WO2016151717A1 - 圧縮成形用モールドアンダーフィル材料、半導体パッケージ、構造体および半導体パッケージの製造方法 - Google Patents

圧縮成形用モールドアンダーフィル材料、半導体パッケージ、構造体および半導体パッケージの製造方法 Download PDF

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WO2016151717A1
WO2016151717A1 PCT/JP2015/058670 JP2015058670W WO2016151717A1 WO 2016151717 A1 WO2016151717 A1 WO 2016151717A1 JP 2015058670 W JP2015058670 W JP 2015058670W WO 2016151717 A1 WO2016151717 A1 WO 2016151717A1
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WO
WIPO (PCT)
Prior art keywords
compression molding
underfill material
mold underfill
mold
substrate
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PCT/JP2015/058670
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English (en)
French (fr)
Japanese (ja)
Inventor
伊藤　祐輔
Original Assignee
住友ベークライト株式会社
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Application filed by 住友ベークライト株式会社 filed Critical 住友ベークライト株式会社
Priority to KR1020177026889A priority Critical patent/KR102367126B1/ko
Priority to CN201580078153.0A priority patent/CN107429041B/zh
Priority to PCT/JP2015/058670 priority patent/WO2016151717A1/ja
Publication of WO2016151717A1 publication Critical patent/WO2016151717A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013—Fillers, pigments or reinforcing additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector

Definitions

  • the present invention relates to a mold underfill material for compression molding, a semiconductor package, a structure, and a method for manufacturing a semiconductor package.
  • a mold underfill material that collectively fills a gap between the substrate and the semiconductor element and seals the semiconductor element may be used.
  • a technique regarding the mold underfill material for example, a technique described in Patent Document 1 can be cited.
  • Patent Document 1 is a technique related to an epoxy resin composition for a mold underfill material. Specifically, a non-liquid epoxy resin composition containing an epoxy resin, a curing agent, an inorganic filler, and a curing accelerator is described.
  • the filling of the gap between the substrate and the semiconductor element and the sealing of the semiconductor element are collectively performed using a mold underfill material, the filling ability in the gap may not be sufficiently obtained. For this reason, the mold underfill material excellent in the filling property is calculated
  • a mold underfill material for compression molding that seals a semiconductor element disposed on a substrate and is filled in a gap between the substrate and the semiconductor element, Epoxy resin (A), A curing agent (B); An inorganic filler (C); Including A granular material, Compression molding in which the time T (5) from the start of measurement until reaching 5% of the maximum torque is 25 seconds or more and 100 seconds or less when measured using a curast meter at a mold temperature of 175 ° C.
  • a mold underfill material is provided.
  • the above-described mold underfill material for compression molding is used to seal the semiconductor element disposed on the substrate and fill the gap between the substrate and the semiconductor element.
  • a semiconductor package is provided.
  • the above-described mold underfill material for compression molding is used to seal a plurality of semiconductor elements disposed on a substrate and to fill a gap between the substrate and each semiconductor element.
  • the structure obtained by this is provided.
  • Arranging a semiconductor element on a substrate via a bump Arranging a semiconductor element on a substrate via a bump; A step of sealing the semiconductor element and filling a gap between the substrate and the semiconductor element by the compression molding mold underfill material using a compression molding method; A method for manufacturing a semiconductor package is provided.
  • the mold underfill material according to this embodiment is a mold underfill material for compression molding that seals a semiconductor element disposed on a substrate and is filled in a gap between the substrate and the semiconductor element.
  • the mold underfill material for compression molding contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C).
  • the mold underfill material for compression molding is a granular material.
  • the mold underfill material for compression molding has a time T (5) from the start of measurement until it reaches 5% of the maximum torque when measured under a mold temperature of 175 ° C. using a curast meter. 25 seconds or more and 100 seconds or less.
  • the sealing of the semiconductor element using the mold underfill material and the filling of the gap located under the semiconductor element may be performed by a transfer molding method, for example.
  • a transfer molding method for example.
  • the present inventor has studied performing sealing molding of a mold underfill material using a compression molding method. However, even in such a case, a better filling property with respect to the gap between the substrate and the semiconductor element has been demanded.
  • the present inventor collectively performs sealing of the semiconductor element and filling of the gap located under the semiconductor element by a compression molding method by controlling the curing characteristics measured by the curast meter for the mold underfill material.
  • a time T (5) from the start of measurement until reaching 5% of the maximum torque when measured using a curast meter at a mold temperature of 175 ° C. Provides a mold underfill material for compression molding that is 25 seconds or more and 100 seconds or less. Thereby, it is possible to realize a mold underfill material having excellent filling properties.
  • the mold underfill material for compression molding seals the semiconductor element disposed on the substrate and fills the gap between the substrate and the semiconductor element.
  • the sealing of the semiconductor element and the filling of the gap between the substrate and the semiconductor element are performed collectively using a compression molding method.
  • the mold underfill material excellent in filling property and ash content uniformity can be formed.
  • Such an effect is particularly prominent in large-area sealing molding such as MAP molding.
  • the substrate is a wiring substrate such as an interposer, for example.
  • the semiconductor element is flip-chip mounted on a substrate, for example.
  • semiconductor packages such as BGA (Ball Grid Array) and CSP (Chip Size Package) are formed by sealing and filling using a mold underfill material for compression molding.
  • the present invention also relates to a structure formed by MAP (Mold Array Package) molding.
  • the mold underfill material for compression molding is a granular material.
  • the mold underfill material for compression molding is a granular material refers to the case where it is either powdered or granular.
  • the mold underfill material for compression molding according to the present embodiment can be, for example, granular.
  • Excellent fillability and ash uniformity can be achieved.
  • the ratio of fine powder having a particle size of less than 106 ⁇ m to the whole mold underfill material for compression molding is 5 mass%. Or less, more preferably 3% by mass or less.
  • the mold underfill material for compression molding in the present embodiment has a ratio of coarse particles having a particle diameter of 2 mm or more to the whole mold underfill material for compression molding in the particle size distribution measured by sieving using a JIS standard sieve. It is preferably 3% by mass or less, and more preferably 2% by mass or less. By setting the ratio of coarse particles having a particle diameter of 2 mm or more to the upper limit value or less, it is possible to reduce unevenness in compression molding and improve the uniformity of the cured resin thickness.
  • the material that is a granular material melts uniformly without becoming a lump, and suppresses partial gel and unevenness of curing, ash content uniformity and moldability during compression molding It is also possible to improve.
  • JIS standard sieves having openings of 2.00 mm, 1.00 mm and 106 ⁇ m provided in a low-tap type sieve vibrator are used.
  • the sample was passed through a sieve while vibrating (hammer strike rate: 120 times / minute) for 20 minutes, and the particles remaining on the 2.00 mm and 1.00 mm sieves were classified with respect to the total sample weight before classification.
  • An example is a method for determining the ratio (mass%) and the ratio (mass%) of fine powder passing through a 106 ⁇ m sieve. When this method is used, particles having a high aspect ratio may pass through each sieve.
  • the mass% of each component classified according to the above-described constant condition is the amount of particles having a particle size corresponding to each component with respect to the entire mold underfill material for compression molding. It can be defined as a percentage.
  • the mold underfill material for compression molding is time T (from the start of measurement until it reaches 5% of the maximum torque when measured under the condition of a mold temperature of 175 ° C. using a curast meter. 5) is 25 seconds or more and 100 seconds or less.
  • the torque at 300 seconds from the start of measurement can be defined as the maximum torque.
  • the time T (5) is more preferably 30 seconds or more and 90 seconds or less, and 45 seconds or more in consideration of further stability of fillability and ash uniformity. It is particularly preferable that it is 80 seconds or less.
  • the time T (5) is controlled by appropriately adjusting, for example, the type and content of each component contained in the compression molding mold underfill material, the particle size distribution of the compression molding mold underfill material, and the like. Is possible.
  • the types and contents of the curing agent (B) and the inorganic filler (C) include those types and contents when the curing accelerator (D) and the coupling agent (E) are included. It is mentioned to adjust.
  • the compression molding mold underfill material in the present embodiment has a viscosity ⁇ at 175 ° C. measured using a Koka flow tester of, for example, 3.5 Pa ⁇ second or more and 15 Pa ⁇ second or less.
  • a viscosity ⁇ By setting the viscosity ⁇ to 3.5 Pa ⁇ sec or more, a mold underfill material for compression molding having excellent moldability can be realized. Further, by setting the viscosity ⁇ to 15 Pa ⁇ sec or less, the filling property to the gap between the substrate and the semiconductor element can be more effectively improved in the compression molding.
  • the viscosity ⁇ is more preferably from 3.5 Pa ⁇ second to 10 Pa ⁇ second, and particularly preferably from 4.0 Pa ⁇ second to 10 Pa ⁇ second. .
  • the viscosity ⁇ can be controlled, for example, by appropriately adjusting the type and content of each component contained in the compression molding mold underfill material, the particle size distribution of the compression molding mold underfill material, and the like. is there.
  • the temperature is 175 ° C.
  • the load is 40 kgf (piston area 1 cm 2 )
  • the die hole diameter is 0.50 mm
  • the die length is 1.00 mm.
  • the apparent viscosity of the melted mold underfill material for compression molding can be the viscosity ⁇ .
  • the viscosity ⁇ can be calculated by, for example, the following calculation formula.
  • Q is a flow rate of the mold underfill material flowing per unit time.
  • time T (5) / viscosity ⁇ by adjusting the time T (5) / viscosity ⁇ , it is possible to improve the balance of filling property, moldability, fluidity and curability of the mold underfill material for compression molding.
  • time T (5) / viscosity ⁇ for example preferably 2 Pa -1 or 30 Pa -1 or less, more preferably 4 Pa -1 or 25 Pa -1 or less, it is particularly preferred 5pa -1 or 20 Pa -1 or less.
  • time T (5) / viscosity ⁇ is an important concept.
  • the mold underfill material for compression molding includes an epoxy resin (A), a curing agent (B), and an inorganic filler (C). Thereby, it becomes possible to shape
  • epoxy resin (A) As the epoxy resin (A), monomers, oligomers and polymers generally having two or more epoxy groups in one molecule can be used, and the molecular weight and molecular structure are not particularly limited.
  • the epoxy resin (A) for example, biphenyl type epoxy resin; bisphenol type epoxy resin such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, tetramethylbisphenol F type epoxy resin; stilbene type epoxy resin; Novolak type epoxy resins such as phenol novolac type epoxy resins and cresol novolak type epoxy resins; polyfunctional epoxy resins such as triphenolmethane type epoxy resins and alkyl-modified triphenolmethane type epoxy resins; phenol aralkyl type epoxy resins having a phenylene skeleton; Aralkyl-type epoxy resins such as phenol aralkyl-type epoxy resins having a biphenylene skeleton; dihydroxynaphthalene-type epoxy resin, dihydroxynaphthalene
  • biphenyl type epoxy resins bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol type epoxy resins such as tetramethylbisphenol F type epoxy resins, and stilbene type epoxy resins have crystallinity. Is preferred.
  • the epoxy resin (A) is selected from the group consisting of an epoxy resin represented by the following formula (1), an epoxy resin represented by the following formula (2), and an epoxy resin represented by the following formula (3). It is particularly preferable to use a material containing at least one kind.
  • Ar 1 represents a phenylene group or a naphthylene group, and when Ar 1 is a naphthylene group, the glycidyl ether group may be bonded to either the ⁇ -position or the ⁇ -position.
  • Ar 2 is a phenylene group.
  • R a and R b each independently represents a hydrocarbon group having 1 to 10 carbon atoms, g is an integer of 0 to 5 and h represents a group selected from the group consisting of a biphenylene group and a naphthylene group. Is an integer from 0 to 8.
  • n 3 represents the degree of polymerization, and the average value is from 1 to 3.
  • R c s each independently represent a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms.
  • N 5 represents a degree of polymerization, and an average value thereof is 0 to 4)
  • R d and R e each independently represents a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms.
  • N 6 represents the degree of polymerization, and the average value thereof is 0 to 4)
  • the content of the epoxy resin (A) in the mold underfill material for compression molding is preferably 3% by mass or more with respect to the entire mold underfill material for compression molding, and is 4% by mass or more. More preferably, it is particularly preferably 6% by mass or more.
  • the content of the epoxy resin (A) in the mold underfill material for compression molding is preferably 30% by mass or less, and preferably 20% by mass or less with respect to the entire mold underfill material for compression molding. Is more preferable.
  • the curing agent (B) contained in the encapsulating resin composition can be roughly classified into three types, for example, a polyaddition type curing agent, a catalyst type curing agent, and a condensation type curing agent.
  • Examples of the polyaddition type curing agent used in the curing agent (B) include aliphatic polyamines such as diethylenetriamine (DETA), triethylenetetramine (TETA), and metaxylylenediamine (MXDA), diaminodiphenylmethane (DDM), In addition to aromatic polyamines such as m-phenylenediamine (MPDA) and diaminodiphenylsulfone (DDS), polyamine compounds including dicyandiamide (DICY) and organic acid dihydrazide; hexahydrophthalic anhydride (HHPA), methyltetrahydrophthalic anhydride ( Acid anhydrides including alicyclic acid anhydrides such as MTHPA), trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), benzophenone tetracarboxylic acid (BTDA), etc .; novolac type Phenol resins, phenol resin-based curing agent such as polyviny
  • Examples of the catalyst-type curing agent used in the curing agent (B) include tertiary amine compounds such as benzyldimethylamine (BDMA) and 2,4,6-trisdimethylaminomethylphenol (DMP-30); Examples thereof include imidazole compounds such as imidazole and 2-ethyl-4-methylimidazole (EMI24); Lewis acids such as BF3 complex.
  • BDMA benzyldimethylamine
  • DMP-30 2,4,6-trisdimethylaminomethylphenol
  • Examples thereof include imidazole compounds such as imidazole and 2-ethyl-4-methylimidazole (EMI24); Lewis acids such as BF3 complex.
  • condensation type curing agent used for the curing agent (B) examples include a resol type phenol resin; a urea resin such as a methylol group-containing urea resin; and a melamine resin such as a methylol group-containing melamine resin.
  • a phenol resin-based curing agent is preferable from the viewpoint of improving the balance of flame resistance, moisture resistance, electrical properties, curability, storage stability, and the like.
  • the phenol resin-based curing agent monomers, oligomers, and polymers in general having two or more phenolic hydroxyl groups in one molecule can be used, and the molecular weight and molecular structure are not particularly limited.
  • the phenolic resin-based curing agent used in the curing agent (B) include novolak-type phenol resins such as phenol novolak resin, cresol novolac resin, and bisphenol novolak; polyvinylphenol; polyfunctional phenol resin such as triphenolmethane type phenol resin.
  • Modified phenolic resins such as terpene modified phenolic resin and dicyclopentadiene modified phenolic resin; aralkyl type phenolic resins such as phenol aralkyl resin having phenylene skeleton and / or biphenylene skeleton, naphthol aralkyl resin having phenylene and / or biphenylene skeleton; Examples thereof include bisphenol compounds such as A and bisphenol F, and these may be used alone or in combination of two or more. Among these, it is more preferable to use polyfunctional phenol resin or aralkyl type phenol resin from the viewpoint of improving the curability of the mold underfill material for compression molding.
  • curing agent (B) in the mold underfill material for compression molding is 1 mass% or more with respect to the whole mold underfill material for compression molding, and it is 2 mass% or more. More preferably, it is more preferably 3% by mass or more.
  • curing agent (B) in the mold underfill material for compression molding is 25 mass% or less with respect to the whole mold underfill material for compression molding, and it is 15 mass% or less.
  • the constituent material of the inorganic filler (C) is not particularly limited, and examples thereof include silica such as fused silica and crystalline silica, alumina, silicon nitride, aluminum nitride, and the like, and any one or more of these can be used. .
  • silica such as fused silica and crystalline silica, alumina, silicon nitride, aluminum nitride, and the like, and any one or more of these can be used.
  • silica such as fused silica and crystalline silica, alumina, silicon nitride, aluminum nitride, and the like, and any one or more of these can be used.
  • the inorganic filler (C) is preferably spherical, and more preferably spherical silica.
  • the inorganic filler (C) has a particle size R max of 8 ⁇ m or more and 35 ⁇ m or less with a cumulative frequency of 5% when viewed from the maximum particle size side of the volume-based particle size distribution.
  • the dispersibility of an inorganic filler (C) can be improved and ash content uniformity can be improved effectively.
  • liquidity of the mold underfill material for compression molding can also be improved.
  • the particle size R max is more preferably 10 ⁇ m or more and 25 ⁇ m or less, and particularly preferably 11 ⁇ m or more and 23 ⁇ m or less.
  • the inorganic filler (C) preferably has a mode diameter R of 1 ⁇ m or more and 24 ⁇ m or less, preferably 3 ⁇ m or more and 24 ⁇ m or less, where the particle diameter corresponding to the maximum peak of the volume-based particle size distribution is the mode diameter R. More preferably, it is 4.5 ⁇ m or more and 24 ⁇ m or less.
  • the inorganic filler (C) preferably has an R / R max of 0.4 or more. Is more preferably larger than .50, particularly preferably 0.52 or more. In addition, it is preferable that an inorganic filler (C) satisfy
  • the frequency of particles having a mode diameter R is preferably 3.5% or more and 15% or less, and more preferably 4% or more and 10% or less. It is particularly preferably 4.5% or more and 9% or less.
  • similar to the mode diameter R or the mode diameter R can be made high. For this reason, about the mold underfill material for compression molding, the balance of fluidity
  • the frequency of particles having a particle size of 0.8 ⁇ R or more and 1.2 ⁇ R or less is preferably 10% or more and 60% or less, It is more preferably 12% or more and 50% or less, and particularly preferably 15% or more and 45% or less.
  • the ratio of particles having a mode diameter R or a particle diameter close to the mode diameter R can be reliably increased. For this reason, about the mold underfill material for compression molding, the balance of fluidity
  • the frequency of particles having a particle size of 0.5 ⁇ R or less is preferably 5% or more and 50% or less.
  • the particle size distribution of the inorganic filler (C) can be adjusted, for example, by classifying the raw material particles using a sieve, a cyclone (air classification) or the like.
  • the particle size distribution in the inorganic filler (C) such as the particle size R max and the mode diameter R can be measured using, for example, a laser diffraction scattering type particle size distribution analyzer SALD-7000 manufactured by Shimadzu Corporation. .
  • the content of the inorganic filler (C) in the compression molding mold underfill material is preferably 50% by mass or more, and preferably 60% by mass or more with respect to the entire compression molding mold underfill material. It is more preferable that By setting the content of the inorganic filler (C) to the above lower limit value or more, low moisture absorption and low thermal expansion can be improved, and moisture resistance reliability and reflow resistance of the semiconductor package can be more effectively improved. .
  • the content of the inorganic filler (C) in the mold underfill material for compression molding is preferably 93% by mass or less and 91% by mass or less with respect to the entire mold underfill material for compression molding. It is more preferable. By setting the content of the inorganic filler (C) to be equal to or less than the above upper limit value, it is possible to more effectively improve the fluidity and filling property during compression molding of the mold underfill material for compression molding.
  • the mold underfill material for compression molding can further contain, for example, a curing accelerator (D).
  • the curing accelerator (D) may be any one that promotes the crosslinking reaction between the epoxy group of the epoxy resin (A) and the curing agent (B) (for example, the phenolic hydroxyl group of the phenol resin curing agent), For example, what is used for a general epoxy resin composition for sealing can be used.
  • Examples of the curing accelerator (D) include phosphorus atom-containing compounds such as organic phosphines, tetra-substituted phosphonium compounds, phosphobetaine compounds, adducts of phosphine compounds and quinone compounds, adducts of phosphonium compounds and silane compounds; Amidines and tertiary amines exemplified by 8-diazabicyclo (5,4,0) undecene-7, benzyldimethylamine, 2-methylimidazole and the like, and nitrogen atom-containing compounds such as amidines and quaternary salts of amines, etc. These may be used alone or in combination of two or more.
  • a phosphorus atom-containing compound from the viewpoint of improving curability.
  • it has latent properties such as tetra-substituted phosphonium compounds, phosphobetaine compounds, adducts of phosphine compounds and quinone compounds, and adducts of phosphonium compounds and silane compounds.
  • a curing accelerator it is particularly preferable to use an adduct of a phosphine compound and a quinone compound or an adduct of a phosphonium compound and a silane compound.
  • organic phosphines and nitrogen atom-containing compounds can also be used suitably.
  • Examples of the organic phosphine used as the curing accelerator (D) include a first phosphine such as ethylphosphine and phenylphosphine; a second phosphine such as dimethylphosphine and diphenylphosphine; trimethylphosphine, triethylphosphine, tributylphosphine, triphenylphosphine, and the like. Of the third phosphine.
  • Examples of the tetra-substituted phosphonium compound used as the curing accelerator (D) include a compound represented by the following general formula (4).
  • P represents a phosphorus atom
  • R1, R2, R3, and R4 each independently represents an aromatic group or an alkyl group
  • A is selected from a hydroxyl group, a carboxyl group, and a thiol group.
  • AH is an aromatic having at least one functional group selected from a hydroxyl group, a carboxyl group, and a thiol group in the aromatic ring
  • x and y are numbers from 1 to 3
  • the compound represented by the general formula (4) is obtained, for example, as follows, but is not limited thereto. First, a tetra-substituted phosphonium halide, an aromatic organic acid and a base are mixed in an organic solvent and mixed uniformly to generate an aromatic organic acid anion in the solution system. Next, when water is added, the compound represented by the general formula (4) can be precipitated.
  • R1, R2, R3, and R4 bonded to the phosphorus atom are phenyl groups and AH is bonded to the phosphorus atom from the viewpoint of excellent balance between the yield during synthesis and the curing acceleration effect.
  • a compound having a hydroxyl group in an aromatic ring that is, a phenol compound
  • A is preferably an anion of the phenol compound.
  • the phenol compounds are monocyclic phenol, cresol, catechol, resorcin, condensed polycyclic naphthol, dihydroxynaphthalene, (polycyclic) bisphenol A, bisphenol F, bisphenol S, biphenol having a plurality of aromatic rings. , Phenylphenol, phenol novolac and the like, and among these, phenol compounds having two hydroxyl groups are preferably used.
  • Examples of the phosphobetaine compound used as the curing accelerator (D) include a compound represented by the following general formula (5).
  • X1 represents an alkyl group having 1 to 3 carbon atoms
  • Y1 represents a hydroxyl group
  • a is an integer of 0 to 5
  • b is an integer of 0 to 4
  • the compound represented by the general formula (5) is not particularly limited.
  • a triaromatic substituted phosphine that is a third phosphine is brought into contact with a diazonium salt, and the triaromatic substituted phosphine and the diazonium group of the diazonium salt are brought into contact. It can be obtained through a substitution step.
  • Examples of the adduct of the phosphine compound and the quinone compound used as the curing accelerator (D) include compounds represented by the following general formula (6).
  • P represents a phosphorus atom
  • R5, R6 and R7 each independently represent an alkyl group having 1 to 12 carbon atoms or an aryl group having 6 to 12 carbon atoms
  • R8, R9 And R10 each independently represent a hydrogen atom or a hydrocarbon group having 1 to 12 carbon atoms, and R8 and R9 may be bonded to each other to form a ring
  • Examples of the phosphine compound used as an adduct of a phosphine compound and a quinone compound include an aromatic ring such as triphenylphosphine, tris (alkylphenyl) phosphine, tris (alkoxyphenyl) phosphine, trinaphthylphosphine, and tris (benzyl) phosphine.
  • aromatic ring such as triphenylphosphine, tris (alkylphenyl) phosphine, tris (alkoxyphenyl) phosphine, trinaphthylphosphine, and tris (benzyl) phosphine.
  • Those having a substituent or a substituent such as an alkyl group and an alkoxyl group are preferred, and examples of the substituent such as an alkyl group and an alkoxyl group include those having 1 to 6 carbon atoms. From the viewpoint of availability, triphenyl
  • Examples of the quinone compound used for the adduct of a phosphine compound and a quinone compound include o-benzoquinone, p-benzoquinone, and anthraquinones. Among these, p-benzoquinone is preferable from the viewpoint of storage stability.
  • the adduct of the phosphine compound and the quinone compound is not particularly limited, and can be obtained, for example, by contacting and mixing them in a solvent in which both the organic tertiary phosphine and the benzoquinones can be dissolved.
  • the solvent is preferably a ketone such as acetone or methyl ethyl ketone, which has low solubility in the adduct.
  • R5, R6 and R7 bonded to the phosphorus atom are phenyl groups, and R8, R9 and R10 are hydrogen atoms, that is, 1,4-benzoquinone and triphenyl
  • R5, R6 and R7 bonded to the phosphorus atom are phenyl groups
  • R8, R9 and R10 are hydrogen atoms, that is, 1,4-benzoquinone and triphenyl
  • a compound to which phosphine has been added is preferable in that it reduces the thermal elastic modulus of the cured mold underfill material for compression molding.
  • Examples of the adduct of a phosphonium compound and a silane compound used as the curing accelerator (D) include compounds represented by the following formula (7).
  • P represents a phosphorus atom and Si represents a silicon atom.
  • R11, R12, R13 and R14 are each independently an organic group having an aromatic ring or a heterocyclic ring, or an aliphatic group.
  • X2 is an organic group bonded to the groups Y2 and Y3
  • X3 is an organic group bonded to the groups Y4 and Y5
  • Y2 and Y3 are groups formed by releasing a proton from a proton donating group.
  • Y2 and Y3 in the same molecule are bonded to a silicon atom to form a chelate structure
  • Y4 and Y5 represent a group formed by releasing a proton from a proton-donating group.
  • Y4 and Y5 of this group are bonded to a silicon atom to form a chelate structure
  • X2 and X3 may be the same as or different from each other
  • Y2, Y3, Y4, and Y5 are May be different even one .
  • Z1 is an organic group or an aliphatic group, an aromatic ring or a heterocyclic ring
  • R11, R12, R13 and R14 are, for example, phenyl group, methylphenyl group, methoxyphenyl group, hydroxyphenyl group, naphthyl group, hydroxynaphthyl group, benzyl group, methyl group, ethyl group, n -Butyl group, n-octyl group, cyclohexyl group and the like.
  • aromatic groups having a substituent such as phenyl group, methylphenyl group, methoxyphenyl group, hydroxyphenyl group, hydroxynaphthyl group or unsubstituted
  • the aromatic group is more preferable.
  • X2 is an organic group that binds to Y2 and Y3.
  • X3 is an organic group that binds to groups Y4 and Y5.
  • Y2 and Y3 are groups formed by proton-donating groups releasing protons, and groups Y2 and Y3 in the same molecule are combined with a silicon atom to form a chelate structure.
  • Y4 and Y5 are groups formed by proton-donating groups releasing protons, and groups Y4 and Y5 in the same molecule are combined with a silicon atom to form a chelate structure.
  • the groups X2 and X3 may be the same or different from each other, and the groups Y2, Y3, Y4, and Y5 may be the same or different from each other.
  • the groups represented by -Y2-X2-Y3- and -Y4-X3-Y5- in general formula (7) are composed of groups in which a proton donor releases two protons. Is.
  • the proton donor is preferably an organic acid having at least two carboxyl groups or hydroxyl groups in the molecule, more preferably an aromatic compound having at least two carboxyl groups or hydroxyl groups on the carbon constituting the aromatic ring, Is more preferably an aromatic compound having at least two hydroxyl groups on adjacent carbons constituting the aromatic ring.
  • catechol pyrogallol, 1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, 2,2′-biphenol, 1,1′-bi-2-naphthol, salicylic acid, 1-hydroxy-2-naphthoic acid, 3 -Hydroxy-2-naphthoic acid, chloranilic acid, tannic acid, 2-hydroxybenzyl alcohol, 1,2-cyclohexanediol, 1,2-propanediol, glycerin and the like.
  • catechol, 1,2-dihydroxynaphthalene, and 2,3-dihydroxynaphthalene are more preferable from the viewpoint of easy availability of raw materials and a curing acceleration effect.
  • Z1 in the general formula (7) represents an organic group having an aromatic ring or a heterocyclic ring, or an aliphatic group.
  • Specific examples thereof include a methyl group, an ethyl group, a propyl group, a butyl group, Aliphatic hydrocarbon groups such as hexyl group and octyl group, aromatic hydrocarbon groups such as phenyl group, benzyl group, naphthyl group and biphenyl group, glycidyloxypropyl group, mercaptopropyl group, aminopropyl group and vinyl group And reactive substituents.
  • a methyl group, an ethyl group, a phenyl group, a naphthyl group, and a biphenyl group are more preferable from the viewpoint of thermal stability.
  • the manufacturing method of the adduct of a phosphonium compound and a silane compound is not specifically limited, For example, it can carry out as follows. First, a silane compound such as phenyltrimethoxysilane and a proton donor such as 2,3-dihydroxynaphthalene are added and dissolved in a flask containing methanol, and then a sodium methoxide-methanol solution is added dropwise with stirring at room temperature. Further, when a solution prepared by dissolving a tetra-substituted phosphonium halide such as tetraphenylphosphonium bromide in methanol in methanol is added dropwise with stirring at room temperature, crystals are precipitated. The precipitated crystals are filtered, washed with water, and vacuum dried to obtain an adduct of a phosphonium compound and a silane compound.
  • a silane compound such as phenyltrimethoxysilane and a proton donor such as
  • the content of the curing accelerator (D) in the compression molding mold underfill material is preferably 0.05% by mass or more based on the whole compression molding mold underfill material.
  • the content is more preferably 1% by mass or more, and particularly preferably 0.15% by mass or more.
  • the content of the hardening accelerator (D) in the mold underfill material for compression molding is preferably 1% by mass or less, and 0.5% by mass or less, based on the entire mold underfill material for compression molding. It is more preferable that By making content of a hardening accelerator (D) below the said upper limit, the fluidity
  • the mold underfill material for compression molding can further contain, for example, a coupling agent (E).
  • a coupling agent (E) examples include epoxy silane, mercapto silane, amino silane, alkyl silane, ureido silane, vinyl silane, methacryl silane and other various silane compounds, titanium compounds, aluminum chelates, aluminum / zirconium compounds, and the like.
  • a known coupling agent can be used.
  • Examples include vinyltrichlorosilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris ( ⁇ -methoxyethoxy) silane, ⁇ -methacryloxypropyltrimethoxysilane, ⁇ - (3,4-epoxycyclohexyl) ethyltrimethoxy.
  • silane compounds such as epoxy silane, mercapto silane, amino silane, alkyl silane, ureido silane, or vinyl silane are more preferable. From the viewpoint of more effectively improving the filling property and moldability, it is particularly preferable to use a secondary aminosilane represented by N-phenyl- ⁇ -aminopropyltrimethoxysilane.
  • the content of the coupling agent (E) in the compression molding mold underfill material is preferably 0.1% by mass or more based on the entire compression molding mold underfill material. More preferably, it is 15 mass% or more.
  • the content of a coupling agent (E) in the mold underfill material for compression molding is preferably 1% by mass or less, and 0.5% by mass or less based on the entire mold underfill material for compression molding. It is more preferable that By making content of a coupling agent (E) below the said upper limit, the fluidity
  • ion scavengers such as hydrotalcite; colorants such as carbon black and bengara; low stress components such as silicone rubber; natural waxes such as carnauba wax; Synthetic waxes such as acid ester waxes, mold release agents such as higher fatty acids such as zinc stearate and its metal salts or paraffin; flame retardants such as aluminum hydroxide, magnesium hydroxide, zinc borate, zinc molybdate, phosphazene; oxidation You may mix
  • the mold underfill material for compression molding in the present embodiment can be made into a granular material by mixing and kneading the above components and then combining various methods such as pulverization, granulation, extrusion cutting and sieving alone or in combination. it can.
  • each raw material component is premixed with a mixer, and this is heated and kneaded by a kneader such as a roll, a kneader or an extruder, and then a cylindrical outer peripheral portion having a plurality of small holes and a disk
  • a resin composition melted and kneaded is supplied to the inside of a rotor constituted by a bottom of the shape, and the resin composition is obtained by passing through small holes by centrifugal force obtained by rotating the rotor (centrifugal Milling method); after kneading in the same manner as above, cooling and crushing to obtain a pulverized product by removing coarse particles and fine powder using a sieve (pulverization sieving method); each raw material After the components are premixed with a mixer, the mixture is heated and kneaded using an extruder equipped with a die with a plurality of small diameters at the tip of the screw
  • Resin is almost parallel to the die surface Methods that may be cut by a cutter to slide and rotate (hereinafter, also referred to as "hot cut method”.), And the like.
  • a compression molding mold underfill material having a desired particle size distribution can be obtained by selecting kneading conditions, centrifugal conditions, sieving conditions, cutting conditions, and the like.
  • FIG. 1 is a cross-sectional view showing a semiconductor package 100 according to this embodiment.
  • the semiconductor package 100 includes a substrate 10, a semiconductor element 20, and a sealing material 30.
  • the semiconductor element 20 is disposed on the substrate 10.
  • FIG. 1 illustrates a case where the semiconductor element 20 is flip-chip mounted on the substrate 10 via the bumps 22.
  • the sealing material 30 seals the semiconductor element 20 and fills the gap 24 between the substrate 10 and the semiconductor element 20.
  • the sealing material 30 is obtained by molding the above-described compression molding mold underfill material using a compression molding method. In this case, it is possible to fill the gap 24 while sealing the semiconductor element 20 using a compression molding mold underfill material having excellent filling properties, and to realize the semiconductor package 100 having excellent reliability. It becomes possible.
  • the semiconductor package 100 is manufactured as follows, for example. First, the semiconductor element 20 is disposed on the substrate 10 via the bumps 22. Next, using the compression molding method, the semiconductor element 20 is sealed and the gap 24 between the substrate 10 and the semiconductor element 20 is filled with the above-described compression molding mold underfill material according to the present embodiment. Thereby, the sealing material 30 is formed.
  • the compression molding method can be performed using, for example, a compression molding machine under conditions of a mold temperature of 120 to 185 ° C., a molding pressure of 1 to 12 MPa, and a curing time of 60 seconds to 15 minutes.
  • FIG. 2 is a cross-sectional view showing the structure 102 according to the present embodiment.
  • the structure 102 is a molded product formed by MAP molding. For this reason, a plurality of semiconductor packages are obtained by dividing the structure 102 into individual semiconductor elements.
  • the structure 102 includes a substrate 10, a plurality of semiconductor elements 20, and a sealing material 30.
  • the plurality of semiconductor elements 20 are disposed on the substrate 10.
  • FIG. 2 illustrates a case where each semiconductor element 20 is flip-chip mounted on the substrate 10 via the bumps 22.
  • the sealing material 30 seals the plurality of semiconductor elements 20 and fills the gaps 24 between the substrate 10 and the respective semiconductor elements 20.
  • the sealing material 30 is obtained by molding the above-described compression molding mold underfill material using a compression molding method. In this case, each gap 24 can be filled while sealing each semiconductor element 20 using a compression molding mold underfill material having excellent filling properties.
  • the structure 102 is manufactured as follows, for example. First, a plurality of semiconductor elements 20 are arranged on the substrate 10. Each semiconductor element 20 is mounted on the substrate 10 through bumps 22, for example. Next, using a compression molding method, the plurality of semiconductor elements 20 are sealed with the compression molding mold underfill material according to the above-described embodiment, and the gaps 24 between the substrate 10 and the respective semiconductor elements 20 are formed. Fill. Thereby, the sealing material 30 is formed.
  • the compression molding method can be performed using, for example, a compression molding machine under conditions of a mold temperature of 120 to 185 ° C., a molding pressure of 1 to 12 MPa, and a curing time of 60 seconds to 15 minutes.
  • Epoxy resin 1 Phenol aralkyl type epoxy resin having a biphenylene skeleton (manufactured by Nippon Kayaku Co., Ltd., NC-3000)
  • Epoxy resin 2 biphenyl type epoxy resin (manufactured by Mitsubishi Chemical Corporation, YX-4000)
  • Curing agent 1 Phenol aralkyl resin having a biphenylene skeleton (manufactured by Nippon Kayaku Co., Ltd., GPH-65)
  • Curing agent 2 Triphenol methane type phenol resin (Maywa Kasei Co., Ltd., MEH-7500)
  • Curing accelerator 1 Compound curing accelerator represented by the following formula (8) 2: Compound curing accelerator represented by the following formula (9) 3: Triphenylphosphine
  • Coupling agent 1 ⁇ -glycidoxypropyltrimethoxysilane (GPS-M manufactured by Chisso Corporation)
  • Coupling agent 2 N-phenyl- ⁇ -aminopropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-573)
  • the flip chip type MAPBGA was used for transfer molding using a transfer molding machine (TOWA Co., Ltd., Y series) at a mold temperature of 175 ° C., an injection pressure of 6.9 MPa, and a curing time of 90 seconds. Molded with mold underfill material. Next, the filling property of the mold underfill material in the gap between the molded substrate and the chip was observed using an ultrasonic flaw detector (manufactured by Hitachi Construction Machinery Co., Ltd., FS300). In Table 1, when there was no gap between the substrate and the chip and the mold underfill material was filled, it was evaluated as ⁇ , and when it was detected that there was no filling between the substrate and the chip, it was evaluated as x. .
  • Table 1 shows the results when the gap between the substrate and the chip is 70 ⁇ m, and when the gap between the substrate and the chip is 30 ⁇ m.
  • ash content uniformity About each Example and each comparative example, the ash content uniformity was evaluated as follows. First, a flip chip type MAPBGA was prepared in the same manner as in the above-mentioned filling property evaluation except that the substrate was changed to a metal plate of the same size and a release agent was applied thinly on the surface of the metal plate. Next, a flip chip type MAPBGA was sealed and molded using a mold underfill material under the same conditions using the same molding machine as that used for the above-described filling property evaluation. Next, the resin parts on the two long sides of the obtained molded product were cut out 5 mm from the outer edge, members other than the resin were removed and freeze-pulverized, and two samples corresponding to the two long sides were obtained. .
  • each sample was heated to 500 ° C. using a differential thermobalance at a temperature rising rate of 30 ° C./min, held for 30 minutes, and the weight of the residue was measured. This measurement was repeated three times.
  • the value obtained by dividing the weight of the residue after three measurements by the original weight was defined as ash (mass%).
  • ash content uniformity was evaluated by the value which remove
  • Example 1 the filling properties were all good. Among these, Examples 1 to 5 showed better ash uniformity compared to Examples 6 and 7.
  • Comparative Examples 1 and 2 the filling property under the chip was not sufficient when MAP molding was performed by the compression molding method. In Comparative Example 3, curability of the mold underfill material in a large-area MAP molded product was not sufficient, and swelling occurred.
  • Comparative Example 4 in which MAP molding was performed by transfer molding, it was found that the filling property under the chip having a narrow gap was not sufficient. Moreover, in the comparative example 4, it turns out that the ash uniformity in large-area MAP shaping
  • the present invention has a remarkable effect particularly in the filling ability and the ash content under the chip, which is a narrow gap, as compared with the conventional transfer molding. all right.

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PCT/JP2015/058670 2015-03-23 2015-03-23 圧縮成形用モールドアンダーフィル材料、半導体パッケージ、構造体および半導体パッケージの製造方法 WO2016151717A1 (ja)

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