WO2016112766A1 - 氮化物发光二极管 - Google Patents

氮化物发光二极管 Download PDF

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WO2016112766A1
WO2016112766A1 PCT/CN2015/097563 CN2015097563W WO2016112766A1 WO 2016112766 A1 WO2016112766 A1 WO 2016112766A1 CN 2015097563 W CN2015097563 W CN 2015097563W WO 2016112766 A1 WO2016112766 A1 WO 2016112766A1
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layer
emitting diode
light emitting
well
nitride
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PCT/CN2015/097563
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English (en)
French (fr)
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郑锦坚
寻飞林
李志明
邓和清
杜伟华
徐宸科
伍明跃
周启伦
林峰
李水清
康俊勇
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厦门市三安光电科技有限公司
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Publication of WO2016112766A1 publication Critical patent/WO2016112766A1/zh
Priority to US15/424,765 priority Critical patent/US20170148948A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure

Definitions

  • the present invention relates to the field of semiconductor materials, and more particularly to a nitride light emitting diode.
  • GaN-based light-emitting diodes are widely used in daily life. Compared with conventional light sources, LEDs have long life, high light efficiency, low energy consumption, and small size, which is an important trend in the development of modern lighting.
  • MQW Wells, abbreviated as MQW
  • the mobility of electrons is faster than that of holes
  • the concentration of free electrons is higher than the concentration of free holes, which tends to cause uneven distribution of electrons and holes in MQW
  • electron concentration is n-type.
  • a high-A1 component AlGaN (A1 component is generally 0.2-0.5) electron blocking layer is generally used to block electron overflow, and a high A1 component can restrict part of electrons from overflowing to a P-type layer.
  • A1 component is generally 0.2-0.5
  • the ionization energy of Mg increases rapidly and the crystal quality decreases remarkably, resulting in a sharp drop in the efficiency and concentration of hole ionization, which in turn causes a decrease in brightness and efficiency.
  • the AlGaN EBL structure with high A1 component still has a large amount of electrons overflowing into the P-type layer, causing problems such as Effect droop effect, aging and light decay.
  • the present invention provides a nitride light emitting diode in which an AlGaN electron tunneling layer is interposed in at least one well layer close to an n-type nitride layer, so that a well layer and an AlGaN intercalation layer are formed higher. Barrier difference, it is difficult for electrons to use thermal electron emission to jump between the intervening layers of the well layer.
  • the way of wearing makes a transition, which can limit the migration rate of electrons and adjust the distribution of electrons, reduce the probability of electrons spilling over the P-type nitride layer, improve luminous efficiency and reduce Efficiency dro 0 p.
  • the technical solution of the present invention is: a nitride light emitting diode, comprising: an n-type nitride layer, a light-emitting layer, and a p-type nitride layer, wherein the light-emitting layer is a multiple quantum well structure composed of a barrier layer and a well layer, Wherein an AlGaN electron tunneling layer is interposed in at least one well layer adjacent to the n-type nitride layer, a barrier height thereof is greater than a barrier height of the barrier layer, and a potential of the well layer and the AlGaN electron tunneling layer
  • the barrier is sufficiently high that the electrons are more difficult to transition in the direction of the hot electron emission, and the transition is mainly performed in the well layer of InGaN by tunneling, thereby limiting the electron migration rate and regulating the distribution of electrons, and reducing the electron overflow to the p-type nitride. The probability of the layer.
  • the barrier layer is a GaN layer
  • the well layer is InGaN.
  • the A1G aN electron tunneling layer is interposed in a well layer of the quantum layer adjacent to the n-type nitride layer, wherein 20>M ⁇ 1.
  • a single layer or a plurality of layers are inserted into the well layer of the quantum well in the front side of the light-emitting layer close to the n-type nitride layer.
  • the period of the electron tunneling layer is 2 pairs.
  • the range of the A1 component X in the AlGaN electron tunneling layer is: l>x ⁇ 0.3.
  • the AlGaN electron tunneling layer has a thickness of 1 angstrom to 50 angstroms.
  • the AlGaN electron tunneling layer has Si impurity, and its impurity concentration is 1.0 ⁇ 10 19 ⁇ 2.0 ⁇ 10 , which is high in Si to reduce the resistance.
  • the Si miscellaneous may be cumbersome on average, or may be non-uniform and miscellaneous, such as using delta.
  • the nitride light emitting diode further includes a p-type Al x In y G ai — x — y
  • the AlGaN electron tunneling layer is used to reduce the concentration and migration rate of electrons at the front end of the multiple quantum well.
  • an electron blocking layer lower than the lower A1 component of the conventional LED can be used, thereby increasing the Mg impurity concentration and ionization efficiency of the P-type Al x In y G ai — x — y N layer, and improving the hole injection efficiency. And luminous efficiency.
  • the p-type Al x In y G ai — x — y N electron blocking layer has a poor Mg concentration of 5 ⁇ 10 18 to 5 ⁇ 10 2 ⁇ , preferably 5 ⁇ 10 19 .
  • the light-emitting region of the present invention has an AlGaN electron tunneling layer inserted in the well layer of the MQW front end (near one end of the n-type nitride layer), since the A1 composition X is high (preferably, x ⁇ 0.3), the well layer
  • the potential difference between AlGaN and AlGaN is very large. It is difficult for electrons to jump beyond the barrier by thermal electron emission, but mainly through tunneling.
  • the function of the AlGaN electron tunneling layer such as the speed bump, can reduce the current under high current.
  • the electron migration rate reduces the probability of electrons overflowing into the P-type layer, improves the hole injection efficiency and the electron-hole recombination efficiency, thereby improving the luminous efficiency and reducing the efficiency drooping effect.
  • the layer is forced to move laterally, which can improve the lateral expansion capability of the electron, improve the current uniformity in the plane, reduce the current concentration of the electrode and the current concentration at the edge of the chip is low, improve the uniformity of current and brightness in the LED surface, and improve its Antistatic breakdown ESD capability.
  • FIG. 1 is a band gap distribution diagram of MQW and EBL of a conventional nitride light-emitting diode using a high Al-component AlGaN electron blocking layer.
  • FIG. 2 is a side cross-sectional view of a nitride light emitting diode in accordance with an embodiment of the present invention.
  • FIG. 3 is a partial enlarged view of a light emitting region of the nitride light emitting diode shown in FIG. 2.
  • FIG. 4 is a band gap distribution diagram of MQW and EBL of a nitride light emitting diode according to an embodiment of the present invention.
  • FIG. 5 illustrates a manner of movement of electrons through a quantum well in a nitride light emitting diode in accordance with an implementation of the present invention.
  • FIG. 6 is a band gap distribution diagram of a local quantum well of another nitride light emitting diode according to an embodiment of the present invention.
  • 7 is a comparison diagram of a light emitting output power of a nitride light emitting diode according to an embodiment of the present invention and a light emitting output function of the conventional light emitting diode shown in FIG. 1.
  • FIG. 8 is a graph comparing the external quantum efficiency of a nitride light emitting diode according to an embodiment of the present invention with the external quantum efficiency of the conventional light emitting diode shown in FIG. 1.
  • 101 a substrate; 102: a buffer layer; 103: an n-type nitride layer; 104a: a front M pair quantum well; 104b: a rear n pair of quantum wells; 105: a p-type electron blocking layer; 106: p-type nitrogen Gallium layer; 107: p-type contact layer; 10 4a- 1: GaN barrier layer; 104a-2: InGaN well layer; 104a-3: AlGaN electron tunneling layer; 104a-4: In GaN well layer; 104a-5 : AlGaN electron tunneling layer, 104a-6: InGaN well layer; 104a-7 GaN barrier layer.
  • a nitride light emitting diode comprising: a substrate 101, a buffer layer 102, an n-type nitride layer 103, a light emitting layer 104, a P-type electron blocking layer 105, The p-type gallium nitride layer 106 and the p-type contact layer 107.
  • the substrate 101 preferably uses a sapphire substrate, and may also be a gallium nitride substrate, a silicon substrate or other substrate;
  • the buffer layer 102 is a m-based nitride-based material, preferably gallium nitride, or nitrogen.
  • the aluminum nitride material or the aluminum gallium nitride material; the n-type nitride layer 103 is preferably gallium nitride, or an aluminum gallium nitride material, and the silicon concentration is preferably 1 ⁇ 10 im ⁇ 3 ;
  • the light-emitting layer 104 is a multi-quantum well structure. Preferably, it has a 5 ⁇ 50 pairs of quantum wells; the p-type electron blocking layer 105 is adjacent to the light-emitting layer 104 for blocking electrons from entering the p-type layer and cavity recombination, preferably using P-type Al Jn y Ga , x _ y
  • the p-type gallium nitride layer 106 is made of magnesium, and the impurity concentration is 1x10 1 9 ⁇ 5x10 21 cm 3 , and the thickness is preferably 100 nm. Between 800 nm; the thickness of the p-type contact layer 107 is preferably between 5 nm and 20 nm.
  • the luminescent layer 104 will be described in detail below with reference to FIGS. Specifically, the luminescent layer 104 adopts an InGaN/Ga N multiple quantum well structure, wherein the logarithm of the quantum well is preferably 14 pairs or more.
  • the multiple quantum well structure is divided into the front M pair quantum well 104a and the rear N.
  • the front M-pair quantum well 104a is adjacent to the n-type nitride layer 103, and the well layer is interposed with an AlGaN electron tunneling layer
  • the rear N-pair quantum well 104b is adjacent to the p-type electron blocking layer 105, wherein M and N are compared.
  • the preferred range of values is as follows: 1 ⁇ M ⁇ 20, 8 ⁇ N ⁇ 50, in a preferred implementation In the example, M can take 4, and N can take 10.
  • the first M pairs of inserted quantum well structures are shown, including a GaN barrier layer 104a-1, an InGaN well layer 104a-2, an AlGaN electron tunneling layer 104a-3, and an InGaN well layer 104a-4.
  • the AlGaN electron tunneling layers 104a-3 and 104a-5 have a higher barrier (greater than the barrier of the GaN barrier layer 104a-1), so a higher A1 component is required, and a preferred A1 component X is taken.
  • the value range is: l>x ⁇ 0.3.
  • X may be 0.3; to ensure the lattice of the quantum well, preferably, the AlGaN electron tunneling layer adopts a thin layer structure with a thickness of 1 angstrom ⁇ Preferably, 50 angstroms, preferably 10 angstroms; in some preferred embodiments, the AlGaN electron tunneling layers 104a-3 and 104a-5 are Si miscellaneous, having a heterodyne concentration of 1.0 x 10 19 ⁇ 2.0 x 10 20 , which may be average Miscellaneous, can also be non-uniform and miscellaneous (such as the use of delta miscellaneous), the higher the S seems to reduce the resistance, taking the uniform miscellaneous as an example, the preferred Si miscellaneous concentration is 1.5x10 19 .
  • FIG. 4 shows a band gap distribution of MQW and EBL of a nitride light emitting diode according to an embodiment of the present invention. It can be seen from the figure that in the well M layer of the quantum well, a higher band gap AlGaN electron tunneling layer is inserted, and the electrons jump beyond the barrier height or tunneling of the AlGaN to break down due to the InGaN well and The barrier height between the AlGaN electron tunneling layers is very large, and the probability that electrons can be emitted from the barrier by the probability of electron emission can be achieved by controlling the A1 component and changing the height of the barrier.
  • the probability can be controlled by controlling the thickness of the AlGaN insertion layer, which can effectively and accurately control the distribution of the electron wave function, maximize the composite probability of electron and hole wave functions in the luminescent MQW quantum well region, and efficiently improve the luminous efficiency. And brightness.
  • FIG. 5 shows a manner of movement of electrons through a quantum well in a nitride light emitting diode according to an embodiment of the present invention.
  • an AlGaN electron tunneling layer 104a having a high barrier E1 is inserted in the well layer.
  • -3 and 104a -5 electrons are difficult to transition through El, but are forced to tunnel, and finally transition to the next quantum well by thermal electron emission over the barrier E 2 to reduce electron migration. Improve the uniformity of electron distribution in MQW.
  • the AlGaN layer is inserted in the front well layer of the MQW, the mobility of electrons and the distribution of electrons in the luminescent quantum well region can be controlled, and the same Al1 electron blocking layer of the lower A1 composition can be used after MQW to achieve the same The electron blocking effect. Therefore, in some preferred embodiments, a lower Al composition of p-type AlGaN is used as the electron blocking layer 105, wherein the A1 composition X preferably has a value of: 0.2>x>0 (preferably 0.1). Due to mining With AlGaN having a lower Al composition, the Mg concentration and the ionization efficiency in the electron blocking layer can be increased, the hole concentration can be increased, and the resistance of the electron blocking layer can be lowered. In a preferred embodiment, the p-type AlGaN electron blocking layer 105 has a poor Mg concentration of 5x10 18 ⁇ 5x10, preferably 5x10 19 .
  • a single-layer or multi-layer AlGaN electron tunneling layer may be inserted in the well layer of the quantum well 104a in the front surface of the light-emitting layer.
  • a double-layer AlGaN electron layer is inserted in the well layer.
  • Sample 1 and Sample 2 use the same substrate, buffer layer, n-type nitride layer, p-type gallium nitride layer, and p-type contact layer (refer to the foregoing description of each layer for details), sample one
  • the luminescent layer uses 14 pairs of InGaN/GaN quantum well structures, in which a 10 angstrom thick Si-AlGaN layer is implanted in the first 4 pairs of well layers (A1 composition is 0.3, Si impurity concentration is 1.5 ⁇ 10 19 ).
  • the p-type electron blocking layer uses p-type AlGaN with low A1 composition (0.1 composition of Al), and the luminescent layer of sample 2 uses 14 pairs of InGaN/GaN quantum well structures, and the structures of the pairs of quantum wells are the same, p-type
  • the electron blocking layer was made of a high A1 component of p-type A1G aN (Al composition of 0.4).
  • Figure 7 shows the luminescence output power versus forward current for the two samples.
  • Figure 8 shows the external quantum efficiency measured for the two samples at different currents to characterize the degree of Efficiency droop.
  • the electroluminescence intensity of the sample 1 is significantly higher than that of the conventional LED, especially under the current condition of a large current of 3000 mA, the luminous intensity of the sample 1 is more conventional.
  • the LED is boosted by about 50%.
  • Droop performance is significantly better than traditional LED, the external quantum efficiency with current attenuation is about 20 ⁇ lower than traditional LED
  • the invention can effectively improve the performance of Efficiency droop, reduce non-radiative recombination, and facilitate the use of LED under high current conditions.

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Abstract

公开了一种氮化物发光二极管。氮化物发光二极管依次包括：n型氮化物层、发光层、p型氮化物层，发光层为垒层和阱层构成的多量子阱结构，其中在靠近n型氮化物层的至少一个阱层内插入AlGaN电子隧穿层，其势垒高度大于垒层的势垒高度，AlGaN电子隧穿层与阱层的势垒足够高，使得电子较难以热电子发射方式跃迁，而主要以隧穿的方式在InGaN的阱层中进行跃迁，以限制电子的迁移速率和调节电子的分布，降低电子溢至p型氮化物层的机率。

Description

说明书 发明名称：氮化物发光二极管
技术领域
[0001] 本发明涉及半导体材料技术领域， 特别是一种氮化物发光二极管。
背景技术
[0002] GaN基发光二极管在日常生活中被广泛的应用， 与传统光源相比， LED具有 寿命长， 光效高， 能耗低， 体积小的优良特性， 是现代照明发展的一个重要趋 势。
[0003] 传统 GaN基 LED的发光层普遍使用 InGaN/GaN多量子阱 （Multiple Quantum
Wells , 简称 MQW) 结构， 一方面由于电子的迁移率较空穴快， 且自由电子的浓 度较自由空穴的浓度高， 容易导致 MQW中的电子和空穴分布不均匀， 电子集中 距 n型较近的 MQW层中， 而空穴集中在距 p型层较近的 MQW中， 往 n型方向逐渐 衰减不利于电子和空穴的复合； 另一方面， 由于电子浓度高、 迁移快， 导致电 子容易溢至 p型层中， 与离化的空穴在 p型层复合， 降低空穴的离化效率， 并产 生非辐射复合， 降低空穴的注入效率和引起效率骤降效应 （Efficiency Droop) 。 技术问题
[0004] 请参看附图 1， 目前一般采用高 A1组分 AlGaN (A1组分一般为 0.2~0.5) 电子阻 挡层来阻挡电子的溢出， 高 A1组分可限制部分电子溢出至 P型层， 但 AlGaN随着 A1组分的上升， Mg的离化能迅速升高和晶体质量会显著下降， 导致空穴离化效 率和浓度急剧下降， 进而引起亮度和效率的下降； 另外， 在大电流注入的条件 下， 高 A1组分的 AlGaN EBL结构仍有大量的电子会溢出至 P型层， 弓 |起 Efficiency droop效应、 老化和光衰等问题。
问题的解决方案
技术解决方案
[0005] 针对上述问题， 本发明提供了一种氮化物发光二极管， 其在靠近 n型氮化物层 的至少一个阱层内插入 AlGaN电子隧穿层， 使阱层与 AlGaN插入层形成较高的势 垒差， 电子很难采用热电子发射的方式在阱层的插入层间跃迁， 大部分采用隧 穿的方式进行跃迁， 从而可限制电子的迁移速率和调节电子的分布， 降低电子 溢至 P型氮化物层的机率， 提升发光效率和降低 Efficiency dro0p。
[0006] 本发明的技术方案为： 氮化物发光二极管， 依次包括： n型氮化物层， 发光层 、 p型氮化物层， 所述发光层为垒层和阱层构成的多量子阱结构， 其中在靠近 n 型氮化物层的至少一个阱层内插入 AlGaN电子隧穿层， 其势垒高度大于所述垒层 的势垒高度， 且所述阱层与所述 AlGaN电子隧穿层的势垒足够高， 使得电子较难 以热电子发射方向跃迁， 而主要以隧穿的方式在 InGaN的阱层中进行跃迁， 从而 限制电子的迁移速率和调节电子的分布， 降低电子溢至 p型氮化物层的机率。
[0007] 优选地， 所述垒层为 GaN层， 所述阱层为 InGaN。
[0008] 优选地， 在发光层靠近 n型氮化物层的前 M对量子阱的阱层内中间插入所述 A1G aN电子隧穿层， 其中 20〉M≥1。
[0009] 优选地， 在发光层靠近 n型氮化物层的前 M对量子阱的阱层内插入单层或多层 A
IGaN电子隧穿层。
[0010] 优选地， 电子隧穿层的周期为 2对。
[0011] 优选地， 所述 AlGaN电子隧穿层中 A1组分 X的取值范围为： l〉x≥0.3。
[0012] 优选地， 所述 AlGaN电子隧穿层的厚度为 1埃~50埃。
[0013] 优选地， 所述 AlGaN电子隧穿层具有 Si惨杂， 其杂浓度为 1.0x10 19 ~ 2.0x10 惨入较高的 Si以降低电阻。 在具体实施例中， 所述 Si惨杂可以为平均惨杂， 也可 以为非均匀惨杂， 如采用 delta惨杂。
[0014] 优选地， 所述氮化物发光二极管还包括一 p型 Al xIn yGa i— x— y
N电子阻挡层， 其中 0.2〉x〉0。 在高 A1组分 AlGaN材料中， Mg惨杂较难且激活 效率低， 而 Si惨杂相对 Mg容易， 因此采用 AlGaN电子隧穿层， 先在多量子阱前 端降低电子的浓度和迁移速率， 从而在 P型层可以使用较传统 LED较低 A1组分的 电子阻挡层， 从而增加 P型 Al xIn yGa i— x— yN层的 Mg惨杂浓度和离化效率， 提升空 穴注入效率和发光效率。 在一些实施例中， 所述 p型 Al xIn yGa i— x— yN电子阻挡层的 惨 Mg浓度为 5χ10 18 ~ 5χ10 2ΰ， 优选 5χ10 19。
发明的有益效果
有益效果 [0015] 本发明的发光区在 MQW前端 （靠近 n型氮化物层的一端） 阱层内插入 AlGaN电 子隧穿层， 由于 A1组分 X较高 （较佳的， x≥0.3) ， 阱层与 AlGaN间的势垒差很大 ， 电子较难通过热电子发射方式跃迁超过势垒， 而是主要通过隧穿方式运动， 该 AlGaN电子隧穿层的作用如减速带， 可降低大电流条件下的电子迁移速率， 减 少电子溢至 P型层的机率， 提升空穴注入效率和电子-空穴复合效率， 从而提升发 光效率和降低效率骤降 Efficiency droop效应。
[0016] 进一步地， 因 AlGaN势垒与阱层的势垒高度差异大， 电子难以热电子发射方式 跃过 AlGaN势垒， 除了采用电子隧穿方式的跃迁的电子外， 其余电子被限制在阱 层被迫进行横向迁移， 可提升电子横向扩展能力， 提升平面内的电流均匀性， 减少电极位置电流浓度高而芯片边缘电流浓度低的问题， 提升 LED面内电流和亮 度的均匀性， 改善其抗静电击穿 ESD能力。
[0017] 本发明的其它特征和优点将在随后的说明书中阐述， 并且， 部分地从说明书中 变得显而易见， 或者通过实施本发明而了解。 本发明的目的和其他优点可通过 在说明书、 权利要求书以及附图中所特别指出的结构来实现和获得。
对附图的简要说明
附图说明
[0018] 附图用来提供对本发明的进一步理解， 并且构成说明书的一部分， 与本发明的 实施例一起用于解释本发明， 并不构成对本发明的限制。 此外， 附图数据是描 述概要， 不是按比例绘制。
[0019] 图 1为传统采用高 A1组分 AlGaN电子阻挡层的氮化物发光二极管之 MQW与 EBL 的带隙分布图。
[0020] 图 2为根据本发明实施的一种氮化物发光二极管的侧面剖视图。
[0021] 图 3为图 2所示氮化物发光二极管发光区的局部放大图。
[0022] 图 4为根据本发明实施的一种氮化物发光二极管的 MQW与 EBL的带隙分布图。
[0023] 图 5显示了根据本发明实施的一种氮化物发光二极管中电子穿过量子阱的运动 方式。
[0024] 图 6为根据本发明实施的另一种氮化物发光二极管的局部量子阱的带隙分布图 [0025] 图 7为根据本发明实施的氮化物发光二极管的发光输出功率与图 1所示传统发光 二极管的发光输出功能的对比图。
[0026] 图 8为根据本发明实施的氮化物发光二极管的外量子效率与图 1所示传统发光二 极管的外量子效率的对比图。
[0027] 图示说明：
[0028] 101： 衬底； 102: 缓冲层； 103: n型氮化物层； 104a: 前 M对量子阱； 104b: 后 n对量子阱； 105: p型电子阻挡层； 106: p型氮化镓层； 107: p型接触层； 10 4a- 1： GaN垒层； 104a-2: InGaN阱层； 104a-3: AlGaN电子隧穿层； 104a-4: In GaN阱层； 104a-5: AlGaN电子隧穿层， 104a-6: InGaN阱层； 104a-7GaN垒层。 实施该发明的最佳实施例
本发明的最佳实施方式
[0029] 下面将结合实施例和附图对本发明的具体实施作详细说明。
[0030] 图 2公幵了根据本发明实施的一种氮化物发光二极管， 其结构包括： 衬底 101、 缓冲层 102、 n型氮化物层 103、 发光层 104、 P型电子阻挡层 105、 p型氮化镓层 10 6和 p型接触层 107。 其中， 衬底 101优选使用蓝宝石衬底， 也可以选用氮化镓衬 底、 硅衬底或其他衬底； 缓冲层 102为基于 m族氮化物的材料， 优选采用氮化镓 ， 还可以采用氮化铝材料或者铝镓氮材料； n型氮化物层 103优选为氮化镓， 也 可采用铝镓氮材料， 硅惨杂优选浓度为 1x10 i m - 3 ; 发光层 104为多量子阱结构 ， 较佳的为具有 5~50对量子阱构成； p型电子阻挡层 105紧临发光层 104， 用于阻 挡电子进入 p型层与空穴复合， 优选采用 P型 Al Jn yGa ,x_y
Ν(0 < χ < 1 , 0≤y < l， x+y < l) ; p型氮化镓层 106采用镁惨杂， 惨杂浓度为 1x10 19~5xl0 21 cm 3, 优选厚度为 lOOnm至 800nm之间； p型接触层 107的厚度优选 5nm 至 20nm之间。
[0031] 下面结合附图 3~6对发光层 104做详细说明。 具体的， 发光层 104采用 InGaN/Ga N多量子阱结构， 其中量子阱的对数较佳为 14对以上， 在本实施例中， 多量子阱 结构分为前 M对量子阱 104a和后 N对量子阱 104b， 前 M对量子阱 104a邻近 n型氮化 物层 103， 其阱层内插入 AlGaN电子隧穿层， 后 N对量子阱 104b邻近 p型电子阻挡 层 105， 其中 M和 N的较佳取值范围如下： 1≤M<20， 8<N<50, 在一个较佳实施 例中 M可取 4， N可取 10。
[0032] 请参看附图 3， 显示了前 M对插入的量子阱结构， 包括 GaN垒层 104a-l、 InGaN 阱层 104a-2、 AlGaN电子隧穿层 104a-3、 InGaN阱层 104a-4、 AlGaN电子隧穿层层 104a-5、 InGaN阱层 104a-6、 GaN垒层 104a-7。 其中 AlGaN电子隧穿层 104a-3和 10 4a-5具有较高的势垒 (大于 GaN垒层 104a-l的势垒)， 因此需要较高 A1组分， 较佳 的 A1组分 X的取值范围为： l〉x≥0.3， 在一个较佳实施例中， X可取 0.3; 为保证 量子阱的晶格， 较佳的， AlGaN电子隧穿层采用薄层结构， 其厚度以 1埃〜 50埃为 佳， 优选 10埃； 在一些较佳实施例中， 该 AlGaN电子隧穿层 104a-3和 104a-5具有 Si惨杂， 其杂浓度为 1.0x10 19 ~ 2.0x10 20， 可以为平均惨杂， 也可以为非均匀惨 杂 （如采用 delta惨杂） ， 惨入较高的 S似降低电阻， 以均匀惨杂为例， 优选 Si惨 杂浓度为 1.5x10 19。
[0033] 图 4显示了根据本发明实施的一种氮化物发光二极管的 MQW与 EBL的带隙分布 图。 从图中可看出， 在前 M对量子阱的阱层内插入较高带隙的 AlGaN电子隧穿层 ， 电子要跃过 AlGaN的势垒高度或隧穿才能往下跃迁， 因 InGaN阱和 AlGaN电子 隧穿层之间的势垒高度很大， 电子采用热电子发射的机率可从势垒发射 （爬过 去） 的机率可通过控制 A1组分， 改变势垒的高度来实现， 隧穿的机率可通过控 制 AlGaN插入层的厚度来控制， 从而可有效并精确地控制电子波函数的分布， 最 大地提升电子和空穴波函数在发光 MQW量子阱区的复合机率， 有效率地提升发 光效率和亮度。
[0034] 图 5显示了根据本发明实施的一种氮化物发光二极管中电子穿过量子阱的运动 方式， 在该实施例中， 在阱层内插入高势垒 E1的 AlGaN电子隧穿层 104a-3和 104a -5， 电子很难跃迁过 El， 而是被迫作隧穿， 最后再以热电子发射方式越过势垒 E 2跃迁至下一个量子阱中， 可起到降低电子迁移的作用， 改善电子在 MQW分布 的均匀性。
[0035] 由于在 MQW的前端阱层内插入 AlGaN层， 可控制电子的迁移率和电子在发光 量子阱区的分布， 在 MQW之后可使用较低 A1组分的 AlGaN电子阻挡层即可达到 相同的电子阻挡作用。 因此在一些较佳实施例中， 采用较低 A1组分的 p型 AlGaN 作为电子阻挡层 105， 其中 A1组分 X较佳取值为： 0.2〉x〉0 (优选 0.1) 。 由于采 用较低 Al组分的 AlGaN, 可以增加电子阻挡层中的 Mg惨浓度和离化效率， 提高 空穴浓度， 降低电子阻挡层的电阻。 在较佳实施例中， 该 p型 AlGaN电子阻挡层 1 05的惨 Mg浓度为 5x10 18 ~ 5x10 优选 5x10 19。
[0036] 在发光层的前 M对量子阱 104a的阱层内可以插入单层或多层 AlGaN电子隧穿层 ， 图 6所示的实施例中阱层内插入双层 AlGaN电子层。
[0037] 下面分别制作两种样品， 样品一为根据本发明实施的一种氮化物发光二极管， 样品二为图 1所示传统氮化物发光二极管， 并分别测试两样品的发光输出功率和 外量子效率。 具体的， 样品一和样品二采用相同的衬底、 缓冲层、 n型氮化物层 、 p型氮化镓层、 p型接触层 （具体参照前面对各层的表述进行选择） ， 样品一 的发光层采用 14对 InGaN/GaN量子阱结构， 其中在前 4对的阱层内入一层 10埃厚 的惨 Si的 AlGaN层 （A1组分为 0.3， Si惨杂浓度为 1.5x10 19) ， p型电子阻挡层采用 低 A1组分的 p型 AlGaN (Al组分为 0.1) ， 样品二的发光层采用 14对 InGaN/GaN量 子阱结构， 其各对量子阱的结构均相同， p型电子阻挡层采用高 A1组分的 p型 A1G aN (Al组分为 0.4) 。 图 7显示了两样品的发光输出功率与正向电流的关系图， 图 8显示了两样品在不同电流下测得的外量子效率， 用于表征 Efficiency droop的程 度。
[0038] 从图 7可看出， 不同电流条件下的电致发光强度， 样品一的电致发光强度明显 高于传统 LED, 特别在大电流 3000mA的电流条件下， 样品一的发光强度较传统
LED提升约 50%。
[0039] 从图 8可看出， 样品一在不同电流条件下的 Efficiency
droop性能明显优于传统 LED, 外量子效率随电流的衰减程度较传统 LED低约 20~
40% , 进一步证明本发明可有效改善 Efficiency droop的性能， 降低非辐射复合， 有利于 LED在大电流条件下的使用。
[0040] 惟以上所述者， 仅为本发明之较佳实施例而已， 当不能以此限定本发明实施之 范围， 即大凡依本发明申请专利范围及专利说明书内容所作之简单的等效变化 与修饰， 皆仍属本发明专利涵盖之范围内。
[0041]

Claims

权利要求书
氮化物发光二极管， 依次包括： n型氮化物层， 发光层、 p型氮化物层 ， 其特征在于： 所述发光层为垒层和阱层构成的多量子阱结构， 其中 在靠近 n型氮化物层的至少一个阱层内插入 AlGaN电子隧穿层， 其势 垒高度大于所述垒层的势垒高度， 且所述阱层与所述 AlGaN电子隧穿 层的势垒足够高， 使得电子较难以热电子发射方向跃迁， 而主要以隧 穿的方式在 InGaN的阱层中进行跃迁。
根据权利要求 1所述的氮化物发光二极管， 其特征在于： 在所述发光 层靠近 n型氮化物层的前 M对量子阱的阱层内中间插入所述 AlGaN电 子隧穿层， 其中 20〉M≥1。
根据权利要求 1所述的氮化物发光二极管， 其特征在于： 在发光层靠 近 n型氮化物层的前 M对量子阱的阱层内插入单层或多层 AlGaN电子 隧穿层。
根据权利要求 1所述的氮化物发光二极管， 其特征在于： 所述多量子 阱结构中的阱层为 InGaN。
根据权利要求 1所述的氮化物发光二极管， 其特征在于： 所述 AlGaN 电子隧穿层中 A1组分 X的取值范围为： l〉x≥0.3。
根据权利要求 1所述的氮化物发光二极管， 其特征在于： 所述 AlGaN 电子隧穿层的厚度为 1埃〜 50埃。
根据权利要求 1所述的氮化物发光二极管， 其特征在于： 所述 AlGaN 电子隧穿层具有 Si惨杂。
根据权利要求 7所述的氮化物发光二极管， 其特征在于： 所述 AlGaN 电子隧穿层中 Si惨杂浓度为 1.0x10 19 ~ 2.0x10 2ΰ。
根据权利要求 7所述的氮化物发光二极管， 其特征在于： 所述 AlGaN 电子隧穿层中 Si惨杂采用 delta惨杂。
根据权利要求 1所述的氮化物发光二极管， 其特征在于： 还包括一 p型 Al Jn yGa i— x— yN电子阻挡层， 0.2〉x〉0。
根据权利要求 10所述的氮化物发光二极管， 其特征在于： 所述 p型 Al x In yGa x— yN电子阻挡层的惨 Mg浓度为 5x10 18 ~ 5x10 2。。
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