WO2016111309A1 - 投影露光装置 - Google Patents
投影露光装置 Download PDFInfo
- Publication number
- WO2016111309A1 WO2016111309A1 PCT/JP2016/050221 JP2016050221W WO2016111309A1 WO 2016111309 A1 WO2016111309 A1 WO 2016111309A1 JP 2016050221 W JP2016050221 W JP 2016050221W WO 2016111309 A1 WO2016111309 A1 WO 2016111309A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- exposure
- microlens array
- scanning
- substrate
- projection exposure
- Prior art date
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
- G02B26/101—Scanning systems with both horizontal and vertical deflecting means, e.g. raster or XY scanners
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Definitions
- the present invention relates to a projection exposure apparatus using a microlens array.
- Patent Document 1 an exposure apparatus that projects and exposes a mask pattern onto a substrate is known in which a microlens array is interposed between the mask and the substrate (see Patent Document 1 below).
- this prior art includes a substrate stage J1 that supports a substrate W and a mask M on which a pattern to be exposed on the substrate W is formed, and the substrate W and the mask M arranged at a set interval. Between them, a microlens array MLA in which microlenses are two-dimensionally arranged is arranged.
- the exposure light L is irradiated from above the mask M, the light that has passed through the pattern (opening) of the mask M is projected onto the substrate W by the microlens array MLA, and the pattern formed on the mask M is Transferred to the substrate surface.
- a microlens array MLA and an exposure light source are fixedly arranged, and the micromask array MLA and the substrate W are microscopically arranged in a scanning direction Sc perpendicular to the paper surface.
- the exposure light L scans and exposes the substrate W by moving the lens array MLA relatively.
- the present invention is an example of a problem to deal with such a problem. That is, in a projection exposure apparatus that projects and exposes a mask pattern of a mask on a substrate while scanning the microlens array in one direction, no significant exposure unevenness occurs even when there are defects or defects in the microlens. This is the object of the present invention.
- a projection exposure apparatus comprises the following arrangement.
- a projection exposure apparatus that projects exposure light onto a substrate via a microlens array, the scanning exposure unit moving the microlens array along a scanning direction from one end of the substrate toward the other end, and the scanning A projection exposure apparatus comprising: a microlens array shift unit that moves the microlens array in a shift direction that intersects the scanning direction while the microlens array is moved by an exposure unit.
- the projection exposure apparatus of the present invention having such a feature performs projection exposure while shifting the microlens array in a direction intersecting the scanning direction, remarkable exposure unevenness is present even when there are defects or defects in the microlens array. It is possible to project and expose the entire surface of the substrate without causing the above.
- FIG. 2 is an explanatory view (a) shows a state at the start of scanning exposure, and (b) shows a state at the end of scanning exposure) when a projection exposure apparatus according to an embodiment of the present invention is viewed sideways. It is explanatory drawing ((a) shows the state at the time of scanning exposure start, (b) shows the state at the time of completion
- FIG. 2 and 3 show a projection exposure apparatus according to an embodiment of the present invention.
- 2 is an explanatory view in side view
- FIG. 3 is an explanatory view in plan view
- (a) shows a state at the start of scanning exposure
- (b) shows a state at the end of scanning exposure.
- the X-axis direction indicates the width direction of the substrate
- the Y-axis direction indicates the longitudinal direction of the substrate
- the Z-axis direction indicates the vertical direction.
- the projection exposure apparatus 1 is an apparatus that projects the exposure light L onto the substrate W via the microlens array 2, and includes a scanning exposure unit 10 and a microlens array shift unit 20.
- the projection exposure apparatus 1 includes a substrate support unit 3 that supports the substrate W and a mask support unit 4 that supports a mask M having a mask pattern opened in a predetermined shape.
- the microlens array 2 is arranged between the substrate W supported by 3 and the mask M supported by the mask support 4, and scanning is performed by irradiating the exposure light L onto the substrate W via the microlens array 2. Projection exposure is performed.
- the scanning exposure unit 10 includes the microlens array 2 and the light source 11 described above, and moves them along the scanning direction Sc (Y-axis direction in the drawing) while fixing their positional relationship.
- the scanning exposure unit 10 includes a scanning guide 12 for moving the microlens array 2 along the scanning direction Sc from one end to the other end of the substrate W.
- the scanning guides 12 are provided on both sides of the substrate support portion 3 in the X-axis direction along the longitudinal direction of the substrate W.
- the exposure light L emitted from the light source 11 of the scanning exposure unit 10 passes through the opening of the mask M and is irradiated onto the substrate W through the microlens array 2.
- the exposure light L that passes through a part of the light is imaged on the substrate W.
- the microlens array 2 that is an imaging optical system is preferably, for example, a double-sided telecentric lens of the same magnification.
- the mask pattern of the mask M is transferred onto the effective exposure surface of the substrate W by moving the scanning exposure unit 10 in the scanning direction Sc and performing scanning projection exposure.
- the microlens array shift unit 20 moves the microlens array 2 in the shift direction Sf intersecting the scanning direction Sc while the microlens array 2 is moved in the scanning direction Sc by the scanning exposure unit 10.
- the microlens array shift unit 20 includes a shift guide 21 in order to move the microlens array 2 as described above.
- the shift guide 21 extends in the shift direction Sf (X direction in the drawing) and moves the microlens array 2 in the shift direction Sf while moving in the scan direction Sc along the scan guide 12.
- the length (length in the X direction in the figure) of the microlens array 2 that is movably supported by the microlens array shift unit 20 is configured to be longer than the shift amount set by the effective exposure width Xa of the substrate W.
- the shift guide 21 has a length in the X-axis direction necessary for moving the microlens array 2 by a shift amount set in the shift direction Sf.
- the projection exposure apparatus 1 having such a configuration extends from the start of scanning exposure shown in FIG. 2 and FIG. 3A to the end of scanning exposure shown in FIG. 2 and FIG. Then, projection exposure of the mask pattern is performed while moving the light source 11 and the microlens array 2 from one end of the substrate W toward the other end.
- the microlens array 2 used in the projection exposure apparatus 1 is covered with a light-shielding film other than the effective exposure region for each lens unit 2U.
- the effective exposure region has a hexagonal field stop ( A hexagonal field stop 2S) is formed.
- the lens only 2U of the microlens array 2 are arranged at a pitch spacing p x in the X-axis direction shown in the figure, are arranged at a pitch spacing p y in the Y-axis direction illustrated, triangular portions in the hexagonal field stop 2S
- a plurality of rows are arranged in the XY axis direction as a set of three rows so as to overlap the X-axis direction width S1.
- the exposure amount in the X-axis direction width S1 of the triangular portion in the hexagonal field stop 2S and the exposure amount in the X-axis direction width S2 of the rectangular portion in the hexagonal field stop 2S are uniform.
- exposure unevenness does not occur at the joint between the single lenses 2U.
- X -axis direction width S1 20 [mu] m
- X-axis direction width S2 30 [mu] m of the rectangular portion of the triangular portion.
- the projection exposure apparatus 1 of the present invention performs scanning exposure not only by moving the microlens array 2 in the scanning direction Sc but also in the shift direction Sf. Therefore, the exposure area by the light passing through the defect portion D is dispersed in the shift direction Sf, and the occurrence of the noticeable stripe-shaped exposure unevenness m can be avoided.
- FIG. 5 is a graph showing the results of the scanning exposure shown in FIGS. 4A and 4B, and shows the exposure amount at the exposure position along the X-axis direction.
- FIG. 4A in the scanning exposure in which the microlens array 2 is moved only in the scanning direction Sc, as shown in FIG. 5A, a uniform exposure amount is obtained at an exposure position where the defective portion D does not exist.
- an exposure amount reduction region having a width m1 is formed in a streak shape.
- FIG. 6 when scanning exposure is performed by moving the microlens array 2 not only in the scanning direction Sc but also in the shift direction Sf as in the example shown in FIG. 4B, FIG. As shown in FIG. 6, since the overlap of the triangular portion of the hexagonal field stop is shifted, there is a slight variation in the exposure amount at the entire exposure position. However, the exposure amount reduction region is leveled by the movement of the microlens array 2 in the shift direction Sf, and the noticeable streak-like exposure unevenness is eliminated.
- the shift amount of the microlens array 2 when the entire effective exposure region of the substrate is exposed can be set as appropriate according to the above-described width m1 of the exposure amount reduction region. Basically, streaky exposure unevenness can be effectively eliminated with a shift amount equivalent to the width m1 of the exposure amount reduction region. As a specific result, it is preferable to set the shift amount so that the difference between the maximum exposure amount and the minimum exposure amount is 2% or less of the average exposure amount of the entire exposure position.
- 1 Projection exposure apparatus
- 2 Micro lens array
- 2U single lens
- 2S hexagonal field stop
- 3 substrate support part
- 4 mask support part
- 10 scanning exposure unit
- 11 light source
- 12 scanning guide
- 20 Micro lens array shift unit
- 21 Shift guide
- L exposure light
- W substrate
- M mask
- Sc scanning direction
- Sf shift direction
- Xa Effective exposure width
- D Defect
- m Exposure unevenness
- p x , p y Pitch interval
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
露光光をマイクロレンズアレイを介して基板上に投影する投影露光装置であって、前記基板の一端から他端に向けた走査方向に沿って前記マイクロレンズアレイを移動させる走査露光部と、前記走査露光部による前記マイクロレンズアレイの移動中に、前記マイクロレンズアレイを前記走査方向と交差するシフト方向に移動させるマイクロレンズアレイシフト部とを備えることを特徴とする投影露光装置。
2U:レンズ単体,2S:六角視野絞り,
3:基板支持部,4:マスク支持部,
10:走査露光部,11:光源,12:走査ガイド,
20:マイクロレンズアレイシフト部,21:シフトガイド,
L:露光光,W:基板,M:マスク,Sc:走査方向,Sf:シフト方向,
Xa:有効露光幅,D:欠陥部,m:露光ムラ,px,py:ピッチ間隔
Claims (4)
- 露光光をマイクロレンズアレイを介して基板上に投影する投影露光装置であって、
前記基板の一端から他端に向けた走査方向に沿って前記マイクロレンズアレイを移動させる走査露光部と、
前記走査露光部による前記マイクロレンズアレイの移動中に、前記マイクロレンズアレイを前記走査方向と交差するシフト方向に移動させるマイクロレンズアレイシフト部とを備えることを特徴とする投影露光装置。 - 前記走査露光部が前記基板の一端から他端まで前記マイクロレンズアレイを移動させる間に前記マイクロレンズアレイシフト部が前記マイクロレンズアレイを移動させるシフト量は、前記走査露光部のみで前記マイクロレンズアレイを移動させた場合に生じる露光量低下領域の幅に応じて設定されることを特徴とする請求項1記載の投影露光装置。
- 前記走査方向に直交する露光位置全体の平均露光量に対して最大露光量と最小露光量との差が2%以下になるように、前記シフト量を設定することを特徴とする請求項2記載の投影露光装置。
- 露光光をマイクロレンズアレイを介して基板上に投影する投影露光方法であって、
前記基板の一端から他端に向けた走査方向に沿って前記マイクロレンズアレイを移動させながら走査露光を行う際に、前記マイクロレンズアレイを前記走査方向と交差する方向に移動させることを特徴とする投影露光方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020177016801A KR20170102238A (ko) | 2015-01-09 | 2016-01-06 | 투영 노광 장치 |
CN201680005296.3A CN107111252B (zh) | 2015-01-09 | 2016-01-06 | 投影曝光装置 |
US15/542,281 US20180003952A1 (en) | 2015-01-09 | 2016-01-06 | Projection exposure device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015003636A JP6447148B2 (ja) | 2015-01-09 | 2015-01-09 | 投影露光装置 |
JP2015-003636 | 2015-01-09 |
Publications (1)
Publication Number | Publication Date |
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WO2016111309A1 true WO2016111309A1 (ja) | 2016-07-14 |
Family
ID=56355995
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2016/050221 WO2016111309A1 (ja) | 2015-01-09 | 2016-01-06 | 投影露光装置 |
Country Status (6)
Country | Link |
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US (1) | US20180003952A1 (ja) |
JP (1) | JP6447148B2 (ja) |
KR (1) | KR20170102238A (ja) |
CN (1) | CN107111252B (ja) |
TW (1) | TW201635043A (ja) |
WO (1) | WO2016111309A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09244254A (ja) * | 1996-03-13 | 1997-09-19 | Nikon Corp | 液晶用露光装置 |
JP2008176257A (ja) * | 2007-01-22 | 2008-07-31 | Tokyo Denki Univ | 投影露光装置および投影露光方法 |
JP2013229536A (ja) * | 2011-06-02 | 2013-11-07 | Nsk Technology Co Ltd | 露光装置及び露光方法 |
JP2014222746A (ja) * | 2013-05-14 | 2014-11-27 | 株式会社ブイ・テクノロジー | 露光装置及び露光方法 |
WO2015001736A1 (ja) * | 2013-07-01 | 2015-01-08 | 株式会社ブイ・テクノロジー | 露光装置および照明ユニット |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7756660B2 (en) * | 2004-12-28 | 2010-07-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4858439B2 (ja) * | 2005-01-25 | 2012-01-18 | 株式会社ニコン | 露光装置及び露光方法並びにマイクロデバイスの製造方法 |
US9645502B2 (en) * | 2011-04-08 | 2017-05-09 | Asml Netherlands B.V. | Lithographic apparatus, programmable patterning device and lithographic method |
CN103858208B (zh) * | 2011-08-10 | 2016-08-24 | 株式会社V技术 | 曝光装置用的对准装置以及对准标记 |
JP6342842B2 (ja) * | 2015-04-30 | 2018-06-13 | オリンパス株式会社 | 走査型顕微鏡システム |
-
2015
- 2015-01-09 JP JP2015003636A patent/JP6447148B2/ja not_active Expired - Fee Related
-
2016
- 2016-01-06 CN CN201680005296.3A patent/CN107111252B/zh not_active Expired - Fee Related
- 2016-01-06 WO PCT/JP2016/050221 patent/WO2016111309A1/ja active Application Filing
- 2016-01-06 US US15/542,281 patent/US20180003952A1/en not_active Abandoned
- 2016-01-06 KR KR1020177016801A patent/KR20170102238A/ko unknown
- 2016-01-07 TW TW105100408A patent/TW201635043A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09244254A (ja) * | 1996-03-13 | 1997-09-19 | Nikon Corp | 液晶用露光装置 |
JP2008176257A (ja) * | 2007-01-22 | 2008-07-31 | Tokyo Denki Univ | 投影露光装置および投影露光方法 |
JP2013229536A (ja) * | 2011-06-02 | 2013-11-07 | Nsk Technology Co Ltd | 露光装置及び露光方法 |
JP2014222746A (ja) * | 2013-05-14 | 2014-11-27 | 株式会社ブイ・テクノロジー | 露光装置及び露光方法 |
WO2015001736A1 (ja) * | 2013-07-01 | 2015-01-08 | 株式会社ブイ・テクノロジー | 露光装置および照明ユニット |
Also Published As
Publication number | Publication date |
---|---|
CN107111252A (zh) | 2017-08-29 |
US20180003952A1 (en) | 2018-01-04 |
KR20170102238A (ko) | 2017-09-08 |
JP2016128892A (ja) | 2016-07-14 |
TW201635043A (zh) | 2016-10-01 |
JP6447148B2 (ja) | 2019-01-09 |
CN107111252B (zh) | 2018-12-25 |
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