WO2016185984A1 - 処理システム - Google Patents
処理システム Download PDFInfo
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- WO2016185984A1 WO2016185984A1 PCT/JP2016/064066 JP2016064066W WO2016185984A1 WO 2016185984 A1 WO2016185984 A1 WO 2016185984A1 JP 2016064066 W JP2016064066 W JP 2016064066W WO 2016185984 A1 WO2016185984 A1 WO 2016185984A1
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- load lock
- lock module
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- processing chamber
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Definitions
- Various aspects and embodiments of the present invention relate to a processing system.
- a plurality of substrates to be processed may be processed in parallel using a plurality of substrate processing apparatuses.
- a plurality of substrate processing apparatuses are arranged in a facility such as a clean room, the area occupied by the plurality of substrate processing apparatuses increases. Therefore, a larger clean room is required, and the equipment cost increases.
- One aspect of the present invention is a processing system including, for example, one or more processing units.
- Each processing unit has a plurality of processing chambers and a utility module.
- Each processing chamber processes an object to be processed using the supplied processing gas.
- the utility module includes a flow rate control unit that controls the flow rate of the processing gas supplied to each of the plurality of processing chambers.
- the plurality of processing chambers are stacked in the vertical direction.
- the utility module is disposed between two processing chambers adjacent in the vertical direction among the plurality of processing chambers.
- the occupation area of the entire processing system can be reduced.
- FIG. 1 is a diagram illustrating an example of a processing system.
- FIG. 2 is a diagram illustrating an example of a processing unit.
- FIG. 3 is a diagram illustrating an example of a processing unit viewed from the direction A in FIG.
- FIG. 4 is a diagram illustrating an example of a processing unit viewed from the direction B in FIG.
- FIG. 5 is a diagram illustrating an example of a processing system having a different number of processing units.
- FIG. 6 is a diagram illustrating another example of the processing unit.
- FIG. 7 is a diagram illustrating still another example of the processing unit.
- the disclosed processing system includes one or more processing units in one embodiment.
- Each processing unit has a plurality of processing chambers and a utility module.
- Each processing chamber processes an object to be processed using the supplied processing gas.
- the utility module includes a flow rate control unit that controls the flow rate of the processing gas supplied to each of the plurality of processing chambers.
- the plurality of processing chambers are stacked in the vertical direction.
- the utility module is disposed between two processing chambers adjacent in the vertical direction among the plurality of processing chambers.
- each processing unit has a first pipe through which a processing gas distributed from the flow rate control unit to each of the plurality of processing chambers flows.
- the length of the first pipe to each of the plurality of processing chambers may be the same among the plurality of processing chambers in the processing unit.
- each processing unit has a load lock module disposed adjacent to the processing chamber for each processing chamber, in a direction from the load lock module to the processing chamber.
- the width of the load lock module is narrower than the width of the processing chamber disposed adjacent to the load lock module
- the first pipe is a load lock of the side surface of the processing chamber on the side where the load lock module is disposed.
- the utility module may further include an exhaust control unit that controls an exhaust amount of gas exhausted from each of the plurality of processing chambers included in the processing unit.
- each processing unit includes a second pipe through which gas exhausted from each of the plurality of processing chambers flows, and exhaust control is performed from each of the plurality of processing chambers.
- the length of the second pipe to the portion may be the same among the plurality of processing chambers in the processing unit.
- each processing unit has a load lock module disposed adjacent to the processing chamber for each processing chamber, in a direction from the load lock module to the processing chamber.
- the width of the load lock module is narrower than the width of the processing chamber disposed adjacent to the load lock module, and the second piping is the load lock of the side of the processing chamber on the side where the load lock module is disposed.
- the utility module further includes a remote plasma generation unit that generates plasma and supplies radicals in the generated plasma to each of a plurality of processing chambers of the processing unit. You may have.
- each processing unit includes a third pipe through which radicals generated by a remote plasma generation unit and distributed to each of the plurality of processing chambers flow,
- the length of the third piping from the plasma generation unit to each of the plurality of processing chambers may be the same among the plurality of processing chambers in the processing unit.
- each processing unit has a load lock module disposed adjacent to the processing chamber for each processing chamber, in a direction from the load lock module to the processing chamber.
- the width of the load lock module is narrower than the width of the processing chamber disposed adjacent to the load lock module, and the third piping is the load lock of the side of the processing chamber on the side where the load lock module is disposed.
- the number of the plurality of processing chambers included in each processing unit is an even number equal to or greater than 2, and the utility module includes n as the number of processing chambers included in the processing unit. In this case, it may be arranged between the n / 2th processing chamber from the top and the (n / 2) + 1st processing chamber from the top.
- the disclosed processing system may be able to increase or decrease the processing units in units of processing units in one embodiment.
- FIG. 1 is a diagram illustrating an example of a processing system 10.
- FIG. 1 schematically shows the processing system 10 as viewed from above.
- the processing system 10 in this embodiment includes, for example, as shown in FIG. 1, an LM (Loader Module) 11, a transfer chamber 12, and a plurality of processing units 20-1 to 20-12.
- the processing system 10 is installed in a clean room, for example.
- the processing units 20-1 to 20-12 are collectively referred to as the processing unit 20 without being distinguished from each other.
- 1 illustrates the processing system 10 having 12 processing units 20, the processing system 10 may be provided with 11 or less processing units 20, and 13 or more processing units. 20 may be provided.
- a plurality of ports are provided on the front side of the LM 11 (upper side in FIG. 1), and a cassette in which an unprocessed substrate W is stored is set in each port by an operator or a cassette transport system.
- the unprocessed substrate W is an example of an object to be processed.
- a transfer chamber 12 and a plurality of processing units 20 are disposed on the back side of the LM 11.
- the plurality of processing units 20 are arranged in two rows in the horizontal direction (for example, the x-axis direction shown in FIG. 1) across the transfer chamber 12, and in each row, the horizontal direction (for example, FIG. 1). 6 processing units 20 are arranged in the y-axis direction shown in FIG.
- a power supply unit 14 is disposed on the back side of the processing system 10.
- Each processing unit 20 is provided with a plurality of processing chambers.
- the power supply unit 14 supplies high-frequency power having a predetermined frequency to each processing chamber.
- a transfer device 13 such as a mobile robot arm is provided in the transfer chamber 12.
- the transfer device 13 takes out the unprocessed substrate W from the cassette set in the port of the LM 11. Then, the transfer device 13 moves in the transfer chamber 12 and transfers the substrate W taken out from the cassette to the processing chamber in one of the processing units 20. Then, the substrate W processed in the processing chamber is taken out of the processing chamber by the transfer device 13 and returned to the cassette set in the port of the transfer chamber 12.
- FIG. 2 is a diagram illustrating an example of the processing unit 20.
- FIG. 3 is a diagram illustrating an example of the processing unit 20 viewed from the direction A in FIG.
- FIG. 4 is a diagram illustrating an example of the processing unit 20 viewed from the direction B in FIG.
- the processing unit 20 includes a plurality of processing chambers 22-1 to 22-4 as shown in FIGS. 3 and 4, for example.
- the plurality of processing chambers 22-1 to 22-4 are collectively referred to as the processing chamber 22 without being distinguished from each other.
- the plurality of processing chambers 22-1 to 22-4 are arranged so as to overlap in the vertical direction (for example, the z-axis direction shown in FIGS. 3 and 4).
- four processing chambers 22-1 to 22-4 are stacked, but three or less processing chambers 22 may be stacked, Five or more processing chambers 22 may be stacked.
- the number of processing chambers 22 included in the processing unit 20 is an even number.
- Each processing chamber 22 includes a matching unit 220, a shower head 221, and a mounting table 222.
- the matching unit 220 is a circuit that matches the output impedance of the high-frequency power source and the load impedance.
- the shower head 221 supplies a processing gas supplied from a flow rate control unit 31 described later into the processing chamber 22.
- the shower head 221 is applied with high frequency power of a predetermined frequency supplied via the matching unit 220.
- the shower head 221 functions as an upper electrode with respect to the mounting table 222.
- the mounting table 222 mounts the substrate W to be processed on the upper surface.
- the mounting table 222 functions as a lower electrode for the shower head 221.
- LLMs Lock Modules 21-1 to 21-4 are arranged adjacent to each other in the x-axis direction.
- LLM21 each of the plurality of LLMs 21-1 to 21-4 is collectively referred to as LLM21 without being distinguished.
- Each LLM 21 includes a gate valve 210, a transfer device 211, and a gate valve 212.
- a utility module 30 is disposed between the processing chambers 22 adjacent in the vertical direction, for example, as shown in FIGS.
- n (n is an even number) processing chambers 22 are arranged in the vertical direction, and the utility module 30 includes an n / 2th processing chamber from the top and a top ( n / 2) is arranged between the + 1st processing chamber.
- four processing chambers 22 are arranged in the vertical direction, and the utility module 30 includes the second processing chamber from the top and the third processing from the top. It is arranged between the chambers.
- the utility module 30 includes a flow rate control unit 31 and an exhaust valve 32.
- the flow rate control unit 31 controls the flow rate of the processing gas supplied from the gas supply source 40 to a predetermined flow rate, and supplies the processing gas whose flow rate is controlled to each processing chamber 22 via the piping 230.
- the flow rate control unit 31 may control the flow rate of the cleaning gas supplied from the gas supply source 40 to a predetermined flow rate and supply the cleaning gas to each processing chamber 22 via the pipe 230.
- the pipe 230 is an example of a first pipe.
- the exhaust valve 32 is connected to each processing chamber 22 via a pipe 231 and is connected to an exhaust device 41 such as a turbo molecular pump via a pipe 232.
- the exhaust valve 32 controls the exhaust amount of the gas exhausted from each processing chamber 22 by the exhaust device 41.
- the pipe 231 is an example of a second pipe.
- the exhaust valve 32 is an example of an exhaust control unit.
- the length of the piping 230 from the flow rate control unit 31 to each processing chamber 22 is the same among all the processing chambers 22 in the processing unit 20. Thereby, even when the flow rate of the processing gas is controlled by one flow rate control unit 31, the difference in the flow rate of the processing gas supplied to each processing chamber 22 can be reduced. Thereby, the flow rate of the processing gas supplied to the plurality of processing chambers 22 can be accurately controlled by the single flow rate control unit 31. Therefore, it is not necessary to individually provide the flow rate control unit 31 in each processing chamber 22, and the processing unit 20 can be reduced in size and cost.
- the length of the pipe 231 from each processing chamber 22 to the exhaust valve 32 is the same among all the processing chambers 22 in the processing unit 20. Therefore, even when the exhaust amount of gas is controlled by one exhaust valve 32, the difference in the exhaust amount of gas exhausted from each processing chamber 22 can be reduced. Thereby, the exhaust amount of the gas exhausted from the plurality of processing chambers 22 by one exhaust valve 32 can be accurately controlled. Therefore, it is not necessary to individually provide the exhaust valve 32 in each processing chamber 22, and the processing unit 20 can be reduced in size and cost.
- the utility module 30 is disposed approximately at the center of the processing unit 20 in the vertical direction, for example, as shown in FIGS.
- the length of the piping 230 connected to each processing chamber 22 from the gas supply source 40 in the utility module 30 and the length of the piping 231 connected from each processing chamber 22 to the exhaust valve 32 in the utility module 30 are shortened. can do.
- the conductance of the piping 230 and the piping 231 can be increased, and the pressure control in each processing chamber 22 is facilitated.
- the processing unit 20 can be reduced in size and cost.
- the width L1 of the LLM 21 is larger than the width L2 of the processing chamber 22 arranged adjacent to the LLM 21. Is too narrow. Therefore, when the processing chambers 22 of the adjacent processing units 20 are disposed adjacent to each other, for example, as illustrated in FIG. 2, a region of the side surface of the processing chamber 22 on the side where the LLM 21 is disposed is not adjacent to the LLM 21.
- a gap 23 surrounded by the side surface 223 and a side surface 213 extending in the direction from the LLM 21 toward the processing chamber 22 among the side surfaces of the LLM 21 is formed.
- a pipe 230 and a pipe 231 are arranged in the gap 23.
- the gate valve 212 of the LLM 21 is opened, and the unprocessed substrate W is placed on the transfer device 211 in the LLM 21 by the transfer device 13. Then, the gate valve 212 is closed and the inside of the LLM 21 is decompressed. Then, the gate valve 210 is opened, and the unprocessed substrate W is loaded into the processing chamber 22 by the transfer device 211 and mounted on the mounting table 222. Then, the gate valve 210 is closed again.
- the processing gas whose flow rate is adjusted is supplied to each processing chamber 22 by the flow rate control unit 31.
- the processing gas supplied from the flow rate control unit 31 is supplied from the shower head 221 into the processing chamber 22.
- the exhaust amount of each processing chamber 22 is controlled by the exhaust valve 32, and the inside of the processing chamber 22 is controlled to a predetermined pressure.
- a high-frequency power having a predetermined frequency is applied to the shower head 221 via the matching unit 220, so that plasma of a processing gas is generated in the processing chamber 22, and the generated plasma is mounted on the mounting table 222.
- a predetermined process such as etching or film formation is performed on the substrate W.
- the gate valve 210 When the processing on the substrate W is completed, the gate valve 210 is opened, and the processed substrate W is unloaded from the processing chamber 22 by the transfer device 211. Then, the gate valve 210 is closed, and the pressure in the LLM 21 is returned to atmospheric pressure. Then, the gate valve 212 is opened, and the processed substrate W is unloaded from the LLM 21 by the transfer device 13.
- the processing system 10 of this embodiment can be increased or decreased in units of 20 processing units.
- the processing system 10-2 having 12 processing units 20 by increasing the processing units 20 in the y-axis direction, for example, the processing system 10-1 having 14 processing units 20 is provided. Can be configured.
- the processing system 10 having 10 processing units 20, for example. -3 can be configured.
- the processing unit 20 in which the plurality of processing chambers 22 are arranged in a stack can be added or reduced, the processing unit has a higher degree of freedom depending on the area of the installation place and the required processing capacity. 20 can be configured.
- the plurality of processing chambers 22 included in the processing unit 20 perform the same processing on the substrate W to be processed because the processing gas supplied via the flow rate control unit 31 is common.
- different processing may be performed on the processing target substrate W in the processing chambers 22 included in the separate processing units 20.
- the film forming process may be performed in the processing units 20-1 to 20-6, and the etching process may be performed in the processing units 20-7 to 20-12.
- the processing system 10 may include a device that performs processing performed under an atmospheric pressure environment, such as a cleaning device, a heat treatment device, and a coater / developer.
- the processing chamber 22 included in each processing unit 20 generates plasma using the processing gas supplied via the flow rate control unit 31 and the high-frequency power supplied via the matching unit 220.
- the disclosed technology is not limited to this.
- plasma is generated by a remote plasma generation unit 33 provided in the utility module 30, and radicals in the generated plasma are supplied to each processing chamber 22 via a pipe 233, and It may be supplied into the processing chamber 22 from a shower head 221 in the processing chamber 22.
- the pipe 233 is an example of a third pipe.
- the length of the pipe 233 from the remote plasma generation unit 33 to each processing chamber 22 is the same among all the processing chambers 22 in the processing unit 20.
- the difference in the amount of radicals supplied to each processing chamber 22 can be reduced.
- the amount of radicals supplied from one remote plasma generation unit 33 to each processing chamber 22 can be accurately controlled. Therefore, it is not necessary to individually generate plasma in each processing chamber 22, and the processing unit 20 can be reduced in size and cost.
- one exhaust pump 34 for depressurizing each LLM 21 may be provided in the utility module 30, and the gas in each LLM 21 may be exhausted via a pipe 234.
- the gas exhausted from each LLM 21 by the exhaust pump 34 is sent to the exhaust gas treatment device 42.
- the process gas supply path to each process chamber 22 and the gas exhaust path exhausted from each process chamber 22 are omitted.
- the plurality of LLMs 21 in the processing unit 20 can be depressurized by one exhaust pump 34, so that the processing unit 20 can be reduced in size and cost as compared with the case where the exhaust pump 34 is provided for each LLM 21. Can be reduced.
- the length of the pipe 234 from each LLM 21 to the exhaust pump 34 is preferably the same among all the LLMs 21 in the processing unit 20. Thereby, in several LLM21 in the processing unit 20, the time difference until it depressurizes from atmospheric pressure to a predetermined vacuum degree can be made small. Thereby, processing time can be reduced.
- the piping 234 from each LLM 21 to the exhaust pump 34 is surrounded by the side surface 213 of the LLM 21 and the side surface 223 of the processing chamber 22 as shown in FIG. 2. It is preferable to arrange in the gap 23.
- n (n is an even number) processing chambers 22 are stacked in the vertical direction, and the n / 2th processing chamber 22 from the top and (n / 2) from the top.
- the utility module 30 is disposed between the + 1st processing chamber 22, the disclosed technique is not limited thereto.
- the utility module 30 may be disposed above the uppermost processing chamber 22, below the lowermost processing chamber 22, or between any two processing chambers 22 adjacent in the vertical direction.
- the piping 230 connected from the flow rate control unit 31 in the utility module 30 to each processing chamber 22 and the piping 231 connected from each processing chamber 22 to the exhaust valve 32 are not included in the processing unit 20.
- all of the processing chambers 22 within are of the same length.
- Processing System 11 LM 12 Transfer chamber 13 Transfer device 14 Power supply unit 20 Processing unit 21 LLM 210 Gate valve 211 Transfer device 212 Gate valve 22 Processing chamber 220 Matching unit 221 Shower head 222 Mounting table 23 Gap 230 Pipe 231 Pipe 232 Pipe 233 Pipe 234 Pipe 30 Utility module 31 Flow control unit 32 Exhaust valve 33 Remote plasma generator 34 Exhaust Pump 40 Gas supply source 41 Exhaust device 42 Exhaust gas treatment device
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Abstract
Description
図1は、処理システム10の一例を示す図である。図1は、上方から見た処理システム10を模式的に示している。本実施形態における処理システム10は、例えば図1に示すように、LM(Loader Module)11、搬送室12、および複数の処理ユニット20-1~20-12を備える。処理システム10は、例えばクリーンルーム内に設置される。なお、以下では、複数の処理ユニット20-1~20-12のそれぞれを区別することなく総称する場合に処理ユニット20と記載する。また、図1では、12台の処理ユニット20を有する処理システム10が例示されているが、処理システム10には、11台以下の処理ユニット20が設けられてもよく、13台以上の処理ユニット20が設けられていてもよい。
図2は、処理ユニット20の一例を示す図である。図3は、図2のA方向から見た処理ユニット20の一例を示す図である。図4は、図2のB方向から見た処理ユニット20の一例を示す図である。
11 LM
12 搬送室
13 搬送装置
14 電源ユニット
20 処理ユニット
21 LLM
210 ゲートバルブ
211 搬送装置
212 ゲートバルブ
22 処理チャンバ
220 整合器
221 シャワーヘッド
222 載置台
23 隙間
230 配管
231 配管
232 配管
233 配管
234 配管
30 ユーティリティモジュール
31 流量制御部
32 排気バルブ
33 リモートプラズマ生成部
34 排気ポンプ
40 ガス供給源
41 排気装置
42 排ガス処理装置
Claims (11)
- 1以上の処理ユニットを備え、
それぞれの前記処理ユニットは、
供給された処理ガスを用いて被処理体を処理する複数の処理チャンバと、
前記複数の処理チャンバのそれぞれに供給される前記処理ガスの流量を制御する流量制御部を含むユーティリティモジュールと
を有し、
前記複数の処理チャンバは、上下方向に重ねて配置され、
前記ユーティリティモジュールは、前記複数の処理チャンバのうち、上下方向に隣接する2つの処理チャンバの間に配置されることを特徴とする処理システム。 - それぞれの前記処理ユニットは、
前記流量制御部から前記複数の処理チャンバのそれぞれに分配される前記処理ガスが流通する第1の配管を有し、
前記流量制御部から前記複数の処理チャンバのそれぞれまでの前記第1の配管の長さは、前記処理ユニット内の前記複数の処理チャンバ間で同一であることを特徴とする請求項1に記載の処理システム。 - それぞれの前記処理ユニットは、
前記処理チャンバ毎に、前記処理チャンバに隣接して配置されたロードロックモジュールを有し、
前記ロードロックモジュールから前記処理チャンバへ向かう方向において、前記ロードロックモジュールの幅は、前記ロードロックモジュールに隣接して配置された前記処理チャンバの幅よりも狭く、
前記第1の配管は、
前記ロードロックモジュールが配置された側の前記処理チャンバの側面のうち、前記ロードロックモジュールに隣接していない領域の側面と、前記ロードロックモジュールの側面のうち、前記ロードロックモジュールから前記処理チャンバへ向かう方向に延在する側面とで形成された隙間に配置されることを特徴とする請求項2に記載の処理システム。 - 前記ユーティリティモジュールは、
前記処理ユニットが有する前記複数の処理チャンバのそれぞれから排気されるガスの排気量を制御する排気制御部をさらに有することを特徴とする請求項1に記載の処理システム。 - それぞれの前記処理ユニットは、
前記複数の処理チャンバのそれぞれから排気されるガスが流通する第2の配管を有し、
前記複数の処理チャンバのそれぞれから前記排気制御部までの前記第2の配管の長さは、前記処理ユニット内の前記複数の処理チャンバ間で同一であることを特徴とする請求項4に記載の処理システム。 - 前記処理ユニットは、
前記処理チャンバ毎に、前記処理チャンバに隣接して配置されたロードロックモジュールを有し、
前記ロードロックモジュールから前記処理チャンバへ向かう方向において、前記ロードロックモジュールの幅は、前記ロードロックモジュールに隣接して配置された前記処理チャンバの幅よりも狭く、
前記第2の配管は、
前記ロードロックモジュールが配置された側の前記処理チャンバの側面のうち、前記ロードロックモジュールに隣接していない領域の側面と、前記ロードロックモジュールの側面のうち、前記ロードロックモジュールから前記処理チャンバへ向かう方向に延在する側面とで形成された隙間に配置されることを特徴とする請求項5に記載の処理システム。 - 前記ユーティリティモジュールは、
プラズマを生成し、生成されたプラズマ中のラジカルを、前記処理ユニットが有する前記複数の処理チャンバのそれぞれに供給するリモートプラズマ生成部をさらに有することを特徴とする請求項1に記載の処理システム。 - それぞれの前記処理ユニットは、
前記リモートプラズマ生成部によって生成され、前記複数の処理チャンバのそれぞれに分配されるラジカルが流通する第3の配管を有し、
前記複数の処理チャンバのそれぞれから前記リモートプラズマ生成部までの前記第3の配管の長さは、前記処理ユニット内の前記複数の処理チャンバ間で同一であることを特徴とする請求項7に記載の処理システム。 - それぞれの前記処理ユニットは、
前記処理チャンバ毎に、前記処理チャンバに隣接して配置されたロードロックモジュールを有し、
前記ロードロックモジュールから前記処理チャンバへ向かう方向において、前記ロードロックモジュールの幅は、前記ロードロックモジュールに隣接して配置された前記処理チャンバの幅よりも狭く、
前記第3の配管は、
前記ロードロックモジュールが配置された側の前記処理チャンバの側面のうち、前記ロードロックモジュールに隣接していない領域の側面と、前記ロードロックモジュールの側面のうち、前記ロードロックモジュールから前記処理チャンバへ向かう方向に延在する側面とで形成された隙間に配置されることを特徴とする請求項8に記載の処理システム。 - それぞれの前記処理ユニットが有する前記複数の処理チャンバの数は2以上の偶数であり、
前記ユーティリティモジュールは、
前記処理ユニットが有する前記複数の処理チャンバの数をnとした場合に、上からn/2番目の処理チャンバと、上から(n/2)+1番目の処理チャンバとの間に配置されることを特徴とする請求項1に記載の処理システム。 - 前記処理ユニット単位で、前記処理ユニットの増減が可能であることを特徴とする請求項1に記載の処理システム。
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