WO2016061840A1 - 白光oled器件结构 - Google Patents

白光oled器件结构 Download PDF

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WO2016061840A1
WO2016061840A1 PCT/CN2014/089954 CN2014089954W WO2016061840A1 WO 2016061840 A1 WO2016061840 A1 WO 2016061840A1 CN 2014089954 W CN2014089954 W CN 2014089954W WO 2016061840 A1 WO2016061840 A1 WO 2016061840A1
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layer
light
quantum dot
emitting layer
emitting
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邹清华
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/824—Group II-VI nonoxide compounds, e.g. CdxMnyTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/952—Display

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a white light OLED device structure.
  • OLED is a promising flat panel display technology. It has excellent display performance, self-illumination, simple structure, ultra-thin, fast response, wide viewing angle, low power consumption and flexible display. Known as “dream display.” In addition, its production equipment investment is much smaller than TFT-LCD, which has won the favor of major display manufacturers and has become the main force of the third-generation display devices in the display technology field. At present, OLED has been on the eve of mass production. With the further development of research and the emergence of new technologies, OLED display devices will have a breakthrough development.
  • WOLED white organic light emitting diode
  • CF color filter layer
  • Quantum dot LED semiconductor technology
  • Light of any visible wavelength i.e., various colors
  • quantum dots can be generated and emitted by varying the size of the luminescent material quantum dots.
  • It is a quantum dot organic light-emitting device with a new structure which combines organic materials and high-efficiency luminescent inorganic nanocrystals. It has unparalleled technical advantages and application prospects compared with ordinary inorganic semiconductor light-emitting diodes.
  • QD-LED uses inorganic quantum dots as a composite material for the light-emitting layer. In addition to the characteristics of small molecules and polymer materials, it also reduces the stringent requirements for packaging. Since quantum dots are made of inorganic materials, they are more stable in water vapor or oxygen than similar organic semiconductors. The quantum efficiency of quantum LEDs can reach 90%, and it can be made with a commercial organic transport layer. Into the QD-LED assembly. Since white light is very popular in commercial applications, and the light emitted by each quantum dot is relatively pure, research on white light QD-LED devices has been paid more and more attention.
  • the brightness of the device has excellent performance and can be applied to flat panel displays, televisions and other display fields.
  • the present invention provides a white light OLED device structure comprising two or more light emitting layers, wherein at least one light emitting layer is prepared by using quantum dots, and at least one light emitting layer is prepared by using an organic light emitting material.
  • the white light OLED device structure includes a substrate, an anode formed on the substrate, a first hole injection layer formed on the anode, a first hole transport layer formed on the first hole injection layer, and formed on a first light emitting layer on the first hole transporting layer, a first electron transporting layer formed on the first light emitting layer, a first electron injecting layer formed on the first electron transporting layer, and being formed on the first electron injecting layer a charge generation layer, a second hole injection layer formed on the charge generation layer, a second hole transport layer formed on the second hole injection layer, and a second light emitting layer formed on the second hole transport layer a second electron transport layer formed on the second light-emitting layer, a second electron injection layer formed on the second electron transport layer, a cathode formed on the second electron injection layer, a package cover plate disposed above the cathode, And a sealant frame disposed between the substrate and the package cover to bond the substrate and the package cover.
  • the first luminescent layer is prepared using quantum dots, and the second luminescent layer is prepared using an organic luminescent material.
  • the quantum dot is one or more of a blue quantum dot, a yellow light quantum dot, a green light quantum dot, a red light quantum dot or a white light quantum dot, and the light emitted by the organic light emitting material of the second light emitting layer and the first light emitting The light emitted by the quantum dots of the layer combines to form white light.
  • the first electron transport layer and the second hole transport layer between the first light-emitting layer and the second light-emitting layer respectively transmit electrons and holes formed by the charge generating layer under the electric field to the first light-emitting layer and
  • the two light-emitting layers, and the holes and electrons injected respectively from the anode and the cathode are combined in the first light-emitting layer and the second light-emitting layer to generate different light colors and combine to form white light.
  • the charge generation layer includes a first charge generation layer formed on the first electron injection layer and a second charge generation layer formed on the first charge generation layer, the first charge generation layer having electron transport characteristics,
  • the second charge generation layer has hole transport properties.
  • the charge generation layer is formed by mixing a p-type organic semiconductor and an n-type organic semiconductor.
  • the first luminescent layer is prepared using an organic luminescent material, and the second luminescent layer is prepared using quantum dots.
  • the quantum dot is one or more of a blue light quantum dot, a yellow light quantum dot, a green light quantum dot, a red light quantum dot or a white light quantum dot, and the light emitted by the organic light emitting material of the first light emitting layer
  • the light emitted by the quantum dots of the second luminescent layer combines to form white light.
  • the invention provides a white light OLED device structure having a plurality of light emitting layers, wherein at least one light emitting layer is prepared by using quantum dots, and at least one light emitting layer is prepared by using an organic light emitting material, combining quantum dots with
  • the advantages of the organic light-emitting material, low fabrication cost, high material utilization rate, and high luminous efficiency, thereby improving the brightness of the display device, and having excellent performance, can be applied to flat displays, televisions, and other display fields.
  • FIG. 1 is a schematic cross-sectional view showing the structure of a white OLED device of the present invention
  • FIG. 2 is a schematic cross-sectional view showing another structure of a white OLED device of the present invention.
  • the white light OLED device structure provided by the invention comprises two or more light emitting layers, wherein at least one light emitting layer is prepared by using quantum dots, and at least one light emitting layer is prepared by using an organic light emitting material.
  • the white OLED device structure includes a substrate 1, an anode 21 formed on the substrate 1, a first hole injection layer 31 formed on the anode 21, and a first hole formed on the first hole injection layer 31.
  • a transport layer 41 a transport layer 41, a first luminescent layer 51 formed on the first hole transport layer 41, a first electron transport layer 61 formed on the first luminescent layer 51, and a first electron formed on the first electron transport layer 61
  • the substrate 1 and the package cover 2 are made of glass or a flexible material, and at least one of the substrate 1 and the package cover 2 is transparent.
  • the substrate 1 and the package cover 2 are both glass plates.
  • the substrate 1 and the package cover 2 are bonded together through the sealant frame 3, so that external water vapor and oxygen can be prevented from entering, thereby sealing and protecting the internal electronic components.
  • the first luminescent layer 51 is prepared by using quantum dots
  • the second luminescent layer 52 is prepared by using an organic luminescent material. Since the fluorescence efficiency of the quantum dots is extremely high, the luminous efficiency of the composite light-emitting layer composed of the first light-emitting layer 51 prepared by using the quantum dots and the second light-emitting layer 52 prepared by using the organic light-emitting material is also greatly improved, thereby effectively improving the display device. brightness.
  • the quantum dot is one or more of a blue quantum dot, a yellow light quantum dot, a green light quantum dot, a red light quantum dot or a white light quantum dot, and the light emitted by the organic light emitting material of the second light emitting layer 52 is first
  • the light emitted by the quantum dots of the light-emitting layer 51 combines to form white light.
  • the first electron transport layer 61 and the second hole transport layer 42 between the first light-emitting layer 51 and the second light-emitting layer 52 respectively transmit electrons and holes formed by the charge generating layer 8 under the electric field to the first A light-emitting layer 51 and a second light-emitting layer 52, and holes and electrons injected into the anode 21 and the cathode 22, respectively, are combined in the first light-emitting layer 51 and the second light-emitting layer 52 to generate different light colors and combine to form white light.
  • the charge generation layer 8 includes a first charge generation layer 81 formed on the first electron injection layer 71 and a second charge generation layer 82 formed on the first charge generation layer 81, the first charge generation layer 81 having The electron transporting property, the second charge generating layer 82 has a hole transporting property. Therefore, electrons generated from the charge generating layer 8 can be transferred to the first light emitting layer 51 through the first charge generating layer 81, and holes generated from the charge generating layer 8 can be transferred to the second light emitting layer 52 through the second charge generating layer 82. .
  • the charge generating layer 8 may also be a single layer charge generating layer formed by mixing a p-type organic semiconductor and an n-type organic semiconductor.
  • the interaction between the p-type organic semiconductor and the n-type organic semiconductor exists inside and at the interface of the charge generation layer, electrons generated in the charge generation layer accumulate on one side of the n-type organic semiconductor, and holes accumulate in the p-type organic semiconductor. On one side, and under a certain voltage, electrons and holes are transported to the anode 21 and the cathode 22, respectively.
  • Fig. 2 shows another structure of the white OLED device of the present invention, in which the first luminescent layer 51' is prepared using an organic luminescent material and the second luminescent layer 52' is prepared using quantum dots.
  • the quantum dot is one or more of a blue quantum dot, a yellow light quantum dot, a green light quantum dot, a red light quantum dot or a white light quantum dot, and the light emitted by the organic light emitting material of the first light emitting layer 51 ′
  • the light emitted by the quantum dots of the two luminescent layers 52' combine to form white light.
  • the present invention provides a white light OLED device structure having a plurality of light emitting layers, wherein at least one light emitting layer is prepared by using quantum dots, and at least one light emitting layer is prepared by using an organic light emitting material, combining quantum dots and organic light emitting.

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Abstract

提供一种白光OLED器件结构，具有多层发光层，其中至少一层发光层采用量子点制备，至少一层发光层采用有机发光材料制备，结合了量子点与有机发光材料的优点，制作成本低，材料利用率高，且发光效率高，从而提高显示器件的亮度，具有优良的性能，可应用于平面显示器、电视机及其他显示领域。

Description

白光OLED器件结构 技术领域
本发明涉及显示技术领域，尤其涉及一种白光OLED器件结构。
背景技术
OLED是一种极具发展前景的平板显示技术，它具有十分优异的显示性能，具有自发光、结构简单、超轻薄、响应速度快、宽视角、低功耗及可实现柔性显示等特性，被誉为“梦幻显示器”。再加上其生产设备投资远小于TFT-LCD，得到了各大显示器厂家的青睐，已成为显示技术领域中第三代显示器件的主力军。目前OLED已处于大规模量产的前夜，随着研究的进一步深入，新技术的不断涌现，OLED显示器件必将有一个突破性的发展。
为实现OLED显示器的全彩化，一种方式是通过白色有机发光二极管(WOLED，White Organic Light Emitting Diode)和彩色滤光层(CF，Color Filter)叠加来实现。其中，WOLED和CF层叠加过程不需要精准的掩膜工艺，就可以实现OLED显示器的高分辨率。
近年来，随着半导体照明技术的发展，各种发光器件结构不断被提出。量子点LED(QD-LED)半导体技术便是其中之一。通过改变发光材料量子点的尺寸能产生和发出任意可见波长(即各种颜色)的光。它是把有机材料和高效发光无机纳米晶结合在一起而产生的拥有新型结构的量子点有机发光器件，跟普通无机半导体发光二极管相比具有无可比拟的技术优势和应用前景。
由于QD-LED的如此多的优点，量子点发光二极管在显示器中的应用前景非常乐观。QD-LED以无机量子点作为发光层的复合性材料,除了具有小分子和高分子材料的特性之外，还降低对封装的严苛要求。由于量子点是由无机材料所构成，使得它们在水气或氧气中，比同类的有机半导体更为稳定，量子LED的量子效率可达90％，并且搭配商业化的有机传输层，便可制成QD-LED组件。由于白光在商业用途中很受欢迎，并且各色量子点发出的光较纯，因此对白光QD-LED器件的研究也越来越被重视。
发明内容
本发明的目的在于提供一种白光OLED器件结构，具有多层发光层， 其中至少一层发光层采用量子点制备，至少一层发光层采用有机发光材料制备，结合了量子点与有机发光材料的优点，制作成本低，材料利用率高，且发光效率高，从而提高显示器件的亮度，具有优良的性能，可应用于平面显示器、电视机及其他显示领域。
为实现上述目的，本发明提供一种白光OLED器件结构，包括两层或两层以上的发光层，其中至少一层发光层采用量子点制备，至少一层发光层采用有机发光材料制备。
优选地，所述白光OLED器件结构包括基板、形成于基板上的阳极、形成于阳极上的第一空穴注入层、形成于第一空穴注入层上的第一空穴传输层、形成于第一空穴传输层上的第一发光层、形成于第一发光层上的第一电子传输层、形成于第一电子传输层上的第一电子注入层、形成于第一电子注入层上的电荷产生层、形成于电荷产生层上的第二空穴注入层、形成于第二空穴注入层上的第二空穴传输层、形成于第二空穴传输层上的第二发光层、形成于第二发光层上的第二电子传输层、形成于第二电子传输层上的第二电子注入层、形成于第二电子注入层上的阴极、设于阴极上方的封装盖板、及设于基板与封装盖板之间粘结所述基板与封装盖板的密封胶框。
所述第一发光层采用量子点制备，所述第二发光层采用有机发光材料制备。
所述量子点为蓝光量子点、黄光量子点、绿光量子点、红光量子点或白光量子点中的一种或多种，所述第二发光层的有机发光材料所发出的光与第一发光层的量子点所发出的光结合形成白光。
所述第一发光层与第二发光层之间的第一电子传输层与第二空穴传输层，分别把电荷产生层在电场作用下形成的电子和空穴传输到第一发光层和第二发光层，并分别与阳极及阴极注入的空穴和电子在第一发光层与第二发光层复合，产生不同的光色并结合形成白光。
所述电荷产生层包括形成于第一电子注入层上的第一电荷产生层与形成于第一电荷产生层上的第二电荷产生层，所述第一电荷产生层具有电子传输特性，所述第二电荷产生层具有空穴传输特性。
所述电荷产生层为p型有机半导体与n型有机半导体混合形成。
所述第一发光层采用有机发光材料制备，所述第二发光层采用量子点制备。
所述量子点为蓝光量子点、黄光量子点、绿光量子点、红光量子点或白光量子点中的一种或多种，所述第一发光层的有机发光材料所发出的光 与第二发光层的量子点所发出的光结合形成白光。
本发明的有益效果：本发明提供的一种白光OLED器件结构，具有多层发光层，其中至少一层发光层采用量子点制备，至少一层发光层采用有机发光材料制备，结合了量子点与有机发光材料的优点，制作成本低，材料利用率高，且发光效率高，从而提高显示器件的亮度，具有优良的性能，可应用于平面显示器、电视机及其他显示领域。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的白光OLED器件结构的剖面示意图；
图2为本发明的白光OLED器件的另一种结构的剖面示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
本发明提供的白光OLED器件结构，包括两层或两层以上的发光层，其中至少一层发光层采用量子点制备，至少一层发光层采用有机发光材料制备。
图1所示为本发明白光OLED器件结构的一较佳实施例，该实施例中发光层的数量为两个，分别是第一发光层与第二发光层。具体地，该白光OLED器件结构包括基板1、形成于基板1上的阳极21、形成于阳极21上的第一空穴注入层31、形成于第一空穴注入层31上的第一空穴传输层41、形成于第一空穴传输层41上的第一发光层51、形成于第一发光层51上的第一电子传输层61、形成于第一电子传输层61上的第一电子注入层71、形成于第一电子注入层71上的电荷产生层8、形成于电荷产生层8上的第二空穴注入层32、形成于第二空穴注入层32上的第二空穴传输层42、形成于第二空穴传输层42上的第二发光层52、形成于第二发光层52上的第二电子传输层62、形成于第二电子传输层62上的第二电子注入层72、形成于第二电子注入层72上的阴极22、设于阴极22上方的封装盖板2、及 设于基板1与封装盖板2之间粘结所述基板1与封装盖板2的密封胶框3。
本发明的白光OLED器件结构中，所述基板1与封装盖板2为玻璃或柔性材料，所述基板1与封装盖板2中至少有一个透光。优选的，所述基板1与封装盖板2均为玻璃板。所述基板1与封装盖板2通过密封胶框3粘结在一起，可以防止外界的水汽、氧气进入，从而密封与保护内部电子器件。
其中，所述第一发光层51采用量子点制备，所述第二发光层52采用有机发光材料制备。由于量子点的荧光效率极高，因此采用量子点制备的第一发光层51与采用有机发光材料制备的第二发光层52构成的复合发光层的发光效率也大大提高，从而有效提高显示器件的亮度。
所述量子点为蓝光量子点、黄光量子点、绿光量子点、红光量子点或白光量子点中的一种或多种，所述第二发光层52的有机发光材料所发出的光与第一发光层51的量子点所发出的光结合形成白光。
所述第一发光层51与第二发光层52之间的第一电子传输层61与第二空穴传输层42，分别把电荷产生层8在电场作用下形成的电子和空穴传输到第一发光层51和第二发光层52，并分别与阳极21及阴极22注入的空穴和电子在第一发光层51与第二发光层52复合，产生不同的光色并结合形成白光。
所述电荷产生层8包括形成于第一电子注入层71上的第一电荷产生层81与形成于第一电荷产生层81上的第二电荷产生层82，所述第一电荷产生层81具有电子传输特性，所述第二电荷产生层82具有空穴传输特性。因此，从电荷产生层8产生的电子可通过第一电荷产生层81传递到第一发光层51，从电荷产生层8产生的空穴可通过第二电荷产生层82传递到第二发光层52。
值得一提的是，所述电荷产生层8也可以是由p型有机半导体与n型有机半导体混合形成的单层电荷产生层。该种电荷产生层内部和界面处均存在p型有机半导体与n型有机半导体的相互作用，电荷产生层中产生的电子累积在n型有机半导体的一侧，空穴累积在p型有机半导体的一侧，并在一定电压的作用下，使电子和空穴分别向阳极21与阴极22传输。
图2所示为本发明的白光OLED器件的另一种结构，其中，第一发光层51’采用有机发光材料制备，第二发光层52’采用量子点制备。
所述量子点为蓝光量子点、黄光量子点、绿光量子点、红光量子点或白光量子点中的一种或多种，所述第一发光层51’的有机发光材料所发出的光与第二发光层52’的量子点所发出的光结合形成白光。
综上所述，本发明提供一种白光OLED器件结构，具有多层发光层，其中至少一层发光层采用量子点制备，至少一层发光层采用有机发光材料制备，结合了量子点与有机发光材料的优点，制作成本低，材料利用率高，且发光效率高，从而提高显示器件的亮度，具有优良的性能，可应用于平面显示器、电视机及其他显示领域。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

  1. 一种白光OLED器件结构，包括两层或两层以上的发光层，其中至少一层发光层采用量子点制备，至少一层发光层采用有机发光材料制备。
  2. 如权利要求1所述的白光OLED器件结构，其中，包括基板、形成于基板上的阳极、形成于阳极上的第一空穴注入层、形成于第一空穴注入层上的第一空穴传输层、形成于第一空穴传输层上的第一发光层、形成于第一发光层上的第一电子传输层、形成于第一电子传输层上的第一电子注入层、形成于第一电子注入层上的电荷产生层、形成于电荷产生层上的第二空穴注入层、形成于第二空穴注入层上的第二空穴传输层、形成于第二空穴传输层上的第二发光层、形成于第二发光层上的第二电子传输层、形成于第二电子传输层上的第二电子注入层、形成于第二电子注入层上的阴极、设于阴极上方的封装盖板、及设于基板与封装盖板之间粘结所述基板与封装盖板的密封胶框。
  3. 如权利要求2所述的白光OLED器件结构，其中，所述第一发光层采用量子点制备，所述第二发光层采用有机发光材料制备。
  4. 如权利要求3所述的白光OLED器件结构，其中，所述量子点为蓝光量子点、黄光量子点、绿光量子点、红光量子点或白光量子点中的一种或多种，所述第二发光层的有机发光材料所发出的光与第一发光层的量子点所发出的光结合形成白光。
  5. 如权利要求2所述的白光OLED器件结构，其中，所述第一发光层与第二发光层之间的第一电子传输层与第二空穴传输层，分别把电荷产生层在电场作用下形成的电子和空穴传输到第一发光层和第二发光层，并分别与阳极及阴极注入的空穴和电子在第一发光层与第二发光层复合，产生不同的光色并结合形成白光。
  6. 如权利要求2所述的白光OLED器件结构，其中，所述电荷产生层包括形成于第一电子注入层上的第一电荷产生层与形成于第一电荷产生层上的第二电荷产生层，所述第一电荷产生层具有电子传输特性，所述第二电荷产生层具有空穴传输特性。
  7. 如权利要求2所述的白光OLED器件结构，其中，所述电荷产生层为p型有机半导体与n型有机半导体混合形成。
  8. 如权利要求2所述的白光OLED器件结构，其中，所述第一发光层采用有机发光材料制备，所述第二发光层采用量子点制备。
  9. 如权利要求8所述的白光OLED器件结构，其中，所述量子点为蓝光量子点、黄光量子点、绿光量子点、红光量子点或白光量子点中的一种或多种，所述第一发光层的有机发光材料所发出的光与第二发光层的量子点所发出的光结合形成白光。
  10. 一种白光OLED器件结构，包括两层或两层以上的发光层，其中至少一层发光层采用量子点制备，至少一层发光层采用有机发光材料制备；
    其中，包括基板、形成于基板上的阳极、形成于阳极上的第一空穴注入层、形成于第一空穴注入层上的第一空穴传输层、形成于第一空穴传输层上的第一发光层、形成于第一发光层上的第一电子传输层、形成于第一电子传输层上的第一电子注入层、形成于第一电子注入层上的电荷产生层、形成于电荷产生层上的第二空穴注入层、形成于第二空穴注入层上的第二空穴传输层、形成于第二空穴传输层上的第二发光层、形成于第二发光层上的第二电子传输层、形成于第二电子传输层上的第二电子注入层、形成于第二电子注入层上的阴极、设于阴极上方的封装盖板、及设于基板与封装盖板之间粘结所述基板与封装盖板的密封胶框；
    其中，所述第一发光层采用量子点制备，所述第二发光层采用有机发光材料制备；
    其中，所述量子点为蓝光量子点、黄光量子点、绿光量子点、红光量子点或白光量子点中的一种或多种，所述第二发光层的有机发光材料所发出的光与第一发光层的量子点所发出的光结合形成白光；
    其中，所述第一发光层与第二发光层之间的第一电子传输层与第二空穴传输层，分别把电荷产生层在电场作用下形成的电子和空穴传输到第一发光层和第二发光层，并分别与阳极及阴极注入的空穴和电子在第一发光层与第二发光层复合，产生不同的光色并结合形成白光；
    其中，所述电荷产生层包括形成于第一电子注入层上的第一电荷产生层与形成于第一电荷产生层上的第二电荷产生层，所述第一电荷产生层具有电子传输特性，所述第二电荷产生层具有空穴传输特性；
    其中，所述电荷产生层为p型有机半导体与n型有机半导体混合形成。
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