WO2016052929A1 - Light emitting diode comprising porous transparent electrode - Google Patents

Light emitting diode comprising porous transparent electrode Download PDF

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Publication number
WO2016052929A1
WO2016052929A1 PCT/KR2015/010113 KR2015010113W WO2016052929A1 WO 2016052929 A1 WO2016052929 A1 WO 2016052929A1 KR 2015010113 W KR2015010113 W KR 2015010113W WO 2016052929 A1 WO2016052929 A1 WO 2016052929A1
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WIPO (PCT)
Prior art keywords
transparent electrode
electrode layer
light emitting
layer
emitting diode
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PCT/KR2015/010113
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English (en)
French (fr)
Inventor
Chan Seob SHIN
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Seoul Viosys Co., Ltd.
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Publication of WO2016052929A1 publication Critical patent/WO2016052929A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Definitions

  • This patent document relates to a light emitting diode, and more particularly, to a light emitting diode that includes a porous transparent electrode to improve light extraction efficiency.
  • a light emitting diode refers to a semiconductor device that directly converts current into light based on a principle of emitting light through recombination of electrons from an n-region and holes from a p-region upon application of voltage to a p-n junction of semiconductors.
  • Luminous efficacy of a light emitting diode is generally determined by internal quantum efficiency and light extraction efficiency.
  • light extraction efficiency means a ratio of photons discharged to the outside of the light emitting diode, that is, to a free space, to photons emitted from an active layer, and low light extraction efficiency of the light emitting diode results in decrease of the number of photons discharged to the free space despite high internal quantum efficiency thereof, thereby causing significant deterioration in efficiency of the light emitting diode as a light source in practice.
  • light L1, L2 emitted from an active layer 2b is discharged outside through an upper semiconductor layer 2c and a transparent electrode 3.
  • the upper semiconductor layer 2c is formed of p-type GaN and the transparent electrode 3 is formed of indium tin oxide (ITO)
  • ITO indium tin oxide
  • light is refracted at interfaces due to a difference in index of refraction.
  • a refraction angle of light passing through an interface between the transparent electrode 3 and air is less than or equal to a critical angle
  • light can be emitted to the outside
  • the refraction angle of light like light L2 is greater than the critical angle
  • the light is trapped inside the interface instead of escaping to the outside.
  • a significant amount of light is trapped inside the light emitting diode due to total internal reflection, thereby causing significant deterioration in light extraction efficiency of the light emitting diode.
  • surface patterning of the transparent electrode layer is generally performed by a process such as electron-beam lithography, which has difficulty in formation of a large light emitting diode and increases process cost.
  • a process such as electron-beam lithography
  • semiconductor layers of the light emitting diode can be damaged by the high energy, thereby causing deterioration in reliability of the light emitting diode.
  • Exemplary embodiments provide a light emitting diode that can effectively reduce total internal reflection of light to improve light extraction efficiency.
  • a light emitting diode includes: a light emitting structure including a first conductive type semiconductor layer, an active layer disposed on the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed on the active layer; a first transparent electrode layer disposed on the light emitting structure to cover a portion of the light emitting structure and having a plurality of air gaps therein; a second transparent electrode layer disposed on the first transparent electrode layer and having a plurality of air gaps formed therein, the number or size of the air gaps formed in the second transparent electrode layer being greater or larger than that of the air gaps formed in the first transparent electrode layer; and an electrode disposed on the second transparent electrode layer corresponding to a location of the first transparent electrode layer, wherein the first transparent electrode layer has a higher specific resistance than the second transparent electrode layer.
  • the first transparent electrode layer or the second transparent electrode layer may be formed of ZnO, and the light emitting diode may further include a tunnel junction layer formed between the light emitting structure and the first transparent electrode layer and including at least one of NiO, Ga 2 O 3 and MgO.
  • the electrode may be partially embedded in the second transparent electrode layer.
  • the light emitting diode may further include a third transparent electrode layer interposed between the first and second transparent electrode layers and the light emitting structure, and having a plurality of air gaps formed therein, wherein the first transparent electrode layer has a higher specific resistance than the third transparent electrode layer.
  • the first transparent electrode layer may be formed in a predetermined pattern on the light emitting structure, and the predetermined pattern of the first transparent electrode layer may have at least one shape selected from among circular, hexagonal, quadrangular and triangular shapes.
  • the light emitting diode may further include an electrode extension extending from the electrode, wherein the pattern of the first transparent electrode layer may correspond to shapes of the electrode and the electrode extension.
  • the number or size of the air gaps may gradually increase from the light emitting structure towards the electrode.
  • the light emitting diode includes a transparent electrode layer having air gaps, the number or size of which gradually increases in the upward direction, such that the index of refraction gradually decreases along the transparent electrode layer, thereby improving light extraction efficiency of the light emitting diode.
  • the light emitting diode includes an electrode formed on the transparent electrode layer or at a portion formed by partially etching the transparent electrode layer, thereby facilitating vertical current spreading.
  • a current blocking layer is formed of the same material as the transparent electrode layer while adjusting specific resistance thereof in order to reduce light loss by preventing light emitted from the light emitting structure from being reflected by the current blocking layer, and is formed on the transparent electrode layer to allow more effective current spreading.
  • Figure 1 is a sectional view of a typical light emitting diode.
  • Figure 2 is a sectional view of a light emitting diode according to a first exemplary embodiment.
  • Figure 3 is sectional views of a transparent electrode layer of the light emitting diode according to the first exemplary embodiment, and modifications thereof.
  • Figure 4 is sectional views of a transparent electrode layer of a light emitting diode according to a second exemplary embodiment, and modifications thereof.
  • Figure 5 is sectional views of a transparent electrode layer of a light emitting diode according to a third exemplary embodiment, and modifications thereof.
  • Figure 6 is a plan view of one example of the first transparent electrode layer of the light emitting diode according to the third exemplary embodiment.
  • Figure 2 is a sectional view of a light emitting diode according to a first exemplary embodiment
  • Figure 3(a) is an enlarged sectional view of a transparent electrode layer of the light emitting diode according to the first exemplary embodiment.
  • the light emitting diode includes a substrate 10, a light emitting structure 20, a transparent electrode layer 30, a first electrode 41, and a second electrode 43.
  • the substrate 10 any substrate may be used without limitation so long as the substrate allows growth of the light emitting structure 20 thereon.
  • the substrate 10 may be a sapphire substrate, a SiC substrate, a spinel substrate, a Si substrate, or a gallium nitride substrate.
  • the substrate 10 may have a predetermined pattern formed on an upper surface thereof, like a patterned sapphire substrate (PSS).
  • the light emitting diode may further include a buffer layer formed on the substrate 10 to act as a nucleus layer for growth of the light emitting structure 20, thereby improving crystallinity of each of semiconductor layers of the light emitting structure 20.
  • the light emitting structure 20 is disposed on the substrate 10, and includes a first conductive type semiconductor layer 21, an active layer 23 and a second conductive type semiconductor layer 25.
  • the second conductive type semiconductor layer 25 is disposed on the first conductive type semiconductor layer 21 and the active layer 23 may be interposed between the first conductive type semiconductor layer 21 and the second conductive type semiconductor layer 25.
  • Each of the first conductive type semiconductor layer 21 and the second conductive type semiconductor layer 25 may include a III-V-based compound semiconductor, for example a nitride-based semiconductor such as (Al, Ga, In)N.
  • the first conductive type semiconductor layer 21 may include an n-type semiconductor layer doped with an n-type dopant such as Si
  • the second conductive type semiconductor layer 25 may include a p-type semiconductor layer doped with a p-type dopant such as Mg.
  • these dopants used in the first conductive type semiconductor layer 21 and the second conductive type semiconductor layer 25 may also be interchanged.
  • each of the first conductive type semiconductor layer 21 and the second conductive type semiconductor layer 25 may be composed of a single layer or multiple layers.
  • the first conductive type semiconductor layer 21 and/or the second conductive type semiconductor layer 25 may include a clad layer and a contact layer, and may also include a super-lattice layer.
  • the active layer 23 may include a multi-quantum well (MQW) structure, and elements constituting the multi-quantum well structure and the composition thereof may be adjusted to allow the multi-quantum well structure to emit light having a desired peak wavelength.
  • a well layer of the active layer 23 may be a tertiary semiconductor layer such as InGaN or a quaternary semiconductor layer such as AlInGaN, where a composition ratio of components may be adjusted to emit light having a desired peak wavelength.
  • Each of the first conductive type semiconductor layer 21, the active layer 23, and the second conductive type semiconductor layer 25 may be grown on a growth substrate by a technique such as metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) or hydride vapor phase epitaxy (HVPE).
  • MOCVD metal organic chemical vapor deposition
  • MBE molecular beam epitaxy
  • HVPE hydride vapor phase epitaxy
  • the first conductive type semiconductor layer 21 may be subjected to patterning by a photolithography and etching process so as to expose some region thereof.
  • the transparent electrode layer 30 is disposed on the second conductive type semiconductor layer 25.
  • the transparent electrode layer 30 serves to increase a luminous area by dispersing electric current delivered to the light emitting diode, and in the first exemplary embodiment, the transparent electrode layer 30 may include a conductive material, for example, ZnO.
  • the transparent electrode layer 30 includes a plurality of air gaps G, as shown in Figure 2.
  • the air gaps G formed in the transparent electrode layer 30 are filled with air and may be separated from each other or connected to each other, as shown in Figure 2.
  • the air gaps G may have a circular or hexagonal cross-section.
  • the air gaps G may be formed in the transparent electrode layer 30 such that the number or size thereof gradually increases from a lower side to an upper side of the transparent electrode layer 30 (in a direction from the second conductive type semiconductor layer 25 to the second electrode 43).
  • the air gaps G are formed in the transparent electrode layer 30 while adjusting the density of the air gaps G such that the number or size of the air gaps gradually increases from the lower side to the upper side of the transparent electrode layer 30, thereby improving light extraction efficiency of the light emitting diode.
  • the air gaps G are formed in the transparent electrode layer 30 such that the number or size of the air gaps gradually increases from the lower side to the upper side of the transparent electrode layer 30, thereby minimizing total internal reflection of the light emitting diode. As the number or size of the air gaps G in the transparent electrode layer 30 increases, the index of refraction inside the transparent electrode layer 30 is reduced.
  • a sol-gel material prepared by mixing nano-structures is used to form the air gaps in the transparent electrode layer 30.
  • the sol-gel material is formed by mixing the nano-structures with ZnO, which is used as a raw material for the transparent electrode layer 30 in the first exemplary embodiment.
  • the nano-structures may be nano-spheres having a particle diameter of 0.1 um to 3 um.
  • distribution of the nano-structures may be adjusted depending upon the location of the transparent electrode layer 30 to obtain a desired number or size of the air gaps G. Then, the nano-structures may be removed through selective use of calcination to form the plurality of air gaps in the transparent electrode layer 30.
  • the second electrode 43 is formed on the transparent electrode layer 30 and the first electrode 41 is disposed on an exposed region of the first conductive type semiconductor layer 21.
  • the second electrode 43 is electrically connected to the second conductive type semiconductor layer 25 through the transparent electrode layer 30 and the first electrode 41 is electrically connected to the first conductive type semiconductor layer 21.
  • a vertical light emitting diode includes a transparent electrode layer 30 having air gaps G formed therein to minimize total internal reflection, thereby improving light extraction efficiency.
  • the light emitting diode may further include a tunnel junction layer (not shown) between the light emitting structure 20 and the transparent electrode layer 30.
  • the tunnel junction layer is formed to a thin thickness on the light emitting structure 20 to improve ohmic contact between the transparent electrode layer 30 and the light emitting structure 20, and may include at least one of NiO, Ga 2 O 3 and MgO.
  • Figure 3(b) is a sectional view of one modification of the transparent electrode layer of the light emitting diode according to the first exemplary embodiment.
  • the transparent electrode layer 30 includes a first transparent electrode layer 31 and a second transparent electrode layer 33.
  • the first transparent electrode layer 31 may be disposed on the second conductive type semiconductor layer 25 and the second transparent electrode layer 33 may be disposed on the first transparent electrode layer 31.
  • the second transparent electrode layer 33 may have a larger number or size of air gaps G than the first transparent electrode layer 31. Accordingly, the number or size of the air gaps G gradually increases in the upward direction.
  • the transparent electrode layer may include a third transparent electrode layer 35, which is formed on the second transparent electrode layer 33 and has a larger number or size of air gaps G than the second transparent electrode layer 33.
  • the second electrode 43 may be formed on the second transparent electrode layer 33 and electrically connected to the second conductive type semiconductor layer 25.
  • Figure 3(c) is a sectional view of another modification of the transparent electrode layer of the light emitting diode according to the first exemplary embodiment.
  • the transparent electrode layer 30 may be formed such that the number or size of the air gaps G gradually increases from the lower side to the upper side of the transparent electrode layer (in the direction from the second conductive type semiconductor layer 25 to the second electrode 43).
  • the transparent electrode layer 30 may be partially removed by etching such that the second electrode 43 is partially embedded in the transparent electrode layer 30. In this way, with the structure wherein the second electrode 43 is disposed on an etched region of the transparent electrode layer 30 formed by partial etching, a length of a current path can be decreased in the vertical direction, thereby providing an advantage in current spreading.
  • Figure 4(a) is a sectional view of a transparent electrode layer of a light emitting diode according to a second exemplary embodiment.
  • a light emitting diode includes a substrate 10, a light emitting structure 20, a first transparent electrode layer 31, a second transparent electrode layer 33, a first electrode 41 and a second electrode 43, and descriptions of the same features as those of the first exemplary embodiment will be omitted.
  • the first transparent electrode layer 31 is disposed on the second conductive type semiconductor layer 25 of the light emitting structure 20.
  • the first transparent electrode layer 31 may be formed only on some region of the second conductive type semiconductor layer 25.
  • the second transparent electrode layer 33 is formed on the second conductive type semiconductor layer 25 to cover the first transparent electrode layer 31.
  • the first transparent electrode layer 31 has a higher specific resistance than the second transparent electrode layer 33, and each of the first transparent electrode layer 31 and the second transparent electrode layer 33 includes ZnO such that ZnO of the first transparent electrode layer 31 has a higher specific resistance than ZnO of the second transparent electrode layer 33.
  • the second electrode 43 is formed on the second transparent electrode layer 33 above the first transparent electrode layer 31.
  • the first transparent electrode layer 31 acts as a current blocking layer (CBL) in the second exemplary embodiment.
  • both the first transparent electrode layer 31 and the second transparent electrode layer 33 include the same material, that is, ZnO, and the first transparent electrode layer 31 has a higher specific resistance than the second transparent electrode layer 31, electric current can flow through the current blocking layer in the vertical direction of the second electrode 43, thereby enabling more efficient current spreading.
  • air gaps G may be formed in the second transparent electrode layer 33 such that the number or size of the air gaps G gradually increases from a lower side of the second transparent electrode layer to an upper side thereof (in the direction from the second conductive type semiconductor layer 25 to the second electrode 43).
  • the light emitting diode according to the second exemplary embodiment may further include a tunnel junction layer (not shown) between the light emitting structure 20 and the first and second transparent electrode layers 31, 33.
  • the tunnel junction layer is formed to a thin thickness on the light emitting structure 20 to improve ohmic contact between the first and second transparent electrode layers 31, 33 and the light emitting structure 20, and may include at least one of NiO, Ga2O3 and MgO.
  • Figure 4(b) is a sectional view of one modification of the transparent electrode layer of the light emitting diode according to the second exemplary embodiment.
  • the transparent electrode layer 30 includes a first transparent electrode layer 31, a second transparent electrode layer 33, and a third transparent electrode layer 35.
  • the third transparent electrode layer 35 is disposed on the second conductive type semiconductor layer 25 of the light emitting structure 20, and the first transparent electrode layer 31 is formed on some region of the third transparent electrode layer 35.
  • the second transparent electrode layer 33 is formed on the third transparent electrode layer 35 to cover the first transparent electrode layer 31. Accordingly, the second transparent electrode layer 33 contacts a region of the third transparent electrode layer 35 in which the first transparent electrode layer 31 is not formed.
  • the second transparent electrode layer 33 has a larger number or size of air gaps G than the third transparent electrode layer 35. Further, the first transparent electrode layer 31 is formed to have a higher specific resistance than the second transparent electrode layer 33 and the third transparent electrode layer 35. In this modification of the second exemplary embodiment, since the first to third transparent electrode layers 31, 33, 35 include ZnO, the first transparent electrode layer 31 acts as a current blocking layer. That is, the second electrode 43 is formed on the second transparent electrode layer 33 above the first transparent electrode layer 31.
  • the tunnel junction layer (not shown) may be interposed between the third transparent electrode layer 35 and the light emitting structure 20.
  • Figure 4(c) is a sectional view of another modification of the transparent electrode layer of the light emitting diode according to the second exemplary embodiment.
  • the second transparent electrode layer 33 is partially removed by etching to expose a portion of the first transparent electrode layer 31, and the second electrode 43 is formed on an exposed region of the first transparent electrode layer 31.
  • the second electrode 43 directly contacts the first transparent electrode layer 31.
  • the first transparent electrode layer 31 includes ZnO, electric current can flow therethrough in the vertical direction. Since electric current can flow in the vertical direction of the second electrode 43, current spreading in the horizontal direction becomes more efficient.
  • Figure 5(a) is a sectional view of a transparent electrode layer of a light emitting diode according to a third exemplary embodiment.
  • a transparent electrode layer 30 of a light emitting diode includes a first transparent electrode layer 31 and a second transparent electrode layer 33.
  • the first transparent electrode layer 31 is formed in a predetermined pattern on a second conductive type semiconductor layer 25 of the light emitting structure 20.
  • the first transparent electrode layer 31 is formed on some region of the second conductive type semiconductor layer 25, or on an overall region thereof.
  • the first transparent electrode layer 31 may be formed in a pattern having at least one shape selected from among circular, hexagonal, quadrangular and triangular shapes on the second conductive type semiconductor layer 25. Further, the pattern of the first transparent electrode layer 31 may be changed in various ways, as needed. Modification of the pattern of the first transparent electrode layer 31 will be described below.
  • the second transparent electrode layer 33 is formed to cover the first transparent electrode layer 31 having the pattern formed thereon. Accordingly, the second transparent electrode layer 33 is formed to cover the first transparent electrode layer 31 while contacting a portion of the second conductive type semiconductor layer 25.
  • the second electrode 43 is formed on the second transparent electrode layer 33.
  • the first transparent electrode layer 31 may be formed at any location on the second transparent electrode layer 33.
  • the second electrode 43 may be formed on the second transparent electrode layer 33 above the first transparent electrode layer 31.
  • the first transparent electrode layer 31 acts as a current blocking layer (CBL).
  • the first transparent electrode layer 31 includes ZnO, specific resistance of which is higher than that of the second transparent electrode layer 33. Accordingly, electric current can easily pass through the first transparent electrode layer 31 formed of ZnO and having a predetermined pattern, thereby enabling easy current spreading.
  • air gaps G may be formed in the second transparent electrode layer 33 such that the number or size of the air gaps G gradually increases from a lower side of the second transparent electrode layer to an upper side thereof (in the direction from the second conductive type semiconductor layer 25 to the second electrode 43).
  • the light emitting diode according to the second exemplary embodiment may further include a tunnel junction layer (not shown) between the light emitting structure 20 and the first and second transparent electrode layers 31, 33.
  • the tunnel junction layer is formed to a thin thickness on the light emitting structure 20 to improve ohmic contact between the first and second transparent electrode layers 31, 33 and the light emitting structure 20, and may include at least one of NiO, Ga2O3 and MgO
  • Figure 5(b) is a sectional view of one modification of the transparent electrode layer of the light emitting diode according to the third exemplary embodiment.
  • the transparent electrode layer 30 includes a first transparent electrode layer 31 and a second transparent electrode layer 33.
  • the second transparent electrode layer 33 is partially removed by etching so as to expose a portion of the first transparent electrode layer 31 having a predetermined pattern, and the second electrode 43 is formed on an exposed region of the first transparent electrode layer 31.
  • the second electrode 43 can contact the partially exposed region of the first transparent electrode layer 31.
  • air gaps G may be formed in the second transparent electrode layer 33 such that the number or size of the air gaps G gradually increases from the lower side of the second transparent electrode layer to the upper side thereof (in the direction from the second conductive type semiconductor layer 25 to the second electrode 43).
  • Figure 5(c) is a sectional view of another modification of the transparent electrode layer of the light emitting diode according to the third exemplary embodiment.
  • the transparent electrode layer 30 includes a first transparent electrode layer 31, a second transparent electrode layer 33, and a third transparent electrode layer 35.
  • the third transparent electrode layer 35 is disposed on the second conductive type semiconductor layer 25 of the light emitting structure 20, and the first transparent electrode layer 31 is formed in a predetermined pattern on the third transparent electrode layer 35.
  • the first transparent electrode layer 31 is formed on some region of the third transparent electrode layer 35, or on an overall region thereof.
  • the second transparent electrode layer 33 is formed on the third transparent electrode layer 35 to cover the first transparent electrode layer 31. Accordingly, the second transparent electrode layer 33 contacts a region of the third transparent electrode layer 35 in which the first transparent electrode layer 31 is not formed.
  • the first transparent electrode layer 31 may be formed in at least one shape selected from among circular, hexagonal, quadrangular and triangular shapes on the third transparent electrode layer 35. Further, the pattern of the first transparent electrode layer 31 may be changed in various ways, as needed.
  • the second electrode 43 is formed on the second transparent electrode layer 33.
  • the first transparent electrode layer 31 may be formed at any location on the second transparent electrode layer 33.
  • the second electrode 43 may be formed on the second transparent electrode layer 33 above the first transparent electrode layer 31.
  • the first transparent electrode layer 31 acts as a current blocking layer (CBL).
  • the first transparent electrode layer 31 includes ZnO, specific resistance of which is higher than that of the second transparent electrode layer 33. Accordingly, electric current can easily pass through the first transparent electrode layer 31 formed of ZnO and having a predetermined pattern, thereby enabling easy current spreading.
  • the second transparent electrode layer 33 has a larger number or size of air gaps G than the third transparent electrode layer 35.
  • Figure 5(d) is a sectional view of a further modification of the transparent electrode layer of the light emitting diode according to the third exemplary embodiment.
  • the transparent electrode layer 30 includes a first transparent electrode layer 31, a second transparent electrode layer 33, and a third transparent electrode layer 35.
  • the third transparent electrode layer 35 is disposed on the second conductive type semiconductor layer 25 of the light emitting structure 20, and the first transparent electrode layer 31 is formed in a predetermined pattern on the third transparent electrode layer 35.
  • the first transparent electrode layer 31 is formed on some region of the third transparent electrode layer 35, or on an overall region thereof.
  • the second transparent electrode layer 33 is formed on the third transparent electrode layer 35 to cover the first transparent electrode layer 31. Accordingly, the second transparent electrode layer 33 contacts a region of the third transparent electrode layer 35 in which the first transparent electrode layer 31 is not formed.
  • the second transparent electrode layer 33 is partially removed by etching so as to expose a portion of the first transparent electrode layer 31.
  • the second electrode 43 may be formed on an exposed region of the first transparent electrode layer 31 and contact the exposed region of the first transparent electrode layer 31.
  • the pattern of the first transparent electrode layer 31 is the same as that of the first transparent electrode layer 31 according to the third exemplary embodiment described above, and the second transparent electrode layer 33 and the third transparent electrode layer 35 are the same as those of the other modifications of the third exemplary embodiment.
  • a tunnel junction layer (not shown) may be interposed between the third transparent electrode layer 35 and the light emitting structure 20.
  • Figure 6 is a plan view of one example of the first transparent electrode layer 31 having a predetermined pattern in the third exemplary embodiment.
  • the pattern of the first transparent electrode layer 31 may have at least one shape selected from among circular, hexagonal, quadrangular and triangular shapes, and may be formed along the second electrode 43 and an electrode extension 43a, as shown in Figure 6.
  • the electrode extension 43a extends from the second electrode 43 to disperse electric current crowding at the second electrode 43.
  • the second electrode 43 and the electrode extension 43a are formed on the second transparent electrode layer 33.
  • the first transparent electrode layer 31 may be formed in the same pattern as the second electrode 43 and the electrode extension 43a.
  • the first transparent electrode layer 31 is formed in the same size and the same shape as the second electrode 43 and the electrode extension 43a, and is disposed along the second electrode 43 and the electrode extension 43a under the second transparent electrode layer 33. Accordingly, the first transparent electrode layer 31 allows electric current from the second electrode 43 and the electrode extension 43a to easily pass therethrough, thereby enabling easier current spreading in the horizontal direction.

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PCT/KR2015/010113 2014-09-29 2015-09-24 Light emitting diode comprising porous transparent electrode WO2016052929A1 (en)

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KR1020140130104A KR102264678B1 (ko) 2014-09-29 2014-09-29 다공성 투명 전극을 포함하는 발광 소자
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WO2021229356A1 (en) * 2020-05-11 2021-11-18 Silanna UV Technologies Pte Ltd Metal oxide semiconductor-based light emitting device
US11489090B1 (en) 2021-11-10 2022-11-01 Silanna UV Technologies Pte Ltd Epitaxial oxide field effect transistor
US11502223B1 (en) 2021-11-10 2022-11-15 Silanna UV Technologies Pte Ltd Epitaxial oxide materials, structures, and devices

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