  • the thickness of the second heat conductive member 122 is relatively thin, so that heat conduction is uniform and the organic material is heated uniformly.
  • the injection portion 130 includes a nozzle 131, and the nozzle 131 is provided with a second heating portion 140.
  • the second heating portion 140 is provided on the nozzle 131, and the temperature of the nozzle 131 is kept relatively constant, and the vapor deposition material is prevented from solidifying and clogging the nozzle 131, thereby overcoming the problem that the nozzle is easily clogged in the prior art.
  • the injection portion 130 includes a nozzle 131, and the nozzle 131 is provided with a second heating portion 140.
  • the second heating portion 140 is a thermal resistance wire, so that the heating time and the period are well controlled, and the problem of nozzle clogging is prevented.
  • the vapor deposition system includes: the vapor deposition device 100, the monitoring device 200, the PLC control device 300, and the temperature controller 400 as described above.
  • the monitoring device 200 is used to monitor the ejection rate of the evaporation material.
  • the PLC control device 300 communicates with the monitoring device 200 for receiving the injection rate acquired by the monitoring device 200.
  • the PLC control device 300 determines the magnitude of the injection rate, and issues an instruction to the temperature controller 400 to adjust the heating temperature of the first heating portion 110 in accordance with the determination result, thereby obtaining a stable injection rate.
  • the PLC control device 300 issues an instruction to the temperature controller 400 instructing the temperature controller 400 to lower the heating temperature of the first heating portion 110, thereby reducing the injection rate.
  • the PLC control device 300 issues an instruction to the temperature controller 400 instructing the temperature controller to increase the heating temperature of the first heating portion 110, thereby increasing the injection rate.
  • the vapor deposition system not only allows the vapor deposition material to be heated uniformly, but also can be automatically controlled.
  • the monitoring device 200 monitors the injection unit 130, collects data of the injection rate, and conveys the collected data to the PLC control device 300.
  • PLC control After the data is processed by 300, if the injection rate is found to be too fast, a temperature drop command is sent to the temperature controller 400, so that the temperature controller 400 lowers the heating temperature to lower the injection rate.
  • the temperature increase command is sent to the temperature controller 400, so that the temperature controller 400 raises the heating temperature to increase the injection rate.
  • the injection rate is kept constant, so that the uniformity of the coating can be improved.
  • the vapor deposition system further includes a pulse current adjustment device 500.
  • the pulse current adjustment device 500 communicates with the PLC control device 300, and the PLC control device 300 issues an instruction to the pulse current adjustment device 500 to adjust the heating temperature of the second heating portion 140 based on the determination result of the injection rate, thereby obtaining a stable injection rate.
  • the PLC control device 300 issues an instruction to the pulse current adjustment device 500 instructing the pulse current adjustment device 500 to lower the heating temperature of the second heating portion 140, thereby reducing the injection rate.
  • the PLC control device 300 issues an instruction to the pulse current adjustment device 500 instructing the pulse current adjustment device 500 to raise the heating temperature of the second heating portion 140, thereby increasing the injection rate and preventing the injection portion 130. Blocked.
  • the vapor deposition system can further prevent the nozzle from being clogged by automatic control.
  • the pulse current adjustment device 500 can be a periodic pulse current adjustment device.
  • the PLC control device 300 issues an instruction to the pulse current adjusting device 500 to enable the second access.
  • the current of the heating device 140 (for example, the thermal resistance wire) is lowered, and the temperature of the nozzle 131 in the injection portion 130 is lowered to lower the ejection rate.
  • the PLC control device 300 When the PLC control device 300 processes the data and finds that the injection rate is low, the PLC control device 300 issues a command to the pulse current adjustment device 500 to increase the current flowing into the second heating device 140, and raises the nozzle 131 in the injection portion 130. The temperature thereby increases the injection rate, prevents the nozzle 131 from being clogged, and maintains a relatively constant injection rate. Even in the case where the nozzle is clogged, the ejection rate is lowered or even the ejection rate is 0 (i.e., the organic material is not ejected), and the organic material blocked on the nozzle 131 is sublimated by adjusting the heating, thereby overcoming the problem that the nozzle is clogged.

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  • Engineering & Computer Science (AREA)
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Abstract

一种蒸镀装置（100），包括：第一加热部（110）；导热部（120），导热部（120）包括第一导热构件（121）以及环绕第一导热构件（121）并与第一导热构件（121）间隔预定距离的第二导热构件（122），第一导热构件（121）与第二导热构件（122）之间的空间用于放置蒸镀材料，导热部（120）用于将第一加热部（110）散发的热量传导至蒸镀材料并使蒸镀材料升华；喷射部（130），喷射部（130）用于将通过导热部（120）加热升华的蒸镀材料喷出。以及一种包括蒸镀装置（100）的蒸镀系统。

Description

蒸镀装置和蒸镀系统 技术领域
本发明涉及有机材料的蒸镀领域，尤其涉及一种蒸镀装置和蒸镀系统。
背景技术
目前，有机显示领域在快速发展，而有机镀膜则成为影响有机显示领域的关键因素。在有机镀膜过程中，蒸镀装置的好坏直接影响有机镀膜的好坏，且不同材料对蒸镀装置的要求各不相同。一般高纯度有机材料为固体粉末，因此高纯度的有机材料不适合使用现有的一些蒸镀装置(如蒸发舟)。
如图1所示，现有蒸镀装置中的导热部120′一般为圆桶状，放置在圆桶状导热部内的有机材料桶壁和桶底位置容易受热，而越接近中部越不易受热，因此导致受热不均。靠近导热部内壁的有机材料温度较高最先升华，未蒸出的有机材料在导热部内形成锥状物，导热部内壁裸露从而造成热能损耗。另外，从桶底升华的材料遇到顶部温度较低的材料就会凝聚阻碍蒸汽的喷出。热部和喷射部的温度不一致，当升华的有机材料遇到温度较低的喷射部时容易冷却凝聚堵塞喷射部。目前还没有能自动调节蒸镀装置的温度和喷射速度的系统来实现有机材料镀膜的自动控制。
因此，希望提供一种使有机材料受热均一、且能避免喷射部堵塞的蒸镀装置。另外还希望提供一种能自动控制蒸镀装置温度和喷射速度的系统。
发明内容
本发明提供了一种蒸镀装置解决了现有技术中存在的有机材料受热不均一的问题；本发明还提供了一种蒸镀系统解决了现有技术中有机材料受热不均一的问题以及不能自动控制蒸镀速率和加热程度的问题。
根据本发明的一方面，提供了一种蒸镀装置，该蒸镀装置包括：
第一加热部；
导热部，所述导热部包括第一导热构件以及环绕所述第一导热构件并与所述第一导热构件间隔预定距离的第二导热构件，所述第一导热构件与所述第二导热构件之间的空间用于放置蒸镀材料，所述导热部用于将所述第一加热部散发的热量传导至所述蒸镀材料并使所述蒸镀材料升华；
喷射部，所述喷射部用于将通过所述导热部加热升华的所述蒸镀材料喷出。
例如，根据本发明的蒸镀装置，所述第一导热部是柱状的，其横截面为圆形、椭圆形、方形、五边形或六边形。
例如，根据本发明的蒸镀装置，所述第二导热构件为环状结构，所述环状结构以所述第一导热构件为中心。
例如，根据本发明的蒸镀装置，所述蒸镀装置包括多个所述第二导热构件，并且相邻两个所述第二导热构件之间均间隔预定距离以形成用于放置蒸镀材料的空间。
例如，根据本发明的蒸镀装置，所述预定距离为1.0～2.0cm。
例如，根据本发明的蒸镀装置，其中
与所述第一导热构件距离最近的第二导热构件最高；
与所述第一导热构件距离最远的第二导热构件最低；且
随所述第二导热构件与所述第一导热构件距离的增加，所述第二导热构件的高度依次降低，使多个所述第二导热构件整体呈锥状。
例如，根据本发明的蒸镀装置，相邻两个所述第二导热构件之间的高度差为1.0～1.5cm。
例如，根据本发明的蒸镀装置，所述喷射部包括喷嘴。
例如，根据本发明的蒸镀装置，所述喷嘴设置有第二加热部。
例如，根据本发明的蒸镀装置，所述第二加热部为环绕在所述喷嘴上的热电阻丝。
根据本发明的另一方面，提供了一种蒸镀系统，该蒸镀系统包括如上所述的蒸镀装置。
例如，根据本发明的蒸镀系统，该蒸镀系统进一步包括监控装置、PLC控制装置及温度控制器，
其中所述监控装置用于监控蒸镀材料的喷射速率，以及
所述PLC控制装置与所述监控装置进行通信，用于接收所述监控 装置获取的喷射速率，并对所述喷射速率的大小进行判断，根据判断结果向所述温度控制器发出指令来调节所述第一加热部的加热温度，从而获得稳定的喷射速率。
例如，根据本发明的蒸镀系统，当所述喷射速率大于第一阈值时，所述PLC控制装置向所述温度控制器发出指令，指示所述温度控制器降低所述第一加热部的加热温度，从而降低喷射速率；以及
当所述喷射速率小于第一阈值时，所述PLC控制装置向所述温度控制器发出指令，指示所述温度控制器提高所述第一加热部的加热温度，从而提高喷射速率。
例如，根据本发明的蒸镀系统，该蒸镀系统进一步包括脉冲电流调节装置；
其中所述脉冲电流调节装置与所述PLC控制装置进行通信，所述PLC控制装置根据对喷射速率大小的判断结果向脉冲电流调节装置发出指令来调节所述喷射部中的第二加热部的加热温度，从而获得稳定的喷射速率。
例如，根据本发明的蒸镀系统，当所述喷射速率大于第二阈值时，所述PLC控制装置向所述脉冲电流调节装置发出指令，指示所述脉冲电流调节装置降低所述第二加热部的加热温度，从而降低喷射速率；以及
当所述喷射速率小于第二阈值时，所述PLC控制装置向所述脉冲电流调节装置发出指令，指示所述脉冲电流调节装置升高所述第二加热部的加热温度，从而提高喷射速率并防止所述喷射部堵塞。
本发明的有益效果如下：根据本发明的蒸镀装置可以使待蒸镀的有机材料受热均匀，并在喷射部上设置第二加热部防止喷射部堵塞，从而提高镀膜的质量。另外，根据本发明的蒸镀系统可以实现自动调节加热速度和喷射速率，从而提高镀膜质量。
附图说明
图1为现有技术的导热部剖面示意图；
图2为根据本发明的一种实施方式的蒸镀装置剖面示意图；
图3为根据本发明的一种实施方式的导热部立体示意图；以及
图4为根据本发明的一种实施方式的蒸镀系统示意图。
具体实施方式
具体的实施方式仅为对本发明的说明，而不构成对本发明内容的限制，下面将结合附图和具体的实施方式对本发明进行进一步说明和描述。
附图标记：蒸镀装置100、第一加热部110、导热部120、120′、第一导热构件121、第二导热构件122、喷射部130、喷嘴131、第二加热部140、监控装置200、PLC(programmable logic controller)控制装置300、温度控制器400、脉冲电流调节装置500。
如图2所示，根据本发明的蒸镀装置100包括第一加热部110和导热部120。例如，第一加热部110可以设置在导热部120下方。导热部120包括柱状的第一导热构件121以及环绕第一导热构件121并与第一导热构件121间隔预定距离的第二导热构件122。第一导热构件121与第二导热构件122之间的空间用于放置蒸镀材料。导热部120用于将第一加热部110散发的热量传导至蒸镀材料并使蒸镀材料升华。该蒸镀装置100还包括喷射部130，用于将通过导热部120加热升华的蒸镀材料喷出。
在根据本发明的蒸镀装置中，导热部设置有柱状的第一导热构件121和围绕第一导热构件121的第二导热构件122。结果，放置在导热部120内(第一导热构件121和第二导热构件122之间的空间)的蒸镀材料(例如有机材料)的受热面积增大，蒸镀材料受热更均匀，蒸镀效果更好。尤其是通过设置柱状的第一导热构件121，克服了现有技术中位于导热部中部的有机材料受热较少从而剩余锥状有机材料的问题。
另外，在根据本发明的蒸镀装置中，导热部120可以设置为具有圆桶状形状用于导热。用于盛放蒸镀材料的第二导热构件122也可以为方形或六边形等形状，以环绕柱状第一导热构件。第二导热构件122与第一导热构件121形成盛放有机材料的空间，并且第二导热构件122更具有导热功能。第二导热构件122的横截面可以为圆形、椭圆形、四边形、五边形、六边形等各种形状，根据需要而定。导热部120的材料一般采用铝钛合金或不锈钢材料制备而成，以使导热效果更好。
根据本发明的一种实施方式的蒸镀装置，如图3所示，第二导热 构件122为环状结构，并且该环状结构以第一导热构件121为中心。
在根据本发明的蒸镀装置100中，第二导热构件122为环状结构，环状结构以第一导热构件121为中心。即，第一导热构件121为柱状，其横截面为圆形、椭圆形、方形、五边形、六边形等形状，第二导热构件122环绕第一导热构件121，其横截面图形为以该图形的中心点为圆心的圆形，且该圆形环绕第一导热构件121截面图且不与其存在交叉。
根据本发明一种实施方式的蒸镀装置100，如图3所示，所述第二导热构件122为多个，相邻两个第二导热构件122之间均间隔预定距离以形成用于放置蒸镀材料的空间。
根据本发明的蒸镀装置100，设置多个第二导热构件122。例如，可以设置为一个、两个及多个第二导热构件122。蒸镀材料放置在第二导热构件122之间或第二导热构件122与第一导热构件121之间，增大了蒸镀材料与导热部120的接触面积，从而使蒸镀材料受热均一，使得到的蒸镀膜更加均匀。
在根据本发明的一种实施方式的蒸镀装置中，该预定距离为1.0～2.0cm。
在根据本发明的蒸镀装置中，相邻两个第二导热构件之间的距离较小，蒸镀材料与导热部接触面积增大。
根据本发明的一种实施方式的蒸镀装置，如图3所示，与第一导热构件121距离最近的第二导热构件122最高，与第一导热构件121距离最远的第二导热构件122最低，并且随第二导热构件122与第一导热构件121距离的增加，第二导热构件122的高度依次降低，使多个第二导热构件122整体呈锥状轮廓。
根据本发明的蒸镀装置，当设置多个第二导热构件122时，可以隔出多个放置蒸镀材料的空间，使蒸镀材料受热更加均一。根据本发明的蒸镀装置，第二导热构件122的高度在远离第一导热构件121的方向上依次降低，使导热部120呈现锥体结构。藉此可以克服现有技术中导热部仅设置成外围桶状结构由于受热不均会使有机蒸镀材料堆积为锥体很难升华掉的问题。采用本发明的蒸镀装置，多个第二导热构件122的高度依次降低，使导热部120整体呈锥体结构后，从而使现有技术中的锥体部分有机材料能够受热均一，使全部的有机材料都 能升华并能喷射出去形成均一的镀膜。
在根据本发明的一种实施方式的蒸镀装置中，相邻两个第二导热构件122之间的高度差为1.0～1.5cm，例如为1.2cm。
根据本发明的一种实施方式，设置多个第二导热构件122，高度差较小，受热均一，可以完全克服掉现有技术中剩余锥状蒸镀材料的问题。根据本发明的实施方式，相邻两个第二导热构件122之间的高度差为1.0～1.5cm。第二导热构件122的厚度一般设置为0.3-0.5mm，例如为0.4mm。第二导热构件122的厚度比较薄，使得导热均匀并且使有机材料受热均一。
根据本发明一种实施方式的蒸镀装置，如图2所示，喷射部130包括喷嘴131，喷嘴131上设置了第二加热部140。
根据本发明的蒸镀装置，在喷嘴131上设置第二加热部140，保持喷嘴131温度比较恒定，防止蒸镀材料凝固堵塞喷嘴131，克服了现有技术中喷嘴容易堵塞的问题。
根据本发明一种实施方式的蒸镀装置，如图2所示，喷射部130包括喷嘴131，喷嘴131上设置了第二加热部140。
根据本发明的蒸镀装置，第二加热部140为热电阻丝会，使得加热时间和周期好控制，防止了喷嘴堵塞的问题。
根据本发明的另一方面，提供了一种蒸镀系统，如图4所示，该蒸镀系统包括：如上所述的蒸镀装置100、监控装置200、PLC控制装置300及温度控制器400。监控装置200用于监控蒸镀材料的喷射速率。PLC控制装置300与监控装置200进行通信，用于接收监控装置200获取的喷射速率。PLC控制装置300对喷射速率的大小进行判断，并且根据判断结果向温度控制器400发出指令来调节第一加热部110的加热温度，从而获得稳定的喷射速率。当喷射速率大于第一阈值时，PLC控制装置300向温度控制器400发出指令，指示温度控制器400降低第一加热部110的加热温度，从而降低喷射速率。当喷射速率小于第一阈值时，PLC控制装置300向温度控制器400发出指令，指示温度控制器提高第一加热部110的加热温度，从而提高喷射速率。
该蒸镀系统不仅可以使蒸镀材料受热均一，而且可以进行自动化控制。监控装置200对喷射部130进行监控，对喷射速率的数据进行采集，并且将采集得到的数据输送至PLC控制装置300。PLC控制装 置300对数据进行处理后如果发现喷射速率过快则向温度控制器400发送降温指令，使得温度控制器400使加热温度降低从而降低喷射速率。当PLC控制装置300对数据进行处理后发现喷射速率过慢时，向温度控制器400发送升温指令，使得温度控制器400使加热温度升高从而升高喷射速率。通过对PLC控制装置300进行温度和喷射速率的设置，使喷射速率保持恒定，从而可以提高镀膜的均一性。
在根据本发明一种实施方式的蒸镀系统中，如图4所示，该蒸镀系统进一步包括脉冲电流调节装置500。脉冲电流调节装置500与PLC控制装置300进行通信，PLC控制装置300根据对喷射速率大小的判断结果向脉冲电流调节装置500发出指令来调节第二加热部140的加热温度，从而获得稳定的喷射速率。当喷射速率大于第二阈值时，PLC控制装置300向脉冲电流调节装置500发出指令，指示脉冲电流调节装置500降低第二加热部140的加热温度，从而降低喷射速率。当喷射速率小于第二阈值时，PLC控制装置300向脉冲电流调节装置500发出指令，指示脉冲电流调节装置500升高第二加热部140的加热温度，从而提高喷射速率并防止所述喷射部130堵塞。
根据本发明的蒸镀系统，该蒸镀系统进一步可以通过自动控制而防止喷嘴被堵塞。根据本发明的蒸镀系统，脉冲电流调节装置500可以为周期性脉冲电流调节装置。当监控装置200检测到的数据输送至PLC控制装置300中，并且PLC控制装置300对数据进行处理后发现喷射速率偏高时，PLC控制装置300向脉冲电流调节装置500发出指令使通入第二加热装置140(例如，热电阻丝)的电流降低，降低喷射部130中喷嘴131的温度从而降低喷射速率。当PLC控制装置300对数据进行处理后发现喷射速率偏低时，PLC控制装置300对脉冲电流调节装置500发出指令使通入第二加热装置140的电流增加，升高喷射部130中喷嘴131的温度从而升高喷射速率，防止喷嘴131被堵塞，并保持相对较为恒定的喷射速率。即使在喷嘴被堵塞的情况下，喷射速率降低甚至喷射速率为0(即不喷射有机材料)，通过调节加热，使堵塞在喷嘴131上的有机材料升华，从而克服了喷嘴被堵塞的问题。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于 本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (15)

  1. 一种蒸镀装置，包括：
    第一加热部；
    导热部，所述导热部包括第一导热构件以及环绕所述第一导热构件并与所述第一导热构件间隔预定距离的第二导热构件，所述第一导热构件与所述第二导热构件之间的空间用于放置蒸镀材料，所述导热部用于将所述第一加热部散发的热量传导至所述蒸镀材料并使所述蒸镀材料升华；以及
    喷射部，所述喷射部用于将通过所述导热部加热升华的所述蒸镀材料喷出。
  2. 如权利要求1所述的蒸镀装置，其中所述第一导热部是柱状的，其横截面为圆形、椭圆形、方形、五边形或六边形。
  3. 如权利要求1所述的蒸镀装置，其中所述第二导热构件为环状结构，所述环状结构以所述第一导热构件为中心。
  4. 如权利要求3所述的蒸镀装置，其中所述蒸镀装置包括多个所述第二导热构件，并且相邻两个所述第二导热构件之间均间隔预定距离以形成用于放置蒸镀材料的空间。
  5. 如权利要求4所述的蒸镀装置，其中所述预定距离为1.0～2.0cm。
  6. 如权利要求4所述的蒸镀装置，其中
    与所述第一导热构件距离最近的第二导热构件最高；
    与所述第一导热构件距离最远的第二导热构件最低；且
    随所述第二导热构件与所述第一导热构件距离的增加，所述第二导热构件的高度依次降低，使多个所述第二导热构件整体呈锥状。
  7. 如权利要求6所述的蒸镀装置，其中相邻两个所述第二导热构件之间的高度差为1.0～1.5cm。
  8. 如权利要求1所述的蒸镀装置，其中所述喷射部包括喷嘴。
  9. 如权利要求8所述的蒸镀装置，其中所述喷嘴设置有第二加热部。
  10. 如权利要求9所述的蒸镀装置，其中所述第二加热部为环绕在所述喷嘴上的热电阻丝。
  11. 一种蒸镀系统，包括如权利要求1-10中任意一项所述的蒸镀装置。
  12. 如权利要求11所述的蒸镀系统，进一步包括监控装置、PLC控制装置和温度控制器，
    其中所述监控装置用于监控蒸镀材料的喷射速率，以及
    所述PLC控制装置与所述监控装置进行通信以接收所述监控装置获取的喷射速率，对所述喷射速率的大小进行判断，并且根据判断结果向所述温度控制器发出指令来调节所述第一加热部的加热温度，从而获得稳定的喷射速率。
  13. 如权利要求12所述的蒸镀系统，其中，
    当所述喷射速率大于第一阈值时，所述PLC控制装置向所述温度控制器发出指令，指示所述温度控制器降低所述第一加热部的加热温度，从而降低喷射速率；以及
    当所述喷射速率小于第一阈值时，所述PLC控制装置向所述温度控制器发出指令，指示所述温度控制器提高所述第一加热部的加热温度，从而提高喷射速率。
  14. 如权利要求12所述的蒸镀系统，进一步包括脉冲电流调节装置，
    其中所述脉冲电流调节装置与所述PLC控制装置进行通信，所述PLC控制装置根据对喷射速率大小的判断结果向脉冲电流调节装置发出指令来调节所述喷射部中的第二加热部的加热温度，从而获得稳定的喷射速率。
  15. 如权利要求14所述的蒸镀系统，其中
    当所述喷射速率大于第二阈值时，所述PLC控制装置向所述脉冲电流调节装置发出指令，指示所述脉冲电流调节装置降低所述第二加热部的加热温度，从而降低喷射速率；以及
    当所述喷射速率小于第二阈值时，所述PLC控制装置向所述脉冲电流调节装置发出指令，指示所述脉冲电流调节装置升高所述第二加热部的加热温度，从而提高喷射速率并防止所述喷射部堵塞。
PCT/CN2016/076133 2015-05-25 2016-03-11 蒸镀装置和蒸镀系统 Ceased WO2016188191A1 (zh)

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CN104831237B (zh) * 2015-05-25 2017-02-22 京东方科技集团股份有限公司 一种蒸镀装置和蒸镀系统
CN105648404B (zh) * 2016-03-21 2018-11-20 深圳市华星光电技术有限公司 蒸镀坩埚
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