WO2016188183A1 - 彩膜基板及其制造方法、显示装置 - Google Patents

彩膜基板及其制造方法、显示装置 Download PDF

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Publication number
WO2016188183A1
WO2016188183A1 PCT/CN2016/075968 CN2016075968W WO2016188183A1 WO 2016188183 A1 WO2016188183 A1 WO 2016188183A1 CN 2016075968 W CN2016075968 W CN 2016075968W WO 2016188183 A1 WO2016188183 A1 WO 2016188183A1
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Prior art keywords
layer
photonic crystal
light
luminescent medium
transflective
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Ceased
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PCT/CN2016/075968
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English (en)
French (fr)
Inventor
张晓晋
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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Priority to US15/322,688 priority Critical patent/US10267964B2/en
Publication of WO2016188183A1 publication Critical patent/WO2016188183A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/32—Photonic crystals

Definitions

  • the present invention relates to the field of liquid crystal display technology, and in particular, to a color film substrate, a method for manufacturing the same, and a display device.
  • LCDs liquid crystal displays
  • the LCD generally includes an array substrate and a color filter substrate disposed opposite the cartridge, and a liquid crystal layer filled between the array substrate and the color filter substrate.
  • the LCD adjusts the light from the backlight for image display.
  • the backlight is a white-emitting LED backlight that is formed from a blue electroluminescent chip in combination with a yellow phosphor.
  • the color filter of the color film in the existing color filter substrate has a low color filter capability, and the half-height width of the spectrum of the light formed by the white light through the color filter color filter is large, the saturation of the LCD is low, and the white light LED is The backlight consumes a lot of energy.
  • the color filter capability of the color film is low, the half-height width of the spectrum of the light formed by the white light through the color filter color filter is large, and the saturation of the LCD is low, and
  • the invention provides a color film substrate, a manufacturing method thereof, and a display device.
  • a color film substrate comprising:
  • the illuminating medium layer being capable of emitting light of a corresponding color under excitation of light of the backlight
  • the photonic crystal layer is configured to reflect light emitted by the luminescent medium layer to the transflective layer such that light oscillates and interferes between the photonic crystal layer and the transflective layer, Finally, it is emitted from the transflective layer.
  • the photonic crystal layer satisfies the condition that the transmittance of light from the backlight is greater than 60% and the reflectance of light from the luminescent medium layer is greater than 80%.
  • the photonic crystal layer is a one-dimensional photonic crystal layer; the transflective layer is a transflective layer; and the luminescent medium layer is a photoluminescent layer.
  • the photonic crystal layer is formed by periodically laminating at least two layers of light transmissive materials having different refractive indices.
  • the photonic crystal layer includes a plurality of photonic crystal substructures corresponding to each of the luminescent medium layers;
  • each of the photonic crystal substructures is formed by periodically laminating at least two light transmissive material layers having different refractive indices, and the light transmissive material layer in each of the photonic crystal substructures is at least five layers;
  • optical forbidden bands of any two photonic crystal substructures have different forbidden bands and overlap regions, and the reflectance of light of any of the photonic crystal substructures is positively correlated with the number of layers of the light transmissive material layer.
  • the types of light transmissive materials used in each of the photonic crystal substructures are the same, and the light transmissive material layer in each of the photonic crystal substructures has a maximum of ten layers;
  • the transflective layer is an Ag or Al layer having a thickness ranging from 10 to 15 nm.
  • the thickness D of the luminescent medium layer satisfies the following formula:
  • ⁇ is a cumulative phase change when the light emitted by the luminescent medium layer is reflected on the reflective interface
  • n is a refractive index corresponding to a main peak wavelength of the light emitted by the luminescent medium layer
  • the reflective interface includes: the photon An interface between the crystal layer and the luminescent medium layer and an interface between the transflective layer and the luminescent medium layer.
  • the color filter substrate further includes a cover layer on the transflective layer.
  • the plurality of luminescent medium layers include a luminescent medium layer that emits red light corresponding to different color pixels, a luminescent medium layer that emits green light, and a luminescent medium layer that emits blue light, wherein each of the luminescent mediums
  • the layer is composed of a phosphor layer, a phosphor layer or a quantum dot layer.
  • a display device comprising: an array substrate and a color filter substrate disposed on a cartridge, wherein the color filter substrate is the color filter substrate described above.
  • the display device further includes: a backlight
  • the backlight is disposed on a backlight side of the array substrate
  • the light emitted by the backlight is blue-violet light having a wavelength of less than 430 nanometers
  • the photonic crystal layer is a photonic crystal layer capable of reflecting light having a wavelength greater than 430 nanometers.
  • each of the illuminating medium layers being capable of emitting light of a corresponding color under excitation of light of the backlight;
  • the photonic crystal layer is configured to reflect light emitted by the luminescent medium layer to the transflective layer, such that light oscillates and interferes between the photonic crystal layer and the transflective layer, and finally Ejected from the transflective layer.
  • forming a transflective layer on the luminescent medium layer includes: forming a silver or aluminum layer having a thickness of 10-15 nm on the luminescent medium layer by means of over-vacuum thermal evaporation, such that silver or aluminum The reflectance of the layer is in the range of 60% to 70%.
  • forming a plurality of luminescent medium layers corresponding to different color pixels on the photonic crystal layer includes:
  • a plurality of phosphor layers, phosphor layers or quantum dot layers corresponding to different color pixels are formed on the photonic crystal layer.
  • the method of manufacturing further includes the step of forming a cap layer on the transflective layer.
  • the luminescent medium layer can emit light of a corresponding color under the excitation of the light of the backlight, and the photonic crystal layer is used to emit the luminescent medium layer.
  • the light is reflected multiple times to the transflective layer, so that the light oscillates and interferes between the photonic crystal layer and the transflective layer, and finally exits from the transflective layer.
  • the invention solves the problem that the spectrum of the color light formed by the white light color filter through the color filter is larger in the prior art, the saturation of the LCD is lower, and the energy consumption of the white LED backlight is higher. At least a part of the problem partially achieves the full width at half maximum of the spectrum of the reduced color light, improving the saturation and energy saving effects of the LCD.
  • FIG. 1 is a schematic structural view of a color filter substrate according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural view of a color filter substrate according to another embodiment of the present invention.
  • FIG. 3 is a schematic structural view of the photonic crystal layer shown in FIG. 2;
  • FIG. 4 is an optical forbidden band overlay of two photonic crystal substructures having different center wavelengths as shown in FIG. 3;
  • Figure 5 is a graph showing the relationship between the number of repeating layers in the photonic crystal substructure shown in Figure 3 and the reflectance of the photonic crystal substructure to the light emitted from the luminescent medium layer;
  • FIG. 6 is a flow chart of a method for manufacturing a color filter substrate according to an embodiment of the present invention.
  • FIG. 7 is a flow chart of a method for manufacturing a color filter substrate according to another embodiment of the present invention.
  • FIG. 8 is a schematic structural view of a photonic crystal layer formed on a substrate according to an embodiment of the present invention.
  • FIG. 9 is a schematic structural view showing a luminescent medium layer formed on the photonic crystal layer shown in FIG. 8; FIG.
  • Figure 10 is a schematic view showing the structure after forming a transflective layer on the luminescent medium layer shown in Figure 9;
  • Figure 11 is a schematic view showing the structure after forming a cover layer on the transflective layer shown in Figure 10;
  • FIG. 12 is a schematic structural diagram of a display device according to an embodiment of the present invention.
  • FIG. 13 is a schematic structural diagram of a display device according to another embodiment of the present invention.
  • a color film substrate 01 includes: a substrate 010, which may be a transparent substrate, which may be a non-metallic material using a light guide material having a certain firmness.
  • a substrate made of quartz, transparent resin, or the like.
  • the color filter substrate further includes a photonic crystal layer 011 on the base substrate 010; a plurality of luminescent medium layers 012 located on the photonic crystal layer 011 corresponding to different color pixels, and the luminescent medium layer 012 can be excited by the light of the backlight The light of the corresponding color is emitted; the transflective layer 013 is located on the luminescent medium layer 012.
  • the photonic crystal layer 011 is for reflecting light (one or more times) emitted from the luminescent medium layer 012 to the transflective layer 013 such that the light oscillates and interferes between the photonic crystal layer 011 and the transflective layer 013. Finally, it is shot from the transflective layer 013.
  • a microcavity may be formed between the photonic crystal layer 011 and the transflective layer 013, and the luminescent medium layer 012 is equivalent to the medium filled in the microcavity.
  • the color film substrate provided by the embodiment of the present invention can form a photonic crystal layer, a luminescent medium layer and a transflective layer on the substrate, and the luminescent medium layer can be emitted under the excitation of the light of the backlight.
  • the photonic crystal layer is used to reflect the multiple times emitted by the luminescent medium layer to the transflective layer, so that the light oscillates and interferes between the photonic crystal layer and the transflective layer, and finally from semi-transparent.
  • the semi-reflective layer is shot.
  • the invention solves the problem that the half-height of the spectrum of the white light colored by the color filter color forming color is larger by the modulation of the microcavity, the saturation of the LCD is lower, and the energy consumption of the white LED backlight is higher. At least a part of the problem partially achieves the half-height of the spectrum of the reduced color light, improving the saturation and energy saving effects of the LCD.
  • FIG. 2 is a schematic structural diagram of another color film substrate 01 according to an embodiment of the invention.
  • the color filter substrate 01 includes a base substrate 010, and the base substrate 010 may be a transparent substrate, and may be a substrate made of a non-metallic material having a certain firmness such as glass, quartz, or transparent resin.
  • the color film substrate 01 further includes a photonic crystal layer 011 on the base substrate 010; a plurality of luminescent medium layers 012 corresponding to different color pixels on the photonic crystal layer 011, and a transflective layer on the luminescent medium layer 012. 013.
  • the luminescent medium layer 012 can emit light of a corresponding color under the excitation of the light of the backlight, and the light of the corresponding color can include any desired color, for example, any one of three colors of red, green, and blue.
  • the photonic crystal layer 011 is used to reflect the light emitted from the luminescent medium layer 12 to the transflective layer 013 multiple times, so that the light oscillates and interferes between the photonic crystal layer 011 and the transflective layer 013, and finally passes through the semi-transparent layer.
  • the semi-reflective layer 013 is emitted.
  • a microcavity may be formed between the photonic crystal layer 011 and the transflective layer 013, and the luminescent medium layer 012 is equivalent to the medium filled in the microcavity.
  • a capping layer (CPL) 014 is further formed on the transflective layer 013.
  • the cover layer 014 is generally formed of a material having a high refractive index and a low extinction coefficient, such as NPB, and the thickness of the cover layer 014 is less than 100 nm in consideration of color differences at different angles.
  • the thickness of the cover layer 014 is 80 nm, forming a cover.
  • the step of layer 014 may include depositing an NPB layer having a thickness of 80 nm on the transflective layer 013 by vacuum thermal evaporation to form a cap layer 014.
  • the photonic crystal layer 011 has a certain optical band gap, and light having a wavelength within the forbidden band of the optical band gap cannot pass through the photonic crystal layer 011, exhibiting high reflectivity, and the wavelength is in the optical band gap. Light outside the forbidden band can pass through the photonic crystal layer 011, exhibiting high transmittance.
  • the photonic crystal layer 011 satisfies the condition that the transmittance of light from the backlight is greater than 60% and the reflectance of light from the luminescent medium layer is greater than 80%.
  • the photonic crystal layer 011 has high transmittance to the light of the backlight, and has high reflectivity to the light emitted from the luminescent medium layer 012, so that the photonic crystal layer 011 can reflect the light emitted from the luminescent medium layer 012 one or more times to half.
  • the photonic crystal layer 011 may be a one-dimensional photonic crystal layer, and the photonic crystal layer 011 may be periodically laminated on the base substrate 010 by using at least two light transmissive material layers having different refractive indices.
  • FIG. 3 is a schematic structural view of the photonic crystal layer 011 shown in FIG. 2 .
  • the photonic crystal layer 011 includes a plurality of photonic crystal substructures 1 to M corresponding to each of the luminescent medium layers 012, M ⁇ 2, and M is an integer.
  • Each photonic crystal substructure 1 comprises: a plurality of repeating layers formed by periodically laminating two layers of light transmissive materials having different refractive indices, and a repeating period of the light transmissive material layer (repetitive layer) in each photonic crystal substructure Is N, N ⁇ 5, and N is a positive integer.
  • the photonic crystal substructure 1 as an example, as shown in FIG.
  • the photonic crystal substructure 1 includes: a repeating layer 1 to a repeating layer N, a total of N repeating layers, each of which includes: layer A and layer B Wherein layer A may be formed using material a and layer B may be formed using material b.
  • the types of light-transmitting materials used in each photonic crystal substructure 1 are the same, and the forbidden band ranges of the optical forbidden bands of any two photonic crystal substructures are different and there are overlapping regions, and any photonic crystal substructure is emitted to the luminescent medium layer 12.
  • the reflectance of the light is positively correlated with the number N of repeating layers.
  • the difference can be made by controlling the thickness of layer A, layer B, and the number of repeating layers in each photonic crystal substructure, that is, controlling the thickness of layer A, layer B, and N in the photonic crystal substructure.
  • the photonic crystal substructure 1 has different forbidden band ranges.
  • a photonic crystal layer may be formed on the substrate 010 by thermal evaporation, electron beam, molecular beam epitaxy, magnetron sputtering, plasma enhanced chemical vapor deposition (PECVD), or the like. 011. Specifically, by using thermal evaporation, electron beam, molecular beam epitaxy, magnetron sputtering, PECVD, etc., two kinds of light-transmissive materials having different thicknesses are deposited on the base substrate 010 to form a photonic crystal layer 011. . For example, referring to FIG.
  • the photonic crystal substructure 1 is taken as an example, and a layer of a certain thickness may be deposited on the substrate 010 by thermal evaporation, electron beam, molecular beam epitaxy, magnetron sputtering, PECVD, or the like.
  • repeat layer 1 is formed; then thermal evaporation, electron beam, and molecule are used.
  • a layer of material a having a certain thickness is deposited on layer B of the repeating layer 1 to form layer A, using thermal evaporation, electron beam, molecular beam epitaxy, magnetron sputtering, A method such as PECVD deposits a material b having a certain thickness on layer A to form layer B.
  • a method such as PECVD deposits a material b having a certain thickness on layer A to form layer B.
  • a repeating layer 2 is formed, and so on, until a repeating layer N is formed, and a photonic crystal substructure is formed when a repeating layer N is formed. 1.
  • a photonic crystal substructure 2 is formed into a photonic crystal substructure M by a formation method similar to that of the photonic crystal substructure 1, thereby forming a photonic crystal layer 011.
  • the material a may be SiO 2
  • the material b may be ZnO or, in another alternative embodiment of the present invention, the material a may be Ta 2 O 5 .
  • the photonic crystal layer 011 is composed of M photonic crystal substructures, and the optical band gaps of any two photonic crystal substructures have different forbidden bands and overlapping regions, so that the photonic crystal layer in the embodiment of the invention
  • the forbidden band range of the optical band gap of 011 can be adjusted such that the photonic crystal layer 011 has a sufficiently large forbidden band range to completely reflect the light emitted from the luminescent medium layer 12.
  • FIG. 4 shows an optical band gap overlay of two photonic crystal substructures having a center wavelength of 650 nm (nanometer) and a center wavelength of 550 nm, see FIG. 4, where ⁇ 0 represents It is the center wavelength of the optical band gap of the photonic crystal substructure.
  • ⁇ 0 represents It is the center wavelength of the optical band gap of the photonic crystal substructure.
  • the optical band gap of the photonic crystal substructure with a center wavelength of 650 nm has a forbidden band range of 560 nm to 780 nm, and the optical structure of the photonic crystal substructure with a center wavelength of 550 nm.
  • the forbidden band of the forbidden band ranges from 470 nm to 660 nm, and the forbidden band of the photonic crystal layer formed by the photonic crystal substructure having a center wavelength of 650 nm and the photonic crystal substructure having a center wavelength of 550 nm is 470 nm to 780 nm, compared to only A photonic crystal layer formed by a photonic crystal substructure, the photonic crystal layer formed by two photonic crystal substructures having different central wavelengths has a larger band gap.
  • the central wavelength refers to the central wavelength of the optical forbidden band.
  • the forbidden band of the optical forbidden band of a photonic crystal substructure is: ⁇ min ⁇ ⁇ max
  • the central wavelength of the optical band gap of the photonic crystal substructure for:
  • the width of the optical band gap of the photonic crystal substructure is:
  • d A + d B 100 to 200 nm
  • d A : d B 0.25 to 4.
  • the photonic crystal layer 011 since the thickness of the photonic crystal layer 011 is 1/4 of the center wavelength of the optical band gap of the photonic crystal layer 011, the photonic crystal layer 011 has the highest reflectance, and therefore, in order to ensure the reflectance of the photonic crystal layer 011, the photonic crystal The thickness of the layer 011 is 1/4 of the center wavelength of the optical band gap of the photonic crystal layer 011.
  • the reflectance of the photonic crystal substructure to the light emitted by the luminescent medium layer 012 is positively correlated with the number N of the repeating layers in the photonic crystal substructure.
  • N the number of the repeating layers in the photonic crystal substructure.
  • the photonic crystal substructure absorbs a part of the light when reflecting the light emitted by the luminescent medium layer 012. Therefore, when the value of N is too large, The light extraction efficiency of the light emitted from the transflective layer 013 is lowered.
  • N is a graph showing the relationship between the number N of repeating layers in the photonic crystal substructure and the reflectance of the photonic crystal substructure to the colored light emitted by the luminescent medium layer 012.
  • N is close to 1, and therefore, in the embodiment of the present invention, N ⁇ 5, considering the light emitted from the transflective layer 013 Efficiency, in the embodiment of the present invention, preferably, 10 ⁇ N ⁇ 6.
  • the luminescent medium layer 012 is formed using a photoluminescent material.
  • the photoluminescent material may be a fluorescent material or a phosphorescent material.
  • the light emitted by the luminescent medium layer 012 may be any one of red, green and blue light, wherein the blue light may be Emitted by a phosphorescent system material, the phosphorescent system material may include: 80% CBP and 20% FIrpic; or, blue light may be emitted from a fluorescent system material including: 95% DSA and 5% DPVBi.
  • the green light may be emitted by a phosphorescent system material, which may include: 95% CBP and 5% Ir(ppy) 3 ; or, green light may also be emitted from a fluorescent system material, the fluorescent system material comprising: 99% Alq 3 and 1% C-545T, C-545T is a soy bean compound.
  • the red light may be emitted by a phosphorescent system material, which may include: 97% CBP and 3% Q 3 Ir; or, red light may also be emitted from a fluorescent system material, the fluorescent system material includes: 98% Alq 3 and 2% DCJTB.
  • the plurality of luminescent medium layers include a luminescent medium layer that emits red light corresponding to different color pixels, a luminescent medium layer that emits green light, and a luminescent medium layer that emits blue light, wherein each of the luminescent medium layers It is composed of a fluorescent layer, a phosphor layer or a quantum dot layer.
  • the absorption spectrum of the photo luminescent material used by the luminescent medium layer 012 and the spectrum of the illuminating illuminating medium 012 have a large spectrum. Overlapping area.
  • the luminescent medium layer 012 The thickness D satisfies the following formula: Where ⁇ is the cumulative phase change of the light emitted by the luminescent medium layer at each reflective interface, that is, the sum of the phase transitions of the light at each reflective interface, and n is the main peak wavelength of the light emitted by the luminescent medium layer 012.
  • the refractive index is exemplified.
  • n is a refractive index corresponding to the main peak wavelength of the red light.
  • the reflective interface includes an interface between the photonic crystal layer 011 and the luminescent medium layer 012 and an interface between the transflective layer 013 and the luminescent medium layer 012. If the refractive index and extinction coefficient of the luminescent medium layer 012 and the transflective layer 013 are (n, k) and (n 1 , k 1 ), respectively:
  • the forming step of the luminescent medium layer 012 may include: depositing a fluorescent material having a thickness D on the photonic crystal layer 011 by thermal evaporation, electron beam, molecular beam epitaxy, magnetron sputtering, PECVD, or the like. Or the phosphor material forms the luminescent medium layer 012.
  • the transflective layer 013 is a semi-transflective metal layer, and the forming material thereof may be Ag or Al, in order to keep the reflectivity of the transflective layer 013 between 50% and 70%.
  • the thickness of the transflective layer 013 may range from 10 to 15 nm.
  • the forming step of the transflective layer 013 may include depositing on the luminescent medium layer 012 by vacuum thermal evaporation.
  • the Ag layer having a thickness of 10 to 15 nm forms a transflective layer 013.
  • FIG. 6 is a flowchart of a method for manufacturing a color filter substrate according to an embodiment of the present invention, wherein the color filter substrate comprises: a substrate, which may be a transparent substrate, which may specifically be glass.
  • a substrate made of a non-metallic material having a certain lightness such as quartz or a transparent resin.
  • the method process specifically includes:
  • Step 601 forming a photonic crystal layer on the base substrate.
  • Step 602 Form a plurality of luminescent medium layers corresponding to different color pixels on the photonic crystal layer, and each illuminating medium layer can emit light of a corresponding color under the excitation of the light of the backlight.
  • Step 603 forming a transflective layer on the luminescent medium layer.
  • the photonic crystal layer is used for reflecting light emitted from the luminescent medium layer to the transflective layer, so that the light oscillates and interferes between the photonic crystal layer and the transflective layer, and finally exits from the transflective layer.
  • FIG. 7 is a flowchart of a method for manufacturing a color filter substrate according to another embodiment of the present invention, wherein the color filter substrate comprises: a base substrate, and the base substrate may be a transparent substrate, which may specifically be glass.
  • the method process specifically includes:
  • Step 701 forming a photonic crystal layer on the base substrate.
  • forming the photonic crystal layer 011 on the base substrate 010 may include: adopting two kinds of refractive indices. Different light transmissive materials are periodically stacked on the base substrate 010 to form M photonic crystal substructures, and each photonic crystal substructure is formed by periodically laminating two layers of light transmissive materials having different refractive indices, each photonic crystal sublayer.
  • the structure includes a plurality of repeating layers, and the repeating period of each of the photonic crystal substructures has a repetition period of N, N ⁇ 5, and N is a positive integer, that is, each photonic crystal substructure includes N repeating layers, In the substructure of each photonic crystal
  • the types of light-transmitting materials used are the same, and the optical forbidden bands of any two photonic crystal substructures are different and there is an overlapping region, and the reflectance of light emitted by any photonic crystal substructure to the luminescent medium layer 012 and the repeating layer are The number N is positively correlated.
  • the photonic crystal layer 010 can be a one-dimensional photonic crystal layer having a transmittance of greater than 60% for light from a backlight.
  • N ⁇ 5, and N is an integer, preferably 10 ⁇ N ⁇ 6.
  • the photonic crystal layer 011 formed on the substrate 010 may include: thermal evaporation, electron beam, molecular beam epitaxy, magnetron sputtering, PECVD, etc. Two kinds of light-transmitting materials having different refractive indices having a certain thickness are alternately deposited on the base substrate 010 to form the photonic crystal layer 011. For example, referring to FIG.
  • the photonic crystal substructure 011 is taken as an example, and a layer of a certain thickness may be deposited on the substrate 010 by thermal evaporation, electron beam, molecular beam epitaxy, magnetron sputtering, PECVD, or the like.
  • Material a forming layer A, and then depositing a layer of material b having a certain thickness on layer A by thermal evaporation, electron beam, molecular beam epitaxy, magnetron sputtering, PECVD, etc., forming layer B, at this time, forming Repeating layer 1; then, using thermal evaporation, electron beam, molecular beam epitaxy, magnetron sputtering, PECVD, etc., a layer of material a having a certain thickness is deposited on layer B of the repeating layer 1 to form layer A, and then Thermal evaporation, electron beam, molecular beam epitaxy, magnetron sputtering, PECVD, etc.
  • a photonic crystal substructure 1 is formed when the repeating layer N is formed, and a photonic crystal substructure 2 to a photonic crystal substructure M is formed by a formation method similar to that of the photonic crystal substructure 1, thereby forming a photonic crystal layer 011.
  • Step 702 Form a plurality of luminescent medium layers corresponding to different color pixels on the photonic crystal layer, and the illuminating medium layer can emit light of a corresponding color under the excitation of the light of the backlight.
  • the light of the corresponding color can be arbitrarily selected, and in one example, any one of three colors of red, green and blue, the photonic crystal layer 011 has a reflectivity of more than 80% to the light from the luminescent medium layer 012. .
  • the luminescent medium layer 012 can be formed using a photoluminescent material.
  • the photoluminescent material may be a fluorescent material or a phosphorescent material.
  • the light emitted by the luminescent medium layer 012 may be any one of red, green and blue light, wherein the blue light may be Emitted by a phosphorescent system material, the phosphorescent system material may include: 80% CBP and 20% FIrpic; or, blue light may be emitted from a fluorescent system material including: 95% DSA and 5% DPVBi.
  • the green light may be emitted by a phosphorescent system material, which may include: 95% CBP and 5% Ir(ppy) 3 ; or, green light may also be emitted from a fluorescent system material, the fluorescent system material comprising: 99% Alq 3 and 1% C-545T, C-545T is a kind of soy-flavor compound.
  • the red light may be emitted by a phosphorescent system material, which may include: 97% CBP and 3% Q 3 Ir; or, red light may also be emitted from a fluorescent system material, the fluorescent system material includes: 98% the Alq 3 and 2% of DCJTB.
  • forming a plurality of luminescent medium layers corresponding to different color pixels on the photonic crystal layer includes: forming a plurality of phosphor layers, phosphor layers or quantum dots corresponding to different color pixels on the photonic crystal layer Layers are not detailed here.
  • the absorption spectrum of the photo luminescent material used by the luminescent medium layer 012 and the spectrum of the illuminating illuminating medium 012 have a larger spectrum. Overlapping area.
  • the luminescent medium layer 012 The thickness D satisfies the following formula: Where ⁇ is the cumulative phase change of the light emitted by the luminescent medium layer 012 when reflected on each reflective interface, that is, the sum of the phase transitions of the light emitted by the luminescent medium layer 012 at each reflective interface, and n is the luminescent medium layer 012.
  • n is the refractive index corresponding to the main peak wavelength of the red light.
  • the reflective interface includes an interface between the photonic crystal layer 011 and the luminescent medium layer 012 and an interface between the transflective layer 013 and the luminescent medium layer 012.
  • the forming step of the luminescent medium layer 012 may include: depositing a fluorescent material having a thickness D on the photonic crystal layer 011 by thermal evaporation, electron beam, molecular beam epitaxy, magnetron sputtering, PECVD, or the like. Or the phosphor material forms the luminescent medium layer 012.
  • Step 703 forming a transflective layer on the luminescent medium layer.
  • the transflective layer 013 may be a transflective layer, and the forming material may be Ag or Al.
  • the transflective layer 013 may have a thickness of 10 to 15 nm.
  • the forming step of the transflective layer 013 may include depositing an Ag layer having a thickness of 10 to 15 nm on the luminescent medium layer 012 by vacuum thermal evaporation to form a transflective layer 013.
  • Step 704 forming a cover layer on the transflective layer.
  • the cover layer 014 is generally formed of a material having a high refractive index and a low extinction coefficient, such as NPB, and the thickness of the cover layer 014 is less than 100 nm in consideration of color differences at different angles.
  • the thickness of the cover layer 014 is 80 nm.
  • the method of forming the cap layer 014 may include depositing an NPB layer having a thickness of 80 nm on the transflective layer 013 by vacuum thermal evaporation to form a cap layer 014.
  • the cover layer 014 can prevent metal oxidation of the transflective layer 013 and improve the light-emitting property of the color filter substrate 01.
  • the method for manufacturing a color filter substrate provided by the embodiment of the present invention can be applied to the production of a display device of the ADS type, the IPS type, and the twisted nematic (Twist Nematic, TN) type.
  • the ADS technology forms a multi-dimensional electric field by a parallel electric field generated by the edge of the pixel electrode in the same plane and a longitudinal electric field generated between the pixel electrode layer and the common electrode layer, so that all the liquid crystal molecules in the liquid crystal cell can be rotated between the pixel electrodes and directly above the electrode. Conversion, thereby improving the efficiency of the planar orientation system liquid crystal and increasing the penetration Light efficiency.
  • FIG. 12 is a schematic structural diagram of a display device 02 according to another embodiment of the present invention.
  • the display device 02 includes: an array substrate 021 and a color filter substrate 01 disposed on a box, and the color filter substrate 01 can be a figure. 1 or the color film substrate shown in any of FIG.
  • the display device 02 may further include: a liquid crystal layer 022 filled between the array substrate 021 and the color filter substrate 01, the liquid crystal layer 022 includes a plurality of liquid crystal molecules 0221 and a spacer 0022, and the spacers 0222 respectively
  • the array substrate 021 and the color filter substrate 01 are contacted to support the array substrate 021 and the color filter substrate 01 such that a space is formed between the array substrate 021 and the color filter substrate 01, and the liquid crystal molecules 0221 are located in the space.
  • FIG. 13 is a schematic structural diagram of a display device 02 according to another embodiment of the present invention.
  • the display device 02 includes: an array substrate 021 and a color filter substrate 01 disposed on a box, and the color filter substrate 01 can be a figure. 1 or the color film substrate shown in any of FIG.
  • the display device 02 may further include: a liquid crystal layer 022 filled between the array substrate 021 and the color filter substrate 01, the liquid crystal layer 022 includes a plurality of liquid crystal molecules 0221 and a spacer 0222, and the spacer 0222
  • the array substrate 021 and the color filter substrate 01 are respectively contacted to support the array substrate 021 and the color filter substrate 01 such that a space is formed between the array substrate 021 and the color filter substrate 01, and the liquid crystal molecules 0221 are located in the space.
  • the liquid crystal molecules 0221 may be positive liquid crystal molecules or negative liquid crystal molecules, and the array substrate 021 is provided with an Indium Tin Oxides (ITO) electrode (not shown in FIG. 13).
  • ITO Indium Tin Oxides
  • the long axis or the short axis of the liquid crystal molecules 0221 are regularly arranged along the direction of the electric field, exhibiting anisotropy and affecting the direction of the incident light.
  • the color filter substrate 01 includes a base substrate 010, and a photonic crystal layer 011, a luminescent medium layer 012, and a transflective layer 013 sequentially formed thereon, and the photonic crystal layer 011 is used to emit the luminescent medium layer 012.
  • the light is reflected to the transflective layer 013 such that the light emitted by the luminescent medium layer 012 oscillates and interferes between the photonic crystal layer 011 and the transflective layer 013, and is finally emitted from the transflective layer 013.
  • the display device 02 further includes a backlight 023.
  • the backlight 023 is disposed on the backlight side of the array substrate 021; the light emitted by the backlight 023 is blue-violet light having a wavelength of less than 430 nm, and the photonic crystal layer 11 reflects light having a wavelength greater than 430 nm.
  • the transmittance of the photonic crystal layer 11 to blue-violet light having a wavelength of less than 430 nm is greater than 60%, and the reflectance of light emitted from the luminescent medium layer 12 is greater than 80%.
  • the emitted light may be red, Any of the three colors of green and blue.
  • the backlight side of the array substrate 021 is provided with a polarizer 024, and the side of the color filter substrate 01 facing the array substrate 021 is provided with an analyzer 025, and the backlight 023 is located at a side of the polarizer 024 away from the array substrate 021. .
  • the polarization direction of the polarizer 024 is perpendicular to the polarization direction of the analyzer 025.
  • the device structure provided by the present invention has the following features: the existing LCD display device structure is the basic frame, so the portability is high; in addition, the short-wave LED is directly used as the backlight, thereby reducing the backlight. The energy loss at the source end; secondly, a special color developing layer having a one-dimensional photonic crystal microcavity structure is introduced into a conventional CF layer. Therefore, the photonic crystal layer is specially designed to be highly transparent to the wavelength band of the backlight. Shot, but has high reflectivity for other visible light bands.
  • the blue light emitted by the analyzer is transmitted into the color developing layer through the one-dimensional photonic crystal layer, and the luminescent material in the color developing layer is excited to emit red, blue and green light respectively by photoluminescence, and the three color lights are respectively in the photonic crystal.
  • the layer oscillates between the layer and the transflective layer to form an interference and eventually exits from the transflective layer. Utilizing the modulation of the microcavity, the final exiting light is half-width wide and narrow, and finally has a saturation comparable to AMOLED.
  • the display device provided by the embodiment of the invention uses a blue-violet LED as a backlight to excite the luminescent medium layer to perform color development, which is more efficient and energy-saving than the conventional method of using a white LED to develop color through a color filter.
  • the light emitted by the backlight is white light formed by the blue electroluminescent chip and the yellow phosphor, and there is energy loss in the process of forming white light, and the white light sequentially passes through the polarizer, the array substrate, the liquid crystal layer, and The analyzer is finally emitted from the color filter substrate.
  • the white light passes through the polarizer, the array substrate, the liquid crystal layer, the analyzer, and the color filter substrate, energy loss is also generated, resulting in lower energy of the emitted light.
  • the display device adopts blue-violet light with a wavelength of less than 430 nm as a backlight.
  • the blue-violet light can be emitted by a blue-violet LED backlight without forming white light, avoiding energy loss when forming white light, and blue-violet light emitted by the backlight.
  • the light After passing through the polarizer, the array substrate, the liquid crystal layer, and the analyzer, after reaching the color filter substrate, the light directly illuminates the luminescent medium layer in the color filter substrate to perform color development. Compared with the conventional LCD display, there is no color filter layer. Energy loss, which achieves energy-efficient effects.

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Abstract

一种彩膜基板及其制造方法、显示装置，该彩膜基板（01）包括：衬底基板（010）；位于所述衬底基板（010）上的光子晶体层（011）；位于所述光子晶体层（011）上与不同颜色像素对应的多个发光介质层（012），所述发光介质层（012）能够在背光源（023）的光线激发下发出对应颜色的光；位于所述发光介质层（012）上的半透半反层（013）；其中，所述光子晶体层（011）用于将所述发光介质层（012）发出的光多次反射至所述半透半反层（013），使得光在所述光子晶体层（011）与所述半透半反层（013）之间震荡并干涉，最终从所述半透半反层（013）射出。

Description

彩膜基板及其制造方法、显示装置
本申请要求于2015年05月28日递交的、申请号为201510284865.X、发明名称为“彩膜基板及其制造方法、显示装置”的中国专利申请的优先权，其全部内容通过引用并入本申请中。
技术领域
本发明涉及液晶显示技术领域，尤其涉及彩膜基板及其制造方法、显示装置。
背景技术
随着液晶显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)广泛应用于显示领域。
LCD通常包括对盒而置的阵列基板和彩膜基板，以及填充在阵列基板和彩膜基板之间的液晶层。LCD可对来自背光源的光线进行调节实现图像显示。通常，背光源为发白光的LED背光源，该白光是由蓝色电致发光芯片配合黄色荧光粉形成。
然而，现有彩膜基板中的彩膜的滤色能力较低，采用所述白光经彩膜滤色形成彩色的光的光谱的半高宽较大，LCD的饱和度较低，且白光LED背光源的能耗较高。
发明内容
为了解决现有技术中的缺陷的至少一部分，例如彩膜的滤色能力较低，采用白光经彩膜滤色形成彩色的光的光谱的半高宽较大，LCD的饱和度较低，且白光LED背光源的能耗较高等问题，本发明实施例提供一种彩膜基板及其制造方法、显示装置。
本发明提供的至少一个技术方案带来以下有益效果中的至少一部分：
根据本发明的一个方面，提供了一种彩膜基板，包括：
衬底基板；
位于所述衬底基板上的光子晶体层；
位于所述光子晶体层上与不同颜色像素对应的多个发光介质层，所述发光介质层能够在背光源的光线激发下发出对应颜色的光；
位于所述发光介质层上的半透半反层；
其中，所述光子晶体层用于将所述发光介质层发出的光反射至所述半透半反层，使得光在所述光子晶体层与所述半透半反层之间震荡并干涉，最终从所述半透半反层射出。
在一个示例中，所述光子晶体层满足如下条件：对来自背光源的光的透射率大于60％，对来自发光介质层的光的反射率大于80％。
在一个示例中，所述光子晶体层为一维光子晶体层；所述半透半反层为半透半反金属层；所述发光介质层为光致发光层。
在一个示例中，所述光子晶体层采用至少两种折射率不同的透光材料层周期性层叠形成。
在一个示例中，所述光子晶体层包括与所述每个发光介质层对应的多个光子晶体亚结构；
其中，每个所述光子晶体亚结构采用至少两种折射率不同的透光材料层周期性层叠形成，每个所述光子晶体亚结构中的透光材料层为至少五层；
任意两个光子晶体亚结构的光学禁带的禁带范围不同且存在交叠区域，任一所述光子晶体亚结构对光的反射率与所述透光材料层的层数正相关。
在一个示例中，各所述光子晶体亚结构中采用的透光材料的种类相同，每个所述光子晶体亚结构中的透光材料层最多为十层；
所述半透半反层为Ag或Al层，其厚度范围为10-15nm。
在一个示例中，所述发光介质层的厚度D满足如下公式：
Figure PCTCN2016075968-appb-000001
其中，φ为所述发光介质层发出的光在反射界面上反射时的累计相位变化，n为所述发光介质层发出的光的主峰波长对应的折射率，所述反射界面包括：所述光子晶体层与所述发光介质层之间的界面和所述半透半反层与所述发光介质层之间的界面。
在一个示例中，彩膜基板还包括位于所述半透半反层上的覆盖层。
在一个示例中，所述多个发光介质层包括与不同颜色像素对应的发红色光的发光介质层、发绿色光的发光介质层和发蓝色光的发光介质层，其中每个所述发光介质层由荧光层、磷光层或量子点层构成。
根据本发明的另一方面，提供了一种显示装置，所述显示装置包括：对盒而置的阵列基板和彩膜基板，所述彩膜基板为上述的彩膜基板。
在一个示例中，所述显示装置还包括：背光源，
所述背光源设置在所述阵列基板的背光侧；
所述背光源发出的光为波长小于430纳米的蓝紫色光，所述光子晶体层为能够反射波长大于430纳米光的光子晶体层。
根据本发明的还一方面，提供了一种上述的彩膜基板的制造方法，包括：
在所述衬底基板上形成光子晶体层；
在所述光子晶体层上形成与不同颜色像素对应的多个发光介质层，每个所述发光介质层能够在背光源的光线激发下发出相应颜色的光；
在所述发光介质层上形成半透半反层；
其中，所述光子晶体层用于反射所述发光介质层发出的光线至所述半透半反层，使得光线在所述光子晶体层与所述半透半反层之间震荡并干涉，最终从所述半透半反层射出。
在一个示例中，在所述发光介质层上形成半透半反层包括：过真空热蒸镀的方式在所述发光介质层上形成厚度为10～15nm的银或铝层，使得银或铝层的反射率为60％～70％的范围内。
在一个示例中，在所述光子晶体层上形成与不同颜色像素对应的多个发光介质层包括：
在所述光子晶体层上形成与不同颜色像素对应的多个荧光层、磷光层或量子点层。
在一个示例中，所述制造方法还包括在所述半透半反层上形成覆盖层的步骤。
通过在衬底基板上依次形成光子晶体层、发光介质层和半透半反层，发光介质层能够在背光源的光线激发下发出对应颜色的光，光子晶体层用于将发光介质层发出的光多次反射至半透半反层，使得该光在光子晶体层与半透半反层之间震荡并干涉，最终从半透半反层射出。本发明通过微腔的调制，解决了现有技术中白光经彩膜滤色形成彩色的光的光谱的半高宽较大，LCD的饱和度较低，且白光LED背光源的能耗较高等问题中的至少一部分，部分地达到了降低彩色的光的光谱的半高宽，提高LCD的饱和度和节能的效果。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明一个实施例提供的彩膜基板的结构示意图；
图2是本发明另一实施例提供的彩膜基板的结构示意图；
图3是图2所示的光子晶体层的结构示意图；
图4是图3所示的中心波长不同的两种光子晶体亚结构的光学禁带叠加图；
图5是图3所示的光子晶体亚结构中重复层的个数与光子晶体亚结构对发光介质层发出的光的反射率的关系图；
图6是本发明一个实施例提供的彩膜基板的制造方法流程图；
图7是本发明另一实施例提供的彩膜基板的制造方法流程图；
图8是本发明一个实施例提供的在衬底基板上形成光子晶体层后的结构示意图；
图9是在图8所示的光子晶体层上形成发光介质层后的结构示意图；
图10是在图9所示的发光介质层上形成半透半反层后的结构示意图；
图11是在图10所示的半透半反层上形成覆盖层后的结构示意图；
图12是本发明的一个实施例提供的显示装置的结构示意图；
图13是本发明的另一实施例提供的显示装置的结构示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
参见图1，本发明一个实施例提供的彩膜基板01包括：衬底基板010，衬底基板10可以为透明基板，其具体可以是采用具有一定坚固性的导光的为非金属材料的玻璃、石英、透明树脂等制成的基板。
所述彩膜基板还包括位于衬底基板010上的光子晶体层011；位于光子晶体层011上与不同颜色像素对应的多个发光介质层012，该发光介质层012能够在背光源的光线激发下发出对应颜色的光；位于发光介质层012上的半透半反层013。光子晶体层011用于将发光介质层012发出的光(一次或多次)反射至所述半透半反层013，使得光在光子晶体层011与半透半反层013之间震荡并干涉，最终从半透半反层013射出。
具体地，光子晶体层011和半透半反层013之间可以形成微腔，发光介质层012等同于填充在该微腔中的介质。
综上所述，本发明实施例提供的彩膜基板，通过在衬底基板上依次形成光子晶体层、发光介质层和半透半反层，发光介质层能够在背光源的光线的激发下发出对应颜色的光，所述光子晶体层用于将发光介质层发出的多次反射至半透半反层，使得光在光子晶体层与半透半反层之间震荡并干涉，最终从半透半反层射出。
本发明通过微腔的调制，解决了现有技术中白光经彩膜滤色形成彩色的光的光谱的半高宽较大，LCD的饱和度较低，且白光LED背光源的能耗较高的问题中的至少一部分，部分地达到了降低彩色的光的光谱的半高宽，提高LCD的饱和度和节能的效果。
请参考图2，其示出根据本发明实施例提供的另一种彩膜基板01的结构示意图。该彩膜基板01包括：衬底基板010，衬底基板010可以为透明基板，其具体可以是采用玻璃、石英、透明树脂等具有一定坚固性的导光的非金属材料制成的基板。
该彩膜基板01还包括位于衬底基板010上的光子晶体层011；位于光子晶体层011上与不同颜色像素对应的多个发光介质层012，位于发光介质层012上的半透半反层013。该发光介质层012能够在背光源的光线激发下发出对应颜色的光，该对应颜色的光可以包括各种期望的颜色，例如是红、绿、蓝三种颜色的光中的任意一种。光子晶体层011用于将发光介质层12发出的光多次反射至半透半反层013，使得光在光子晶体层011与半透半反层013之间震荡并干涉，并最终从半透半反层013射出。
在一个示例中，光子晶体层011和半透半反层013之间可以形成微腔，发光介质层012等同于填充在该微腔中的介质。
进一步地，为了防止半透半反层013的金属氧化以及提高彩膜基板01的出光性，半透半反层013上还形成有覆盖层(Capping Layer，CPL)014。覆盖层014一般采用高折射率、低消光系数的材料形成，比如，NPB，而考虑到不同角度的色彩差异，覆盖层014的厚度小于100nm，示例地，覆盖层014的厚度为80nm，形成覆盖层014的步骤可以包括：采用真空热蒸镀的方式，在半透半反层013上沉积厚度为80nm的NPB层，以形成覆盖层014。
具体地，光子晶体层011具有一定的光学禁带，波长处于该光学禁带的禁带范围内的光无法从光子晶体层011通过，表现出高的反射性，而波长处于该光学禁带的禁带范围外的光能够从光子晶体层011通过，表现出高的透射性。在本发明实施例中，光子晶体层011满足如下条件：对来自背光源的光的透射率大于60％，对来自发光介质层的光的反射率大于80％。因此，光子晶体层011对背光源的光具有高透射性，对发光介质层012发出的光具有高反射性，使得光子晶体层011能够将发光介质层012发出的光一次或多次反射至半透半反层013。
可选地，光子晶体层011可以为一维光子晶体层，可以采用至少两种折射率不同的透光材料层在衬底基板010上周期性层叠形成光子晶体层011。
请参考图3，其是图2所示的光子晶体层011的结构示意图。该光子晶体层011包括：与每个发光介质层012对应的多个光子晶体亚结构1至M，M≥2，且M为整数。每个光子晶体亚结构1包括：采用两种折射率不同的透光材料层周期性层叠形成的多个重复层，且每个光子晶体亚结构中的透光材料层(重复层)的重复周期为N，N≥5，且N为正整数。示例地，以光子晶体亚结构1为例，如图3所示，光子晶体亚结构1包括：重复层1至重复层N，共N个重复层，每个重复层包括：层A和层B，其中，层A可以采用材料a形成，层B可以采用材料b形成。各光子晶体亚结构1中采用的透光材料的种类相同，任意两个光子晶体亚结构的光学禁带的禁带范围不同且存在交叠区域，任一光子晶体亚结构对发光介质层12发出的光的反射率与重复层的个数N呈正相关。可以通过控制每个光子晶体亚结构中的层A、层B的厚度以及重复层的个数，也即，控制光子晶体亚结构中的层A、层B的厚度以及N的数值来使得不同的光子晶体亚结构1具有不同的禁带范围。
在一个示例，可以采用热蒸发、电子束、分子束外延、磁控溅射、等离子体增强化学气相沉积法(Plasma Enhanced Chemical Vapor Deposition，PECVD)等方法，在衬底基板010上形成光子晶体层011。具体地，采用热蒸发、电子束、分子束外延、磁控溅射、PECVD等方法，依次交替在衬底基板010上沉积具有一定厚度的两种折射率不同的透光材料形成光子晶体层011。示例地，参见图3，以光子晶体亚结构1为例进行说明，可以采用热蒸发、电子束、分子束外延、磁控溅射、PECVD等方法在衬底基板010上沉积一层具有一定厚度的材料a，形成层A，再采用热蒸发、电子 束、分子束外延、磁控溅射、PECVD等方法在层A上沉积一层具有一定厚度的材料b，形成层B，此时，形成重复层1；之后再采用热蒸发、电子束、分子束外延、磁控溅射、PECVD等方法，在重复层1的层B上沉积一层具有一定厚度的材料a，形成层A，采用热蒸发、电子束、分子束外延、磁控溅射、PECVD等方法在层A上沉积一层具有一定厚度的材料b，形成层B，此时，形成重复层2，依次类推，直至形成重复层N，形成重复层N时即可形成光子晶体亚结构1，采用与光子晶体亚结构1类似的形成方法，形成光子晶体亚结构2至光子晶体亚结构M，进而形成光子晶体层011。
需要说明的是，在本发明的一个实施例中，材料a可以为SiO2，材料b可以为ZnO或者，在本发明的另一可替代的实施例中，材料a可以为Ta2O5，其折射率为na＝2.096，材料b可以为MgF2，其折射率为nb＝1.38。
还需要说明的是，由于可用的透光材料的折射率最高不超过2.6，最低不低于1.3，导致光子晶体层011的光学禁带无法充分反射发光介质层012发出的光，因此，在本发明实施例中，光子晶体层011采用M个光子晶体亚结构组成，任意两个光子晶体亚结构的光学禁带的禁带范围不同且存在交叠区域，使得本发明实施例中的光子晶体层011的光学禁带的禁带范围能够调节，以使得光子晶体层011具有足够大的禁带范围，将发光介质层12发出的光完全反射。
示例地，如图4所示，其示出的是中心波长为650nm(纳米)和中心波长为550nm的两种光子晶体亚结构的光学禁带叠加图，参见图4，其中，λ0表示的是光子晶体亚结构的光学禁带的中心波长，可以看出，中心波长为650nm的光子晶体亚结构的光学禁带的禁带范围为560nm～780nm，中心波长为550nm的光子晶体亚结构的光学禁带的禁带范围为470nm～660nm，则由中心波长为650nm的光子晶体亚结构和中心波长为550nm的光子晶体亚结构形成的光子晶体层的禁带范围为470nm～780nm，相比于仅由一种光子晶体亚结构形成的光子晶体层，两种中心波长不同的光子晶体亚结构形成的光子晶体层的禁带范围更大。其中，中心波长指的是光学禁带的中心波长，假设某一光子晶体亚结构的光学禁带的禁带范围为：λmin～λmax，则该光子晶体亚结构的光学禁带的中心波长为：
Figure PCTCN2016075968-appb-000002
该光子晶体亚结构的光学禁带的宽度为：
Figure PCTCN2016075968-appb-000003
其中，在本发明实施例中，可以通过控制每个光子晶体亚结构中的层A、层B的厚度以及重复层的个数，来使得不同的光子晶体亚结构具有不同的禁带范围。假设层A的厚度为dA，层B的厚度为dB，则dA和dB满足公式
Figure PCTCN2016075968-appb-000004
其中，
Figure PCTCN2016075968-appb-000005
N＝1，2，3...，N表示光子晶体亚结构中，层A和层B的重复次数，λ0表示的是光子晶体亚结构的光学禁带的中心波长。示例地，在本发明实施例中，当材料a为Ta2O5，材料b为MgF2时，对于每一个光子晶体亚结构，dA+dB＝100～200nm，dA：dB＝0.25～4。其中，由于光子晶体层011的厚度为光子晶体层011的光学禁带的中心波长的1/4时，光子晶体层011的反射率最高，因此，为了保证光子晶体层011的反射率，光子晶体层011的厚度为光子晶体层011的光学禁带的中心波长的1/4。
在本发明实施例中，光子晶体亚结构对发光介质层012发出的光的反射率与光子晶体亚结构中重复层的个数N呈正相关，理论上来讲，N的取值越大，光子晶体亚结构对发光介质层012发出的光的反射率越高，但是，光子晶体亚结构在反射发光介质层012发出的光时，会吸收掉一部分光，因此，当N的取值太大时，会降低从半透半反层013射出的光的出光效率。请参考图5，其示出的是光子晶体亚结构中重复层的个数N与光子晶体亚结构对发光介质层012发出的彩色的光的反射率的关系图，参见图5，当N＝5时，光子晶体亚结构对发光介质层012发出的彩色的光的反射率接近1，因此，在本发明实施例中，N≥5，考虑到从半透半反层013射出的光的出光效率，在本发明实施例中，优选地，10≥N≥6。
可选地，发光介质层012采用光致发光材料形成。光致发光材料可以为荧光材料或磷光材料，在光线的激发下，发光介质层012发出的光可以为红、绿、蓝三种颜色的光中的任意一种，其中，蓝色的光可以由磷光体系材料发出，该磷光体系材料可以包括：80％的CBP和20％的FIrpic；或者，蓝色的光可以由荧光体系材料发出，该荧光体系材料包括：95％的DSA和5％的DPVBi。绿色的光可以由磷光体系材料发出，该磷光体系材料可以包括：95％的CBP和5％的Ir(ppy)3；或者，绿色的光还可以由荧光体系材料发出，该荧光体系材料包括：99％的Alq3和1％的C-545T，C-545T是一种豆香素类化合物。红色的光可以由磷光体系材料发出，该磷光体系材料可以包括：97％的CBP和3％的Q3Ir；或者，红色的光还可以由荧光体系材料发出，该荧光体系材料包括：98％的Alq3和2％的DCJTB。也就是说，所述多个发光介质层包括与不同颜色像素对应的发红色光的发光介质层、发绿色光的发光介质层和发蓝色光的发光介质层，其中每个所述发光介质层由荧光层、磷光层或量子点层构成。
需要说明的是，在本发明实施例中，为了对发光介质层012的高效激发，发光介质层012采用的光致发光材料的吸收光谱和激发发光介质层012发光的光线的光谱具有较大的重叠区域。为了保证从半透半反层013射出的光线的强度，当光在光子晶体层011与半透半反层013之间震荡并干涉时，若采用第零周期干涉模式，则发光介质层012的厚度D满足以下公式：
Figure PCTCN2016075968-appb-000006
其中φ为发光介质层发出的光在各个反射界面上反射时的累计相位变化，也即是该光在各个反射界面上的相变的总和，n为发 光介质层012发出的光的主峰波长对应的折射率，示例地，若发光介质层012发出的光为红色光，则n为该红色光的主峰波长对应的折射率。其中，反射界面包括：光子晶体层011与发光介质层012之间的界面和半透半反层013与发光介质层012之间的界面。若发光介质层012和半透半反层013的折射率、消光系数分别为(n，k)和(n1，k1)，则：
Figure PCTCN2016075968-appb-000007
需要说明的是，发光介质层012的形成步骤可以包括：采用热蒸发、电子束、分子束外延、磁控溅射、PECVD等方法，在光子晶体层011上沉积一层厚度为D的荧光材料或者磷光材料形成发光介质层012。
可选地，半透半反层013为半透半反金属层，其形成材料可以为Ag或Al，为了使得半透半反层013的反射率保持在50％～70％之间，在本发明实施例中，半透半反层013的厚度范围可以为10～15nm，示例地，半透半反层013的形成步骤可以包括：采用真空热蒸镀的方式，在发光介质层012上沉积厚度为10～15nm的Ag层，形成半透半反层013。
以下是本发明的上述的彩膜基板的制造方法，相同或类似之处不再累述。
请参考图6，其是本发明实施例提供的彩膜基板的制造方法的流程图，其中，该彩膜基板包括：衬底基板，该衬底基板可以为透明基板，其具体可以是采用玻璃、石英、透明树脂等具有一定坚固性的导光的非金属材料制成的基板。参见图6，该方法流程具体包括：
步骤601、在衬底基板上形成光子晶体层。
步骤602、在光子晶体层上形成与不同颜色像素对应的多个发光介质层，每个发光介质层能够在背光源的光线激发下发出对应颜色的光。
步骤603、在发光介质层上形成半透半反层。
其中，光子晶体层用于反射发光介质层发出的光线至所述半透半反层，使得该光线在光子晶体层与半透半反层之间震荡并干涉，最终从半透半反层射出。
请参考图7，其是本发明另一实施例的彩膜基板的制造方法的流程图，其中，该彩膜基板包括：衬底基板，衬底基板可以为透明基板，其具体可以是采用玻璃、石英、透明树脂等具有一定坚固性的导光的非金属材料制成的基板。参见图7，该方法流程具体包括：
步骤701、在衬底基板上形成光子晶体层。
如图8所示，其是在衬底基板010上形成光子晶体层011后的结构示意图，在本发明实施例中，在衬底基板010上形成光子晶体层011可以包括：采用两种折射率不同的透光材料，在衬底基板010上周期性层叠形成M个光子晶体亚结构，每个光子晶体亚结构采用两种折射率不同的透光材料层周期性层叠形成，每个光子晶体亚结构包括有多个重复层，且每个光子晶体亚结构中的重复层的重复周期为N，N≥5，且N为正整数，也即，每个光子晶体亚结构包括N个重复层，各光子晶体亚结构中采 用的透光材料的种类相同，且任意两个光子晶体亚结构的光学禁带不同且存在交叠区域，任一光子晶体亚结构对发光介质层012发出的光的反射率与重复层的个数N呈正相关。光子晶体层010可以为一维光子晶体层，该光子晶体层010对来自背光源的光线的透射率大于60％。
其中，在本发明实施例中，N≥5，且N为整数，优选地，10≥N≥6。参见图3所示的光子晶体层011的结构示意图，在衬底基板010上形成光子晶体层011具体可以包括：采用热蒸发、电子束、分子束外延、磁控溅射、PECVD等方法，依次交替在衬底基板010上沉积具有一定厚度的两种折射率不同的透光材料形成光子晶体层011。示例地，参见图3，以光子晶体亚结构011为例进行说明，可以采用热蒸发、电子束、分子束外延、磁控溅射、PECVD等方法在衬底基板010上沉积一层具有一定厚度的材料a，形成层A，再采用热蒸发、电子束、分子束外延、磁控溅射、PECVD等方法在层A上沉积一层具有一定厚度的材料b，形成层B，此时，形成重复层1；之后再采用热蒸发、电子束、分子束外延、磁控溅射、PECVD等方法，在重复层1的层B上沉积一层具有一定厚度的材料a，形成层A，再采用热蒸发、电子束、分子束外延、磁控溅射、PECVD等方法在层A上沉积一层具有一定厚度的材料b，形成层B，此时，形成重复层2，依次类推，直至形成重复层N，形成重复层N时即可形成光子晶体亚结构1，采用与光子晶体亚结构1类似的形成方法，形成光子晶体亚结构2至光子晶体亚结构M，进而形成光子晶体层011。其中，材料a可以为Ta2O5，其折射率为na＝2.096，材料b可以为MgF2，其折射率为nb＝1.38。
步骤702、在光子晶体层上形成与不同颜色像素对应的多个发光介质层，该发光介质层能够在背光源的光线激发下发出相应颜色的光。
其中，该相应颜色的光可以任意选择，在一个示例中为红、绿、蓝三种颜色的光中的任意一种，光子晶体层011对来自发光介质层012的光的反射率大于80％。
如图9所示，其是在光子晶体层011上形成发光介质层012后的结构示意图，发光介质层012可以采用光致发光材料形成。光致发光材料可以为荧光材料或磷光材料，在光线的激发下，发光介质层012发出的光可以为红、绿、蓝三种颜色的光中的任意一种，其中，蓝色的光可以由磷光体系材料发出，该磷光体系材料可以包括：80％的CBP和20％的FIrpic；或者，蓝色的光可以由荧光体系材料发出，该荧光体系材料包括：95％的DSA和5％的DPVBi。绿色的光可以由磷光体系材料发出，该磷光体系材料可以包括：95％的CBP和5％的Ir(ppy)3；或者，绿色的光还可以由荧光体系材料发出，该荧光体系材料包括：99％的Alq3和1％的C-545T，C-545T是一种的豆香素类化合物。红色的光可以由磷光体系材料发出，该磷光体系材料可以包括：97％的CBP和3％的Q3Ir；或者，红色的光还可以由荧光体系材料发出，该荧光体系材料包括：98％的Alq3和2％的DCJTB。在本发明中，在所述光子晶体层上形成与不同颜色像素对应的多个发光介质层包括：在所述光子晶体层上形成与不同颜色像素对应的多个荧光层、磷光层或量子点层，在此不再一一详述。
需要说明的是，在本发明的实施例中，为了对发光介质层012的高效激发，发光介质层012采用的光致发光材料的吸收光谱和激发发光介质层012发光的光线的光谱具有较大的重叠区域。为了保证从半透半反层013射出的光线的强度，当光在光子晶体层011与半透半反层013之间震荡并干涉时，若采用第零周期干涉模式，则发光介质层012的厚度D满足以下公式：
Figure PCTCN2016075968-appb-000008
其中φ为发光介质层012发出的光在各个反射界面上反射时的累计相位变化，也即是发光介质层012发出的光在各个反射界面上的相变的总和，n为发光介质层012发出的光的主峰波长对应的折射率，示例地，若发光介质层012发出的光为红色光，则n为该红色光的主峰波长对应的折射率。其中，反射界面包括：光子晶体层011与发光介质层012之间的界面和半透半反层013与发光介质层012之间的界面。若发光介质层012和半透半反层013的折射率、消光系数分别为(n，k)和(n1，k1)，则：
Figure PCTCN2016075968-appb-000009
需要说明的是，发光介质层012的形成步骤可以包括：采用热蒸发、电子束、分子束外延、磁控溅射、PECVD等方法，在光子晶体层011上沉积一层厚度为D的荧光材料或者磷光材料形成发光介质层012。
步骤703、在发光介质层上形成半透半反层。
如图10所示，其是在发光介质层012上形成半透半反层013后的结构示意图，半透半反层013可以为半透半反金属层，其形成材料可以为Ag或Al，为了使得半透半反层013的反射率保持在50％～70％之间，在本发明实施例中，半透半反层013的厚度可以为10～15nm。示例地，半透半反层013的形成步骤可以包括：采用真空热蒸镀的方式，在发光介质层012上沉积厚度为10～15nm的Ag层，以形成半透半反层013。
步骤704、在半透半反层上形成覆盖层。
如图11所示，其是在半透半反层013上形成覆盖层014后的结构示意图。其中，覆盖层014一般采用高折射率、低消光系数的材料形成，比如，NPB，而考虑到不同角度的色彩差异，覆盖层014的厚度小于100nm，示例地，覆盖层014的厚度为80nm，覆盖层014的形成方法可以包括：采用真空热蒸镀的方式，在半透半反层013上沉积厚度为80nm的NPB层，以形成覆盖层014。
其中，覆盖层014可以防止半透半反层013的金属氧化以及提高彩膜基板01的出光性。
还需要说明的是，本发明实施例提供的彩膜基板的制造方法可以适用于ADS型、IPS型、扭曲向列(英文：Twist Nematic，简称：TN)型等类型的显示装置的生产。ADS技术通过同一平面内像素电极边缘所产生的平行电场以及像素电极层与公共电极层间产生的纵向电场形成多维电场，使液晶盒内像素电极间、电极正上方所有取向液晶分子都能够产生旋转转换，从而提高了平面取向系液晶工作效率并增大了透 光效率。
请参考图12，其是本发明另一实施例提供的显示装置02的结构示意图，该显示装置02包括：对盒而置的阵列基板021和彩膜基板01，该彩膜基板01可以为图1或图2任一所示的彩膜基板。
参见图12，显示装置02还可以包括：填充在阵列基板021和彩膜基板01之间的液晶层022，该液晶层022包括多个液晶分子0221和隔垫物0222，该隔垫物0222分别与阵列基板021和彩膜基板01相接触，用于支撑阵列基板021和彩膜基板01，使得阵列基板021和彩膜基板01之间形成空间，液晶分子0221位于该空间内。
请参考图13，其是本发明另一实施例提供的显示装置02的结构示意图，该显示装置02包括：对盒而置的阵列基板021和彩膜基板01，该彩膜基板01可以为图1或图2任一所示的彩膜基板。
参见图13，该显示装置02还可以包括：填充在阵列基板021和彩膜基板01之间的液晶层022，该液晶层022包括多个液晶分子0221和隔垫物0222，该隔垫物0222分别与阵列基板021和彩膜基板01相接触，用于支撑阵列基板021和彩膜基板01，使得阵列基板021和彩膜基板01之间形成空间，液晶分子0221位于该空间内。液晶分子0221可以为正向液晶分子或者负向液晶分子，阵列基板021设置有氧化烟锡(Indium Tin Oxides，ITO)电极(图13中未示出)，当向该ITO电极施加电压时，在电场的作用下，液晶分子0221的长轴或短轴沿着电场方向规则排列，显示出各向异性，影响入射光的偏正方向。
可选地，彩膜基板01包括衬底基板010、以及在其上依次形成的光子晶体层011、发光介质层012和半透半反层013，光子晶体层011用于将发光介质层012发出的光反射至半透半反层013，使得发光介质层012发出的光在光子晶体层011与半透半反层013之间震荡并干涉，最终从半透半反层013射出。
该显示装置02，还包括：背光源023。背光源023设置在阵列基板021的背光侧；背光源023发出的光为波长小于430纳米的蓝紫色光，光子晶体层11反射波长大于430纳米的光。
可选地，光子晶体层11对波长小于430纳米的蓝紫色光的透射率大于60％，对发光介质层12发出的光的反射率大于80％，示例地，该发出的光可以为红、绿、蓝三种颜色的光中的任意一种。
可选地，阵列基板021的背光侧设置有起偏器024，彩膜基板01面向阵列基板021的一侧设置有检偏器025，背光源023位于起偏器024远离阵列基板021的一侧。其中，起偏器024的偏振方向与检偏器025的偏振方向垂直。
在一个示例中，本发明的所提供的器件结构具有以下特点：以现有的LCD显示器件结构为基本框架，因此可移植性较高；另外，直接使用短波LED为背光源，从而减少了背光源端的能量损耗；其次，引入具有一维光子晶体微腔结构的特殊的显色层为常规的CF层。因此，光子晶体层根据特殊设计，使其对背光所在波段高度透 射，而对其他可见光波段具有高反射率。由检偏器发出的蓝光经一维光子晶体层透射进入显色层，并通过光致发光的方式，激发显色层中的发光物质分别发出红蓝绿三色光，该三色光分别在光子晶体层和半透半反层之间反射振荡，进而形成干涉，并最终从半透半反层射出。利用微腔的调制，使得最终的出射光半高宽窄，并最终具有和AMOLED可以比拟的饱和度。
本发明实施例提供的显示装置，使用蓝紫色LED作为背光源，激发发光介质层进行显色，相比于使用白光LED通过滤色片显色的传统方式更为高效节能。
现有技术中，背光源发出的光为由蓝色电致发光芯片配合黄色荧光粉形成的白光，形成白光的过程中存在能量损耗，且该白光依次通过起偏器、阵列基板、液晶层和检偏器，最终从彩膜基板射出，白光通过起偏器、阵列基板、液晶层、检偏器和彩膜基板时，也存在能量损耗，导致出射光的能量较低；本发明实施例提供的显示装置，采用波长小于430纳米的蓝紫色光作为背光源，该蓝紫色光可以有蓝紫色LED背光源发出，无需形成白光，避免了形成白光时的能量损耗，且背光源发出的蓝紫色光经过起偏器，阵列基板，液晶层，检偏器，到达彩膜基板后，直接激发彩膜基板中的发光介质层进行显色，比较传统的LCD显示而言，没有了滤色层的能量损失，从而达到了高效节能的效果。
以上所述仅为本发明的较佳实施例，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (15)

  1. 一种彩膜基板，包括：
    衬底基板；
    位于所述衬底基板上的光子晶体层；
    位于所述光子晶体层上与不同颜色像素对应的多个发光介质层，所述发光介质层能够在背光源的光线激发下发出对应颜色的光；
    位于所述发光介质层上的半透半反层；
    其中，所述光子晶体层用于将所述发光介质层发出的光反射至所述半透半反层，使得光在所述光子晶体层与所述半透半反层之间震荡并干涉，最终从所述半透半反层射出。
  2. 根据权利要求1所述的彩膜基板，其中，
    所述光子晶体层满足如下条件：对来自背光源的光的透射率大于60％，对来自发光介质层的光的反射率大于80％。
  3. 根据权利要求1所述的彩膜基板，其中，
    所述光子晶体层为一维光子晶体层；所述半透半反层为半透半反金属层；所述发光介质层为光致发光层。
  4. 根据权利要求3所述的彩膜基板，其中，所述光子晶体层采用至少两种折射率不同的透光材料层周期性层叠形成。
  5. 根据权利要求4所述的彩膜基板，其中，
    所述光子晶体层包括与所述每个发光介质层对应的多个光子晶体亚结构；
    其中，每个所述光子晶体亚结构采用至少两种折射率不同的透光材料层周期性层叠形成，每个所述光子晶体亚结构中的透光材料层为至少五层；
    任意两个光子晶体亚结构的光学禁带的禁带范围不同且存在交叠区域，任一所述光子晶体亚结构对光的反射率与所述透光材料层的层数正相关。
  6. 根据权利要求5所述的彩膜基板，其中，
    各所述光子晶体亚结构中采用的透光材料的种类相同，每个所述光子晶体亚结构中的透光材料层最多为十层；
    所述半透半反层为Ag或Al层，其厚度范围为10-15nm。
  7. 根据权利要求1所述的彩膜基板，其中，
    所述发光介质层的厚度D满足如下公式：
    Figure PCTCN2016075968-appb-100001
    其中，φ为所述发光介质层发出的光在反射界面上反射时的累计相位变化，n为所述发光介质层发出的光的主峰波长对应的折射率，所述反射界面包括：所述光子晶体层与所述发光介质层之间的界面和所述半透半反层与所述发光介质层之间的界面。
  8. 根据权利要求1所述的彩膜基板，其中，
    还包括位于所述半透半反层上的覆盖层。
  9. 根据权利要求1至8任一项所述的彩膜基板，其中，所述多个发光介质层包括与不同颜色像素对应的发红色光的发光介质层、发绿色光的发光介质层和发蓝色光的发光介质层，其中每个所述发光介质层由荧光层、磷光层或量子点层构成。
  10. 一种显示装置，所述显示装置包括：对盒而置的阵列基板和彩膜基板，所述彩膜基板为权利要求1至9任一项所述的彩膜基板。
  11. 根据权利要求10所述的显示装置，其中，所述显示装置还包括：背光源，
    所述背光源设置在所述阵列基板的背光侧；
    所述背光源发出的光为波长小于430纳米的蓝紫色光，所述光子晶体层为能够反射波长大于430纳米光的光子晶体层。
  12. 一种根据权利要求1-9中任一项所述的彩膜基板的制造方法，包括：
    在所述衬底基板上形成光子晶体层；
    在所述光子晶体层上形成与不同颜色像素对应的多个发光介质层，每个所述发光介质层能够在背光源的光线激发下发出相应颜色的光；
    在所述发光介质层上形成半透半反层；
    其中，所述光子晶体层用于反射所述发光介质层发出的光线至所述半透半反层，使得光线在所述光子晶体层与所述半透半反层之间震荡并干涉，最终从所述半透半反层射出。
  13. 根据权利要求12所述的制造方法，其中，在所述发光介质层上形成半透半反层包括：过真空热蒸镀的方式在所述发光介质层上形成厚度为10～15nm的银或铝层，使得银或铝层的反射率为60％～70％的范围内。
  14. 根据权利要求12所述的制造方法，其中，在所述光子晶体层上形成与不同颜色像素对应的多个发光介质层包括：
    在所述光子晶体层上形成与不同颜色像素对应的多个荧光层、磷光层或量子点层。
  15. 根据权利要求12所述的制造方法，还包括在所述半透半反层上形成覆盖层的步骤。
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