WO2016017290A1 - Capteur de pression - Google Patents

Capteur de pression Download PDF

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Publication number
WO2016017290A1
WO2016017290A1 PCT/JP2015/066652 JP2015066652W WO2016017290A1 WO 2016017290 A1 WO2016017290 A1 WO 2016017290A1 JP 2015066652 W JP2015066652 W JP 2015066652W WO 2016017290 A1 WO2016017290 A1 WO 2016017290A1
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WO
WIPO (PCT)
Prior art keywords
sensor
diaphragm
sensor chip
joint
pressure sensor
Prior art date
Application number
PCT/JP2015/066652
Other languages
English (en)
Japanese (ja)
Inventor
風間　敦
太田　裕之
準二 小野塚
洋 小貫
美帆 飛田
瑞紀 芝田
稲波　久雄
Original Assignee
日立オートモティブシステムズ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立オートモティブシステムズ株式会社 filed Critical 日立オートモティブシステムズ株式会社
Publication of WO2016017290A1 publication Critical patent/WO2016017290A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Definitions

  • the present invention relates to a pressure sensor that detects the deformation of a diaphragm that receives pressure.
  • a pressure sensor having a structure in which a strain gauge is formed on a diaphragm is well known.
  • This pressure sensor detects the pressure by utilizing the fact that the resistance of the strain gauge changes due to the deformation of the diaphragm due to the pressure.
  • a bridge circuit is constituted by four strain gauges, and pressure is detected by obtaining a differential voltage output proportional to the pressure from the bridge circuit.
  • the bridge circuit is mainly used for temperature compensation. This is because if the four strain gauges have the same change, the output of the bridge circuit does not change even if the strain gauge has temperature characteristics.
  • a stainless steel diaphragm is used, and a semiconductor strain gauge is attached to the diaphragm or a semiconductor strain gauge is formed.
  • a pressure sensor with a chip attached is often used.
  • the configuration in which the sensor chip is attached has a great advantage compared to the configuration having the signal processing IC separately from the strain gauge. Since the signal processing circuit can be built in the sensor chip, the transmission path from the strain gauge to the processing circuit is short, and noise can be reduced. In addition, since the temperature sensor can be built in the vicinity of the strain gauge, the temperature of the strain gauge can be measured accurately and the accuracy of temperature compensation can be increased.
  • Patent Document 1 discloses that a sensor chip made of a single crystal semiconductor having a strain gauge formed thereon is joined on a circular metal diaphragm.
  • the sensor chip is larger than the diaphragm, and the sensor chip is joined so that the strain gauge on the sensor chip is disposed on the periphery of the diaphragm.
  • two of the four strain gauges are arranged in the circumferential direction and the other two are arranged in the radial direction, so that the stress generated in the strain gauge by applying pressure is respectively
  • the sensor sensitivity is obtained by compressive stress and tensile stress. Further, it is disclosed that the adverse effect of thermal stress caused by the difference in linear expansion coefficient between the sensor chip and the diaphragm can be eliminated as much as possible by making the shape of the sensor chip as close to a circle as possible.
  • Patent Document 2 also discloses a pressure sensor in which a semiconductor substrate having a strain gauge is attached to the surface of a metal diaphragm.
  • the semiconductor substrate has a structure in which a first semiconductor layer and a second semiconductor layer are joined via an insulating layer, a strain gauge is formed in the first semiconductor layer, and a recess reaching the insulating layer is formed in the second semiconductor layer.
  • the diaphragm enters the recess and is joined to the insulating layer on the bottom surface of the recess.
  • the diaphragm is joined to the sensor chip over the entire area.
  • Low-melting glass or metal solder is used for the bonding, but in order to bond the entire diaphragm area to the sensor chip, the bonding layer is sufficient to absorb the waviness of the bonding surface and to suppress the generation of voids. Need to be thick. When the thickness of the bonding layer is reduced with respect to the bonding area, the deformation of the diaphragm with respect to the pressure to be measured is hindered. Further, when the entire diaphragm is joined to the sensor chip, deformation of the entire diaphragm is hindered by the rigidity of the sensor chip.
  • the sensor chip is limited in thickness in consideration of prevention of warpage and cracking in the wafer state and handling during bonding. Even if the diaphragm is thinned to increase sensitivity, it is difficult to obtain high sensitivity due to the high rigidity of the sensor chip. By increasing the size of the sensor chip, the size of the diaphragm can also be increased, and the sensitivity can be increased even if the diaphragm is thick. However, increasing the sensor chip unnecessarily increases the cost.
  • Patent Document 2 discloses that the sensitivity is improved by partially thinning the sensor chip.
  • a bonding layer is disclosed in order to join the sensor chip having a recess and the diaphragm shaped to enter the recess without any gap. There is a concern that deformation of the diaphragm is hindered by the bonding layer.
  • the stress due to the difference in thermal expansion of the constituent materials becomes a problem.
  • the sensor chip is usually made of silicon, and the diaphragm is made of metal such as stainless steel. Since the low melting point glass or metal solder of the bonding layer and the sensor chip and the diaphragm have different linear expansion coefficients, thermal stress remains after bonding at a high temperature. If the bonding layer is thick, the thermal stress increases, and deformation due to stress relaxation of the bonding layer increases. Therefore, there is a concern that the characteristic drift due to long-term stress relaxation increases and accuracy deteriorates.
  • An object of the present invention is to improve the sensitivity by suppressing the deformation of the diaphragm by the rigidity of the bonding layer and the sensor chip in the pressure sensor having the structure in which the sensor chip is bonded to the diaphragm, and the stress generated in the bonded portion. It is to improve the accuracy by reducing the change of.
  • a pressure sensor of the present invention is a pressure sensor having a sensor casing having a diaphragm, a sensor chip provided on the sensor casing, and a strain gauge provided on the sensor chip.
  • the sensor chip is connected to the sensor housing via a thin joint, the area of the joint is smaller than the areas of the sensor chip and the diaphragm, and the strain gauge is a projection surface of the joint It is arranged inside.
  • FIG. 1A the center line along the X axis is the X center line 10
  • the center line along the Y axis is the Y center line 11, and FIG. Yes.
  • the pressure sensor 1 has a configuration in which a rectangular sensor chip 4 is joined via a joining portion 5 on a metal sensor housing 3 on which a diaphragm 2 is formed.
  • the outer shape of the diaphragm 2 is indicated by a dotted line.
  • the sensor chip 4 has a gauge region 6 at the center of the surface not joined to the diaphragm 2, and has four strain gauges 7 (first to fourth strain gauges 7 a to 7 d) in the gauge region 6.
  • the four strain gauges 7 are connected by a wiring (not shown) and constitute a Wheatstone bridge circuit shown in FIG.
  • the diaphragm 2 has a shape having a short side and a long side, and the short side direction is an X axis and the long side direction is a Y axis.
  • the gauge region 6 is disposed on the central portion of the diaphragm 2.
  • the first strain gauge 7 a and the second strain gauge 7 b are arranged so that the short direction (X-axis direction) of the diaphragm 2 is the current direction, and the third strain gauge 7 c and the fourth strain gauge 7 d are the longitudinal direction of the diaphragm 2. They are arranged so that (Y-axis direction) is the current direction.
  • the joint 5 is circular as shown by a dotted line in FIG. 1A and is disposed on the center of the diaphragm 2. In the planar configuration shown in FIG. 1A, the gauge region 6 is included in the joint portion 5, and the joint portion 5 is included in the sensor chip 4.
  • the stress of the strain gauge 7 changes due to the deformation of the diaphragm 2 with respect to the pressure applied to the surface opposite to the joint surface of the sensor chip 4 of the diaphragm 2.
  • an output proportional to the pressure is obtained as a differential output of the bridge circuit.
  • the sensor housing 3 including the diaphragm 2 is made of a metal such as stainless steel.
  • the sensor housing 3 has a cylindrical shape, the center portion is processed from one side, and the thin remaining portion is the diaphragm 2.
  • As the processing method cutting, electric discharge machining, press working, or the like can be used.
  • An R shape is formed at the end of the processed surface of the diaphragm 2 and has a function of relaxing stress concentration generated at the end when pressure is applied.
  • the sensor chip 4 is manufactured from a single crystal silicon substrate, and the strain gauge 7 is a p-type silicon piezoresistive gauge manufactured by impurity diffusion.
  • a silicon substrate having a crystal plane (100) is used so that the X-axis and the Y-axis coincide with ⁇ 110> of the silicon crystal axis. Therefore, the first to fourth strain gauges 7a to 7d are all piezoresistive gauges in the p-type silicon ⁇ 110> direction.
  • Metal solder such as Au / Sn is used for the bonding layer 5.
  • the Ni / Au film is formed on the bonding surface of the sensor chip 4 by sputtering, and the Au film is formed on the bonding area of the sensor chip 4 of the diaphragm 2 by plating. Positioning is performed with / Sn sandwiched, and heating is performed to melt Au / Sn to join.
  • the bonding layer 5 can also be a low melting point glass.
  • the pressure sensor according to the present invention is characterized in that the diaphragm 2 and the sensor chip 4 are partially joined by a joint 5 having a small area.
  • the joint 5 has a smaller area than the diaphragm 2 and a smaller area than the sensor chip 4.
  • the gauge region 6 is arranged at a position included in the projection plane in the z direction of the joint 5 so that the strain due to the deformation of the diaphragm 2 is transmitted to the strain gauge 7. In this configuration, since the area of the joint portion 5 can be reduced, even if the joint portion 5 is thin, the generation of voids and unjoined portions can be suppressed and the joining can be performed with high reliability.
  • the joint portion 5 Since the joint portion 5 is thin, the rigidity of the joint portion 5 is difficult to prevent the diaphragm 2 from being deformed, and the sensitivity of the pressure sensor can be increased. In addition, since the diaphragm 2 and the sensor chip 4 are only partially joined, the rigidity of the sensor chip 4 is unlikely to hinder the deformation of the diaphragm 2 and the sensitivity can be increased.
  • the joint portion 5 is thin, there is a feature that the change in sensor characteristics is suppressed and the accuracy is increased. Since the joint portion 5 has a linear expansion coefficient different from that of the sensor housing 3 and the sensor chip 4, thermal residual stress due to the joint is generated. If this stress is large, the sensor characteristics are likely to change due to a long-term stress change. . Since the joint 5 is thin, the stress can be reduced, and deformation due to stress relaxation can be reduced, so that long-term fluctuations in sensor characteristics can be reduced.
  • the joint 5 is thin, there is an effect of suppressing variations in sensor characteristics. If the joint portion 5 is thick, the warp of the sensor chip 4 tends to remain after joining, and the sensor characteristics also change due to the warp. If the joint portion 5 is thin, the sensor chip 4 is hardly warped, and variations in sensor characteristics can be suppressed.
  • the joint portion 5 is thin, the amount of material used for the joint portion 5 can be reduced.
  • the pressure sensor of the present invention is characterized in that the sensitivity can be increased by making the diaphragm 2 sufficiently large with respect to the joint 5.
  • the size of the diaphragm cannot be increased due to the size of the sensor chip, and it is necessary to make the diaphragm thinner in order to increase sensitivity.
  • the size of the diaphragm 2 can be increased regardless of the size of the sensor chip 4, so that the sensitivity can be increased without reducing the thickness of the diaphragm 2.
  • the pressure sensor of the present invention is characterized in that the joint portion 5 is arranged at a position where the strain generated in the diaphragm 2 with respect to the pressure is different between the X-axis direction and the Y-axis direction.
  • the joint 5 is arranged at the center of the diaphragm 2 having a long side and a short side. The distortion at the center of the diaphragm 2 with respect to the pressure is greater in the short X-axis direction than in the long Y-axis direction.
  • the gauge region 6 is arranged at a position where a strain difference between the X axis and the Y axis is generated, and the four strain gauges 7 are concentratedly arranged in the gauge region 6. Even if the area is small, all four strain gauges 7 can be appropriately given a strain change due to pressure.
  • the output change due to the temperature change is reduced, and the long-term sensor characteristic change is suppressed to increase the accuracy. effective. Since the diaphragm 2 and the sensor chip 4 have different linear expansion coefficients, thermal distortion occurs due to temperature changes. When the thermal strain generated in the gauge region 6 differs between the X axis and the Y axis, the sensor output changes, that is, it has temperature characteristics. If the joint 5 has an isotropic shape with respect to the X-axis and the Y-axis, the thermal strain generated in the sensor chip 4 is also nearly isotropic, so that the temperature characteristics can be reduced.
  • the bonding portion 5 has an isotropic shape, the change in strain of the sensor chip 4 due to the relaxation is close to isotropic. And accuracy can be increased.
  • the shape of the joint is not limited to a circle, but may be a square or a shape with R added to the corner of the square.
  • peripheral circuits such as an output amplifier, a current source, an A / D conversion, an output correction circuit, a memory for storing correction values, a temperature sensor, and the like can be built in, in addition to a bridge circuit.
  • amplification of the output signal, temperature correction, zero point correction, etc. can be performed, and the accuracy of the output signal can be increased.
  • the temperature correction since the strain gauge 7 and the temperature sensor can be formed on the same sensor chip 4, the temperature of the strain gauge 7 can be accurately measured, and the temperature correction can be performed with high accuracy.
  • the material since the diaphragm 2 and the sensor housing 3 that receive pressure are made of stainless steel, the material has a high yield strength, and it is easy to construct a sensor with a high pressure measurement range. It can also be used when the liquid or gas to be measured is highly corrosive.
  • the material of the stainless steel can be selected by selecting a precipitation hardening type stainless steel such as SUS630 when importance is attached to the proof stress and selecting a stainless steel having high corrosion resistance such as SUS316 when importance is attached to the corrosion resistance. Further, the material is not limited to stainless steel, and various steel types can be selected in consideration of proof stress, corrosion resistance, difference in linear expansion coefficient from silicon, and the like.
  • the material of the bonding layer 5 and the bonding process are not limited to the materials and processes described above.
  • the metal solder for example, Au / Ge solder or Au / Si solder can be used to further reduce the creep deformation of the bonding layer 5.
  • the joining process there is a method in which metal solder is directly formed on the rear surface of the diaphragm or sensor chip by plating or the like in addition to the above method using the metal solder pellets.
  • a second embodiment of the present invention will be described with reference to FIG. The description of the same configuration as in the first embodiment is omitted.
  • 3 (a) and 3 (b) show a plan view and a cross-sectional view of a second embodiment of the pressure sensor 1 of the present invention.
  • 3A the center line along the X axis is the X center line 10
  • the center line along the Y axis is the Y center line 11
  • FIG. 3B shows a cross-sectional view along the X center line 10. Yes.
  • the surface of the sensor housing 2 has a convex portion 12 having substantially the same shape as the joint portion 5, and the convex portion 12 is joined to the sensor chip 2 via the joint portion 5.
  • the convex part 12 By providing the convex part 12, there exists an effect which becomes easy to control the shape of the junction part 5 to the shape of the convex part 12.
  • FIG. The case where metal solder is used for the joint portion 5 will be described.
  • the metal solder uses a thin pellet, or is thinly formed in advance on the surface of the sensor chip 4 or the surface of the sensor housing 3, and is heated and melted. Join.
  • the gap between the sensor housing 3 and the sensor chip 4 is increased around the convex portion 12, so that the metal solder does not wet and spread.
  • the joint portion 5 is formed in accordance with the shape of the convex portion 12.
  • the joint portion 5 By making the convex portion 12 isotropic with respect to the X axis and the Y axis, the joint portion 5 can also have the same shape.
  • a third embodiment of the present invention will be described with reference to FIG. The description of the same configuration as in the first embodiment is omitted.
  • FIG. 4 (a) and 4 (b) show a plan view and a sectional view of a third embodiment of the pressure sensor 1 of the present invention.
  • the center line along the X axis is the X center line 10
  • the center line along the Y axis is the Y center line 11
  • FIG. 4B shows a cross-sectional view along the X center line 10. Yes.
  • the thin part 13 is formed on the sensor chip 4 in the region including the gauge region 6.
  • a thick portion 14 is formed so as to surround the thin portion 13.
  • the thick portion 14 has a shape that can include the convex portion 12, and the thin portion 13 of the sensor chip 2 and the convex portion 12 on the sensor housing 3 are joined via the joint portion 5.
  • the sensor chip 4 has a recess or groove formed on the back side of the surface on which the strain gauge 7 is formed in the region including the gauge region 6, and the bottom of the recess or groove of the sensor chip 4 and the protrusion 12. Are joined via the joint 5.
  • the thickness of the portion of the sensor chip 4 that is joined to the sensor housing 3 can be reduced, so that the deformation of the diaphragm 2 is less likely to be hindered by the rigidity of the sensor chip 4, thereby further improving sensitivity.
  • the sensor chip 4 can also be made sufficiently thin compared to the thickness of the diaphragm 2, so that thermal deformation due to temperature change causes the sensor chip 4 and the joint 5 to follow the deformation of the diaphragm 2. It becomes a shape. As a result, the distortion generated in the sensor chip 4 due to the temperature change becomes nearly isotropic, and the temperature characteristics can be reduced. In addition, the change in sensor characteristics due to the relaxation of the thermal residual stress at the time of joining becomes nearly isotropic, and the accuracy is improved.
  • the sensor chip 4 is thin. However, if the sensor chip 4 is made thin as a whole, warping and cracking in the wafer state and handling at the time of bonding become difficult. There is. By leaving the thick portion 14 around the periphery as in this configuration, the sensor chip having the thickness of the thick portion 14 can be handled to the same extent.
  • the depth of the concave portion formed in the thin-walled portion 13, that is, the difference in thickness between the thick-walled portion 14 and the thin-walled portion 13 is the same as the sum of the thicknesses of the convex portion 12 and the joint portion 5, but is desirably small.
  • the thickness of the bonding layer 5 can be determined to be constant. it can.
  • the bonding layer 5 is thin, the change in the thickness of the bonding portion 5 due to the pressing load of the sensor chip 4 is not large, so even if each thickness is determined so that the thick portion 14 does not contact the sensor housing 3, It can be manufactured without increasing variations in sensor characteristics.
  • a fourth embodiment of the present invention will be described with reference to FIG. The description of the same configuration as in the first embodiment is omitted.
  • FIG. 5 (a) and 5 (b) show a plan view and a cross-sectional view of a third embodiment of the pressure sensor 1 of the present invention.
  • 5A the center line along the X axis is the X center line 10
  • the center line along the Y axis is the Y center line 11
  • FIG. 5B is a cross-sectional view along the X center line 10. Yes.
  • the convex part 12 is configured by forming a groove 15 in the sensor housing 3 so as to surround the convex part 12. Further, the outer peripheral side of the groove 15 is formed in a shape that can contain the sensor chip 4. By forming the outer peripheral side wall of the groove 15 slightly larger along the outer shape of the sensor chip 4, the sensor chip 4 can be used for positioning when the sensor chip 4 is joined. By doing so, it is not necessary to separately prepare a positioning jig when the sensor chip 4 is joined, and the sensor chip 4 can be easily and accurately positioned.
  • the outer shape of the groove 15 is not limited to the shape along the entire outer periphery of the sensor chip 4, and only the portion necessary for positioning needs to be close to the sensor chip 4.
  • a fifth embodiment of the present invention will be described with reference to FIG. The description of the same configuration as in the first embodiment is omitted.
  • FIG. 6 shows a sectional view of a fifth embodiment of the pressure sensor of the present invention.
  • the present embodiment shows a configuration example of a pressure sensor assembly 21 in which the pressure sensors described in the first to fourth embodiments are assembled in a product form.
  • the sensor housing 3 has a cylindrical portion 22 whose outer peripheral portion extends downward in a cylindrical shape, and a flange portion 23 and a screw portion 24 are installed on the outer surface. It is integrally formed in the shape.
  • the threaded portion 24 is a male thread, and a female threaded joint (not shown) is prepared and attached to the pipe to be measured.
  • a pressure introduction port 25 is formed inside the cylindrical portion 22, and a liquid or gas to be measured is introduced to the surface of the diaphragm 2 through the pressure introduction port 25.
  • a wiring board 26 is disposed on the upper surface of the sensor housing 3 so as to be adjacent to the sensor chip 4.
  • the wiring board 26 is bonded and held on the upper surface of the sensor housing 3 by an adhesive 27.
  • the sensor chip 4 and the electrode pads of the wiring board 26 are electrically connected by wires 28.
  • a cylindrical cover 29 is connected to the flange portion 23 of the sensor housing 3 to protect the surface of the sensor chip 4 and its peripheral portion.
  • a plurality of external electrode pins 30 are provided at the upper end of the cover 29 so as to penetrate the cover 29.
  • the external electrode pins 30 and the wiring board 26 are electrically connected via a flexible wiring board 31.
  • the sensor chip 4 transmits a signal to the outside via the wire 28, the wiring board 26, the flexible wiring board 31, and the external electrode pin 30.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

L'invention concerne un capteur de pression avec une haute sensibilité, peu de variation de caractéristiques, et une bonne précision et ayant une configuration dans laquelle une puce de capteur est associée à un boîtier de capteur comportant une membrane. Le capteur de pression comprend : le boîtier de capteur avec la membrane ; la puce de capteur située sur le boîtier de capteur ; et une jauge de contrainte située sur la puce de capteur. La puce de capteur est reliée au boîtier de capteur par une section de jonction fine ; l'aire de la section de jonction est inférieure à l'aire de la puce de capteur et de la membrane ; et la jauge de contrainte est agencée à l'intérieur du plan de projection de la section de jonction.
PCT/JP2015/066652 2014-07-31 2015-06-10 Capteur de pression WO2016017290A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014155683A JP6248009B2 (ja) 2014-07-31 2014-07-31 圧力センサ
JP2014-155683 2014-07-31

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Publication Number Publication Date
WO2016017290A1 true WO2016017290A1 (fr) 2016-02-04

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WO (1) WO2016017290A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018038068A1 (fr) * 2016-08-23 2018-03-01 日本特殊陶業株式会社 Capteur de contrainte

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018036118A (ja) * 2016-08-31 2018-03-08 日立オートモティブシステムズ株式会社 電動ブレーキ用推力センサ

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000508425A (ja) * 1996-04-13 2000-07-04 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 圧力センサ
WO2002061383A1 (fr) * 2001-01-31 2002-08-08 Silicon Valley Sensors, Inc. Structure de detection de contrainte a puce triangulaire et angle, arete sur une membrane
JP2003302298A (ja) * 2002-04-10 2003-10-24 Denso Corp 力学量検出装置
JP2008064526A (ja) * 2006-09-06 2008-03-21 Denso Corp 圧力センサおよびその製造方法
JP2013537967A (ja) * 2010-09-01 2013-10-07 キストラー ホールディング アクチエンゲゼルシャフト ピエゾ抵抗センサ・チップ素子を有する圧力センサ
WO2014080759A1 (fr) * 2012-11-26 2014-05-30 日立オートモティブシステムズ株式会社 Capteur de pression

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000508425A (ja) * 1996-04-13 2000-07-04 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 圧力センサ
WO2002061383A1 (fr) * 2001-01-31 2002-08-08 Silicon Valley Sensors, Inc. Structure de detection de contrainte a puce triangulaire et angle, arete sur une membrane
JP2003302298A (ja) * 2002-04-10 2003-10-24 Denso Corp 力学量検出装置
JP2008064526A (ja) * 2006-09-06 2008-03-21 Denso Corp 圧力センサおよびその製造方法
JP2013537967A (ja) * 2010-09-01 2013-10-07 キストラー ホールディング アクチエンゲゼルシャフト ピエゾ抵抗センサ・チップ素子を有する圧力センサ
WO2014080759A1 (fr) * 2012-11-26 2014-05-30 日立オートモティブシステムズ株式会社 Capteur de pression

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018038068A1 (fr) * 2016-08-23 2018-03-01 日本特殊陶業株式会社 Capteur de contrainte
JPWO2018038068A1 (ja) * 2016-08-23 2019-06-20 日本特殊陶業株式会社 歪みセンサ

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