WO2016019637A1 - Oled显示器件及其制作方法、显示装置 - Google Patents

Oled显示器件及其制作方法、显示装置 Download PDF

Info

Publication number
WO2016019637A1
WO2016019637A1 PCT/CN2014/089550 CN2014089550W WO2016019637A1 WO 2016019637 A1 WO2016019637 A1 WO 2016019637A1 CN 2014089550 W CN2014089550 W CN 2014089550W WO 2016019637 A1 WO2016019637 A1 WO 2016019637A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
display device
auxiliary electrode
auxiliary
layer
Prior art date
Application number
PCT/CN2014/089550
Other languages
English (en)
French (fr)
Inventor
程鸿飞
乔勇
卢永春
先建波
Original Assignee
京东方科技集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US14/768,956 priority Critical patent/US9818971B2/en
Publication of WO2016019637A1 publication Critical patent/WO2016019637A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • Embodiments of the present invention relate to an OLED display device, a method of fabricating the same, and a display device.
  • OLED Organic Light Emitting Diode
  • LCD Organic Light Emitting Diode
  • the organic light-emitting device comprises an anode, a cathode and an organic functional layer.
  • the main working principle is that the carrier is injected into the organic functional layer and composited therein to emit light under the driving of the electric field formed by the anode and the cathode.
  • At least one embodiment of the present invention provides an OLED display device, a method for fabricating the same, and a display device, which overcome the problem of large voltage drop and uneven brightness due to large transmission resistance of the cathode in the OLED display device.
  • At least one embodiment of the present invention provides an OLED display device including: a thin film transistor, a first electrode, a second electrode, an organic functional layer between the first electrode and the second electrode, formed by a topological insulator a first auxiliary electrode, wherein the thin film transistor includes a gate, a source and a drain, the first electrode is electrically connected to the drain; the first auxiliary electrode is electrically connected to the second electrode, An electrical signal is provided to the second electrode.
  • At least one embodiment of the present invention provides a method of fabricating an OLED display device, including: forming a thin film transistor including forming a gate, a source, and a drain of a thin film transistor; forming a first electrode, the first electrode and the first electrode a drain electrical connection; forming an organic functional layer and forming a second electrode; forming a first auxiliary electrode electrically connected to the second electrode by using a topological insulator, the first auxiliary electrode for supplying an electrical signal to the second electrode .
  • At least one embodiment of the present invention provides a display device including an array substrate and a package substrate, wherein the array substrate and the package substrate are formed with any of the OLED displays provided by the embodiments of the present invention. Device.
  • 1 is a schematic view of an OLED display device
  • FIG. 2 is a schematic diagram of an OLED display device according to an embodiment of the present invention.
  • FIG. 3 is a schematic diagram of a method for fabricating an OLED display device according to an embodiment of the present invention.
  • FIG. 4 is a schematic diagram of a method for forming a first auxiliary electrode according to an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of an OLED display device according to an embodiment of the present disclosure.
  • FIG. 6 is a schematic diagram of another OLED display device according to an embodiment of the present disclosure.
  • FIG. 7 is a schematic diagram of another OLED display device according to an embodiment of the present invention.
  • 10-package substrate 11-second substrate; 12-black matrix layer; 13-color film layer; 14-protective layer; 15- spacer; 20-array substrate; 21-first substrate; Transistor; 221-gate; 222-source; 223-drain; 23-anode; 23'-first electrode; 24-pixel defining layer; 25-organic functional layer; 26-cathode; 26'-second electrode 27-first auxiliary electrode; 28-second auxiliary electrode; 30-filled layer.
  • FIG. 1 illustrates an OLED display including: an aligned array substrate 20 and a package substrate 10.
  • the array substrate 20 includes a first substrate 21, a thin film transistor 22 (including a gate electrode 221, a source stage 222, and a drain 223), an anode 23 connected to the drain electrode 223 of the thin film transistor 22, and an organic functional layer above the anode 23. 25.
  • the package substrate 10 includes a second substrate 11.
  • a color film layer 13, a black matrix layer 12, and a protective layer 14; a filler 30 is disposed between the array substrate 20 and the package substrate 10.
  • the organic functional layer 25 can be further subdivided into a hole transport functional layer (HTL), an illuminating functional layer (EML), an electron transport functional layer (ETL), and the like.
  • HTL hole transport functional layer
  • EML illuminating functional layer
  • ETL electron transport functional
  • the cathode 26 of the OLED display is generally prepared by using a thin layer of metallic silver
  • the anode 23 is generally prepared by using ITO (Indium tin oxide).
  • ITO Indium tin oxide
  • the inventors have found that due to the high resistivity of the thin layer of metallic silver and ITO, especially for the large-area shaped cathode 26, the cathode prepared by the thin layer of metallic silver has a large resistivity and a large IR drop.
  • the actual driving voltage of the OLED device is greatly different from the power supply voltage. On a large-sized OLED display, a large area of brightness is uneven, which affects the display effect.
  • Topological insulators are a new form of matter that has recently been recognized.
  • the physical energy band structure of the topological insulator has a finite size energy gap at the Fermi level, but at its boundary or surface, it is energy-free, Dirac type, spin non-degenerate.
  • the conductive edge state which is the most unique property that distinguishes it from ordinary insulators. Moreover, such a conductive edge state is stable, and the transmission of information can be through the spin of electrons, unlike the charge of a conventional material. Therefore, the topological insulator has better conductivity and does not involve dissipation or no heat.
  • the OLED display device includes a thin film transistor 22, a first electrode 23' (eg, an anode), a second electrode 26' (eg, a cathode), and An organic functional layer 25 between the first electrode 23' and the second electrode 26'.
  • the thin film transistor 22 includes a gate electrode 221, a source electrode 222, and a drain electrode 223, and the first electrode 23' is electrically connected to the drain electrode 223.
  • the display device further includes a first auxiliary electrode 27 formed of a topological insulator, the first auxiliary electrode 27 being electrically coupled to the second electrode 26' to provide an electrical signal to the second electrode 26'.
  • the first electrode 23' and the second electrode 26' are an anode and a cathode, respectively, that is, when the first electrode 23' is an anode, the second electrode 26' is a cathode; or, when the first electrode 23' is a cathode, The second electrode 26' is an anode.
  • the invention is not specifically limited. In the embodiment of the present invention, as shown in Fig. 2, the first electrode 23' is used as an anode, and the second electrode 26' is a cathode as an example.
  • An OLED display device uses a topological insulator to form a first auxiliary electrode, and provides an electrical signal to the second electrode through the first auxiliary electrode, which is beneficial to reducing a voltage drop of the second electrode, thereby enabling The brightness of the display is even.
  • the topological insulator does not generate heat for a long time, which is advantageous for long-time display of the display device.
  • the thin film transistor includes a gate, a source, and a drain.
  • the thin film transistors are classified into two types according to the positional relationship of the above electrodes.
  • One type is the thin film transistor 22 shown in FIG. 2, the gate 221 is located under the source 222 and the drain 223, and this type is called a bottom gate type thin film transistor; the other is a gate at the source and the drain. Above, this type is called a top gate type thin film transistor.
  • the thin film transistor in the display device according to at least one embodiment of the present invention may be a bottom gate type thin film transistor or a top gate type thin film transistor. As shown in FIG. 2, in the embodiment of the present invention, the thin film transistor 22 is used as a bottom gate type.
  • the thin film transistor will be described in detail as an example.
  • the first auxiliary electrode 27 is a two-dimensional nanostructured topological insulator.
  • the topological insulator of the two-dimensional nanostructure is a nanometer-sized film formed by a topological insulator, and may be a two-dimensional nano film formed by a topological insulator, a two-dimensional nanosheet, a two-dimensional nanobelt, or the like.
  • the topological insulator of two-dimensional nanostructure has the ultra-high specific surface area and the controllability of the energy band structure, which can significantly reduce the proportion of bulk carriers and highlight the topological surface state, and thus the conductivity is better.
  • the topological insulator of the two-dimensional nanostructure is more suitable for the display device because of its high flexibility similar to the graphene structure and the high transmittance which is invisible to the naked eye.
  • the topological insulator includes HgTe, Bi x Sb 1-x , Sb 2 Te 3 , Bi 2 Te 3 , Bi 2 Se 3 , T l BiTe 2 , T l BiSe 2 , Ge 1 Bi 4 Te 7 , Ge 2 Bi 2 At least one of Te 5 , Ge 1 Bi 2 Te 4 , AmN, PuTe, a single layer of tin, and a single layer of tin variant material.
  • Ge 1 Bi 4 Te 7 , Ge 2 Bi 2 Te 5 and Ge 1 Bi 2 Te 4 are chalcogenides.
  • AmN and PuTe belong to topological insulators with strong interactions.
  • the topological insulator can also be other materials such as a ternary Hessler compound.
  • the topological insulator may include HgTe, Bi x Sb 1-x , Sb 2 Te 3 , Bi 2 Te 3 , Bi 2 Se 3 , T l BiTe 2 , T l BiSe 2 , Ge 1 Bi 4 Te 7 , Ge 2 Bi At least one of 2 Te 5 , Ge 1 Bi 2 Te 4 , AmN, PuTe, single-layer tin, and a single-layer tin variant material, that is, the topological insulator may be HgTe or Bi x Sb 1-x or Sb 2 Te 3 or Bi 2 Te 3 or Bi 2 Se 3 or T l BiTe 2 or T l BiSe 2 or Ge 1 Bi 4 Te 7 or Ge 2 Bi 2 Te 5 or Ge 1 Bi 2 Te 4 or AmN or PuTe or a single layer of tin or single Layer tin variant material.
  • It may also be a mixed material formed of a plurality of the above materials, and for example, may be a mixed material formed of two of the above materials. Of course, it is also possible to form a mixed material or the like of three of the above materials. And when the topological insulator is a mixed material formed of at least two materials, it is also possible to improve the characteristics of the material after mixing by selecting materials having complementary characteristics.
  • the topological insulator can also be a single layer of tin or a single layer of tin variant material.
  • Single layer tin is only A two-dimensional material with a thickness of tin atom, the level of the thickness of the atomic layer makes it have a good light transmittance; similar to graphene, it has good toughness and high transmittance.
  • a single layer of tin atoms can reach 100% at room temperature and may become a superconductor material.
  • a single layer of tin variant material is formed by surface modification or magnetic doping of a single layer of tin.
  • Surface modification of a single layer of tin may be accomplished by adding functional groups such as -F, -Cl, -Br, -I and -OH to a single layer of tin.
  • the single-layer tin variant material is a tin-fluoride compound formed by surface modification of a single layer of tin with fluorine (F) atoms.
  • F fluorine
  • the first auxiliary electrode 27 is strip-shaped, and the display device includes a plurality of first auxiliary electrodes 27.
  • the voltage drop of the second electrode can be reduced by providing an electrical signal to the second electrode by the plurality of first auxiliary electrodes, respectively.
  • the auxiliary electrode may also be a surface electrode, and the voltage drop of the second electrode is also reduced because the transmission resistance of the auxiliary electrode is smaller than the transmission resistance of the second electrode.
  • At least one embodiment of the present invention provides a method for fabricating an OLED display device. As shown in FIG. 3, the method includes:
  • Step 101 forming a thin film transistor.
  • Forming a thin film transistor includes forming a gate, a source, and a drain.
  • a gate is formed first, and a source and a drain are formed on the gate.
  • a source and a drain are formed first, and a gate is formed on the source and the drain.
  • Step 102 forming a first electrode.
  • the first electrode is electrically connected to the drain.
  • the first electrode can be an anode, which can generally be formed using ITO.
  • Step 103 forming an organic functional layer and forming a second electrode.
  • the first electrode and the second electrode are an anode and a cathode, respectively.
  • the first electrode is an anode
  • the second electrode is a cathode
  • the cathode can generally be formed of metallic silver.
  • the organic functional layer may be formed by sequentially forming a hole transport functional layer (HTL layer), a hole injection functional layer (HIL layer), a light emitting functional layer (EML layer), an electron transport functional layer (ETL layer), and an electron injection functional layer ( The EIL layer) and the like are not described in the embodiment of the present invention.
  • HTL layer hole transport functional layer
  • HIL layer hole injection functional layer
  • EML layer light emitting functional layer
  • ETL layer electron transport functional layer
  • the EIL layer electron injection functional layer
  • Step 104 Form a first auxiliary electrode electrically connected to the second electrode by using a topological insulator.
  • the first auxiliary electrode is configured to provide an electrical signal to the second electrode.
  • the above step 104 includes:
  • Step 1041 Perform pattern etching on the substrate to form a pattern corresponding to the first auxiliary electrode.
  • the substrate may be mica, may also be SrTiO 3 (111), and other substrates on which the topological insulator film can be grown by molecular beam epitaxy.
  • the substrate is mica as an example for detailed description.
  • the substrate is patterned and etched to form a pattern corresponding to the first auxiliary electrode, and the same mica plate as the first auxiliary electrode pattern may be used, and the mica substrate is plasma etched under the mask of the mask. A patterned mica substrate identical to the first auxiliary electrode pattern is obtained.
  • Step 1042 forming a thin film of a topological insulator on the surface of the patterned substrate.
  • a Bi 2 Se 3 film is grown by molecular beam epitaxy on the surface of the patterned mica substrate.
  • other topological insulator films can also be grown.
  • the top insulator is Bi 2 Se 3 as an example for detailed description.
  • Step 1043 removing the substrate to obtain a first auxiliary electrode pattern formed by a topological insulator.
  • the mica substrate is dissolved to obtain a first auxiliary electrode pattern formed by a topological insulator.
  • Step 1044 attaching the first auxiliary electrode pattern to the corresponding first auxiliary electrode region to be electrically connected to the second electrode.
  • the first auxiliary electrode pattern is attached to the corresponding first auxiliary electrode region to be electrically connected to the second electrode.
  • an adhesive layer may be formed on one surface of the first auxiliary electrode, and the first auxiliary electrode may be pasted. Attached to the first auxiliary electrode region to be electrically connected to the second electrode.
  • the method of forming the first auxiliary electrode is not limited to the above steps, and the embodiment of the present invention is only described in detail by way of example.
  • At least one embodiment of the present invention provides a display device, as shown in FIG. 5, including an array substrate 20 and a package substrate 10, wherein the array substrate 20 and the package substrate 10 are formed with any of the embodiments provided by at least one embodiment of the present invention.
  • An OLED display device as described.
  • a filling layer 30 is further disposed between the array substrate 20 and the package substrate 10 .
  • the fill layer 30 can be used to relieve pressure between the substrates.
  • the thin film transistor 22, the first electrode (anode 23), the second electrode (cathode 26), the organic functional layer 25, and the first auxiliary electrode 27 are formed in On the array substrate 20, a first auxiliary electrode 27 is formed on the upper surface of the second electrode 26' (cathode), and is electrically connected in direct contact with the second electrode 26' (cathode).
  • first auxiliary electrodes 27 may be formed directly on the second electrode to provide an electrical signal to the second electrode through the first auxiliary electrode to reduce the voltage drop of the second electrode.
  • the first auxiliary electrode shown in FIG. 5 is a strip electrode, and may of course be a planar electrode.
  • the “upper” and “lower” in the embodiments of the present invention are based on the order in which the film or pattern is manufactured.
  • the film or pattern on the film refers to the film or pattern formed later
  • the film or pattern underneath is Refers to a film or pattern formed earlier than the previous one.
  • a thin film transistor 22 a first electrode 23' (anode), a second electrode 26' (cathode), and an organic functional layer 25 are formed on the array substrate 20, first The auxiliary electrode 27 is formed on the package substrate 10.
  • the package substrate 10 includes a second substrate 11 and a color film layer 13, a black matrix layer 12, a protective layer 14, and a spacer 15 formed on the second substrate 11.
  • the first auxiliary electrode is formed on the package substrate 10, and may be formed on the upper surface of the protective layer 14 as shown in FIG. It should be noted that, when a spacer is further formed on the package substrate, when the first auxiliary electrode is in a strip shape, the position of the first auxiliary electrode and the spacer is shifted to reduce the thickness of the package substrate.
  • the spacer 15 is formed on the upper surface of the protective layer 14, and when the first auxiliary electrode 27 is formed on the upper surface of the protective layer 14, the first auxiliary electrode 27 and the spacer 15 are located on the same layer and are staggered in position. .
  • first auxiliary electrode 27 may be formed under the protective layer 14 or directly on the second substrate 11, and then electrically connected to the second electrode 26' (cathode) through the via hole.
  • the examples shown in Figs. 6 and 7 will be described in detail.
  • the first auxiliary electrode shown in FIG. 6 is a planar electrode, and may of course be a strip electrode.
  • a second auxiliary electrode 28 is further formed on the package substrate 10.
  • the first auxiliary electrode 27 is strip-shaped, it is electrically connected to the second electrode 26' (cathode) through the second auxiliary electrode 28.
  • a black matrix 12 is formed on the package substrate 10.
  • the first auxiliary electrode 27 is strip-shaped, the first auxiliary electrode 27 is located at a corresponding position of the black matrix 12.
  • the transparent first auxiliary electrode formed by the topological insulator may also be located at a corresponding position of the color film region between the black matrices.
  • the first auxiliary electrode is preferably located at the corresponding position of the black matrix. Detailed instructions are given.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种OLED显示器件及其制作方法、显示装置，OLED显示器件，包括：薄膜晶体管（22）、第一电极（23'）、第二电极（26'）以及位于第一电极（23'）和第二电极（26'）之间的有机功能层（25）。薄膜晶体管（22）包括栅极（221）、源极（222）和漏极（223），第一电极（23'）与漏极（223）电连接；显示器件还包括由拓扑绝缘体形成的第一辅助电极（27），第一辅助电极（27）与第二电极（26'）电连接，向第二电极（26'）提供电信号。OLED显示器件避免了由于阴极的传输电阻大，引起压降大、造成亮度不均。

Description

OLED显示器件及其制作方法、显示装置 技术领域
本发明的实施例涉及一种OLED显示器件及其制作方法、显示装置。
背景技术
有机发光器件(Organic Light Emitting Diode，OLED)显示器是新一代的显示器，与液晶显示器相比，具有很多优点如：自发光，响应速度快，宽视角等，还可以用于柔性显示，透明显示以及3D显示等。
有机发光器件包括阳极、阴极以及有机功能层，其主要的工作原理是在阳极和阴极所形成电场的驱动下，载流子注入有机功能层且在其中复合而发光。
发明内容
本发明至少一实施例提供一种OLED显示器件及其制作方法、显示装置，克服了OLED显示器件中由于阴极的传输电阻大，引起压降大、亮度不均的问题。
本发明至少一实施例提供了一种OLED显示器件，包括：薄膜晶体管、第一电极、第二电极、位于所述第一电极和所述第二电极之间的有机功能层、由拓扑绝缘体形成的第一辅助电极，其中，所述薄膜晶体管包括栅极、源极和漏极，所述第一电极与所述漏极电连接；所述第一辅助电极与所述第二电极电连接，向所述第二电极提供电信号。
本发明至少一实施例提供了一种OLED显示器件的制作方法，包括：形成薄膜晶体管，包括形成薄膜晶体管的栅极、源极和漏极；形成第一电极，所述第一电极与所述漏极电连接；形成有机功能层和形成第二电极；利用拓扑绝缘体形成与所述第二电极电连接的第一辅助电极，所述第一辅助电极用于向所述第二电极提供电信号。
本发明至少一实施例提供了一种显示装置，包括阵列基板和封装基板，所述阵列基板和封装基板形成有本发明实施例提供的任一所述的OLED显示 器件。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1为一种OLED显示装置示意图；
图2为本发明实施例提供的一种OLED显示器件示意图；
图3为本发明实施例提供的一种OLED显示器件制作方法示意图；
图4为本发明实施例提供的一种形成第一辅助电极的方法示意图；
图5为本发明实施例提供的一种OLED显示装置示意图；
图6为本发明实施例提供的另一种OLED显示装置示意图；
图7为本发明实施例提供的另一种OLED显示装置示意图。
附图标记：
10-封装基板；11-第二衬底；12-黑矩阵层；13-彩色膜层；14-保护层；15-隔垫物；20-阵列基板；21-第一衬底；22-薄膜晶体管；221-栅极；222-源极；223-漏极；23-阳极；23’-第一电极；24-像素界定层；25-有机功能层；26-阴极；26’-第二电极；27-第一辅助电极；28-第二辅助电极；30-填充层。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
图1示出了一种OLED显示器，该OLED显示器包括：对合的阵列基板20以及封装基板10。阵列基板20包括第一衬底21、薄膜晶体管22(包括栅极221、源级222和漏极223)、与薄膜晶体管22的漏极223连接的阳极23、位于阳极23之上的有机功能层25、位于阳极23和有机功能层25之间的像素界定层24、位于有机功能层25之上的阴极26。封装基板10包括第二衬底 11、彩色膜层13、黑矩阵层12以及保护层14；阵列基板20和封装基板10之间设置有填充物30。其中有机功能层25还可以进一步细分为：空穴传输功能层(HTL)、发光功能层(EML)、电子传输功能层(ETL)等。
如图1所示，OLED显示器的阴极26一般采用薄层金属银制备，阳极23一般采用ITO(Indium tin oxide，氧化铟锡)制备。发明人发现，由于薄层金属银以及ITO的电阻率较高，尤其是对于大面积成型的阴极26，采用薄层金属银制备的阴极电阻率较大，压降(IR drop)较大，造成OLED器件的实际驱动电压与电源电压有较大差异，在大尺寸的OLED显示器上，会造成大面积的亮度不均匀，影响显示效果。
拓扑绝缘体(topological insulator)是近年来新认识到的一种物质形态。拓扑绝缘体的体能带结构和普通绝缘体一样，都在费米能级处有一有限大小的能隙，但是在它的边界或表面却是无能隙的、狄拉克(Dirac)型、自旋非简并的导电的边缘态，这是它有别于普通绝缘体的最独特的性质。并且，这样的导电边缘态是稳定存在的，信息的传递可以通过电子的自旋，而不像传统材料通过电荷，因此，拓扑绝缘体的导电性能更好且不涉及耗散即不发热。
本发明至少一实施例提供了一种OLED显示器件，如图2所示，该OLED显示器件包括：薄膜晶体管22、第一电极23’(例如阳极)、第二电极26’(例如阴极)以及位于第一电极23’和所述第二电极26’之间的有机功能层25。薄膜晶体管22包括栅极221、源极222和漏极223，第一电极23’与漏极223电连接。
该显示器件还包括由拓扑绝缘体形成的第一辅助电极27，第一辅助电极27与第二电极26’电连接，向第二电极26’提供电信号。
例如，第一电极23’和第二电极26’分别为阳极和阴极，即当第一电极23’为阳极，则第二电极26’为阴极；或者，当第一电极23’为阴极，则第二电极26’为阳极。本发明不作具体限制。本发明实施例中，均以图2所示，以第一电极23’为阳极，第二电极26’为阴极为例进行详细说明。
本发明实施例提供的一种OLED显示器件，采用拓扑绝缘体形成第一辅助电极，且通过所述第一辅助电极向第二电极提供电信号，有利于减小第二电极的压降，进而使得显示的亮度均匀。且拓扑绝缘体导电时间长也不会发热，有利于显示器件的长时间进行显示。
薄膜晶体管包括栅极、源极和漏极。根据上述电极的位置关系将薄膜晶体管分为两类。一类是如图2所示的薄膜晶体管22，栅极221位于源极222和漏极223的下面，这类称之为底栅型薄膜晶体管；一类是栅极位于源极和漏极的上面，这类称之为顶栅型薄膜晶体管。本发明至少一实施例提供的显示器件中的薄膜晶体管可以底栅型薄膜晶体管也可以是顶栅型薄膜晶体管，如图2所示，本发明实施例中以所述薄膜晶体管22为底栅型薄膜晶体管为例进行详细说明。
例如，第一辅助电极27为二维纳米结构的拓扑绝缘体。二维纳米结构的拓扑绝缘体即由拓扑绝缘体形成的纳米尺寸厚度的膜，可以是由拓扑绝缘体形成的二维纳米薄膜、二维纳米薄片、二维纳米带等。二维纳米结构的拓扑绝缘体具有超高比表面积和能带结构的可调控性，能显著降低体态载流子的比例和凸显拓扑表面态，进而导电性能更好。
需要说明的是，二维纳米结构的拓扑绝缘体因其与石墨烯结构类似具有较高的柔韧性，以及基本肉眼不可见的高透过率，使其更适用于显示器件。
例如，拓扑绝缘体包括HgTe、BixSb1-x、Sb2Te3、Bi2Te3、Bi2Se3、TlBiTe2、TlBiSe2、Ge1Bi4Te7、Ge2Bi2Te5、Ge1Bi2Te4、AmN、PuTe、单层锡以及单层锡变体材料中的至少一种。
Ge1Bi4Te7、Ge2Bi2Te5以及Ge1Bi2Te4属于硫属化物。AmN以及PuTe属于具有强相互作用的拓扑绝缘体。当然，拓扑绝缘体还可以是三元赫斯勒化合物等其他材料。
例如，拓扑绝缘体可以包括HgTe、BixSb1-x、Sb2Te3、Bi2Te3、Bi2Se3、TlBiTe2、TlBiSe2、Ge1Bi4Te7、Ge2Bi2Te5、Ge1Bi2Te4、AmN、PuTe、单层锡以及单层锡变体材料中的至少一种，即拓扑绝缘体可以为HgTe或BixSb1-x或Sb2Te3或Bi2Te3或Bi2Se3或TlBiTe2或TlBiSe2或Ge1Bi4Te7或Ge2Bi2Te5或Ge1Bi2Te4或AmN或PuTe或单层锡或单层锡变体材料。还可以是上述材料中的多种形成的混合材料，例如可以是上述材料中的两种形成的混合材料。当然，也可以是上述材料中的三种形成的混合材料等。且当拓扑绝缘体为至少两种材料形成的混合材料，则还可以通过选择具有互补特性的材料混合，以提高混合后材料的特性。
例如，拓扑绝缘体也可以为单层锡或单层锡的变体材料。单层锡为只有 一个锡原子厚度的二维材料，原子层厚度的级别使其具有较好的光透过率；其与石墨烯类似，具有较好的韧性，且透过率高。
单层锡原子在常温下导电率可以达到100％，可能成为一种超级导体材料。例如，单层锡的变体材料是通过对单层锡进行表面修饰或磁性掺杂形成。对单层锡进行表面修饰可以是对单层锡添加-F,-Cl,-Br,-I和–OH等功能基实现其改性。
单层锡的变体材料为对单层锡进行氟(F)原子的表面修饰，形成的锡氟化合物。当添加F原子到单层锡原子结构中时，单层锡在温度高达100℃时导电率能达到100％，且性质依然稳定。
在本发明至少一实施例中，如图2所示，第一辅助电极27为条状，显示器件包括多条第一辅助电极27。
通过多条第一辅助电极分别向第二电极提供电信号，可以减小第二电极的电压降。当然，辅助电极也可以是面电极，则由于辅助电极的传输电阻小于第二电极的传输电阻，也减小第二电极的电压降。
本发明至少一实施例提供了一种OLED显示器件的制作方法，如图3所示，所述方法包括：
步骤101、形成薄膜晶体管。
形成薄膜晶体管包括形成栅极、源极和漏极。当薄膜晶体管为底栅型薄膜晶体管，则先形成栅极，再在栅极的上面形成源极和漏极。当薄膜晶体管为顶栅型薄膜晶体管，则先形成源极和漏极，再在源极和漏极的上面形成栅极。
步骤102、形成第一电极。
第一电极与漏极电连接。例如，第一电极可以为阳极，其一般可以采用ITO形成。
步骤103、形成有机功能层和形成第二电极。
第一电极和第二电极分别为阳极和阴极。当第一电极为阳极，则第二电极为阴极，阴极一般可以采用金属银形成。
形成有机功能层可以是依次形成空穴传输功能层(HTL层)、空穴注入功能层(HIL层)、发光功能层(EML层)、电子传输功能层(ETL层)、电子注入功能层(EIL层)等，本发明实施例不作赘述。
步骤104、利用拓扑绝缘体形成与第二电极电连接的第一辅助电极。
所述第一辅助电极用于向所述第二电极提供电信号。
例如，如图4所示，上述步骤104包括：
步骤1041、对基底进行图案化刻蚀，形成对应第一辅助电极的图案。
例如，该基底可以是云母，还可以是SrTiO3(111)，以及通过分子束外延法可在其表面生长拓扑绝缘体薄膜的其他基底。本发明实施例中以所述基底为云母为例进行详细说明。
例如，对基底进行图案化刻蚀形成对应第一辅助电极的图案，可以是采用与第一辅助电极图案相同的掩膜板，在掩膜板的掩膜下对云母基底进行等离子体刻蚀，得到与第一辅助电极图案相同的图案化的云母基底。
步骤1042、在图案化的基底表面形成拓扑绝缘体的薄膜。
例如，在图案化的云母基底表面，通过分子束外延生长Bi2Se3薄膜。当然，还可以生长其他拓扑绝缘体薄膜，本发明实施例以拓扑绝缘体为Bi2Se3为例进行详细说明。
步骤1043、将基底去除，得到由拓扑绝缘体形成的第一辅助电极图案。
例如，将云母基底溶解掉，得到拓扑绝缘体形成的第一辅助电极图案。
步骤1044、将第一辅助电极图案贴附在对应的第一辅助电极区域使其与第二电极电连接。
例如，将第一辅助电极图案贴附在对应的第一辅助电极区域使其与第二电极电连接，例如可以在第一辅助电极的一侧表面形成黏着层，将所述第一辅助电极贴附在第一辅助电极区域使其与第二电极电连接。
当然，形成第一辅助电极的方法也不局限于上述步骤，本发明实施例仅以上述为例进行详细说明。
本发明至少一实施例提供了一种显示装置，如图5所示，包括阵列基板20和封装基板10，其中，所述阵列基板20和封装基板10形成有本发明至少一实施例提供的任一所述的OLED显示器件。
需要说明的是，阵列基板20和封装基板10之间一边还设置有填充层30。填充层30可用于缓解基板之间的压力。
在本发明至少一实施例中，如图5所示，薄膜晶体管22、第一电极(阳极23)、第二电极(阴极26)、有机功能层25以及第一辅助电极27形成在 阵列基板20上，且第一辅助电极27形成在第二电极26’(阴极)的上面，与第二电极26’(阴极)直接接触电连接。
需要说明的是，即可以是直接在第二电极的上面形成多条的第一辅助电极27，以便通过所述第一辅助电极向第二电极提供电信号，减小第二电极的电压降。图5所示的第一辅助电极为条状电极，当然也可以是平面电极。
本发明实施例中的“上”、“下”以制造薄膜或图案时的先后顺序为准，例如，在上的薄膜或图案是指相对在后形成的薄膜或图案，在下的薄膜或图案是指相对在先形成的薄膜或图案。
在本发明至少一实施例中，如图6所示，薄膜晶体管22、第一电极23’(阳极)、第二电极26’(阴极)以及有机功能层25形成在阵列基板20上，第一辅助电极27形成在封装基板10上。
如图6所示，封装基板10包括第二衬底11以及形成在第二衬底11上的彩色膜层13、黑矩阵层12、保护层14以及隔垫物15。第一辅助电极形成在封装基板10上，可以是如图6所示，形成在保护层14的上面。需要说明的是，一般封装基板上还形成有隔垫物，则当所述第一辅助电极为条状时，第一辅助电极与隔垫物位置错开，以降低封装基板的厚度。
如图7所示，隔垫物15形成在保护层14的上面，则当第一辅助电极27形成在保护层14的上面时，第一辅助电极27与隔垫物15位于同一层且位置错开。
当然，第一辅助电极27还可以是形成在保护层14的下面或直接形成在第二衬底11上，再通过过孔与第二电极26’(阴极)电连接，本发明实施例仅以图6、图7所示的为例进行详细说明。
图6所示的第一辅助电极为平面电极，当然也可以是条状电极。
例如，如图7所示，封装基板10上还形成有第二辅助电极28，第一辅助电极27为条状时，通过第二辅助电极28与第二电极26’(阴极)电连接。
例如，如图5、图7所示，封装基板10上形成有黑矩阵12，第一辅助电极27为条状时，第一辅助电极27位于黑矩阵12的对应位置处。
当然，由拓扑绝缘体形成的透明第一辅助电极也可以是位于黑矩阵之间的彩膜区域的对应位置处，本发明实施例仅以所述第一辅助电极优选位于黑矩阵对应位置处为例进行详细说明。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护范围，本发明的保护范围由所附的权利要求确定。
本申请要求于2014年8月5日递交的中国专利申请第201410381736.8号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (15)

  1. 一种OLED显示器件，包括：薄膜晶体管、第一电极、第二电极、位于所述第一电极和所述第二电极之间的有机功能层以及由拓扑绝缘体形成的第一辅助电极，
    其中，所述薄膜晶体管包括栅极、源极和漏极，所述第一电极与所述漏极电连接；
    所述第一辅助电极与所述第二电极电连接，向所述第二电极提供电信号。
  2. 根据权利要求1所述的显示器件，其中所述第一电极和所述第二电极分别为阳极和阴极。
  3. 根据权利要求1或2所述的显示器件，其中，所述第一辅助电极为拓扑绝缘体形成的二维纳米结构。
  4. 根据权利要求1或2所述的显示器件，其中，所述拓扑绝缘体包括HgTe、BixSb1-x、Sb2Te3、Bi2Te3、Bi2Se3、TlBiTe2、TlBiSe2、Ge1Bi4Te7、Ge2Bi2Te5、Ge1Bi2Te4、AmN、PuTe、单层锡以及单层锡变体材料中的至少一种。
  5. 根据权利要求4所述的显示器件，其中，单层锡的变体材料为通过对单层锡进行表面修饰或磁性掺杂形成。
  6. 根据权利要求4所述的显示器件，其中，单层锡的变体材料为对单层锡进行氟原子的表面修饰，形成的锡氟化合物。
  7. 根据权利要求1-6任一所述的显示器件，其中，所述第一辅助电极为条状，所述显示器件包括多条第一辅助电极。
  8. 一种OLED显示器件的制作方法，包括：
    形成薄膜晶体管，包括形成所述薄膜晶体管的栅极、源极和漏极；
    形成第一电极，所述第一电极与所述漏极电连接；
    形成有机功能层和第二电极；
    利用拓扑绝缘体形成与所述第二电极电连接的第一辅助电极，所述第一辅助电极用于向所述第二电极提供电信号。
  9. 根据权利要求8所述的制作方法，其中，利用拓扑绝缘体形成与所述第二电极电连接的第一辅助电极包括：
    对基底进行图案化刻蚀，形成对应第一辅助电极的图案；
    在所述图案化的基底表面形成拓扑绝缘体的薄膜；
    将所述基底去除，得到由拓扑绝缘体形成的第一辅助电极图案；
    将所述第一辅助电极图案贴附在对应的第一辅助电极区域使其与第二电极电连接。
  10. 根据权利要求8或9所述的制作方法，其中，其中所述第一电极和所述第二电极分别为阳极和阴极。
  11. 一种显示装置，包括阵列基板和封装基板，所述阵列基板和封装基板形成有如权利要求1-7任一项所述的OLED显示器件。
  12. 根据权利要求11所述的显示装置，其中，所述薄膜晶体管、第一电极、第二电极、有机功能层以及第一辅助电极形成在所述阵列基板上，且所述第一辅助电极形成在所述第二电极的上面，与所述第二电极直接接触电连接。
  13. 根据权利要求11所述的显示装置，其中，所述薄膜晶体管、第一电极、第二电极以及有机功能层形成在所述阵列基板上，所述第一辅助电极形成在封装基板上。
  14. 根据权利要求13所述的显示装置，其中，所述封装基板上还形成有第二辅助电极，所述第一辅助电极为条状时，通过所述第二辅助电极与所述第二电极电连接。
  15. 根据权利要求11-14任一项所述的显示装置，其中，所述封装基板上形成有黑矩阵，所述第一辅助电极为条状时，所述第一辅助电极位于所述黑矩阵的对应位置处。
PCT/CN2014/089550 2014-08-05 2014-10-27 Oled显示器件及其制作方法、显示装置 WO2016019637A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/768,956 US9818971B2 (en) 2014-08-05 2014-10-27 OLED display device with auxiliary electrode and preparation method thereof, display apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410381736.8A CN104157675A (zh) 2014-08-05 2014-08-05 一种oled显示器件及其制作方法、显示装置
CN201410381736.8 2014-08-05

Publications (1)

Publication Number Publication Date
WO2016019637A1 true WO2016019637A1 (zh) 2016-02-11

Family

ID=51883135

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2014/089550 WO2016019637A1 (zh) 2014-08-05 2014-10-27 Oled显示器件及其制作方法、显示装置

Country Status (3)

Country Link
US (1) US9818971B2 (zh)
CN (1) CN104157675A (zh)
WO (1) WO2016019637A1 (zh)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015058571A1 (zh) * 2013-10-25 2015-04-30 京东方科技集团股份有限公司 Oled显示装置及其制作方法
KR102290785B1 (ko) * 2014-11-18 2021-08-19 삼성디스플레이 주식회사 유기 발광 표시 장치
US10395615B2 (en) * 2014-12-25 2019-08-27 Shanghai Tianma Micro-electronics Co., Ltd. Display panel and method for manufacturing the same cross-references to related applications
CN108535907B (zh) * 2014-12-25 2021-07-20 上海天马微电子有限公司 一种显示面板、显示器及其制作方法
CN104821329A (zh) * 2015-05-04 2015-08-05 深圳市华星光电技术有限公司 Oled显示装置
CN104882463A (zh) * 2015-05-06 2015-09-02 深圳市华星光电技术有限公司 Oled背板结构
CN105159485B (zh) * 2015-06-18 2018-06-05 京东方科技集团股份有限公司 触控面板及其制备方法、显示装置
CN105244315B (zh) * 2015-10-08 2018-07-10 上海和辉光电有限公司 显示面板结构及制备方法
CN205594253U (zh) * 2016-02-02 2016-09-21 京东方科技集团股份有限公司 显示装置
CN105789479B (zh) 2016-04-22 2018-09-07 京东方科技集团股份有限公司 Oled及其制备方法、以及oled显示装置
CN106129102A (zh) * 2016-09-13 2016-11-16 京东方科技集团股份有限公司 一种oled封装基板及其制备方法、oled显示面板
CN206194793U (zh) * 2016-12-01 2017-05-24 京东方科技集团股份有限公司 一种顶发光型oled显示装置
CN106803547B (zh) * 2017-02-15 2018-08-14 深圳市华星光电技术有限公司 顶发射型oled显示器件的制作方法及结构
CN107331788B (zh) 2017-06-26 2019-01-25 京东方科技集团股份有限公司 Oled器件、oled显示装置及oled器件的制备方法
WO2019025910A1 (en) 2017-08-04 2019-02-07 Semiconductor Energy Laboratory Co., Ltd. DISPLAY PANEL, DISPLAY DEVICE, DISPLAY MODULE, AND ELECTRONIC DEVICE
CN107546335B (zh) * 2017-08-14 2019-07-02 深圳市华星光电技术有限公司 Oled面板及其制作方法
CN107579102B (zh) * 2017-08-31 2020-07-07 上海天马微电子有限公司 显示面板及显示装置
CN109427998B (zh) * 2017-09-01 2020-01-14 京东方科技集团股份有限公司 用于有机电致发光显示器件的盖板及其制作方法、有机电致发光显示器件以及显示设备
US10405465B2 (en) * 2017-11-16 2019-09-03 The Boeing Company Topological insulator thermal management systems
CN109037470A (zh) * 2018-07-16 2018-12-18 云谷（固安）科技有限公司 显示屏、显示装置
KR20200113079A (ko) 2019-03-21 2020-10-06 삼성디스플레이 주식회사 표시 장치
CN113366652A (zh) * 2019-07-12 2021-09-07 深圳市柔宇科技股份有限公司 显示面板及制备方法
CN110854290B (zh) 2019-10-29 2021-06-22 苏州华星光电技术有限公司 一种显示面板及其制备方法
CN111811701B (zh) * 2020-07-20 2021-10-29 中国科学院重庆绿色智能技术研究院 一种多级微结构栅薄膜晶体管柔性压力传感器及其制备方法
CN111816790B (zh) * 2020-07-24 2023-09-22 京东方科技集团股份有限公司 透明有机发光显示面板、制备方法和显示装置
CN112952016B (zh) * 2021-01-27 2022-09-23 合肥京东方卓印科技有限公司 一种显示面板、显示装置以及制作方法
US20230037057A1 (en) * 2021-07-30 2023-02-02 Sharp Display Technology Corporation Uv-patterned conductive polymer electrode for qled

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6452658B1 (en) * 1998-08-24 2002-09-17 Hyundai Display Technology Inc. Reflective LCD having high transmittance and method for manufacturing the same
CN102916030A (zh) * 2011-08-03 2013-02-06 尹根千 有机电致发光显示元件以及其制造方法
CN103413594A (zh) * 2013-08-12 2013-11-27 北京大学 拓扑绝缘体柔性透明导电材料及其制备方法与应用
CN103779384A (zh) * 2012-10-22 2014-05-07 三星显示有限公司 有机发光显示装置及其制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2888833B1 (fr) * 2005-07-22 2007-08-24 Commissariat Energie Atomique Procede de realisation d'etalons de bruit de fond diffus comportant des nano-structures sur une couche mince isolante
JP4977561B2 (ja) * 2007-09-05 2012-07-18 株式会社ジャパンディスプレイイースト 表示装置
KR101084171B1 (ko) * 2009-08-10 2011-11-17 삼성모바일디스플레이주식회사 유기 발광 디스플레이 장치 및 유기 발광 디스플레이 장치의 제조 방법
US10329139B2 (en) * 2010-06-08 2019-06-25 Northeastern University Interfacial convective assembly for high aspect ratio structures without surface treatment
US9024415B2 (en) 2010-12-07 2015-05-05 The Board Of Trustees Of The Leland Stanford Junior University Electrical and optical devices incorporating topological materials including topological insulators
EP2741295B1 (en) * 2012-12-04 2016-03-02 Imec Spin transfer torque magnetic memory device
CN105555705B (zh) * 2013-07-22 2018-10-16 光州科学技术院 硅纳米线阵列的制备方法
KR102069193B1 (ko) * 2013-07-22 2020-01-23 삼성디스플레이 주식회사 유기발광표시장치 및 그 제조 방법
KR102092924B1 (ko) * 2013-08-05 2020-03-25 삼성디스플레이 주식회사 유기 발광 표시 장치
US9463997B2 (en) * 2013-08-28 2016-10-11 Shin-Etsu Chemical Co., Ltd. Composite particle, method of producing same, resin composition containing the particle, reflector formed from the composition, and light-emitting semiconductor device using the reflector
JP6136890B2 (ja) * 2013-11-26 2017-05-31 ソニー株式会社 表示装置、表示装置の製造方法および電子機器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6452658B1 (en) * 1998-08-24 2002-09-17 Hyundai Display Technology Inc. Reflective LCD having high transmittance and method for manufacturing the same
CN102916030A (zh) * 2011-08-03 2013-02-06 尹根千 有机电致发光显示元件以及其制造方法
CN103779384A (zh) * 2012-10-22 2014-05-07 三星显示有限公司 有机发光显示装置及其制造方法
CN103413594A (zh) * 2013-08-12 2013-11-27 北京大学 拓扑绝缘体柔性透明导电材料及其制备方法与应用

Also Published As

Publication number Publication date
CN104157675A (zh) 2014-11-19
US9818971B2 (en) 2017-11-14
US20160276619A1 (en) 2016-09-22

Similar Documents

Publication Publication Date Title
WO2016019637A1 (zh) Oled显示器件及其制作方法、显示装置
WO2016019635A1 (zh) Oled显示器件及其制作方法、显示装置
CN106684251B (zh) 柔性垂直沟道有机薄膜晶体管及其制作方法
CN104900673B (zh) 显示装置及其制造方法
EP3528299B1 (en) Manufacturing method of a transparent oled display
WO2016176886A1 (zh) 柔性oled及其制作方法
CN103779381B (zh) 有机发光显示装置及其制造方法
US10164207B2 (en) Organic light-emitting device and method for manufacturing same
US9905797B2 (en) OLED display device and fabrication method thereof
US20160276617A1 (en) Opposed substrate of an oled array substrate and method for preparing the same, and display device
WO2016095330A1 (zh) Oled显示基板及其制造方法
CN104122495A (zh) 测试有机发光显示面板的方法、母基板测试装置和方法
CN107591480A (zh) 像素结构垂直沟道有机薄膜晶体管及其制作方法
JP2013249537A (ja) 酸化物半導体スパッタリング用ターゲット、これを用いた薄膜トランジスタの製造方法
KR20170028986A (ko) 산화물 반도체 tft 기판의 제작방법 및 구조
WO2016019665A1 (zh) 具有触摸功能的有机发光显示器件及其制作方法、显示装置
CN104157705B (zh) 一种阻隔膜层、具其的光电器件及光电器件的制作方法
TW201024836A (en) Display drivers
KR100805270B1 (ko) 유기투명전극을 적용한 플렉시블 유기 발광 소자, 이를이용한 디스플레이 패널 및 그 제조 방법
Noh et al. 17.1: Invited paper: Inverted oled
KR102082660B1 (ko) 산화물 박막 트랜지스터
Liu et al. 46.1: Invited Paper: Ink‐jet Printed 17‐inch AMOLED Display with Amorphous IGZO TFTs Backplane
JP2020077844A (ja) 低次元電子構造の物質から構成される電極を用いる有機トランジスタ素子と有機発光トランジスタ素子及びその製造方法
KR20160093132A (ko) 유기전계발광 소자 및 이를 구비하는 유기전계발광 표시장치
KR101302481B1 (ko) 산화물 반도체 타겟, 이를 통해 증착된 액티브층을 갖는 박막 트랜지스터 및 이를 구비하는 디스플레이 장치

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 14768956

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14899150

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 27/06/2017)

122 Ep: pct application non-entry in european phase

Ref document number: 14899150

Country of ref document: EP

Kind code of ref document: A1